Method for depositing two-dimensional layer and CVD reactor

Abstract

The invention relates to a method for depositing a two-dimensional layer on at least one substrate of a CVD reactor, in which a process gas is fed by means of a feed line into a gas distribution chamber of a gas inlet device having a first gas distribution chamber and at least one second gas distribution chamber, and in which the substrate is brought to a process temperature by means of a heating device. In a first step, an inert gas or a diluent gas is fed into a first gas distribution chamber, and a reactive gas is fed into a second gas distribution chamber, the reactive gas is pyrolytically decomposed in a processing chamber, the decomposition product forms a two-dimensional first layer, in a second step, a second layer is deposited above and / or next to the first layer, an inert gas or a diluent gas is fed into the second gas distribution chamber and a reactive gas containing elements of the two-dimensional second layer is fed into the first gas distribution chamber, the reactive gas or gas mixture being decomposed in the process chamber, the decomposition product forming the two-dimensional second layer.

Description

[0001] This application is a divisional application of the original application filed on October 30, 2020, with application number 202080090930.4 and invention title "Method for Depositing Two-Dimensional Layers and CVD Reactor". Technical Field

[0002] This invention relates to a method for depositing a two-dimensional layer onto a substrate in a CVD reactor, wherein process gas is fed into a gas distribution chamber of an inlet mechanism via an input line, the inlet mechanism having an exhaust opening that leads into a processing chamber, wherein the process gas or its decomposition products are introduced to the surface of the substrate in the processing chamber, and wherein the substrate is heated to a process temperature by means of a heating device, thereby causing the process gas to undergo a chemical reaction in the processing chamber such that a two-dimensional layer is deposited on the surface.

[0003] The present invention also relates to an apparatus having a CVD reactor for depositing a two-dimensional layer on a substrate, the CVD reactor having an inlet mechanism with an input conduit leading to a gas distribution chamber, a processing chamber, and a base for containing the substrate that can be heated by a heating device, wherein an exhaust opening of the gas distribution chamber leads into the processing chamber, wherein the input conduit is connected to a gas mixing system in which at least an inert gas source or a dilution gas source provides inert gas and at least one reactive gas source provides reactive gas having the following characteristics, which are introduced into the heated processing chamber and undergo a chemical reaction such that a two-dimensional layer is deposited on the substrate. The present invention also relates to an application of the CVD reactor for depositing a two-dimensional layer on a substrate. Background Technology

[0004] Document DE 102013111 791 A1 describes the deposition of two-dimensional layers using a CVD reactor, wherein the air intake mechanism is a showerhead. Graphene deposition via a CVD reactor is known from document WO 2017 / 029470 A1, where a showerhead is used as the air intake mechanism. CVD reactors are known from documents DE 102011 056589 Al, DE 102010016471 Al, DE102004007984 Al, DE 10 2009043840 Al, DE 112004001 026 T5, EP 1255876 B1, DE102005055468 Al, US 2006 / 0191637 Al, and DE 102011 002145 Al.

[0005] Document WO 2014 / 066100 A1 describes a shower head with a known exhaust surface, which has two exhaust zones.

[0006] Document US 2010 / 119727 describes a shower head having multiple overlapping gas distribution chambers. Summary of the Invention

[0007] The technical problem to be solved by the present invention is to provide a CVD reactor and a related method, through which multiple two-dimensional layers that are different from each other can be deposited adjacently, overlappingly or side by side.

[0008] The technical problem is solved by the invention given in the claims, wherein the dependent claims are not only advantageous extensions but also independent solutions to the technical problem.

[0009] The CVD reactor according to the invention has two volumes, which are separated from each other and each constitutes a gas distribution chamber. A first process gas can be fed into the first gas distribution chamber. The process gas can be a mixture of multiple, for example, two reactive gases. Preferably, the process gas can be only one reactive gas. The first reactive gas can be used to deposit a two-dimensional first layer. A second gas distribution chamber is designed to allow a second process gas to be fed into the second gas distribution chamber for the deposition of a two-dimensional second layer. The second process gas is different from the first process gas and can be composed of multiple reactive gases. Preferably, the second process gas can be composed of only one reactive gas. During the deposition of a multilayer structure, different process gases, especially only one reactive gas, or mixtures of multiple, especially two reactive gases, are sequentially fed into one gas distribution chamber and the other gas distribution chambers. Preferably, only one of the multiple gas distribution chambers is fed into the process gas. A dilution gas is fed into the other gas distribution chambers of the multiple gas distribution chambers, which can be an inert gas, such as a rare gas, such as argon, or a reducing gas, such as hydrogen. In the method according to the invention, the inlet mechanism has at least two separate gas distribution chambers, each capable of being supplied with different gases or gas mixtures via inlet lines. However, the apparatus may also have two or more gas distribution chambers, each supplied via inlet lines. Gases simultaneously exit from different exhaust openings corresponding to the gas distribution chambers. The CVD reactor according to the invention may have vertically arranged, sequentially positioned gas distribution chambers extending over the entire exhaust surface of the inlet mechanism. The exhaust surface may have a disc-shaped form and uniformly distributed exhaust openings. Each exhaust opening connects to a different gas distribution chamber, wherein each opening is fluidly connected to only one gas distribution chamber. Process gases can flow through the exhaust openings into the processing chamber of the CVD reactor, where a chemical reaction occurs to deposit a two-dimensional layer on the surface of a substrate, which may be a sapphire substrate or a silicon substrate. Each gas distribution chamber is fluidly connected to the exhaust surface via multiple exhaust openings, wherein the exhaust openings are arranged substantially uniformly on the exhaust surface. According to a first variation of the invention, an inert gas or diluent gas is fed into a first gas distribution chamber and a reactive gas is fed into a second gas distribution chamber. The reactive gas is decomposed in a processing chamber by pyrolysis or other means, particularly by energy input, wherein the decomposition products form a two-dimensional layer on a substrate. In a second alternative of the invention, other reactive gases may be fed into the gas distribution chambers separately. The reactive gases can chemically react with each other in the gas distribution chambers and form a two-dimensional layer. In the first alternative, graphene or hBN is preferably deposited, wherein methane or borazine is used as the reactive gas.In a second alternative to the method, a transition metal gas, such as tungsten or molybdenum, can be fed into one of the gas distribution chambers. A Group 6 gas, such as sulfur, selenium, or tellurium, can be fed into a second gas distribution chamber. The two-dimensional layer can be a transition metal chalcogenide. In a preferred design, the CVD reactor has an exhaust plate pointing towards the processing chamber, the exhaust plate being adjacent to a cooling chamber on its back side, through which a cooling medium can flow. A first gas distribution chamber can be located above the cooling chamber, and a first gas is fed into the first gas distribution chamber. The gas distribution chamber is connected to the exhaust surface of the exhaust plate of the inlet mechanism via a small pipe intersecting the cooling chamber. The first and second small pipes alternate laterally, wherein the first small pipe connects the first gas distribution chamber to the exhaust surface, and the second small pipe intersects both the cooling chamber and the first gas distribution chamber and connects the second gas distribution chamber, which is located above the first gas distribution chamber, to the exhaust plate. However, the exhaust mechanism can also have a design as described in documents DE 102013101534 Al, DE 102009043840 Al, or DE102007026349 Al. The contents of these documents are therefore fully incorporated herein by reference. The bottom of the processing chamber is formed by a base, which can be heated to a process temperature preferably exceeding 1000°C by a heating device. Alternatively, a mixture of reactive gases can be fed into one of the gas distribution chambers to deposit, for example, tungsten sulfide. The gas mixture can consist of tungsten hexacarbonyl W(CO)6 and di-tert-butyl sulfide S(C4H9)2. In one embodiment, a multilayer structure is deposited on a sapphire substrate, wherein the multilayer structure comprises at least one or more layers of hexagonal boron nitride (hBN) with a thickness of, for example, 5 nm. One or more graphene layers (multilayer graphene) can be deposited on top of each other. An hBN layer with a thickness of, for example, 3 nm can be deposited on the graphene layer. Attached Figure Description

[0010] Embodiments of the present invention are described below with reference to the accompanying drawings. In the drawings:

[0011] Figure 1 The CVD reactor 1 with its associated gas mixing system is schematically shown, and

[0012] Figure 2 It shows Figure 1 Local II in the middle. Detailed Implementation

[0013] The accompanying drawing shows a CVD reactor 1, which has an airtight shell and an inlet mechanism 2 located within the shell. A processing chamber 3 is located below the inlet mechanism 2, and the bottom of the processing chamber forms a base 5, which can be made of graphite or coated graphite. The base 5 can be heated from below by means of a heating device 6. The heating device can be a resistance heater, an infrared heating device, or an induction radio frequency heating device. An exhaust mechanism 7 extends around the base 5, which has a circular base profile, and a vacuum pump (not shown) is connected to the exhaust mechanism 7. The exhaust mechanism 7 may surround the base 5.

[0014] The base 5 has a support surface 15 on the upper side facing the processing chamber 3, and the substrate 4 is placed on the support surface. The substrate can be made of sapphire, silicon, metal, etc.

[0015] The air intake mechanism 2 has the shape of a shower head. Within the air intake mechanism 2, the cooling chamber 8 is located between the exhaust plate 9 and the intermediate plate 23. Above the air intake mechanism 8, the gas distribution chamber 21 is located between the intermediate plate 23 and the intermediate plate 13. Other gas distribution chambers 11 are located between the intermediate plate 13 and the top plate 16.

[0016] The input line 20 leads into the gas distribution chamber 21, allowing gas to be fed from outside the CVD reactor into the input line. The input line 10 leads into the gas distribution chamber 11, allowing gas to be fed from outside the CVD reactor 1 into the input line.

[0017] The gas distribution chamber 11 is connected to the processing chamber 3 by means of a plurality of small pipes 12 evenly distributed on the exhaust surface 25 of the exhaust plate 9. The small pipes 12 lead into the exhaust openings 14, through which the gas fed into the gas distribution chamber 11 can flow into the processing chamber 3.

[0018] The gas distribution chamber 21 is connected to the exhaust surface 25 via a plurality of small tubes 22, so that the gas fed into the gas distribution chamber 21 can flow into the processing chamber through the exhaust openings 24 corresponding to the small tubes 22.

[0019] The inlet pipe 8' leads into the cooling chamber 8, through which coolant can be fed into the cooling chamber 8. The coolant can then flow out of the cooling chamber 8 again from the inlet pipe 8'.

[0020] Reference numeral 19 indicates a pyrometer, through which the surface of the substrate 4 can be observed during growth to determine the surface temperature. The optical path 18 of the pyrometer 19 extends through a wavelength-transparent window 17 in the top plate 16 and through one of the small tubes 12'.

[0021] The gas mixing system has a control device 29, which may be a control computer. The control device 29 can control different mass flow regulators 30, 30'; 37, 37'; 41, 41'. The control device 29 can also regulate the temperature of a temperature-controlled tank (constant temperature tank), in which sources of liquid or solid raw materials 32, 32' are located, and these sources are designed as bubblers 32, 32'. Reference numerals 31, 31' indicate concentration measuring devices, which can determine the concentration of vapor in the carrier gas flow. Reference numerals 39, 39' indicate inert gas sources or diluent gas sources, which provide inert gases or diluent gases, such as rare gases or reducing gases, such as hydrogen, or mixtures of these gases. Reference numerals 40, 40' indicate sources of reactive gases, such as methane or other hydrocarbons.

[0022] Reference numerals 33 and 33' indicate switching valves, which allow the steam generated in the bubblers 32 and 32' and transported by the carrier gas to either enter the outlet line 35 and be guided past the CVD reactor 1, or be fed into the input lines 10 and 20 through the operating lines 34 and 34'.

[0023] Reactive gas can be generated by bubblers 32, 32'. For this purpose, inert gas or diluent gas is fed from gas sources 39, 39' to bubblers 32, 32' via mass flow regulators 30, 30'. The vapor concentration in the carrier gas stream can be measured downstream by concentration measuring devices 31, 31'. Before being fed into the inlet mechanism 2, the reactive gas is introduced into outlet valve 35 until the gas flow stabilizes. To begin depositing a two-dimensional layer, switching valves 33, 33' are switched, allowing a stable gas flow to be fed into gas distribution chambers 11, 21 via operating lines 34, 34'. Two sources are shown in the embodiment, through which reactive gas can be generated from powder or liquid, respectively. Multiple such sources can be provided in embodiments not shown.

[0024] If no reactive gas is fed into one of the gas distribution chambers 11, 21, inert gas or dilution gas can be fed from the inert gas source or dilution gas source 39 to the gas distribution chambers 11, 21 via valves 36, 36' and mass flow controllers 37, 37'.

[0025] Alternatively, usable raw materials in a gaseous state, such as methane or other hydrocarbons, can be obtained from gas sources 40, 40' and fed into gas distribution chambers 11, 21 by means of mass flow regulators 41, 41'. If borazine is provided above its boiling point, it can be provided via a gas source. Otherwise, borazine can be provided as a gas or vapor by bubblers 32, 32'.

[0026] To deposit multilayer structures, reactive gases or mixtures of two reactive gases are alternately fed into one of the gas distribution chambers 11, 21, and inert or diluent gases are fed into the other gas distribution chambers 11, 21. For example, multilayer structures composed of hBN and graphene can be deposited sequentially by switching between borazine and methane streams. One or more graphene layers can be embedded between two hBN layers, particularly monolayers. Alternatively, lateral heterostructures can be deposited, wherein different two-dimensional layers are deposited laterally adjacent to each other on the substrate surface or the surface of already deposited layers. Adjacent layers can be interconnected.

[0027] Alternatively, the first raw material can be fed into the first gas distribution chamber of gas distribution chambers 11 and 21, and the second raw material can be fed into the second gas distribution chamber of gas distribution chambers 11 and 21. Alternatively, a process gas can be fed into one of the gas distribution chambers, the process gas being a mixture of two reactive gases. One of the reactive gases can be, for example, tungsten hexacarbonyl, which can be provided by bubblers 32 and 32'. The other reactive gases can be sulfur compounds, tellurium compounds, or selenium compounds. Therefore, the starting material can be fed into different gas distribution chambers 11 and 21 or into the same gas distribution chamber 11 and 21.

[0028] This invention relates to all material pairs mentioned in patent document DE 102013111791 A1. Therefore, the disclosure of that patent document is fully incorporated in this application.

[0029] The foregoing embodiments are used to illustrate the invention generally included in this application, which extends the prior art independently by at least the following combinations of features, wherein two, more, or all of these combinations of features can also be combined, namely:

[0030] A method characterized in that the air intake mechanism 2 has at least two separate gas distribution chambers 11 and 21, which are fed with different gases or gas mixtures through input pipes 10 and 20, respectively, and the gases or gas mixtures simultaneously flow out from different exhaust openings 14 and 24 corresponding to one of the gas distribution chambers 11 and 21, respectively.

[0031] An application characterized in that the air intake mechanism 2 has at least two separate gas distribution chambers 11 and 21, which are fed with different gases or gas mixtures through input pipes 10 and 20, respectively, and the gases or gas mixtures simultaneously flow out from different exhaust openings 14 and 24 corresponding to one of the gas distribution chambers 11 and 21, respectively.

[0032] A method or application characterized in that an inert gas or diluting gas is fed into a first gas distribution chamber of gas distribution chambers 11 and 21, and a reactive gas or a gas mixture containing elements constituting a two-dimensional layer is fed into a second gas distribution chamber of gas distribution chambers 11 and 21, wherein the reactive gas is decomposed, for example, by pyrolysis, in a processing chamber 3, wherein the decomposition products form a two-dimensional layer, or reactive gases that are different from each other are fed into gas distribution chambers 11 and 21, wherein the reactive gases undergo a chemical reaction with each other in the processing chamber 3 and form a two-dimensional layer.

[0033] A method or application characterized in that, in a second step, a two-dimensional second layer is deposited on a two-dimensional first layer deposited in the first step; during the deposition of the two-dimensional first layer, an inert gas or diluent gas is fed into a processing chamber through a first gas distribution chamber 11 and an exhaust opening 14 corresponding to the first gas distribution chamber; and a first reactive gas or a gas mixture containing, in particular, elements having a two-dimensional layer is fed into the processing chamber through a second gas distribution chamber 21 and an exhaust opening 24 corresponding to the second gas distribution chamber; during the deposition of the two-dimensional second layer, a second reactive gas different from the first reactive gas is fed through the first gas distribution chamber 1 and an exhaust opening 14 corresponding to the first gas distribution chamber; and an inert gas or diluent gas is fed into the processing chamber through the second gas distribution chamber 21 and an exhaust opening 24 corresponding to the second gas distribution chamber; wherein, in particular, it is specified that the two steps are repeated once or multiple times.

[0034] A method or application characterized by depositing two-dimensional layers that are different from each other in a plurality of sequentially overlapping steps, wherein the reactive gas used herein is fed, in particular, alternately into gas distribution chambers 11, 21 that are different from each other.

[0035] An apparatus characterized in that the air intake mechanism 2 has two separate gas distribution chambers 11 and 21, each having an input pipe 10 and 20, wherein each of the two input pipes 10 and 20 is selectively fluidly connected to an inert gas source, a dilution gas source, or one of the reactive gas sources.

[0036] A method, application, or device is characterized by providing switching devices 33, 33'; 36, 36'; 38, 38', through which an inert gas source or dilution gas source 39, 39' or one of the reactive gas elements 32, 32'; 40, 40' is selectively or alternately fluidly connected to a gas distribution chamber 11, 21.

[0037] A method, application, or device characterized in that the reactive gas sources 32, 32' can be selectively or alternately connected to the outlet pipeline 35 or the operating pipeline 34, 34', the reactive gas flows past or is guided past the processing chamber 3 via the outlet pipeline, and the reactive gas can be introduced into the processing chamber 3 via the operating pipeline.

[0038] A method, application, or device characterized in that the air intake mechanism 2 is a shower head with an exhaust surface 25, an exhaust opening 14 is arranged in the exhaust surface 25, and two gas distribution chambers 11 and 21 separated from each other by an intermediate plate 13 are arranged in the air intake mechanism. The gas distribution chambers are fluidly connected to the exhaust openings 14 and 24 uniformly distributed on the exhaust surface 25 by small tubes 12, 12', and 22, respectively, and / or the material of the two-dimensional layer is graphene, hBN, or a transition metal dichalcogenide, especially MoS2, WS2, MoSe2, or WSe2 and / or the reactive gas or reactive gas mixture contains a carbon compound, such as methane, or a boron compound, such as borazine and / or the first reactive gas is a transition metal element, especially a molybdenum compound or a tungsten compound, and the second reactive gas contains a group VI element, especially a sulfur compound, such as di-tert-butyl sulfide, a selenium compound, or a tellurium compound and / or the inert gas is a rare gas, such as argon, and the diluent gas is a reducing gas, such as hydrogen.

[0039] All disclosed features (as individual features or combinations thereof) are essential to the invention. Therefore, the disclosure of this application also includes the full content disclosed in the relevant / attached priority documents (copies of earlier applications), and for this purpose, the features of the priority documents are also incorporated into the claims of this application. Dependent claims, even if they do not possess the features of the cited claims, demonstrate independent, inventive extensions to the prior art by virtue of their features, and divisional applications can be filed based on these dependent claims in particular. The invention given in each claim may additionally have one or more features given in particular in the foregoing description and / or in the list of reference numerals. The invention also relates to various design options in which certain features mentioned in the foregoing description are not implemented, especially when they are considered irrelevant to the corresponding purpose of use or can be replaced by other means that achieve the same technical effect.

[0040] List of reference numerals

[0041] 1CVD reactor

[0042] 2 intake mechanism

[0043] 3 Processing Room

[0044] 4 substrates

[0045] 5 bases

[0046] 6 Heating devices

[0047] 7 exhaust components

[0048] 8 cooling chambers

[0049] 8' Input Pipeline

[0050] 8" output piping

[0051] 9 exhaust plates

[0052] 10 Inlet Pipes

[0053] 11 Gas Distribution Room

[0054] 12 tubes

[0055] 12" tube

[0056] 13 intermediate plates

[0057] 14 exhaust openings

[0058] 15 Support Surface

[0059] 16 top plates

[0060] 17 windows

[0061] 18 optical paths

[0062] 19 Optical equipment, pyrometer

[0063] 20 Inlet Pipes

[0064] 21 Gas Distribution Room

[0065] 23 Intermediate Plate

[0066] 24 exhaust openings

[0067] 25 exhaust surface

[0068] 29 Control Devices

[0069] 30 Mass Flow Controller

[0070] 30' Mass Flow Controller

[0071] 31 Concentration measuring equipment

[0072] 31" Concentration Measurement Equipment

[0073] 32 Aerator

[0074] 32" Aerator

[0075] 33 Switching Valve

[0076] 33' Switching Valve

[0077] 34 Operating Piping

[0078] 34' Operating Piping

[0079] 35 Outlet Pipeline

[0080] 37 Mass Flow Controller

[0081] 37´ Mass Flow Controller

[0082] 39 Inert gas source

[0083] 39' Inert Gas Source

[0084] 40 Reactive Gas Source

[0085] 40' reactive gas source

[0086] 41 Mass Flow Controller

[0087] 41" Mass Flow Controller

[0088] T P Process temperature

Claims

1. An apparatus for depositing a heterostructure having a two-dimensional first layer and a second layer on a substrate (4), wherein, The layers are different from each other, and the device includes: A chemical vapor deposition (CVD) reactor (1), comprising a processing chamber (3), An intake mechanism (2) is provided, wherein the intake mechanism (2) includes a first gas distribution chamber (11) and a second gas distribution chamber (21) separate from the first gas distribution chamber (11), wherein the first and second gas distribution chambers (11, 21) are arranged vertically in sequence, and a corresponding exhaust opening (14) fluidly connected to the first gas distribution chamber (11) and a corresponding exhaust opening (24) fluidly connected to the second gas distribution chamber (21) are uniformly arranged on the entire exhaust surface (25) of the intake mechanism (2); At least one first bubbler (32) is configured to deliver a first transition metal compound and a first reactive gas source is configured to deliver a first reactive gas containing a Group VI element, wherein the first transition metal compound is capable of reacting with the first reactive gas to form a two-dimensional first layer of a first metal dichalcogenide on the substrate. At least one second bubbler (32') is configured to deliver a second transition metal compound and a second reactive gas source is configured to deliver a second reactive gas containing a Group VI element, wherein the second transition metal compound is capable of reacting with the second reactive gas to form a two-dimensional second layer of a second metal dichalcogenide on the substrate. An inert gas source (39, 39') is provided for supplying inert gas; The first and second switching devices are configured to alternately connect the first and second bubblers (32, 32') to the outlet pipe (35) or to the first and second operating pipes (34, 34'), respectively, through which the first or second transition metal compound can be guided past the processing chamber (3), and through the first and second operating pipes, the first and second transition metal compounds can be introduced into the corresponding first or second gas distribution chambers (11, 21). and a control unit (29) configured to control the switching valves (33, 33') of the first and second switching devices.

2. The apparatus according to claim 1, wherein, The control unit (29) is configured to perform the following process steps: In the first step, the first transition metal compound is fed into the first gas distribution chamber (11), and the first reactive gas is fed into the second gas distribution chamber (21), wherein the substrate (4) is heated to the process temperature, thereby forming a two-dimensional first layer on the surface of the substrate (4), the two-dimensional first layer being a first metal dichalcogenide; and In the second step, the inert or diluting gas is fed into the second gas distribution chamber (21), and the second reactive gas is fed into the first gas distribution chamber (11), wherein the substrate (4) is heated to the process temperature, thereby forming a two-dimensional second layer on the surface of the substrate (4), the two-dimensional second layer being a second metal dichalcogenide.

3. A method for depositing a heterostructure having a two-dimensional first layer and a second layer on a substrate (4) using the apparatus according to claim 1, wherein, The layers are different from each other, and the method includes: In the first step, the first transition metal compound is fed into the first gas distribution chamber (11), and the first reactive gas is fed into the second gas distribution chamber (21), wherein the substrate (4) is heated to the process temperature, thereby forming a two-dimensional first layer on the surface of the substrate (4), the two-dimensional first layer being a first metal dichalcogenide; and In the second step, the inert or diluting gas is fed into the second gas distribution chamber (21), and the second reactive gas is fed into the first gas distribution chamber (11), wherein the substrate (4) is heated to the process temperature, thereby forming a two-dimensional second layer on the surface of the substrate (4), the two-dimensional second layer being a second metal dichalcogenide.

4. An apparatus for depositing a heterostructure having a two-dimensional first layer and a second layer on a substrate (4), wherein, The layers are different from each other, and the device includes: A chemical vapor deposition (CVD) reactor (1), comprising a processing chamber (3), An intake mechanism (2) is provided, comprising a first gas distribution chamber (11) and a second gas distribution chamber (21) separate from the first gas distribution chamber (11), wherein the first and second gas distribution chambers (11, 21) are arranged vertically in sequence, and corresponding exhaust openings (14) fluidly connected to the first gas distribution chamber (11) and corresponding exhaust openings (24) fluidly connected to the second gas distribution chamber (21) are uniformly arranged on the entire exhaust surface (25) of the intake mechanism (2); At least one first reactive gas source (40) is provided for delivering a first reactive gas, wherein the first reactive gas is a hydrocarbon; A second reactive gas source (40') is configured to deliver a second reactive gas, which is borazine; An inert gas source (39, 39') is provided for supplying inert or diluting gases; And a control unit (29) configured to control valves (38, 38').

5. The apparatus according to claim 4, wherein the control unit (29) is configured to perform the following process steps: In the first step, the inert or diluting gas is fed into the first gas distribution chamber (11), and the first reactive gas is fed into the second gas distribution chamber (21), wherein, The substrate (4) is heated to the process temperature, thereby forming a two-dimensional first layer on the surface of the substrate (4) by the decomposition products of the first reactive gas, the two-dimensional first layer being graphene. as well as In the second step, the inert or diluting gas is fed into the second gas distribution chamber (21), and the second reactive gas is fed into the first gas distribution chamber (11), wherein the substrate (4) is heated to the process temperature, thereby forming a two-dimensional second layer on the surface of the substrate (4) by the decomposition products of the second reactive gas, the two-dimensional second layer being hBN.

6. A method for depositing a heterostructure having a two-dimensional first layer and a second layer on a substrate (4) using the apparatus according to claim 4, wherein, The layers are different from each other, and the method includes: In the first step, the inert or diluting gas is fed into the first gas distribution chamber (11), and the first reactive gas is fed into the second gas distribution chamber (21), wherein the substrate (4) is heated to the process temperature, thereby forming a two-dimensional first layer on the surface of the substrate (4) by the decomposition products of the first reactive gas, the two-dimensional first layer being graphene; and In the second step, the inert or diluting gas is fed into the second gas distribution chamber (21), and the second reactive gas is fed into the first gas distribution chamber (11), wherein the substrate (4) is heated to the process temperature, thereby forming a two-dimensional second layer on the surface of the substrate (4) by the decomposition products of the second reactive gas, the two-dimensional second layer being hBN.

7. An apparatus for depositing a heterostructure having a two-dimensional first layer and a second layer on a substrate (4), wherein, The layers are different from each other, and the device includes: A chemical vapor deposition (CVD) reactor (1), comprising a processing chamber (3), An intake mechanism (2) is provided, comprising a first gas distribution chamber (11) and a second gas distribution chamber (21) separate from the first gas distribution chamber (11), wherein the first and second gas distribution chambers (11, 21) are arranged vertically in sequence, and corresponding exhaust openings (14) fluidly connected to the first gas distribution chamber (11) and corresponding exhaust openings (24) fluidly connected to the second gas distribution chamber (21) are uniformly arranged on the entire exhaust surface (25) of the intake mechanism (2); At least one first gas source (33, 40) is configured to deliver a first reactive gas; A second reactive gas source (33', 40') is configured to deliver a second reactive gas; An inert gas source (39, 39') is provided for supplying inert or diluting gases; The first and second gas sources (33, 40, 33', 40') are configured to transport reactive gases, which form metal dichalcogenides, graphene, or hBN in a chemical reaction.

8. The apparatus according to claim 7, wherein, At least one of the first and second gas sources (33, 40, 33', 40') includes a bubbler (32, 32') configured to deliver a transition metal compound.

9. The apparatus according to claim 8, wherein, The bubbler (32) contains a molybdenum compound or a tungsten compound.

10. The apparatus according to claim 7, the apparatus comprising first and second switching devices, the first and second switching devices being configured to alternately connect a first bubbler (32) configured for conveying a first transition metal compound and a second bubbler (32, 32') configured for conveying a second transition metal compound to an outlet line (35) or to first and second running lines (34, 34'), wherein the first or second transition metal compound can be guided past the processing chamber (3) through the outlet line (35), and the first and second transition metal compounds can be introduced into the corresponding first or second gas distribution chambers (11, 21) through the first and second running lines (34, 34'), the apparatus further comprising a control unit (29), the control unit being configured to control the valves (38, 38') of the first and second switching devices.

11. The apparatus according to claim 7, wherein, At least one of the first and second gas sources (33, 40, 33', 40') is configured to deliver hydrocarbons or borazine.

12. The apparatus according to claim 1, wherein, The first bubbler (32) contains a molybdenum compound.

13. The apparatus according to claim 1, wherein, The second bubbler (32') contains a tungsten compound.

14. The apparatus according to claim 1, wherein, The first bubbler (32) contains a molybdenum compound, and the second bubbler (32') contains a tungsten compound.

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