Silicon carbide crystal growth process based on liquid phase method and pre-pressing equipment

Abstract

The present application belongs to the field of silicon carbide single crystal growth, and particularly relates to silicon carbide crystal growth based on a liquid phase method, and more particularly to a silicon carbide crystal growth process based on a liquid phase method and a pre-pressing device. The silicon carbide crystal growth process based on the liquid phase method compacts the ingredients by the pre-pressing device, thereby reducing the porosity between the ingredients, reducing the total amount of gas bubbles released during the melting process of the ingredients, and improving the stability of crystal growth. Meanwhile, the ingredients are compacted, the height of the crucible is reduced, the distance of the crucible from the solution surface is reduced, the crucible and the solution as a whole are in a high-temperature zone, heat exchange with a low-temperature zone is reduced, heat loss is avoided, the stability of the temperature gradient of the growth interface is ensured, and the stability of crystal growth is further improved.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of silicon carbide single crystal growth, and particularly relates to silicon carbide crystal growth based on a liquid phase method, and in particular to a silicon carbide crystal growth process based on a liquid phase method and a pre-pressing device. BACKGROUND

[0002] In the liquid phase growth process of the silicon carbide single crystal, the solid raw materials need to be melted into a liquid phase in a crucible for subsequent pulling growth of the silicon carbide crystal.

[0003] In the related art, when the raw materials are loaded into the crucible, there are a large number of pores between the raw materials, and the gas in the pores will be released into the solution during melting of the raw materials to form bubbles, thereby affecting the stability of the crystal growth, making the crystal surface uneven, increasing the internal defects, and even forming polycrystalline clusters, and reducing the stability of the crystal growth. At the same time, in order to avoid overflow of the solution during the melting process, the height of the crucible needs to be higher than the height of the unmelted raw materials, and the melted solution is far below the height of the crucible, and the part of the crucible wall that is higher will interfere with the temperature gradient of the growth interface, causing the solution at the edge of the crucible to be supersaturated, and causing the precipitation of impurity crystals, thereby reducing the stability of the crystal growth.

[0004] Therefore, how to meet the melting demand of the raw materials while reducing the influence of the crucible wall on the stability of the crystal growth is a technical problem to be solved at present.

[0005] It should be noted that the above information disclosed in the background section of the present application is only used to understand the background of the present application, and therefore, the above description is not considered to constitute prior art information. SUMMARY

[0006] The present application provides at least a silicon carbide crystal growth process based on a liquid phase method and a pre-pressing device.

[0007] In a first aspect, the present application provides a silicon carbide crystal growth process based on a liquid phase method, which comprises:

[0008] pre-pressing the raw materials by the pre-pressing device;

[0009] releasing the adhesion of the pressed raw materials to the inner cavity of the pre-pressing device by the pushing plate;

[0010] taking out the pressed raw materials;

[0011] putting the raw materials into a crucible that is adapted to the height of the solution after melting of the raw materials;

[0012] putting the crucible into a silicon carbide crystal growth furnace for silicon carbide crystal growth.

[0013] In an alternative embodiment, the disengagement of the compacted material from the inner cavity of the pre-pressing device by the pushing disc includes:

[0014] The pushing disc ascends and drives the alloy shell of the pre-pressing device to rotate, so that the inner cavity of the pre-pressing device is relatively rotated with the compacted material;

[0015] The pushing disc ascends and drives the compacted material to ascend, and the compacted material is pushed out of the inner cavity of the pre-pressing device.

[0016] In an alternative embodiment, the step of placing the material into the crucible with a height adapted to the height of the solution after melting of the material includes that the height of the crucible with a height adapted to the height of the solution after melting of the material is h;

[0017] The height h of the crucible is obtained in the following way:

[0018] The height H of the solution after melting of the material is obtained;

[0019] The height h of the crucible is the sum of a preset difference a and the height H of the solution after melting.

[0020] Wherein, h, H and a are in mm.

[0021] In an alternative embodiment, the height H of the solution after melting of the material is obtained in the following way:

[0022] The total mass m of the material is obtained;

[0023] The density p of the solution after melting of the material is obtained;

[0024] H = m / (ps);

[0025] In the formula, s is the area of the crucible.

[0026] In an alternative embodiment, the step of placing the material into the crucible with a height adapted to the height of the solution after melting of the material includes that the height of the crucible with a height adapted to the height of the solution after melting of the material is h;

[0027] The height h of the crucible is obtained in the following way:

[0028] The total mass m of the material is obtained;

[0029] The total mass m is input into a database previously constructed to associate mass and height of solution, and the height H of the solution after melting of the material corresponding to the total mass m is obtained;

[0030] The height h of the crucible is the sum of a preset difference a and the height H of the solution after melting.

[0031] In an alternative embodiment, before the material is pre-pressed by the pre-pressing device, the process further includes:

[0032] The material is subjected to a crushing treatment;

[0033] The particle size of the crushed ingredients is between 0.5 mm and 2 mm.

[0034] In a second aspect, the disclosure also provides a pre-pressing device for a liquid phase method-based silicon carbide crystal growth process, comprising:

[0035] a mold body provided with a cylindrical inner cavity, and the top of the inner cavity is open;

[0036] a hydraulic assembly arranged at the top of the mold body;

[0037] a push plate arranged at the bottom of the inner cavity, and the push rod of the push plate is connected with an external driving member after passing through the inner cavity;

[0038] When the push plate rises, it drives the mold body to rotate to release the adhesion of the compacted ingredients to the inner cavity of the mold body.

[0039] In an alternative embodiment, the hydraulic assembly comprises:

[0040] a pressing plate connected with an external hydraulic cylinder through a pressing rod;

[0041] a graphite disc bonded to the bottom surface of the pressing plate;

[0042] wherein the graphite disc extends a plurality of limiting protrusions in the axial direction towards the inner cavity to prevent the compacted ingredients from rotating with the mold body.

[0043] In an alternative embodiment, the side surface of the push plate is provided with a plurality of sliding columns at intervals in the circumferential direction;

[0044] the mold body is provided with an arc-shaped chute at the position corresponding to the sliding columns;

[0045] When the push plate rises, it drives the mold body to rotate through the cooperation of the sliding columns and the arc-shaped chute.

[0046] In an alternative embodiment, the mold body comprises:

[0047] a graphite inner liner;

[0048] an alloy shell arranged outside the graphite inner liner;

[0049] and the alloy shell comprises an outer shell and a bottom disc;

[0050] the alloy shell is arranged on the graphite inner liner;

[0051] the bottom disc is threadedly connected with the outer shell to fix the graphite inner liner.

[0052] The beneficial effects of the present application are that the silicon carbide crystal growth process and pre-pressing device based on liquid phase method, by pre-pressing device compaction of ingredients, thereby reducing the porosity between the ingredients, thereby reducing the total amount of gas release bubble in the process of melting ingredients, thereby improving the stability of crystal growth, at the same time, by compaction of ingredients, the height of the crucible is reduced, thereby reducing the distance of the crucible from the solution surface, so that the crucible and the solution as a whole are in the high temperature zone, reducing the heat exchange with the low temperature zone, thereby avoiding heat loss, ensuring the stability of the temperature gradient of the growth interface, further improving the stability of crystal growth.

[0053] Other features and advantages of the present application will be set forth in the following description, and in part will become apparent to those skilled in the art from the description, or can be learned by practice of the present application. The objects and other advantages of the present application will be realized and attained by the structure particularly pointed out in the description and the drawings.

[0054] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the preferred embodiments are described in detail below, and the accompanying drawings are described as follows. BRIEF DESCRIPTION OF DRAWINGS

[0055] In order to more clearly illustrate the specific embodiments of the present application or the technical solutions in the prior art, the following will briefly introduce the drawings needed to be used in the specific embodiments or prior art description. Obviously, the drawings described below are some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor on the basis of these drawings.

[0056] Figure 1 The flow chart of the silicon carbide crystal growth process based on liquid phase method provided by the embodiments of the present disclosure is provided.

[0057] Figure 2 The cross-sectional view of the pre-pressing device provided by the embodiments of the present disclosure is provided.

[0058] Figure 3 The cross-sectional view of the pre-pressing device provided by the embodiments of the present disclosure is provided.

[0059] Figure 4 The exploded view of the pre-pressing device provided by the embodiments of the present disclosure is provided.

[0060] Figure 5 The distance from the seed crystal center to the edge and the temperature change curve provided by example 1 and comparative example 1 are provided.

[0061] In the figure: 100, mold body; 110, arc-shaped inclined groove; 120, alloy shell; 121, outer shell; 122, chassis; 130, graphite inner liner; 200, hydraulic component; 210, pressure plate; 220, graphite disc; 221, limiting protrusion; 300, pusher plate; 310, sliding column. Detailed Implementation

[0062] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0063] In this document, when it is mentioned that a first component is located on a second component, this can mean that the first component can be directly formed on the second component, or that a third component can be inserted between the first and second components. Furthermore, in the accompanying drawings, the thickness of the components may be exaggerated or reduced for the purpose of effectively describing the technical content.

[0064] In this document, when an element or layer is referred to as “located,” “joined to,” “connected to,” “attached to,” or “coupled to” another element or layer, it may be directly located, joined, connected, attached to, or coupled to the other element or layer, or there may be intermediate elements or layers present. Conversely, when an element is referred to as “directly on another element or layer,” “directly joined to,” “directly connected to,” “directly attached to,” or “directly coupled to” another element or layer, there may be no intermediate elements or layers present. Other terms used to describe relationships between elements should be interpreted in a similar manner (e.g., “between” versus “directly between,” “adjacent” versus “directly adjacent,” etc.). As used herein, the term “and / or” includes any and all combinations of one or more of the related listed items.

[0065] In this document, exemplary embodiments of the present disclosure will be described in more detail with reference to the accompanying drawings. As used herein, expressions such as “at least one of…” modify the entire list of elements when following a list of elements, rather than individual elements in the list. For example, the expression “at least one of a, b, and c” should be understood to include only a, only b, only c, both a and b, both a and c, both b and c, or all of a, b, and c.

[0066] The terminology used herein is for the purpose of describing specific exemplary configurations only and is not intended to be limiting. As used herein, the singular articles “a,” “an,” and “the” may also be intended to include plural forms unless otherwise expressly stated herein. The terms “comprising,” “including,” and “having” are inclusive and thus specify the presence of features, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and / or combinations thereof. The method steps, processes, and operations described herein should not be construed as requiring them to be performed in the specific order discussed or shown, unless specifically identified as such. Additional or alternative steps may be employed.

[0067] As used herein, the phrases “in one embodiment,” “according to one embodiment,” “in some embodiments,” etc., generally refer to the fact that a particular feature, structure, or characteristic following the phrase can be included in at least one embodiment of this disclosure. Therefore, a particular feature, structure, or characteristic can be included in more than one embodiment of this disclosure, such that these phrases do not necessarily refer to the same embodiment. As used herein, the terms “example,” “exemplary,” etc., are used to “serve as an example, instance, or illustration.” Any implementation, aspect, or design described herein as “example” or “exemplary” is not necessarily to be construed as preferred or superior to other implementations, aspects, or designs. Rather, the use of the terms “example,” “exemplary,” etc., is intended to present concepts in a specific manner.

[0068] Research has revealed that when the raw materials are loaded into the crucible, numerous pores exist between them. Gases within these pores are released into the solution as the materials melt, forming bubbles that affect crystal growth stability. This results in uneven crystal surfaces, increased internal defects, and even the formation of polycrystalline clusters, further reducing crystal growth stability. Simultaneously, to prevent solution overflow during melting, the crucible height must be higher than the height of the unmelted raw materials. The molten solution remains significantly lower than the crucible height. This excess crucible wall interferes with the temperature gradient at the growth interface, leading to supersaturation of the solution at the crucible edges, precipitation of impurities, and reduced crystal growth stability.

[0069] Based on the above research, this disclosure provides a silicon carbide crystal growth process and pre-pressing equipment based on the liquid phase method. The pre-pressing equipment compacts the feedstock, thereby reducing the porosity between the feedstocks and the total amount of gas bubbles released during the feedstock melting process, thus improving the stability of crystal growth. At the same time, by compacting the feedstock, the height of the crucible is reduced, thereby reducing the distance the crucible extends from the solution surface. This places the crucible and the solution as a whole in the high-temperature zone, reducing heat exchange with the low-temperature zone, thus avoiding heat loss and ensuring the stability of the temperature gradient at the growth interface, further improving the stability of crystal growth.

[0070] The shortcomings of the above solutions are the result of the inventor's practical experience and careful research. Therefore, the discovery process of the above problems and the solutions proposed in this disclosure should be considered as the inventor's contribution to this disclosure.

[0071] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0072] The following detailed description of some embodiments of the present invention is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0073] Please see Figure 1 This disclosure provides a silicon carbide crystal growth process based on the liquid phase method. By compacting the feedstock using a pre-compression device, the porosity between the feedstocks is reduced, thereby reducing the total amount of gas bubbles released during the feedstock melting process and improving the stability of crystal growth. At the same time, by compacting the feedstock, the height of the crucible is reduced, thereby reducing the distance the crucible extends from the solution surface. This places the crucible and the solution as a whole in the high-temperature zone, reducing heat exchange with the low-temperature zone and avoiding heat loss. This ensures the stability of the temperature gradient at the growth interface and further improves the stability of crystal growth.

[0074] Specifically, the process includes:

[0075] S110: The ingredients are pre-compressed using a pre-compressing device;

[0076] S120: The pusher plate 300 releases the adhesion between the compressed ingredients and the inner cavity of the pre-compression equipment.

[0077] Specifically, the pusher plate 300 rises, causing the alloy housing 120 of the pre-pressing equipment to rotate, so that the inner cavity of the pre-pressing equipment rotates relative to the pressed material; the pusher plate 300 rises, causing the pressed material to rise, pushing the pressed material out of the inner cavity of the pre-pressing equipment.

[0078] By linking the lifting of the pusher plate 300 to drive the rotation of the pre-compression equipment housing and the pusher action, the automatic release of the batching material after compression is realized, which solves the problem of difficulty in removing the batching material due to the adhesion of the batching material to the mold in the traditional process. At the same time, it also ensures the integrity of the batching material after compression and avoids the reduction of the batching material weight.

[0079] S130: Remove the compressed ingredients.

[0080] S140: Place the ingredients into a crucible whose height matches the height of the solution after the ingredients have melted.

[0081] Specifically, in step S140, the height of the crucible that matches the height of the solution after the ingredients have melted is h;

[0082] The crucible height h is obtained as follows:

[0083] Obtain the height H of the solution after the ingredients have melted;

[0084] The crucible height h is the sum of the preset difference a and the fusion height H.

[0085] The units for h, H, and a are mm.

[0086] The process for obtaining the height H of the solution after the ingredients have melted is as follows:

[0087] Obtain the total mass m of the ingredients;

[0088] Obtain the density ρ of the solution after the ingredients have melted;

[0089] H = m / (ρs);

[0090] In the formula, s is the area of ​​the crucible.

[0091] In other embodiments, the crucible height is h, which is adapted to the height of the solution after the ingredients have melted.

[0092] The crucible height h is obtained as follows:

[0093] Obtain the total mass m of the ingredients;

[0094] Input the total mass m into a pre-built database that correlates mass with solution height, and obtain the solution height H after the ingredients have melted, corresponding to the total mass m;

[0095] The crucible height h is the sum of the preset difference a and the fusion height H.

[0096] The preset difference 'a' ranges from 5 to 15 mm.

[0097] S150: Place the crucible into the silicon carbide crystal growth furnace to grow silicon carbide crystals.

[0098] It should be noted that, prior to step S11, the process further includes:

[0099] The ingredients are pulverized.

[0100] The particle size of the pulverized ingredients is between 0.5mm and 2mm.

[0101] Please see Figure 2 and Figure 3At least one embodiment also provides a pre-pressing device for a silicon carbide crystal growth process based on the liquid phase method as described above, comprising: a mold body 100 having a cylindrical inner cavity with an open top; a hydraulic assembly 200 disposed on the top of the mold body 100; and a pusher plate 300 disposed at the bottom of the inner cavity, with the pusher rod of the pusher plate 300 passing through the inner cavity and connected to an external drive component; when the pusher plate 300 rises, it drives the mold body 100 to rotate, thereby releasing the adhesion between the pressed material and the inner cavity of the mold body 100.

[0102] By compacting the ingredients using a pre-compression device, the porosity between the ingredients is reduced, thereby reducing the total amount of gas bubbles released during the melting process and improving the stability of crystal growth. At the same time, by compacting the ingredients, the height of the crucible is reduced, thus reducing the distance the crucible extends from the solution surface. This places the crucible and the solution as a whole in the high-temperature zone, reducing heat exchange with the low-temperature zone and avoiding heat loss. This ensures the stability of the temperature gradient at the growth interface and further improves the stability of crystal growth.

[0103] Specifically, the hydraulic assembly 200 includes: a pressure plate 210, which is connected to an external hydraulic cylinder via a pressure rod; and a graphite disc 220, which is bonded to the bottom surface of the pressure plate 210; wherein the graphite disc 220 extends axially toward the inner cavity with a plurality of limiting protrusions 221 to prevent the pressed material from rotating with the mold body 100.

[0104] An axial limiting protrusion 221 is provided on the graphite pressure plate 210 to prevent the material from rotating with the mold body 100, thus facilitating the separation of the material from the mold body 100.

[0105] Please see Figure 2 and Figure 3 The pusher plate 300 has a plurality of sliding columns 310 spaced circumferentially on its side; the mold body 100 has an arc-shaped groove 110 at the fitting point of the corresponding sliding column 310; when the pusher plate 300 rises, it drives the mold body 100 to rotate through the cooperation of the sliding column 310 and the arc-shaped groove 110.

[0106] By linking the pusher plate 300 to rise and drive the mold body 100 to rotate and push the material, the automatic release of the material after pressing is realized, which solves the problem of difficulty in removing the material due to the adhesion between the material and the mold in the traditional process. At the same time, it also ensures the integrity of the material after pressing and avoids the reduction of the weight of the material.

[0107] It should be noted that the mold body 100 includes: a graphite inner liner 130; an alloy shell 120, which is sleeved on the outside of the graphite inner liner 130; and the alloy shell 120 includes an outer shell 121 and a chassis 122; the alloy shell 120 is sleeved on the graphite inner liner 130; the chassis 122 is threadedly connected to the outer shell 121 to fix the graphite inner liner 130.

[0108] Graphite material is used as the inner liner of the mold body 100, so that metal impurities are mixed in during the batching and pressing process, thereby ensuring the purity of the batch.

[0109] Example 1

[0110] Step 1: Pre-press and remove the ingredients according to steps S110-S130.

[0111] Step 2: The pre-compressed ingredients are grown into silicon carbide crystals under standard operating conditions.

[0112] Step 3: Obtain the temperature at each distance between the center and edge of the seed crystal.

[0113] Following the steps described above, the growth process of silicon carbide crystals was observed. It was found that no floating crystals appeared on the liquid surface. Finally, a 6-inch silicon carbide single crystal was obtained with a smooth surface, without obvious macroscopic steps or solvent inclusions, and no obvious height difference between the edge and the center.

[0114] Comparative Example 1

[0115] The growth conditions of Comparative Example 1 were exactly the same as those of Example 1, except that Comparative Example 1 did not undergo pre-compression.

[0116] During the growth of silicon carbide crystals, floating crystals also appear on the liquid surface. The final 6-inch silicon carbide single crystal has a rough surface with obvious macroscopic steps. A large amount of solvent is attached between the steps, and the crystal clearly exhibits a convex morphology.

[0117] The temperature variation curves from the seed crystal center to the edge and the distance in Example 1 and Comparative Example 1 are as follows: Figure 5 As shown.

[0118] from Figure 5 It can be seen that the radial temperature difference at the center of the seed crystal in Example 1 fluctuates at around 1.5℃, and the radial growth temperature is relatively stable. In contrast, the radial temperature fluctuation in Comparative Example 1 is around 2.5℃, which is a larger range than that in Example 1. This shows that the pre-pressing equipment described above can reduce the radial temperature difference on the growth surface, avoid oversaturation of the solution at the edge of the crucible, and reduce the occurrence of floating crystals.

[0119] In summary, this invention provides a silicon carbide crystal growth process based on the liquid phase method. By compacting the feedstock using a pre-compression device, the porosity between the feedstock components is reduced, thereby decreasing the total amount of gas bubbles released during the feedstock melting process and improving the stability of crystal growth. Simultaneously, by compacting the feedstock, the height of the crucible is reduced, decreasing the distance the crucible extends from the solution surface. This places the crucible and solution as a whole in the high-temperature zone, reducing heat exchange with the low-temperature zone and thus avoiding heat loss. This ensures the stability of the temperature gradient at the growth interface and further improves the stability of crystal growth.

[0120] In the description of the embodiments of the present invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in the present invention based on the specific circumstances.

[0121] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, terms such as "first," "second," and other numerical terms used herein do not imply order or sequence unless expressly indicated herein. Therefore, without departing from the teachings of the exemplary embodiments, the first element, component, region, layer, or segment discussed above may be referred to as a second element, component, region, layer, or segment.

[0122] Spatially relative terms, such as “inside,” “outside,” “below,” “below,” “down,” “above,” “up,” etc., may be used herein to describe the relationship between one element or feature illustrated in the figures and another element or feature. In addition to the orientations depicted in the figures, spatially relative terms may be intended to cover different orientations of the device in use or operation. For example, if the device in the figure is flipped, an element described as “below” or “below” other elements or features would be oriented as “above” other elements or features. Thus, the example term “below” can cover both above and below orientations. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein are interpreted accordingly.

[0123] In the above discussion, unless otherwise stated, when used to describe numerical values, the terms “about,” “approximately,” “basically,” etc., indicate a change of + / - 10% in that value.

[0124] Based on the above-described preferred embodiments of the present invention, and through the foregoing description, those skilled in the art can make various changes and modifications without departing from the inventive concept. The technical scope of this invention is not limited to the contents of the specification, but must be determined according to the scope of the claims.

Claims

1. A silicon carbide crystal growth process based on liquid phase method, characterized in that, The process includes: The ingredients are pre-compressed using a pre-compressing device; The pusher plate (300) releases the adhesion between the compressed ingredients and the inner cavity of the pre-compression equipment; Remove the compressed ingredients; Place the ingredients into a crucible whose height matches the height of the solution after the ingredients have melted; The crucible is placed in a silicon carbide crystal growth furnace to grow silicon carbide crystals; The ingredients are placed in a crucible whose height is adapted to the height of the solution after the ingredients have melted, and the height of the crucible adapted to the height of the solution after the ingredients have melted is h; The crucible height h is obtained as follows: Obtain the height H of the solution after the ingredients have melted; The crucible height h is the sum of the preset difference a and the fusion height H. The units for h, H, and a are mm.

2. The silicon carbide crystal growth process based on the liquid phase method as described in claim 1, characterized in that, The process of releasing the adhesion between the compressed ingredients and the inner cavity of the pre-compression equipment via the pusher plate (300) includes: The pusher plate (300) rises, causing the alloy housing (120) of the pre-pressing equipment to rotate, so that the inner cavity of the pre-pressing equipment rotates relative to the pressed material; The pusher plate (300) rises, causing the compressed material to rise and push the compressed material out of the inner cavity of the pre-compression equipment.

3. The silicon carbide crystal growth process based on the liquid phase method as described in claim 1, characterized in that, The process for obtaining the height H of the solution after the ingredients have melted is as follows: Obtain the total mass m of the ingredients; Obtain the density ρ of the solution after the ingredients have melted; H = m / (ρs); In the formula, s is the area of ​​the crucible.

4. The silicon carbide crystal growth process based on the liquid phase method as described in claim 1, characterized in that, The ingredients are placed in a crucible whose height is adapted to the height of the solution after the ingredients have melted, and the height of the crucible adapted to the height of the solution after the ingredients have melted is h; The crucible height h is obtained as follows: Obtain the total mass m of the ingredients; Input the total mass m into a pre-built database that correlates mass with solution height, and obtain the solution height H after the ingredients have melted, corresponding to the total mass m; The crucible height h is the sum of the preset difference a and the fusion height H.

5. The silicon carbide crystal growth process based on the liquid phase method as described in claim 1, characterized in that, Before the ingredients are pre-compressed by the pre-compressing equipment, the process further includes: The ingredients are pulverized. The particle size of the pulverized ingredients is between 0.5mm and 2mm.

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