High mobility high stability oxide semiconductor materials, targets, thin films, transistors and applications

Abstract

High-migration, high-stability oxide semiconductor materials, targets, thin films, transistors, and their applications, among which the high-migration, high-stability oxide semiconductor materials are formed by doping a magnetic material MA into a metal oxide MO, resulting in a material with the chemical formula (MA). x (MO) 1‑x The semiconductor material is selected such that 0.001 ≤ x ≤ 0.3, thereby giving its charge carriers a spin magnetic moment that can be controlled by an electric field; the metal oxide MO contains at least one element selected from indium, zinc, gallium, tin, or cadmium. This invention utilizes magnetic element doping of the magnetic material MA to give the oxide semiconductor dilute magnetic properties. By controlling electron spin injection, the threshold voltage of the TFT can be controlled, thereby achieving a lower threshold voltage and better stability under high carrier concentration and high mobility. This invention can improve the on / off ratio of oxide thin-film transistors, reduce off-state current, control threshold voltage, and improve mobility and stability.

Description

Technical Field

[0001] This invention relates to the fields of semiconductor materials and devices, as well as display and sensing technologies, and particularly to high-mobility and high-stability oxide semiconductor materials, targets, thin films, transistors, and their applications. Background Technology

[0002] In recent years, oxide thin-film transistors (TFTs) based on oxide semiconductors have received increasing attention in sensing and display, especially in the field of organic light-emitting diode (OLED) displays. The long-term operational stability of TFTs is a crucial consideration for their practical application. During operation, TFTs inevitably experience temperature rise due to positive and negative gate bias, illumination (backlight, pixel self-illumination, or ambient light, etc.), and heat generation. Therefore, TFT devices must be validated under various conditions, such as gate bias stress, illumination, and temperature. A key characteristic of oxide TFTs is the trade-off between mobility and stability; increasing mobility leads to decreased stability, while increasing stability sacrifices mobility. Therefore, improving threshold voltage stability under various stresses and enhancing mobility are challenges that oxide thin-film transistor devices must overcome in practical applications.

[0003] In existing technologies, gallium (Ga) doping can improve stability to some extent. Ga is believed to play the following roles: reducing the concentration of oxygen vacancies, making the electron concentration in the channel more suitable for transistor devices; appropriately increasing the band gap, making the Urbach band tail sharper; and reducing the subbandgap state density. However, the effectiveness of Ga in suppressing the increase in electron concentration is still insufficient. β-Ga₂O₃ belongs to the c² / m space group and has a monoclinic crystal structure; Ga's p orbitals exhibit typical anisotropy and contribute to the conduction band bottom, resulting in poor conductivity and low mobility. The introduction of Ga inevitably comes at the cost of sacrificing the material's transport properties. Moreover, in large-area fabrication, there are reports of Ga inhomogeneity within the film plane during industrial production.

[0004] Therefore, it is essential to provide high-mobility and high-stability oxide semiconductor materials, targets, thin films, transistors, and applications to address the shortcomings of existing technologies. Summary of the Invention

[0005] The first objective of this invention is to overcome the shortcomings of the prior art by providing a high-mobility, high-stability oxide semiconductor material. This high-mobility, high-stability oxide semiconductor material can improve the mobility and stability of oxide TFTs.

[0006] The above-mentioned objectives of the present invention are achieved through the following technical measures:

[0007] A high-mobility, high-stability oxide semiconductor material is provided, which is formed by doping a magnetic material MA into a metal oxide MO, resulting in a material with the chemical formula (MA). x (MO) 1-x Semiconductor materials with 0.001≤x≤0.3, thereby giving their charge carriers a spin magnetic moment that can be controlled by an electric field.

[0008] Preferably, the metal oxide MO contains at least one element selected from indium, zinc, gallium, tin, or cadmium.

[0009] Preferably, the magnetic material MA contains at least one of iron, cobalt, nickel, manganese, chromium, or rare earth elements.

[0010] Preferably, the magnetic material MA contains both 3d magnetic elements and 4f rare earth magnetic elements, thereby increasing controllable magnetism by coupling the strong orbitals of 3d and 4f.

[0011] Preferably, the 3d magnetic element is at least one of iron, cobalt, nickel, manganese, and chromium.

[0012] Preferably, the above-mentioned 4f rare earth magnetic element is at least one selected from lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, or lutetium.

[0013] The high-mobility, high-stability oxide semiconductor material of the present invention also contains boron.

[0014] Preferably, the boron element is present in the magnetic material MA.

[0015] A second objective of this invention is to overcome the shortcomings of existing technologies and provide a high-mobility, high-stability oxide semiconductor target. This high-mobility, high-stability oxide semiconductor target can improve the mobility and stability of oxide TFTs.

[0016] The above-mentioned objectives of the present invention are achieved through the following technical measures:

[0017] A high-mobility, high-stability oxide semiconductor target is provided, which is formed by blending the above-mentioned high-mobility, high-stability oxide semiconductor material, then by hot pressing, cold pressing or slurry casting, and finally by sintering and polishing process.

[0018] A third objective of this invention is to overcome the shortcomings of existing technologies and provide a high-mobility, high-stability oxide semiconductor thin film. This high-mobility, high-stability oxide semiconductor thin film can improve the mobility and stability of oxide TFTs.

[0019] The above-mentioned objectives of the present invention are achieved through the following technical measures:

[0020] A high-mobility, high-stability oxide semiconductor thin film is provided, which is prepared from the above-mentioned high-mobility, high-stability oxide semiconductor material by physical vapor deposition, chemical vapor deposition or solution method.

[0021] or

[0022] It is prepared by physical vapor deposition from the above-mentioned high-mobility and high-stability oxide semiconductor target.

[0023] Preferably, the thickness of the above-mentioned high-mobility and high-stability oxide semiconductor thin film is 1nm to 500nm.

[0024] Preferably, the thickness of the above-mentioned high-mobility and high-stability oxide semiconductor thin film is 5nm~80nm.

[0025] A fourth objective of this invention is to provide an oxide thin-film transistor that overcomes the shortcomings of the prior art. This oxide thin-film transistor can improve the mobility and stability of oxide TFTs.

[0026] The above-mentioned objectives of the present invention are achieved through the following technical measures:

[0027] An oxide thin-film transistor is provided, comprising a gate, a channel layer, a gate insulating layer located between the gate and the channel layer, and a source and a drain respectively connected to both ends of the channel layer, wherein the channel layer material is the aforementioned high-mobility and high-stability oxide semiconductor thin film.

[0028] Preferably, the electrodes of the oxide thin-film transistor are made of magnetic thin film.

[0029] A fifth objective of this invention is to provide an application of an oxide thin-film transistor that overcomes the shortcomings of the prior art. Because this oxide thin-film transistor improves the mobility and stability of oxide TFTs, it can be used in active driving, integrated circuits, and sensing.

[0030] The above-mentioned objectives of the present invention are achieved through the following technical measures:

[0031] An application of an oxide thin-film transistor is provided, wherein the oxide thin-film transistor is used for active driving of organic light-emitting displays, liquid crystal displays, or electronic paper;

[0032] or

[0033] The oxide thin-film transistors are used in integrated circuits and sensing applications.

[0034] This invention relates to high-mobility, high-stability oxide semiconductor materials, targets, thin films, transistors, and their applications. The high-mobility, high-stability oxide semiconductor material is formed by doping a magnetic material MA into a metal oxide (MO) to create a semiconductor material with the chemical formula (MA)x(MO)1-x, where 0.001 ≤ x ≤ 0.3, thereby giving its charge carriers an electrically field-controllable spin magnetic moment. The metal oxide MO contains at least one element selected from indium, zinc, gallium, tin, or cadmium. This invention utilizes the magnetic element doping of the magnetic material MA to give the oxide semiconductor dilute magnetic properties. By controlling electron spin injection, the threshold voltage of a TFT can be controlled, thereby achieving a lower threshold voltage and better stability under high carrier concentration and high mobility. This invention can improve the on / off ratio of oxide thin-film transistors, reduce off-state current, control threshold voltage, and improve mobility and stability. Attached Figure Description

[0035] The invention will be further illustrated with reference to the accompanying drawings, but the contents of the drawings do not constitute any limitation on the invention.

[0036] Figure 1 This is a schematic diagram of the structure of the oxide thin-film transistor of the present invention.

[0037] Figure 2 The transfer characteristic curves of the oxide thin-film transistor device of Example 8 under NBIS (LED white light illumination and -10V gate bias) conditions are shown.

[0038] exist Figures 1 to 2 This includes:

[0039] Substrate 10, gate 11, insulating layer 12, channel layer 13, source 14a, drain 14b. Detailed Implementation

[0040] The technical solution of the present invention will be further described in conjunction with the following embodiments.

[0041] Example 1

[0042] A high-mobility, high-stability oxide semiconductor material is formed by doping a magnetic material MA into a metal oxide MO, resulting in a material with the chemical formula (MA). x (MO) 1-x Semiconductor materials with 0.001≤x≤0.3, thereby giving their charge carriers a spin magnetic moment that can be controlled by an electric field.

[0043] The metal oxide (MO) contains at least one element selected from indium, zinc, gallium, tin, or cadmium, such as In₂O₃, InZnO (IZO), and InSnO (ITO). High carrier concentration MOs can be used, eliminating the need to suppress carrier concentration through doping.

[0044] The magnetic material MA contains at least one of iron, cobalt, nickel, manganese, chromium, or rare earth elements. The magnetic material MA of this invention simultaneously contains 3d magnetic elements and 4f rare earth magnetic elements, thereby increasing controllable magnetism by coupling the strong orbitals of 3d and 4f. Specifically, the 3d magnetic element is at least one of iron, cobalt, nickel, manganese, and chromium. The 4f rare earth magnetic element is at least one of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, or lutetium.

[0045] It should be noted that this invention utilizes magnetic element doping to impart dilute magnetic properties to oxide semiconductors. By controlling electron spin injection, the threshold voltage of the TFT can be controlled, thereby achieving a lower threshold voltage and better stability even at high carrier concentrations (high mobility). This invention increases controllable magnetism through the coupling of strong 3d and 4f orbitals, and by designing the oxide semiconductor material of the thin-film transistor to simultaneously contain 3d magnetic elements and 4f rare-earth magnetic elements.

[0046] This invention employs metal oxide (MO) with high carrier concentration, eliminating the need for doping to suppress carrier concentration in MO. It utilizes an electric field to control spin injection into the oxide semiconductor thin-film transistor (TFT) to control the TFT threshold voltage, reduce off-state current, and improve mobility and stability. This avoids the shortcomings of reducing oxygen vacancies in oxide semiconductors by doping with low-electron-negativity metal elements, which can lead to decreased mobility, for example, doping with low-electron-negativity metal elements. This invention improves mobility.

[0047] Specifically, in this invention, for example, the MO (Metal Oxide) can utilize InSnO (ITO) with a high carrier concentration. Magnetic materials are doped into the ITO, and the carrier concentration is controlled by spin injection controlled by an electric field, thereby achieving threshold voltage control of the thin-film transistor and reducing off-state current. Simultaneously, due to the high intrinsic carrier concentration of the ITO thin film, its mobility is also high, as indicated by the percolation model. Therefore, the thin-film transistor oxide semiconductor material of this invention also exhibits high mobility. Furthermore, because the intrinsic carrier concentration of the ITO thin film is very high, the effect of light exposure or temperature increases on its carrier concentration is negligible. Therefore, the thin-film transistor oxide semiconductor material of this invention also exhibits good stability.

[0048] This high-mobility, high-stability oxide semiconductor material utilizes magnetic element doping of the magnetic material MA to impart dilute magnetic properties to the oxide semiconductor. By controlling electron spin injection, the threshold voltage of the TFT can be controlled, thereby achieving a lower threshold voltage and better stability under high carrier concentration and high mobility. This invention can improve the on / off ratio of oxide thin-film transistors, reduce off-state current, control threshold voltage, and improve mobility and stability.

[0049] Example 2

[0050] A high-mobility, high-stability oxide semiconductor material, which has the same characteristics as in Example 1, also has the following characteristics: the high-mobility, high-stability oxide semiconductor material of this embodiment further contains boron, specifically boron in the magnetic material MA.

[0051] The introduction of boron in this invention increases the crystal field effect and further enhances the magnetism, thereby enhancing the controllable magnetic field of the high-mobility and high-stability oxide semiconductor material, realizing the control of electron spin injection, and thus realizing the control of the TFT threshold voltage.

[0052] Example 3

[0053] A high-mobility, high-stability oxide semiconductor target is formed by blending the high-mobility, high-stability oxide semiconductor materials of Example 1 or Example 2, followed by hot pressing, cold pressing, or slurry casting, and finally by sintering and polishing processes.

[0054] This high-mobility, high-stability oxide semiconductor target utilizes magnetic element doping of the magnetic material MA to impart dilute magnetic properties to the oxide semiconductor. By controlling electron spin injection, the threshold voltage of the TFT can be controlled, thereby achieving a low threshold voltage under high carrier concentration and high mobility, while maintaining good stability. TFT devices fabricated using this high-mobility, high-stability oxide semiconductor target can achieve high on / off ratios, low off-state currents, and precise control of the threshold voltage, balancing high mobility and long-term stability.

[0055] Example 4

[0056] A high-mobility, high-stability oxide semiconductor thin film is prepared from the high-mobility, high-stability oxide semiconductor material of Example 1 or Example 2 by physical vapor deposition, chemical vapor deposition, or solution method.

[0057] The thickness of this high-mobility and high-stability oxide semiconductor thin film ranges from 1 nm to 500 nm.

[0058] This high-mobility, high-stability oxide semiconductor thin film is fabricated from the aforementioned high-mobility, high-stability oxide semiconductor material. It inherits the dilute magnetic properties resulting from magnetic element doping. By controlling electron spin injection, precise regulation of the TFT threshold voltage is achieved, thus maintaining high mobility and low threshold voltage under high carrier concentration, resulting in significantly improved stability. TFT devices fabricated from this high-mobility, high-stability oxide semiconductor thin film can achieve high on / off ratios, low off-state current, and precise control of the threshold voltage, balancing high mobility and long-term stability.

[0059] Example 5

[0060] A high-mobility, high-stability oxide semiconductor thin film is prepared by physical vapor deposition from the high-mobility, high-stability oxide semiconductor target material of Example 3.

[0061] The thickness of this high-mobility and high-stability oxide semiconductor thin film ranges from 1 nm to 500 nm.

[0062] This high-mobility, high-stability oxide semiconductor thin film is fabricated from the aforementioned high-mobility, high-stability oxide semiconductor material. It inherits the dilute magnetic properties resulting from magnetic element doping. By controlling electron spin injection, precise regulation of the TFT threshold voltage is achieved, thus maintaining high mobility and low threshold voltage under high carrier concentration, resulting in significantly improved stability. TFT devices fabricated from this high-mobility, high-stability oxide semiconductor thin film can achieve high on / off ratios, low off-state current, and precise control of the threshold voltage, balancing high mobility and long-term stability.

[0063] Example 6

[0064] An oxide thin-film transistor includes a gate, a channel layer, a gate insulating layer located between the gate and the channel layer, and a source and a drain connected to the two ends of the channel layer, wherein the channel layer material is a high-mobility and high-stability oxide semiconductor thin film of Example 4 or Example 5.

[0065] This oxide thin-film transistor employs common TFT device structures in the art, such as bottom-gate-top contact, bottom-gate-bottom contact, top-gate-top contact, or top-gate-bottom contact structures. The thin-film transistor also includes an etch barrier layer, a passivation layer, a buffer layer, and contact doped regions.

[0066] The gate material is a conductive material, such as metal, alloy, conductive metal oxide, doped silicon, conductive polymer, etc., or a superposition of two or more thin films composed of any combination of the above materials.

[0067] The insulating layer is an insulating material used in semiconductor devices, such as a single-layer thin film composed of silicon dioxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum oxide alloy, ytterbium oxide, titanium oxide, hafnium oxide, tantalum oxide, zirconium oxide, polymer insulating materials, photoresist, etc., or a superposition of two or more thin films composed of any combination of the above materials.

[0068] The source and drain electrodes are made of conductive materials, such as single-layer thin films of metals, alloys, conductive metal oxides, conductive polymers, etc., or stacks of two or more thin films composed of any combination of the above materials.

[0069] The thin-film transistor of the present invention is fabricated on a substrate, which is one of the substrate materials such as glass, flexible polymer substrate, silicon wafer, metal foil, and quartz. It may further include a buffer layer or water and oxygen barrier layer covering the substrate.

[0070] The thin-film transistor of the present invention is fabricated by the following method:

[0071] (1) Prepare one or more conductive thin films with a thickness of 100nm to 500nm by sputtering, and pattern them by masking or photolithography to obtain the gate.

[0072] (2) The insulating layer is prepared by spin coating, drop coating, printing, anodizing, thermal oxidation, physical vapor deposition or chemical vapor deposition, with a thickness of 100 nm to 1000 nm, and is patterned by masking or photolithography.

[0073] (3) The channel layer is prepared by physical vapor deposition or solution method. The thickness of the channel layer is 5nm to 80nm. It is patterned by photolithography, masking, printing or UV irradiation.

[0074] (4) Prepare one or more conductive films with a thickness of 100 nm to 1000 nm by vacuum evaporation or sputtering, and simultaneously obtain the source and drain by masking or photolithography.

[0075] Experiments have demonstrated that the oxide thin-film transistor of this invention exhibits high electron mobility. This embodiment utilizes magnetic element doping to impart dilute magnetic properties to the oxide semiconductor. By controlling electron spin injection, the TFT threshold voltage is controlled, thereby achieving a lower threshold voltage and better stability even at high carrier concentrations (high mobility). Controllable magnetism is further enhanced through the coupling of strong 3d and 4f orbitals.

[0076] The materials, thin films, and devices of this invention can improve the on / off ratio of oxide thin film transistors, reduce off-state current, control threshold voltage, and improve mobility and stability.

[0077] Example 7

[0078] An oxide thin-film transistor has a bottom-gate top-contact structure, such as... Figure 1 As shown, a substrate 10, a gate 11 located on the substrate 10, an insulating layer 12 located on the substrate 10 and the gate 11, a channel layer 13 covering the upper surface of the insulating layer 12 and corresponding to the gate 11, and a source 14a and a drain 14b spaced apart from each other and electrically connected to the two ends of the channel layer 13 are provided. The substrate 10 is glass containing a buffer layer.

[0079] The fabrication method of this oxide thin-film transistor involves first preparing a 300 nm thick Al:Nd film on a glass substrate by sputtering, then patterning the gate electrode 11 using photolithography, and finally preparing an insulating layer 12 by anodic oxidation to form a 200 nm thick gate oxide layer (AlO). X The chemical formula for the composition of channel layer 13 is (CoTbB). x (In5.2 Zn 1.0 O y ) 1-x Where 0.001≤x≤0.15. The channel layer 13 is prepared by multi-target co-sputtering. A nickel thin film with a thickness of 240nm is prepared on the channel layer 13 by sputtering, which serves as the source 14a and drain 14b.

[0080] The specific preparation method of the channel layer 13 of the present invention is as follows:

[0081] (CoTbB) x (In 5.2 Zn 1.0 O y ) 1-x The target material is prepared and then mounted on the target position of the sputtering instrument. The sputtering process then forms (CoTbB) on the same substrate. x (In 5.2 Zn 1.0 O y ) 1-x film.

[0082] The fabricated thin-film transistor device was further annealed at 300°C for 1 hour in an atmospheric environment. The mobility and NBIS stability of the device are shown in Table 1.

[0083] Table 1. Based on (CoTbB) x (In 5.2 Zn 1.0 O y ) 1-x The mobility and threshold voltage of thin-film transistors at different scales x V th )

[0084]

[0085] As can be seen from Table 1, even with CoTbB doping of 0.001, the threshold voltage decreases significantly; when the CoTbB doping amount increases to 0.01, V th This can be controlled at -13.8V; when the CoTbB doping level is increased to 0.03%, V th This allows the voltage to be controlled at -4.1V, which basically meets application requirements; when the CoTbB doping level is 0.15%, V th The value is positive, 0.1V. On the other hand, the mobility decreases with increasing CoTbB doping concentration, but it still maintains 42.8 cm⁻¹ when the CoTbB doping concentration is 0.03%. 2 / Vs indicates that appropriate CoTbB doping can significantly reduce the threshold voltage while having a relatively small impact on mobility, breaking through the bottleneck problem of the mutual constraint between mobility and stability in traditional oxide semiconductors. The main reason is that the strong coupling between the 3d orbitals of Co and the 4f orbitals of Tb greatly increases the magnetism, while the presence of boron increases the effect of the crystal field, further enhancing the magnetism. This makes the electric field of the oxide semiconductor thin film controllable and the magnetism enhanced, enabling control over electron spin injection and thus control over the TFT threshold voltage.

[0086] Therefore, the high mobility and high stability oxide semiconductor material, target, thin film, and transistor of the present invention can improve the on / off ratio of oxide thin film transistors, reduce off-state current, control threshold voltage, and improve mobility and stability.

[0087] Example 8

[0088] An oxide thin-film transistor, such as Figure 1 As shown, other features are the same as in Example 7, and it also has the following features: The fabrication process of this oxide thin film transistor is as follows: First, a 300 nm thick Al:Nd film is prepared on a glass substrate by sputtering. The gate 11 is obtained by photolithography. Then, an insulating layer 12 is prepared by anodizing to form a 200 nm thick gate oxide layer AlO. X The chemical formula for the composition of channel layer 13 is (NdFeB). x (In2O3) 1-x Or (PrFeB) x (In2O3) 1-x Where 0.005≤x≤0.1.

[0089] The channel layer 13 is prepared by pulsed laser deposition (PLD). Co electrodes are prepared on the channel layer 13 by vapor deposition, serving as the source 14a and drain 14b.

[0090] Table 2 lists the absolute values ​​(Δ) of the threshold voltage drift of the above thin-film transistors based on different x-ratios under NBIS (LED white light illumination and -30V gate bias) conditions. V th ).

[0091] Table 2. Threshold voltage drift (Δ) of thin-film transistors based on different oxide semiconductor materials at different ratios x (LED white light illumination and -30V gate bias). V th )

[0092]

[0093] As shown in Table 2, under the same anionic environment, thin-film transistors using Pr as the cation exhibit better stability than NBIS using Nd as the cation. This is mainly because Pr can more easily achieve charge transfer transitions.

[0094] Example 9

[0095] An application of an oxide thin-film transistor (TFT) is discussed. TFT devices fabricated from high-mobility, high-stability oxide semiconductor materials, high-mobility, high-stability oxide semiconductor targets, or high-mobility, high-stability oxide semiconductor thin films can achieve high on / off ratios, low off-state currents, and precise control of the threshold voltage, while also balancing high mobility and long-term stability. Therefore, this oxide thin-film transistor can be used for active driving in organic light-emitting displays, liquid crystal displays, or electronic paper, and can also be used in integrated circuits and sensing fields.

[0096] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit the scope of protection of the present invention. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the essence and scope of the technical solutions of the present invention.

Claims

1. A high-mobility, high-stability oxide semiconductor material, characterized in that: To form a metal oxide (MO) with the magnetic material MA, the chemical formula (MA) is... x (MO) 1-x Semiconductor materials with 0.001≤x≤0.3, thereby giving their charge carriers a spin magnetic moment that can be controlled by an electric field; The metal oxide MO contains at least one element selected from indium, zinc, gallium, tin, or cadmium; The magnetic material MA contains both 3d magnetic elements and 4f rare earth magnetic elements; the 3d magnetic elements are at least one of iron, cobalt, nickel, manganese, and chromium. The 4f rare earth magnetic element is at least one of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, or lutetium; It also contains boron; The boron element is present in the magnetic material MA.

2. A high-mobility, high-stability oxide semiconductor target, characterized in that: It is formed by blending the high-mobility and high-stability oxide semiconductor material as described in claim 1, then by hot pressing, cold pressing or slurry casting, and finally by sintering and polishing processes.

3. A high-mobility, high-stability oxide semiconductor thin film, characterized in that: The high-mobility and high-stability oxide semiconductor material described in claim 1 is prepared by physical vapor deposition, chemical vapor deposition, or solution method; or The high-mobility, high-stability oxide semiconductor target described in claim 2 is prepared by physical vapor deposition; The thickness of the high-mobility and high-stability oxide semiconductor thin film is 1nm~500nm.

4. An oxide thin-film transistor, comprising a gate, a channel layer, a gate insulating layer located between the gate and the channel layer, and a source and a drain respectively connected to both ends of the channel layer, characterized in that: The channel layer material is the high-mobility, high-stability oxide semiconductor thin film as described in claim 3; The electrodes of the oxide thin-film transistor are made of magnetic thin film.

5. An application of the oxide thin-film transistor as described in claim 4, characterized in that: The oxide thin-film transistor is used for active driving of organic light-emitting displays, liquid crystal displays, or electronic paper; or The oxide thin-film transistors are used in integrated circuits and sensing applications.

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