High-power radio frequency GaN power amplifier module

Abstract

The invention provides a high-power radio frequency GaN power amplifier module which comprises a signal input end, an input external matching circuit, a power tube input matching circuit, a GaN parallel circuit, a power amplifier tube output matching circuit, an output external matching circuit and a signal output end. The radio frequency power amplifier has the advantages of improving the efficiency of the radio frequency power amplifier, increasing the impedance of the pin by using the input external matching network, reducing the external matching area of the radio frequency power amplifier, being compact and simple in structure, simplifying the design process of power amplifiers of the same type, being high in efficiency and small in size, and having important application prospects in the aspects of industrial heating, medical tumor treatment, military affairs and the like.

Description

Technical Field

[0001] This invention belongs to the technical field of high-power amplifiers, specifically relating to a high-power radio frequency GaN power amplifier module. Background Technology

[0002] GaN power amplifiers are power amplifier modules that use gallium nitride (GaN) as their core component. GaN power amplifier modules employ a three-stage gain amplification architecture designed to provide efficient power amplification. The final stage amplifier circuit utilizes a push-pull structure to ensure stable high-power output. The module's mechanical structure design takes miniaturization and heat dissipation requirements into account, achieving integration of the upper and lower cavities.

[0003] In practice, using a single die to make a high-power amplifier will result in poor heat dissipation and severe power degradation. At the same time, the output current of a traditional high-power GaN amplifier contains various harmonic components, the most important of which is the second harmonic component. The second harmonic will seriously affect the fundamental frequency, thus affecting efficiency. Summary of the Invention

[0004] To address the aforementioned technical problems, this invention provides a high-power radio frequency GaN power amplifier module to solve the issues mentioned in the background section.

[0005] In a first aspect, the invention provides the following technical solution: a high-power radio frequency GaN power amplifier module, the high-power radio frequency GaN power amplifier module including a signal input terminal, an input external matching circuit, a power transistor input matching circuit, a GaN parallel circuit, a power amplifier transistor output matching circuit, an output external matching circuit, and a signal output terminal; The input terminal of the external matching circuit is connected to the signal input terminal. The external matching circuit is used to suppress the second harmonic and open the fundamental frequency of the signal input to the signal input terminal, and to provide the gate voltage for the power transistor. The input terminal of the power transistor input matching circuit is connected to the output terminal of the external input matching circuit. The power transistor input matching circuit is used to achieve basic network matching and perform second harmonic suppression or attenuation. The input terminal of the GaN parallel circuit is connected to the output terminal of the power transistor input matching circuit. The GaN parallel circuit is used to convert DC energy into AC energy to amplify the input signal. The input terminal of the power amplifier tube output matching circuit is connected to the output terminal of the GaN parallel circuit. The power amplifier tube output matching circuit is used to initially increase the impedance of the GaN die. The input terminal of the external matching circuit is connected to the output terminal of the power amplifier tube output matching circuit, and the output terminal of the external matching circuit is connected to the signal output terminal. The external matching circuit is used for second harmonic suppression, fundamental frequency open circuit, and to provide drain voltage for the power tube.

[0006] Compared with the prior art, the beneficial effects of this application are as follows: This invention designs a high-power, high-efficiency GaN RF power amplifier module with a working frequency of 1.8GHz, a saturated output power of 400W, and a drain efficiency of 74%. The module consists of two parts: a pre-matched power transistor and an external matching circuit board. The pre-matched power transistor internally uses two GaNHEMT chips with a total gate width of 24mm connected in parallel. The input matching network adopts a dual low-pass filter architecture, which short-circuits the second harmonic signal to ground. On the external matching circuit board, the input and output power supply microstrip line structure adopts a 1 / 4 wavelength line harmonic suppression structure. At the fundamental frequency and higher-order odd harmonic frequencies, the transmission line is open-circuited. The transmission line exhibits a short circuit at even harmonic frequencies, while higher-order odd harmonics cause the output voltage waveform to approach a square wave shape, increasing the minimum output voltage and helping to eliminate the impact of the double peak of output current introduced by the Knee voltage on output power and efficiency. Furthermore, this invention combines an LC resonant structure with a quarter-wavelength line, improving the efficiency of the RF power amplifier. Simultaneously, the external matching network increases the impedance of the pins, reducing the external matching area of ​​the RF power amplifier. The compact and simple structure simplifies the design process of similar power amplifiers. Its high efficiency and small size make this invention promising for applications in industrial heating, medical oncology treatment, and military fields.

[0007] Preferably, the input external matching circuit includes an input matching section, an input 50Ω line, a first input filter circuit, a second input filter circuit, a first input 1 / 4 wavelength line circuit, and a second input 1 / 4 wavelength line circuit. The first input 1 / 4 wavelength line circuit, the second input 1 / 4 wavelength line circuit, and the input 50Ω line are respectively connected to the input matching section. The first input filter circuit is connected to the first input 1 / 4 wavelength line circuit, and the second input filter circuit is connected to the second input 1 / 4 wavelength line circuit.

[0008] Preferably, the input 50Ω line includes a first microstrip line structure, a first capacitor, and a second microstrip line structure connected in series. The input matching section includes a third, fourth, fifth, eighth, and ninth microstrip line structure connected in series. The second microstrip line structure is connected to the third microstrip line structure. The first input 1 / 4 wavelength line circuit includes a first resistor connected to the fifth microstrip line structure, a sixth microstrip line structure connected to the first resistor, and a third capacitor connected to the sixth microstrip line structure. The first input filter circuit includes a seventh microstrip line structure connected between the third capacitor and the sixth microstrip line structure, and a second capacitor connected to the seventh microstrip line structure. The second input 1 / 4 wavelength line circuit includes a second resistor connected to the ninth microstrip line structure, a tenth microstrip line structure connected to the second resistor, and an eighth capacitor connected to the tenth microstrip line structure. The second input filter circuit includes an eleventh microstrip line structure connected between the eighth capacitor and the tenth microstrip line structure, and a ninth capacitor connected to the eleventh microstrip line structure.

[0009] Preferably, the power transistor input matching circuit includes a first inductor and a fourth inductor connected in parallel. A second inductor and a third inductor are connected in series on the branch where the first inductor is located. A fourth capacitor and a fifth capacitor are respectively provided between the first inductor and the second inductor, and between the second inductor and the third inductor. A fifth inductor and a sixth inductor are connected in series on the branch where the fourth inductor is located. A sixth capacitor and a seventh capacitor are respectively provided between the fourth inductor and the fifth inductor, and between the fifth inductor and the sixth inductor.

[0010] Preferably, the GaN parallel circuit includes a first GaN chip and a second GaN chip connected in parallel, both of which are GaN HEMT chips with a total gate width of 24mm.

[0011] Preferably, the power amplifier tube output matching circuit includes a seventh inductor and an eighth inductor connected in parallel.

[0012] Preferably, the output external matching circuit includes an output matching section, an output 50Ω line, a first output filter circuit, a second output filter circuit, a first output 1 / 4 wavelength line circuit, and a second output 1 / 4 wavelength line circuit. The first output 1 / 4 wavelength line circuit, the second output 1 / 4 wavelength line circuit, and the output 50Ω line are respectively connected to the output matching section. The first output filter circuit is connected to the first output 1 / 4 wavelength line circuit, and the second output filter circuit is connected to the second output 1 / 4 wavelength line circuit.

[0013] Preferably, the output 50Ω line includes a 21st microstrip line structure, a 14th capacitor, and a 22nd microstrip line structure connected in series; the output matching section includes a 14th, 15th, 16th, 17th, and 18th microstrip line structure connected in series; the 21st microstrip line structure is connected to the 16th microstrip line structure; the first output 1 / 4 wavelength line circuit includes a 13th microstrip line structure connected to the 14th microstrip line structure and a 10th capacitor connected to the 13th microstrip line structure; the first output filter circuit includes a 12th microstrip line structure connected between the 10th capacitor and the 13th microstrip line structure and a 12th capacitor connected to the 12th microstrip line structure; the second output 1 / 4 wavelength line circuit includes a 19th microstrip line structure connected to the 18th microstrip line structure and an 11th capacitor connected to the 19th microstrip line structure; the second output filter circuit includes a 20th microstrip line structure connected between the 11th capacitor and the 19th microstrip line structure and a 13th capacitor connected to the 20th microstrip line structure. Attached Figure Description

[0014] To more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0015] Figure 1 A circuit diagram of a high-power radio frequency GaN power amplifier module provided for an embodiment of the present invention; Figure 2 A circuit diagram of the input external matching circuit provided in an embodiment of the present invention; Figure 3 A circuit diagram of the power transistor input matching circuit provided in an embodiment of the present invention; Figure 4 A circuit diagram of the GaN parallel circuit and the power amplifier tube output matching circuit provided in an embodiment of the present invention; Figure 5 The circuit diagram is provided for the output external matching circuit in an embodiment of the present invention.

[0016] Explanation of reference numerals in the attached figures:

[0017] The embodiments of the present invention will be further described below with reference to the accompanying drawings. Detailed Implementation

[0018] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain embodiments of the present invention, and should not be construed as limiting the present invention.

[0019] In the description of the embodiments of the present invention, it should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the present invention.

[0020] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of embodiments of the present invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0021] In the embodiments of the present invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of the present invention according to the specific circumstances.

[0022] like Figure 1 As shown, in an embodiment of the present invention, the invention provides the following technical solution: a high-power radio frequency GaN power amplifier module, the high-power radio frequency GaN power amplifier module including a signal input terminal 6, an input external matching circuit 1, a power tube input matching circuit 2, a GaN parallel circuit 3, a power amplifier tube output matching circuit 4, an output external matching circuit 5, and a signal output terminal 7. The input terminal of the external matching circuit 1 is connected to the signal input terminal 6. The external matching circuit 1 is used to suppress the second harmonic and open the fundamental frequency of the signal input to the signal input terminal 6, and to provide the gate voltage for the power transistor. The input terminal of the power transistor input matching circuit 2 is connected to the output terminal of the external input matching circuit 1. The power transistor input matching circuit 2 is used to achieve basic network matching and perform second harmonic suppression or attenuation. The input terminal of the GaN parallel circuit 3 is connected to the output terminal of the power transistor input matching circuit 2. The GaN parallel circuit 3 is used to convert DC energy into AC energy to amplify the input signal. The input terminal of the power amplifier tube output matching circuit 4 is connected to the output terminal of the GaN parallel circuit 3. The power amplifier tube output matching circuit 4 is used to initially increase the impedance of the GaN die. The input terminal of the external matching circuit 5 is connected to the output terminal of the power amplifier tube 4 output matching circuit, and the output terminal of the external matching circuit 5 is connected to the signal output terminal 7. The external matching circuit 5 is used for second harmonic suppression and fundamental frequency open circuit and to provide drain voltage for the power tube.

[0023] The input matching circuit 1 includes an input matching section, an input 50Ω line, a first input filter circuit, a second input filter circuit, a first input 1 / 4 wavelength line circuit, and a second input 1 / 4 wavelength line circuit. The first input 1 / 4 wavelength line circuit, the second input 1 / 4 wavelength line circuit, and the input 50Ω line are respectively connected to the input matching section. The first input filter circuit is connected to the first input 1 / 4 wavelength line circuit, and the second input filter circuit is connected to the second input 1 / 4 wavelength line circuit.

[0024] The 50Ω input line is used to connect the RFin radio frequency signal. The input matching section is used to transmit the input signal and simultaneously match the 50-ohm input signal to the pin impedance. The first and second input 1 / 4 wavelength line circuits are used to suppress second harmonics and open the fundamental frequency of the input signal. The first and second input filter circuits are used to remove the influence of the DC power supply on the radio frequency signal. The first and second input filter circuits, together with the first and second input 1 / 4 wavelength line circuits, form a power supply circuit to provide the gate voltage to the power transistor.

[0025] like Figure 2As shown, the input 50Ω line includes a first microstrip line structure 16, a first capacitor 17, and a second microstrip line structure 18 connected in series. The input matching section includes a third microstrip line structure 11, a fourth microstrip line structure 12, a fifth microstrip line structure 15, an eighth microstrip line structure 13, and a ninth microstrip line structure 14 connected in series. The second microstrip line structure 18 is connected to the third microstrip line structure 11. The first input 1 / 4 wavelength line circuit includes a first resistor 19 connected to the fifth microstrip line structure 15, a sixth microstrip line structure 110 connected to the first resistor 19, and a third capacitor 111 connected to the sixth microstrip line structure 110. The first input filter... The circuit includes a seventh microstrip line structure 112 connected between the third capacitor 111 and the sixth microstrip line structure 110, a second capacitor 113 connected to the seventh microstrip line structure 112, the second input 1 / 4 wavelength line circuit includes a second resistor 114 connected to the ninth microstrip line structure 14, a tenth microstrip line structure 115 connected to the second resistor 114, and an eighth capacitor 118 connected to the tenth microstrip line structure 115, and the second input filter circuit includes an eleventh microstrip line structure 117 connected between the eighth capacitor 118 and the tenth microstrip line structure 115, and a ninth capacitor 116 connected to the eleventh microstrip line structure 117; Among them, the sixth microstrip line structure 110 and the tenth microstrip line structure 115 are both 1 / 4 wavelength lines corresponding to 1.8 GHz, the first microstrip line structure 16 and the second microstrip line structure 17 are both 50Ω lines, the first capacitor 17 is specifically a DC blocking capacitor, the second capacitor 113 and the ninth capacitor 116 are both filter capacitors, the third capacitor 111 and the eighth capacitor 118 are both bias capacitors, the first resistor 19 and the second resistor 114 are both gate stabilizing resistors, the first microstrip line structure 16 and the second microstrip line structure 18 can be used as DC blocking current circuits, the sixth microstrip line structure 110 and the third capacitor 111 can be used as the upper half gate bias circuit, the second capacitor 113 and the seventh microstrip line structure 112 can be used as the upper half gate filter circuit, the tenth microstrip line structure 115 and the eighth capacitor 118 can be used as the lower half gate bias circuit, and the ninth capacitor 116 and the eleventh microstrip line structure 117 can be used as the lower half gate filter circuit.

[0026] like Figure 3As shown, the power transistor input matching circuit 2 includes a first inductor 21 and a fourth inductor 26 connected in parallel. A second inductor 22 and a third inductor 23 are connected in series on the branch where the first inductor 21 is located. A fourth capacitor 24 and a fifth capacitor 25 are respectively provided between the first inductor 21 and the second inductor 22, and between the second inductor 22 and the third inductor 23. A fifth inductor 26 and a sixth inductor 27 are connected in series on the branch where the fourth inductor 25 is located. A sixth capacitor 28 and a seventh capacitor 29 are respectively provided between the fourth inductor 25 and the fifth inductor 26, and between the fifth inductor 26 and the sixth inductor 27. Specifically, capacitors 24 to 29 are all internal matching capacitors for the RF power transistor, and inductors 21 to 28 are all internal matching inductors for the input. By introducing two branches, namely the branch containing inductor 21 and the branch containing inductor 25, the branch containing inductor 21 forms the upper half of the dual low-pass matching network, and the branch containing inductor 25 forms the lower half of the dual low-pass matching network. These networks form an LCLCL dual low-pass network, which has two functions: first, basic network matching, and second, second, second harmonic suppression or attenuation.

[0027] like Figure 4 As shown, the GaN parallel circuit 3 includes a first GaN chip 31 and a second GaN chip 32 connected in parallel. Both the first GaN chip 31 and the second GaN chip 32 are GaN HEMT chips with a total gate width of 24mm. In this design, not only are the first GaN chip 31 and the second GaN chip 32 connected in parallel, but the gate and drain of the chips are also interconnected to reduce the impact of phase difference.

[0028] The power amplifier tube output matching circuit 4 includes a seventh inductor 41 and an eighth inductor 42 connected in parallel. Among them, the seventh inductor 41 and the eighth inductor 42 are both output internal matching inductors, and the seventh inductor 41 and the eighth inductor 42 respectively form the upper and lower half of the output matching network.

[0029] The output matching circuit 5 includes an output matching section, an output 50Ω line, a first output filter circuit, a second output filter circuit, a first output 1 / 4 wavelength line circuit, and a second output 1 / 4 wavelength line circuit. The first output 1 / 4 wavelength line circuit, the second output 1 / 4 wavelength line circuit, and the output 50Ω line are respectively connected to the output matching section. The first output filter circuit is connected to the first output 1 / 4 wavelength line circuit, and the second output filter circuit is connected to the second output 1 / 4 wavelength line circuit. Specifically, the output matching section is used to transmit the input signal and simultaneously match the output impedance of the power transistor to 50Ω. The first and second output 1 / 4 wavelength line circuits are used to suppress second harmonics and open the fundamental frequency of the output signal. The first and second output filter circuits are used to remove the influence of the DC power supply on the RF signal. The first and second output filter circuits, together with the first and second output 1 / 4 wavelength line circuits, form a power supply circuit to provide the drain voltage to the power transistor.

[0030] like Figure 5 As shown, the output 50Ω line includes a 21st microstrip line structure 58, a 14th capacitor 57, and a 22nd microstrip line structure 56 connected in series. The output matching section includes a 14th microstrip line structure 55, a 15th microstrip line structure 52, a 16th microstrip line structure 51, a 17th microstrip line structure 53, and an 18th microstrip line structure 54 connected in series. The 21st microstrip line structure 58 is connected to the 16th microstrip line structure 51. The first output 1 / 4 wavelength line circuit includes a 13th microstrip line structure 59 connected to the 14th microstrip line structure 55 and a 10th capacitor 510 connected to the 13th microstrip line structure 59. The output filter circuit includes a twelfth microstrip line structure 511 connected between the tenth capacitor 510 and the thirteenth microstrip line structure 59, and a twelfth capacitor 512 connected to the twelfth microstrip line structure 511. The second output 1 / 4 wavelength line circuit includes a nineteenth microstrip line structure 513 connected to the eighteenth microstrip line structure 54 and an eleventh capacitor 515 connected to the nineteenth microstrip line structure 513. The second output filter circuit includes a twentieth microstrip line structure 514 connected between the eleventh capacitor 515 and the nineteenth microstrip line structure 513, and a thirteenth capacitor 516 connected to the twentieth microstrip line structure 514. Among them, the twelfth capacitor 512 and the thirteenth capacitor 516 are both filter capacitors, the tenth capacitor 510 and the eleventh capacitor 515 are both bias capacitors, the thirteenth microstrip line structure 59 and the tenth capacitor 510 can be used as the upper half drain bias circuit, the nineteenth microstrip line structure 513 and the eleventh capacitor 515 can be used as the lower half drain bias circuit, the twelfth microstrip line structure 511 and the twelfth capacitor 512 can be used as the upper half drain filter circuit, the twentieth microstrip line structure 514 and the thirteenth capacitor 516 can be used as the lower half drain filter circuit, and the twenty-first microstrip line structure 58, the fourteenth capacitor 57 and the twenty-second microstrip line structure 56 can be used as the output DC blocking circuit. The power supply adopts separate power supply for the upper and lower chips, with a gate voltage of -2.7V and a drain voltage of 50V.

[0031] Meanwhile, the design concept of this invention is as follows: First, the output and output impedance circular distribution of the GaN chip are obtained by using load traction, and a suitable impedance point is selected. Then, the selected GaN chip input fundamental frequency f0 impedance is pre-matched through the power transistor input matching network 2. Looking from the chip end to the left, the power amplifier transistor input matching network 4 keeps the impedance at 2f0 near the open circuit point. Finally, the impedance is matched to 50 ohms through the input external matching network 1. The output end is similar. Then, the matching networks of the input and output ends are brought into the large signal simulation circuit diagram to optimize the power efficiency index. The final fabricated layout and packaged power transistor are assembled, and then debugged and tested.

[0032] Meanwhile, the specific implementation of the high-power RF GaN power amplifier module provided in this embodiment is as follows: First, a negative voltage VGS=-2.7V is applied to the gate of the power module, then a positive voltage VDS=50V is applied to the drain of the power module. Then, the input signal RFin is connected to the output terminal. After external matching, the fundamental frequency is matched to the straight pin. The second harmonic is grounded through the third capacitor 111. After the RFin signal reaches the inside of the tube, the second harmonic is suppressed or attenuated through the power tube input matching network. The fundamental impedance is conjugate with the chip impedance. RFin is amplified by several times through the GaN chip. The amplified signal is distorted. When passing through the output external matching, the output second harmonic signal is grounded through the tenth capacitor 510. At the same time, the fundamental impedance is pulled to 50Ω. Finally, the final module signal is output through RFout.

[0033] In summary, the high-power RF GaN power amplifier module provided by the embodiments of the present invention has the following advantages compared with the prior art: The present invention provides a high-power, high-efficiency GaN RF power amplifier module with an operating frequency of 1.8GHz, a saturated output power of 400W, and a drain efficiency of 74%. The module consists of two parts: a pre-matched power transistor and an external matching circuit board. The pre-matched power transistor internally uses two GaN transistors with a total gate width of 24mm. The HEMT chips are connected in parallel, and the input matching network adopts a dual low-pass filter architecture, which short-circuits the second harmonic signal to ground. On the external matching circuit board, the input and output power supply microstrip line structure adopts a 1 / 4 wavelength line harmonic suppression structure. At the fundamental frequency and higher-order odd harmonic frequencies, the transmission line exhibits open-circuit characteristics, while at even-order harmonic frequencies, the transmission line exhibits short-circuit characteristics. Higher-order odd harmonics will cause the output voltage waveform to approach a square wave shape, increasing the minimum output voltage and helping to eliminate the impact of the double peak of output current introduced by the Knee voltage on output power and efficiency. At the same time, this invention combines the LC resonant structure with the quarter-wavelength line, improving the efficiency of the RF power amplifier. Meanwhile, the input external matching network increases the impedance of the pins and reduces the external matching area of ​​the RF power amplifier. The structure is compact and simple, simplifying the design process of similar power amplifiers. The high efficiency and small size make this invention have important application prospects in industrial heating, medical tumor treatment, and military fields.

[0034] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0035] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A high-power radio frequency GaN power amplifier module, characterized in that, The high-power radio frequency GaN power amplifier module comprises a signal input end, an input external matching circuit, a power tube input matching circuit, a GaN parallel circuit, a power amplifier tube output matching circuit, an output external matching circuit and a signal output end; The input end of the input external matching circuit is connected with the signal input end, and the input external matching circuit is used for performing second harmonic suppression and fundamental open circuit on the signal input by the signal input end and providing a gate voltage for a power tube; The input end of the power tube input matching circuit is connected with the output end of the input external matching circuit, and the power tube input matching circuit is used for realizing basic network matching and performing second harmonic suppression or attenuation; The input end of the GaN parallel circuit is connected with the output end of the power tube input matching circuit, and the GaN parallel circuit is used for converting DC energy into AC energy to realize amplification of an input signal; The input end of the power amplifier tube output matching circuit is connected with the output end of the GaN parallel circuit, and the power amplifier tube output matching circuit is used for preliminarily enlarging the impedance of a GaN tube core; The input end of the output external matching circuit is connected with the output end of the power amplifier tube output matching circuit, the output end of the output external matching circuit is connected with the signal output end, and the output external matching circuit is used for performing second harmonic suppression and fundamental open circuit and providing a drain voltage for a power tube.

2. The high power radio frequency (RF) GaN power amplifier module of claim 1, wherein, The input external matching circuit comprises an input matching node, an input 50Ω line, a first input filter circuit, a second input filter circuit, a first input 1 / 4 wavelength line circuit and a second input 1 / 4 wavelength line circuit, the first input 1 / 4 wavelength line circuit, the second input 1 / 4 wavelength line circuit and the input 50Ω line are connected with the input matching node respectively, the first input filter circuit is connected with the first input 1 / 4 wavelength line circuit, and the second input filter circuit is connected with the second input 1 / 4 wavelength line circuit.

3. The high power radio frequency (RF) GaN power amplifier module of claim 2, wherein, The input 50Ω line comprises a first microstrip line structure, a first capacitor and a second microstrip line structure connected in series, the input matching node comprises a third microstrip line structure, a fourth microstrip line structure, a fifth microstrip line structure, an eighth microstrip line structure and a ninth microstrip line structure connected in series, the second microstrip line structure is connected with the third microstrip line structure, the first input 1 / 4 wavelength line circuit comprises a first resistor connected with the fifth microstrip line structure, a sixth microstrip line structure connected with the first resistor and a third capacitor connected with the sixth microstrip line structure, the first input filter circuit comprises a seventh microstrip line structure connected between the third capacitor and the sixth microstrip line structure, a second capacitor connected with the seventh microstrip line structure, the second input 1 / 4 wavelength line circuit comprises a second resistor connected with the ninth microstrip line structure, a tenth microstrip line structure connected with the second resistor and an eighth capacitor connected with the tenth microstrip line structure, and the second input filter circuit comprises an eleventh microstrip line structure connected between the eighth capacitor and the tenth microstrip line structure, a ninth capacitor connected with the eleventh microstrip line structure.

4. The high power radio frequency (RF) GaN power amplifier module of claim 1, wherein, The power tube input matching circuit comprises a first inductor and a fourth inductor arranged in parallel, a second inductor and a third inductor connected in series on the branch where the first inductor is located, a fourth capacitor and a fifth capacitor arranged between the first inductor and the second inductor and between the second inductor and the third inductor respectively, a fifth inductor and a sixth inductor connected in series on the branch where the fourth inductor is located, and a sixth capacitor and a seventh capacitor arranged between the fourth inductor and the fifth inductor and between the fifth inductor and the sixth inductor respectively.

5. The high power radio frequency (RF) GaN power amplifier module of claim 1, wherein, The GaN parallel circuit comprises a first GaN chip and a second GaN chip arranged in parallel, and the first GaN chip and the second GaN chip are both GaN HEMT chips with a total gate width of 24 mm.

6. The high power radio frequency (RF) GaN power amplifier module of claim 1, wherein, The power amplifier tube output matching circuit comprises a seventh inductor and an eighth inductor arranged in parallel.

7. The high power radio frequency (RF) GaN power amplifier module of claim 1, wherein, The output external matching circuit comprises an output matching section, an output 50Ω line, a first output filter circuit, a second output filter circuit, a first output 1 / 4 wavelength line circuit, and a second output 1 / 4 wavelength line circuit, the first output 1 / 4 wavelength line circuit, the second output 1 / 4 wavelength line circuit, and the output 50Ω line are connected with the output matching section respectively, the first output filter circuit is connected with the first output 1 / 4 wavelength line circuit, and the second output filter circuit is connected with the second output 1 / 4 wavelength line circuit.

8. The high power radio frequency (RF) GaN power amplifier module of claim 7, wherein, The output 50Ω line comprises a twenty-first microstrip line structure, a fourteenth capacitor, and a twenty-second microstrip line structure connected in series, the output matching section comprises a fourteenth microstrip line structure, a fifteenth microstrip line structure, a sixteenth microstrip line structure, a seventeenth microstrip line structure, and an eighteenth microstrip line structure connected in series, the twenty-first microstrip line structure is connected with the sixteenth microstrip line structure, the first output 1 / 4 wavelength line circuit comprises a thirteenth microstrip line structure connected with the fourteenth microstrip line structure and a tenth capacitor connected with the thirteenth microstrip line structure, the first output filter circuit comprises a twelfth microstrip line structure connected between the tenth capacitor and the thirteenth microstrip line structure, and a twelfth capacitor connected with the twelfth microstrip line structure, the second output 1 / 4 wavelength line circuit comprises a nineteenth microstrip line structure connected with the eighteenth microstrip line structure and an eleventh capacitor connected with the nineteenth microstrip line structure, and the second output filter circuit comprises a twentieth microstrip line structure connected between the eleventh capacitor and the nineteenth microstrip line structure, and a thirteenth capacitor connected with the twentieth microstrip line structure.

Images