Semiconductor device

Abstract

Provided is a semiconductor device capable of improving characteristics. According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, and first and second insulating members. The second electrode includes first and second electrode portions. The semiconductor member includes a first semiconductor region. The first semiconductor region includes first to fourth partial regions. The first electrode portion is in contact with the fourth partial region. The first insulating member includes first and second insulating regions. The first insulating region is between the third electrode and the fourth partial region. The second insulating region is located between the first partial region and the third electrode. The second insulating member includes a first insulating portion. The first insulating portion is located between the second partial region and the first electrode portion.

Description

[0001] This application is based on Japanese Patent Application No. 2024-096174 (Filing Date: June 13, 2024) and claims priority thereto. This application incorporates the entire contents of the above application by reference. TECHNICAL FIELD

[0002] Embodiments of the present application relate to a semiconductor device. BACKGROUND

[0003] For a semiconductor device, it is desirable to improve characteristics. SUMMARY

[0004] Embodiments of the present application provide a semiconductor device capable of improving characteristics.

[0005] According to an embodiment of the present application, a semiconductor device includes a first electrode, a second electrode, a third electrode, a semiconductor member, a first insulating member, and a second insulating member. A first direction is from the first electrode to the second electrode. The second electrode includes a first electrode portion and a second electrode portion connected to the first electrode portion. The semiconductor member includes a first semiconductor region. The first semiconductor region includes a first partial region, a second partial region, a third partial region, and a fourth partial region. A second direction from the first partial region to the second partial region intersects the first direction. The third partial region is between the first partial region and the second partial region in the second direction. The first partial region is between the first electrode and the third electrode in the first direction. The second partial region is between the first electrode and the first electrode portion in the first direction. The fourth partial region is between the third partial region and the second electrode portion in the first direction. The fourth partial region is between the third electrode and the first electrode portion in the second direction. The first electrode portion is in contact with the fourth partial region. The first insulating member includes a first insulating region and a second insulating region. The first insulating region is between the third electrode and the fourth partial region in the second direction. The second insulating region is between the first partial region and the third electrode in the first direction. The second insulating member includes a first insulating portion. The first insulating portion is between the second partial region and the first electrode portion in the first direction.

[0006] According to the semiconductor device of the above-described structure, a semiconductor device capable of improving characteristics can be provided. BRIEF DESCRIPTION OF DRAWINGS

[0007] Figure 1 FIG. 1 is a schematic cross-sectional view of a semiconductor device according to a first embodiment.

[0008] Figure 2 A schematic cross-sectional view of a semiconductor device of Embodiment 1.

[0009] Figure 3 A schematic cross-sectional view of a semiconductor device of Embodiment 1.

[0010] Figure 4 A schematic cross-sectional view of a semiconductor device of Embodiment 1.

[0011] Figure 5 A schematic cross-sectional view of a semiconductor device of Embodiment 1.

[0012] Figure 6 A schematic cross-sectional view of a semiconductor device of Embodiment 1.

[0013] Figure 7 A schematic cross-sectional view of a semiconductor device of Embodiment 1.

[0014] Figure 8 A schematic perspective view of a semiconductor device of Embodiment 2.

[0015] Reference Signs

[0016] 10M: semiconductor member; 11, 12: first and second semiconductor regions; 11L: first semiconductor layer; 11a to 11e: first to fifth partial regions; 41, 42: first and second insulating members; 41a to 41d: first to fourth insulating regions; 42a to 42c: first to third insulating portions; 51 to 53: first to third electrodes; 52F, 52G: first and second surfaces; 52a to 52c: first to third electrode portions; 61, 62: first and second conductive members; 61L: connecting member; 61a, 62b: first and second ends; 110, 110a, 110b, 111 to 114, 120: semiconductor device; D1 to D3: first to third directions; d41b: second insulating region distance; d52a: first electrode portion distance; d53: third electrode distance; d61a: upper end distance; p1 to p4: first to fourth portions; t1, t2: first and second thicknesses. DETAILED DESCRIPTION

[0017] Hereinafter, each embodiment of the present application will be described with reference to the drawings.

[0018] The drawings are schematic or conceptual, and the relationship between the thickness and width of each portion, the ratio of the size between portions, and the like, are not necessarily the same as that of the actual one. Even in the case where the same portion is represented, the dimensions and ratios of each other are sometimes represented differently depending on the drawing.

[0019] In the present application specification and drawings, elements same as those already described in the preceding drawings are given the same reference numerals and detailed description is omitted as appropriate.

[0020] (First Embodiment)

[0021] Figure 1 A schematic cross-sectional view of a semiconductor device of the first embodiment is shown.

[0022] As shown in Figure 1 , the semiconductor device 110 of the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a semiconductor member 10M, a first insulating member 41, and a second insulating member 42. The semiconductor member 10M includes a first semiconductor region 11.

[0023] A first direction D1 is along a direction from the first electrode 51 to the second electrode 52. The first direction D1 is set as a Z-axis direction. One direction perpendicular to the Z-axis direction is set as an X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is set as a Y-axis direction.

[0024] The second electrode 52 includes a first electrode portion 52a and a second electrode portion 52b. The second electrode portion 52b is connected to the first electrode portion 52a. The first electrode portion 52a extends in the first direction D1 and a second direction D2. In the first direction D1, the first electrode portion 52a is located between the first electrode 51 and the second electrode portion 52b.

[0025] The first semiconductor region 11 is provided between the first electrode 51 and the second electrode 52, for example, in the first direction D1. The first semiconductor region 11 is substantially a layer along an X-Y plane.

[0026] The first semiconductor region 11 includes a first partial region 11a, a second partial region 11b, a third partial region 11c, and a fourth partial region 11d. A second direction D2 from the first partial region 11a to the second partial region 11b intersects the first direction D1. The second direction D2 can be the X-axis direction, for example.

[0027] The third partial region 11c is between the first partial region 11a and the second partial region 11b in the second direction D2. The first partial region 11a is between the first electrode 51 and the third electrode 53 in the first direction D1. The second partial region 11b is between the first electrode 51 and the first electrode portion 52a in the first direction D1. For example, in the first direction D1, a portion overlapping the third electrode 53 corresponds to the first partial region 11a. For example, in the first direction D1, a portion overlapping the first electrode portion 52a corresponds to the second partial region 11b.

[0028] The fourth partial region 11d is between the third partial region 11c and the second electrode portion 52b in the first direction D1. The fourth partial region 11d is between the third electrode 53 and the first electrode portion 52a in the second direction D2. The fourth partial region 11d is between the first insulating member 41 and the first electrode portion 52a in the second direction D2. The first electrode portion 52a is in contact with the fourth partial region 11d. For example, the fourth partial region 11d does not overlap the first electrode portion 52a in the first direction D1.

[0029] In the first partial region 11a, the second partial region 11b, the third partial region 11c, and the fourth partial region 11d, the boundaries to each other can or can not be clear.

[0030] In the first semiconductor region 11, the first partial region 11a, the second partial region 11b, the third partial region 11c, and the fourth partial region 11d can be n-type (first conductive type). These partial regions can also be p-type (second conductive type). In the following description, these partial regions are assumed to be n-type (first conductive type).

[0031] The first insulating member 41 includes a first insulating region 41a and a second insulating region 41b. The first insulating region 41a is between the third electrode 53 and the fourth partial region 11d in the second direction D2. The first insulating region 41a is in contact with the third electrode 53 and the fourth partial region 11d, for example. The fourth partial region 11d is between the first insulating region 41a and the first electrode portion 52a in the second direction D2. The second insulating region 41b is between the first partial region 11a and the third electrode 53 in the first direction D1. The second insulating region 41b can be in contact with the first partial region 11a and the third electrode 53, for example. The first insulating member 41 electrically insulates the third electrode 53 from the semiconductor member 10M (first semiconductor region 11), for example.

[0032] The second insulating member 42 includes a first insulating portion 42a. The first insulating portion 42a is between the second partial region 11b and the first electrode portion 52a in the first direction D1.

[0033] For example, a current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 can be a potential with the potential of the second electrode 52 as a reference, for example. The first electrode 51 functions as a drain electrode, for example. The second electrode 52 functions as a source electrode, for example. The third electrode 53 functions as a gate electrode, for example. The semiconductor device 110 is a transistor, for example.

[0034] For example, the current flowing through the fourth partial region 11d is controlled by the potential of the third electrode 53. The fourth partial region 11d is at least a part of the carrier region. For example, the first electrode portion 52a and the fourth partial region 11d form a Schottky contact.

[0035] In the semiconductor device 110, the region in which the current flows can not include the p-type region and the n-type region. Fast recovery can be obtained. For example, since a short gate length can be obtained, the loss can be suppressed.

[0036] In the embodiment, in the first direction D1, the first insulating portion 42a is provided between the second partial region 11b and the first electrode portion 52a. Thus, the lower surface (first surface 52F, refer to FIG. 6) of the first electrode portion 52a is not in contact with the first semiconductor region 11. On the other hand, the side surface (second surface 52G, refer to FIG. 6) of the first electrode portion 52a is in Schottky contact with the fourth partial region 11d. It is known that, by such a structure, for example, the leakage current can be suppressed. Figure 1 Figure 1

[0037] For example, in the reference example, the lower surface of the first electrode portion 52a forming the Schottky contact is in contact with the first semiconductor region 11. It is known that, in such a reference example, the leakage current easily becomes large. It is known that the leakage current is large in a region including the lower surface of the first electrode portion 52a. Such generation of the leakage current is particularly significant in a case where the work function of the first electrode portion 52a is low in relation to the height of the potential barrier.

[0038] In the embodiment, by providing the first insulating portion 42a, the lower surface of the first electrode portion 52a is not in contact with the first semiconductor region 11. Thus, for example, even in a case where the work function is small, the leakage current can be effectively suppressed. According to the embodiment, a semiconductor device capable of improving characteristics can be provided.

[0039] The height of the potential barrier depends on the work function of the material, the surface morphology of the first semiconductor region 11, the crystalline properties of the first electrode portion 52a, and the film quality of the first electrode portion 52a, and the like. These properties sometimes vary depending on the deviation of the manufacturing conditions. These properties sometimes also vary with time. In the embodiment, by providing the first insulating portion 42a, the leakage current caused by the variation of these properties can be stably and effectively suppressed.

[0040] For example, in a case where the work functions are the same, the leakage current in the embodiment can be made to be about 1 / 50 or less of the leakage current of the reference example.

[0041] As Figure 1 ​​As shown, the first electrode portion 52a includes a first surface 52F and a second surface 52G. The first surface 52F and the second surface 52G intersect. The first surface 52F is opposite to the first electrode 51. The first surface 52F corresponds to the lower surface. The first surface 52F is not in contact with the first semiconductor region 11. The second surface 52G is in contact with the fourth portion region 11d. The second surface 52G is, for example, a side surface.

[0042] In this embodiment, the width of the first surface 52F of the first electrode portion 52a along the second direction D2 can be less than the maximum value of the width of the first electrode portion 52a along the second direction D2. For example, the width of the upper end of the first electrode portion 52a along the second direction D2 can be greater than the width of the first surface 52F along the second direction D2. The upper end of the first electrode portion 52a is the end on the side of the second electrode portion 52b in the first direction D1.

[0043] like Figure 1 As shown, the first insulating member 41 may further include a third insulating region 41c. The third insulating region 41c is located between at least a portion of the third electrode 53 and the second electrode portion 52b in the first direction D1. The third insulating region 41c is, for example, in contact with the third electrode 53, a portion of the second electrode portion 52b, and a fourth portion region 11d. The fourth portion region 11d is located between the first insulating region 41a and the first electrode portion 52a in the second direction D2. The length of the third insulating region 41c in the first direction D1 may, for example, be longer than the length of the third electrode 53 in the first direction D1.

[0044] like Figure 1 As shown, the semiconductor device 110 may further include a first semiconductor layer 11L. The first semiconductor layer 11L is disposed between the first electrode 51 and the first semiconductor region 11. For example, the impurity concentration in the first semiconductor layer 11L is higher than the impurity concentration in the first semiconductor region 11. The first semiconductor layer 11L may be connected to the first electrode 51. By providing the first semiconductor layer 11L, for example, a low on-resistance can be obtained. In the case where the semiconductor device 110 does not include the first semiconductor layer 11L, the first partial region 11a, the second partial region 11b, and the third partial region 11c may be connected to the first electrode 51.

[0045] like Figure 1 As shown, the semiconductor device 110 may further include a first conductive member 61. The first conductive member 61 is located between the second portion region 11b and the first electrode portion 52a in the first direction D1. At least a portion of the first insulating portion 42a is located between the first conductive member 61 and the first electrode portion 52a.

[0046] The first semiconductor region 11 may also include a fifth portion region 11e. The fifth portion region 11e is located between the first portion region 11a and the second insulating region 41b in the first direction D1. The fifth portion region 11e may be connected to the second insulating region 41b. The second insulating member 42 may also include a second insulating portion 42b. The second insulating portion 42b is located between the fifth portion region 11e and the first conductive member 61 in the second direction D2.

[0047] The second insulating member 42 may, for example, also include a third insulating portion 42c. The third insulating portion 42c is located between the second portion region 11b and the first conductive member 61 in the first direction D1. The second insulating member 42 may be disposed around the first conductive member 61. The second insulating member 42, for example, electrically insulates the first conductive member 61 from the semiconductor member 10M (the first semiconductor region 11).

[0048] The first conductive member 61 can function as, for example, a field plate. For example, it can suppress electric field concentration, making stable operation easily achievable. For example, the first conductive member 61 can be electrically connected to the second electrode 52. This electrical connection can be achieved, for example, using a connecting member 61L. The first conductive member 61 can also be in an electrically floating state.

[0049] like Figure 1 As shown, the first conductive member 61 includes a first end 61a and a second end 61b. The first end 61a is located between the second end 61b and the first insulating portion 42a in the first direction D1. The first end 61a is, for example, the upper end. The second end 61b is the lower end. The distance between the first electrode 51 and the first end 61a along the first direction D1 is defined as the upper end distance d61a. The distance between the first electrode 51 and the third electrode 53 along the first direction D1 is defined as the third electrode distance d53. For example, the upper end distance d61a can be shorter than the third electrode distance d53. For example, stable operation is easily obtained.

[0050] like Figure 1 As shown, the distance between the first electrode 51 and the first electrode portion 52a along the first direction D1 is defined as the first electrode portion distance d52a. In this example, the first electrode portion distance d52a is longer than the third electrode distance d53 (the distance between the first electrode 51 and the third electrode 53 along the first direction D1). As will be explained below, the relationship between these distances can be varied.

[0051] Figure 2 A schematic cross-sectional view of a semiconductor device according to the first embodiment is shown.

[0052] like Figure 2As shown in the semiconductor device 110a of the embodiment, the first electrode portion distance d52a is shorter than the third electrode distance d53. The structure of the semiconductor device 110a other than this can be the same as that of the semiconductor device 110.

[0053] As shown in the semiconductor device 110a of the embodiment, the first electrode portion distance d52a is shorter than the third electrode distance d53. The structure of the semiconductor device 110a other than this can be the same as that of the semiconductor device 110. Figure 2 As shown in the semiconductor device 110a of the embodiment, the first electrode portion distance d52a is shorter than the third electrode distance d53. The structure of the semiconductor device 110a other than this can be the same as that of the semiconductor device 110.

[0054] Figure 3 A schematic cross-sectional view of the semiconductor device of the first embodiment is shown.

[0055] As shown in the semiconductor device 110a of the embodiment, the first electrode portion distance d52a is shorter than the third electrode distance d53. The structure of the semiconductor device 110a other than this can be the same as that of the semiconductor device 110. Figure 3 As shown in the semiconductor device 110a of the embodiment, the first electrode portion distance d52a is shorter than the third electrode distance d53. The structure of the semiconductor device 110a other than this can be the same as that of the semiconductor device 110.

[0056] Leakage current can also be suppressed in the semiconductor device 110a and the semiconductor device 110b. The relationship of the first electrode portion distance d52a and other distances described with respect to the semiconductor device 110a and the semiconductor device 110b can also be applied to various semiconductor devices to be described below.

[0057] Figure 4 A schematic cross-sectional view of the semiconductor device of the first embodiment is shown.

[0058] As shown in the semiconductor device 110a of the embodiment, the first electrode portion distance d52a is shorter than the third electrode distance d53. The structure of the semiconductor device 110a other than this can be the same as that of the semiconductor device 110. Figure 4 As shown in the semiconductor device 110a of the embodiment, the first electrode portion distance d52a is shorter than the third electrode distance d53. The structure of the semiconductor device 110a other than this can be the same as that of the semiconductor device 110.

[0059] As shown in the semiconductor device 110a of the embodiment, the first electrode portion distance d52a is shorter than the third electrode distance d53. The structure of the semiconductor device 110a other than this can be the same as that of the semiconductor device 110. Figure 4 As shown in the semiconductor device 110a of the embodiment, the first electrode portion distance d52a is shorter than the third electrode distance d53. The structure of the semiconductor device 110a other than this can be the same as that of the semiconductor device 110.

[0060] In the embodiment, the ratio of the second thickness t2 to the first thickness t1 (t2 / t1) can be, for example, 1.1 or more. Loss can be effectively suppressed. The ratio (t2 / t1) can be, for example, 10 or less.

[0061] Figure 5 FIG. 1 is a schematic cross-sectional view of a semiconductor device according to Embodiment 1.

[0062] As shown in FIG. 1, a semiconductor device 111 according to Embodiment 1 includes a semiconductor member 10M and a gate electrode 30M. The semiconductor member 10M includes a first semiconductor region 11 and a second semiconductor region 12. Figure 5 As shown in FIG. 1, a semiconductor device 111 according to Embodiment 1 includes a semiconductor member 10M and a gate electrode 30M. The semiconductor member 10M includes a first semiconductor region 11 and a second semiconductor region 12.

[0063] In the semiconductor device 112, the semiconductor member 10M further includes the second semiconductor region 12. The second semiconductor region 12 is between the first partial region 11a and the second insulating region 41b in the first direction Dl. In this example, the second semiconductor region 12 is between the fifth partial region 11e and the second insulating region 41b in the first direction Dl.

[0064] In one example, the first semiconductor region 11 is one of the first conductivity type and the second conductivity type (e.g., n-type), and the second semiconductor region 12 is the other of the first conductivity type and the second conductivity type (e.g., p-type). By providing such a second semiconductor region 12, for example, it is possible to reduce a loss caused by a capacitance between a gate bottom and a drain.

[0065] In Embodiment 1, the first semiconductor region 11 and the second semiconductor region 12 can satisfy a first condition or a second condition. Under the first condition, the first semiconductor region 11 is one of the first conductivity type and the second conductivity type. Under the first condition, the second semiconductor region 12 is the other of the first conductivity type and the second conductivity type.

[0066] Under the second condition, the first semiconductor region 11 and the second semiconductor region 12 are of the first conductivity type (may also be of the second conductivity type). Under the second condition, a second impurity concentration in the second semiconductor region 12 is different from a first impurity concentration in the first semiconductor region 11. For example, the second impurity concentration is lower than the first impurity concentration.

[0067] For example, the semiconductor member 10M (the first semiconductor region 11 and the second semiconductor region 12) can contain silicon. In this case, the second semiconductor region 12 can include at least one first element (p-type impurity) selected from a group consisting of boron and aluminum. The first semiconductor region 11 does not include the first element. Alternatively, a second concentration of the first element in the second semiconductor region 12 is higher than a first concentration of the first element in the first semiconductor region 11.

[0068] For example, the first semiconductor region 11 can contain at least one selected from the group consisting of phosphorus and arsenic (n-type impurity). The second semiconductor region 12 can also contain at least one selected from the group consisting of phosphorus and arsenic (n-type impurity). For example, in the second semiconductor region 12, a p-type impurity can be contained at a higher concentration than the concentration of the n-type impurity. For example, the second semiconductor region 12 can be formed by co-doping.

[0069] In the semiconductor device 112, the relationship of the first thickness t1 and the second thickness t2 described with respect to the semiconductor device 111 can be applied while the second semiconductor region 12 is provided. The loss Qgd in such a semiconductor device 112 can be reduced to about 0.58 times the loss Qgd in the semiconductor device 110.

[0070] Figure 6 A schematic cross-sectional view of a semiconductor device of the first embodiment.

[0071] As Figure 6 indicated, the second conductive member 62 is provided in the semiconductor device 113 of the embodiment. The structure of the semiconductor device 113 other than this can be the same as that of the semiconductor device 110.

[0072] The semiconductor device 113 further includes the second conductive member 62. The second conductive member 62 is between the first partial region 11a and the third electrode 53 in the first direction D1. In this example, the second conductive member 62 is between the fifth partial region 11e and the third electrode 53 in the first direction D1.

[0073] The first insulating member 41 further includes a fourth insulating region 41d. The second insulating region 41b is between the second conductive member 62 and the third electrode 53 in the first direction D1. The fourth insulating region 41d is between the first partial region 11a and the second conductive member 62 in the first direction D1. In this example, the fourth insulating region 41d is between the fifth partial region 11e and the second conductive member 62 in the first direction D1.

[0074] By providing the second conductive member 62, for example, the loss caused by the capacitance between the gate bottom and the drain can be reduced. The loss Qgd in such a semiconductor device 113 can be reduced to about 0.05 times the loss Qgd in the semiconductor device 110.

[0075] The second conductive member 62 can be electrically connected to the second electrode 52. The electrical connection can be obtained by a connection member 61L or the like.

[0076] Figure 7 A schematic cross-sectional view of a semiconductor device of the first embodiment.

[0077] As Figure 7 shown in FIG. 19, in the semiconductor device 114 of the embodiment, the shape of the second electrode 52 is different from that in the semiconductor device 110. The structure of the semiconductor device 114 other than this can be the same as that of the semiconductor device 110.

[0078] In the semiconductor device 114, the second electrode 52 includes a third electrode portion 52c. The third electrode portion 52c is connected to the first electrode portion 52a. The third electrode portion 52c is provided between the first insulating portion 42a and the first electrode portion 52a. The leakage current is also suppressed in the semiconductor device 114.

[0079] In the semiconductor device 114, the first semiconductor region 11 can further include a fifth partial region 11e. The fifth partial region 11e is between the first partial region 11a and the second insulating region 41b in the first direction Dl. The second insulating member 42 further includes a second insulating portion 42b. The second insulating portion 42b is between the fifth partial region 11e and the third electrode portion 52c in the second direction D2. The concentration of electric field is suppressed, for example, by the third electrode portion 52c.

[0080] (Second Embodiment)

[0081] Figure 8 FIG. 20 is a schematic perspective view of a semiconductor device of the second embodiment.

[0082] As Figure 8 shown in FIG. 20, in the semiconductor device 120 of the embodiment, the second electrode 52 includes a plurality of first electrode portions 52a. In the semiconductor device 120, various structures explained with respect to the first embodiment can be applicable.

[0083] In the semiconductor device 120, the third electrode 53 includes a first portion pl and a second portion p2. One of the plurality of first electrode portions 52a is between the first portion pl and the second portion p2 in the second direction D2. The third electrode 53 can include a third portion p3 and a fourth portion p4. Another of the plurality of first electrode portions 52a is between the third portion p3 and the fourth portion p4 in a third direction D3, for example. The third direction D3 intersects a plane including the first direction Dl and the second direction D2. The third direction D3 can be the Y-axis direction, for example.

[0084] According to the semiconductor device 120, it is easy to arrange the plurality of first electrode portions 52a at high density. At least a portion of the third electrode 53 can be lattice-shaped extending along the second direction D2 and the third direction D3, for example. The planar shape of at least a portion of the third electrode 53 can be honeycomb-shaped. The electrical connection of the third electrode 53 is easy.

[0085] In an embodiment, the semiconductor member 10M can contain silicon or diamond, or the like. The semiconductor member 10M can include a compound semiconductor. The compound semiconductor can include SiC, SiGe, GaN, GaAs, or the like, for example.

[0086] The first electrode 51 can include a metal, for example. The first electrode 51 can include at least one selected from the group consisting of Al, Au, Ag, Cu, Ni, Ti, and W, for example. The second electrode 52 can include at least one selected from the group consisting of Ni, Ti, Pt, Ir, TiO2, and Co, for example. The third electrode 53 can include a metal or polysilicon. At least any of the first conductive member 61 and the second conductive member 62 can include a metal or polysilicon.

[0087] In an embodiment, information about the shape or the like of the semiconductor region is obtained by electron microscope observation or the like, for example. Information about the composition and the element concentration in the semiconductor region is obtained by EDX (Energy Dispersive X-ray Spectroscopy) or SIMS (Secondary Ion Mass Spectrometry), or the like, for example. Information about the composition in the semiconductor region can also be obtained by inverse lattice space mapping or the like, for example.

[0088] An embodiment can include the following technical solutions.

[0089] (Technical Solution 1)

[0090] A semiconductor device including:

[0091] a first electrode;

[0092] a second electrode, wherein the second electrode includes a first electrode portion and a second electrode portion connected to the first electrode portion, in a first direction from the first electrode toward the second electrode;

[0093] a third electrode;

[0094] A semiconductor device includes a first semiconductor region, wherein the first semiconductor region includes a first partial region, a second partial region, a third partial region, and a fourth partial region, a second direction from the first partial region to the second partial region intersects the first direction, the third partial region is between the first partial region and the second partial region in the second direction, the first partial region is between the first electrode and the third electrode in the first direction, the second partial region is between the first electrode and the first electrode portion in the first direction, the fourth partial region is between the third partial region and the second electrode portion in the first direction, the fourth partial region is between the third electrode and the first electrode portion in the second direction, and the first electrode portion is contiguous to the fourth partial region.

[0095] A first insulating member includes a first insulating region and a second insulating region, wherein the first insulating region is between the third electrode and the fourth partial region in the second direction, and the second insulating region is between the first partial region and the third electrode in the first direction.

[0096] A second insulating member includes a first insulating portion, wherein the first insulating portion is between the second partial region and the first electrode portion in the first direction.

[0097] (Technical Solution 2)

[0098] According to Technical Solution 1, in the semiconductor device,

[0099] Further includes a first conductive member,

[0100] The first conductive member is between the second partial region and the first electrode portion in the first direction,

[0101] At least a portion of the first insulating portion is between the first conductive member and the first electrode portion.

[0102] (Technical Solution 3)

[0103] According to Technical Solution 2, in the semiconductor device,

[0104] The first semiconductor region further includes a fifth partial region,

[0105] The fifth partial region is between the first partial region and the second insulating region in the first direction,

[0106] The second insulating member further includes a second insulating portion,

[0107] The second insulating portion is between the fifth partial region and the first conductive member in the second direction.

[0108] (Technical Solution 4)

[0109] The semiconductor device according to Technical Solution 2 or 3, wherein

[0110] The first conductive member includes a first end and a second end,

[0111] The first end is between the second end and the first insulating portion in the first direction,

[0112] An upper end distance between the first electrode and the first end in the first direction is shorter than a third electrode distance between the first electrode and the third electrode in the first direction.

[0113] (Technical Solution 5)

[0114] The semiconductor device according to any one of Technical Solutions 2 to 4, wherein

[0115] The first conductive member is electrically connected to the second electrode.

[0116] (Technical Solution 6)

[0117] The semiconductor device according to Technical Solution 1, wherein

[0118] The second electrode further includes a third electrode portion connected to the first electrode portion,

[0119] The third electrode portion is provided between the first insulating portion and the first electrode portion.

[0120] (Technical Solution 7)

[0121] The semiconductor device according to Technical Solution 6, wherein

[0122] The first semiconductor region further includes a fifth partial region,

[0123] The fifth partial region is between the first partial region and the second insulating region in the first direction,

[0124] The second insulating member further includes a second insulating portion,

[0125] The second insulating portion is between the fifth partial region and the third electrode portion in the second direction.

[0126] (Technical Solution 8)

[0127] The semiconductor device according to any one of the aspects 1 to 3, wherein

[0128] A first electrode portion distance between the first electrode and the first electrode portion in the first direction is longer than a third electrode distance between the first electrode and the third electrode in the first direction.

[0129] (Aspect 9)

[0130] The semiconductor device according to any one of the aspects 1 to 8, wherein

[0131] The first electrode portion and the fourth partial region form a Schottky contact.

[0132] (Aspect 10)

[0133] The semiconductor device according to any one of the aspects 1 to 9, wherein

[0134] The first insulating region has a first thickness in the second direction,

[0135] The second insulating region has a second thickness in the first direction,

[0136] The second thickness is thicker than the first thickness.

[0137] (Aspect 11)

[0138] The semiconductor device according to the aspect 10, wherein

[0139] The ratio of the second thickness to the first thickness is 1.1 or more.

[0140] (Aspect 12)

[0141] The semiconductor device according to any one of the aspects 1 to 11, wherein

[0142] The semiconductor member further includes a second semiconductor region,

[0143] The second semiconductor region is between the first partial region and the second insulating region in the first direction,

[0144] The semiconductor member contains silicon,

[0145] The second semiconductor region contains at least one first element selected from a group consisting of boron and aluminum,

[0146] The first semiconductor region does not contain the first element, or a second concentration of the first element in the second semiconductor region is higher than a first concentration of the first element in the first semiconductor region.

[0147] (technical solution 13)

[0148] The semiconductor device according to technical solution 12, wherein

[0149] The first semiconductor region includes at least one selected from a group consisting of phosphorus and arsenic.

[0150] (technical solution 14)

[0151] The semiconductor device according to any one of technical solutions 1 to 11, wherein

[0152] The semiconductor member further includes a second semiconductor region,

[0153] The second semiconductor region is between the first partial region and the second insulating region in the first direction,

[0154] The first semiconductor region and the second semiconductor region satisfy a first condition or a second condition,

[0155] In the first condition, the first semiconductor region is one of a first conductivity type and a second conductivity type, and the second semiconductor region is the other of the first conductivity type and the second conductivity type,

[0156] In the second condition, the first semiconductor region and the second semiconductor region are the first conductivity type, and a second impurity concentration in the second semiconductor region is different from a first impurity concentration in the first semiconductor region.

[0157] (technical solution 15)

[0158] The semiconductor device according to any one of technical solutions 1 to 11, wherein

[0159] Further includes a second conductive member,

[0160] The second conductive member is between the first partial region and the third electrode in the first direction,

[0161] The first insulating member further includes a fourth insulating region,

[0162] The second insulating region is between the second conductive member and the third electrode in the first direction,

[0163] The fourth insulating region is between the first partial region and the second conductive member in the first direction.

[0164] (technical solution 16)

[0165] The semiconductor device according to any one of the aspects 1 to 15, wherein

[0166] The first insulating member further includes a third insulating region,

[0167] The third insulating region is between the third electrode and at least a portion of the second electrode portion in the first direction.

[0168] (Aspect 17)

[0169] The semiconductor device according to any one of the aspects 1 to 16, wherein

[0170] The first electrode portion includes a first face and a second face,

[0171] The first face and the second face intersect,

[0172] The first face opposes the first electrode,

[0173] The first face does not adjoin the first semiconductor region,

[0174] The second face adjoins the fourth partial region.

[0175] (Aspect 18)

[0176] The semiconductor device according to any one of the aspects 1 to 17, wherein

[0177] The second electrode includes a plurality of the first electrode portions,

[0178] The third electrode includes a first portion and a second portion,

[0179] One of the first electrode portions is between the first portion and the second portion in the second direction.

[0180] (Aspect 19)

[0181] The semiconductor device according to the aspect 18, wherein

[0182] The third electrode includes a third portion and a fourth portion,

[0183] Another of the first electrode portions is between the third portion and the fourth portion in a third direction,

[0184] The third direction intersects a plane including the first direction and the second direction.

[0185] (Aspect 20)

[0186] The semiconductor device according to 19, in which

[0187] At least a part of the third electrode is lattice-shaped extending in the second direction and the third direction.

[0188] According to the embodiments, a semiconductor device capable of improving characteristics can be provided.

[0189] The embodiments of the present application have been described above with reference to specific examples. However, the present application is not limited to these specific examples. For example, as to the specific structure of each element such as an electrode, a semiconductor member, a semiconductor region, and an insulating member included in the semiconductor device, as long as a person skilled in the art can implement the present application by appropriately selecting from the known range and obtain the same effects, it is included in the scope of the present application.

[0190] Further, a mode in which two or more elements in any of the specific examples are combined within a technically possible range is also included in the scope of the present application as long as it contains the gist of the present application.

[0191] Furthermore, all semiconductor devices that a person skilled in the art can implement by making appropriate design changes based on the semiconductor device described above as an embodiment of the present application are also within the scope of the present application as long as they contain the gist of the present application.

[0192] Further, it should be understood that various modifications and alterations thereof are conceivable to a person skilled in the art within the scope of the idea of the present application, and such modifications and alterations are also within the scope of the present application.

[0193] Although several embodiments of the present application have been described, these embodiments are presented by way of example only, and are not intended to limit the scope of the invention. These novel embodiments can be implemented in other various forms, and various omissions, substitutions, and changes can be made thereto without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope or gist of the invention, and are included in the invention recited in the claims and the scope equivalent thereto.

Claims

1. A semiconductor device comprising: Electrode 1; The second electrode, wherein... Along a first direction from the first electrode to the second electrode, the second electrode includes a first electrode portion and a second electrode portion connected to the first electrode portion; Third electrode; A semiconductor component includes a first semiconductor region, wherein the first semiconductor region includes a first partial region, a second partial region, a third partial region, and a fourth partial region, a second direction from the first partial region to the second partial region intersects with the first direction, the third partial region is located between the first partial region and the second partial region in the second direction, the first partial region is located between a first electrode and a third electrode in the first direction, the second partial region is located between the first electrode and a first electrode portion in the first direction, the fourth partial region is located between the third partial region and the second electrode portion in the first direction, the fourth partial region is located between the third electrode and the first electrode portion in the second direction, and the first electrode portion is connected to the fourth partial region. A first insulating member includes a first insulating region and a second insulating region, wherein the first insulating region is located between the third electrode and the fourth partial region in the second direction, and the second insulating region is located between the first partial region and the third electrode in the first direction; and The second insulating member includes a first insulating portion, wherein the first insulating portion is located between the second portion region and the first electrode portion in the first direction.

2. The semiconductor device according to claim 1, wherein, It also has a first conductive component. The first conductive member is located in the first direction between the second portion region and the first electrode portion. At least a portion of the first insulating portion is located between the first conductive member and the first electrode portion.

3. The semiconductor device according to claim 2, wherein, The first semiconductor region also includes a fifth region. The fifth portion of the region is located between the first portion of the region and the second insulating region in the first direction. The second insulating member also includes a second insulating portion. The second insulating portion is located in the second direction between the fifth portion region and the first conductive member.

4. The semiconductor device according to claim 2 or 3, wherein, The first conductive component includes a first end and a second end. The first end is located between the second end and the first insulating portion in the first direction. The distance between the first electrode and the first end along the first direction is shorter than the distance between the first electrode and the third electrode along the first direction.

5. The semiconductor device according to any one of claims 2 to 4, wherein, The first conductive component is electrically connected to the second electrode.

6. The semiconductor device according to claim 1, wherein, The second electrode also includes a third electrode portion connected to the first electrode portion. The third electrode portion is disposed between the first insulating portion and the first electrode portion.

7. The semiconductor device according to claim 6, wherein, The first semiconductor region also includes a fifth region. The fifth portion of the region is located between the first portion of the region and the second insulating region in the first direction. The second insulating member also includes a second insulating portion. The second insulating portion is located in the second direction between the fifth portion region and the third electrode portion.

8. The semiconductor device according to any one of claims 1 to 3, wherein, The distance between the first electrode and the first electrode portion along the first direction is longer than the distance between the first electrode and the third electrode along the first direction.

9. The semiconductor device according to any one of claims 1 to 8, wherein, The first electrode portion and the fourth portion form a Schottky contact.

10. The semiconductor device according to any one of claims 1 to 9, wherein, The first insulating region has a first thickness along the second direction. The second insulating region has a second thickness along the first direction. The second thickness is thicker than the first thickness.

11. The semiconductor device according to claim 10, wherein, The ratio of the second thickness to the first thickness is 1.1 or more.

12. The semiconductor device according to any one of claims 1 to 11, wherein, The semiconductor component further includes a second semiconductor region. The second semiconductor region is located between the first partial region and the second insulating region in the first direction. The semiconductor component contains silicon. The second semiconductor region contains at least one first element selected from the group consisting of boron and aluminum. The first semiconductor region does not contain the first element, or the second concentration of the first element in the second semiconductor region is higher than the first concentration of the first element in the first semiconductor region.

13. The semiconductor device according to claim 12, wherein, The first semiconductor region comprises at least one selected from the group consisting of phosphorus and arsenic.

14. The semiconductor device according to any one of claims 1 to 11, wherein, The semiconductor component further includes a second semiconductor region. The second semiconductor region is located between the first partial region and the second insulating region in the first direction. The first semiconductor region and the second semiconductor region satisfy either the first condition or the second condition. Under the first condition, the first semiconductor region is one of a first conductivity type and a second conductivity type, and the second semiconductor region is the other of the first conductivity type and the second conductivity type. Under the second condition, the first semiconductor region and the second semiconductor region are of the first conductivity type, and the second impurity concentration in the second semiconductor region is different from the first impurity concentration in the first semiconductor region.

15. The semiconductor device according to any one of claims 1 to 11, wherein, It also has a second conductive component. The second conductive member is located in the first direction between the first partial region and the third electrode. The first insulating member also includes a fourth insulating region. The second insulating region is located between the second conductive member and the third electrode in the first direction. The fourth insulating region is located in the first direction between the first partial region and the second conductive member.

16. The semiconductor device according to any one of claims 1 to 15, wherein, The first insulating member also includes a third insulating region. The third insulating region is located in the first direction between at least a portion of the third electrode and the second electrode portion.

17. The semiconductor device according to any one of claims 1 to 16, wherein, The first electrode portion includes a first surface and a second surface. The first surface intersects with the second surface. The first surface is opposite to the first electrode. The first surface is not in contact with the first semiconductor region. The second surface is connected to the fourth part of the region.

18. The semiconductor device according to any one of claims 1 to 17, wherein, The second electrode includes multiple portions of the first electrode. The third electrode includes a first part and a second part. One of the plurality of the first electrode portions is located between the first portion and the second portion in the second direction.

19. The semiconductor device according to claim 18, wherein, The third electrode includes a third part and a fourth part. Another of the plurality of first electrode portions is located in the third direction between the third portion and the fourth portion. The third direction intersects with a plane that includes the first direction and the second direction.

20. The semiconductor device of claim 19, wherein, At least a portion of the third electrode is a lattice structure extending along the second and third directions.

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