Medium and far infrared band laser semiconductor integrated emission and detection sensor

Abstract

The invention is suitable for the technical field of laser, and provides a sensor for middle and far infrared band laser semiconductor integrated emission and detection, which comprises a heat dissipation sealing cover and an adjusting mounting seat, the heat dissipation sealing cover is detachably mounted on the sensor main body and is used for dissipating heat of the sensor main body; the adjusting mounting seat is mounted on the sensor main body; the adjusting mounting seat comprises an upper adjusting seat, a lower adjusting seat and a connecting column assembly, and the connecting column assembly is mounted between the upper adjusting seat and the lower adjusting seat; the upper adjusting base and the lower adjusting base are of the same structure, the lower adjusting base comprises a supporting disc, and a plurality of unit adsorption heads distributed in an annular array mode are fixed to the supporting disc. Adsorption is carried out through a plurality of unit adsorption heads at one position or a plurality of positions, so that the upper adjusting seat and the lower adjusting seat incline around the connecting column assembly to adjust the inclination angles of the sensor main body and the heat dissipation sealing cover; the sensor main body and the heat dissipation sealing cover are adjusted by using the adjusting mounting seat according to the actual mounting condition.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of laser technology, in particular to a sensor for integrated emission and detection of mid-infrared waveband laser semiconductor. BACKGROUND

[0002] Mid-infrared waveband laser semiconductor refers to a laser operating in the mid-infrared wavelength range, typically from 2.5 microns to 15 microns or beyond. Applications of mid-infrared laser semiconductor include: 1. Gas detection and spectral analysis, using specific wavelengths of mid-infrared lasers to detect the absorption characteristics of gas molecules, commonly used in environmental monitoring and industrial process control; 2. Medical and biotechnology, used in biomedical imaging and diagnosis to detect and analyze the vibrational and rotational spectra of biological molecules; 3. Communication, used in mid-infrared waveband optical communication systems, providing high bandwidth and low loss transmission.

[0003] In the mid-infrared waveband, integrated emission and detection of laser semiconductor devices have important application prospects. Integrated emission and detection systems can provide more compact, reliable and efficient solutions, especially in the fields of gas sensing, biomedical, environmental monitoring and communication.

[0004] Mid-infrared waveband laser semiconductor sensors have unique technical requirements for the integration of the emission end (laser) and the receiving end (detector). With the advancement of material science and manufacturing technology, the performance and reliability of mid-infrared waveband laser semiconductor sensors will continue to improve. The development of integration and miniaturization will promote the widespread application of these sensors in more fields, such as health monitoring in smartphones, environmental perception in wearable devices and remote sensing systems in drones. Through continuous technological innovation, mid-infrared waveband laser semiconductor sensors will play a greater role in future intelligent sensing and high-precision detection.

[0005] However, existing mid-infrared waveband laser semiconductor integrated sensors have low flexibility in adjusting to actual conditions during emission and detection after installation, especially for ideal pump sources of mid-infrared optical parametric oscillation lasers, which have serious thermal depolarization, all of which will affect the low flexibility of the sensors after installation. SUMMARY

[0006] The purpose of the embodiment of the present application is to provide a sensor for integrated emission and detection of mid-infrared waveband laser semiconductor, aiming to solve the problem of low flexibility of existing mid-infrared waveband laser semiconductor integrated sensors in adjusting to actual conditions during emission and detection after installation, especially for ideal pump sources of mid-infrared optical parametric oscillation lasers, which have serious thermal depolarization, all of which will affect the low flexibility of the sensors after installation.

[0007] Specifically, a sensor for middle and far infrared waveband laser semiconductor integrated emission and detection, comprising a sensor main body, a heat dissipation sealing cover and an adjusting mounting base; the heat dissipation sealing cover is detachably mounted on the sensor main body for heat dissipation of the sensor main body; the adjusting mounting base is mounted on the sensor main body away from the heat dissipation sealing cover for adjustment according to actual installation conditions; the sensor main body is heat dissipated through the heat dissipation sealing cover to cope with the ideal pump source of middle and far infrared light parametric oscillation laser and the more serious heat-induced depolarization; the adjusting mounting base is used to adjust the sensor main body and the heat dissipation sealing cover according to actual installation conditions in actual situations during the emission and detection process. The adjusting mounting base comprises an upper adjusting base, a lower adjusting base and a connecting column assembly; the upper adjusting base is mounted at the bottom of the sensor main body, and the connecting column assembly is mounted between the upper adjusting base and the lower adjusting base; the upper adjusting base and the lower adjusting base have the same structure, and the lower adjusting base comprises a support disc with a plurality of unit adsorption heads arranged in a ring array fixed thereon; the upper adjusting base and the lower adjusting base are tilted around the connecting column assembly to adjust the inclination angle of the sensor main body and the heat dissipation sealing cover through adsorption by one or more unit adsorption heads; the upper adjusting base and the lower adjusting base are tilted around the connecting column assembly to adjust the inclination angle of the sensor main body and the heat dissipation sealing cover through adsorption by one or more unit adsorption heads in actual situations during the emission and detection process; and the adjusting mounting base is used to adjust the sensor main body and the heat dissipation sealing cover according to actual installation conditions.

[0008] The technical scheme of the present application is further described as follows: In one embodiment, the unit adsorption head comprises a positioning disc integrally fixed on the support disc; the positioning disc is ball-jointed with a joint ball A, and the joint ball A is fixed with a magnetic adsorption disc.

[0009] Further, the support disc is provided with a mounting frame matched with the connecting column assembly, and the connecting column assembly is fixed on the mounting frame.

[0010] Further, the magnetic adsorption disc is provided with a plurality of electromagnetic coils.

[0011] In one embodiment, the connecting column assembly comprises a joint base fixed on the lower adjusting base, a joint ball B ball-jointed on the joint base, and a connecting column fixed on the joint ball B and fixed on the upper adjusting base.

[0012] In one embodiment, the sensor main body is provided with a socket panel at the side edge thereof, and a connecting seat is arranged at the end of the sensor main body.

[0013] Further, the heat dissipation sealing cover is detachably mounted on the sensor body through a plurality of bolts; a cooling block is mounted on the heat dissipation sealing cover, and a plurality of cooling pipes are arranged in the cooling block and are distributed at equal intervals.

[0014] Further, a side cavity is formed in the sensor body and matches the cooling block, and the side cavity is used for placing the cooling block; a body cavity is formed in the sensor body and matches the side edge of the side cavity; and the side cavity and the body cavity are communicated.

[0015] Further, a filter panel is mounted on the heat dissipation sealing cover and matches the cooling block, and the filter panel is assembled at the air inlet ports of the plurality of cooling pipes.

[0016] Further, an air guide channel is arranged on the cooling pipe, a plurality of volume compression rings arranged in an array are arranged in the air guide channel, and a truncated cone-shaped volume compression cavity is arranged in the volume compression ring. When air passes through the filter panel on the heat dissipation sealing cover, enters the plurality of cooling pipes, and sequentially passes through the volume compression rings and the volume compression cavities on the volume compression rings, the volume of the air is compressed by using the volume compression cavities to achieve cooling, so that the sensor body is cooled through the heat dissipation sealing cover, so as to cope with the case that the middle and far infrared light parametric oscillation laser is a relatively ideal pump source and thermal depolarization is relatively serious.

[0017] Compared with the prior art, the sensor for middle and far infrared waveband laser semiconductor integrated emission and detection in the application can achieve the following effects: The sensor body is cooled through the heat dissipation sealing cover, so as to cope with the case that the middle and far infrared light parametric oscillation laser is a relatively ideal pump source and thermal depolarization is relatively serious; in the actual situation during the emission and detection process, a plurality of unit adsorption heads at one place or a plurality of unit adsorption heads at multiple places are used for adsorption, the upper adjusting seat and the lower adjusting seat are adjusted to tilt around the connecting column assembly to adjust the tilt angle of the sensor body and the heat dissipation sealing cover, and the sensor body and the heat dissipation sealing cover are adjusted according to the actual installation condition by using the adjusting mounting seat. When air passes through the filter panel on the heat dissipation sealing cover, enters the plurality of cooling pipes, and sequentially passes through the volume compression rings and the volume compression cavities on the volume compression rings, the volume of the air is compressed by using the volume compression cavities to achieve cooling, so that the sensor body is cooled through the heat dissipation sealing cover, so as to cope with the case that the middle and far infrared light parametric oscillation laser is a relatively ideal pump source and thermal depolarization is relatively serious. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 FIG. 1 is a structural schematic view of a sensor for middle and far infrared waveband laser semiconductor integrated emission and detection in an embodiment of the application; Figure 2 FIG. 2 is an assembly structural schematic view of a sensor body and a heat dissipation sealing cover in an embodiment of the application. Figure 3 Structure diagram of sensor body in an embodiment of the present application; Figure 4 Structure diagram of heat dissipation sealing cover in an embodiment of the present application; Figure 5 Structure diagram of cooling pipe in an embodiment of the present application; Figure 6 Structure diagram of volume compression ring in an embodiment of the present application; Figure 7 Structure diagram of cross section of volume compression ring in an embodiment of the present application; Figure 8 Structure diagram of adjusting mounting seat in an embodiment of the present application; Figure 9 Assembly structure diagram of lower adjusting seat and connecting column assembly in an embodiment of the present application; Figure 10 Structure diagram of lower adjusting seat in an embodiment of the present application; Figure 11 Structure diagram of unit adsorption head in an embodiment of the present application; Figure 12 Structure diagram of connecting column assembly in an embodiment of the present application.

[0019] In the figure marks: 100, sensor body; 110, socket panel, 120, connecting seat, 130, body cavity, 140, side cavity; 200, heat dissipation sealing cover; 210, filter panel, 220, cooling block, 230, cooling pipe, 240, air guide channel, 250, volume compression ring, 260, volume compression cavity; 300, adjusting mounting seat; 310, upper adjusting seat, 320, lower adjusting seat, 330, connecting column assembly; 321, mounting frame, 322, unit adsorption head (3221, magnetic adsorption disc, 3222, hinged ball A, 3223, positioning disc); 331, connecting column, 332, hinged ball B, 333, hinged base. DETAILED DESCRIPTION

[0020] In order to make the purpose, technical scheme and advantages of the present application more clear, the present application is further described in detail below in combination with the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application, and are not used to limit the present application. The specific implementation of the present application is described in detail below in combination with specific embodiments.

[0021] In the embodiments of the present application, as shown in Figure 1 ,2 , 8-11 are shown: a mid-infrared waveband laser semiconductor integrated sensor for emission and detection, comprising: Sensor body 100; Heat dissipation sealing cover 200, detachably mounted on the sensor body 100, for heat dissipation for the sensor body 100; Adjusting mounting seat 300, mounted on the sensor body 100 away from the heat dissipation sealing cover 200 side, for adjustment according to the actual installation situation; It should be noted that: the sensor except the sensor body 100, heat dissipation sealing cover 200 and adjusting mounting seat 300 and the components not described in the prior art, its detailed structure can be known in the existing literature periodical, at the same time can be directly purchased on the market, or can be purchased on the market parts to constitute and so on; it is not the invention to protect, here is not described in detail, also not in the drawing; Further, the above-mentioned situation can be known: the sensor body 100 through the heat dissipation sealing cover 200, heat dissipation, in order to deal with the ideal pump source of mid-infrared optical parametric oscillation laser, heat induced depolarization is more serious; in the actual situation for the emission and detection process, the adjusting mounting seat 300 is used to adjust the sensor body 100 and the heat dissipation sealing cover 200 according to the actual installation situation; Among them, the adjusting mounting seat 300 includes upper adjusting seat 310, lower adjusting seat 320 and connecting column assembly 330, the upper adjusting seat 310 is installed at the bottom of the sensor body 100, the connecting column assembly 330 is installed between the upper adjusting seat 310 and the lower adjusting seat 320; the upper adjusting seat 310 and the lower adjusting seat 320 adopt the same structure, the lower adjusting seat 320 includes a support disc, a plurality of unit adsorption heads 322 are fixed on the support disc in the form of annular array; Through a plurality of or multiple unit adsorption heads 322, the upper adjusting seat 310 and the lower adjusting seat 320 are adjusted around the connecting column assembly 330 to adjust the inclination angle of the sensor body 100 and the heat dissipation sealing cover 200; Further, the above-mentioned situation can be known: the sensor body 100 through the heat dissipation sealing cover 200, heat dissipation, in order to deal with the ideal pump source of mid-infrared optical parametric oscillation laser, heat induced depolarization is more serious; in the actual situation for the emission and detection process, the adjusting mounting seat 300 is used to adjust the sensor body 100 and the heat dissipation sealing cover 200 according to the actual installation situation;

[0022] In the embodiment of the present application, as shown in Figure 10 and Figure 11 The unit adsorption head 322 comprises a positioning disc 3223 fixedly integrated on the supporting disc; the positioning disc 3223 is ball-jointed with a joint ball A 3222, and the joint ball A 3222 is fixed with a magnetic adsorption disc 3221.

[0023] In the embodiment of the present application, as shown in Figure 9 and Figure 10 The supporting disc is provided with a mounting frame 321 matched with a connecting column assembly 330, and the connecting column assembly 330 is fixed on the mounting frame 321.

[0024] In the embodiment of the present application, as shown in Figure 11 The magnetic adsorption disc 3221 is provided with a plurality of electromagnetic coils.

[0025] It should be noted that the electromagnetic coil and the energization wiring mode of the electromagnetic coil are prior art, and the detailed structure can be known from existing literature periodicals, and can also be directly purchased on the market, or the components can be purchased on the market to be composed, etc.; it is not the protection of the present application, and is not described in detail here, nor is it drawn in the attached drawings.

[0026] In the embodiment of the present application, as shown in Figure 9 and Figure 12 The connecting column assembly 330 comprises a joint base 333 fixedly inserted on the lower adjusting seat 320, the joint base 333 is ball-jointed with a joint ball B 332, the joint ball B 332 is fixed with a connecting column 331, and the connecting column 331 is fixed on the upper adjusting seat 310.

[0027] In the embodiment of the present application, as shown in Figure 3 The sensor body 100 is provided with a socket panel 110 on the side; a connecting seat 120 is arranged at the end of the sensor body 100.

[0028] In the embodiment of the present application, as shown in Figures 2-4 The heat dissipation sealing cover 200 is detachably mounted on the sensor body 100 through a plurality of bolts; the heat dissipation sealing cover 200 is provided with a cooling block 220, a plurality of cooling pipes 230 are inserted on the cooling block 220, and the plurality of cooling pipes 230 are distributed at equal intervals.

[0029] In the embodiment of the present application, as shown in Figure 3 The sensor body 100 is provided with a side cavity 140 matched with the cooling block 220, the side cavity 140 is used for placing the cooling block 220, a main body cavity 130 is arranged on the side of the sensor body 100, and the side cavity 140 and the main body cavity 130 are communicated.

[0030] In the embodiment of the present application, as shown in Figure 3 and Figure 4 As shown: the heat dissipation sealing cover 200 is provided with a filter panel 210 on the matching cooling block 220, and the filter panel 210 is assembled at the air inlet port of the plurality of cooling pipes 230.

[0031] In the embodiment of the present application, as shown in Figure 3 As shown: the cooling pipe 230 is provided with an air guide channel 240, and the air guide channel 240 is internally provided with a plurality of volume compression rings 250 arranged in an array, and the volume compression ring 250 is internally provided with a volume compression cavity 260 in the shape of a circular truncated cone.

[0032] Further, it can be known from the above-mentioned situation that: when the air passes through the filter panel 210 on the heat dissipation sealing cover 200, enters the inside of the plurality of cooling pipes 230, and successively passes through the volume compression ring 250 and the volume compression cavity 260 on the volume compression ring 250, the volume of the air is compressed by the volume compression cavity 260 for cooling, so that the sensor main body 100 is cooled through the heat dissipation sealing cover 200, so as to cope with the case that the middle and far infrared light parametric oscillation laser is a more ideal pump source and the thermal depolarization is more serious.

[0033] The existing middle and far infrared waveband laser semiconductor integrated sensor has low flexibility in adjustment according to actual conditions during emission and detection after installation, especially when the middle and far infrared light parametric oscillation laser is a more ideal pump source and the thermal depolarization is more serious, which will affect the problem of the sensor with low flexibility after installation; the sensor for emission and detection in the present application can achieve: The sensor main body 100 is cooled through the heat dissipation sealing cover 200, so as to cope with the case that the middle and far infrared light parametric oscillation laser is a more ideal pump source and the thermal depolarization is more serious; when the actual conditions during emission and detection are adjusted, a plurality of unit adsorption heads 322 at one place or a plurality of unit adsorption heads 322 at multiple places are used for adsorption, so as to complete the tilting adjustment of the sensor main body 100 and the heat dissipation sealing cover 200 around the connecting column assembly 330 by the upper adjusting seat 310 and the lower adjusting seat 320; and the adjusting mounting seat 300 is used to adjust the sensor main body 100 and the heat dissipation sealing cover 200 according to the actual installation conditions.

[0034] When the air passes through the filter panel 210 on the heat dissipation sealing cover 200, enters the inside of the plurality of cooling pipes 230, and successively passes through the volume compression ring 250 and the volume compression cavity 260 on the volume compression ring 250, the volume of the air is compressed by the volume compression cavity 260 for cooling, so that the sensor main body 100 is cooled through the heat dissipation sealing cover 200, so as to cope with the case that the middle and far infrared light parametric oscillation laser is a more ideal pump source and the thermal depolarization is more serious.

[0035] The structures, proportions, sizes, etc. shown in the present specification are merely used to cooperate with the content disclosed in the present specification for understanding and reading by those skilled in the art, and are not used to limit the defined conditions under which the present application can be implemented, and therefore do not have technical substantive significance. Any modification of the structure, change of the proportional relationship, or adjustment of the size, without affecting the effects that can be produced by the present application and the purposes that can be achieved, should still fall within the scope of the technical content disclosed by the present application. In the description of the present application, unless otherwise specified, the meaning of "a plurality of" is two or more.

[0036] In the description of the present application, although embodiments of the present application have been shown and described, it can be understood by those skilled in the art that various changes, modifications, replacements and variations can be made to these embodiments without departing from the principles and spirits of the present application, and the scope of the present application is defined by the appended claims and their equivalents.

[0037] Finally, it should be noted that: the above only describes the preferred embodiments of the present application, and is not used to limit the present application, although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part of the technical features, any modification, equivalent replacement, improvement, etc. within the spirits and principles of the present application should be included in the protection scope of the present application.

Claims

1. A sensor for mid- and far-infrared band laser semiconductor integrated emission and detection, characterized in that, include: Sensor body (100); A heat dissipation sealing cover (200) is detachably mounted on the sensor body (100) for heat dissipation of the sensor body (100); An adjustable mounting base (300) is installed on the sensor body (100) on the side away from the heat dissipation sealing cover (200) for adjustment according to the actual installation situation; The adjustment mounting base (300) includes an upper adjustment base (310), a lower adjustment base (320), and a connecting column assembly (330). The upper adjustment base (310) is installed at the bottom of the sensor body (100), and the connecting column assembly (330) is installed between the upper adjustment base (310) and the lower adjustment base (320). The upper adjustment base (310) and the lower adjustment base (320) adopt the same structure. The lower adjustment base (320) includes a support plate, on which multiple unit adsorption heads (322) are fixed in a ring array. Adsorption is performed by one or more unit adsorption heads (322) in one place, and the upper adjustment seat (310) and lower adjustment seat (320) are tilted around the connecting column assembly (330) to adjust the tilt angle of the sensor body (100) and the heat dissipation sealing cover (200).

2. The sensor for mid- and far-infrared band laser semiconductor integrated emission and detection according to claim 1, characterized in that, The unit adsorption head (322) includes a positioning disk (3223), which is integrally fixed on the support disk; a hinge ball A (3222) is hinged on the positioning disk (3223), and a magnetic adsorption disk (3221) is fixed on the hinge ball A (3222).

3. The sensor for mid- and far-infrared band laser semiconductor integrated emission and detection according to claim 2, characterized in that, The support plate is provided with a mounting frame (321) for the connecting column assembly (330), and the connecting column assembly (330) is fixed on the mounting frame (321).

4. A sensor for mid- and far-infrared band laser semiconductor integrated emission and detection according to claim 2, characterized in that, Multiple electromagnetic coils are laid on the magnetic adsorption disk (3221).

5. A sensor for mid-to-far infrared band laser semiconductor integrated emission and detection according to claim 1, 2, or 3, characterized in that, The connecting column assembly (330) includes a hinge base (333), which is inserted and fixed on the lower adjusting seat (320). A hinge ball B (332) is ball-hinged on the hinge base (333), and a connecting column (331) is fixed on the hinge ball B (332). The connecting column (331) is fixed on the upper adjusting seat (310).

6. A sensor for mid-to-far infrared band laser semiconductor integrated emission and detection according to claim 1, 2, or 3, characterized in that, The sensor body (100) has a socket panel (110) installed on its side; a connector (120) is provided at the end of the sensor body (100).

7. A sensor for mid- and far-infrared band laser semiconductor integrated emission and detection according to claim 6, characterized in that, The heat dissipation sealing cover (200) is detachably mounted on the sensor body (100) by multiple bolts; a cooling block (220) is installed on the heat dissipation sealing cover (200), and multiple cooling tubes (230) are interspersed on the cooling block (220) and the multiple cooling tubes (230) are distributed at equal intervals.

8. A sensor for mid- and far-infrared band laser semiconductor integrated emission and detection according to claim 7, characterized in that, The sensor body (100) is provided with a side cavity (140) in conjunction with the cooling block (220). The side cavity (140) is used to place the cooling block (220). The sensor body (100) on the side of the side cavity (140) is provided with a main cavity (130). The side cavity (140) and the main cavity (130) are connected.

9. A sensor for mid- and far-infrared band laser semiconductor integrated emission and detection according to claim 7, characterized in that, A filter panel (210) is installed on the heat dissipation sealing cover (200) in conjunction with the cooling block (220). The filter panel (210) is assembled at the air inlet of multiple cooling tubes (230).

10. A sensor for mid- and far-infrared band laser semiconductor integrated emission and detection according to claim 7, characterized in that, The cooling pipe (230) is provided with an air guide channel (240), and multiple volume compression rings (250) arranged in an array are provided inside the air guide channel (240). The volume compression rings (250) are provided with a frustum-shaped volume compression cavity (260).

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