Display device and electronic device including the same

Abstract

The invention relates to a display device and an electronic device including the same. The display device includes: a substrate; a first organic light emitting diode disposed on the substrate; a first capping layer disposed on the first organic light emitting diode and having a first refractive index; a second capping layer disposed on the first capping layer and having a second refractive index less than the first refractive index; and a first-1 inorganic encapsulation layer disposed on the second capping layer and having a third refractive index greater than the second refractive index.

Description

[0001] Cross Reference to Related Applications

[0002] This application claims priority to Korean Patent Application No. 10-2024-0080586, filed on June 20, 2024, and all benefits accruing therefrom, the contents of which are incorporated herein in their entirety by reference. TECHNICAL FIELD

[0003] One or more embodiments relate to a display device and an electronic device including the same. BACKGROUND

[0004] A display device can visually display data. The display device can provide an image using a light emitting diode. The use of the display device is becoming diversified, and various designs are attempted to improve the quality of the display device. SUMMARY

[0005] One or more embodiments include a display device and an electronic device including the same.

[0006] Additional aspects will be set forth in part in the description which follows, and in part will become apparent to those skilled in the art upon examination of the following description and the accompanying drawings or can be learned by practice of the presented embodiments of the disclosure.

[0007] According to one or more embodiments, the display device includes a substrate, a first organic light emitting diode disposed on the substrate, a first capping layer disposed on the first organic light emitting diode and having a first refractive index, a second capping layer disposed on the first capping layer and having a second refractive index less than the first refractive index, and a first-1 inorganic encapsulation layer disposed on the second capping layer and having a third refractive index greater than the second refractive index.

[0008] According to one or more embodiments, the third refractive index of the first-1 inorganic encapsulation layer can be about 1.79 to about 1.99.

[0009] According to one or more embodiments, a thickness of the first capping layer can be about 100 angstroms to about

[0010] According to one or more embodiments, a thickness of the second capping layer can be about to about

[0011] According to one or more embodiments, a thickness of the first-1 inorganic encapsulation layer can be about to about

[0012] According to one or more embodiments, the display device can further include a first-2 inorganic encapsulation layer disposed on the first-1 inorganic encapsulation layer and having a fourth refractive index less than the third refractive index.

[0013] According to one or more embodiments, the fourth refractive index of the first-2 inorganic encapsulation layer can be about 1.6 to about 1.8.

[0014] According to one or more embodiments, the thickness of the first-2 inorganic encapsulation layer can be about to about

[0015] According to one or more embodiments, the first-2 inorganic encapsulation layer can include a lower layer and an upper layer, the refractive index of the lower layer can be about 1.67 to about 1.87, and the refractive index of the upper layer can be about 1.52 to about 1.72.

[0016] According to one or more embodiments, the thickness of each of the lower layer and the upper layer can be about to about

[0017] According to one or more embodiments, the display device can further include a first-3 inorganic encapsulation layer disposed on the first-2 inorganic encapsulation layer and having a fifth refractive index less than the fourth refractive index.

[0018] According to one or more embodiments, the display device can further include a third cap layer disposed below the first cap layer and having a sixth refractive index less than the second refractive index.

[0019] According to one or more embodiments, the thickness of the third cap layer of the display device can be about to about

[0020] According to one or more embodiments, an electronic device includes a display device; and a power supply configured to provide power to the display device. The display device includes a substrate; a first organic light emitting diode, a second organic light emitting diode, and a third organic light emitting diode disposed on the substrate; a first-1 cap layer disposed on the first organic light emitting diode; a first-2 cap layer disposed on the second organic light emitting diode; a first-3 cap layer disposed on the third organic light emitting diode; a second-1 cap layer disposed on the first-1 cap layer and having a refractive index less than a refractive index of the first-1 cap layer; a second-2 cap layer disposed on the first-2 cap layer and having a refractive index less than a refractive index of the first-2 cap layer; and a second-3 cap layer disposed on the first-3 cap layer and having a refractive index less than a refractive index of the first-3 cap layer, wherein a thickness of the first-1 cap layer and a thickness of the first-3 cap layer are different from each other.

[0021] According to one or more embodiments, the first organic light emitting diode, the second organic light emitting diode, and the third organic light emitting diode can emit light of different colors from each other.

[0022] According to one or more embodiments, the thickness of the second-1 capping layer and the thickness of the second-3 capping layer can be different from each other.

[0023] According to one or more embodiments, the thickness of each of the first-1 capping layer, the first-2 capping layer, the first-3 capping layer, the second-1 capping layer, the second-2 capping layer, and the second-3 capping layer can be about to about

[0024] According to one or more embodiments, the electronic device can further include a first-1 inorganic encapsulation layer disposed on the second-1 capping layer, the second-2 capping layer, and the second-3 capping layer and having a refractive index greater than the refractive index of each of the second-1 capping layer, the second-2 capping layer, and the second-3 capping layer.

[0025] According to one or more embodiments, the refractive index of the first-1 inorganic encapsulation layer can be about 1.79 to about 1.99.

[0026] According to one or more embodiments, the thickness of the first-1 inorganic encapsulation layer can be about to about BRIEF DESCRIPTION OF DRAWINGS

[0028] The above and other aspects, features, and advantages of certain implementations of the present disclosure will be more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0029] Figure 1 A perspective view schematically illustrating a display device according to an embodiment is illustrated;

[0030] Figure 2 An equivalent circuit diagram schematically illustrating a sub-pixel included in a display device according to an embodiment is illustrated;

[0031] Figure 3 A cross-sectional view schematically illustrating a display area of a display panel of a display device is illustrated;

[0032] Figures 4 to 7 A schematic cross-sectional view of a portion of a display panel according to some embodiments is illustrated;

[0033] Figures 8 to 10 Simulation results of luminous efficiency and WAD trajectory according to an embodiment are schematically illustrated; and

[0034] Figure 11 A block diagram of an electronic device according to an embodiment is illustrated to explain. DETAILED DESCRIPTION

[0035] Reference will now be made in detail embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. It shall be understood that the embodiments can be directed to various modifications as are gleaned from the description to follow. Accordingly, the following merely represents examples of implementations, which, if taken in conjunction with the remainder of the description, can provide a fuller understanding of the described description. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Throughout this disclosure, the expression "at least one of a, b, and c" indicates only a, only b, only c, both a and b, both a and c, both b and c, or all of a, b, and c, or variations thereof.

[0036] Because the present disclosure can have various modified embodiments, the embodiments are illustrated in the drawings and described in detail in the detailed description. When the embodiments are described with reference to the drawings, the effects and characteristics of the present disclosure and methods of achieving the same will be apparent. However, the present disclosure can be embodied in many different forms, and should not be construed as being limited to the embodiments set forth in this document.

[0037] One or more embodiments will be described in greater detail below with reference to the accompanying drawings. Regardless of the figure number, those elements that are the same or correspond to one another will be given the same reference numeral, and a repetitive description thereof will be omitted.

[0038] It will be understood that, although the terms such as "first", "second", "first-1", "first-2", "first-3", "second-1", "second-2", "second-3", and the like can be used in this document to describe various elements, the elements should not be limited by these terms, and the terms are used only to distinguish one element from another.

[0039] As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0040] Also, it will be understood that the terms "comprise", "include" and "have", as used herein, indicate the presence of the stated feature or element but do not preclude the presence or addition of one or more other features or elements.

[0041] It will be understood that when a layer, region or element is referred to as being "on" another layer, region or element, it can be "directly on" the other layer, region or element or intervening layers, regions or elements can also be present.

[0042] In the drawings, the size of elements, including the thicknesses of layers, lines and regions shown in the drawings can be exaggerated for clarity and descriptive purposes and are not necessarily drawn to scale. In other words, the thicknesses of the layers, regions, lines, or elements shown in the drawings can be determined to be thicker or thinner in reality than what is shown in the drawings.

[0043] When a certain embodiment can be implemented differently, a specific process sequence can be performed differently from the described sequence. For example, two consecutively described processes can be performed at substantially the same time or in reverse order to the described sequence.

[0044] As used herein, "about" or "substantially" includes the recited value and means within an acceptable range of deviation for a particular value determined by one of ordinary skill in the art considering measurement of the value in question and the error in measuring the particular quantity (i.e., limitations in the measurement system). For example, "about" can mean within one or more standard deviations of the recited value, or within ±10%, ±5%, or ±2% of the recited value.

[0045] In the following embodiments, it will be understood that when an element, region or layer is referred to as being "connected to" or "coupled to" another element, region or layer, it can be directly connected or coupled to the other element, region or layer or intervening elements, regions, or layers can be connected or coupled between the element, region or layer and the other element, region or layer. For example, when a layer, region or element etc. is electrically connected to another layer, region or element etc., the layer, region or element etc. can be directly electrically connected to the other layer, region or element etc. and / or can be indirectly electrically connected to the other layer, region or element etc. with intervening layers, regions or elements etc. between the layer, region or element etc. and the other layer, region or element etc.

[0046] In the following examples, the x-axis, y-axis and z-axis are not limited to three axes of a rectangular coordinate system, and can be interpreted in a broader sense. For example, the x-axis, y-axis and z-axis can be perpendicular to each other, or can represent different directions that are not perpendicular to each other.

[0047] Figure 1 A perspective view of a display device according to an embodiment is schematically illustrated.

[0048] The display device 1 according to embodiments can display moving images or still images, and can be used as a display of various electronic devices such as portable electronic devices (e.g., mobile phones, smart phones, tablet personal computers ("PCs"), mobile communication devices, electronic organizers, electronic books, portable multimedia players ("PMPs"), navigation devices, and ultra-mobile personal computers ("UMPCs")), as well as televisions, notebook computers, monitors, billboards, and Internet of Things ("IoT") devices. In addition, the display device 1 according to embodiments can be used in wearable devices (e.g., smart watches, watch phones, glasses-type displays, and head-mounted displays ("HMDs")). Also, the display device 1 according to embodiments can be used as an instrument panel of a vehicle, a center information display ("CID") disposed in a center console or an instrument panel of a vehicle, an in-vehicle mirror display replacing a side mirror of a vehicle, a display for entertainment of a rear seat of a vehicle, and a display disposed on a rear surface of a front seat.

[0049] Reference Figure 1 The display device 1 can have edges each in a first direction and a second direction. The first direction and the second direction can intersect each other. For example, the first direction and the second direction can form an acute angle. In another embodiment, the first direction and the second direction can form an obtuse angle or a right angle. Hereinafter, a case in which the first direction and the second direction are perpendicular to each other will be mainly described. For example, the first direction can be an x direction or an -x direction, and the second direction can be a y direction or a -y direction. A third direction perpendicular to the first direction and the second direction can be a z direction or a -z direction.

[0050] The display device 1 can include a display area DA and a peripheral area PA outside the display area DA. The display device 1 can provide a certain image by using light emitted from a plurality of sub-pixels PX disposed in the display area DA. The peripheral area PA disposed outside the display area DA can be a non-display area in which sub-pixels PX are not disposed. The entire display area DA can be surrounded by the peripheral area PA.

[0051] Hereinafter, although an organic light emitting display device is described as the display device 1 according to embodiments, the display device 1 of the present disclosure is not limited thereto. In another embodiment, the display device 1 of the present disclosure can be an inorganic light emitting display (e.g., an inorganic electroluminescent display) or a quantum dot light emitting display. For example, an emission layer of a display element included in the display device 1 can include an organic material or an inorganic material. In addition, the display device 1 can include a quantum dot located on a path of light emitted from an emission layer.

[0052] Figure 2 An equivalent circuit diagram of a sub-pixel included in a display device according to an embodiment is schematically illustrated.

[0053] Reference Figure 2The subpixels P can each include a subpixel circuit PC and an organic light emitting diode OLED. The subpixel circuit PC can include a plurality of thin film transistors and at least one capacitor. In embodiments, the subpixel circuit PC can include a first thin film transistor T1, a second thin film transistor T2, a third thin film transistor T3, and a storage capacitor Cst.

[0054] Each of the first thin film transistor T1, the second thin film transistor T2, and the third thin film transistor T3 can be an oxide semiconductor thin film transistor including a semiconductor layer including an oxide semiconductor or a silicon semiconductor thin film transistor including a semiconductor layer including polysilicon. Each thin film transistor can include a first electrode and a second electrode, the first electrode can be one of a source electrode and a drain electrode, and the second electrode can be the other of the source electrode and the drain electrode, according to the type of the thin film transistor. In addition, each thin film transistor can include a gate electrode.

[0055] The first thin film transistor T1 can include a driving thin film transistor. The first electrode of the first thin film transistor T1 can be connected to a driving voltage line VDL configured to supply a driving power supply voltage ELVDD, and the second electrode of the first thin film transistor T1 can be connected to a pixel electrode of the organic light emitting diode OLED. The gate electrode of the first thin film transistor T1 can be connected to a first node N1. The first thin film transistor T1 can control an amount of current flowing from the driving voltage line VDL to the organic light emitting diode OLED in response to a voltage of the first node N1.

[0056] The second thin film transistor T2 can include a switching thin film transistor. The first electrode of the second thin film transistor T2 can be connected to a data line DL, and the second electrode of the second thin film transistor T2 can be connected to the first node N1. The gate electrode of the second thin film transistor T2 can be connected to a scan line SL. When a scan signal is supplied to the scan line SL, the second thin film transistor T2 can be turned on, thereby electrically connecting the data line DL to the first node N1.

[0057] The third thin film transistor T3 can include an initialization thin film transistor and / or a sensing thin film transistor. The first electrode of the third thin film transistor T3 can be connected to a second node N2, and the second electrode of the third thin film transistor T3 can be connected to an initialization voltage line INL. The gate electrode of the third thin film transistor T3 can be connected to the scan line SL.

[0058] When a scan signal is supplied to the scan line SL, the third thin film transistor T3 can be turned on, thereby electrically connecting the initialization voltage line INL to the second node N2. In some embodiments, the third thin film transistor T3 can be turned on according to a scan signal received through the scan line SL to initialize the pixel electrode of the organic light emitting diode OLED with an initialization voltage from the initialization voltage line INL.

[0059] In some embodiments, when a scan signal is supplied to the scan line SL and the characteristic information of the organic light emitting diode OLED is sensed, the third thin film transistor T3 can be turned on. The third thin film transistor T3 can include both an initialization thin film transistor function and a sensing thin film transistor function, or can include one of the two functions. The initialization operation and the sensing operation of the third thin film transistor T3 can be performed separately or simultaneously. If the third thin film transistor T3 includes the sensing thin film transistor function, the initialization voltage line INL can be referred to as a sensing line.

[0060] The storage capacitor Cst can be connected between the first node N1 and the second node N2. For example, a first capacitor plate of the storage capacitor Cst can be connected to the gate electrode of the first thin film transistor T1, and a second capacitor plate of the storage capacitor Cst can be connected to the pixel electrode of the organic light emitting diode OLED.

[0061] The counter electrode of the organic light emitting diode OLED can be connected to a common voltage line VSL configured to provide a common power voltage ELVSS.

[0062] Although Figure 2 Although it is explained that the sub-pixel circuit PC includes three thin film transistors and one storage capacitor, the present disclosure is not limited thereto. In some embodiments, the number of thin film transistors or the number of storage capacitors can be variously changed according to the design of the sub-pixel circuit PC.

[0063] Figure 3 A cross-sectional view of a display area of a display panel of a display device is schematically shown. In particular, Figure 3 A cross-sectional view of a display device taken along Figure 1 line I-I' is shown.

[0064] Referring to Figure 3 , the display panel 10 can include a substrate 100, a buffer layer 111, an inorganic insulating layer IIL, an organic insulating layer OIL, a sub-pixel circuit PC, a connection electrode CM, an organic light emitting diode OLED, a third organic insulating layer 118, a spacer 119, an encapsulation layer 300, and an input detection layer 400. That is, the substrate 100, the buffer layer 111, the inorganic insulating layer IIL, the organic insulating layer OIL, the sub-pixel circuit PC, the connection electrode CM, the organic light emitting diode OLED, the third organic insulating layer 118, the spacer 119, the encapsulation layer 300, and the input detection layer 400 can be disposed in the display area DA of the display panel 10.

[0065] The substrate 100 can include a first base layer 100a, a first separation layer 100b, a second base layer 100c, and a second separation layer 100d. In an embodiment, the first base layer 100a, the first separation layer 100b, the second base layer 100c, and the second separation layer 100d can be sequentially stacked in a thickness direction (z direction) of the substrate 100.

[0066] At least one of the first base layer 100a and the second base layer 100c can include a polymer resin such as polyether sulfone, polyarylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyimide, polycarbonate, cellulose triacetate, cellulose acetate propionate, or the like.

[0067] The first separation layer 100b and the second separation layer 100d can prevent penetration of external foreign substances, and can have a single-layer structure or a multi-layer structure including silicon nitride (SiN x ), silicon oxide (SiO2), and / or silicon oxynitride (SiO x N y ).

[0068] A buffer layer 111 can be disposed on the substrate 100. The buffer layer 111 can include an inorganic insulating material such as SiN x , SiO x N y , and SiO2, and can have a single-layer structure or a multi-layer structure including the above-described inorganic insulating material.

[0069] An inorganic insulating layer III can be disposed on the buffer layer 111. The inorganic insulating layer III can include a first inorganic insulating layer 112 and a second inorganic insulating layer 114. However, the disclosure is not limited thereto.

[0070] A sub-pixel circuit PC can be arranged in the display area DA. The sub-pixel circuit PC can include a thin film transistor TFT. The thin film transistor TFT can include a semiconductor layer Act, a gate electrode GE, a source electrode SE, and a drain electrode DE.

[0071] The semiconductor layer Act can be disposed on the buffer layer 111. The semiconductor layer Act can include polysilicon. Alternatively, the semiconductor layer Act can include amorphous silicon, an oxide semiconductor, or an organic semiconductor. The semiconductor layer Act can include a channel region and a drain region and a source region arranged on opposite sides of the channel region, respectively.

[0072] The gate electrode GE can be disposed on the semiconductor layer Act. The gate electrode GE can overlap the channel region. The gate electrode GE can include a low-resistance metal material. The gate electrode GE can include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or the like, and can have a single-layer structure or a multi-layer structure including the above-described conductive material.

[0073] The first inorganic insulating layer 112 can be disposed between the semiconductor layer Act and the gate electrode GE. The first inorganic insulating layer 112 can include an inorganic insulating material such as SiO2, SiN x , SiO x N y , aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (e.g., ZnO and / or ZnO2).

[0074] The second inorganic insulating layer 114 can be disposed on the gate electrode GE. The second inorganic insulating layer 114 can cover the gate electrode GE. The second inorganic insulating layer 114 can include an inorganic insulating material such as SiO2, SiN x , SiO x N y , Al2O3, TiO2, Ta2O5, HfO2, ZnO, and / or ZnO2.

[0075] The drain electrode DE and the source electrode SE can each be disposed on the second inorganic insulating layer 114. The drain electrode DE and the source electrode SE can each be connected to the semiconductor layer Act through a contact hole defined in the first inorganic insulating layer 112 and the second inorganic insulating layer 114. The drain electrode DE and the source electrode SE can include a material having high conductivity. The drain electrode DE and the source electrode SE can include a conductive material including Mo, Al, Cu, Ti, etc., and have a single-layer structure or a multi-layer structure including the above-described conductive material. For example, the drain electrode DE and the source electrode SE can have a multi-layer structure of Ti / Al / Ti.

[0076] The organic insulating layer OIL can be disposed on the inorganic insulating layer IIL. The organic insulating layer OIL can include a first organic insulating layer 115 and a second organic insulating layer 116. Figure 3 It is illustrated that the organic insulating layer OIL includes two organic insulating layers 115 and 116, but the present disclosure is not limited thereto. In another embodiment, the organic insulating layer OIL can include three or four organic insulating layers.

[0077] The first organic insulating layer 115 can cover the drain electrode DE and the source electrode SE. The first organic insulating layer 115 can include an organic insulating material such as a general-purpose polymer (e.g., polymethyl methacrylate ("PMMA") or polystyrene ("PS")), a polymer derivative having a phenolic group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine polymer, a p-xylene polymer, a vinyl alcohol polymer, and a blend thereof.

[0078] The connection electrode CM can be disposed on the first organic insulating layer 115. In this case, the connection electrode CM can be connected to the drain electrode DE or the source electrode SE through a contact hole of the first organic insulating layer 115. The connection electrode CM can include a material having good conductivity. The connection electrode CM can include a conductive material including Mo, Al, Cu, Ti, or the like, and can have a single layer structure or a multi-layer structure including the above-described conductive material. For example, the connection electrode CM can have a multi-layer structure of Ti / Al / Ti.

[0079] The second organic insulating layer 116 can be disposed on the connection electrode CM. The second organic insulating layer 116 can cover the connection electrode CM. The second organic insulating layer 116 can include the same or different material as that of the first organic insulating layer 115.

[0080] The light emitting diode can be disposed on the second organic insulating layer 116. For example, the organic light emitting diode OLED can be disposed on the second organic insulating layer 116. Alternatively, although not shown, an inorganic light emitting diode can be disposed on the second organic insulating layer 116.

[0081] The organic light emitting diode OLED can emit red light, green light, or blue light, or can emit red light, green light, blue light, or white light. The organic light emitting diode OLED can include a first electrode 211, an emission layer 212b, a functional layer 212f, and a second electrode 213. The first electrode 211 can be a pixel electrode (e.g., anode) of the organic light emitting diode OLED, and the second electrode 213 can be a counter electrode (e.g., cathode) of the organic light emitting diode OLED.

[0082] The first electrode 211 can be disposed on the second organic insulating layer 116. The first electrode 211 can be electrically connected to the connection electrode CM through a contact hole of the second organic insulating layer 116. The first electrode 211 can include a conductive oxide such as indium tin oxide ("ITO"), indium zinc oxide ("IZO"), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide ("IGO"), or aluminum zinc oxide ("AZO"). In an embodiment, the first electrode 211 can include a reflective layer including Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a compound thereof. In an embodiment, the first electrode 211 can further include a layer including ITO, IZO, ZnO, or In2O3 on / beneath the above-described reflective layer. For example, the first electrode 211 can have a multi-layer structure of ITO / Ag / ITO.

[0083] A third organic insulating layer 118, defining an opening that exposes at least a portion of the first electrode 211, may be disposed on the first electrode 211. The emission region of light emitted from the organic light-emitting diode (OLED) may be defined by the opening defined in the third organic insulating layer 118. For example, the width of the opening may correspond to the width of the emission region.

[0084] The third organic insulating layer 118 may include an organic insulating material. x SiO x N y (Or SiO2). Optionally, the third organic insulating layer 118 may include organic insulating materials and inorganic insulating materials. In an embodiment, the third organic insulating layer 118 may include a light-blocking material. The light-blocking material may include: a resin or paste comprising carbon black, carbon nanotubes, or black dye; metal particles (e.g., Ni, Al, Mo, and their alloys); metal oxide particles (e.g., chromium oxide); or metal nitride particles (e.g., chromium nitride). When the third organic insulating layer 118 includes a light-blocking material, external light reflected by the metal structure disposed beneath the third organic insulating layer 118 can be reduced.

[0085] Spacer 119 may be disposed on the third organic insulating layer 118. Spacer 119 may include an organic insulating material (e.g., polyimide). Optionally, spacer 119 may include an inorganic insulating material (e.g., SiN). x It may include organic insulating materials and inorganic insulating materials (or SiO2).

[0086] In one embodiment, the spacer 119 may comprise the same material as the third organic insulating layer 118. In this case, the third organic insulating layer 118 and the spacer 119 may be formed together using a masking process such as a halftone mask. Alternatively, the spacer 119 and the third organic insulating layer 118 may comprise different materials.

[0087] The emitting layer 212b may be disposed in an opening in the third organic insulating layer 118. The emitting layer 212b may comprise a high molecular weight organic material or a low molecular weight organic material that emits light of a predetermined color.

[0088] Functional layer 212f may include a first functional layer 212a and a second functional layer 212c. The first functional layer 212a may be disposed between the first electrode 211 and the emitter layer 212b, and the second functional layer 212c may be disposed between the emitter layer 212b and the second electrode 213. However, at least one of the first functional layer 212a and the second functional layer 212c may be omitted. The configuration of the first functional layer 212a and the second functional layer 212c will be described in detail below.

[0089] The first functional layer 212a can include a hole transport layer ("HTL") and / or a hole injection layer ("HIL"). The second functional layer 212c can include an electron transport layer ("ETL") and / or an electron injection layer ("EIL"). The first functional layer 212a and / or the second functional layer 212c can be a common layer formed to cover the entire substrate 100 in the same manner as the second electrode 213 described later.

[0090] The second electrode 213 can be disposed on the functional layer 212f. The second electrode 213 can include a conductive material having a low work function. For example, the second electrode 213 can include a (semi-)transparent layer including silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or an alloy thereof. Optionally, the second electrode 213 can further include a layer such as a layer including ITO, IZO, ZnO, or In2O3 on the (semi-)transparent layer including the conductive material described above.

[0091] In an embodiment, a capping layer 215 can be disposed on the second electrode 213. The capping layer 215 can include an inorganic material (e.g., lithium fluoride (LiF)) or / and an organic material.

[0092] An encapsulation layer 300 can be disposed on the organic light emitting diode OLED. The encapsulation layer 300 can cover the organic light emitting diode OLED. The encapsulation layer 300 can be disposed on the second electrode 213 and / or the capping layer 215. In an embodiment, the encapsulation layer 300 can include at least one inorganic encapsulation layer and at least one organic encapsulation layer. Figure 3 It is shown that the encapsulation layer 300 includes a first inorganic encapsulation layer 310, an organic encapsulation layer 320, and a second inorganic encapsulation layer 330 stacked in order.

[0093] The encapsulation layer 300 can include the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330. The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 can each include one or more inorganic materials of aluminum oxide (Al2O3), titanium oxide (TiO), tantalum oxide (TA2O5), hafnium oxide (HfO2), ZnO, SiO x , SiN x , and SiO x N y The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 can each have a single-layer structure or a multi-layer structure including the inorganic material described above. The organic encapsulation layer 320 can include a polymer-based material. Examples of the polymer-based material can include an acrylic resin, an epoxy resin, a polyimide, and a polyethylene. In an embodiment, the organic encapsulation layer 320 can include an acrylate.

[0094] The input detection layer 400 can be disposed on the encapsulation layer 300. The input detection layer 400 can include a first touch insulating layer 410, a second touch insulating layer 420, a first conductive layer 430, a third touch insulating layer 440, a second conductive layer 450, and a planarization layer 460. The touch insulating layer can include the first touch insulating layer 410, the second touch insulating layer 420, and / or the third touch insulating layer 440.

[0095] In an embodiment, the first touch insulating layer 410 can be disposed on the second inorganic encapsulation layer 330, and the second touch insulating layer 420 can be disposed on the first touch insulating layer 410. In an embodiment, the first touch insulating layer 410 and the second touch insulating layer 420 can include an organic insulating material.

[0096] In an embodiment, at least one of the first touch insulating layer 410 and the second touch insulating layer 420 can be omitted. For example, the first touch insulating layer 410 can be omitted. In this case, the second touch insulating layer 420 can be disposed on the second inorganic encapsulation layer 330, and the first conductive layer 430 can be disposed on the second touch insulating layer 420.

[0097] The first conductive layer 430 can be disposed on the second touch insulating layer 420, and the third touch insulating layer 440 can be disposed on the first conductive layer 430. In an embodiment, the third touch insulating layer 440 can include an organic insulating material.

[0098] The second conductive layer 450 can be disposed on the third touch insulating layer 440. The touch electrode TE of the input detection layer 400 can have a structure in which the first conductive layer 430 and the second conductive layer 450 are connected to each other. Alternatively, the touch electrode TE can be disposed in any one of the first conductive layer 430 and the second conductive layer 450, and can include a metal line included in the corresponding conductive layer. The first conductive layer 430 and the second conductive layer 450 can each include at least one of Al, Cu, Ti, Mo, and ITO, and can have a single-layer structure or a multi-layer structure including the above-described material. For example, the first conductive layer 430 and the second conductive layer 450 can each have a three-layer structure of Ti / Al / Ti.

[0099] In an embodiment, the planarization layer 460 can cover the second conductive layer 450. The planarization layer 460 can include an organic insulating material.

[0100] Figures 4 to 7 FIG. 1 is a schematic cross-sectional view of a display panel 10 according to an embodiment of the disclosure. Figure 3 ) according to some embodiments.

[0101] Referring to Figure 4 , a thin film transistor TFT (refer to Figure 3) and a storage capacitor Cst (refer to Figure 2 ) of a sub-pixel circuit layer PCL. An organic light emitting diode OLED can be disposed on the sub-pixel circuit layer PCL. A capping layer 215 can be disposed on the organic light emitting diode OLED, and a first inorganic encapsulation layer 310 can be disposed on the capping layer 215.

[0102] The capping layer 215 can include a first capping layer 215a and a second capping layer 215b disposed on the first capping layer 215a. The first capping layer 215a can have a first refractive index and the second capping layer 215b can have a second refractive index. The first refractive index of the first capping layer 215a can be greater than the second refractive index of the second capping layer 215b.

[0103] The first capping layer 215a can include IZO, TiO2, SiN x or other inorganic materials. However, the present disclosure is not limited thereto. The second capping layer 215b can include SiO x N y , silicon oxide (SiO x ), LiF, or other inorganic materials. However, the present disclosure is not limited thereto.

[0104] The first inorganic encapsulation layer 310 disposed on the capping layer 215 can include a first-1 inorganic encapsulation layer 310a, a first-2 inorganic encapsulation layer 310b, and a first-3 inorganic encapsulation layer 310c. The first-2 inorganic encapsulation layer 310b can be disposed on the first-1 inorganic encapsulation layer 310a, and the first-3 inorganic encapsulation layer 310c can be disposed on the first-2 inorganic encapsulation layer 310b. The first-1 inorganic encapsulation layer 310a can have a third refractive index, the first-2 inorganic encapsulation layer 310b can have a fourth refractive index, and the first-3 inorganic encapsulation layer 310c can have a fifth refractive index. The third refractive index of the first-1 inorganic encapsulation layer 310a can be greater than the second refractive index of the second capping layer 215b disposed under the first-1 inorganic encapsulation layer 310a. The fourth refractive index of the first-2 inorganic encapsulation layer 310b can be less than the third refractive index of the first-1 inorganic encapsulation layer 310a disposed under the first-2 inorganic encapsulation layer 310b. The fifth refractive index of the first-3 inorganic encapsulation layer 310c can be less than the fourth refractive index of the first-2 inorganic encapsulation layer 310b. In other words, the third refractive index of the first-1 inorganic encapsulation layer 310a can be the greatest, the fifth refractive index of the first-3 inorganic encapsulation layer 310c can be the smallest, and the fourth refractive index of the first-2 inorganic encapsulation layer 310b can be between the third refractive index and the fifth refractive index.

[0105] In particular, the third refractive index of the first-1 inorganic encapsulation layer 310a can be about 1.79 to about 1.99. The fourth refractive index of the first-2 inorganic encapsulation layer 310b can be about 1.6 to about 1.8. The fifth refractive index of the first-3 inorganic encapsulation layer 310c can be about 1.42 to about 1.62. The third refractive index of the first-1 inorganic encapsulation layer 310a can be greater than the fifth refractive index of the first-3 inorganic encapsulation layer 310c and the fourth refractive index of the first-2 inorganic encapsulation layer 310b, thereby improving the encapsulation characteristics of the first inorganic encapsulation layer 310.

[0106] Light emitted from the emission layer 212b (refer to Figure 3 ) can be reflected from each of the interface between the organic light emitting diode OLED and the first capping layer 215a, the interface between the first capping layer 215a and the second capping layer 215b, and the interface between the second capping layer 215b and the first-1 inorganic encapsulation layer 310a. By increasing the reflectivity of the light reflected at each interface, the light emission efficiency of the light emitted from the emission layer 212b can be improved. In order to increase the reflectivity of the light emitted from the emission layer 212b at the interface between the layers, it is desirable that the difference in refractive index between the layers is large. The second refractive index of the second capping layer 215b can be less than the first refractive index of the first capping layer 215a disposed under the second capping layer 215b, and the third refractive index of the first-1 inorganic encapsulation layer 310a can be greater than the second refractive index of the second capping layer 215b, thereby increasing the difference in refractive index at the interface between the organic light emitting diode OLED and the first capping layer 215a, the difference in refractive index at the interface between the first capping layer 215a and the second capping layer 215b, and the difference in refractive index at the interface between the second capping layer 215b and the first-1 inorganic encapsulation layer 310a. Accordingly, the reflectivity of the light emitted from the emission layer 212b at each interface can be improved, and thus, the light emission efficiency and the reliability of the display device 1 (refer to Figure 1 ) can be effectively improved.

[0107] On the other hand, when the light emitted from the emission layer 212b (refer to Figure 3When the emitted light has low reflectivity at the interface between the first-1 inorganic encapsulation layer 310a and the first-2 inorganic encapsulation layer 310b, and at the interface between the first-2 inorganic encapsulation layer 310b and the first-3 inorganic encapsulation layer 310c, the optical characteristics of the display device 1 can be improved. The fourth refractive index of the first-2 inorganic encapsulation layer 310b can be less than the third refractive index of the first-1 inorganic encapsulation layer 310a, and the fifth refractive index of the first-3 inorganic encapsulation layer 310c can be less than the fourth refractive index of the first-2 inorganic encapsulation layer 310b, thereby reducing the refractive index difference at the interface between the first-1 inorganic encapsulation layer 310a and the first-2 inorganic encapsulation layer 310b, and at the interface between the first-2 inorganic encapsulation layer 310b and the first-3 inorganic encapsulation layer 310c. Accordingly, the reflectivity of light emitted from the emitting layer 212b at each interface can be reduced, and therefore, the optical characteristics and reliability of the display device 1 can be improved.

[0108] In this embodiment, the thickness t1 of the first sealing layer 215a can be approximately [missing information]. to approximately The thickness t2 of the second capping layer 215b can be approximately to approximately The thickness t3 of the first inorganic encapsulation layer 310a can be approximately to approximately When the thickness t1 of the first capping layer 215a and the thickness t2 of the second capping layer 215b are each approximately to approximately Furthermore, the thickness t3 of the first inorganic encapsulation layer 310a is approximately to approximately At that time, from the emission layer 212b (reference) Figure 3 Light emitted and reflected from each of the interfaces between the organic light-emitting diode (OLED) and the first capping layer 215a, between the first capping layer 215a and the second capping layer 215b, and between the second capping layer 215b and the first inorganic encapsulation layer 310a can induce a resonant effect, thereby improving the luminous efficiency and reliability of the display device 1. As used herein, in the thickness direction (z-direction (reference) Figure 3 The thickness is measured on the surface.

[0109] In addition, the third refractive index of the first inorganic encapsulation layer 310a can be about 1.79 to about 1.99, which is a relatively high refractive index, and the thickness t3 of the first inorganic encapsulation layer 310a can be relatively large, thereby improving the encapsulation characteristics of the display panel 10.

[0110] The thickness t4 of the first-second inorganic encapsulation layer 310b can be approximately to approximately When the thickness t4 of the first-2 inorganic encapsulation layer 310b is approximately to about When the light emitted from the emission layer 212b (refer to Figure 3 ) and reflected from the interface between the first-1 inorganic encapsulation layer 310a and the first-2 inorganic encapsulation layer 310b is increased in reflectance, the optical characteristics and reliability of the display device 1 (refer to Figure 1 ) can be improved.

[0111] Referring to Figure 5 , in an embodiment, the first-2 inorganic encapsulation layer 310b can include a lower layer 310b1 and an upper layer 310b2. The remaining elements are the same as those of the embodiment shown in Figure 4 . The first-2 inorganic encapsulation layer 310b can be provided as two layers, thereby increasing the reflectance of the light emitted from the emission layer 212b (refer to Figure 3 ) and reflected from the interface between the lower layer 310b1 and the upper layer 310b2 of the first-2 inorganic encapsulation layer 310b. Accordingly, the optical characteristics and reliability of the display device 1 (refer to Figure 1 ) can be improved.

[0112] In particular, the refractive index of the lower layer 310b1 of the first-2 inorganic encapsulation layer 310b can be about 1.67 to about 1.87, and the thickness t4a of the lower layer 310b1 of the first-2 inorganic encapsulation layer 310b can be about to about In particular, the refractive index of the upper layer 310b2 of the first-2 inorganic encapsulation layer 310b can be about 1.52 to about 1.72, and the thickness t4b of the upper layer 310b2 of the first-2 inorganic encapsulation layer 310b can be about to about

[0113] Referring to Figure 6 , unlike the embodiment shown in Figure 4 , the capping layer 215 can include a first capping layer 215a, a second capping layer 215b, and a third capping layer 215c. The third capping layer 215c can be disposed below the first capping layer 215a. In other words, the first capping layer 215a can be arranged between the second capping layer 215b and the third capping layer 215c.

[0114] In an embodiment, the first capping layer 215a can have a first refractive index. The second capping layer 215b disposed on the first capping layer 215a can have a second refractive index smaller than the first refractive index. The third capping layer 215c can have a sixth refractive index smaller than the first refractive index. In other words, the first refractive index of the first capping layer 215a can be relatively greater than the second refractive index of the second capping layer 215b and the sixth refractive index of the third capping layer 215c.

[0115] The second capping layer 215b and the third capping layer 215c can include SiO x y , SiO x , LiF, or other inorganic materials. However, the disclosure is not limited thereto. The first capping layer 215a can include IZO, TiO2, SiN x , or other inorganic materials. However, the disclosure is not limited thereto.

[0116] By providing the capping layer 215 as three layers having different refractive indexes from each other and a large refractive index difference between the layers, light emitted from the emission layer 212b (refer to Figure 3 ) can be reflected not only from the interface between the organic light emitting diode OLED and the third capping layer 215c and the interface between the first capping layer 215a and the second capping layer 215b but also from the interface between the first capping layer 215a and the third capping layer 215c, thereby improving the light emitting efficiency and reliability of the display device 1 (refer to Figure 1 ).

[0117] The thickness t5 of the first capping layer 215a, the thickness t6 of the second capping layer 215b, and the thickness t7 of the third capping layer 215c can each be about to about When the thickness t5 of the first capping layer 215a, the thickness t6 of the second capping layer 215b, and the thickness t7 of the third capping layer 215c are each about to about , light emitted from the emission layer 212b (refer to Figure 3 ) and reflected from the interface between the organic light emitting diode OLED and the third capping layer 215c, the interface between the first capping layer 215a and the third capping layer 215c, the interface between the second capping layer 215b and the first capping layer 215a, and the interface between the second capping layer 215b and the first-1 inorganic encapsulation layer 310a can cause a resonance effect, and can effectively improve the light emitting efficiency and reliability of the display device 1 (refer to Figure 1 ).

[0118] Referring to Figure 7 , the organic light emitting diode OLED can include a first organic light emitting diode OLED1, a second organic light emitting diode OLED2, and a third organic light emitting diode OLED3. The first organic light emitting diode OLED1, the second organic light emitting diode OLED2, and the third organic light emitting diode OLED3 can emit different colors of light. For example, the first organic light emitting diode OLED1 can emit red light, the second organic light emitting diode OLED2 can emit green light, and the third organic light emitting diode OLED3 can emit blue light.

[0119] ​A first-1 capping layer 215a1 and a second-1 capping layer 215b1 can be disposed on the first organic light emitting diode OLED1. A first-2 capping layer 215a2 and a second-2 capping layer 215b2 can be disposed on the second organic light emitting diode OLED2. A first-3 capping layer 215a3 and a second-3 capping layer 215b3 can be disposed on the third organic light emitting diode OLED3.

[0120] The refractive index of the second-1 capping layer 215b1 can be less than the refractive index of the first-1 capping layer 215a1. The refractive index of the second-2 capping layer 215b2 can be less than the refractive index of the first-2 capping layer 215a2. The refractive index of the second-3 capping layer 215b3 can be less than the refractive index of the first-3 capping layer 215a3. The refractive index of the first-1 inorganic encapsulation layer 310a can be greater than the refractive indices of the second-1 capping layer 215b1, the second-2 capping layer 215b2, and the second-3 capping layer 215b3. The difference in the refractive indices of the first capping layer 215a, the second capping layer 215b, and the first-1 inorganic encapsulation layer 310a can be large, thereby increasing the difference in the refractive indices at the interface between the organic light emitting diode OLED and the first capping layer 215a, at the interface between the first capping layer 215a and the second capping layer 215b, and at the interface between the second capping layer 215b and the first-1 inorganic encapsulation layer 310a. Accordingly, the reflectivity of light emitted from the emission layer 212b (refer to FIG. 2) at each interface can be improved, and as a result, the light emitting efficiency and the reliability of the display device 1 (refer to FIG. 1) can be effectively improved. Figure 3 ) can be improved. Figure 1

[0121] The thickness d1 of the first-1 capping layer 215a1, the thickness d2 of the first-2 capping layer 215a2, and the thickness d3 of the first-3 capping layer 215a3 can each be about to about The thickness s1 of the second-1 capping layer 215b1, the thickness s2 of the second-2 capping layer 215b2, and the thickness s3 of the second-3 capping layer 215b3 can each be about to about The thickness of the first-1 inorganic encapsulation layer 310a can be about to about When the thickness d1 of the first-1 capping layer 215a1, the thickness d2 of the first-2 capping layer 215a2, the thickness d3 of the first-3 capping layer 215a3, the thickness s1 of the second-1 capping layer 215b1, the thickness s2 of the second-2 capping layer 215b2, and the thickness s3 of the second-3 capping layer 215b3 are each about to about and the thickness of the first-1 inorganic encapsulation layer 310a is about to about​ Light emitted from the emission layer 212b (refer to Figure 3 ) and reflected from the interface between the organic light emitting diode OLED and the first capping layer 215a, the interface between the first capping layer 215a and the second capping layer 215b, and the interface between the second capping layer 215b and the first-1 inorganic encapsulation layer 310a can cause a resonance effect, and can effectively improve the light emitting efficiency and reliability of the display device 1 (refer to Figure 1 ).

[0122] In an embodiment, the thickness d1 of the first-1 capping layer 215a1 can be different from the thickness d3 of the first-3 capping layer 215a3. The thickness d1 of the first-1 capping layer 215a1 and the thickness d2 of the first-2 capping layer 215a2 can be equal to or different from each other. The thickness d1 of the first-1 capping layer 215a1 and the thickness d3 of the first-3 capping layer 215a3 can be different from each other, thereby reducing the white angle dependency ("WAD") of the display device 1 (refer to Figure 1 ).

[0123] In an embodiment, the thickness s1 of the second-1 capping layer 215b1 can be different from the thickness s3 of the second-3 capping layer 215b3. The thickness s1 of the second-1 capping layer 215b1 and the thickness s2 of the second-2 capping layer 215b2 can be equal to or different from each other. The thickness s1 of the second-1 capping layer 215b1 and the thickness s3 of the second-3 capping layer 215b3 can be different from each other, thereby reducing the WAD of the display device 1 (refer to Figure 1 ).

[0124] In the case of a micro-patterned organic light emitting diode ("MPO"), since organic light emitting diodes OLEDs that respectively emit red light, green light, and blue light are formed, the thickness d1 of the first-1 capping layer 215a1, the thickness d2 of the first-2 capping layer 215a2, and the thickness d3 of the first-3 capping layer 215a3 can be different from each other, or the thickness s1 of the second-1 capping layer 215b1, the thickness s2 of the second-2 capping layer 215b2, and the thickness s3 of the second-3 capping layer 215b3 can be different from each other.

[0125] The third refractive index of the first-1 inorganic encapsulation layer 310a can be greater than the refractive index of the second-1 capping layer 215b1, the refractive index of the second-2 capping layer 215b2, and the refractive index of the second-3 capping layer 215b3. The third refractive index of the first-1 inorganic encapsulation layer 310a can be about 1.79 to about 1.99. In addition, the thickness of the first-1 inorganic encapsulation layer 310a can be about to about The first inorganic encapsulation layer 310a, which has a relatively high refractive index, can be relatively thick, thereby improving the encapsulation characteristics of the display panel 10.

[0126] Figures 8 to 10 The simulation results of luminous efficiency and WAD trajectory according to the embodiment are illustrated schematically.

[0127] refer to Figure 8 ,exist Figure 4 In the embodiment shown, when the thickness t1 of the first capping layer 215a is approximately The thickness t2 of the second sealing layer 215b is approximately The thickness t3 of the first inorganic encapsulation layer 310a is approximately Furthermore, the thickness t4 of the first-second inorganic encapsulation layer 310b is approximately... At that time, display device 1 (reference) Figure 1 The luminous efficiency of the device is approximately 101% compared to the luminous efficiency of structures manufactured in the prior art, and the WAD of the visible display device 1 is very small.

[0128] refer to Figure 9 ,exist Figure 6 In the embodiment shown, when the thickness t5 of the third capping layer 215c is approximately The thickness t6 of the first sealing layer 215a is approximately The thickness t7 of the second sealing layer 215b is approximately The thickness of the first inorganic encapsulation layer 310a is approximately Furthermore, the thickness of the first-second inorganic encapsulation layer 310b is approximately... At that time, display device 1 (reference) Figure 1 The luminous efficiency of the device is approximately 101% compared to the luminous efficiency of structures manufactured in the prior art, and the WAD of the visible display device 1 is very small.

[0129] refer to Figure 10 ,exist Figure 7 In the embodiment shown, when the thickness d1 of the first-1 capping layer 215a1 and the thickness d2 of the first-2 capping layer 215a2 are each approximately The thickness d3 of the first-3 capping layer 215a3 is approximately The thickness s1 of the second-1 capping layer 215b1 and the thickness s2 of the second-2 capping layer 215b2 are each approximately The thickness s3 of the second-third capping layer 215b3 is approximately The thickness of the first inorganic encapsulation layer 310a is approximately Furthermore, the thickness of the first-second inorganic encapsulation layer 310b is approximately... The luminous efficiency (Weff) of the display device 1 (refer to Figure 1 ) is about 106% relative to the luminous efficiency of the structure manufactured in the related art, and the WAD of the display device 1 is small.

[0130] In an embodiment, by providing the capping layer 215 (refer to Figure 5 and Figure 6 ) as two or three layers having different refractive indexes from each other, light emitted from the emission layer 212b (refer to Figure 3 ) and reflected at each interface can be reflected at a high ratio from the interface between the respective layers of the capping layer 215, thereby improving the luminous efficiency of the display device 1 (refer to Figure 1 ), and, by providing the thickness of each layer of the capping layer 215 to be about to about , the resonance effect of light reflected from the interface between the respective layers can be increased, or, by changing the thickness of the capping layer 215 on the organic light emitting diode OLED (refer to Figure 4 ) emitting light of different colors, the WAD of the display device 1 can be reduced, thereby effectively improving the reliability and quality of the display device.

[0131] Figure 11 is a block diagram of an electronic device according to an embodiment.

[0132] Referring to Figure 11 , in an embodiment, the electronic device 1000 can include a processor 1010, a memory device 1020, a storage device 1030, an input / output (“I / O”) device 1040, a power supply 1050, and a display device 1060. Here, the display device 1060 can correspond to the display device 1 of Figure 1 . The electronic device 1000 can further include a plurality of ports for communication with a video card, a sound card, a memory card, or a universal serial bus (“USB”) device, etc. In an embodiment, the electronic device 1000 can be implemented as a television. In another embodiment, the electronic device 1000 can be implemented as a smart phone. However, embodiments are not limited thereto, and in another embodiment, the electronic device 1000 can be implemented as a portable phone, a video phone, a smart pad, a smart watch, a tablet personal computer (“PC”), a car navigation system, a computer monitor, a laptop computer, or a head-mounted (e.g., head-worn) display (“HMD”), etc.

[0133] The processor 1010 can perform various computing functions. In an embodiment, the processor 1010 can be a microprocessor, a central processing unit ("CPU"), or an application processor ("AP"), etc. The processor 1010 can be coupled to other components via an address bus, a control bus, or a data bus, etc. In an embodiment, the processor 1010 can be coupled to an extension bus, such as a peripheral component interconnect ("PCI") bus.

[0134] The memory device 1020 can store data for operations of the electronic device 1000. In an embodiment, the memory device 1020 can include at least one non-volatile memory device (such as an erasable programmable read-only memory ("EPROM") device, an electrically erasable programmable read-only memory ("EEPROM") device, a flash memory device, a phase-change random access memory ("PRAM") device, a resistive random access memory ("RRAM") device, a nano floating gate memory ("NFGM") device, a polymer random access memory ("PoRAM") device, a magnetic random access memory ("MRAM") device, or a ferroelectric random access memory ("FRAM") device, etc.) and / or at least one volatile memory device (such as a dynamic random access memory ("DRAM") device, a static random access memory ("SRAM") device, or a mobile DRAM device, etc.).

[0135] In an embodiment, the storage device 1030 can include a solid state drive ("SSD") device, a hard disk drive ("HDD") device, or a CD-ROM device, etc. In an embodiment, the I / O device 1040 can include an input device (such as a keypad, a key pad, a mouse device, a touch pad, or a touch screen, etc.) and an output device (such as a printer or a speaker, etc.).

[0136] The power supply 1050 can provide power for operations of the electronic device 1000. The power supply 1050 can provide power to the display device 1060. The display device 1060 can be coupled to other components via a bus or other communication link. In an embodiment, the display device 1060 can be included in the I / O device 1040.

[0137] According to the above-described embodiments, a display device having improved reliability and quality can be implemented. However, the scope of the present disclosure is not limited by these effects.

[0138] It is to be understood that the implementations described herein are to be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects in each of the implementations are generally intended to be applicable to other similar features or aspects in other implementations. Although one or more implementations have been described with reference to the attached figures, it will be evident for those skilled in the art that various modifications in form and details can be made therein without departing from the spirit and scope of the claims.

Claims

1. A display device, comprising: substrate; A first organic light-emitting diode is disposed on the substrate; A first capping layer is disposed on the first organic light-emitting diode and has a first refractive index; A second capping layer is disposed on the first capping layer and has a second refractive index that is less than the first refractive index; as well as A first inorganic encapsulation layer is disposed on the second capping layer and has a third refractive index greater than the second refractive index.

2. The display device according to claim 1, wherein the third refractive index of the first-1 inorganic encapsulation layer is 1.79 to 1.

99.

3. The display device according to claim 1, wherein the thickness of the first cover layer is to 4. The display device according to claim 1, wherein the thickness of the second cover layer is to 5. The display device according to claim 1, wherein the thickness of the first-1 inorganic encapsulation layer is to 6. The display device according to claim 1, further comprising a first-2 inorganic encapsulation layer disposed on the first-1 inorganic encapsulation layer and having a fourth refractive index less than the third refractive index.

7. The display device according to claim 6, wherein the fourth refractive index of the first-2 inorganic encapsulation layer is 1.6 to 1.

8.

8. The display device according to claim 6, wherein the thickness of the first-2 inorganic encapsulation layer is to 9. The display device according to claim 6, wherein The first-2 inorganic encapsulation layer includes a lower layer and an upper layer. The refractive index of the lower layer is 1.67 to 1.87, and The refractive index of the upper layer is 1.52 to 1.

72.

10. The display device according to claim 9, wherein the thickness of each of the lower layer and the upper layer is to 11. The display device according to claim 6, further comprising a first-3 inorganic encapsulation layer disposed on the first-2 inorganic encapsulation layer and having a fifth refractive index less than the fourth refractive index.

12. The display device according to claim 1, further comprising a third cover layer disposed below the first cover layer and having a sixth refractive index less than the second refractive index.

13. The display device according to claim 12, wherein the thickness of the third cover layer is to 14. An electronic device comprising: Display device; and The power supply is configured to provide power to the display device. The display device includes: substrate; A first organic light-emitting diode, a second organic light-emitting diode, and a third organic light-emitting diode are disposed on the substrate; The first-1 capping layer is disposed on the first organic light-emitting diode; The first-2 capping layers are disposed on the second organic light-emitting diode; The first-3 capping layer is disposed on the third organic light-emitting diode; The second-1 capping layer is disposed on the first-1 capping layer and has a refractive index that is less than that of the first-1 capping layer; A second capping layer, disposed on the first capping layer and having a refractive index lower than that of the first capping layer; and The second-3 capping layer is disposed on the first-3 capping layer and has a refractive index lower than that of the first-3 capping layer. The thickness of the first-1 capping layer and the thickness of the first-3 capping layer are different from each other.

15. The electronic device of claim 14, wherein the first organic light-emitting diode, the second organic light-emitting diode, and the third organic light-emitting diode emit light of different colors from each other.

16. The electronic device of claim 14, wherein the thickness of the second-1 cover layer and the thickness of the second-3 cover layer are different from each other.

17. The electronic device of claim 14, wherein the thickness of each of the first-1 cover layer, the first-2 cover layer, the first-3 cover layer, the second-1 cover layer, the second-2 cover layer, and the second-3 cover layer is [thickness missing]. to 18. The electronic device of claim 14, further comprising a first-1 inorganic encapsulation layer disposed on the second-1 capping layer, the second-2 capping layer and the second-3 capping layer and having a refractive index greater than the refractive index of each of the second-1 capping layer, the second-2 capping layer and the second-3 capping layer.

19. The electronic device of claim 18, wherein the refractive index of the first-1 inorganic encapsulation layer is 1.79 to 1.

99.

20. The electronic device of claim 18, wherein the thickness of the first-1 inorganic encapsulation layer is to

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