Perovskite battery module and preparation method thereof
By setting an electron transport layer and a groove structure on the sidewall of the perovskite layer, the stability problem of perovskite solar cells during laser scribing was solved, achieving higher cell stability and durability.
Patent Information
- Application Number
- CN202511832415.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-04
- Publication Date
- 2026-01-13
AI Technical Summary
Perovskite solar cells are susceptible to thermal effects and ion migration during laser etching, resulting in poor stability. Furthermore, the back electrode layer is prone to edge curling, which affects the long-term performance of the cell.
An electron transport layer is set as a protective layer on the sidewall of the perovskite layer. By setting a groove structure on the substrate and depositing a back electrode layer on its sidewall, the thermal impact of laser scribing is reduced and the direct contact between the perovskite and the back electrode is isolated.
It improves the stability of perovskite solar cells, prevents perovskite decomposition and back electrode layer curling, and enhances the long-term lifespan and performance of the cells.
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Figure CN121335348A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of solar cells, and more particularly, to a perovskite battery module and a preparation method thereof. BACKGROUND
[0002] Solar photovoltaic power generation is an effective means to solve the increasingly serious energy and environmental problems. With the development of solar photovoltaic power generation technology, perovskite materials have great application value in solar cells and other optoelectronic devices due to their large light absorption coefficient, high carrier lifetime, high charge mobility, and extremely low defect state density.
[0003] Perovskite solar cells have attracted much attention due to their high theoretical efficiency, low cost, and simple preparation process. Currently, P1, P2, and P3 laser scribing methods are commonly used to realize the series and parallel connection of the cells. However, the perovskite film layer of the current perovskite solar cell is easily damaged due to the heat generated by laser scribing, and the perovskite is easily exposed to air, which accelerates the decomposition of the perovskite. In addition, the negative electrode film is easily deposited into the P2 channel, which causes the negative electrode film to directly contact the perovskite, resulting in the decomposition of the perovskite due to ion migration. Moreover, the negative electrode film layer around the P3 channel is prone to curling during the vaporization of the perovskite film layer. The above problems all lead to poor stability of the perovskite cell.
[0004] Therefore, how to improve the stability of the perovskite cell is a problem to be solved. SUMMARY
[0005] The present application provides a perovskite battery module and a preparation method thereof. An electron transport layer is arranged on the side wall of the perovskite as a protective layer to reduce the heat generated by laser scribing, avoid the direct contact between the back electrode layer and the perovskite layer, and prevent the curling of the back electrode layer, thereby improving the stability of the perovskite cell.
[0006] In a first aspect, a perovskite battery module is provided, which includes a substrate, a plurality of sub-cells covering the substrate, each sub-cell including a first groove and a second groove arranged at intervals along a first direction, and a conductive layer, a hole transport layer, a perovskite layer, an electron transport layer, and a back electrode layer arranged in sequence along a second direction, wherein the conductive layer covers the substrate, the hole transport layer covers the conductive layer and the substrate, the electron transport layer is located on the side wall of the perovskite layer away from the hole transport layer and the perovskite layer, the back electrode layer covers the electron transport layer, and the back electrode layer also covers the side wall and the bottom of the first groove and part of the side wall of the second groove, the first direction is the horizontal direction of the surface of the substrate, and the second direction is the direction perpendicular to the surface of the substrate.
[0007] In the embodiments of the present application, the side wall of the perovskite layer is provided with an electron transport layer, which reduces the thermal influence of P2 laser scribing on the perovskite layer at the position of the first groove. When the back electrode layer is deposited on the electron transport layer, the contact between the back electrode layer and the perovskite layer is prevented by the electron transport layer on the side wall of the perovskite layer, so that the perovskite layer is not decomposed due to ion migration. At the same time, the presence of the electron transport layer on the side wall of the perovskite layer prevents the back electrode layer around the P3 channel from being curled when the perovskite layer is vaporized, thereby improving the stability of the perovskite battery.
[0008] In combination with the first aspect, in some implementations of the first aspect, the distance between the perovskite layers on both sides of the first groove is in the range of [20 , 200 ], and the distance between the perovskite layers on both sides of the second groove is in the range of [20 , 200 ].
[0009] In the embodiments of the present application, the distance between the perovskite layers on both sides of the first groove and the second groove is adjustable in the range of [20 , 200 ], so that the width of the perovskite layer in each sub-cell can be flexibly adjusted.
[0010] In combination with the first aspect, in some implementations of the first aspect, the distance from the side of the first groove away from the second groove to the side of the second groove close to the first groove is greater than or equal to 50 .
[0011] In the embodiments of the present application, the distance between the first groove and the second groove is adjustable, which makes the series resistance between the conductive layer and the back electrode layer less than 10 ohms, and ensures that the thermal influence of P3 laser scribing does not easily affect the back electrode covering the side wall of the first groove, thereby protecting the back electrode covering the side wall of the first groove.
[0012] In combination with the first aspect, in some implementations of the first aspect, the angle between the first groove and the first direction is in the range of [ , ], and the angle between the second groove and the first direction is in the range of [ , ].
[0013] In the embodiments of the present application, the angles of the first groove and the second groove in the first direction are adjustable, which makes the first groove and the second groove present a certain angle, thereby facilitating the deposition of the electron transport layer and the back electrode layer on the side wall of the perovskite layer to protect the perovskite layer from the thermal influence of P2 laser scribing, thereby improving the stability of the perovskite battery.
[0014] In conjunction with the first aspect, in some implementations of the first aspect, the first groove is used for the P2 scribe line and the second groove is used for the P3 scribe line.
[0015] In a second aspect, a method for fabricating a perovskite battery module is provided, for fabricating a perovskite battery module in the first aspect or any implementation thereof. The method includes: providing a substrate; forming a plurality of sub-cells on the substrate, each sub-cell including a first groove and a second groove spaced apart along a first direction, and the sub-cell further including a conductive layer, a hole transport layer, a perovskite layer, an electron transport layer and a back electrode layer sequentially disposed along a second direction, wherein the conductive layer covers the substrate, the hole transport layer covers the conductive layer and the substrate, the electron transport layer is located on the side of the perovskite layer away from the hole transport layer and on the sidewall of the perovskite layer, the back electrode layer covers the electron transport layer, and the back electrode layer also covers the sidewall and bottom of the first groove and part of the sidewall of the second groove, the first direction being the direction of the horizontal plane of the substrate surface, and the second direction being the direction perpendicular to the substrate surface.
[0016] In conjunction with the second aspect, in some implementations of the second aspect, forming multiple sub-cells on a substrate includes: forming a preliminary conductive layer on the substrate; etching the preliminary conductive layer to form multiple conductive layers; forming a preliminary hole transport layer on the multiple conductive layers; distributing multiple masks at intervals on the preliminary hole transport layer, and forming multiple perovskite layers on the preliminary hole transport layer based on the multiple masks; removing the multiple masks to form multiple preliminary first grooves and multiple preliminary second grooves, and forming a preliminary electron transport layer on the multiple perovskite layers, the multiple preliminary first grooves, and the multiple preliminary second grooves; etching the preliminary electron transport layer and the preliminary hole transport layer in the preliminary first grooves to form multiple hole transport layers, multiple electron transport layers, and multiple first grooves; forming a preliminary back electrode layer on the multiple hole transport layers, multiple electron transport layers, multiple first grooves, and multiple preliminary second grooves; and etching the preliminary back electrode layer in the preliminary second grooves to form multiple back electrode layers and multiple second grooves.
[0017] In this embodiment of the application, a mask plate can be set on the hole transport layer before the perovskite layer is prepared, so that the perovskite layer is divided. In this way, when the electron transport layer is prepared, a protective layer is formed on the sidewall of the perovskite layer, which prevents the perovskite layer from being exposed, thereby protecting the perovskite from the thermal effects of P2 laser scribing and reducing the possibility of perovskite decomposition.
[0018] In conjunction with the second aspect, in some implementations of the second aspect, multiple masks are spaced apart on the preparatory hole transport layer, including: spaced apart on the preparatory hole transport layer at angles formed with the first direction at [ , Multiple masks within the range.
[0019] In conjunction with the second aspect, in some implementations of the second aspect, the width of each of the multiple photomasks is within
[20] . 200 Within the range.
[0020] The beneficial effects of the second aspect are the same as those of the first aspect or any implementation thereof, and will not be elaborated upon further.
[0021] Thirdly, an electrical device is provided, comprising a perovskite battery module as described in the first aspect and any of the possible implementations thereof. Attached Figure Description
[0022] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the embodiments of this application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on the drawings without creative effort.
[0023] Figure 1 This is a schematic diagram of a perovskite battery module.
[0024] Figure 2 This is a schematic diagram of a perovskite battery module provided in an embodiment of this application.
[0025] Figure 3 This is a schematic diagram showing the angle formed by a first groove and a second groove in a first direction, according to an embodiment of this application.
[0026] Figure 4 This is a schematic diagram showing the angle at which a first groove and a second groove are formed on a conductive layer, according to an embodiment of this application.
[0027] Figure 5 This is a schematic block diagram illustrating a method for fabricating a perovskite battery module according to an embodiment of this application.
[0028] Figure 6 This is a schematic diagram of a conductive layer formed on a substrate according to an embodiment of this application.
[0029] Figure 7 This is a schematic diagram of a preparatory hole transport layer with multiple masks provided in an embodiment of this application.
[0030] Figure 8 This is a schematic diagram of a preparatory hole transport layer after multiple perovskite layers have been formed on it, as provided in an embodiment of this application.
[0031] Figure 9This is a schematic diagram of a pre-electron transport layer formed on multiple perovskite layers, multiple pre-prepared first grooves, and multiple pre-prepared second grooves, according to an embodiment of this application.
[0032] Figure 10 This is a schematic diagram of a plurality of hole transport layers, a plurality of electron transport layers and a plurality of first grooves provided in an embodiment of this application.
[0033] Figure 11 This is a schematic diagram of a pre-back electrode layer formed on multiple hole transport layers, multiple electron transport layers, multiple first grooves, and multiple pre-second grooves, according to an embodiment of this application. Detailed Implementation
[0034] The technical solutions in this application will now be described with reference to the accompanying drawings.
[0035] This application will present various aspects, embodiments, or features relating to a system comprising multiple devices, components, modules, etc. It should be understood and appreciated that individual systems may include additional devices, components, modules, etc., and / or may not include all the devices, components, modules, etc. discussed in conjunction with the accompanying drawings. Furthermore, combinations of these approaches are also possible.
[0036] Furthermore, in the embodiments of this application, the words "exemplary," "for example," etc., are used to indicate that they are examples, illustrations, or descriptions. Any embodiment or design scheme described as "exemplary" in the embodiments of this application should not be construed as being better or more advantageous than other embodiments or design schemes. Specifically, the use of the term "exemplary" is intended to present the concept in a concrete manner.
[0037] The business scenarios described in the embodiments of this application are for the purpose of more clearly illustrating the technical solutions of the embodiments of this application, and do not constitute a limitation on the technical solutions provided in the embodiments of this application. As those skilled in the art will know, with the evolution of technology and the emergence of new business scenarios, the technical solutions provided in the embodiments of this application are also applicable to similar technical problems.
[0038] References to "one embodiment" or "some embodiments" as described in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.
[0039] In this application embodiment, "at least one" refers to one or more, and "more than one" refers to two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, and B alone, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, or c can represent: a, b, c, ab, ac, bc, or abc, where a, b, and c can be single or multiple.
[0040] The following describes the technical content related to the embodiments of this application.
[0041] Photovoltaic power generation, as the most widely used clean energy technology, will become one of the focuses of future energy development. Monocrystalline silicon-based solar cells have gained attention in the photovoltaic market due to their high efficiency and stability. However, high manufacturing costs, long supply chains, and high energy consumption of upstream enterprises have limited the development speed of silicon-based solar cells. At the same time, the conversion efficiency of silicon-based solar cells is gradually approaching its theoretical limit, which slows down the development of silicon-based solar cell technology. Therefore, developing a new photovoltaic technology with low cost and high theoretical efficiency is crucial.
[0042] Perovskite, as a synthetic material, is a direct bandgap semiconductor with extremely strong light absorption, exhibiting a large absorption coefficient, high carrier lifetime, high charge mobility, and extremely low defect state density. It shows great application value in solar cells and other optoelectronic devices. Due to its advantages such as simple device fabrication methods, inexpensive materials, and insensitivity to contaminants, perovskite is expected to become a revolutionary material in photovoltaics, lasers, and luminescence fields. For example, this field proposes a perovskite solar cell, a novel photovoltaic technology with low cost and high theoretical efficiency. Perovskite solar cells possess good light absorption coefficient and carrier mobility, and the electro-conversion efficiency of small-area cells in the laboratory has exceeded 26.1%, comparable to that of silicon-based cells.
[0043] Currently, perovskite solar cells are often connected in series using laser scribing. The laser scribing process typically includes P1 laser scribing, P2 laser scribing, and P3 laser scribing. P1 laser scribing removes the conductive layer, P2 laser scribing removes the prepared hole transport layer, perovskite layer, and electron transport layer, and P3 laser scribing removes the prepared hole transport layer, perovskite layer, electron transport layer, and cathode, ultimately forming a perovskite solar cell module composed of multiple separate sub-cells connected in series.
[0044] Figure 1 This is a schematic diagram of a perovskite battery module 10. (See diagram below.) Figure 1 As shown, the perovskite solar cell module 10 includes a substrate 110 and multiple sub-cells 120.
[0045] Each sub-cell 120 includes a conductive layer 121, a hole transport layer 122, a perovskite layer 123, an electron transport layer 124, and a back electrode layer 125 arranged sequentially. The conductive layer 121 covers the substrate 110, and the hole transport layer 122 covers the conductive layer 121 and the substrate 110.
[0046] Each sub-cell 120 also includes a P2 channel and a P3 channel, and the back electrode layer 125 can cover the sidewalls and bottom of the P2 channel. The hole transport layer 122 covers a portion of the substrate 110; in other words, the conductive layers 121 are spaced apart, with the hole transport layer 122 covering the portion of the substrate 110 between any two spaced conductive layers 121. The spaced conductive layers 121 are formed by P1 laser etching after depositing the conductive layers 121 on the substrate. The P2 channel refers to the channel formed after P2 laser etching, and the P3 channel refers to the channel formed after P3 laser etching.
[0047] The fabrication process of the perovskite battery module 10 includes the following steps.
[0048] Step S11: A conductive layer is formed on the substrate 110 and P1 laser line etching is performed to form a conductive layer 121.
[0049] In step S12, a hole transport layer, a perovskite layer, and an electron transport layer are sequentially formed on the conductive layer 121, and P2 laser etching is performed on the hole transport layer, the perovskite layer, and the electron transport layer to form a hole transport layer 122, a perovskite layer 123, an electron transport layer 124, and a P2 channel.
[0050] Step S13: A back electrode layer is formed on the electron transport layer 124, and the back electrode layer is etched by P2 laser etching to form the back electrode layer 125.
[0051] However, during the fabrication of the perovskite battery module 10, the P2 laser scribing is performed on the hole transport layer, the perovskite layer, and the electron transport layer. This makes the perovskite layer 123 susceptible to damage due to the thermal effects of the P2 laser scribing, and the perovskite is easily exposed to air, which accelerates its decomposition. Furthermore, since the back electrode layer easily deposits into the P2 channel, it comes into direct contact with the perovskite, causing the perovskite to decompose due to ion migration. Additionally, the vaporization of the perovskite layer 123 can easily cause edge curling of the back electrode layer around the P3 channel. All of these problems lead to a decrease in the stability of the perovskite battery.
[0052] Therefore, improving the stability of perovskite solar cells is an urgent problem to be solved.
[0053] In view of this, this application proposes a perovskite battery module, in which an electron transport layer is provided on the sidewall of the perovskite as a protective layer to reduce the thermal impact of laser scribing, avoid direct contact between the back electrode layer and the perovskite layer, and prevent the back electrode layer from curling, thereby improving the stability of the perovskite battery.
[0054] Figure 2 This is a schematic diagram of a perovskite battery module 20 provided in this application.
[0055] refer to Figure 2 As shown, the perovskite solar cell module 20 includes a substrate 210 and multiple sub-cells 220.
[0056] In some implementations, multiple sub-cells 220 cover the substrate. Each sub-cell 220 includes a first groove 221 and a second groove 222 spaced apart along a first direction X. The sub-cell 220 also includes a conductive layer 223, a hole transport layer 224, a perovskite layer 225, an electron transport layer 226, and a back electrode layer 227 sequentially arranged along a second direction Y. The conductive layer 223 covers the substrate 210, the hole transport layer 224 covers the conductive layer 223 and the substrate 210, the electron transport layer 226 is located on the side of the perovskite layer 225 away from the hole transport layer 224 and on the sidewall of the perovskite layer 225, the back electrode layer 227 covers the electron transport layer 226, and the back electrode layer 227 also covers the sidewall and bottom 2211 of the first groove 221 and part of the sidewall of the second groove 222. The first direction X is the direction of the horizontal plane of the substrate 210 surface, and the second direction Y is the direction perpendicular to the substrate 210 surface.
[0057] In some embodiments, the substrate 210 includes, but is not limited to, any one of glass, silicon wafer, carbon fiber, marble, polyimide (PI), and polyethylene terephthalate (PET).
[0058] In some embodiments, the conductive layer 223 is made of at least one of transparent conductive materials, metallic conductive materials, and highly conductive materials. Transparent conductive materials include, but are not limited to, at least one of indium tin oxide, fluorine-doped tin oxide, aluminum-doped zinc oxide, and indium zinc oxide. Metallic conductive materials include, but are not limited to, at least one of gold (Au), silver (Ag), copper (Cu), nickel (Ni), titanium (Ti), and chromium (Cr). Highly conductive materials include, but are not limited to, at least one of graphene, silver nanowires, and carbon nanotubes. For example, indium tin oxide (ITO) conductive glass, fluorine-doped tin oxide (FTO) conductive glass, aluminum-doped zinc oxide (AZO) conductive glass, silver nanowire-modified conductive glass, graphene-modified conductive glass, and carbon nanotube-modified conductive glass are commonly used as the transparent substrate and transparent electrode (conductive layer 223).
[0059] It should be noted that this application does not limit the material of the hole transport layer 224, and may include, but is not limited to, at least one of nickel oxide (NiOx), vanadium pentoxide (V2O5), cuprous iodide (CuI), molybdenum trioxide (MoO3), copper oxide (CuO) and cuprous oxide (Cu2O).
[0060] In some embodiments, the back electrode layer 227 is made of metal. Specifically, the material of the back electrode layer 227 includes, but is not limited to, any one of Au, Ag and Cu.
[0061] For example, the hole transport layer 224 covers the conductive layer 223 and the substrate 210, or it can be described as the hole transport layer 224 covering a portion of the conductive layer 223 and a portion of the substrate 210.
[0062] In some implementations, a portion of the perovskite layer 225 may extend into the hole transport layer 224. For example, after forming the P1 channel by laser etching of P1, the hole transport layer 224 and the perovskite layer 225 are deposited on the conductive layer 223, and the perovskite layer 225 is deposited into the P1 channel.
[0063] Exemplarily, the electron transport layer 226 is located on the side of the perovskite layer 225 away from the hole transport layer 224 and on the sidewall of the perovskite layer 225. Alternatively, the electron transport layer 226 can be described as covering the side of the perovskite layer 225 away from the hole transport layer 224 and being disposed on the sidewall of the perovskite layer 225. The electron transport layer 226 being disposed on the sidewall of the perovskite layer 225 can be understood as being disposed around the two sidewalls of the perovskite layer 225 perpendicular to the first direction X.
[0064] Exemplarily, the back electrode layer 227 also covers the sidewalls and bottom 2211 of the first groove 221. Alternatively, it can be described as having the back electrode layer 227 disposed around the sidewalls of the first groove 221 and at the bottom of the first groove 221. The back electrode layer 227 also covers a portion of the sidewalls of the second groove 222. Alternatively, it can be described as having the back electrode layer 227 disposed around a portion of the sidewalls of the second groove 222.
[0065] In this design, the bottom 2211 of the first groove 221 contacts the side of the conductive layer 223 away from the substrate 210. The bottom 2221 of the second groove 222 also contacts the side of the conductive layer 223 away from the substrate 210.
[0066] In some implementations, the distance between the perovskite layers 225 located on both sides of the first groove 221 is
[20] . 200 Within the range, the distance between the perovskite layers 225 located on both sides of the second groove 222 is within
[20] . 200 Within the range.
[0067] like Figure 2 As shown, the distance between the perovskite layers 225 located on both sides of the first groove 221 is denoted by d1. Then d is in [20 200 Within the range of ] . The distance between the perovskite layers 225 located on both sides of the second groove 222 is denoted by d2, then d2 is within [20 200 Within the range.
[0068] In some implementations, the distance from the side of the first groove 221 away from the second groove 222 to the side of the second groove 222 closer to the first groove 221 is greater than or equal to 50. .like Figure 2 As shown, the distance d3 from the side 2212 of the first groove 221 away from the second groove 222 to the side 2222 of the second groove 222 near the first groove 221 is greater than or equal to 50. .
[0069] In some implementations, the angle formed by the first groove 221 and the first direction X is in [ , Within the range, the angle formed by the second groove 222 and the first direction X is within [ , Within the range. That is to say, the first groove 221 and the second groove 222 can be configured as a sloping structure.
[0070] In one example, the first groove 221 and the second groove 222 are arranged opposite to each other.Figure 3 As shown, the first groove 221 forms an angle A with the first direction X, and the second groove 222 forms an angle B with the first direction X.
[0071] In one example, the first groove 221 and the second groove 222 are arranged in parallel. Alternatively, the angle formed by the first groove 221 with respect to the first direction X is equal to the angle formed by the second groove 222 with respect to the first direction X. Or, both the angle formed by the first groove 221 and the first direction X are obtuse angles. For example, the angle between the first groove 221 and the first direction X is... Therefore, the angle between the second groove and the first direction X is... .
[0072] In some implementations, the angle formed by the first groove 221 and the conductive layer 223 is [ , Within the range of ], the angle formed by the second groove 222 and the conductive layer 223 is within [ , Within the range.
[0073] In one example, the first groove 221 and the second groove 222 are arranged opposite to each other. Figure 4 As shown, the angle C formed by the first groove 221 and the conductive layer 223 is an obtuse angle, and the angle D formed by the second groove 222 and the conductive layer 223 is an acute angle. For example, the angle C between the first groove 221 and the substrate 210 is... Therefore, the angle D between the second groove and the substrate 210 is... .
[0074] For example, the sum of the angle formed by the first groove 221 and the conductive layer 223 and the angle formed by the second groove 222 and the conductive layer 223 is: .
[0075] In some implementations, the first groove 221 is used for P2 scribe lines, and the second groove 222 is used for P3 scribe lines. Alternatively, the first groove is the P2 channel formed after P2 scribe lines, and the second groove is the P3 channel formed after P3 scribe lines.
[0076] Figure 2The perovskite layer 225 of the perovskite battery module 20 has an electron transport layer 226 on its sidewall. This reduces the thermal impact of P2 laser etching on the perovskite layer when P2 laser etching is performed at the location of the first groove 221. Furthermore, when the back electrode layer 227 is deposited on the electron transport layer 226, the electron transport layer 226 on the sidewall of the perovskite layer 225 isolates the contact between the back electrode layer 227 and the perovskite layer 225, preventing the perovskite from decomposing due to ion migration. Simultaneously, the presence of the electron transport layer on the sidewall of the perovskite layer 225 reduces the likelihood of edge curling of the back electrode layer 227 around the P3 channel during perovskite layer 225 vaporization, thereby improving the stability of the perovskite battery.
[0077] Some embodiments of the present invention also provide a method for preparing the above-described perovskite battery module 20.
[0078] Figure 5 This is a schematic block diagram of a method 500 for fabricating a perovskite battery module 20 according to an embodiment of this application. Figure 5 As shown, the preparation method 500 specifically includes the following steps.
[0079] S510 provides substrate 210.
[0080] S520, a plurality of sub-cells 220 are formed on the substrate. Each sub-cell 220 includes a first groove 221 and a second groove 222 spaced apart along a first direction X. The sub-cell 220 also includes a conductive layer 223, a hole transport layer 224, a perovskite layer 225, an electron transport layer 226 and a back electrode layer 227 sequentially disposed along a second direction Y. The conductive layer 223 covers the substrate 210, the hole transport layer 224 covers the conductive layer 223 and the substrate 210, the electron transport layer 226 is located on the side of the perovskite layer 225 away from the hole transport layer 224 and on the sidewall of the perovskite layer 225, the back electrode layer 227 covers the electron transport layer 226, the back electrode layer 227 also covers the sidewall and bottom 2211 of the first groove 221, and part of the sidewall of the second groove 222, the first direction X is the direction of the horizontal plane of the substrate 210, and the second direction Y is the direction perpendicular to the surface of the substrate 210.
[0081] Exemplary embodiments of step S520 will now be described in more detail with reference to the accompanying drawings. However, these exemplary embodiments may be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein. It should be understood that these embodiments are provided so that the disclosure of this application is thorough and complete, and that the concept of these exemplary embodiments is fully conveyed to those skilled in the art.
[0082] After providing the substrate 210, forming a plurality of sub-cells on the substrate 210 includes the following steps.
[0083] Step S1: A preconductive layer is formed on the substrate 210.
[0084] Step S2: Etch the prepared conductive layer to form multiple conductive layers 223.
[0085] As an example, such as Figure 6 As shown, after performing steps S1 and S2, a plurality of conductive layers 223 are formed on the substrate 210. The etching process of the pre-conductive layers can be performed by using a P1 laser to etch lines into the pre-conductive layers, thereby dividing the pre-conductive layers into a plurality of spaced conductive layers 223.
[0086] Step S3: A preliminary hole transport layer is formed on the multiple conductive layers 223.
[0087] Step S4: Multiple mask plates are spaced apart on the prepared hole transport layer, and multiple perovskite layers 225 are formed on the prepared hole transport layer based on the multiple mask plates.
[0088] In some implementations, multiple masks are spaced apart on the pre-hole transport layer, including: spaced apart on the pre-hole transport layer at angles formed with the first direction X. , Multiple masks within the range.
[0089] As an example, such as Figure 7 As shown, multiple mask plates are set on the formed preparatory hole transport layer.
[0090] As an example, such as Figure 8 As shown, after performing steps S3 and S4, multiple perovskite layers 225 are formed on the pre-hole transport layer. Specifically, a perovskite film is deposited on the pre-hole transport layer. Since multiple masks are provided on the pre-hole transport layer, perovskite films will not be deposited where masks are present, thus forming multiple perovskite layers 225 on the pre-hole transport layer.
[0091] In some implementations, the width of each of the multiple photomasks is within
[20] . 200 Within the range.
[0092] Step S5: Remove multiple photomasks to form multiple pre-prepared first grooves and multiple pre-prepared second grooves, and form a pre-prepared electron transport layer on multiple perovskite layers, multiple pre-prepared first grooves and multiple pre-prepared second grooves.
[0093] Among them, the groove width of multiple pre-prepared first grooves is in
[20] 200 Within the range of
[20] , the width of multiple prepared second grooves is within
[20] . 200 Within the range.
[0094] As an example, such as Figure 9 As shown, a preliminary electron transport layer is formed on multiple perovskite layers 225, multiple pre-prepared first grooves, and multiple pre-prepared second grooves. Specifically, an electron transport film is deposited on the multiple perovskite layers 225, the multiple pre-prepared first grooves, and the multiple pre-prepared second grooves to form the preliminary electron transport layer. Alternatively, an electron transport film is deposited on the multiple perovskite layers 225, and the electron transport film extends into the multiple pre-prepared first grooves and the multiple pre-prepared second grooves, thereby forming the preliminary electron transport layer.
[0095] Step S6: In preparing the first groove, the prepared electron transport layer and the prepared hole transport layer are etched to form multiple hole transport layers 224, multiple electron transport layers 226 and multiple first grooves 221.
[0096] As an example, such as Figure 10 As shown, after P2 laser scribing is performed on the pre-electron transport layer and the pre-hole transport layer located directly below the bottom of the pre-first grooves in the multiple pre-first grooves, the perovskite layer 225 located directly below the bottom of the multiple pre-first grooves is exposed, thereby forming multiple hole transport layers 224, multiple electron transport layers 226 and multiple first grooves 221.
[0097] Step S7: A preparatory back electrode layer is formed on multiple hole transport layers 224, multiple electron transport layers 226, multiple first grooves 221, and multiple preparatory second grooves.
[0098] As an example, such as Figure 11 As shown, a pre-deposited back electrode layer is deposited on multiple hole transport layers 224, multiple electron transport layers 226, multiple first grooves 221, and multiple pre-deposited second grooves. Alternatively, a pre-deposited back electrode layer is deposited on multiple hole transport layers 224 and multiple electron transport layers 226, and the pre-deposited back electrode layer extends into the first grooves 221 and the pre-deposited second grooves.
[0099] In step S8, the back electrode layer is etched to form multiple back electrode layers 227 and multiple second grooves 222 in the preparation of the second groove.
[0100] As an example, such as Figure 2As shown, in a plurality of pre-prepared first grooves, a pre-prepared electron transport layer and a pre-prepared hole transport layer located directly below the bottom of the plurality of pre-prepared first grooves are etched with a P3 laser to expose the perovskite layer 225 located directly below the bottom of the plurality of pre-prepared second grooves, thereby forming a plurality of back electrode layers 227 and a plurality of second grooves 222.
[0101] At this point, the perovskite battery module 20 has been successfully fabricated.
[0102] This application also provides an electrical device, including the perovskite battery module 20 described above.
[0103] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.
[0104] Those skilled in the art will understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.
[0105] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between apparatuses or units may be electrical, mechanical, or other forms.
[0106] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.
[0107] In addition, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.
[0108] If the aforementioned functions are implemented as software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.
[0109] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.
Claims
1. A perovskite battery module, characterized in that, The perovskite battery module includes: Substrate; The substrate includes multiple sub-cells covering the substrate. Each sub-cell includes a first groove and a second groove spaced apart along a first direction. The sub-cell also includes a conductive layer, a hole transport layer, a perovskite layer, an electron transport layer, and a back electrode layer sequentially disposed along a second direction. The conductive layer covers the substrate, the hole transport layer covers the conductive layer and the substrate, the electron transport layer is located on the side of the perovskite layer away from the hole transport layer and on the sidewall of the perovskite layer, the back electrode layer covers the electron transport layer, the back electrode layer also covers the sidewall and bottom of the first groove, and part of the sidewall of the second groove, the first direction is the direction of the horizontal plane of the substrate surface, and the second direction is the direction perpendicular to the substrate surface.
2. The perovskite battery module according to claim 1, characterized in that, The distance between the perovskite layers located on both sides of the first groove is [20] 200 Within the range of [20], the distance between the perovskite layers located on both sides of the second groove is within [20]. 200 Within the range.
3. The perovskite battery module according to claim 1 or 2, characterized in that, The distance from the side of the first groove away from the second groove to the side of the second groove near the first groove is greater than or equal to 50. .
4. The perovskite battery module according to any one of claims 1-3, characterized in that, The angle formed by the first groove and the first direction is in [ , Within the range of ], the angle formed by the second groove and the first direction is within [ , Within the range.
5. The perovskite battery module according to any one of claims 1-4, characterized in that, The first groove is used for the P2 scribe line, and the second groove is used for the P3 scribe line.
6. A method for preparing a perovskite battery module, characterized in that, The method for preparing a perovskite battery module as described in any one of claims 1 to 5 comprises: Provide substrate; Multiple sub-cells are formed on the substrate. Each sub-cell includes a first groove and a second groove spaced apart along a first direction. The sub-cell also includes a conductive layer, a hole transport layer, a perovskite layer, an electron transport layer, and a back electrode layer sequentially arranged along a second direction. The conductive layer covers the substrate, the hole transport layer covers the conductive layer and the substrate, the electron transport layer is located on the side of the perovskite layer away from the hole transport layer and on the sidewall of the perovskite layer, the back electrode layer covers the electron transport layer, the back electrode layer also covers the sidewall and bottom of the first groove, and part of the sidewall of the second groove, the first direction is the direction of the horizontal plane of the substrate surface, and the second direction is the direction perpendicular to the substrate surface.
7. The preparation method according to claim 6, characterized in that, The formation of multiple sub-cells on the substrate includes: A pre-conductive layer is formed on the substrate; The prepared conductive layer is etched to form multiple conductive layers; A preliminary hole transport layer is formed on the plurality of conductive layers; Multiple photomasks are spaced apart on the preparatory hole transport layer, and multiple perovskite layers are formed on the preparatory hole transport layer based on the multiple photomasks; Remove the plurality of masks to form a plurality of pre-prepared first grooves and a plurality of pre-prepared second grooves, and form a pre-prepared electron transport layer on the plurality of perovskite layers, the plurality of pre-prepared first grooves and the plurality of pre-prepared second grooves; In the preparation of the first groove, the preparation electron transport layer and the preparation hole transport layer are etched to form a plurality of hole transport layers, a plurality of electron transport layers and a plurality of the first groove; A pre-back electrode layer is formed on the plurality of hole transport layers, the plurality of electron transport layers, the plurality of first grooves, and the plurality of pre-second grooves; In the preparation of the second groove, the preparation back electrode layer is etched to form a plurality of back electrode layers and a plurality of second grooves.
8. The preparation method according to claim 7, characterized in that, The method of arranging multiple mask plates at intervals on the pre-emptive hole transport layer includes: On the pre-emptive hole transport layer, angles formed with the first direction are spaced at intervals within [...]. , The plurality of mask plates within the range.
9. The preparation method according to claim 7 or 8, characterized in that, The width of each of the plurality of masks is in the range [20]. 200 Within the range.
10. An electrical appliance, characterized in that, The electrical equipment includes a perovskite battery module as described in any one of claims 1-5.