Glass via and method of making the same

Abstract

The application discloses a glass via hole and a preparation method thereof. The method comprises the following steps: forming a photoresist mask on the surface of a glass substrate; performing a first etching step, using plasma of a first gas and a second gas filtered out of charged particles to perform isotropic first etching on the exposed surface of the glass substrate, forming a via hole intermediate structure, and forming a first polymer layer on the inner wall and the photoresist mask to protect the same; performing a second etching step, using plasma of a third gas and a fourth gas to perform anisotropic second etching on the first polymer layer on the bottom of the inner wall, exposing the underlying glass substrate to perform the first etching again; repeatedly performing the first etching step and the second etching step to form a via hole complete structure on the glass substrate; and then performing a treatment process. The application can simplify the process, improve the selection ratio, improve the efficiency, and realize better side wall smoothness.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor processing, in particular to a glass via and a preparation method thereof. BACKGROUND

[0002] At present, the dry etching process applied to glass via (TGV) processing is usually designed with the following steps:

[0003] 1) First, deposit a metal Al layer on the glass substrate as a hard mask layer for TGV etching;

[0004] 2) Cover photoresist on the Al layer, and expose the etching area on the Al layer by photolithography technology;

[0005] 3) Use Cl2 / BCL3 plasma etching to expose the Al layer on the etching area to form an Al pattern;

[0006] 4) Use O2 to remove the photoresist;

[0007] 5) Take the Al pattern as a mask to perform TGV dry etching.

[0008] However, the actual process of the above TGV etching is relatively complex, low in efficiency, and high in cost. At the same time, the use of metal mask may also cause byproduct pollution problems. Moreover, the existing TGV etching process usually adopts a non-periodic cycle etching mode (relative to a periodic cycle etching mode of the form of deposition-etching-deposition-etching repetition), which has relatively poor size uniformity and is difficult to meet the growing demand for greater aspect ratio and higher interconnection density. Therefore, it is necessary to study a process method that can significantly improve the above problems. SUMMARY

[0009] The present application aims to overcome the above problems existing in the prior art, and provides a glass via and a preparation method thereof to avoid the use of a metal mask, simplify the process, improve the efficiency, and improve the selectivity of the photoresist mask, so as to facilitate the preparation of a glass via with higher aspect ratio and higher interconnection density.

[0010] To achieve the above-mentioned purpose, the technical solutions of the present application are as follows:

[0011] According to the first aspect of the present application, the present application provides a glass via preparation method, comprising:

[0012] providing a glass substrate;

[0013] forming a plurality of photoresist masks on the surface of the glass substrate, and having a first etching window between two adjacent photoresist masks;

[0014] performing a first etching step, using a plasma of a first gas and a second gas filtered of charged particles, and through the first etching window, isotropically etching the exposed surface of the glass substrate, forming a via intermediate structure on the glass substrate, and forming a first polymer layer on the inner wall of the via intermediate structure and the photoresist mask to protect the inner wall and the photoresist mask when performing the first etching;

[0015] performing a second etching step, using a plasma of a third gas and a fourth gas, anisotropically etching the first polymer layer on the inner wall bottom, forming a second etching window on the inner wall bottom, exposing the glass substrate, and performing the first etching again through the second etching window;

[0016] sequentially repeating the first etching step and the second etching step until a via finished structure is formed on the glass substrate;

[0017] Then, a processing process is performed to improve the smoothness of the sidewall of the formed via finished structure;

[0018] The first gas is a fluorocarbon gas with a fluorine-carbon ratio greater than or equal to 1:3, the second gas is a first inert gas, the third gas is a chlorine-based gas, and the fourth gas is a second inert gas.

[0019] In some embodiments, by sequentially repeating the first etching step and the second etching step, a plurality of periodic cycle etching steps are formed in the order of performing the first etching step, performing the second etching step, wherein when the last periodic cycle etching step before the formation of the via finished structure is performed, the second etching step is not performed by default.

[0020] In some embodiments, the processing process includes a deposition step and a third etching step; the deposition step is used to deposit a second polymer layer on the sidewall using a plasma of a fifth gas and a sixth gas, and the third etching step is used to remove a portion of the thickness of the second polymer layer deposited on the sidewall using a plasma of a seventh gas and an eighth gas, and react with the glass substrate material existing and exposed on the tooth-like surface of the sidewall to remove at least part of the tooth-like surface; wherein the fifth gas is a hydrocarbon gas, the sixth gas is a third inert gas, the seventh gas is a fluorine-based gas, and the eighth gas is a fourth inert gas.

[0021] In some embodiments, the first etching step is performed using a first pressure and a first bias power, and the second etching step is performed using a second pressure and a second bias power, wherein the first pressure is greater than the second pressure and the first bias power is less than the second bias power.

[0022] In some embodiments, the deposition step is performed using a third pressure and a third bias power, and the third etching step is performed using a fourth pressure and a fourth bias power, wherein the third pressure is greater than the fourth pressure and the third bias power is less than the fourth bias power.

[0023] In some embodiments, the first pressure is 100 mTorr to 1 Torr.

[0024] In some embodiments, the first bias power is 0W.

[0025] In some embodiments, the second pressure is 10mTorr to 100mTorr.

[0026] In some embodiments, the second bias power is 50W to 100W.

[0027] In some embodiments, the third pressure is 1 Torr to 5 Torr.

[0028] In some embodiments, the third bias power is 0W.

[0029] In some embodiments, the fourth pressure is 30 mTorr to 100 mTorr.

[0030] In some embodiments, the fourth bias power is 1000W to 2000W.

[0031] In some embodiments, the first gas is any one of CHF3, C4F8, and C4F6, and the second gas is He.

[0032] In some embodiments, the third gas is BCl3 and the fourth gas is Ar.

[0033] In some embodiments, the fifth gas is CH4 and the sixth gas is He.

[0034] In some embodiments, the seventh gas is NF3 and the eighth gas is Ar.

[0035] In some embodiments, the first gas and the second gas have the following flow ratio: CHF3:He = 1:1 to 2:1, or C4F8:He = 3:1 to 4:1, or C4F6:He = 5:1 to 6:1.

[0036] In some embodiments, the third gas and the fourth gas have the following flow ratio: BCl3:Ar = 1:1 to 1:10.

[0037] In some embodiments, the fifth gas and the sixth gas have the following flow ratio: CH4:He = 0.2:1 to 1:1.

[0038] In some embodiments, the seventh gas and the eighth gas have the following flow ratio: NF3:Ar = 1:5 to 1:10.

[0039] In some embodiments, when performing the processing technology, the deposition step and the third etching step are repeated sequentially a preset number of times.

[0040] In some embodiments, the preset number of times is 15 to 25 times.

[0041] According to a second aspect of this application, embodiments of this application also provide a glass through-hole, which is obtained using a glass through-hole preparation method as provided in any of the embodiments of the first aspect above.

[0042] The embodiments of this application may have, or at least have, the following advantages:

[0043] (1) By using a photoresist mask and plasma with first and second gases filtered out of charged particles, isotropic first etching is performed on the surface of the glass substrate exposed in the first etching window between two adjacent photoresist masks to form a via intermediate structure. A first polymer layer is formed on the inner wall of the via intermediate structure and on the photoresist mask. Anisotropic second etching is performed on the first polymer layer at the bottom of the inner wall using plasma with third and fourth gases to form a second etching window, exposing the glass substrate below so that the first etching can be performed again through the second etching window. This can significantly improve the selectivity of the photoresist mask. Therefore, it is possible to replace the traditional metal hard mask with a photoresist mask. By sequentially repeating the first and second etching steps, a via structure with a higher aspect ratio (glass via) can be formed on the glass substrate. It can also improve etching uniformity and verticality, avoid the contamination problem when using a metal mask, simplify the process, and improve efficiency.

[0044] (2) By sequentially repeating the first etching step and the second etching step in each cycle, firstly using a plasma (i.e., using neutral particles in the plasma) to filter out charged particles (a first gas (a carbon-fluorine gas with a carbon-fluorine ratio greater than or equal to 1:3) and second gas (He) to perform isotropic etching on the glass substrate (first etching), and turning off the bias power (the first bias power is 0W), the bombardment of the photoresist mask can be reduced. At the same time as etching, the first polymer layer formed on the photoresist mask is used to protect the photoresist mask, which significantly improves the selectivity of the photoresist mask and forms an etching depth on the glass substrate. The structure is then subjected to anisotropic etching (second etching) using plasma of a third gas (BCl3) and a fourth gas (Ar) under a certain bias power (the second bias power is 50W~100W). This opens a new etching window (second etching window), allowing the etching process to continue downwards by repeating the first etching step. This eliminates the problem of difficulty in continuous downward etching caused by the isotropic etching step above. By repeating the first and second etching steps, a via structure as a glass via can be finally formed on the glass substrate. This enables via structures with higher aspect ratios and higher interconnect densities that are difficult to achieve with conventional processes.

[0045] (3) By using a carbon-fluorine gas with a carbon-fluorine ratio greater than or equal to 1:3 as the first gas for the first etching, the high carbon-fluorine ratio can be used to enhance the polymer formation effect. At the same time as etching, a first polymer layer is formed on the inner wall and the exposed surface of the photoresist mask, thus playing a dual role of etching and protection. This not only allows for control of the degree of lateral etching, but also eliminates the deposition step that is independently set and indispensable in the traditional periodic etching process. Therefore, only the same set of process gas (first gas and second gas) system is needed to complete the etching and deposition processes that originally required two sets of process gas (etching gas + deposition gas) systems, greatly simplifying the process, improving efficiency, and reducing control difficulty.

[0046] (4) By using BCl3 (third gas) and Ar (fourth gas) for the second etching, the bottom of the inner wall of the formed via structure (intermediate via structure) can be directionally bombarded to remove the first polymer layer on the bottom of the inner wall, exposing the glass substrate below for the first etching. At the same time, the characteristics of BCl3 and Ar that have little effect on the glass substrate (compared to conventional etching gases such as fluorine-containing gases) can be taken into account, avoiding damage to the formed etching morphology and preventing the problem of the upper dimension continuously increasing with repeated etching. This ensures the etching uniformity and verticality, which is more conducive to realizing glass vias with higher aspect ratio and higher interconnect density that are difficult to achieve with conventional processes on the glass substrate.

[0047] (5) By performing a processing step including a deposition step and a third etching step after the through-hole structure is formed, the smoothness of the sidewall of the through-hole structure is further improved. And depending on the roughness of the sidewall (the protrusion height of the serrations), by repeatedly performing the deposition step and the third etching step a preset number of times, the serrations on the sidewall can be completely or substantially eliminated, thereby improving the device performance.

[0048] (6) When performing the deposition step, by using plasma of the fifth gas (CH4) and the sixth gas (He) and under high pressure (third pressure) and off bias power (third bias power is 0W), the second polymer layer is deposited on the sidewall. This makes it easier for the second polymer layer to stay and accumulate on the sidewall surface of the recess between adjacent toothed patterns where the flow rate is relatively weak, preventing further lateral etching. However, there is very little deposition on the sidewall surface at the end of the toothed pattern. Thus, when using plasma of the seventh gas (fluorine-based gas) and the eighth gas (Ar) and performing the third etching step under low pressure (fourth pressure) and a large bias power (fourth bias power is 1000W~2000W), the flow rate of the etching gas can be increased and given directionality, so that the etching is mainly concentrated on the end of the toothed pattern. This not only effectively removes the toothed pattern on the sidewall, but also effectively protects the sidewall, which is beneficial to maintaining the uniformity of the size.

[0049] Other advantages of this application will be described in the following detailed description. Attached Figure Description

[0050] Figure 1 This is a flowchart of a preferred embodiment of the method for preparing a glass through-hole.

[0051] Figure 2 This is a schematic diagram of a structure after forming a photoresist mask with a first etching window between adjacent layers on a glass substrate, which is a preferred embodiment of this application.

[0052] Figure 3 This is a schematic diagram of a structure after the formation of the first through-hole intermediate structure on a glass substrate, according to a preferred embodiment of this application.

[0053] Figure 4 This is a schematic diagram of a structure after a first second etched window is formed on the bottom of the intermediate structure of the first through hole, according to a preferred embodiment of this application.

[0054] Figure 5 This is a schematic diagram of a structure after forming a second through-hole intermediate structure below the first second etching window and forming a second second etching window on the bottom of the second through-hole intermediate structure, according to a preferred embodiment of this application.

[0055] Figure 6 This is a schematic diagram of a structure completed by forming a through-hole on a glass substrate, according to a preferred embodiment of this application.

[0056] Figure 7 This is a schematic diagram of a structure after the sidewall of a through-hole structure has been processed, according to a preferred embodiment of this application.

[0057] Figure 8 This is a schematic diagram of the structure after removing the photoresist mask, provided as a preferred embodiment of this application.

[0058] In the figure, 10. Glass substrate; 11. First etching window; 12. Photoresist mask; 13. Through-hole intermediate structure; 14. First polymer layer; 15. Second etching window; 16. Completed through-hole structure. Detailed Implementation

[0059] Existing through-glass via (TGV) etching processes typically use plasmas containing fluorine gases such as CF4 and SF6 to perform non-periodic cyclic etching of glass substrates. Because using gases with relatively low polymer-forming properties like CF4 or SF6 for one-step continuous etching results in a low selectivity for the photoresist (primarily because these gases cannot provide sufficient polymer protection for the photoresist, and the energetic ions in the plasma can bombard the photoresist significantly), making it difficult to etch very deep TGV structures. If gases with higher polymer-forming properties, such as C4F8 and C4F6, are used instead, while providing better protection for the photoresist, excessive polymer formation during non-periodic cyclic etching can easily cause etching angle deviations or even "etching stoppage." Therefore, from the perspective of ensuring etching performance, existing TGV etching processes can only use gases with relatively low polymer-forming properties, but this results in a low photoresist selectivity, thus necessitating the use of more resistant metal masks for TGV etching. Furthermore, the disadvantage of using non-periodic cyclic etching is that the dimensional uniformity of the TGV after etching is relatively poor (generally forming a shape that is larger at the top and smaller at the bottom), which affects the realization of extreme high aspect ratio etching, making it difficult to meet the growing demand for larger aspect ratios and higher interconnect densities.

[0060] To address the shortcomings of existing technologies, this application provides a method for preparing glass through-holes, including:

[0061] Provide glass substrates;

[0062] Multiple photoresist masks are formed on the surface of the glass substrate, and a first etching window is provided between two adjacent photoresist masks;

[0063] The first etching step is performed by using plasma containing a first gas and a second gas that have been filtered out of charged particles, and isotropically etching the exposed surface of the glass substrate through the first etching window to form a through-hole intermediate structure on the glass substrate. A first polymer layer is formed on the inner wall of the through-hole intermediate structure and on the photoresist mask to protect the inner wall and the photoresist mask during the first etching.

[0064] The second etching step is performed by using plasma of the third and fourth gases to perform anisotropic second etching on the first polymer layer on the bottom of the inner wall, forming a second etching window on the bottom of the inner wall to expose the glass substrate, so that the first etching can be performed again through the second etching window;

[0065] The first etching step and the second etching step are repeated sequentially until a through-hole is formed on the glass substrate to complete the structure.

[0066] In addition, a processing technique is performed to improve the sidewall smoothness of the formed through-hole structure;

[0067] Wherein, the first gas is a carbon-fluorine gas with a carbon-fluorine ratio greater than or equal to 1:3, the second gas is a first inert gas, the third gas is a chlorine-based gas, and the fourth gas is a second inert gas.

[0068] This application embodiment employs a photoresist mask and uses plasma containing a first gas and a second gas (which has been filtered to remove charged particles) to perform isotropic first etching on the surface of a glass substrate exposed through a first etching window between two adjacent photoresist masks, forming a via intermediate structure. A first polymer layer is formed on the inner wall of the via intermediate structure and on the photoresist mask. Then, using plasma containing a third gas and a fourth gas, anisotropic second etching is performed on the first polymer layer at the bottom of the inner wall, forming a second etching window that exposes the glass substrate below. This allows for a second first etching through the second etching window, significantly improving the selectivity of the photoresist mask. Therefore, it is possible to replace traditional metal hard masks with photoresist masks. By sequentially repeating the first and second etching steps, a via structure with a higher aspect ratio (glass via) can be formed on the glass substrate. Furthermore, it can improve etching uniformity and perpendicularity, avoid contamination problems associated with using metal masks, simplify the process, and improve efficiency.

[0069] This application also provides a glass through-hole obtained using the above-described glass through-hole preparation method.

[0070] The specific embodiments of this application will now be described in detail with reference to the accompanying drawings.

[0071] refer toFigure 1 This application provides a method for preparing glass through-holes, which includes the following steps:

[0072] Step S11: Provide a glass substrate.

[0073] refer to Figure 2 A glass substrate 10 is used to further form a through-glass via (TGV) on the glass substrate 10 by performing an etching process.

[0074] In some embodiments, the glass via can be a high aspect ratio glass via (e.g., an aspect ratio greater than 50:1).

[0075] In some embodiments, the glass substrate 10 includes a SiO2 substrate or the like.

[0076] Step S12: Form multiple photoresist masks on the surface of the glass substrate.

[0077] refer to Figure 2 In some embodiments, a spin-coating process can be used to form a photoresist layer on the upper surface of the glass substrate 10. Then, a photolithography process is used to etch the photoresist layer, thereby forming a plurality of photoresist patterns, i.e., photoresist masks 12, on the upper surface of the glass substrate 10. A first etching window 11 for etching the glass substrate 10 is provided between any two adjacent photoresist masks 12, and the surface of the glass substrate 10 located between the two adjacent photoresist masks 12 is exposed at the bottom of the first etching window 11.

[0078] It should be noted that, Figure 2 The diagram only schematically illustrates the case where two photoresist masks 12 are formed on the upper surface of the glass substrate 10. However, it is understood that more photoresist masks can be formed on the upper surface of the glass substrate 10, such as three photoresist masks, four photoresist masks, ten photoresist masks, etc., and it is not limited to this.

[0079] Step S13: Using plasma from which charged particles have been filtered out, an isotropic first etching is performed on the glass substrate to form a via intermediate structure on the glass substrate, and a first polymer layer is formed on the inner wall of the via intermediate structure and on the surface of the photoresist mask.

[0080] In some embodiments, by performing an etching process and using a photoresist mask 12 as a mask, the surface of the glass substrate 10 exposed in the first etching window 11 between adjacent photoresist masks 12 is periodically etched to form a via structure (glass via) with a high aspect ratio on the glass substrate 10.

[0081] The etching process includes multiple periodic cyclic etching steps, sequentially performed as a first etching step and a second etching step, to form the via-hole completion structure. That is, by repeatedly performing the first and second etching steps, multiple periodic cyclic etching steps are formed, sequentially performed as a first etching step and a second etching step. In other words, the etching process includes multiple periodic cyclic etching steps, sequentially performed as a first etching step and a second etching step. The first etching step is used to perform a first etching on the glass substrate 10 and form a first polymer layer on the inner wall of the formed via-hole completion structure (intermediate via-hole structure) and on the entire exposed surface of the photoresist mask 12, to protect the inner wall of the formed via-hole completion structure and the photoresist mask 12 during the first etching.

[0082] Therefore, the etching process in this application embodiment no longer includes the deposition step found in conventional periodic cyclic etching processes.

[0083] refer to Figure 3 In some embodiments, the first etching step in the etching process is performed using a plasma from a first gas and a second gas that has been filtered to remove charged particles, i.e., using neutral particles from the plasma of the first gas and the second gas. Using a photoresist mask 12 as a mask, and through a first etching window 11, isotropic first etching is performed on the glass substrate 10 to form a via intermediate structure 13 (the first via intermediate structure 13) on the glass substrate 10. Simultaneously, taking advantage of the high polymer-forming properties of the first gas, a first polymer layer 14 is formed on the inner wall of the via intermediate structure 13 (the completed via structure under formation) and on all exposed surfaces of the photoresist mask 12. Figure 3 Only the first polymer layer 14 located on the inner wall of the via intermediate structure 13 and the top surface of the photoresist mask 12 is shown. The first polymer layer 14 deposited on other parts (such as the side surface of the photoresist mask 12 and the exposed bottom surface at the junction with the top of the via intermediate structure 13) is omitted from the display. This is to protect the inner wall of the via intermediate structure 13 and the photoresist mask 12 during the first etching step. In other words, in this embodiment, the first gas used in the first etching step is used both to etch the glass substrate 10 to form the via intermediate structure 13 and to form the first polymer layer 14 to protect the inner wall of the via intermediate structure 13 and the photoresist mask 12. The second gas can be used as an auxiliary gas.

[0084] By ionizing the first and second gases introduced into the process chamber, a plasma of the first and second gases is obtained. By activating the ion filtering function of the process chamber, ion filtering is performed to remove charged particles such as ions from the plasma formed by the first and second gases, resulting in neutral particles. Using the neutral particles from the obtained plasma of the first and second gases, an isotropic first etching is performed on the glass substrate 10, forming a first via intermediate structure 13 on the glass substrate 10. Simultaneously, a first polymer layer 14 is formed on the inner wall of the via intermediate structure 13 and on the surface of the photoresist mask 12.

[0085] In some embodiments, the first gas is a fluorocarbon gas with a carbon-to-fluorine ratio greater than or equal to 1:3. For example, the first gas can be any one of CHF3, C4F8, C4F6, C5F8, and CH2F2. The second gas is an inert gas (the first inert gas). For example, the second gas can be He. That is, fluorine radicals (neutral particles) in a plasma formed from any one of CHF3, C4F8, C4F6, C5F8, and CH2F2 can be used to perform the first etching and deposition of the first polymer layer 14 on the glass substrate 10, with He as the auxiliary gas.

[0086] In some embodiments, a first etching step is performed using a first temperature, a first pressure, a first source power, and a first bias power. Specifically, the first temperature is greater than 0°C, the first pressure is greater than the pressure used when performing the second etching step (second pressure), the first source power is greater than the source power used when performing the second etching step (second source power), and the first bias power is less than the bias power used when performing the second etching step (second bias power).

[0087] In some embodiments, the first temperature is 50°C to 90°C. For example, the first temperature can be 50°C, 55°C, 60°C, 65°C, 70°C, 75°C, 80°C, 85°C, or 90°C, or any value between any two of the aforementioned temperature values. However, it is not limited to this.

[0088] In some embodiments, the first pressure is 100 mTorr to 1 Torr. For example, the first pressure can be 100 mTorr, 200 mTorr, 300 mTorr, 400 mTorr, 500 mTorr, 600 mTorr, 700 mTorr, 800 mTorr, 900 mTorr, or 1 Torr, or any value between any two of the aforementioned pressure values. However, it is not limited to these.

[0089] In some embodiments, the first source power is 1000W to 3000W. For example, the first source power can be 1000W, 1200W, 1500W, 2000W, 2500W, or 3000W, or any value between any two of the aforementioned source power values. However, it is not limited to this.

[0090] In some embodiments, the first bias power is 0W (bias power off).

[0091] In some embodiments, the total flow rate of the first gas and the second gas is 50 sccm to 1000 sccm. For example, the total flow rate of the first gas and the second gas can be 50 sccm, 60 sccm, 80 sccm, 100 sccm, 300 sccm, 500 sccm, 700 sccm, or 1000 sccm, or any value between any two of the aforementioned flow rate values. However, it is not limited to this.

[0092] In some embodiments, the first gas and the second gas may have the following flow ratio relationship: CHF3:He = 1:1 to 2:1; or, C4F8:He = 3:1 to 4:1; or, C4F6:He = 5:1 to 6:1; or, C5F8:He = 5:1 to 6:1; or, CH2F2:He = 2:1 to 3:1. However, it is not limited to these.

[0093] This embodiment employs a photoresist mask 12 and uses plasma (neutral particles) containing a first gas and a second gas (which have been filtered to remove charged particles) to perform isotropic first etching on the glass substrate 10. The bias power is turned off (the first bias power is 0W), which reduces the bombardment of the photoresist mask 12. Furthermore, the high carbon-to-fluorine ratio of the first gas enhances polymer formation. Simultaneously, a heavy first polymer layer 14 is formed on the inner wall of the via intermediate structure 13 and the exposed surface of the photoresist mask 12, providing excellent protection for the photoresist mask 12. This results in a high selectivity for the photoresist mask 12, achieving a dual function of etching and protection, and expanding the process window. Simultaneously, utilizing the non-directional nature of neutral particles, approximately 1:1 isotropic etching can be achieved in both the longitudinal and transverse directions, resulting in an etching morphology of the via intermediate structure 13 that is close to a bowl shape (arc-shaped depression) (see reference). Figure 3The first polymer layer 14, covering the inner wall of the through-hole intermediate structure 13, prevents the first etching from continuing, thereby ensuring the uniformity of dimensions in each cycle. Therefore, the embodiments of this application can not only control the degree of lateral etching, but also eliminate the independently set and indispensable deposition step in the traditional periodic etching process. Only one set of process gas (first gas and second gas) system is needed to complete the etching and deposition processes that conventionally require two sets of process gas (etching gas + deposition gas) systems, greatly simplifying the process, improving efficiency, and reducing control difficulty.

[0094] Step S14: Using plasma of the third and fourth gases, perform anisotropic second etching on the first polymer layer at the bottom of the through-hole intermediate structure, and expose the glass substrate at the bottom, so as to perform first etching on the exposed glass substrate again.

[0095] The second etching step in the etching process is used to perform anisotropic second etching on the first polymer layer 14 on the bottom of the inner wall of the formed via-hole completion structure (via intermediate structure 13). A second etching window is formed on the first polymer layer 14 at the bottom of the formed via-hole completion structure, exposing the glass substrate 10 located below the second etching window, allowing the first etching to be performed again through the second etching window. Thus, by repeating the first etching, downward etching can continue, eliminating the problem of difficulty in continuous downward etching caused by the isotropic etching in the previous step. By repeating the first and second etching steps multiple times, via-hole completion structures with higher aspect ratios that are difficult to achieve with conventional processes can be fabricated on the glass substrate 10.

[0096] refer to Figure 4 In some embodiments, a second etching step in the etching process is performed using a plasma of a third gas and a fourth gas. Specifically, charged particles in the plasma of the third gas and the fourth gas are used. Using a photoresist mask 12 as a mask, anisotropic second etching is performed on the first polymer layer 14 at the bottom of the formed first via intermediate structure 13 through the first etching window 11. This etches through the first polymer layer 14 covering the bottom of the first via intermediate structure 13, thereby forming a second etching window 15 on the first polymer layer 14 at the bottom of the first via intermediate structure 13, exposing the glass substrate 10 located below the second etching window 15. Thus, the first etching can be performed again through the second etching window 15, and a second via intermediate structure 13 can be formed on the glass substrate 10 below the second etching window 15 (below the first via intermediate structure 13). Figure 5 ).

[0097] By ionizing the third and fourth gases introduced into the process chamber, a plasma of the third and fourth gases is obtained. The ion filtering function of the process chamber is then turned off, i.e., ion filtering is canceled, so that the ions contained in the plasma formed by the introduced third and fourth gases are retained, resulting in charged particles. Using the charged particles from the obtained plasma of the third and fourth gases, an isotropic first etching is performed on the first polymer layer 14 at the bottom of the first via intermediate structure 13, forming a through-hole second etching window 15 on the first polymer layer 14 at the bottom of the first via intermediate structure 13.

[0098] In some embodiments, the third gas is a chlorine-based gas. For example, the third gas can be BCl3. The fourth gas is an inert gas (second inert gas). For example, the fourth gas can be Ar. That is, charged particles (ions) in the plasma of BCl3 and Ar are used to perform an isotropic first etching on the first polymer layer 14 at the bottom of the through-hole intermediate structure 13, and form a second etching window 15.

[0099] In some embodiments, a second etching step is performed using a second temperature, a second pressure, a second source power, and a second bias power. Specifically, the second temperature is greater than 0°C (the second temperature may be the same as or different from the first temperature), the second pressure is less than the first pressure, the second source power is less than the first source power, and the second bias power is greater than the first bias power.

[0100] In some embodiments, the second temperature is 50°C to 90°C. For example, the second temperature can be 50°C, 55°C, 60°C, 65°C, 70°C, 75°C, 80°C, 85°C, or 90°C, or any value between any two of the aforementioned temperature values. However, it is not limited to these.

[0101] In some embodiments, the second pressure is 10 to 100 mTorr. For example, the second pressure can be 10 mTorr, 20 mTorr, 30 mTorr, 40 mTorr, 50 mTorr, 60 mTorr, 70 mTorr, 80 mTorr, 90 mTorr, or 100 mTorr, or any value between any two of the aforementioned pressure values. However, it is not limited to these.

[0102] In some embodiments, the second source power is 500W to 1000W. For example, the second source power can be 500W, 600W, 700W, 800W, 900W, or 1000W, or any value between any two of the aforementioned source power values. However, it is not limited to this.

[0103] In some embodiments, the second bias power is 50W to 100W. For example, the second bias power can be 50W, 60W, 70W, 80W, 90W, or 100W, or any value between any two of the aforementioned bias power values. However, it is not limited to this.

[0104] In some embodiments, the total flow rate of the third gas and the fourth gas is 50 sccm to 1000 sccm. For example, the total flow rate of the third gas and the fourth gas can be 50 sccm, 60 sccm, 90 sccm, 100 sccm, 200 sccm, 500 sccm, 800 sccm, or 1000 sccm, or any value between any two of the aforementioned flow rate values. However, it is not limited to this.

[0105] In some embodiments, the third gas and the fourth gas may have the following flow ratio: BCl3:Ar = 1:1 to 1:10. However, it is not limited to this.

[0106] This embodiment of the application, by using a third gas and a fourth gas for anisotropic second etching under a certain bias power (the second bias power is 50W to 100W), can not only directionally bombard the bottom of the inner wall of the formed via structure, removing the first polymer layer 14 on the bottom of the inner wall and exposing the glass substrate 10 below for the first etching, but also utilizes the characteristic that BCl3 and Ar have virtually no significant etching effect on the glass substrate 10 (compared to conventional etching gases such as fluorine-containing gases), avoiding damage to the formed etching morphology and preventing the problem of the upper dimension continuously increasing with repeated etching, thus ensuring etching uniformity and verticality. This is more conducive to realizing etching structures (glass vias) with higher aspect ratios and higher interconnect density on the glass substrate 10 that are difficult to achieve with conventional processes.

[0107] In some embodiments, before performing the etching process, i.e., before etching the glass substrate 10, a second etching step included in the etching process is used as a pretreatment process. The pretreatment process uses Ar plasma as a fourth gas (Ar... + The surface of the photoresist mask 12 is modified to reduce its surface roughness and improve its pattern accuracy, thereby improving the deposition quality of the first polymer layer 14 during the subsequent first etching step. This enhances the protection of the photoresist mask 12, reduces its consumption, and further improves the selectivity of the photoresist mask 12. Then, the etching process is performed.

[0108] Step S15: Repeat the first and second etching processes until a through-hole structure is formed on the glass substrate.

[0109] refer to Figure 5 In some embodiments, step S13 is repeated, that is, the first etching step in the etching process is repeated. Neutral particles in the plasma of the first gas and the second gas are used. The photoresist mask 12 is used as a mask, and the glass substrate 10 exposed below the second etching window 15 is subjected to isotropic first etching again through the first etching window 11 and the second etching window 15. The second through-hole intermediate structure 13 is then formed on the glass substrate 10 below the second etching window 15 (below the first through-hole intermediate structure 13). At the same time, taking advantage of the strong polymer forming ability of the first gas, the first polymer layer 14 is formed again on the inner wall of the second through-hole intermediate structure 13 (including the first through-hole intermediate structure 13) and on all exposed surfaces of the photoresist mask 12.

[0110] Next, step S14 is repeated, that is, the second etching step in the etching process is repeated. Charged particles in the plasma of the third and fourth gases are used, with the photoresist mask 12 as a mask, and the first etching window 11 and the second etching window 15 (first second etching window 15) are used to perform anisotropic second etching on the first polymer layer 14 at the bottom of the second via intermediate structure 13, so as to etch through the first polymer layer 14 covering the bottom of the second via intermediate structure 13, thereby forming a second etching window 15 (second second etching window 15) on the first polymer layer 14 at the bottom of the second via intermediate structure 13, exposing the glass substrate 10 located below the second etching window 15.

[0111] Similarly, by continuing to repeat steps S13 to S14, a third via intermediate structure 13 and a third second etched window 15, a fourth via intermediate structure 13 and a fourth second etched window 15, etc., can be continuously formed below the second via intermediate structure 13 and the second second etched window 15, until a via completion structure 16 with a target aspect ratio, composed of successive via intermediate structures 13, is finally formed from top to bottom on the glass substrate 10. This is called a glass via (TGV). Figure 6 As shown. Figure 6 The illustration only schematically shows the formation of six through-hole intermediate structures 13 on the glass substrate 10 (from top to bottom: the first through-hole intermediate structure 13, the second through-hole intermediate structure 13, the third through-hole intermediate structure 13, the fourth through-hole intermediate structure 13, the fifth through-hole intermediate structure 13, and the sixth through-hole intermediate structure 13). However, it is understood that other desired numbers of through-hole intermediate structures 13 can be formed on the glass substrate 10, and therefore should not be construed as a limitation of this application.

[0112] It should be noted that during the last cycle (the last periodic etching step) before the formation of the through-hole structure 16, since it is no longer necessary to form a second etching window 15 on the bottom of the last through-hole intermediate structure 13, the second etching step can be omitted (by default) during the last cycle. That is, the bottom of the lowest through-hole intermediate structure 13 may not have a second etching window 15, as shown below. Figure 6 As shown.

[0113] In some embodiments, the present application embodiments are based on an etching process with multiple periodic cyclic etching steps, which only includes the first etching step and the second etching step described above in sequence, and no longer include other etching steps for etching the glass substrate 10 and other deposition steps for independently depositing the first polymer layer 14.

[0114] In some embodiments, the etching process includes a first etching stage, a second etching stage, and a third etching stage, which are sequentially connected to form the top, middle, and bottom portions of the through-hole completion structure 16, respectively. Furthermore, the carbon-to-fluorine ratio (C / F ratio) of the first gas used in the first etching step of the first etching stage, the first gas used in the first etching step of the second etching stage, and the first gas used in the first etching step of the third etching stage increases sequentially. For example, in the first etching stage, the first gas used in the first etching step may include a fluorocarbon gas with a C / F ratio of 1:3, such as CHF3; in the second etching stage, the first gas used in the first etching step may include a fluorocarbon gas with a C / F ratio of 1:2, such as C4F8 or CH2F2; and in the third etching stage, the first gas used in the first etching step may include a fluorocarbon gas with a C / F ratio greater than 1:2, such as C4F6 or C5F8. Thus, as the etching depth of structure 16 increases with the via completion, a higher carbon-to-fluorine ratio enhances deposition, effectively suppressing lateral etching of the bottom sidewalls and eliminating bottom side-cutting issues. This further ensures dimensional uniformity and perpendicularity along the depth direction. Therefore, by performing the etching process in stages, not only are the limitations of traditional single etching processes in achieving high-precision control overcome, but a more refined and controllable etching scheme is also provided for the manufacturing of high-performance devices. This effectively expands the etching process window, facilitating the realization of glass vias with higher aspect ratios and higher interconnect densities.

[0115] Step S16: Process the sidewalls of the through-hole structure.

[0116] Due to the characteristics of the cyclic etching process, regular tooth-like patterns will inevitably form from top to bottom on the sidewalls of the completed via structure 16 (see reference). Figure 6Furthermore, the tooth-like texture has a certain degree of protrusion (nanometer level). Therefore, the sidewalls of the through-hole completed structure 16 can be treated (post-processing) by performing a processing technique to improve the smoothness of the sidewalls of the formed through-hole completed structure 16.

[0117] In some embodiments, forming as Figure 6 After the via-hole structure 16 is completed as shown, at least a portion of the serrations present on the sidewalls of the via-hole structure 16 are removed by performing a processing step. The processing step includes a deposition step and a third etching step; the deposition step uses plasmas of a fifth gas and a sixth gas to deposit a second polymer layer (not shown) on the sidewalls of the via-hole structure 16; the third etching step uses plasmas of a seventh gas and an eighth gas to remove a portion of the thickness of the second polymer layer deposited on the sidewalls and reacts with the glass substrate 10 material on the exposed serration surface of the sidewalls to remove at least a portion of the serrations.

[0118] In some embodiments, by ionizing the fifth and sixth gases introduced into the process chamber to obtain a plasma of the fifth and sixth gases, and by turning off the ion filtering function of the process chamber (i.e., canceling ion filtering), the sidewalls of the via-hole completion structure 16 are treated with the plasma of the fifth and sixth gases containing charged particles, and a second polymer layer is deposited on the sidewalls of the via-hole completion structure 16. By ionizing the seventh and eighth gases introduced into the process chamber to obtain a plasma of the seventh and eighth gases, and by turning off the ion filtering function of the process chamber (i.e., canceling ion filtering), a portion of the thickness of the second polymer layer deposited on the sidewalls is removed with the plasma of the seventh and eighth gases containing charged particles, and the polymer layer reacts with the glass substrate 10 material on the exposed serrated surface of the sidewalls to remove at least a portion of the serrations.

[0119] In some embodiments, the fifth gas is a hydrocarbon gas. For example, the fifth gas can be CH4. The sixth gas is an inert gas (the third inert gas). For example, the sixth gas can be He. That is, a plasma formed by CH4 and He can be used, and the strong polymer-forming ability of CH4 can be utilized to form a polymer whose main component is C, so as to form a second polymer layer on the sidewall of the through-hole structure 16.

[0120] By using CH4, a gas with strong polymer-forming ability, as the fifth gas, a polymer can be deposited on the sidewalls to form a second polymer layer, which prevents the etching reaction from continuing and protects the sidewalls from lateral etching, thus preventing the problem of size expansion.

[0121] In some embodiments, the seventh gas is a fluorinated gas with weak polymer-forming ability. For example, the seventh gas can be any one of SF6, CF4, and NF3. The eighth gas is an inert gas (fourth inert gas). For example, the eighth gas can be Ar. Using SF6, CF4, or NF3, a portion of the thickness of the second polymer layer on the sidewall can be removed, exposing the ends of the serrated texture, and reacting with the exposed glass substrate 10 material (SiO2), thereby removing at least a portion of the serrated texture.

[0122] By repeatedly performing the deposition and third etching steps in the processing, the serrations on the sidewalls can be completely or substantially removed.

[0123] In some embodiments, when performing the processing, the deposition step and the third etching step are repeated in a cycle for a preset number of times (one cycle is defined as one consecutive execution of the deposition step and one third etching step).

[0124] In some embodiments, the preset number of times is 15 to 25. For example, the preset number of times can be 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, or 25. Alternatively, the preset number of times can be less than 15 or more than 25 (depending on the protrusion height of the serrations).

[0125] In some embodiments, a high-pressure third pressure is used to perform the deposition step, and a low-pressure fourth pressure is used to perform the third etching step, where the third pressure is greater than the fourth pressure. There are recesses between adjacent serrations on the sidewall. By using a high-pressure third pressure in the deposition step and turning off the bias power, the structural difference between the protruding ends of the serrations and the recesses on the sidewall allows the introduced fifth and sixth gases to more easily remain and accumulate on the sidewall surface at the relatively low flow rate of the recesses, while the flow rates of the fifth and sixth gases are relatively fast on the sidewall surface at the ends of the serrations. Furthermore, the structure at the ends of the serrations is unique, and the polymer has relatively few adhesion points, resulting in less deposition and a thinner second polymer layer at the ends of the serrations. Since the use of the seventh and eighth gases consumes a portion of the second polymer layer on the sidewalls, using a low-pressure fourth gas and applying a larger bias power can increase the flow rate and directionality of the seventh and eighth gases, causing the etching to focus primarily on the ends of the serrated patterns (because firstly, there is less polymer deposited at the ends of the serrated patterns, and secondly, the consumption of polymer by the seventh and eighth gases exposes the ends of the serrated patterns). The relatively thick second polymer layer on the sidewall surface of the recessed area effectively protects the sidewalls during the third etching step.

[0126] In some embodiments, a third temperature, a third pressure, a third source power, and a third bias power are used to perform the deposition step.

[0127] In some embodiments, the third temperature is 10°C to 20°C. For example, the third temperature can be 10°C, 11°C, 12°C, 13°C, 14°C, 15°C, 16°C, 17°C, 18°C, 19°C, or 20°C, or any value between any two of the aforementioned temperature values. However, it is not limited to this.

[0128] In some embodiments, the third pressure is 1 Torr to 5 Torr. For example, the third pressure can be 1 Torr, 1.3 Torr, 1.5 Torr, 1.7 Torr, 2 Torr, 3 Torr, 4 Torr, or 5 Torr, or any value between any two of the aforementioned pressure values. However, it is not limited to these values.

[0129] In some embodiments, the third source power is 100W to 500W. For example, the third source power can be 100W, 200W, 300W, 400W, or 500W, or any value between any two of the aforementioned source power values. However, it is not limited to this.

[0130] In some embodiments, the third bias power is 0W (bias power off).

[0131] In some embodiments, the total flow rate of the fifth and sixth gases is 100 sccm to 500 sccm. For example, the total flow rate of the fifth and sixth gases can be 100 sccm, 200 sccm, 300 sccm, 400 sccm, or 500 sccm, or any value between any two of the aforementioned flow rate values. However, it is not limited to this.

[0132] In some embodiments, the fifth gas and the sixth gas may have the following flow ratio: CH4:He = 0.2:1 to 1:1. However, it is not limited to this.

[0133] In some embodiments, a third etching step is performed using a fourth temperature, a fourth pressure, a fourth source power, and a fourth bias power.

[0134] In some embodiments, the fourth temperature is 10°C to 20°C. For example, the fourth temperature can be 10°C, 11°C, 12°C, 13°C, 14°C, 15°C, 16°C, 17°C, 18°C, 19°C, or 20°C, or any value between any two of the aforementioned temperature values. However, it is not limited to this.

[0135] In some embodiments, the fourth pressure is 30 to 100 mTorr. For example, the fourth pressure can be 30, 40, 50, 60, 70, 80, 90, or 100 mTorr, or any value between any two of the aforementioned pressure values. However, it is not limited to this.

[0136] In some embodiments, the fourth source power is 100W to 1000W. For example, the fourth source power can be 100W, 200W, 300W, 400W, 500W, 600W, 700W, 800W, 900W, or 1000W, or any value between any two of the aforementioned source power values. However, it is not limited to this.

[0137] In some embodiments, the fourth bias power is 1000W to 2000W. For example, the fourth bias power can be 1000W, 1100W, 1200W, 1300W, 1400W, 1500W, 1600W, 1700W, 1800W, 1900W, or 2000W, or any value between any two of the aforementioned bias power values. However, it is not limited to this.

[0138] In some embodiments, the total flow rate of the seventh and eighth gases is 50 sccm to 200 sccm. For example, the total flow rate of the seventh and eighth gases can be 50 sccm, 60 sccm, 80 sccm, 100 sccm, 120 sccm, 150 sccm, 170 sccm, or 200 sccm, or any value between any two of the aforementioned flow rate values. However, it is not limited to this.

[0139] In some embodiments, the seventh gas and the eighth gas may have the following flow ratio: SF6:Ar = 1:10 to 1:20; or CF4:Ar = 1:5 to 1:10; or NF3:Ar = 1:5 to 1:10. However, it is not limited to these.

[0140] After processing the sidewalls of the through-hole finished structure 16, the serrated texture present on the sidewalls can be completely or substantially removed, resulting in a through-hole finished structure 16 with smoother sidewalls, such as... Figure 7 As shown.

[0141] Step S17: Remove the photoresist mask.

[0142] refer to Figure 8In some embodiments, a plasma of a ninth gas is used to remove the photoresist mask 12 from the surface of the glass substrate 10. The plasma of the ninth gas is obtained by ionizing the ninth gas introduced into the process chamber. After removing the photoresist mask 12, a via structure 16, i.e., a glass via (TGV), is formed on the surface of the glass substrate 10, as shown in the figure. Figure 8 As shown.

[0143] In some embodiments, the ninth gas includes an oxidizing gas. For example, the ninth gas may include O2, etc.

[0144] According to a second aspect of this application, embodiments of this application also provide a glass through-hole, which is obtained using a glass through-hole preparation method as provided in any of the embodiments of the first aspect above.

[0145] refer to Figure 8 In some embodiments, the glass via (TGV) is a via completion structure 16. The via completion structure 16 is formed on the surface of the glass substrate 10 and has sidewall treatment.

[0146] In some embodiments, the glass substrate 10 with glass through-holes (through-hole completion structure 16) can be applied to fields such as high-frequency communication, optoelectronics, 3D integration and advanced packaging.

[0147] In a third aspect, embodiments of this application also provide a plasma processing apparatus for performing the glass via fabrication method corresponding to the above embodiments to form the via completion structure 16 (glass via) corresponding to the above embodiments. The plasma processing apparatus includes inductively coupled plasma (ICP) etching equipment or capacitively coupled plasma (CCP) etching equipment, etc.

[0148] In other aspects, embodiments of this application also provide an electronic device, including a glass through-hole (through-hole completed structure 16) obtained using the glass through-hole preparation method of the above embodiments. The electronic device can be a storage device, mobile phone, computer, tablet computer, electronic instrument, television, artificial intelligence device, etc.

[0149] In summary, this embodiment employs a photoresist mask 12 and uses plasma containing a first gas and a second gas (which has been filtered to remove charged particles) to perform isotropic first etching on the surface of the glass substrate 10 exposed in the first etching window 11 between two adjacent photoresist masks 12, forming a via intermediate structure 13. A first polymer layer 14 is formed on the inner wall of the via intermediate structure 13 and on the photoresist mask 12. An anisotropic second etching is then performed on the first polymer layer 14 at the bottom of the inner wall using plasma containing a third gas and a fourth gas. Etching forms a second etching window 15, exposing the underlying glass substrate 10 so that the first etching can be performed again through the second etching window 15. This significantly improves the selectivity of the photoresist mask 12, thus enabling the replacement of traditional metal hard masks with photoresist masks. By sequentially repeating the first and second etching steps, a via structure 16 (glass via) with a higher aspect ratio is formed on the glass substrate 10. This also improves etching uniformity and verticality, avoids contamination problems when using metal masks, simplifies the process, and improves efficiency.

[0150] The above are merely preferred embodiments of this application. These embodiments are not intended to limit the scope of protection of this application. Therefore, any equivalent changes made based on the description and drawings of this application should also be included within the scope of protection of this application.

Claims

1. A method for preparing glass through-holes, characterized in that, include: Provide glass substrates; Multiple photoresist masks are formed on the surface of the glass substrate, and a first etching window is provided between two adjacent photoresist masks; The first etching step is performed by using plasma containing a first gas and a second gas that have been filtered out of charged particles, and isotropically etching the exposed surface of the glass substrate through the first etching window to form a through-hole intermediate structure on the glass substrate. A first polymer layer is formed on the inner wall of the through-hole intermediate structure and on the photoresist mask to protect the inner wall and the photoresist mask during the first etching. The second etching step is performed by using plasma of the third and fourth gases to perform anisotropic second etching on the first polymer layer on the bottom of the inner wall, forming a second etching window on the bottom of the inner wall to expose the glass substrate, so that the first etching can be performed again through the second etching window; The first etching step and the second etching step are repeated sequentially until a through-hole structure is formed on the glass substrate; then... Perform processing techniques to improve the sidewall smoothness of the formed through-hole structure; Wherein, the first gas is a carbon-fluorine gas with a carbon-fluorine ratio greater than or equal to 1:3, the second gas is a first inert gas, the third gas is a chlorine-based gas, and the fourth gas is a second inert gas.

2. The method for preparing glass through-holes according to claim 1, characterized in that, By sequentially repeating the first etching step and the second etching step, multiple periodic cyclic etching steps are formed, in which the first etching step is executed and the second etching step is executed in sequence. When performing the last periodic cyclic etching step before the through hole completes the structure, the second etching step is executed by default.

3. The method for preparing glass through-holes according to claim 1, characterized in that, The processing technology includes a deposition step and a third etching step; the deposition step is used to deposit a second polymer layer on the sidewall using plasmas of a fifth gas and a sixth gas; the third etching step is used to remove a portion of the thickness of the second polymer layer deposited on the sidewall using plasmas of a seventh gas and an eighth gas, and to react with the glass substrate material on the exposed serrated surface of the sidewall to remove at least a portion of the serrations; wherein the fifth gas is a hydrocarbon gas, the sixth gas is a third inert gas, the seventh gas is a fluorine-based gas, and the eighth gas is a fourth inert gas.

4. The method for preparing glass through-holes according to claim 3, characterized in that, The first etching step is performed using a first pressure and a first bias power; the second etching step is performed using a second pressure and a second bias power, wherein the first pressure is greater than the second pressure and the first bias power is less than the second bias power; the deposition step is performed using a third pressure and a third bias power; and the third etching step is performed using a fourth pressure and a fourth bias power, wherein the third pressure is greater than the fourth pressure and the third bias power is less than the fourth bias power.

5. The method for preparing glass through-holes according to claim 4, characterized in that, The first pressure is 100 mTorr to 1 Torr; and / or, the first bias power is 0 W; and / or, the second pressure is 10 mTorr to 100 mTorr; and / or, the second bias power is 50 W to 100 W; and / or, the third pressure is 1 Torr to 5 Torr; and / or, the third bias power is 0 W; and / or, the fourth pressure is 30 mTorr to 100 mTorr; and / or, the fourth bias power is 1000 W to 2000 W.

6. The method for preparing glass through-holes according to claim 3, characterized in that, The first gas is any one of CHF3, C4F8, and C4F6; the second gas is He; the third gas is BCl3; the fourth gas is Ar; the fifth gas is CH4; the sixth gas is He; the seventh gas is NF3; and the eighth gas is Ar.

7. The method for preparing glass through-holes according to claim 6, characterized in that, The first gas and the second gas have the following flow ratio: CHF3:He = 1:1 to 2:1, or C4F8:He = 3:1 to 4:1, or C4F6:He = 5:1 to 6:1; and / or, the third gas and the fourth gas have the following flow ratio: BCl3:Ar = 1:1 to 1:10; and / or, the fifth gas and the sixth gas have the following flow ratio: CH4:He = 0.2:1 to 1:1; and / or, the seventh gas and the eighth gas have the following flow ratio: NF3:Ar = 1:5 to 1:

10.

8. The method for preparing glass through-holes according to claim 3, characterized in that, When performing the processing technology, the deposition step and the third etching step are repeated sequentially a preset number of times.

9. The method for preparing glass through-holes according to claim 8, characterized in that, The preset number of times is 15 to 25.

10. A glass through-hole, characterized in that, It is obtained using the glass through-hole preparation method as described in any one of claims 1-9.

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