Substrate edge etching device
By incorporating a flow guiding mechanism and a rotation drive mechanism into the substrate edge etching apparatus, the problem of slow substrate edge temperature regulation is solved, enabling rapid temperature adjustment and efficient etching, thereby improving the etching rate and substrate yield.
Patent Information
- Application Number
- CN202410854349.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-27
- Publication Date
- 2025-12-30
AI Technical Summary
In semiconductor manufacturing, the temperature at the substrate edge has a significant impact on the wet etching rate at the edge, leading to a decrease in substrate yield. Existing technologies make it difficult to quickly adjust the substrate edge temperature.
In a substrate edge etching apparatus, an overflow gap is formed by setting a flow guiding mechanism below the edge of the substrate, which allows heated gas to accumulate on the lower surface of the substrate edge, thereby increasing the temperature adjustment rate. Combined with a rotary drive mechanism and an etching solution supply mechanism, rapid temperature adjustment and etching are achieved.
It improves the etching rate at the substrate edge, shortens the substrate processing time, enhances etching uniformity and selectivity, and reduces chemical consumption.
Smart Images
Figure CN121237674A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor equipment, and more particularly to a substrate edge etching apparatus. Background Technology
[0002] In the semiconductor manufacturing process, due to the significant increase in process steps such as thin film deposition, photolithography, etching and chemical mechanical polishing, by-products and residues (such as dielectrics, metals, organics, silicon nitride and silicon oxide thin film materials) inevitably accumulate at the edges of the substrate, which in turn leads to a decrease in substrate yield.
[0003] In existing technologies, dry etching and wet etching processes are generally used to address the removal of edge byproducts and residues. Compared to dry etching, wet etching offers better etching uniformity, controllable etching selectivity, and lower chemical consumption. However, in wet etching, the temperature at the substrate edge significantly affects the etching rate. Therefore, rapidly adjusting the substrate edge temperature is crucial for successful wet etching of substrate edges. Summary of the Invention
[0004] To address the aforementioned technical problems, the purpose of this application is to achieve rapid temperature control at the substrate edge, thereby increasing the etching rate at the substrate edge and shortening the substrate processing time.
[0005] To achieve the above objectives, this application provides a substrate edge etching apparatus.
[0006] In some embodiments, a substrate edge etching apparatus includes: a support mechanism for supporting a substrate; a heating mechanism coaxially disposed around the periphery of the support mechanism, the upper surface of the heating mechanism being lower than the upper surface of the support mechanism, the heating mechanism including a plurality of vents for providing heating gas between the upper surface of the heating mechanism and the lower surface of the substrate through the plurality of vents; an etching liquid supply mechanism for spraying etching liquid onto the edge of the substrate; and a flow guiding mechanism disposed below the edge of the substrate, the plurality of vents being located inside the flow guiding mechanism, the flow guiding mechanism being configured to have an overflow gap between itself and the lower surface of the edge of the substrate, the overflow gap being less than the distance between the upper surface of the heating mechanism and the lower surface of the substrate in the vertical direction.
[0007] Compared with the prior art, this application provides a flow guiding mechanism below the edge of the substrate and forms an overflow gap between the flow guiding mechanism and the lower surface of the substrate edge. This guides the heated gas to first gather on the lower surface of the substrate edge and then discharge it, thereby improving the temperature regulation rate of the substrate edge. This achieves the technical effect of rapid temperature regulation of the substrate edge, increasing the etching rate of the substrate edge, and shortening the substrate processing time. Attached Figure Description
[0008] The preferred embodiments will now be described in a clear and easy-to-understand manner, in conjunction with the accompanying drawings, to further explain the above-mentioned characteristics, technical features, advantages, and implementation methods of the present invention.
[0009] Figures la to lc These are schematic diagrams of substrate edge etching apparatuses according to different embodiments of this application;
[0010] Figure 2 This is a three-dimensional structural diagram of a flow guiding mechanism according to one embodiment of this application;
[0011] Figures 3a to 3d This is a top view of the flow guiding mechanism in different embodiments of this application. Detailed Implementation
[0012] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the specific implementation methods of the present invention will be described below with reference to the accompanying drawings. Obviously, the drawings described below are merely some embodiments of the present invention. For those skilled in the art, other drawings and other implementation methods can be obtained based on these drawings without any creative effort.
[0013] like Figure la The image shows a substrate edge etching apparatus 100 according to an embodiment of this application. The substrate edge etching apparatus 100 includes: a support mechanism 110, a heating mechanism 120, an etching solution supply mechanism 130, and a flow guiding mechanism 140.
[0014] The support mechanism 110 is used to support the substrate 10, and the support mechanism 110 is preferably a vacuum chuck. The heating mechanism 120 is coaxially disposed around the support mechanism 110, and the upper surface of the heating mechanism 120 is lower than the upper surface of the support mechanism 110. The heating mechanism 120 includes a plurality of vents 1211 distributed around the support mechanism 110, which are used to provide heating gas (e.g., nitrogen) between the upper surface of the heating mechanism 120 and the lower surface of the substrate 10 during the heating process of the substrate 10. The etching solution supply mechanism 130 is used to spray etching solution onto the edge of the substrate 10 during edge etching of the substrate 10. A flow guiding mechanism 140 is disposed below the edge of the substrate 10. A plurality of air holes 1211 are located inside the flow guiding mechanism 140. The flow guiding mechanism 140 is configured to have an overflow gap m between itself and the lower surface of the edge of the substrate 10. The vertical height of the overflow gap m is less than the distance n between the upper surface of the heating mechanism 120 and the lower surface of the substrate 10, thereby reducing the flow area of the heating gas, increasing the flow rate of the heating gas, and thus improving the heat exchange efficiency between the heating gas and the edge of the substrate 10. Furthermore, during the heating process of the substrate 10, the heating gas flows from the inside to the outside between the upper surface of the heating mechanism 120 and the lower surface of the substrate 10, accumulates on the lower surface of the edge of the substrate 10 while flowing through the overflow gap m, and then flows out of the overflow gap m.
[0015] In existing substrate edge etching apparatuses, after the heating mechanism introduces heating gas between its upper surface and the lower surface of the substrate, the heating gas flows outward, gradually transferring heat to the substrate during this flow. Therefore, heat loss occurs during the outward flow of the heating gas. When the heating gas reaches below the substrate edge, it can only heat the edge through residual heat, resulting in a slower edge temperature adjustment rate and consequently affecting the substrate edge etching rate. Furthermore, as the heating gas reaches below the substrate edge, it begins to diffuse both outward and downward simultaneously, leading to insufficient contact between the heating gas and the lower surface of the substrate edge, further impacting the heating effect on the substrate edge.
[0016] In this embodiment, the heating mechanism 120 provides heating gas between the upper surface of the heating mechanism 120 and the lower surface of the substrate 10 through the air hole 1211. The heating gas flows outward, and when the heating gas flows through the overflow gap m between the flow guiding mechanism 140 and the lower surface of the edge of the substrate 10, it is gathered by the flow guiding mechanism 140 to the lower surface of the edge of the substrate 10, thereby making the heating gas fully contact the edge of the substrate 10 to improve the temperature regulation rate of the edge of the substrate 10.
[0017] Specifically, the height of the overflow gap m is 0.5-1mm to ensure that the heating gas can fully contact the lower surface of the edge of the substrate 10. Furthermore, the distance n between the upper surface of the heating mechanism 120 and the lower surface of the substrate 10 is 1-1.5mm to provide sufficient space between them, allowing the heating gas to diffuse evenly to all positions on the lower surface of the substrate 10, thus uniformly heating the lower surface of the substrate 10. This also prevents the heating gas ejected from the vent 1211 from exerting a large impact force on the lower surface of the substrate 10, which could lead to unstable fixation of the substrate 10.
[0018] Preferably, such as Figure 2 As shown, the flow guiding mechanism 140 is annular, and its upper surface is formed with a plurality of flow guiding grooves 141. The flow guiding grooves 141 extend from the inner side to the outer side of the flow guiding mechanism 140. A first gap exists between the bottom surface of the flow guiding groove 141 and the bottom surface of the edge of the substrate 10, and a second gap exists between the upper surface of the flow guiding mechanism 140 and the bottom surface of the edge of the substrate 10. The height of the first gap is greater than the height of the second gap. In this embodiment, the overflow gap includes the aforementioned first gap and second gap.
[0019] Preferably, such as Figure 3a As shown, the guide grooves 141 are configured to extend along a preset straight line 1411, and the preset straight line 1411 forms an acute angle with the radial direction r of the guide mechanism 140. Each guide groove 141 is uniformly distributed circumferentially along the guide mechanism 140. Figure 3b As shown, the guide grooves 141 are constructed in an arc shape 1412, and each guide groove 141 is evenly distributed along the circumference of the guide mechanism 140. Figure 3c As shown, the guide channels 141 are constructed in a wave-like shape 1413, and each guide channel 141 is evenly distributed along the circumference of the guide mechanism 140. Figure 3d As shown, the flow channel 141 is constructed in a zigzag shape 1415. In the above four embodiments of the flow channel 141, the length of the flow channel 141 is greater than the circumferential width of the flow guiding mechanism 140, thereby increasing the time for the heating gas to flow through the flow channel 141, which in turn increases the contact time between the heating gas and the edge of the substrate 10, and improves the temperature regulation rate of the edge of the substrate 10.
[0020] Preferably, see Figure la The substrate edge etching apparatus 100 further includes a rotary drive mechanism 160 (e.g., a hollow motor), which is connected to the support mechanism 110 for driving the support mechanism 110 and the substrate 10 it supports to rotate during edge etching of the substrate 10. It should be noted that, in the accompanying drawings of this embodiment, the support mechanism 110 is rotatably mounted at the center of the heating mechanism 120, and the heating mechanism 120 remains stationary while the support mechanism 110 is being driven to rotate.
[0021] Preferably, the guide channel 141 is configured such that a preset straight line 1411 is inclined toward the rotation direction of the support mechanism 110. When the rotation drive mechanism 160 drives the support mechanism 110 and the substrate 10 it supports to rotate, the heating gas located between the upper surface of the heating mechanism 120 and the lower surface of the substrate 10 flows in a vortex shape. The preset straight line 1411 is inclined along the rotation direction of the support mechanism 110, so that when the heating gas flows to the inner side of the guide mechanism 140, the flow direction of the heating gas is consistent with the extension direction of the guide channel 141 (i.e., the preset straight line 1411), thereby increasing the flow velocity of the heating gas in the guide channel 141, and thus improving the heat exchange efficiency between the heating gas and the edge of the substrate 10.
[0022] Furthermore, the etching solution supply mechanism 130 includes a nozzle 131 and a supply section 132, which are connected together. The supply section 132 provides etching solution to the nozzle 131, and the nozzle 131 sprays the etching solution onto the edge of the substrate 10. The rotation drive mechanism 160 drives the support mechanism 110 to rotate the substrate 10, and during the rotation of the substrate 10, the nozzle 131 sprays the etching solution onto the edge of the substrate 10 to perform etching, thereby removing edge by-products and residues from the substrate 10.
[0023] Preferably, the diameter of the heating mechanism 120 is smaller than the diameter of the substrate 10, and the substrate edge etching apparatus 100 further includes a first cover 150, which is disposed outside the heating mechanism 120 and has a cylindrical structure, with the flow guiding mechanism 140 disposed at the top of the first cover 150. Furthermore, as... Figure lb As shown, in another embodiment of this application, the first cover 150 and the flow guiding mechanism 140 can be constructed as a single piece, which helps to reduce the assembly difficulty of the substrate edge etching device 100. For example... Figure lc As shown, in other embodiments of this application, the diameter of the heating mechanism 120 is not less than the diameter of the substrate 10, and the flow guiding mechanism 140 can be directly installed on the edge of the upper surface of the heating mechanism 120 to improve the heating effect of the heating gas on the edge of the substrate 10.
[0024] Preferably, the substrate edge etching apparatus 100 further includes a second cover 170, which is spaced apart from the outer side of the first cover 150. An annular baffle 171 is provided on the side of the second cover 170 facing the support mechanism 110. The annular baffle 171 is higher than the substrate 10 supported by the support mechanism 110 and is used to collect etching liquid. In addition, it can also be used to prevent etching liquid from splashing.
[0025] Specifically, the heating mechanism 120 includes, from top to bottom, a heating mechanism body 121, a gas delivery plate 122, a heating plate 123, and a heat insulation plate 124. The heating mechanism body 121 is coaxially disposed around the periphery of the supporting mechanism 110, with its upper surface lower than the upper surface of the supporting mechanism 110. Air holes 1211 are provided through the heating mechanism body 121. The gas delivery plate 122 is fixed to the lower surface of the heating mechanism body 121. The gas delivery plate 122 has several gas delivery grooves 1221 inside, and these grooves are connected to an external gas supply unit 125 for transmitting heated gas to each air hole 1211. The heating plate 123 has a heating element (e.g., a resistance wire) inside, used to heat the gas delivery plate 122 and the heated gas flowing in the gas delivery grooves 1221. The heat insulation plate 124 isolates the heating plate 123, preventing the heat generated by the heating plate 123 from affecting other surrounding components.
[0026] In addition, the substrate edge etching apparatus 100 also includes a lifting mechanism (not shown in the figure), which is connected to the heating mechanism 120 and the first cover 150 respectively, and is used to drive the heating mechanism 120 and the first cover 150 to rise and fall simultaneously. During the loading or unloading of the substrate 10 by the substrate edge etching apparatus 100, the height of the support mechanism 110 remains unchanged. The lifting mechanism drives the heating mechanism 120 and the first cover 150 to fall simultaneously, so as to increase the vertical distance between the upper surface of the support mechanism 110 and the upper surfaces of the heating mechanism 120 and the first cover 150, so that the robot can pick up and place the substrate 10.
[0027] It should be noted that the above embodiments can be freely combined as needed. The above are merely preferred embodiments of the present invention. For those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.
Claims
1. A substrate edge etching apparatus, characterized by, The substrate edge etching device comprises: a bearing mechanism for bearing a substrate; a heating mechanism coaxially arranged on the side of the bearing mechanism and below the substrate, the heating mechanism comprising a plurality of air holes for providing a heating gas between the upper surface of the heating mechanism and the lower surface of the substrate through the air holes; an etching liquid supply mechanism for spraying etching liquid to the edge of the substrate; a flow guide mechanism arranged below the edge of the substrate, the air holes being located inside the flow guide mechanism, the flow guide mechanism being configured to have an overflow gap between the lower surface of the edge of the substrate, the height of the overflow gap in the vertical direction being less than the distance between the upper surface of the heating mechanism and the lower surface of the substrate.
2. The substrate edge etching device according to claim 1, wherein the height of the overflow gap is 0.5-1mm.
3. The substrate edge etching device according to claim 1, wherein the distance between the upper surface of the heating mechanism and the lower surface of the substrate is 1-1.5mm.
4. The substrate edge etching device according to claim 1, wherein the flow guide mechanism is in the shape of a circular ring, and the upper surface of the flow guide mechanism is configured with a plurality of flow guide grooves extending from the inside of the flow guide mechanism to the outside of the flow guide mechanism.
5. The substrate edge etching device according to claim 4, wherein the flow guide grooves are configured to extend along a preset straight line, and the preset straight line forms an acute angle with the radial direction of the flow guide mechanism; and / or the flow guide grooves are configured in the shape of an arc; and / or the flow guide grooves are configured in the shape of a wave; and / or the flow guide grooves are configured in the shape of a zigzag. The diameter of the heating mechanism is smaller than the diameter of the substrate, and the substrate edge etching device further comprises: a first cover arranged outside the heating mechanism, and the flow guide mechanism is arranged at the top end of the first cover.
7. The substrate edge etching device according to claim 6, wherein the first cover and the flow guide mechanism are integrally formed.
8. The substrate edge etching device according to claim 1, wherein the diameter of the heating mechanism is not less than the diameter of the substrate, and the flow guide mechanism is arranged at the edge of the upper surface of the heating mechanism.
6. The substrate edge etching apparatus of claim 1, wherein Further comprising: a second cover arranged outside the first cover in a spaced manner, and a ring-shaped baffle is arranged at the top end of the second cover towards one side of the bearing mechanism, the ring-shaped baffle being higher than the substrate borne by the bearing mechanism for collecting the etching liquid. Further comprising: a rotary drive mechanism in transmission connection with the bearing mechanism for driving the bearing mechanism and the substrate to rotate during the edge etching of the substrate.
11. The substrate edge etching device according to claim 10, wherein the flow guide mechanism is in the shape of a circular ring, and the upper surface of the flow guide mechanism is configured with a plurality of flow guide grooves extending from the inside of the flow guide mechanism to the outside of the flow guide mechanism. 9. The substrate edge etching apparatus of claim 6, wherein, 10. The substrate edge etching apparatus of claim 1, wherein The guide grooves are respectively configured to extend along preset straight lines, the preset straight lines form acute angles with the radial direction of the guide mechanism, and the guide grooves are configured to be inclined along the rotation direction of the bearing mechanism.
12. The substrate edge etching apparatus of claim 1, wherein The heating mechanism sequentially comprises, from top to bottom: a heating mechanism main body coaxially arranged on the circumferential side of the bearing mechanism, the air holes being arranged through the heating mechanism main body; a gas conveying disc for conveying the heating gas to each air hole; a heating disc for heating the gas conveying disc and the heating gas; a heat insulation disc for isolating the heating disc.