A kind of anti-voltage surge control circuit for multi-MOS parallel driving

Abstract

The application belongs to the technical field of power electronics, and discloses a kind of voltage surge control circuit for multiple MOS tube parallel driving, including linear voltage stabilizing circuit, voltage preprocessing circuit, BOOST boost circuit, reference control circuit, MOS drive circuit and multiple MOS parallel circuit, the input end of linear voltage stabilizing circuit is connected with external DC stabilized power supply, linear voltage stabilizing circuit, voltage preprocessing circuit, BOOST boost circuit, reference control circuit, MOS drive circuit and multiple MOS parallel circuit are sequentially connected, and the output end of multiple MOS parallel circuit is used to connect the input end of external DC-DC power supply conversion module.The circuit of the application can meet the demand of large current current-carrying capacity in the circuit, and achieve the purpose of voltage surge control.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of power electronics, and particularly relates to a voltage surge prevention control circuit for multi-MOS parallel driving. BACKGROUND

[0002] In a high-power power electronic device, a single MOS tube often cannot meet the demand of large current flow capacity, so multiple MOS tubes are often used in parallel. However, in the multi-tube parallel application, there are several key technical problems:

[0003] 1. Inconsistent driving: due to the dispersion of MOS tube device parameters (such as threshold voltage and transconductance) and the difference of driving loop parasitic parameters, the opening and closing times of each tube are not completely synchronized. In particular, at the time of closing, the last closing tube will bear most or even all of the reverse current, and the current change rate is very large, which will generate a very high induced voltage on the parasitic inductance of the power loop, forming a voltage surge peak. This peak may exceed the rated voltage of the MOS tube, causing device breakdown damage.

[0004] 2. Parasitic oscillation: the gate and drain of multiple MOS tubes form a complex parasitic inductance and capacitance network through PCB traces. In the high-speed switching process, these parasitic parameters are prone to high-frequency oscillation, which is superimposed on the switching waveform, not only causing electromagnetic interference problems, but also possibly causing gate mis-triggering or exacerbating voltage stress.

[0005] Therefore, there is an urgent need for a control scheme that can actively and in real time suppress voltage surges in the multi-MOS parallel switching process. SUMMARY

[0006] The purpose of the present application is to provide a voltage surge prevention control circuit for multi-MOS parallel driving, to solve the problem that the existing voltage surge prevention control circuit cannot meet the demand of large current flow capacity.

[0007] In order to achieve the above purpose, the technical solutions adopted by the present application are as follows:

[0008] A voltage surge prevention control circuit for multi-MOS parallel driving, comprising a linear voltage stabilizing circuit, a voltage preprocessing circuit, a BOOST voltage boosting circuit, a reference control circuit, a MOS driving circuit and a multi-MOS parallel circuit, wherein the input end of the linear voltage stabilizing circuit is connected to an external DC voltage stabilizing power supply, the linear voltage stabilizing circuit, the voltage preprocessing circuit, the BOOST voltage boosting circuit, the reference control circuit, the MOS driving circuit and the multi-MOS parallel circuit are connected in sequence, and the output end of the multi-MOS parallel circuit is used to connect the input end of an external DC-DC power supply conversion module.

[0009] Compared with the prior art, the technical effects of the present application are as follows:

[0010] (1) The present application can use multiple MOS transistors in parallel by sequentially connecting a linear voltage stabilizing circuit, a voltage preprocessing circuit, a BOOST voltage boosting circuit, a reference control circuit, a MOS driving circuit, and a multi-MOS parallel circuit, and reasonably setting the parameters of the circuit components, thereby meeting the demand for large current flow capacity.

[0011] (2) The circuit structure of the present application is easy to implement and low in cost, and the surge output voltage can be flexibly adjusted according to the circuit parameters, which is suitable for being placed at the front end of most DC-DC power conversion modules, can effectively prevent the module from being damaged when there is a large surge voltage, and improves the safety and reliability of the DC-DC power conversion module, and is a voltage surge control circuit with excellent performance and practicality.

[0012] (3) The circuits in the present application are composed of discrete components, and the under-voltage and over-voltage protection points can be set according to needs, which is flexible and convenient to use and low in cost. BRIEF DESCRIPTION OF DRAWINGS

[0013] Figure 1 is a structural block diagram of the voltage surge control circuit for multi-MOS transistor parallel driving of the present application.

[0014] Figure 2 is a schematic diagram of the linear voltage stabilizing circuit, the voltage preprocessing circuit, the BOOST voltage boosting circuit, the reference control circuit, and the MOS driving circuit in the embodiment of the present application.

[0015] Figure 3 is a schematic diagram of the multi-MOS parallel circuit. DETAILED DESCRIPTION

[0016] The present application will be described in detail below in conjunction with the drawings and specific embodiments.

[0017] As shown in Figure 1 , the voltage surge control circuit for multi-MOS transistor parallel driving provided by the present application includes a linear voltage stabilizing circuit 1, a voltage preprocessing circuit 2, a BOOST voltage boosting circuit 3, a reference control circuit 4, a MOS driving circuit 5, and a multi-MOS parallel circuit 6, wherein the input end of the linear voltage stabilizing circuit 1 is connected to an external DC voltage stabilizing power supply, the linear voltage stabilizing circuit 1, the voltage preprocessing circuit 2, the BOOST voltage boosting circuit 3, the reference control circuit 4, the MOS driving circuit 5, and the multi-MOS parallel circuit 6 are connected in sequence, and the output end of the multi-MOS parallel circuit 6 is used to connect the input end of an external DC-DC power conversion module.

[0018] In the technical solution, the linear voltage stabilizing circuit 1 is used to stabilize the input voltage of the external DC voltage stabilizing power supply; the voltage preprocessing circuit 2 is used to convert the voltage stabilized by the linear voltage stabilizing circuit 1 and stabilize the output voltage to a specific value; the BOOST voltage boosting circuit 3 is used to convert the voltage output by the voltage preprocessing circuit 2 into a higher DC voltage; the reference control circuit 4 is used to compare the DC voltage output by the BOOST voltage boosting circuit 3 with the boosted voltage, thereby controlling the output voltage; the MOS driving circuit 5 is used to control the multi-MOS parallel circuit 6 according to the voltage output by the reference control circuit 4, so that the multi-MOS tubes in the multi-MOS parallel circuit 6 work in the linear region; and the multi-MOS parallel circuit 6 is used to realize large current conduction by the parallel connection of the multi-MOS tubes.

[0019] Embodiment 1

[0020] This embodiment is a preferred embodiment of the present application, and the design of each sub-circuit is as follows:

[0021] As shown in Figure 2 , the linear voltage stabilizing circuit 1 comprises a resistor R2, a transistor Q2, a voltage stabilizing tube D2, a capacitor C2 and a diode D3, wherein one end of the resistor R2 is connected with the collector of the transistor Q2, and the connection point serves as the input end of the linear voltage stabilizing circuit 1 and is connected with the output end VI+ of the external DC voltage stabilizing power supply; the other end of the resistor R2 is commonly connected with the base of the transistor Q2, one end of the capacitor C2 and the cathode of the voltage stabilizing tube D2; the emitter of the transistor Q2 serves as the output positive end VIN of the linear voltage stabilizing circuit 1 and is connected with the input end of the voltage preprocessing circuit 2; the cathode of the diode D3 is connected with the output ground end GND of the external DC voltage stabilizing power supply; the anode of the diode D3, the anode of the voltage stabilizing tube D2 and the other end of the capacitor C2 are commonly connected, and the connection point serves as the output ground end of the linear voltage stabilizing circuit 1. The linear voltage stabilizing circuit 1 designed in the above manner is easy to realize, has fast response speed, has no electromagnetic interference problem, has low voltage noise and small ripple in the output.

[0022] As shown in Figure 2As shown, the voltage preprocessing circuit 2 includes a linear voltage regulator U1, a capacitor C3 and a capacitor C4, wherein the 1 pin of the linear voltage regulator U1, one end of the capacitor C3 and one end of the capacitor C4 are commonly connected, and the connection point is connected to the output positive terminal VIN of the linear voltage stabilizing circuit 1 as the input terminal of the voltage preprocessing circuit 2, and is also connected to the input positive terminal of the BOOST voltage boosting circuit 3; the 2 pin of the linear voltage regulator U1 is connected to the other end of the capacitor C3, and the connection point is connected to the output ground terminal of the linear voltage stabilizing circuit 1; the 3 pin of the linear voltage regulator U1 is connected to the other end of the capacitor C4, and the connection point is connected to the output ground terminal of the voltage preprocessing circuit 2 and is also connected to the input ground terminal PGND of the BOOST voltage boosting circuit 3. The voltage preprocessing circuit 2 designed above has an extremely low voltage difference compared with the traditional linear voltage regulator, can work efficiently when the input voltage is slightly higher than the output voltage, greatly reduces the power loss and heat, and also has a wider input voltage range.

[0023] As Figure 2As shown, the BOOST boost circuit 3 includes resistors R6, R8, R9, R10, R11, RS1, diode D1, capacitors C5, C6, and C7, inductor L1, MOSFET Q1, and PWM controller U2. Pin 2 of the PWM controller U2 is connected to one end of resistor R6 and one end of inductor L1, and this connection point serves as the positive input terminal of the BOOST boost circuit 3, and is also connected to the first input terminal of the reference control circuit 4. Pin 3 of the PWM controller U2 is connected to the other end of resistor R6 and one end of resistor R8. Pin 8 of the PWM controller U2 is connected to one end of resistor R10. Pin 9 of the PWM controller U2 is connected to capacitor C7. Pin 5 of the PWM controller U2 is connected to the gate of MOSFET Q1. Pin 7 of the PWM controller U2 is connected to the source of MOSFET Q1. The terminals of the following circuits are connected together: pin 4 of PWM controller U2 is connected to one end of capacitor C5; pin 10 of PWM controller U2 is connected to one end of resistor R9 and one end of resistor R11; pin 6 of PWM controller U2 is connected to pin 1 of PWM controller U2, the other end of resistor R8, the other end of resistor R10, the other end of resistor RS1, the other end of resistor R11, the other end of capacitor C7, the other end of capacitor C5, and one end of capacitor C6. This connection point serves as the input ground terminal PGND of BOOST boost circuit 3; the drain of MOSFET Q1 is connected to the other end of inductor L1 and the anode of diode D1; the cathode of diode D1 is connected to the other end of resistor R9 and the other end of capacitor C6. This connection point serves as the output terminal of BOOST boost circuit 3, which is connected to the second input terminal of reference control circuit 4. The BOOST boost circuit 3 designed above is highly efficient and can flexibly generate a stable output voltage higher than the input voltage over a wide voltage range by changing the duty cycle of MOSFET Q1. This circuit controls the switching on and off of the MOSFET Q1 via the PWM controller U2, and also has protection functions such as input undervoltage and overcurrent.

[0024] like Figure 2 As shown, the reference control circuit 4 includes resistors R3 and R4, and a reference U3. One end of resistor R3 serves as the first input terminal of the reference control circuit 4, connected to the positive input terminal of the BOOST boost circuit 3. The other end of resistor R3 is connected to one end of resistor R4 and the reference R terminal of reference U3. The cathode of reference U3 is connected to the other end of resistor R4, and this connection point serves as the second input terminal of the reference control circuit 4, connected to the output terminal of the BOOST boost circuit 3. The anode of reference U3 serves as the output terminal of the reference control circuit 4, connected to the input terminal of the MOS drive circuit 5. The core of the reference control circuit 4 designed above is the reference source U3, which provides a highly stable and accurate reference voltage and is used to monitor and regulate the output voltage of the circuit. Compared with traditional circuits, this circuit has higher accuracy, better stability, lower dynamic impedance, and lower cost.

[0025] As shown in Figure 2 MOS drive circuit 5 includes resistance R1, resistance R5, resistance R7, capacitor C1 and diode D4, wherein one end of resistance R5 is connected with one end of resistance R7, and the connecting point is connected with the output end of reference control circuit 4 as the input end of MOS drive circuit 5; the other end of resistance R5 is commonly connected with one end of resistance R1, one end of capacitor C1 and the cathode of diode D4; the anode of diode D4 is commonly connected with the other end of resistance R7 and the output ground end GND of external DC voltage stabilizing power supply; the other end of resistance R1 is connected with the other end of capacitor C1, and the connecting point is connected with the input end of multi-MOS parallel circuit 6 as the output end OD of MOS drive circuit 5. The above designed MOS drive circuit 5 is easy to realize, and when it is connected with multi-MOS parallel circuit 6, it can control the gate-source voltage of multiple MOS tubes at the same time, so that these parallel MOS tubes are all in linear region, thereby controlling the output voltage of the whole anti-voltage surge control circuit for multi-MOS parallel drive of the application. Table 1 shows the product name and parameter description of each component in linear voltage stabilizing circuit 1, voltage preprocessing circuit 2, BOOST voltage boosting circuit 3, reference control circuit 4 and MOS drive circuit 5:

[0026] Table 1: selection parameter of each circuit component

[0027]

[0028] As shown in Figure 3As shown, the multi-MOS parallel circuit 6 includes a resistor R12, a resistor R13, a resistor R14, a resistor R15, a resistor R16, a resistor R17, a resistor R18, a resistor R19, a resistor R20, a resistor R21, a resistor R22, a resistor R23, a resistor R24, a resistor R25, a resistor R26, a resistor R27, a resistor R28, a resistor R29, a resistor R30, a resistor R31, a resistor R32, a resistor R33, a resistor R34, a resistor R35, a resistor R36, a resistor R37, a resistor R38, a resistor R39, a MOS Q3, a MOS Q4, a MOS Q5, a MOS Q6, a MOS Q7, a MOS Q8, a MOS Q9, a MOS Q10, a MOS Q11, a MOS Q12, a MOS Q13, a MOS Q14, a MOS Q15, a MOS Q16, a MOS Q17, a MOS Q18, a MOS Q19, a MOS Q20, a MOS Q21, a MOS Q22, a MOS Q23, a MOS Q24, a MOS Q25, a MOS Q26, a MOS Q27, a MOS Q28, a MOS Q29, and a MOS Q30. One end of the resistor R12, the resistor R13, the resistor R14, the resistor R15, the resistor R16, the resistor R17, the resistor R18, the resistor R19, the resistor R20, the resistor R21, the resistor R22, the resistor R23, the resistor R24, the resistor R25, the resistor R26, the resistor R27, the resistor R28, the resistor R29, the resistor R30, the resistor R31, the resistor R32, the resistor R33, the resistor R34, the resistor R35, the resistor R36, the resistor R37, the resistor R38, and the resistor R39 is commonly connected, and the connection point is connected to the output end OD of the MOS driving circuit 5 as the input end of the multi-MOS parallel circuit 6.

[0029] The other end of the resistance R12, the resistance R13, the resistance R14, the resistance R15, the resistance R16, the resistance R17, the resistance R18, the resistance R19, the resistance R20, the resistance R21, the resistance R22, the resistance R23, the resistance R24, the resistance R25, the resistance R26, the resistance R27, the resistance R28, the resistance R29, the resistance R30, the resistance R31, the resistance R32, the resistance R33, the resistance R34, the resistance R35, the resistance R36, the resistance R37, the resistance R38, and the resistance R39 is connected to the gate of the MOS tube Q12, the MOS tube Q13, the MOS tube Q14, the MOS tube Q15, the MOS tube Q16, the MOS tube Q17, the MOS tube Q18, the MOS tube Q19, the MOS tube Q20, the MOS tube Q21, the MOS tube Q22, the MOS tube Q23, the MOS tube Q24, the MOS tube Q25, the MOS tube Q26, the MOS tube Q27, the MOS tube Q28, the MOS tube Q29, the MOS tube Q30, the MOS tube Q3, the MOS tube Q4, the MOS tube Q5, the MOS tube Q6, the MOS tube Q7, the MOS tube Q8, the MOS tube Q9, the MOS tube Q10, and the MOS tube Q11 in sequence.

[0030] The drain of the MOS tube Q3, the MOS tube Q4, the MOS tube Q5, the MOS tube Q6, the MOS tube Q7, the MOS tube Q8, the MOS tube Q9, the MOS tube Q10, the MOS tube Q11, the MOS tube Q12, the MOS tube Q13, the MOS tube Q14, the MOS tube Q15, the MOS tube Q16, the MOS tube Q17, the MOS tube Q18, the MOS tube Q19, the MOS tube Q20, the MOS tube Q21, the MOS tube Q22, the MOS tube Q23, the MOS tube Q24, the MOS tube Q25, the MOS tube Q26, the MOS tube Q27, the MOS tube Q28, the MOS tube Q29, and the MOS tube Q30 is connected to the output end VI+ of the external DC voltage stabilizer.

[0031] The source of the MOS tube Q3, the MOS tube Q4, the MOS tube Q5, the MOS tube Q6, the MOS tube Q7, the MOS tube Q8, the MOS tube Q9, the MOS tube Q10, the MOS tube Q11, the MOS tube Q12, the MOS tube Q13, the MOS tube Q14, the MOS tube Q15, the MOS tube Q16, the MOS tube Q17, the MOS tube Q18, the MOS tube Q19, the MOS tube Q20, the MOS tube Q21, the MOS tube Q22, the MOS tube Q23, the MOS tube Q24, the MOS tube Q25, the MOS tube Q26, the MOS tube Q27, the MOS tube Q28, the MOS tube Q29, and the MOS tube Q30 is commonly connected, and the connection point is connected to the input end VO+ of the external DC-DC power conversion module as the output end of the multi-MOS parallel circuit 6 (that is, the output end of the whole voltage surge prevention control circuit for multi-MOS parallel driving of the application).

[0032] In the above technical solution, the output end VI+ of the external DC voltage stabilizing power supply is directly connected to the drain of the plurality of parallel MOS transistors in the multi-MOS parallel circuit 6, the input and output of the multi-MOS parallel circuit 6 are grounded at GND, the MOS transistor driving circuit 5 controls the voltage of the output end QD to the ground GND, so that the plurality of parallel MOS transistors in the multi-MOS parallel circuit 6 are simultaneously driven and work in the linear region, and finally the function of controlling the output voltage is achieved, and then the surge control is performed on the external DC / DC power supply conversion module connected to the multi-MOS parallel circuit 6. Table 2 shows the product names and parameter explanations of each component in the multi-MOS parallel circuit 6.

[0033] Table 2 Component selection parameters in the multi-MOS parallel circuit

[0034]

[0035] The detailed working process of the circuit of the embodiment is as follows:

[0036] VI+ is the output terminal of external DC voltage stabilizing power supply, its reference ground is GND; voltage VI+ is connected to linear voltage stabilizing circuit 1, when voltage VI+ does not exceed the reverse breakdown voltage of stabilizing tube D2, the voltage of output positive terminal VIN of linear voltage stabilizing circuit 1 follows voltage VI+, when VI+ exceeds the reverse breakdown voltage of stabilizing tube D2, the voltage of output positive terminal VIN of linear voltage stabilizing circuit 1 is stabilized to the reverse breakdown voltage of stabilizing tube D2, GND is raised to the conduction voltage of diode D3 through diode D1; the output positive terminal VIN of linear voltage stabilizing circuit 1 is connected to voltage pre-processing circuit 2, VIN is unchanged, the reference ground is raised to PGND, the output voltage of voltage pre-processing circuit 2 is a stable voltage; the output voltage of voltage pre-processing circuit 2 is connected to BOOST voltage boosting circuit 3 again, the BOOST voltage boosting circuit 3 controls the opening and closing time of MOS tube Q1 through PWM controller U2, thereby controlling the storage and release of energy of inductor L1, and then controls the output voltage through the voltage division of output resistor, and a stable DC voltage higher than the input voltage is obtained through the filtering effect of capacitor C6. At the same time, the input under-voltage protection can be realized by the voltage division of resistors R6 and R8 connected to the 3th pin of PWM controller U2, the working frequency of the circuit can be adjusted by connecting resistor R10 to the 8th pin of PWM controller U2, the soft start time of the circuit can be adjusted by connecting capacitor C7 to the 9th pin of PWM controller U2, the output voltage over-voltage protection can be realized by connecting capacitor C5 to the 4th pin of PWM controller U2, and the output short-circuit protection can be realized by connecting resistor RS1 to the 7th pin of PWM controller U2; the output voltage of voltage pre-processing circuit 2 is divided by resistors R3 and R4 and connected to reference U3, and compared with the output voltage of BOOST voltage boosting circuit 3, thereby controlling the opening and closing of switch tube in reference U3, and affecting the output of reference control circuit 4; the output of reference control circuit 4 is connected to GND through resistor R7, when the voltage of QD point to GND exceeds a certain voltage value, stabilizing tube D4 stabilizes this voltage to this value and no longer rises, thereby achieving the effect of suppressing output.

[0037] The above is only a specific embodiment of the present application, but the protection scope of the present application is not limited thereto, any skilled person in the art can think of changes or replacements within the technical range disclosed by the present application without creative labor, which should be covered within the protection scope of the present application.

Claims

1. A control circuit for preventing voltage surge for multi-MOSFET parallel driving, characterized in that, The application relates to a linear voltage stabilizing circuit, which comprises a linear voltage stabilizing circuit (1), a voltage preprocessing circuit (2), a BOOST voltage increasing circuit (3), a reference control circuit (4), a MOS driving circuit (5) and a multi-MOS parallel circuit (6), wherein the input end of the linear voltage stabilizing circuit (1) is connected with an external direct-current voltage stabilizing power supply; the linear voltage stabilizing circuit (1), the voltage preprocessing circuit (2), the BOOST voltage increasing circuit (3), the reference control circuit (4), the MOS driving circuit (5) and the multi-MOS parallel circuit (6) are sequentially connected; and the output end of the multi-MOS parallel circuit (6) is used for connecting the input end of an external DC-DC power supply conversion module. The linear voltage stabilizing circuit (1) comprises a resistor R2, a triode Q2, a voltage stabilizing tube D2, a capacitor C2 and a diode D3, wherein one end of the resistor R2 is connected with the collector of the triode Q2, the connecting point is used as the input end of the linear voltage stabilizing circuit (1) and is connected with the output end of the external direct-current voltage stabilizing power supply; the other end of the resistor R2 is commonly connected with the base of the triode Q2, one end of the capacitor C2 and the cathode of the voltage stabilizing tube D2; the emitter of the triode Q2 is used as the output positive end VIN of the linear voltage stabilizing circuit (1) and is connected with the input end of the voltage preprocessing circuit (2); the cathode of the diode D3 is connected with the output ground end of the external direct-current voltage stabilizing power supply; the anode of the diode D3, the anode of the voltage stabilizing tube D2 and the other end of the capacitor C2 are commonly connected, and the connecting point is used as the output ground end of the linear voltage stabilizing circuit (1). The voltage preprocessing circuit (2) comprises a linear voltage stabilizer U1, a capacitor C3 and a capacitor C4, wherein the 1 pin of the linear voltage stabilizer U1, one end of the capacitor C3 and one end of the capacitor C4 are commonly connected, the connecting point is used as the input end of the voltage preprocessing circuit (2) and is connected with the output positive end of the linear voltage stabilizing circuit (1) and the input positive end of the BOOST voltage increasing circuit (3); the 2 pin of the linear voltage stabilizer U1 is connected with the other end of the capacitor C3, and the connecting point is connected with the output ground end of the linear voltage stabilizing circuit (1); the 3 pin of the linear voltage stabilizer U1 is connected with the other end of the capacitor C4, and the connecting point is used as the output ground end of the voltage preprocessing circuit (2) and is connected with the input ground end of the BOOST voltage increasing circuit (3).

2. The control circuit for preventing voltage surge of the parallel driving of multiple MOSFETs according to claim 1, wherein, The BOOST voltage circuit (3) comprises resistance R6, resistance R8, resistance R9, resistance R10, resistance R11, resistance RS1, diode D1, capacitor C5, capacitor C6, capacitor C7, inductor L1, MOS tube Q1 and PWM controller U2, wherein the 2-pin of the PWM controller U2 is connected with one end of the resistance R6 and one end of the inductor L1, and the connecting point is the input positive terminal of the BOOST voltage circuit (3) and the first input terminal of the reference control circuit (4); the 3-pin of the PWM controller U2 is connected with the other end of the resistance R6 and one end of the resistance R8; the 8-pin of the PWM controller U2 is connected with one end of the resistance R10; the 9-pin of the PWM controller U2 is connected with the capacitor C7; the 5-pin of the PWM controller U2 is connected with the gate of the MOS tube Q1; the 7-pin of the PWM controller U2 is connected with the source of the MOS tube Q1 and one end of the resistance RS1; the 4-pin of the PWM controller U2 is connected with one end of the capacitor C5; the 10-pin of the PWM controller U2 is connected with one end of the resistance R9 and one end of the resistance R11; the 6-pin of the PWM controller U2 is connected with the 1-pin of the PWM controller U2, the other end of the resistance R8, the other end of the resistance R10, the other end of the resistance RS1, the other end of the resistance R11, the other end of the capacitor C7, the other end of the capacitor C5, one end of the capacitor C6, and the connecting point is the input ground terminal of the BOOST voltage circuit (3); the drain of the MOS tube Q1 is connected with the other end of the inductor L1 and the anode of the diode D1; the cathode of the diode D1 is connected with the other end of the resistance R9 and the other end of the capacitor C6, and the connecting point is the output terminal of the BOOST voltage circuit (3) and the second input terminal of the reference control circuit (4).

3. The control circuit for preventing voltage surge of the parallel driving of multiple MOSFETs according to claim 2, wherein, The reference control circuit (4) comprises resistance R3, resistance R4 and reference U3, wherein one end of the resistance R3 is the first input terminal of the reference control circuit (4) and is connected with the input positive terminal of the BOOST voltage circuit (3); the other end of the resistance R3 is connected with one end of the resistance R4 and the reference R terminal of the reference U3; the cathode of the reference U3 is connected with the other end of the resistance R4, and the connecting point is the second input terminal of the reference control circuit (4) and is connected with the output terminal of the BOOST voltage circuit (3); the anode of the reference U3 is the output terminal of the reference control circuit (4) and is connected with the input terminal of the MOS drive circuit (5).

4. The control circuit for preventing voltage surge of the parallel driving of multiple MOSFETs according to claim 3, wherein, The MOS drive circuit (5) includes resistance R1, resistance R5, resistance R7, capacitor C1 and diode D4, wherein one end of the resistance R5 is connected with one end of resistance R7, and the connecting point is connected with the output end of the reference control circuit (4) as the input end of the MOS drive circuit (5); the other end of the resistance R5 is commonly connected with one end of the resistance R1, one end of the capacitor C1 and the cathode of the diode D4; the anode of the diode D4 is commonly connected with the other end of the resistance R7 and the output ground end of the external DC voltage stabilizer; the other end of the resistance R1 is connected with the other end of the capacitor C1, and the connecting point is connected with the input end of the multi-MOS parallel circuit (6) as the output end OD of the MOS drive circuit (5).

5. The control circuit for preventing voltage surge of the parallel driving of multiple MOSFETs according to claim 4, wherein, The multi-MOS parallel circuit (6) includes resistance R12, resistance R13, resistance R14, resistance R15, resistance R16, resistance R17, resistance R18, resistance R19, resistance R20, resistance R21, resistance R22, resistance R23, resistance R24, resistance R25, resistance R26, resistance R27, resistance R28, resistance R29, resistance R30, resistance R31, resistance R32, resistance R33, resistance R34, resistance R35, resistance R36, resistance R37, resistance R38, resistance R39, MOS tube Q3, MOS tube Q4, MOS tube Q5, MOS tube Q6, MOS tube Q7, MOS tube Q8, MOS tube Q9, MOS tube Q10, MOS tube Q11, MOS tube Q12, MOS tube Q13, MOS tube Q14, MOS tube Q15, MOS tube Q16, MOS tube Q17, MOS tube Q18, MOS tube Q19, MOS tube Q20, MOS tube Q21, MOS tube Q22, MOS tube Q23, MOS tube Q24, MOS tube Q25, MOS tube Q26, MOS tube Q27, MOS tube Q28, MOS tube Q29, MOS tube Q30, wherein one end of the resistance R12, resistance R13, resistance R14, resistance R15, resistance R16, resistance R17, resistance R18, resistance R19, resistance R20, resistance R21, resistance R22, resistance R23, resistance R24, resistance R25, resistance R26, resistance R27, resistance R28, resistance R29, resistance R30, resistance R31, resistance R32, resistance R33, resistance R34, resistance R35, resistance R36, resistance R37, resistance R38, resistance R39 is commonly connected, and the connecting point is connected with the output end of the MOS drive circuit (5) as the input end of the multi-MOS parallel circuit (6). The other end of the resistance R12, resistance R13, resistance R14, resistance R15, resistance R16, resistance R17, resistance R18, resistance R19, resistance R20, resistance R21, resistance R22, resistance R23, resistance R24, resistance R25, resistance R26, resistance R27, resistance R28, resistance R29, resistance R30, resistance R31, resistance R32, resistance R33, resistance R34, resistance R35, resistance R36, resistance R37, resistance R38, resistance R39 is connected to the gate of the MOS tube Q12, MOS tube Q13, MOS tube Q14, MOS tube Q15, MOS tube Q16, MOS tube Q17, MOS tube Q18, MOS tube Q19, MOS tube Q20, MOS tube Q21, MOS tube Q22, MOS tube Q23, MOS tube Q24, MOS tube Q25, MOS tube Q26, MOS tube Q27, MOS tube Q28, MOS tube Q29, MOS tube Q30, MOS tube Q3, MOS tube Q4, MOS tube Q5, MOS tube Q6, MOS tube Q7, MOS tube Q8, MOS tube Q9, MOS tube Q10, MOS tube Q11 in sequence. The drain of the MOS tube Q3, MOS tube Q4, MOS tube Q5, MOS tube Q6, MOS tube Q7, MOS tube Q8, MOS tube Q9, MOS tube Q10, MOS tube Q11, MOS tube Q12, MOS tube Q13, MOS tube Q14, MOS tube Q15, MOS tube Q16, MOS tube Q17, MOS tube Q18, MOS tube Q19, MOS tube Q20, MOS tube Q21, MOS tube Q22, MOS tube Q23, MOS tube Q24, MOS tube Q25, MOS tube Q26, MOS tube Q27, MOS tube Q28, MOS tube Q29, MOS tube Q30 is connected to the output end of the external DC voltage stabilizing power supply. The source of the MOS tube Q3, MOS tube Q4, MOS tube Q5, MOS tube Q6, MOS tube Q7, MOS tube Q8, MOS tube Q9, MOS tube Q10, MOS tube Q11, MOS tube Q12, MOS tube Q13, MOS tube Q14, MOS tube Q15, MOS tube Q16, MOS tube Q17, MOS tube Q18, MOS tube Q19, MOS tube Q20, MOS tube Q21, MOS tube Q22, MOS tube Q23, MOS tube Q24, MOS tube Q25, MOS tube Q26, MOS tube Q27, MOS tube Q28, MOS tube Q29, MOS tube Q30 is commonly connected, and the connection point is connected to the input end of the external DC-DC power conversion module as the output end of the multi-MOS parallel circuit (6).

Images