Preparation method of functional layer of perovskite solar cell and perovskite solar cell

Abstract

The invention relates to the technical field of perovskite solar cells, and particularly provides a preparation method of a functional layer of a perovskite solar cell and the perovskite solar cell. The preparation method comprises the following steps: preparing the functional layer by adopting a slit coating method; the functional layer is at least one of a hole transport layer and a perovskite light absorption layer; wherein dynamic treatment is carried out in the whole coating process and comprises the following steps: (a) before coating, carrying out at least one of heating pretreatment and ultrasonic pretreatment on a coating solution; and (b) in the coating process, at least one of solution heating, ultrasonic treatment and substrate heating is synchronously implemented. According to the method, the dispersion uniformity of the solute in the coating solution is ensured, uniform anchoring of the SAM on the substrate is ensured, the prepared perovskite thin film is relatively good in crystallization quality, defects at the interface of the perovskite thin film can be reduced, non-radiative recombination of carriers at the interface of the perovskite thin film can be effectively reduced, and the service life of the perovskite thin film is prolonged. And the photoelectric property and the stability of the perovskite solar cell are improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of perovskite solar cells, and particularly provides a preparation method of a perovskite solar cell functional layer and a perovskite solar cell. BACKGROUND

[0002] Solar energy, as a clean and renewable energy, has attracted extensive attention from the academic and industrial circles. At present, perovskite solar cells (PSC) are widely concerned in the third generation of solar cells due to their excellent photoelectric performance, high photoelectric conversion efficiency (the highest certified efficiency of single-junction perovskite solar cells has reached 26.1%), low cost and simple process in solution preparation.

[0003] At present, the structure of formal and trans perovskite solar cells mainly consists of an electron transport layer (ETL), a perovskite light-absorbing layer, a hole transport layer (HTL) and a metal electrode. At present, in the process of preparing perovskite solar cells by solution method, a slot coating method is usually used to prepare high-quality large-area perovskite thin films, and a perovskite passivation strategy is combined to reduce the defects of perovskite bulk phase and surface interface, further reduce the non-radiative recombination of carriers in the perovskite cell, and improve the photoelectric performance and stability of the cell.

[0004] However, the above-mentioned various preparation methods and strategies still have many problems, such as the poor performance of the hole transport layer SAM in the process of preparing perovskite solar cells by using the slot coating method, which is due to the aggregation of SAM in the solvent. In the conventional slot coating process, the SAM material will be unevenly distributed on the substrate when coated, which further affects the crystalline quality of the perovskite thin film and the photoelectric performance of the perovskite solar cell. The crystalline quality of the perovskite thin film is not easy to control in the coating process, which results in a low efficiency of the prepared perovskite solar cell. In the preparation process of perovskite solar cells, controlling the quality of each functional layer thin film is crucial to the overall efficiency and stability of the device.

[0005] Therefore, it is necessary to find a method which can effectively avoid the aggregation of SAM material, effectively improve the solution dispersibility and improve the crystalline quality of perovskite thin film. SUMMARY

[0006] The present application aims to solve the above technical problems, i.e. to solve the problem that in the prior art, when perovskite solar cells are prepared by using the slot coating method, it is not easy to control the crystalline quality of the perovskite thin film, the SAM solution of the hole transport layer is prone to aggregation on the substrate, which affects the uniformity of coating and thus affects the photoelectric performance of the perovskite solar cell.

[0007] In a first aspect, the present application provides a method for preparing a functional layer of a perovskite solar cell, wherein the method comprises: preparing the functional layer by using a slot-die coating method; the functional layer is at least one of a hole transport layer and a perovskite light absorption layer; and the method implements dynamic processing during the whole coating process.

[0008] The dynamic processing comprises:

[0009] (a) before coating, at least one of heating pretreatment and ultrasonic pretreatment is performed on the coating solution;

[0010] (b) during coating, at least one of solution heating, ultrasonic treatment and substrate heating is simultaneously performed.

[0011] In a preferred technical solution of the above method, in the heating pretreatment, the heating temperature is 30-100℃; and / or, in the ultrasonic pretreatment, the ultrasonic frequency is ≥20KHz and the ultrasonic pretreatment time is 10-20min.

[0012] In a preferred technical solution of the above method, in the heating pretreatment, the heating temperature is 40-60℃; and / or, in the ultrasonic pretreatment, the ultrasonic frequency is 20-100KHz.

[0013] In a preferred technical solution of the above method, in the solution heating, the heating temperature is 30-100℃; and / or, in the ultrasonic treatment, the ultrasonic frequency is ≥20KHz; and / or, in the substrate heating, the heating temperature is 50-150℃.

[0014] In a preferred technical solution of the above method, in the solution heating, the heating temperature is 40-60℃; and / or, in the ultrasonic treatment, the ultrasonic frequency is 20-100KHz; and / or, in the substrate heating, the heating temperature is 80-120℃.

[0015] In a preferred technical solution of the above method, when the hole transport layer is prepared, the coating solution is a coating solution containing SAM.

[0016] In a preferred technical solution of the above method, the concentration of SAM in the coating solution is 0.5-1mg / mL.

[0017] In a preferred technical solution of the above method, the SAM is a self-assembled monolayer material containing phosphonic acid group, carboxylic acid group or thiol group anchoring group.

[0018] In the preferred technical solution of the above preparation method, the SAM is selected from [2-(9H-carbazol-9-yl)ethyl]phosphonic acid, (2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl)phosphonic acid, (4-(3,6-dimethyl-9H-carbazol-9-yl)ethyl)phosphonic acid, (2-(4-(bis(4-methoxyphenyl)amino)phenyl)-1-cyanotitanium)phosphonic acid, or (4-(2,7-dibromo-9,9-dimethylacridin-10(9H)-yl)butyl)phosphonic acid.

[0019] In a second aspect, the present application provides a perovskite solar cell, wherein the perovskite solar cell comprises:

[0020] a first electrode;

[0021] a hole transport layer;

[0022] a perovskite light absorption layer;

[0023] an electron transport layer;

[0024] a second electrode;

[0025] wherein the hole transport layer is prepared by the above preparation method;

[0026] and / or the perovskite light absorption layer is prepared by the above preparation method.

[0027] The present application has the following technical effects:

[0028] (1) The preparation method of the perovskite solar cell functional layer provided by the present application, when the hole transport layer is prepared by the slot coating method, dynamic processing is implemented throughout the coating process to maintain the dispersion state of the hole transport layer functional molecules (SAM) before film formation, thereby ensuring the uniformity of the solute dispersion in the coating solution, preventing the aggregation of the SAM solution, improving the uniformity of the coating, and ensuring the uniform anchoring of the SAM on the substrate, thereby improving the photoelectric performance of the perovskite solar cell.

[0029] (2) The preparation method of the perovskite solar cell functional layer provided by the present application, when the perovskite light absorption layer is prepared by the slot coating method, dynamic processing is implemented throughout the coating process to maintain the dispersion state of the perovskite precursor molecules before film formation, thereby improving the crystalline quality of the perovskite thin film, reducing the defects at the interface of the perovskite thin film, effectively reducing the non-radiative recombination of carriers at the interface of the perovskite thin film, and improving the photoelectric performance and stability of the perovskite solar cell. BRIEF DESCRIPTION OF DRAWINGS

[0030] The preferred embodiments of the present application will be described below with reference to the accompanying drawings, in which:

[0031] Figure 1is a structural schematic diagram of a perovskite solar cell according to an embodiment of the present application;

[0032] Figure 2 is a structural schematic diagram of a perovskite solar cell according to another embodiment of the present application. DETAILED DESCRIPTION

[0033] The preferred embodiments of the present application will be described below with reference to the accompanying drawings. It should be understood by those skilled in the art that the embodiments are only used to explain the technical principles of the present application and are not intended to limit the scope of protection of the present application.

[0034] In the present application, the term "and / or" describes the association relationship of the associated objects, which means that there can be three kinds of relationships, for example, A and / or B can represent the following three cases: A exists alone, A and B exist together, and B exists alone. Wherein A and B can be singular or plural. The character " / " generally represents an "or" relationship between the associated objects before and after it.

[0035] In the present application, "at least one" means one or more, and "multiple" means two or more. "At least one of the following" or the like means any combination of these items, including any combination of single item or multiple items. For example, "at least one of a, b, or c", or "at least one of a, b, and c", can represent a, b, c, a-b (i.e. a and b), a-c, b-c, or a-b-c, wherein a, b, and c can be single or multiple.

[0036] It should be understood that in various embodiments of the present application, the size of the sequence number of the above-mentioned processes does not mean the order of execution, and part or all of the steps can be executed in parallel or in sequence. The execution order of each process should be determined according to its function and inherent logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0037] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments and are not intended to limit the present application. The singular forms "a", "said" and "the" used in the embodiments of the present application and the appended claims are also intended to include the plural forms, unless the context clearly indicates otherwise.

[0038] The weight of the related components mentioned in the specification of the embodiments of the present application can not only refer to the specific content of each component, but also represent the weight ratio relationship between each component. Therefore, as long as the content of the related components in the specification of the embodiments of the present application is enlarged or reduced in proportion, it is within the scope disclosed in the specification of the embodiments of the present application. Specifically, the mass mentioned in the specification of the embodiments of the present application can be μg, mg, g, kg and other mass units commonly known in the chemical field.

[0039] The terms "first", "second", "third", etc. are used only for the purpose of description, to distinguish between objects, such as substances, from each other, and cannot be understood as indicating or implying relative importance or implying the number of the technical features indicated. For example, without departing from the scope of the embodiments of the present application, the first XX can also be referred to as the second XX, and similarly, the second XX can also be referred to as the first XX. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features.

[0040] The experimental methods in the following examples are all conventional methods, and the materials, reagents, etc. used in the following examples can be obtained from commercial channels unless otherwise specified.

[0041] Based on the existing technology indicated in the background art, when the perovskite solar cell is prepared by using the slot coating method, there are problems that the crystallization quality of the perovskite thin film is not easy to control, the SAM solution of the hole transport layer is prone to agglomeration on the substrate, the uniformity of coating is affected, and thus the photoelectric performance of the perovskite solar cell is affected. The present application provides a preparation method of a functional layer of a perovskite solar cell. The method uses the slot coating method to prepare a hole transport layer and / or a perovskite light absorption layer. Dynamic processing is implemented throughout the coating process to maintain the dispersion state of the hole transport layer functional molecules and / or the perovskite precursor molecules before film formation, thereby ensuring the dispersion uniformity of the solutes in the coating solution, preventing the agglomeration of the SAM solution, improving the uniformity of coating, and ensuring the uniform anchoring of the SAM on the substrate. The prepared perovskite thin film has good crystallization quality, can reduce the defects at the interface of the perovskite thin film, can effectively reduce the non-radiative recombination of carriers at the interface of the perovskite thin film, and can improve the photoelectric performance and stability of the perovskite solar cell.

[0042] Specifically, the present application provides, in a first aspect, a preparation method of a functional layer of a perovskite solar cell. The preparation method comprises: using a slot coating method to prepare the functional layer; the functional layer is at least one of a hole transport layer and a perovskite light absorption layer; wherein dynamic processing is implemented throughout the coating process.

[0043] The dynamic processing comprises:

[0044] (a) before coating, at least one of heating pretreatment and ultrasonic pretreatment is performed on the coating solution;

[0045] (b) during coating, at least one of solution heating, ultrasonic treatment, and substrate heating is simultaneously implemented.

[0046] The application maintains the dispersion state of the hole transport layer functional molecules and / or perovskite precursor molecules before film formation through dynamic processing during the whole coating process, thereby ensuring the dispersion uniformity of solutes in the coating solution, preventing the agglomeration of the SAM solution, improving the uniformity of coating, and ensuring the uniform anchoring of the SAM on the substrate, so that the prepared perovskite thin film has good crystallization quality, the defects at the interface of the perovskite thin film can be reduced, the non-radiative recombination of carriers at the interface of the perovskite thin film can be effectively reduced, the photoelectric performance and stability of the perovskite solar cell are improved, which has important significance for preparing large-area perovskite solar cells.

[0047] Specifically, in the application, on the one hand, the dispersion uniformity of solutes in the solution is ensured, the agglomeration of the SAM solution is prevented, and the uniformity of coating is improved by heating and / or ultrasonic pretreatment of the coating solution before coating; on the other hand, one-time film formation during SAM coating is realized by simultaneously implementing solution heating, ultrasonic treatment and / or substrate heating during coating, and the agglomeration of SAM on the coating substrate is further prevented, so that the SAM is uniformly anchored on the coating substrate, the prepared perovskite thin film has good crystallization quality, the defects at the interface of the perovskite thin film can be reduced, the non-radiative recombination of carriers at the interface of the perovskite thin film can be effectively reduced, the photoelectric performance and stability of the perovskite solar cell are improved, which has important significance for improving the photoelectric performance of the perovskite solar cell and preparing large-area perovskite solar cells.

[0048] In some preferred embodiments, in the heating pretreatment, the heating temperature is 30-100℃, preferably 40-60℃; and / or, in the ultrasonic pretreatment, the ultrasonic frequency is ≥20KHz, preferably 20-100KHz, and the ultrasonic pretreatment time is 10-20min.

[0049] For example, in some exemplary embodiments, in the heating pretreatment, the heating temperature is 30℃, 40℃, 50℃, 60℃, 70℃, 80℃, 90℃, 100℃ or any value in the range.

[0050] In some preferred exemplary embodiments, in the heating pretreatment, the heating temperature is 40℃, 45℃, 50℃, 55℃, 60℃ or any value in the range.

[0051] In some exemplary embodiments, in the ultrasonic pretreatment, the ultrasonic frequency is 20KHz, 40KHz, 60KHz, 80KHz, 100KHz or any value in the range.

[0052] In some exemplary embodiments, the ultrasonic pre-treatment has an ultrasonic pre-treatment time of 10 min, 12 min, 14 min, 15 min, 16 min, 18 min, 20 min, or any value within the range.

[0053] In some preferred embodiments, the solution heating has a heating temperature of 30-100℃; and / or, the ultrasonic treatment has an ultrasonic frequency of ≥20 KHz; and / or, the substrate heating has a heating temperature of 50-150℃.

[0054] In some more preferred embodiments, the solution heating has a heating temperature of 40-60℃; and / or, the ultrasonic treatment has an ultrasonic frequency of 20-100 KHz; and / or, the substrate heating has a heating temperature of 80-120℃.

[0055] In some exemplary embodiments, the solution heating has a heating temperature of 30℃, 40℃, 50℃, 60℃, 70℃, 80℃, 90℃, 100℃, or any value within the range.

[0056] In some preferred exemplary embodiments, the solution heating has a heating temperature of 40℃, 45℃, 50℃, 55℃, 60℃, or any value within the range.

[0057] In some exemplary embodiments, the ultrasonic treatment has an ultrasonic frequency of 20 KHz, 40 KHz, 60 KHz, 80 KHz, 100 KHz, or any value within the range.

[0058] In some exemplary embodiments, the substrate heating has a heating temperature of 50℃, 60℃, 70℃, 80℃, 90℃, 100℃, 110℃, 120℃, 130℃, 140℃, 150℃, or any value within the range.

[0059] In some preferred exemplary embodiments, the substrate heating has a heating temperature of 80℃, 85℃, 90℃, 95℃, 100℃, 105℃, 110℃, 115℃, 120℃, or any value within the range.

[0060] It should be noted that, in the present application, the dynamic treatment implemented simultaneously in coating can be achieved by the following methods:

[0061] The solution heating implemented simultaneously in coating can be achieved by embedding heating wires inside the coating head;

[0062] The ultrasonic treatment implemented simultaneously in coating can be achieved by installing ultrasonic vibrators outside the coating head;

[0063] Simultaneous heating of the substrate during coating can be achieved by placing a heating plate below the coating platform.

[0064] In some specific embodiments, when preparing the hole transport layer, the coating solution is a coating solution containing SAM.

[0065] In some specific embodiments, the concentration of SAM in the coating solution is 0.5-1 mg / mL.

[0066] In some exemplary embodiments, the concentration of SAM in the coating solution is 0.5 mg / mL, 0.8 mg / mL, 1 mg / mL, or any value within the range.

[0067] In some specific embodiments, when preparing the perovskite light-absorbing layer, the coating solution is a perovskite precursor solution.

[0068] When coating the perovskite precursor solution, the heating temperature should not be too high, generally controlled below 100℃, as this is conducive to the nucleation and crystallization of perovskite.

[0069] Specifically, in this invention, when a heating pretreatment is performed before coating the perovskite precursor solution, the heating temperature is 40-60℃.

[0070] Furthermore, in the process of coating the perovskite precursor solution, when the solution is heated simultaneously, the heating temperature is 40-60°C; when the substrate is heated simultaneously, the heating temperature of the substrate is 50-60°C.

[0071] In some specific embodiments, the SAM is a self-assembled monolayer material containing phosphonic acid groups, carboxylic acid groups, or thiol anchoring groups.

[0072] Anchoring groups such as phosphonic acid groups, carboxylic acid groups, or thiol groups can enhance the adhesion between SAM and transparent conductive substrates.

[0073] In some preferred embodiments, the SAM is selected from [2-(9H-carbazole-9-yl)ethyl]phosphonic acid (abbreviated as 2PACZ), (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl)phosphonic acid (abbreviated as MeO-2PACZ), (4-(3,6-dimethyl-9H-carbazole-9-yl)ethyl)phosphonic acid (abbreviated as Me-4PACZ), (2-(4-(bis(4-methoxyphenyl)amino)phenyl)-1-cyanotitanyl)phosphonic acid (abbreviated as MPA-CPA) or (4-(2,7-dibromo-9,9-dimethylacridin-10(9H)yl)butyl)phosphonic acid (abbreviated as DMAcPA).

[0074] In some exemplary embodiments, when the SAM is 2PACZ, its concentration is 0.5 mg / mL.

[0075] In some exemplary embodiments, when the SAM is MeO-2PACZ, its concentration is 0.5 mg / mL.

[0076] In some exemplary embodiments, when the SAM is MPA-CPA, its concentration is 1 mg / mL.

[0077] In some exemplary embodiments, when the SAM is DMAcPA, its concentration is 1 mg / mL.

[0078] In some exemplary embodiments, when the SAM is Me-4PACZ, its concentration is 1 mg / mL.

[0079] Furthermore, in a second aspect, the present invention provides a perovskite solar cell, the perovskite solar cell comprising:

[0080] First electrode 100;

[0081] Hole transport layer 200;

[0082] Perovskite light-absorbing layer 300;

[0083] Electron transport layer 500;

[0084] Second electrode 700;

[0085] The hole transport layer 200 is prepared using the above-described preparation method; and / or the perovskite light absorption layer 300 is prepared using the above-described preparation method.

[0086] In one exemplary embodiment, such as Figure 1 and Figure 2 As shown, the perovskite solar cell further includes a passivation layer 400 and / or a buffer layer 600. For example... Figure 2 As shown, the passivation layer 400 is located between the perovskite light-absorbing layer 300 and the electron transport layer 500; as Figure 1 and Figure 2 As shown, the buffer layer 600 is located between the electron transport layer 500 and the second electrode 700.

[0087] Alternatively, the buffer layer 600 can also be a hole-blocking layer.

[0088] In some specific embodiments, the first electrode 100 includes a flexible substrate or a rigid substrate, specifically including ITO (indium tin oxide) transparent conductive glass, FTO (fluorine-doped tin oxide) transparent conductive glass, IWO (tungsten-doped indium oxide) transparent conductive glass and AZO (aluminum-doped zinc oxide) transparent conductive glass.

[0089] The perovskite light-absorbing layer 300 is composed of ABX3 type perovskite material, and its composition includes:

[0090] A-position monovalent cation: selected from methylamine (CH3NH3) + ), formamidin (HC(NH2)2 + ), acetamiprid (C2H5NH3) + ), Cesium (Cs) + ) or rubidium (Rb + One or more of the following;

[0091] B-site divalent metal ion: selected from lead (Pb) 2+ ), Tin (Sn) 2+ ), copper (Cu) 2+ or germanium (Ge) 2+ One or more of the following;

[0092] X-position monovalent anion: selected from fluoride ion (F - ), iodide ions (I) - ), bromide ions (Br) - ), chloride ions (Cl) - ), tetrafluoroborate (BF4) - ), hexafluorophosphate (PF6) - ) or thiocyanate (SCN) - One or more of the following;

[0093] The concentration of divalent metal ions (B-site) in the perovskite precursor solution is 200-600 mg / mL, preferably 300-500 mg / mL, to ensure the uniformity and crystal quality of the film.

[0094] In some specific embodiments, the organic solvent in the perovskite precursor solution includes at least one of dimethyl sulfoxide (DMSO), N,N-dimethylformamide (DMF), acetonitrile (ACN), dimethylpyrrolidone (NMP), 2-methoxyethanol, and γ-butyrolactone.

[0095] In some specific embodiments, the material of the electron transport layer 500 includes PCBM ([6,6]-phenyl-C 71 (-isomethyl butyrate), C 60 and ICBA (Indene-C) 60 One or more of the following: (biadruplexes).

[0096] In some specific embodiments, the material of the passivation layer 400 includes one or more of alkaline halides, organic molecules, organohalide salts, polymers, metal halides, etc., such as lithium fluoride (LiF), phenylethyl ammonium iodide (PEAI), phenylethyl ammonium chloride (PEACl), phenylethyl ammonium bromide (PEABr), or propylenediamine iodide (PDADI), etc.

[0097] In some specific embodiments, the second electrode 700 includes a metal electrode or a transparent metal oxide electrode, specifically including Ag electrode, Au electrode, Cu electrode, ITO, IZO, AZO and IWO, etc.

[0098] The following detailed embodiments illustrate the preparation method of the hole transport layer of the present invention, as well as the hole transport layer and the perovskite solar cell.

[0099] Example 1

[0100] The structure of the perovskite solar cell in this embodiment is as follows: Figure 1 As shown, specifically, the perovskite solar cell includes a first electrode 100, a hole transport layer 200, a perovskite light absorption layer 300, an electron transport layer 500, a buffer layer 600, and a second electrode 700, which are distributed sequentially from bottom to top.

[0101] The perovskite solar cell of this embodiment is fabricated through the following steps:

[0102] S1, Provide the first electrode 100

[0103] Clean the ITO glass and dry it with nitrogen gas to serve as the first electrode 100.

[0104] S2, Prepare a hole transport layer 200

[0105] Hole transport layer material Me-4PACZ was dissolved in an ethanol solution with a concentration of 1 mg / mL to obtain a coating solution containing SAM.

[0106] Before coating, the obtained coating solution was subjected to ultrasonic pretreatment at a frequency of 40 kHz for 10 min.

[0107] The above-mentioned ultrasonically pretreated coating solution is directly coated on the first electrode 100 by slit coating. During the coating process, ultrasonic treatment is performed simultaneously at a frequency of 40 kHz. After coating, the solvent is removed by annealing at a temperature of 100°C for 10 minutes to form a thin film, thus obtaining the hole transport layer 200.

[0108] S3, Preparation of a perovskite light-absorbing layer 300

[0109] FAI, PbI2, MACl, MAI, and CsI powders were mixed in a molar ratio (FAI:PbI2:MACl:MAI:CsI = 0.9:1:0.2:0.05:0.05), and dissolved in 1 mL of solvent (DMF:NMP = 5:1) to obtain CsI. 0.05 FA 0.90 MA 0.05 PbI3 perovskite precursor solution.

[0110] Before coating, the obtained perovskite precursor solution was subjected to ultrasonic pretreatment at a frequency of 40 kHz.

[0111] The perovskite precursor solution after ultrasonic treatment was directly coated onto the hole transport layer 200 by a slit coating method. During the coating process, ultrasonic treatment was performed simultaneously at a frequency of 40 kHz. After coating, an annealing treatment was performed to remove the solvent. The temperature of the first annealing treatment was 150°C and the time was 30 min, resulting in the perovskite light absorption layer 300.

[0112] S4, Fabrication of electron transport layer 500

[0113] A 30nm thick C layer was deposited on the perovskite light-absorbing layer 300 by vacuum evaporation. 60 An electron transport layer of 500 was obtained.

[0114] S5, Prepare a buffer layer 600

[0115] A 6nm thick BCP is deposited on the electron transport layer 500 by vacuum evaporation to obtain the buffer layer 600.

[0116] S6, Prepare the second electrode 700

[0117] A Cu electrode with a thickness of 150 nm was deposited on the buffer layer 600 by vacuum evaporation to obtain the second electrode 700.

[0118] Example 2

[0119] The structure of the perovskite solar cell in this embodiment is the same as that in Embodiment 1, and its preparation method is the same as that in Embodiment 1. The difference from Embodiment 1 is:

[0120] In step S2, before coating, the obtained coating solution is pretreated by heating at a temperature of 40°C; during coating, the solution is heated simultaneously at a temperature of 40°C.

[0121] In step S3, before coating, the obtained perovskite precursor solution is pretreated by heating at a temperature of 40°C; during coating, the solution is heated simultaneously at a temperature of 40°C.

[0122] Example 3

[0123] The structure of the perovskite solar cell in this embodiment is the same as that in Embodiment 1, and its preparation method is the same as that in Embodiment 1. The difference from Embodiment 1 is:

[0124] In step S2, before coating, the obtained coating solution is pretreated by heating at a temperature of 60°C; during coating, the substrate is heated simultaneously at a temperature of 60°C.

[0125] In step S3, before coating, the obtained perovskite precursor solution is pretreated by heating at a temperature of 40°C; during coating, the substrate is heated simultaneously at a temperature of 60°C.

[0126] Example 4

[0127] The structure of the perovskite solar cell in this embodiment is the same as that in Embodiment 1, and its preparation method is the same as that in Embodiment 1. The difference from Embodiment 1 is:

[0128] In step S2, before coating, the obtained coating solution is subjected to ultrasonic pretreatment at a frequency of 20 kHz for 20 min; during coating, ultrasonic treatment is performed simultaneously at a frequency of 20 kHz.

[0129] In step S3, before coating, the obtained perovskite precursor solution is subjected to ultrasonic pretreatment at a frequency of 20 kHz; during coating, ultrasonic treatment is performed simultaneously at a frequency of 20 kHz.

[0130] Example 5

[0131] The structure of the perovskite solar cell in this embodiment is the same as that in Embodiment 1, and its preparation method is the same as that in Embodiment 1. The difference from Embodiment 1 is:

[0132] In step S2, before coating, the obtained coating solution is subjected to ultrasonic pretreatment at a frequency of 100 kHz for 15 min; during coating, ultrasonic treatment is performed simultaneously at a frequency of 100 kHz.

[0133] In step S3, before coating, the obtained perovskite precursor solution is subjected to ultrasonic pretreatment at a frequency of 100 kHz; during coating, ultrasonic treatment is performed simultaneously at a frequency of 100 kHz.

[0134] Example 6

[0135] The structure of the perovskite solar cell in this embodiment is the same as that in Embodiment 1, and its preparation method is the same as that in Embodiment 1. The difference from Embodiment 1 is:

[0136] In step S2, before coating, the obtained coating solution is pretreated by heating at a temperature of 40°C; during coating, the substrate is heated simultaneously at a temperature of 80°C.

[0137] In step S3, before coating, the obtained perovskite precursor solution is pretreated by heating at a temperature of 40°C; during coating, the substrate is heated simultaneously at a temperature of 60°C.

[0138] Example 7

[0139] The structure of the perovskite solar cell in this embodiment is the same as that in Embodiment 1, and its preparation method is the same as that in Embodiment 1. The difference from Embodiment 1 is:

[0140] In step S2, before coating, the obtained coating solution is pretreated by heating at a temperature of 30°C; during coating, the substrate is heated simultaneously at a temperature of 100°C.

[0141] In step S3, before coating, the obtained perovskite precursor solution is pretreated by heating at a temperature of 30°C; during coating, the substrate is heated simultaneously at a temperature of 60°C.

[0142] Example 8

[0143] The structure of the perovskite solar cell in this embodiment is the same as that in Embodiment 1, and its preparation method is the same as that in Embodiment 1. The difference from Embodiment 1 is:

[0144] In step S2, before coating, the obtained coating solution is pretreated by heating at a temperature of 50°C; during coating, the substrate is heated simultaneously at a temperature of 50°C.

[0145] In step S3, before coating, the obtained perovskite precursor solution is pretreated by heating at a temperature of 50°C; during coating, the substrate is heated simultaneously at a temperature of 50°C.

[0146] Example 9

[0147] The structure of the perovskite solar cell in this embodiment is the same as that in Embodiment 1, and its preparation method is the same as that in Embodiment 1. The difference from Embodiment 1 is:

[0148] In step S2, before coating, the obtained coating solution is subjected to ultrasonic pretreatment at a frequency of 55 kHz for 12 min; during coating, the substrate is heated simultaneously at a temperature of 100 ℃.

[0149] In step S3, before coating, the obtained perovskite precursor solution is subjected to ultrasonic pretreatment at a frequency of 55 kHz; during coating, the substrate is heated simultaneously at a temperature of 60 °C.

[0150] Example 10

[0151] The structure of the perovskite solar cell in this embodiment is the same as that in Embodiment 1, and its preparation method is the same as that in Embodiment 1. The difference from Embodiment 1 is:

[0152] In step S2, the hole transport layer material used is 2PACZ with a concentration of 0.5 mg / mL.

[0153] Example 11

[0154] The structure of the perovskite solar cell in this embodiment is the same as that in Embodiment 1, and its preparation method is the same as that in Embodiment 1. The difference from Embodiment 1 is:

[0155] In step S2, the hole transport layer material used is MeO-2PACZ with a concentration of 0.5 mg / mL.

[0156] Example 12

[0157] The structure of the perovskite solar cell in this embodiment is the same as that in Embodiment 1, and its preparation method is the same as that in Embodiment 1. The difference from Embodiment 1 is:

[0158] In step S2, the hole transport layer material used is MPA-CPA with a concentration of 1 mg / mL.

[0159] Example 13

[0160] The structure of the perovskite solar cell in this embodiment is the same as that in Embodiment 1, and its preparation method is the same as that in Embodiment 1. The difference from Embodiment 1 is:

[0161] In step S2, the hole transport layer material used is DMAcPA with a concentration of 0.8 mg / mL.

[0162] Example 14

[0163] The structure of the perovskite solar cell in this embodiment is the same as that in Embodiment 1, and its preparation method is the same as that in Embodiment 1. The difference from Embodiment 1 is:

[0164] In step S3, the obtained perovskite precursor solution was not subjected to ultrasonic pretreatment before coating; and ultrasonic treatment was not performed simultaneously during coating.

[0165] Example 15

[0166] The structure of the perovskite solar cell in this embodiment is the same as that in Embodiment 1, and its preparation method is the same as that in Embodiment 1. The difference from Embodiment 1 is:

[0167] In step S2, the obtained coating solution was not subjected to ultrasonic pretreatment before coating; and ultrasonic treatment was not performed simultaneously during coating.

[0168] Comparative Example 1

[0169] The structure of the perovskite solar cell in this comparative example is the same as that in Example 1, and its preparation method is the same as that in Example 1. The difference from Example 1 is:

[0170] In step S2, the obtained coating solution was not subjected to ultrasonic pretreatment before coating; and ultrasonic treatment was not performed simultaneously during coating.

[0171] In step S3, the obtained perovskite precursor solution was not subjected to ultrasonic pretreatment before coating; and ultrasonic treatment was not performed simultaneously during coating.

[0172] Comparative Example 2

[0173] The structure of the perovskite solar cell in this comparative example is the same as that in Example 1, and its preparation method is the same as that in Example 1. The difference from Example 1 is:

[0174] In step S2, ultrasonic treatment was not performed simultaneously during the coating process.

[0175] In step S3, ultrasonic treatment was not performed simultaneously during the coating process.

[0176] Comparative Example 3

[0177] The structure of the perovskite solar cell in this comparative example is the same as that in Example 1, and its preparation method is the same as that in Example 1. The difference from Example 1 is:

[0178] In step S2, the obtained coating solution was not subjected to ultrasonic pretreatment before coating.

[0179] In step S3, the obtained perovskite precursor solution was not subjected to ultrasonic pretreatment before coating.

[0180] Test Example 1

[0181] This experimental example examines the performance of the perovskite solar cells prepared in the embodiments and comparative examples of the present invention.

[0182] Testing method: Using a solar simulator, the photoelectric conversion efficiency of the battery was tested under one standard sunlight intensity. The test area was 1 cm². 2 The test voltage range is 1.2 to -0.2V.

[0183] The test results are shown in Table 1:

[0184] Table 1. Performance test results of perovskite solar cells in the examples and comparative examples.

[0185] Performance testing results of perovskite solar cells revealed that dynamic treatment during the coating process maintains good dispersion of hole transport layer molecules and / or perovskite precursor molecules before film formation. This ensures uniform solute dispersion in the coating solution, prevents SAM agglomeration, improves coating uniformity, and guarantees uniform SAM anchoring on the substrate. The resulting perovskite film exhibits better crystallinity and reduces defects at the perovskite film interface, thus significantly improving the photoelectric performance of the perovskite solar cell. Compared to Comparative Examples 1-3, the perovskite solar cells with dynamic treatment show significantly improved on-state voltage and fill factor, further demonstrating better SAM anchoring uniformity on the substrate and improved perovskite crystallinity.

[0186] The technical solution of the present invention has been described above with reference to the preferred embodiments shown in the accompanying drawings. However, it will be readily understood by those skilled in the art that the scope of protection of the present invention is obviously not limited to these specific embodiments. Without departing from the principles of the present invention, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after such changes or substitutions will all fall within the scope of protection of the present invention.

Claims

1. A method for preparing a functional layer of a perovskite solar cell, characterized in that, The preparation method includes: preparing the functional layer using a slit coating method; the functional layer is at least one of a hole transport layer and a perovskite light absorption layer, wherein dynamic processing is implemented throughout the coating process; The dynamic processing includes: (a) Before coating, the coating solution is subjected to at least one of the following: heating pretreatment and ultrasonic pretreatment; (b) During coating, at least one of solution heating, ultrasonic treatment, and substrate heating is performed simultaneously.

2. The preparation method according to claim 1, characterized in that, In the aforementioned heating pretreatment, the heating temperature is 30-100℃; And / or, in the ultrasonic pretreatment, the ultrasonic frequency is ≥20KHz and the ultrasonic pretreatment time is 10-20min.

3. The preparation method according to claim 2, characterized in that, In the aforementioned heating pretreatment, the heating temperature is 40-60℃; And / or, in the ultrasonic pretreatment, the ultrasonic frequency is 20-100KHz.

4. The preparation method according to claim 3, characterized in that, The heating temperature of the solution is 30-100℃; And / or, the ultrasonic frequency of the ultrasonic treatment is ≥20KHz; And / or, the heating temperature of the substrate is 50-150°C.

5. The preparation method according to claim 4, characterized in that, The heating temperature of the solution is 40-60℃; And / or, the ultrasonic frequency of the ultrasonic treatment is 20-100KHz; And / or, the heating temperature of the substrate is 80-120°C.

6. The preparation method according to any one of claims 1-5, characterized in that, When preparing the hole transport layer, the coating solution is a coating solution containing SAM.

7. The preparation method according to claim 6, characterized in that, The concentration of SAM in the coating solution is 0.5-1 mg / mL.

8. The preparation method according to claim 7, characterized in that, The SAM is a self-assembled monolayer material containing phosphonic acid, carboxylic acid, or thiol anchoring groups.

9. The preparation method according to claim 8, characterized in that, The SAM is selected from [2-(9H-carbazole-9-yl)ethyl]phosphonic acid, (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl)phosphonic acid, (4-(3,6-dimethyl-9H-carbazole-9-yl)ethyl)phosphonic acid, (2-(4-(bis(4-methoxyphenyl)amino)phenyl)-1-cyanotitanyl)phosphonic acid or (4-(2,7-dibromo-9,9-dimethylacridin-10(9H)yl)butyl)phosphonic acid.

10. A perovskite solar cell, characterized in that, The perovskite solar cell includes: First electrode (100); Hole transport layer (200); Perovskite light-absorbing layer (300); Electron transport layer (500); Second electrode (700); The hole transport layer (200) is prepared by the preparation method according to any one of claims 1-9; And / or, the perovskite light-absorbing layer (300) is prepared by the preparation method according to any one of claims 1-9.

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