Optical structure, semiconductor light emitting device, and light emitting apparatus

Abstract

The application relates to an optical structure, a semiconductor light-emitting device and a light-emitting apparatus. The optical structure comprises a light-transmitting piece and a truncation structure. The light-transmitting piece comprises a support part and a light-emitting part which are integrally arranged. The support part is hollowly arranged, and the light-emitting part encloses one end of the support part. The truncation structure is light-opaque and has a through hole. The outer side of the truncation structure corresponds to the inner side of the support part and laterally shields all the inner sides of the support part, and one end of the through hole corresponds to the light-emitting part. The optical structure integrates the truncation structure on the inner side of the support part of the light-transmitting piece. The truncation structure shields part of the lateral light rays and truncates the light emission of the light-emitting chip, thereby improving the cutoff of the light spot projected by the semiconductor light-emitting device, making the light spot edge clearer, weakening or basically eliminating the light-dark transition phenomenon of the light spot, and improving the light spot quality.

Description

Technical Field

[0001] This application relates to the field of semiconductor light-emitting technology, and in particular to an optical structure, a semiconductor light-emitting device, and a light-emitting apparatus. Background Technology

[0002] Traditional light-emitting devices typically consist of an LED chip and a light-transmitting adhesive layer that encapsulates the LED chip. Because the light emission of the LED chip follows a Lambertian distribution, its luminous intensity decreases as the emission angle increases. This results in poor cutoff of the light spot projected by traditional light-emitting devices, unclear edge of the light spot, and a transition between light and dark areas, thus the quality of the light spot needs to be improved. Summary of the Invention

[0003] Therefore, it is necessary to provide an optical structure, a semiconductor light-emitting device, and a light-emitting apparatus to address the problem of poor cutoff of the light spot projected by traditional light-emitting devices.

[0004] An optical structure comprising:

[0005] A light-transmitting element, comprising an integrally formed support portion and a light-emitting portion, wherein the support portion is hollow and the light-emitting portion closes one end of the support portion; and

[0006] The cut-off structure is opaque and has a through hole. The outer side of the cut-off structure corresponds to the inner side of the support portion and blocks all the inner sides of the support portion laterally. One end of the through hole corresponds to the light-emitting portion.

[0007] In one embodiment, the truncated structure is light-absorbing.

[0008] In one embodiment, the light-transmitting element further includes a light guide portion, which extends outward from the light-emitting portion and extends into the through hole, and the light guide portion is gradually reduced in the extending direction.

[0009] In one embodiment, the light guide portion passes through the through hole and is adapted to the through hole.

[0010] In one embodiment, the light-emitting portion has a protruding ring that protrudes outward. The protruding ring is located between the support portion and the light-guiding portion and forms a receiving groove with the support portion. The cut-off structure fills at least a portion of the receiving groove.

[0011] In one embodiment, the light-emitting portion has an incident surface and an emitting surface; the incident surface is provided with a plurality of pyramidal portions, each of the pyramidal portions having at least three conical lateral surfaces; or the emitting surface is provided with a plurality of protrusions, each of the protrusions being used to scatter the emitted light.

[0012] In one embodiment, the optical structure further includes a light-diffusing adhesive layer that covers the plurality of pyramidal portions and a portion of the hole wall of the through-hole.

[0013] In one embodiment, the end of the cut-off structure that is away from the light-emitting portion extends relative to the other end of the support portion.

[0014] In one embodiment, the through hole includes a first hole segment and a second hole segment that are interconnected. The second hole segment is disposed corresponding to the light-emitting part and is gradually enlarged in the direction toward the light-emitting part. The cut-off structure is bonded to the support part by light-scattering adhesive, and the light-scattering adhesive covers at least a portion of the hole wall of the second hole segment.

[0015] A semiconductor light-emitting device, comprising:

[0016] Base;

[0017] A light-emitting chip, wherein the light-emitting chip is disposed on the substrate; and

[0018] An optical structure, wherein the optical structure is the optical structure described in any of the above embodiments, the optical structure is disposed on the substrate and surrounds the substrate to form a sealed cavity, and the light-emitting chip is located in the cavity.

[0019] A light-emitting device, comprising:

[0020] Circuit board; and

[0021] A semiconductor light-emitting device is disposed on the circuit board and is the semiconductor light-emitting device as described in the above embodiment.

[0022] The aforementioned optical structure, semiconductor light-emitting device, and light-emitting apparatus integrate a cutoff structure on the inner surface of the support portion of the light-transmitting component. This cutoff structure completely blocks all inner surfaces of the support portion laterally. The light emitted by the light-emitting chip enters the through-hole through a groove. Lateral light rays illuminating the cutoff structure are blocked and cannot reach the inner surface of the light-transmitting support portion, preventing light from escaping from the outer surface of the support portion. When applied to lighting, displays, or other scenarios, this significantly improves or essentially eliminates lateral light leakage between adjacent semiconductor light-emitting devices. Light ultimately enters the light-emitting portion of the light-transmitting component only through the through-hole and exits from the light-emitting surface. Because the cutoff structure blocks part of the lateral light rays, it cuts off the light emission from the light-emitting chip, improving the cutoff of the light spot projected by the semiconductor light-emitting device. The light spot edges are clearer, and the transition between light and dark areas is weakened or essentially eliminated, resulting in higher light spot quality.

[0023] Furthermore, the integrated optical structure simplifies the overall design. During assembly, the optical structure can be installed as a single unit without the need for separate installation of the cut-off structure and the light-transmitting component. This reduces processing steps, improves production efficiency, and lowers the production cost of semiconductor light-emitting devices. Simultaneously, the cut-off structure is integrated into the light-transmitting component, fully utilizing its internal space and reducing the overall size of the optical structure. This, in turn, reduces the size of the semiconductor light-emitting device, facilitating its miniaturization and increasing its application scenarios.

[0024] Furthermore, in some applications, to prevent light leakage between adjacent traditional light-emitting devices, the conventional method typically involves setting up a grid-like light-blocking structure and inserting a light guide into each grid of the light-blocking structure. The light emitted by the traditional light-emitting device is then guided out through the light guide. Clearly, the optical structure in this application integrates a light-transmitting element and a cutoff structure. When applied to the aforementioned scenarios, the optical structure can replace the aforementioned light-blocking structure and light guide, significantly simplifying the structure and reducing costs. Simultaneously, its built-in cutoff structure does not significantly affect the light-emitting surface of the light-emitting part; that is, under the same conditions, the light-emitting surface of the light-emitting part is much larger than the light-emitting surface of the aforementioned light guide, thus improving the lighting or display effect. Attached Figure Description

[0025] Figure 1 This is a cross-sectional view of the semiconductor light-emitting device in the first embodiment of this application.

[0026] Figure 2 This is a cross-sectional view of the semiconductor light-emitting device in the second embodiment of this application.

[0027] Figure 3 This is a cross-sectional view of the semiconductor light-emitting device in the third embodiment of this application.

[0028] Figure 4 This is a cross-sectional view of the semiconductor light-emitting device in the fourth embodiment of this application.

[0029] Figure 5 This is a cross-sectional view of the semiconductor light-emitting device in the fifth embodiment of this application.

[0030] Figure 6 This is a cross-sectional view of the semiconductor light-emitting device in the sixth embodiment of this application.

[0031] Figure 7 This is a partial cross-sectional view of a light-emitting device in one embodiment of this application.

[0032] Explanation of reference numerals in the attached figures:

[0033] 100-Semiconductor light-emitting device; 102-Cavity; 110-Substrate; 112-Groove; 114-Plastic part; 120-Light-emitting chip; 130-Optical structure; 131-Through hole; 132-Light emitting end; 133-Light emitting end; 134-First aperture segment; 135-Second aperture segment; 140-Light-transmitting element; 141-Support part; 142-Light emitting part; 143-Light emitting surface; 144-Light emitting surface; 145-Pyramidal part; 146-Pyramidal side surface; 147-Protrusion; 148-Guide surface; 150-Truncation structure; 160-Light diffusing adhesive layer; 170-Light scattering adhesive; 180-Light guide part; 190-Protrusion ring; 192-Receiving groove;

[0034] 200 - Light-emitting device; 210 - Circuit board. Detailed Implementation

[0035] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0036] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0037] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0038] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0039] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0040] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0041] Please see Figure 1 , Figure 1 A cross-sectional view of a semiconductor light-emitting device according to a first embodiment of this application is shown. The semiconductor light-emitting device 100 provided in the first embodiment of this application includes a substrate 110, a light-emitting chip 120, and an optical structure 130. The optical structure 130 is disposed on the substrate 110 and forms a sealed cavity 102 with the substrate 110. The light-emitting chip 120 is disposed on the substrate 110 and located within the cavity 102, thus being isolated from the external environment and unaffected by it, thereby improving its reliability and lifespan.

[0042] The substrate 110 serves as a support and has a built-in groove 112, which forms part of the cavity 102. The light-emitting chip 120 is disposed at the bottom of the groove 112 and is electrically connected to the support. The optical structure 130 has a non-through light-emitting hole. One end of the optical structure 130 is sealed and bonded to the front side of the support, allowing the light-emitting hole to communicate with the groove 112, thus forming a closed cavity 102. Clearly, the light-emitting hole constitutes another part of the cavity 102.

[0043] It should be noted that in other embodiments, the substrate 110 may be a substrate, at least one optical structure 130 is disposed on the substrate and surrounds the substrate to form at least one sealed cavity 102, and at least one light-emitting chip 120 is disposed in each cavity 102. When there are multiple optical structures 130, the semiconductor light-emitting device 100 is a COB device; or, the substrate 110 may also include a substrate and a dam disposed on the substrate, the dam surrounds the substrate to form a groove 112, one end of the optical structure 130 is sealed and bonded to the dam, and the number of dams may be set to multiple according to actual needs. In this case, the semiconductor light-emitting device 100 is also a COB device.

[0044] To prevent the light emitted by the light-emitting chip 120 from escaping from the side of the bracket, the plastic portion 114 of the bracket can be made of a light-absorbing material to absorb the light incident upon it. This light-absorbing material can be, but is not limited to, black or dark-colored plastic. Obviously, in other embodiments, the plastic portion 114 of the bracket can be white, allowing its surface to reflect light and essentially block it as well; its material can be, but is not limited to, polyphthalamide (PPA).

[0045] The light-emitting chip 120 can be, but is not limited to, an LED chip, and is a vertical chip. An LED chip is disposed within a recess 112, its back electrode being die-bonded to a pad on a support, and its front electrode being electrically connected to another pad on the support via a bonding wire (not labeled). In alternative embodiments, the number of light-emitting chips 120 is at least two. For example, two LED chips are disposed within the recess 112, and the two LED chips emit the same or different colors; or, three LED chips are disposed within the recess 112, and the three LED chips emit the same or different colors. When the three LED chips emit different colors, any one of the three LED chips can be controlled to emit light to achieve monochromatic light emission. Furthermore, the type of LED chip is not limited to a vertical chip; it can be a horizontal chip or a flip chip.

[0046] The optical structure 130 includes a light-transmitting element 140 and a cutoff structure 150. The light-transmitting element 140 includes an integrally formed support portion 141 and a light-emitting portion 142. The support portion 141 is hollow, and the light-emitting portion 142 closes one end of the support portion 141. The cutoff structure 150 is opaque and has a through hole 131. The outer surface of the cutoff structure 150 corresponds to the inner surface of the support portion 141 and laterally blocks all inner surfaces of the support portion 141. One end of the through hole 131 corresponds to the light-emitting portion 142, and the other end of the through hole 131 communicates with the groove 112. The through hole 131 is equivalent to the aforementioned light-emitting aperture; one end of the through hole 131 can be considered as the light-emitting end 132 of the light-emitting aperture, and the other end of the through hole 131 can be considered as the light-inlet end 133 of the light-emitting aperture.

[0047] By integrating a cut-off structure 150 on the inner side of the support portion 141 of the light-transmitting element 140, the cut-off structure 150 completely blocks all the inner sides of the support portion 141 in the lateral direction. The light emitted by the light-emitting chip 120 enters the through hole 131 through the groove 112. The lateral light illuminating the cut-off structure 150 is blocked and cannot illuminate the inner side of the light-transmitting support portion 141, preventing light from escaping from the outer side of the support portion 141. When applied to lighting, display or other scenarios, this significantly improves or basically eliminates the lateral light leakage phenomenon between adjacent semiconductor light-emitting devices 100. Light can only enter the light-emitting part 142 of the light-transmitting element 140 from the light-emitting end 132 and be emitted from the light-emitting surface 144 of the light-emitting part 142. Since the cut-off structure 150 blocks part of the side light, the light emission of the light-emitting chip 120 is cut off, thereby improving the cutoff of the light spot projected by the semiconductor light-emitting device 100. The edge of the light spot is clearer, and the light spot's brightness transition phenomenon is weakened or basically eliminated, resulting in higher light spot quality.

[0048] Furthermore, the integrated design of the optical structure 130 simplifies the structure. During assembly, the optical structure 130 can be installed as a whole, eliminating the need to separately install the cut-off structure 150 and the light-transmitting element 140. This reduces processes, improves production efficiency, and lowers the production cost of the semiconductor light-emitting device 100. Simultaneously, the cut-off structure 150 is built into the light-transmitting element 140, fully utilizing its internal space and reducing the volume of the optical structure 130. This, in turn, reduces the volume of the semiconductor light-emitting device 100, facilitating its miniaturization. The smaller space it occupies expands its application scenarios.

[0049] It should be noted that in some application scenarios, in order to prevent light leakage between adjacent traditional light-emitting devices, the conventional method is to set up a grid-like light-blocking structure and insert a light guide in each grid of the light-blocking structure. The light emitted by the traditional light-emitting device is then discharged through the light guide. Obviously, in this application, the optical structure 130 integrates the light-transmitting element 140 and the cut-off structure 150. When applied to the above-mentioned scenarios, the optical structure 130 can replace the aforementioned light-blocking structure and light guide, thus greatly simplifying the structure and reducing costs. At the same time, its built-in cut-off structure 150 does not have a significant impact on the light-emitting surface 144 of the light-emitting part 142. That is, under the same conditions, the light-emitting surface 144 of the light-emitting part 142 is much larger than the light-emitting surface of the aforementioned light guide, thereby improving the lighting or display effect.

[0050] The cutoff structure 150 is designed to absorb light, allowing it to pass directly through the through-hole 131 without significant reflection. Therefore, virtually no reflected or stray light escapes from the through-hole 131. The light rays directly emitted from the through-hole 131 form a light spot, which ultimately defines the edge of the projected light spot. This edge is sharper, with no transition between light and dark areas, significantly improving the cutoff of the light spot. There are virtually no stray light spots, resulting in a pure light spot and a substantial improvement in light spot quality. In other embodiments, the cutoff structure 150 can be made of a reflective material, such as PPA.

[0051] The cut-off structure 150 is annular, and its outer surface is adapted to the inner surface of the support portion 141. Since the thickness of the cut-off structure 150 is greater than that of the support portion 141, lateral light incident upon it is essentially absorbed, further increasing the light absorption rate and resulting in better cutoff of the projected light spot. It should be noted that the outer surface of the cut-off structure 150 and the inner surface of the support portion 141 are not completely fitted together; there can be a suitable gap. Adhesive can fill at least part of this gap, which also serves to block light from escaping outwards.

[0052] In other embodiments, the truncated structure 150 can be a layered structure, specifically, but not limited to, a coating, a plating layer, or a film layer. While ensuring light absorption, its thickness is small, requiring less material, which helps save costs. Moreover, its installation method is relatively simple; it can be directly applied to the inner surface of the support portion 141 by coating, plating, or film application.

[0053] Furthermore, the through hole 131 of the cut-off structure 150 is cylindrical; however, its shape is not limited to this, and it can also be open, closed, or other shapes, depending on the actual needs.

[0054] One end of the cut-off structure 150 is attached to the light-incident surface 143 of the light-emitting part 142, and the other end of the cut-off structure 150 is flush with the other end of the support part 141, and both are sealed and bonded to the front of the bracket.

[0055] The cut-off structure 150 is made of silicone filled with light-absorbing particles. Silicone has good light transmittance; when light shines on the cut-off structure 150, the light can penetrate the silicone and be absorbed by the light-absorbing particles. Its light absorption effect is excellent, and it essentially does not reflect light. Light shining onto the wall of the through-hole 131 is essentially not reflected, thus blocking disordered reflected light. Consequently, the light spot is formed by the beam of light directly passing through the through-hole 131, resulting in a clearer edge, a significant cutoff line between light and dark areas, and no transition zone. In an alternative embodiment, the cut-off structure 150 can also be made of epoxy resin or silicone resin filled with light-absorbing particles.

[0056] Furthermore, the light-absorbing particles can be, but are not limited to, carbon black, which has good light absorption properties. In other embodiments, the light-absorbing particles can also be metal microparticles, black dye particles, or black silicon carbide particles, wherein the metal microparticles can be, but are not limited to, aluminum powder or copper powder.

[0057] The light-emitting part 142 of the light-transmitting element 140 is correspondingly provided with the light-emitting chip 120, and the thickness of the light-emitting part 142 gradually decreases from the center to the edge. The light emitted by the light-emitting chip 120 is Lambertian. The greater the light intensity, the greater the thickness of the light-emitting part 142 that the light passes through, and the greater the energy loss of the light. Conversely, the light intensity is also greater. This makes the light emission of the light-emitting part 142 more uniform, weakens the glare phenomenon, and improves the uniformity of light emission.

[0058] It should be noted that the light-emitting part 142 is shaped like a convex lens as a light distribution part, and can play the role of focusing light. Therefore, the light-transmitting part 140 can be regarded as a lens. Its material can be, but is not limited to, silicone. Silicone has good light transmittance and is easy to mold and process.

[0059] When manufacturing the optical structure 130, a jig is used to transfer a batch of truncated structures 150 into an injection mold, so that the truncated structure 150 and the mold core in the injection mold are nested and fitted one by one. Each mold core fills a through hole 131 of the truncated structure 150. Then, glue is injected to batch form the light-transmitting element 140. At this time, each light-transmitting element 140 is directly formed on the truncated structure 150. When there is a gap between the mold core and the through hole 131, the glue will fill the gap, so that the light-transmitting element 140 covers at least part of the hole wall of the through hole 131, which improves the stability of the connection between the two, and does not affect the light-cutting effect of the truncated structure 150.

[0060] Please see Figure 2 , Figure 2A cross-sectional view of a semiconductor light-emitting device in the second embodiment of this application is shown. Compared with the optical structure 130 of the semiconductor light-emitting device 100 in the above embodiment, the light-transmitting element 140 of the semiconductor light-emitting device 100 in this embodiment further includes a light guide portion 180. The light guide portion 180 extends outward from the light-emitting portion 142 and extends into the through hole 131. The light guide portion 180 is gradually reduced in the extending direction.

[0061] Since the light guide 180 is inverted cone shape, its side can reflect the light emitted by the light-emitting chip 120 at a large angle. The reflected light enters the light-emitting part 142 and is emitted, avoiding the light from being absorbed by the cut-off structure 150, thus improving the light utilization rate and the brightness of the projected light spot.

[0062] Furthermore, the light guide portion 180 penetrates the through hole 131, extends into the groove 112, and is adapted to the through hole 131. Clearly, the smaller the distance between the light guide portion 180 and the light-emitting chip 120, the more light enters the light guide portion 180, and the more light enters the light-emitting portion 142 through the light guide portion 180, which is beneficial for further improving light utilization and the brightness of the projected light spot. In other embodiments, the substrate 110 is a substrate, and the support portion 141 is supported on the substrate. In this case, the height of the light guide portion 180 should be less than the sum of the heights of the support portion 141 and the light-emitting chip 120 to avoid interference between the light guide portion 180 and the light-emitting chip 120, and the cut-off structure 150 is adapted accordingly.

[0063] When fabricating the optical structure 130, a batch of light-transmitting elements 140 can be molded first. Then, black glue is poured into the space of the light-transmitting elements 140, covering the inner side of the support part 141 and part of the side of the light guide part 180, and also covering the end face of the support part 141, thus forming the truncated structure 150. The refractive index of the light-transmitting element 140 is greater than that of the black glue, meaning the refractive index of the light guide part 180 is greater than that of the truncated structure 150. Therefore, total internal reflection can occur at the interface between the two, preventing the light from being absorbed by the truncated structure 150.

[0064] Other aspects of the semiconductor light-emitting device 100 in this embodiment are basically the same as those in the above embodiments. For details, please refer to the description of the above embodiments, and will not be repeated here.

[0065] Please see Figure 3 , Figure 3A cross-sectional view of a semiconductor light-emitting device in the third embodiment of this application is shown. Compared with the optical structure 130 of the semiconductor light-emitting device 100 in the second embodiment, in this embodiment, the light-emitting portion 142 of the light-transmitting member 140 of the semiconductor light-emitting device 100 is provided with a protruding ring 190. The protruding ring 190 is located between the support portion 141 and the light guide portion 180, and forms a receiving groove 192 with the support portion 141. The cut-off structure 150 fills at least a portion of the receiving groove 192.

[0066] Since the light guide section 180 receives most of the light emitted by the light-emitting chip 120, the light emitted by the light-emitting chip 120 will not illuminate the convex ring 190, and the light illuminating the cut-off structure 150 is absorbed. Therefore, the light spot projected by the semiconductor light-emitting device 100 has good cutoff performance, high brightness, clear light-dark cutoff line, uniform light output, and no glare. Moreover, by setting the convex ring 190, a receiving groove 192 is formed between the convex ring 190 and the support section 141. With the help of the receiving groove 192, adhesive can be applied to the inner surface of the support section 141 to form the cut-off structure 150, which greatly saves materials, simplifies the process, and reduces costs.

[0067] Furthermore, the convex ring 190 is provided at the connection between the support portion 141 and the light-emitting portion 142, thereby shortening the inner surface of the support portion 141, making it easier to mold the cut structure 150 by dispensing. Moreover, the thickness of the portion of the cut structure 150 outside the receiving groove 192 gradually decreases in the direction toward the light-emitting chip 120, which is adapted to the Lambertian distribution of the light emission of the light-emitting chip 120, and can better absorb light.

[0068] The convex ring 190 is designed with a pointed tip and both sides are convex curved surfaces, which facilitates demolding.

[0069] When manufacturing the optical structure 130, a batch of light-transmitting parts 140 can be molded first. Then, a batch of nozzles are used to apply black glue. Each nozzle applies black glue to the inner side of the opening end of the support part 141 and can make a circular motion so that the black glue can cover the entire inner side under the action of gravity, thus forming the truncated structure 150.

[0070] As for the other aspects of the semiconductor light-emitting device 100 in this embodiment, they are basically the same as the other aspects of the semiconductor light-emitting device 100 in the second embodiment above. The specific content can be referred to the description of the second embodiment above, and will not be repeated here.

[0071] Please see Figure 4 , Figure 4A cross-sectional view of the semiconductor light-emitting device according to the fourth embodiment of this application is shown. Compared with the optical structure 130 of the semiconductor light-emitting device 100 in the first embodiment, the light-emitting portion 142 of the light-transmitting element 140 of the semiconductor light-emitting device 100 in this embodiment has a plurality of pyramidal portions 145 on its light-incident surface 143, each pyramidal portion 145 having at least three conical side surfaces 146. When the semiconductor light-emitting device 100 is not emitting light, the conical side surfaces 146 can be observed from the outside to be diamond-shaped, forming a diamond-like light-emitting effect, thus improving the static visual effect of the semiconductor light-emitting device 100. The light-emitting surface 144 is planar.

[0072] Furthermore, each pyramidal portion 145 is in the shape of a square pyramid, with a parallelogram base and four lateral pyramidal faces 146. In other embodiments, each pyramidal portion 145 may be in the shape of a triangular pyramid, a pentagonal pyramid, a hexagonal pyramid, or an octagonal pyramid, or multiple pyramidal portions 145 may be a combination of two or more of the above shapes, such as a combination of an octagonal pyramid and a square pyramid.

[0073] To achieve uniform light emission, the optical structure 130 also includes a light-diffusing adhesive layer 160. The light-diffusing adhesive layer 160 covers multiple pyramidal portions 145 and also covers part of the inner surface of the truncated structure 150. When light enters the light-diffusing adhesive layer 160, it is dispersed by the scattering particles therein. The scattered light is fully mixed, thus avoiding glare. No bright spot of the light source can be observed from the outside.

[0074] The scattering particles may include, but are not limited to, at least one of the following: SiO2, TiO2, ZnO, BaSO4, CaSO4, MgCO3, Al(OH)3, synthetic silica, glass beads, and diamond. The size of the scattering particles is suitable for the formation of scattered light; for example, the diameter of the scattering particles is 5 μm to 7 μm.

[0075] There are multiple light-emitting chips 120, and the center of the light-emitting part 142 is set corresponding to the geometric center of the multiple light-emitting chips 120. Specifically, the multiple light-emitting chips 120 are a combination of green LED chips (G) and blue LED chips (B), or a combination of red LED chips (R), green LED chips (G) and blue LED chips (B). The light-diffusing adhesive layer 160 can scatter different colors of light, so that the different colors of light are fully mixed and monochromatic light is avoided.

[0076] As for the other aspects of the semiconductor light-emitting device 100 in this embodiment, they are basically the same as the other aspects of the semiconductor light-emitting device 100 in the first embodiment above. The specific details can be referred to the description of the first embodiment above, and will not be repeated here.

[0077] Please see Figure 5 , Figure 5A cross-sectional view of the semiconductor light-emitting device in the fifth embodiment of this application is shown. Compared with the optical structure 130 of the semiconductor light-emitting device 100 in the fourth embodiment, the light-emitting part 142 of the light-emitting part 142 of the semiconductor light-emitting device 100 in this embodiment has a planar light-incident surface 143 and a plurality of protrusions 147 on the light-emitting surface 144. Each protrusion 147 is used to scatter the emitted light, and can also avoid glare and eliminate the bright spot of the light source by replacing the light-diffusing adhesive layer 160.

[0078] Furthermore, multiple protrusions 147 are arranged in an array and cover the entire light-emitting surface 144, and each protrusion 147 has a convex curved surface. Each protrusion 147 can be square, prismatic, ellipsoidal, spherical, hemispherical, or other shapes. In addition, only one LED chip is provided in the groove 112.

[0079] As for the other aspects of the semiconductor light-emitting device 100 in this embodiment, they are basically the same as the other aspects of the semiconductor light-emitting device 100 in the fourth embodiment above. The specific content can be referred to the description of the fourth embodiment above, and will not be repeated here.

[0080] Please see Figure 6 , Figure 6 A cross-sectional view of the semiconductor light-emitting device in the sixth embodiment of this application is shown. Compared with the optical structure 130 of the semiconductor light-emitting device 100 in the fourth embodiment, in this embodiment, the end of the cut-off structure 150, which is away from the light-emitting part 142, extends out from the other end of the support part 141 and is supported on the front of the bracket, while also serving to support the light-transmitting part 140. Since light cannot penetrate the cut-off structure 150, in order to save materials, the support part 141 can naturally be suspended and not supported by the bracket.

[0081] Because part of the outer surface of the cut structure 150 is exposed, the connection between the batch-formed cut structures 150 is not interfered with by the support 141. Therefore, the cut structure 150 can be embedded in the support 141 and fit tightly with the support 141, thereby realizing the assembly of the optical structure 130. In other words, the batch-formed cut structures 150 are matched one-to-one with the batch-formed light-transmitting elements 140 and inserted into them, and the two are tightly connected. Then, the cut structures 150 are batch-bonded onto a sheet of brackets. Finally, the connection between adjacent light-transmitting elements 140 and the connection between adjacent cut structures 150 are cut off simultaneously to obtain a single optical structure 130 located on the bracket.

[0082] To facilitate the insertion of the cut-off structure 150 into the support portion 141, an inlet surface 148 is provided on the inner edge of the other end of the support portion 141. The inlet surface 148 guides the insertion of the cut-off structure 150, thereby improving assembly efficiency. In other embodiments, to improve the airtightness of the connection between the cut-off structure 150 and the light-transmitting element 140, adhesive can be pre-applied to the inner surface of the support portion 141 or the outer surface of the cut-off structure 150, or sealant can be filled into the space formed between the inlet surface 148 and the outer surface of the cut-off structure 150.

[0083] The through-hole 131 includes a first segment 134 and a second segment 135 that are interconnected. The second segment 135 is disposed corresponding to the light-emitting part 142 and gradually increases in size in the direction toward the light-emitting part 142, thereby increasing the light emission angle of the semiconductor light-emitting device 100 and increasing the light-emitting surface 144. It should be noted that since the cut-off structure 150 is pre-injection molded, the shape of its through-hole 131 can be any shape that can be achieved by this molding method, such as hourglass shape, open shape, closed shape, etc.

[0084] The cut-off structure 150 is bonded to the support portion 141 via light-scattering adhesive 170, and the light-scattering adhesive 170 covers at least a portion of the hole wall of the second hole segment 135. The light-scattering adhesive 170 is filled with scattering particles, which not only scatter light to eliminate glare, but also seal the connection between the cut-off structure 150 and the light-transmitting element 140, preventing the light-transmitting element 140 from falling off and ensuring the airtightness of the connection.

[0085] Furthermore, the light-incident surface 143 of the light-emitting section 142 is planar and covered by light-scattering adhesive 170. The light-scattering adhesive 170 also covers the entire wall of the second aperture section 135 and a portion of the wall of the first aperture section 134, and fills at least a portion of the space between the guide surface 148 and the outer surface of the cut-off structure 150, thus forming a multi-layered sealing and bonding structure with better sealing and bonding effect, while avoiding adhesive overflow.

[0086] When assembling the optical structure 130, an appropriate amount of light-scattering adhesive 170 is added to the light-transmitting component 140, and then the cut-off structure 150 is embedded therein. The liquid light-scattering adhesive 170 is squeezed out, and part of the light-scattering adhesive 170 enters the space formed by the inlet surface 148 to avoid overflow.

[0087] As for the other aspects of the semiconductor light-emitting device 100 in this embodiment, they are basically the same as the other aspects of the semiconductor light-emitting device 100 in the fourth embodiment above. The specific content can be referred to the description of the fourth embodiment above, and will not be repeated here.

[0088] Please see Figure 7 , Figure 7A schematic diagram of a light-emitting device according to an embodiment of this application is shown. The light-emitting device 200 provided in this embodiment includes a circuit board 210 and a semiconductor light-emitting device 100, with the semiconductor light-emitting device 100 disposed on the circuit board 210. The specific structure of the semiconductor light-emitting device 100 is as described in the above embodiments. Since the light-emitting device 200 in this embodiment adopts all the technical solutions of all the above embodiments, it also has all the beneficial effects brought about by the technical solutions of the above embodiments, and will not be described in detail here. The number of semiconductor light-emitting devices 100 is multiple, and they are regularly arranged on the circuit board 210. In other embodiments, only one semiconductor light-emitting device 100 may be disposed on the circuit board 210.

[0089] The light-emitting device 200 is an illumination device, specifically, but not limited to, vehicle lights. In other embodiments, the light-emitting device 200 may also be a display device, a projection device, a security device, or other self-illuminating devices.

[0090] Furthermore, the vehicle lights can be, but are not limited to, interactive lights (ISD, Intelligent Sign Display), daytime running lights, ambient lights, or other vehicle lights.

[0091] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0092] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. An optical structure, characterized in that, include: A light-transmitting element (140) includes an integrally formed support portion (141) and a light-emitting portion (142). The support portion (141) is hollow, and the light-emitting portion (142) closes one end of the support portion (141). A cut-off structure (150) is provided to be opaque and has a through hole (131). The outer side of the cut-off structure (150) is provided to correspond to the inner side of the support part (141) and blocks all the inner sides of the support part (141) in the lateral direction. One end of the through hole (131) is provided to correspond to the light-emitting part (142). The outer side of the cut-off structure (150) is adapted to the inner side of the support portion (141), and the cut-off structure (150) is integrated on the inner side of the support portion (141) of the light-transmitting element (140). The light-transmitting element (140) further includes a light guide (180), which extends outward from the light-emitting part (142) and extends into the through hole (131). The light guide (180) is gradually reduced in size in the extending direction.

2. The optical structure according to claim 1, characterized in that, The truncated structure (150) is light-absorbing.

3. The optical structure according to claim 1 or 2, characterized in that, The light guide (180) passes through the through hole (131) and is adapted to the through hole (131).

4. The optical structure according to claim 1 or 2, characterized in that, The light-emitting part (142) has a protruding ring (190) protruding outward. The protruding ring (190) is located between the support part (141) and the light guide part (180), and forms a receiving groove (192) with the support part (141). The cut-off structure (150) fills at least a portion of the receiving groove (192).

5. The optical structure according to claim 4, characterized in that, The thickness of the portion of the cut-off structure (150) located outside the receiving groove (192) gradually decreases in the direction away from the light-emitting portion (142).

6. An optical structure, characterized in that, include: A light-transmitting element (140) includes an integrally formed support portion (141) and a light-emitting portion (142). The support portion (141) is hollow, and the light-emitting portion (142) closes one end of the support portion (141). A cut-off structure (150) is provided to be opaque and has a through hole (131). The outer side of the cut-off structure (150) is provided to correspond to the inner side of the support part (141) and blocks all the inner sides of the support part (141) in the lateral direction. One end of the through hole (131) is provided to correspond to the light-emitting part (142). The outer side of the cut-off structure (150) is adapted to the inner side of the support portion (141), and the cut-off structure (150) is integrated on the inner side of the support portion (141) of the light-transmitting element (140). The light-emitting part (142) has a light-incident surface (143) and a light-emitting surface (144); The light-incident surface (143) is provided with a plurality of pyramidal portions (145), each of the pyramidal portions (145) having at least three conical lateral surfaces (146); or The light-emitting surface (144) is provided with a plurality of protrusions (147), each of which is used to scatter the emitted light.

7. The optical structure according to claim 6, characterized in that, Also includes: A light-diffusing adhesive layer (160) covers the plurality of pyramidal portions (145) and a portion of the hole wall of the through hole (131).

8. The optical structure according to claim 6, characterized in that, The truncated structure (150) is light-absorbing.

9. An optical structure, characterized in that, include: A light-transmitting element (140) includes an integrally formed support portion (141) and a light-emitting portion (142). The support portion (141) is hollow, and the light-emitting portion (142) closes one end of the support portion (141). A cut-off structure (150) is provided to be opaque and has a through hole (131). The outer side of the cut-off structure (150) is provided to correspond to the inner side of the support part (141) and blocks all the inner sides of the support part (141) in the lateral direction. One end of the through hole (131) is provided to correspond to the light-emitting part (142). The outer side of the cut-off structure (150) is adapted to the inner side of the support portion (141), and the cut-off structure (150) is integrated on the inner side of the support portion (141) of the light-transmitting element (140). The cut-off structure (150) extends out from the end of the light-emitting part (142) relative to the other end of the support part (141); The through hole (131) includes a first hole segment (134) and a second hole segment (135) that are interconnected. The second hole segment (135) is provided corresponding to the light-emitting part (142) and is gradually enlarged in the direction toward the light-emitting part (142). The cut-off structure (150) is bonded to the support (141) by light scattering adhesive (170), and the light scattering adhesive (170) covers at least a portion of the hole wall of the second hole segment (135).

10. The optical structure according to claim 9, characterized in that, The truncated structure (150) is light-absorbing.

11. A semiconductor light-emitting device, characterized in that, include: Base (110); A light-emitting chip (120) is disposed on the substrate (110); as well as An optical structure (130) is an optical structure according to any one of claims 1 to 10. The optical structure (130) is disposed on the substrate (110) and surrounds the substrate (110) to form a sealed cavity (102). The light-emitting chip (120) is located in the cavity (102).

12. A light-emitting device, characterized in that, include: Circuit board (210); and A semiconductor light-emitting device (100) is disposed on the circuit board (210) and is the semiconductor light-emitting device (100) as described in claim 11.

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