Substrate processing apparatus

Abstract

The invention provides a substrate processing apparatus capable of preventing overheating of constituent members. A substrate processing apparatus (1) according to an embodiment includes: a rotation holding unit (10) that holds and rotates a substrate (W); a processing liquid supply unit (20) that supplies a processing liquid (Lp) to the substrate (W) that is held and rotated by the rotation holding unit (10); a heating unit (50) having a heating source (51) for contactlessly heating the substrate (W) or the processing liquid (Lp) in contact with the substrate (W); a temperature measurement unit (T) that is disposed at a position facing the rotary holding unit (10) and that measures, in a non-contact manner, the temperature of the object (B) to be heated that is heated by the heating unit (50); and a stop control unit (93) that stops the supply of power to the heating unit (50) when it is determined that the temperature measured by the temperature measurement unit (T) exceeds the preset set temperature.

Description

TECHNICAL FIELD

[0001] The present application relates to a substrate processing apparatus. BACKGROUND

[0002] A single-wafer substrate processing apparatus is known, which rotates a substrate such as a semiconductor wafer while supplying a processing liquid to the substrate to perform etching processing or resist removal processing. In such a substrate processing apparatus, a substrate under processing or a processing liquid on the substrate is heated by a heating device, thereby increasing the temperature of the processing liquid to improve processing efficiency.

[0003] [Related Art Literature]

[0004] [Patent Literature]

[0005] [Patent Literature 1] Japanese Patent Laid-Open No. 2015-211201 SUMMARY

[0006] [Problems to be Solved by the Invention]

[0007] In such a heating device, it is necessary to heat the substrate or the processing liquid on the substrate non-contactly so as not to degrade the cleanliness of the substrate due to contact with the heating source. For example, by using a light emitting element such as a light emitting diode (LED) that irradiates light for heating the substrate as a heating source of the heating device, non-contact heating can be performed.

[0008] However, if the substrate or the processing liquid is heated by a heating source that heats non-contactly, constituent members that constitute the substrate processing apparatus are also heated. For example, in a constituent member that rotates the substrate, a holding member such as a chuck pin that holds the substrate is also heated. Such a heated constituent member is sometimes overheated due to a long heating time, a high heating temperature, a malfunction of the heating source, or the like. Thus, there is a possibility that a failure occurs due to deformation or the like of the overheated constituent member.

[0009] An embodiment of the present application is proposed in order to solve the problems described above, and aims to provide a substrate processing apparatus that can prevent overheating of a constituent member.

[0010] [Technical Means to Solve the Problems]

[0011] The substrate processing apparatus according to an embodiment of the present invention includes: a rotation holding section for holding and rotating a substrate; a processing liquid supply section for supplying processing liquid to the substrate held and rotated by the rotation holding section; a heating section having a heating source for heating the substrate or the processing liquid in contact with the substrate without contact; a temperature measuring section disposed opposite to the rotation holding section for non-contactly measuring the temperature of the object being heated by the heating section; and a stop control section for stopping the power supply to the heating section when it is determined that the temperature measured by the temperature measuring section exceeds a preset set temperature.

[0012] [The effects of the invention]

[0013] Through the embodiments of the present invention, a substrate processing apparatus capable of preventing overheating of constituent components can be provided. Attached Figure Description

[0014] Figure 1 This is a partial cross-sectional view along the axial direction of the substrate processing apparatus in the embodiment during the supply of processing liquid.

[0015] Figure 2 It means Figure 1 A partial axial cross-sectional view of the substrate processing apparatus during the supply of rinsing fluid.

[0016] Figure 3 It means Figure 1 A partial axial cross-sectional view of a substrate being moved in and out of a substrate processing apparatus.

[0017] Figure 4 This is a bottom view showing the heating element and the thermometer used for the components.

[0018] Figure 5 This is a block diagram of the control device.

[0019] Figure 6 This is a flowchart illustrating the substrate processing procedure of the implementation method.

[0020] Figure 7 This is a flowchart illustrating the temperature monitoring process in the implementation method.

[0021] Figure 8 This is a bottom view showing a modified example of the arrangement of the heating element and the thermometer for the component.

[0022] Figure 9 This is a partial cross-sectional view of a substrate processing apparatus showing a modified example of the configuration of a thermometer for a component.

[0023] Explanation of icon numbers

[0024] 1: Substrate processing device

[0025] 10: rotation holding portion

[0026] 11: rotation platform

[0027] 11a: facing surface

[0028] 12: holding member

[0029] 13: drive portion

[0030] 20: processing liquid supply portion

[0031] 21: processing liquid nozzle

[0032] 21a, 31a: ejection port

[0033] 22: processing liquid supply tube

[0034] 23: heater

[0035] 24, 33: valve

[0036] 25: processing liquid supply source

[0037] 30: rinse liquid supply portion

[0038] 31: rinse liquid nozzle

[0039] 32: rinse liquid supply tube

[0040] 34: rinse liquid supply source

[0041] 40: liquid receiving portion

[0042] 41: cup portion

[0043] 42: receiving portion

[0044] 50: heating portion

[0045] 51, 51A, 51B, 51C, 51D: heating source

[0046] 52: support portion

[0047] 53: cover

[0048] 53a, 53b, 53c, 53d, 521a, 521b, 521c, 521d: through hole

[0049] 60: lifting mechanism

[0050] 61: arm

[0051] 62: support

[0052] 70: member thermometer

[0053] 70a, 80a: light receiving portion

[0054] 80, 80A, 80B, 80C, 80D: temperature gauge for processing liquid

[0055] 90: control device

[0056] 91: mechanism control section

[0057] 92: temperature control section

[0058] 93: stop control section

[0059] 94: notification section

[0060] 95: storage section

[0061] 96: input section

[0062] 97: output section

[0063] 521: top plate

[0064] B: object to be heated

[0065] C: center

[0066] H: hand

[0067] Lc: rinse liquid

[0068] Lp: processing liquid

[0069] M: constituent member

[0070] P1: carry-out / carry-in position

[0071] P2: heating position

[0072] P3: rinsing position

[0073] R, R1, R2, R3, R4: region

[0074] S101, S102, S103, S104, S105, S106, S107, S108, S109, S110, S111, S112, S113, S114, S115, S116, S117, S118, S119, S120, S121, S122, S123, S124, S201, S202, S203, S204, S205, S206, S207: step

[0075] T: temperature measurement section

[0076] W: substrate DETAILED DESCRIPTION

[0077] Hereinafter, an embodiment of the present application will be described with reference to the accompanying drawings.

[0078] [summary]

[0079] like Figure 1 As shown, the substrate processing apparatus 1 processes the substrate W by rotating the substrate W held by the rotation holding unit 10 and supplying processing liquid Lp to the substrate W from the processing liquid supply unit 20. The substrate processing apparatus 1 of this embodiment is a monolithic device that supplies the substrate W with an etching-capable processing liquid Lp for etching processing. During the etching process, the substrate W is heated by the heating unit 50, and the processing liquid Lp supplied to the substrate W is maintained at a high temperature to improve processing efficiency.

[0080] Furthermore, the temperature measuring unit T, positioned opposite the rotating holding unit 10, non-contactly measures the temperature of the heated object B, which is heated by the heating unit 50. The heated object B includes the substrate W and the processing liquid Lp. The heated object B also includes an object that is heated together with the substrate W and the processing liquid Lp. In this embodiment, the constituent member M constituting the rotating holding unit 10 is included in the heated object B. For example, the opposing surface 11a of the rotating platform 11 constituting the rotating holding unit 10 and the holding member 12 that holds the substrate W are both constituent member M and the heated object B. Furthermore, the control device 90 of the substrate processing apparatus 1 prevents the constituent member M from overheating by monitoring the temperature measured by the temperature measuring unit T.

[0081] The substrate W processed in this embodiment is, for example, a disc-shaped silicon wafer (hereinafter referred to as a Si substrate) with a silicon nitride film and a silicon oxide film formed on its surface. The processing solution Lp is, for example, an aqueous solution containing phosphoric acid (hereinafter referred to as a phosphoric acid solution). The concentration of phosphoric acid in the processing solution Lp is, for example, 85 wt% to 94 wt%. The rinsing solution Lc is, for example, pure water (H2O).

[0082] [structure]

[0083] like Figure 1 As shown, the substrate processing apparatus 1 of this embodiment includes a rotating holding part 10, a processing liquid supply part 20, a rinsing liquid supply part 30, a liquid receiving part 40, a heating part 50, a lifting mechanism 60, a component thermometer 70 (temperature measuring part T), a processing liquid thermometer 80, and a control device 90.

[0084] (Rotational retaining part)

[0085] The rotation holding part 10 holds the substrate W and rotates it. The rotation holding part 10 has a rotation platform 11, a holding member 12 and a driving part 13. The rotation platform 11 is a cylindrical member, one end of which is closed by an opposing surface 11a. The opposing surface 11a is a circular surface with a diameter larger than that of the substrate W, and is spaced apart and faces the substrate W, which is the object to be processed.

[0086] The holding member 12 is a member that holds the substrate W at the facing surface 11a of the rotary platform 11 at a spaced interval. The holding member 12 of the present embodiment is a chuck pin that is provided at a plurality of positions at equal intervals along a position corresponding to the outer periphery of the substrate W, protruding from the rotary platform 11. Further, the holding member 12 is movably provided between a closed position at which the holding member 12 contacts the outer periphery of the substrate W to hold the substrate W and an open position at which the holding member 12 is away from the outer periphery of the substrate W to release the substrate W, by an opening and closing mechanism not shown. Note that the holding member 12 can be of any form as long as it can hold the substrate W. For example, it can be a hook-shaped member that rotates in a direction to contact and separate from the substrate W.

[0087] The drive section 13 is a drive source (motor) that rotates the rotary platform 11. The drive section 13 rotates the substrate W held by the holding member 12 by rotating the rotary platform 11.

[0088] (Treatment liquid supply section)

[0089] The treatment liquid supply section 20 supplies the substrate W held and rotated by the rotary holding section 10 with a treatment liquid Lp. The treatment liquid supply section 20 has a treatment liquid nozzle 21, a treatment liquid supply pipe 22, a heater 23, and a valve 24. The treatment liquid nozzle 21 penetrates a support section 52 and a cover 53 of a heating section 50 described later, and a spout 21a at the tip end is provided so as to face the vicinity of the center of the substrate W held by the rotary holding section 10.

[0090] The treatment liquid nozzle 21 is connected to a treatment liquid supply source 25 such as a tank that stores the treatment liquid Lp, via the treatment liquid supply pipe 22. In the present embodiment, the treatment liquid Lp delivered from the treatment liquid supply source 25 is heated in advance. The heater 23 is provided at a middle of the treatment liquid supply pipe 22. The treatment liquid Lp delivered from the treatment liquid supply source 25 is heated by the heater 23 after passing through the treatment liquid supply pipe 22, and is ejected from the spout 21a of the treatment liquid nozzle 21 to the vicinity of the center of the substrate W.

[0091] The temperature of the treatment liquid Lp ejected from the treatment liquid nozzle 21 is, for example, 160°C. Further, the valve 24 is provided at a middle of the treatment liquid supply pipe 22. By opening and closing the valve 24, the start and stop of the ejection of the treatment liquid Lp from the treatment liquid nozzle 21 is performed. The valve 24 is electrically connected to a control device 90 described later, and the opening and closing is controlled by the control device 90.

[0092] (Rinse liquid supply section)

[0093] As Figure 2As shown, the rinsing fluid supply unit 30 supplies rinsing fluid Lc to the substrate W held by the rotating holding unit 10. For example, pure water can be used as the rinsing fluid Lc. The rinsing fluid supply unit 30 includes a rinsing fluid nozzle 31, a rinsing fluid supply pipe 32, and a valve 33. The rinsing fluid nozzle 31 is inserted through the support portion 52 and the cover 53 of the heating unit 50 (described later), and its front outlet 31a is positioned facing the vicinity of the center of the substrate W held by the rotating holding unit 10.

[0094] The rinsing fluid nozzle 31 is connected to a rinsing fluid supply source 34, such as a storage tank containing rinsing fluid Lc, via a rinsing fluid supply pipe 32. The rinsing fluid Lc supplied from the rinsing fluid supply source 34 is ejected from the nozzle outlet 31a of the rinsing fluid nozzle 31 through the rinsing fluid supply pipe 32 to the vicinity of the center of the substrate W. A valve 33 is provided midway through the rinsing fluid supply pipe 32. The ejection of rinsing fluid Lc from the rinsing fluid nozzle 31 is initiated and stopped by opening and closing the valve 33. The valve 33 is electrically connected to a control device 90 (described later) and its opening and closing are controlled by the control device 90.

[0095] (wetted part)

[0096] The liquid receiving section 40 is provided in a manner that surrounds the rotating holding section 10, and receives the processing liquid Lp and rinsing liquid Lc that are splashed from the rotating substrate W. The liquid receiving section 40 discharges the received processing liquid Lp and rinsing liquid Lc outside the substrate processing apparatus 1.

[0097] The liquid receiving part 40 has a cup part 41 and a receiving part 42. The cup part 41 is a curved cylindrical body that covers the periphery of the rotating holding part 10 at intervals and narrows in diameter at the upper part. The cup part 41 is raised in the standby position (see reference) by a lifting mechanism (not shown). Figure 3 ) and processing location (refer to Figure 1 , Figure 2 The receiving part 42 is a ring-shaped container located below the cup part 41 and open at the top.

[0098] The processing liquid Lp and rinsing liquid Lc that splash from the substrate W are caught by the cup portion 41 and fall downward along the inner wall of the cup portion 41, thus flowing into the receiving portion 42. The processing liquid Lp and rinsing liquid Lc that flow into the receiving portion 42 are discharged from the substrate processing apparatus 1 through a discharge port (not shown) formed on the bottom surface of the receiving portion 42.

[0099] (Heating section)

[0100] The heating unit 50 includes a heating source 51 that heats the substrate W non-contactly. The heating source 51 is powered by electricity to heat the substrate W. The heating source 51 is, for example, a light-emitting element that emits light for heating. The substrate W, held and rotated by the rotating holding unit 10, is heated by the light irradiated by the heating source 51. The processing liquid Lp supplied to the vicinity of the center of the substrate W flows outward toward the outer edge of the substrate W by centrifugal force. At this time, if there is no further heating, the supplied high-temperature (160°C) processing liquid Lp will decrease in temperature as it flows on the substrate W due to heat conduction or dissipation toward the substrate W. Therefore, by heating the substrate W, the processing liquid Lp on the substrate W can be heated by heat conduction from the substrate W, thereby maintaining the processing liquid Lp on the substrate W at a high temperature. In addition, the output of the heating unit 50 can be controlled so that not only the temperature of the processing liquid Lp is maintained, but the temperature of the processing liquid Lp on the substrate W is further increased.

[0101] The light-emitting element, used as the heating source 51, emits light (electromagnetic waves) of a wavelength that is absorbed by the substrate W and thus heats the substrate W. Furthermore, the light emitted by the heating source 51 is light of a wavelength that is transmitted through the processing liquid Lp. Here, "absorbed by the substrate W" means that the light incident on the substrate W is absorbed to a degree sufficient to heat the substrate W; this includes not only the case of complete absorption by the substrate W, but also the case where a portion of the light is reflected or transmitted through the substrate W. "Transmitted through the processing liquid Lp" means that the light incident on the processing liquid Lp is transmitted through the processing liquid Lp to a degree sufficient to heat the substrate W, and also includes the case where a portion of the light is absorbed or reflected by the processing liquid Lp.

[0102] As a light-emitting element, an LED that emits light for heating is used, for example. The wavelength of the light emitted by the LED is, for example, 350 nm to 1060 nm (350 nm or more and 1060 nm or less). More preferably, the center wavelength is 395 nm to 940 nm (395 nm or more and 940 nm or less). In this embodiment, an LED with a center wavelength of 395 nm is used.

[0103] Therefore, even when light from the heating source 51 is shone from above the space above the substrate W, i.e., from above the processing liquid Lp supplied to the substrate W, it can pass through the processing liquid Lp on the substrate W and be absorbed by the substrate W, thereby heating the substrate W. Furthermore, through heat conduction from the substrate W, the temperature of the processing liquid Lp rises, thereby increasing the etching rate (processing rate). In addition, the start and stop of heating by the heating source 51, and the output of the heating source 51, are controlled by the control device 90 described later. Moreover, the start and stop of the power supply to the heating source 51 corresponding to the temperature measured by the temperature measuring unit T are also controlled by the control device 90 described later.

[0104] In addition to the heating source 51, the heating unit 50 also includes a support 52 and a cover 53. The support 52 is a member that supports the multiple heating sources 51. The support 52 is a cylindrical member whose upper end is closed by a top plate 521. The diameter of the support 52 is the same as or larger than the diameter of the substrate W. The support 52 is disposed above the rotating platform 11 at a spaced interval and facing the opposing surface 11a. Thus, the heating unit 50 is configured to irradiate light from the heating sources 51 from above, above the space where the substrate W is held by the rotating holding part 10. Furthermore, two through holes 521a and 521b are provided near the center of the top plate 521 of the support 52.

[0105] like Figure 4 As shown, the cover 53 is a circular plate-shaped member that covers the end of the support 52 facing the rotating platform 11. The cover 53 is formed of a material that is resistant to the processing liquid Lp and transmits light emitted from the heating source 51. For example, a quartz cover 53 is used. Furthermore, two through holes 53a and 53b are formed near the center C of the cover 53. Additionally, Figure 4 In the middle, the solid line represents the heating source 51 as seen through the cover 53.

[0106] like Figure 1 As shown, the processing liquid nozzle 21 is inserted through the through holes 521a and 53a with its front end outlet 21a protruding from the cover 53 and facing the substrate W. The rinsing liquid nozzle 31 is inserted through the through holes 521b and 53b with its front end outlet 31a protruding from the cover 53 and facing the substrate W.

[0107] Multiple heating sources 51 are mounted on the support 52, facing the rotating platform 11 with the clamping cover 53. The heating unit 50 has multiple regions where the heating sources 51 are arranged. That is, the multiple heating sources 51 are arranged in multiple regions. In this embodiment, the heating sources 51 are provided in regions corresponding to different positions in the radial direction of the substrate W, and the output of the heating sources 51 can be controlled according to each region. Moreover, the multiple heating sources 51 are arranged so that they can irradiate the entire surface of the substrate W to be processed.

[0108] For example, such as Figure 4As shown, multiple heating sources 51A to 51D are arranged in four concentric annular regions R1 to R4 (represented by two-point chains in the figure), thereby enabling output control corresponding to each region R1 to R4. Each region R1 to R4, excluding the sector-shaped region where the processing liquid thermometer 80 is located (described later), does not have a heating source 51. In the following description, regions R1 to R4 will be referred to simply as region R without distinction. Furthermore, heating sources 51A to 51D will be referred to simply as heating source 51.

[0109] in addition, Figure 4 In this design, the spacing between the heating sources 51 corresponding to the boundaries of each region R is increased to facilitate identification of region R. However, as long as the controlled regions R are distinguished, the spacing between the heating sources 51 can also be equal. Furthermore, the number of heating sources 51 is not limited to a certain value. Figure 4 The number shown is not specified. For example, hundreds to thousands of heating sources 51 can be densely arranged. By rotating the substrate W relative to the multiple heating sources 51, light can be irradiated onto the entire substrate W, thereby heating the entire surface of the substrate W.

[0110] (Lifting mechanism)

[0111] like Figure 1 As shown, the lifting mechanism 60 supports the heating unit 50 and raises and lowers it. The lifting mechanism 60 has an arm 61 and a support column 62. The arm 61 is a member extending in a direction parallel to the substrate W, and one end is connected to the outer periphery of the support unit 52. The support column 62 is erected in a direction orthogonal to the substrate W and supports the other end of the arm 61. The support column 62 is movable up and down by a drive source such as a ball screw mechanism or cylinder (not shown).

[0112] The heating unit 50 is positioned at any height among the following positions: the loading / unloading position P1, the heating position P2, and the rinsing position P3, driven by the lifting mechanism 60. The positions are as follows.

[0113] Move-out / move-in position P1: A height position separated from the rotating platform 11 upwards to allow insertion of the hand H of the transport robot (see reference). Figure 3 ).

[0114] Heating position P2: A position closer to the substrate W in height than the move-out / move-in position P1 (refer to...) Figure 1 However, it does not come into contact with the processing liquid Lp on the substrate W.

[0115] Rinse position P3: Height position between move-out / move-in position P1 and heating position P2 (refer to...) Figure 2 ).

[0116] (Thermometer for components)

[0117] like Figure 1 As shown, this embodiment includes a component thermometer 70 as a temperature measuring unit T. The component thermometer 70 measures the temperature of a constituent component M, which is a heated object B. As described above, the constituent component M includes a facing surface 11a and a holding member 12. For example, a radiation thermometer is used as the component thermometer 70. A radiation thermometer is a thermometer that focuses light (electromagnetic waves) radiated from an object onto a detection element and outputs an electrical signal corresponding to the temperature. The radiation thermometer of this embodiment measures the temperature of the constituent component M non-contactly based on the light radiated from the constituent component M. More specifically, the light radiated from the constituent component M is received by the light receiving part 70a, and the temperature of the constituent component M is calculated based on its light intensity.

[0118] A component thermometer 70 is positioned opposite the holding member 12 in the stopped rotating holding section 10. That is, the component thermometer 70 is configured such that its temperature measurement range includes the holding member 12 after the rotation has stopped. Thus, the component thermometer 70 can detect the temperature of the holding member 12 when the rotating holding section 10 is stopped.

[0119] Furthermore, the component thermometer 70 positioned in this location faces the circumference of the opposing surface 11a, which is the moving path of the holding member 12, during the rotation of the rotating holding part 10. Therefore, during the rotation of the rotating holding part 10, the component thermometer 70 can detect the temperature of the holding member 12 and the opposing surface 11a. In this embodiment, only one component thermometer 70 is used. As described above, the rotating holding part 10 is heated while rotating, so it is highly likely that multiple holding members 12 located on a common circumference will be heated equally. Therefore, it is sufficient to representatively measure the temperature of one holding member 12. However, multiple component thermometers 70 may also be arranged as described later.

[0120] Additionally, the component thermometer 70 is positioned at a location near the outermost periphery of the area heated by the heating source 51. More specifically, as... Figure 4 As shown, the heating source 51 is located on a circumference further outward than the outermost periphery within the area where it is located. This position is near the outermost processing liquid thermometer 80A among the multiple processing liquid thermometers 80 described later. In this position, the temperature of the processing liquid Lp supplied to the substrate W and spreading is more likely to decrease, thus increasing the heating temperature of the heating source 51. Consequently, the temperature of the heated object B heated by the heating source 51 is more likely to reach its highest point. Therefore, the heated object B, such as the holding member 12, located in the area where the temperature is more likely to reach its highest point is targeted by the component thermometer 70.

[0121] In this embodiment, the component is fixed to the support 52 using a thermometer 70. More specifically, as... Figure 1 and Figure 4 As shown, through holes 521c and 53c are formed near the outer edges of the cover 53 and the support 52, facing the retaining member 12. The through holes 521c of the support 52 and 53c of the cover 53 are located directly above the stop position of the retaining member 12.

[0122] The component thermometer 70 is inserted into the through hole 521c and fixed such that the light-receiving part 70a faces the holding member 12 after stopping via the through hole 53c. The component thermometer 70 is electrically connected to the control device 90. During the operation of the substrate processing apparatus 1, the component thermometer 70 sends the measured value to the control device 90.

[0123] The measuring wavelength of the component thermometer 70 is set to a wavelength that can measure the intensity of light radiated from the holding member 12, which is a constituent member M, and the opposing surface 11a. Furthermore, the measuring wavelength of the component thermometer 70 is preferably different from the wavelength of the light emitted from the heating source 51. By setting the measuring wavelength of the component thermometer 70 to be different from the wavelength of the light emitted from the heating source 51, stray light generation in the processing liquid thermometer 80 can be prevented, thereby suppressing measurement errors.

[0124] For example, it is preferable to set the measuring wavelength of the component thermometer 70 to 8 μm to 14 μm (8 μm or more but 14 μm or less). This measuring wavelength is different from the wavelength of the light emitted by the heating source 51, and is a wavelength capable of measuring the temperature of both the holding component 12 and the rotating platform 11. The emissivity of the component thermometer 70 is preferably set to the emissivity of the heated object B that is most easily heated by the heating section 50 within the measuring range. For example, if the holding component 12, which constitutes the component M, is made of polytetrafluoroethylene (PTFE) containing carbon fibers, its emissivity is set accordingly.

[0125] (Thermometer for the treatment fluid)

[0126] A processing liquid thermometer 80 measures the temperature of the processing liquid Lp that is heated and in contact with the substrate W. The processing liquid thermometer 80 is, for example, a radiation thermometer. In this embodiment, the processing liquid thermometer 80 measures the temperature of the processing liquid Lp non-contactly based on light radiated from it. More specifically, it receives light radiated from the processing liquid Lp via a light-receiving section 80a and calculates the temperature of the processing liquid Lp based on the light intensity.

[0127] The processing liquid thermometers 80 are respectively installed at positions corresponding to multiple regions R. That is, a number of radiation thermometers corresponding to multiple regions R are provided. In this embodiment, four processing liquid thermometers 80A to 80D are fixed to the support 52 corresponding to regions R1 to R4. In addition, the processing liquid thermometers 80A to 80D are simply referred to as processing liquid thermometers 80.

[0128] More specifically, such as Figure 1 and Figure 4 As shown, through holes 521d and 53d are formed on the circumference of the fan-shaped area in the cover 53 and support 52 where no heating source 51 is provided, and on the circumference of each area R1 to R4 where the heating source 51 is provided. The through holes 521d of the support 52 and the through holes 53d of the cover 53 are provided corresponding to the four areas R1 to R4 respectively.

[0129] Each of the processing liquid thermometers 80A to 80D is inserted into each through hole 521d and fixed such that the light-receiving part 80a faces the substrate W held by the rotating holding part 10 through each through hole 53d. The processing liquid thermometers 80 are electrically connected to the control device 90. In this embodiment, the four processing liquid thermometers 80 and the component thermometer 70 are arranged in a straight line along the radial direction of the support part 52 (substrate W). The component thermometer 70 is located near the outermost processing liquid thermometer 80A.

[0130] The measuring wavelength of the processing liquid thermometer 80 is set to a wavelength that allows for the measurement of the light intensity radiated from the processing liquid Lp. Furthermore, the measuring wavelength of the processing liquid thermometer 80 is preferably different from the wavelength of the light emitted from the heating source 51. By setting the measuring wavelength of the processing liquid thermometer 80 to be different from the wavelength of the light emitted from the heating source 51, stray light from the processing liquid thermometer 80 can be prevented, thereby suppressing measurement errors.

[0131] For example, when the treatment solution Lp is a phosphoric acid solution, it is preferable to set the measurement wavelength of the treatment solution thermometer 80 to 2.2 μm to 2.4 μm (2.2 μm or more but 2.4 μm or less). In this embodiment, the measurement wavelength is set to 2.3 μm. 2.2 μm to 2.4 μm is a wavelength with a high intensity ratio between phosphoric acid solution and water. By setting this wavelength as the measurement wavelength of the treatment solution thermometer 80, even if water vapor is generated during treatment, the influence caused by water vapor can be suppressed to measure the temperature of the treatment solution Lp.

[0132] Furthermore, the measuring wavelength of the processing liquid thermometer 80 is different from that of the component thermometer 70. For example, if the measuring wavelength of the processing liquid thermometer 80 is set to 2.2 μm to 2.4 μm as described above, it is different from the measuring wavelength of the component thermometer 70, which is 8 μm to 14 μm.

[0133] (Control device)

[0134] The control device 90 controls each part of the substrate processing apparatus 1. To realize the various functions of the substrate processing apparatus 1, the control device 90 has a processor for executing programs, a memory for storing various information such as programs and operating conditions, and drive circuits for driving each component. Specifically, the control device 90 controls the rotary holding unit 10, the processing liquid supply unit 20, the rinsing liquid supply unit 30, the liquid receiving unit 40, the heating unit 50, the lifting mechanism 60, the component thermometer 70 (temperature measuring unit T), the processing liquid thermometer 80, etc.

[0135] More specifically, such as Figure 5 As shown, the control device 90 includes a mechanism control unit 91, a temperature control unit 92, a stop control unit 93, a notification unit 94, and a storage unit 95. The mechanism control unit 91 controls the operation of the opening and closing mechanism of the rotating holding unit 10, the drive unit 13, the heater 23 of the processing fluid supply unit 20, the valve 24, the valve 33 of the rinsing fluid supply unit 30, the lifting mechanism of the receiving unit 40, and the lifting mechanism 60.

[0136] The temperature control unit 92 controls the heating temperature of the substrate W by the heating unit 50 based on the temperature of the processing liquid Lp measured by the processing liquid thermometer 80. The processing liquid thermometer 80 calculates the temperature of the processing liquid Lp on the substrate W by correcting the measured light intensity based on the emissivity of the processing liquid Lp pre-stored in the storage unit 95. The calculated temperature is then sent to the control device 90. The temperature control unit 92 adjusts the light intensity of the heating source 51 of the heating unit 50 to heat the substrate W so that the temperature of the processing liquid Lp reaches the target temperature. At this time, the temperature of the processing liquid Lp in each region R1 to R4 is controlled by adjusting the light intensity of each heating source 51A to 51D according to the temperature of the processing liquid Lp measured by the processing liquid thermometers 80A to 80D in each region R1 to R4. That is, the control device 90 controls the output of the heating source 51 for each of the multiple regions R based on the temperature of the substrate W measured by the processing liquid thermometer 80.

[0137] When the stop control unit 93 determines that the temperature measured by the component thermometer 70, which serves as the temperature measuring unit T, exceeds a preset set temperature, it stops the power supply to the heating unit 50. The set temperature is determined based on the heat resistance temperature of the material constituting the component M, in a way that is lower than the temperature at which abnormalities such as deformation occur. For example, it is determined based on the heat resistance temperature of the material of the holding component 12 or the material of the rotating platform 11. It can also be set to a set temperature suitable for components with even lower heat resistance temperatures. Furthermore, the stop control unit 93 instructs the mechanism control unit 91 to stop the processing operation of the substrate processing apparatus 1 until a prescribed operation is performed by the operator. For example, stopping the rotation of the rotating holding unit 10, the supply of processing fluid Lp, the supply of rinsing fluid Lc, the loading of the substrate W, etc.

[0138] If it is determined that the temperature measured by the component thermometer 70, which is the temperature measuring unit T, exceeds the set temperature, the notification unit 94 causes the output unit 97 (described later) to output an alarm indicating that the temperature is abnormal. The storage unit 95 stores information required for processing each part of the substrate processing apparatus 1. For example, the storage unit 95 stores information such as the target temperature of the processing liquid Lp, the emissivity of the processing liquid Lp, the emissivity of the holding member 12, the set temperature, and alarm information.

[0139] Additionally, the control device 90 is connected to an input unit 96 and an output unit 97. The input unit 96 includes, for example, a touch panel, keyboard, mouse, and switch. The operator can input information required for the processing of the substrate W, such as the start (ON) and stop (OFF) indications of the power supply of the substrate processing apparatus 1, the start and stop indications of substrate processing, the start and stop indications of heating of the heating unit 50, the start and stop indications of power supply to the heating unit 50, the target temperature of the processing liquid Lp, the emissivity of the processing liquid Lp, the emissivity of the holding member 12, and the set temperature, via the input unit 96.

[0140] The output unit 97 may include, for example, a display, a speaker, a buzzer, and a light. Following the instructions given by the notification unit 94, the output unit 97 outputs an alarm and notifies the operator. For example, it may display an image notifying of an anomaly on the display, emit a warning sound through a speaker or buzzer, or turn on, off, or flash a light.

[0141] [action]

[0142] In addition to the above Figures 1 to 5 In addition, refer to Figure 6 and Figure 7 The operation of the substrate processing apparatus 1 of this embodiment as described above will be explained using a flowchart. Furthermore, a substrate processing method for processing the substrate W using the flowchart described below, and a temperature monitoring method for the substrate processing apparatus 1, are also aspects of this embodiment.

[0143] (Substrate processing)

[0144] First, according to Figure 6 The overall process of substrate processing is explained. Additionally, as... Figure 3 As shown, the heating unit 50 is pre-positioned in the transfer / in position P1, and the cup unit 41 is positioned in the standby position. The valve 24 of the processing fluid supply unit 20 and the valve 33 of the rinsing fluid supply unit 30 are closed. Furthermore, the rotating holding unit 10 has stopped, and the holding member 12 faces the member thermometer 70.

[0145] When the power supply to the substrate processing apparatus 1 is turned on (step S101), the control device 90 begins temperature monitoring (step S102). That is, the component thermometer 70 sends the detected temperature of the constituent component M to the control device 90, and the control device 90 continues or stops supplying power to the heating unit 50 based on the temperature. The temperature monitoring process continues until the power supply to the substrate processing apparatus 1 is turned off (off), and details will be described later.

[0146] When the start instruction for substrate processing is input (in step S103), the holding member 12 is in the open position, and the hand H mounted on the transfer robot (refer to...) Figure 3 After the substrate W is moved between the heating unit 50 and the rotating platform 11, the holding member 12 is in the closed position, thereby supporting the periphery of the substrate W. Thus, the substrate W is held on the opposing surface 11a of the rotating platform 11, spaced apart from the opposing surface 11a (step S104). At this time, the substrate W is positioned so that its center is aligned with the rotation axis of the rotating platform 11. Subsequently, the cup portion 41 rises and is positioned in the processing position (step S105).

[0147] Next, as Figure 2 As shown, the substrate W held by the holding member 12 starts to rotate as the rotating platform 11 rotates, and the heating part 50 descends and is positioned at the rinsing position P3 (step S106).

[0148] Subsequently, the valve 33 of the rinsing fluid supply unit 30 opens, and rinsing fluid Lc is sprayed from the rinsing fluid nozzle 31 onto the vicinity of the center of the substrate W (step S107). When rinsing fluid Lc is supplied to the rotating substrate W, the rinsing fluid Lc moves sequentially toward the outer periphery of the substrate W and expands to the entire surface of the substrate W being processed.

[0149] If this rinsing fluid Lc is not supplied, when the processing fluid Lp is supplied, the surface tension will prevent the processing fluid Lp from wetting and spreading to the entire surface of the substrate W to be processed, resulting in uneven processing. In this embodiment, in order to prevent such uneven processing, the rinsing fluid Lc is supplied in this step before the processing fluid Lp is supplied. When the predetermined rinsing time (preset time) has elapsed (yes in step S108), the valve 33 of the rinsing fluid supply unit 30 is closed, and the spraying of the rinsing fluid Lc from the rinsing fluid nozzle 31 stops (step S109).

[0150] Next, as Figure 1 As shown, the heating unit 50 begins to descend and stops at the heating position P2 (step S110). Then, the valve 24 of the processing liquid supply unit 20 opens, spraying processing liquid Lp from the processing liquid nozzle 21 onto the vicinity of the center of the substrate W (step S111). When processing liquid Lp is supplied to the rotating substrate W, the processing liquid Lp moves sequentially towards the outer periphery of the substrate W and expands to the entire surface of the substrate W to be processed. Since rinsing liquid Lc is pre-supplied to the surface of the substrate W to be processed, the processing liquid Lp wets and expands to the entire surface of the substrate W to be processed, preventing uneven processing.

[0151] Simultaneously with the ejection of the processing liquid Lp, heating of the substrate W begins by irradiation with light from the heating source 51, and temperature measurement of the processing liquid Lp is performed using the processing liquid thermometer 80. During the heating of the substrate W, the temperature control unit 92 of the control device 90 performs feedback control on the output of the heating source 51 based on the temperature measurement result of the processing liquid Lp, thereby ensuring that the temperature of the processing liquid Lp on the substrate W is at the target temperature (step S112). Even if water vapor (H2O) is present due to heating, the low absorbance of water allows the measurement wavelength of the processing liquid thermometer 80 to suppress the influence of water vapor and measure the temperature of the processing liquid Lp. This process of supplying processing liquid Lp to the substrate W while heating it continues until a predetermined processing time (a preset time) has elapsed (step S113, no).

[0152] If the prescribed processing time has elapsed (as in step S113), the valve 24 of the processing liquid supply unit 20 closes, stopping the supply of processing liquid Lp from the processing liquid nozzle 21 (step S114). At the same time, heating by means of the heating source 51 is stopped, i.e., light irradiation is stopped, and temperature measurement by means of the processing liquid thermometer 80 is stopped.

[0153] like Figure 2As shown, the heating unit 50 begins to rise, reaches the rinsing position P3, and stops (step S115). Then, the valve 33 of the rinsing fluid supply unit 30 opens, and rinsing fluid Lc is sprayed from the rinsing fluid nozzle 31 near the center of the substrate W (step S116). When rinsing fluid Lc is supplied to the rotating substrate W, the rinsing fluid Lc moves sequentially toward the outer periphery of the substrate W and expands to the entire surface of the substrate W being processed.

[0154] When rinsing fluid Lc is supplied to the phosphoric acid solution processing fluid Lp, a large amount of water vapor is generated. At this time, since the heating section 50 is located further away from the substrate W than the heating position P2, i.e., the rinsing position P3, the adhesion of water vapor to the heating section 50 can be suppressed. Moreover, since the rinsing position P3 is closer to the substrate W than the transfer-out / transfer-in position P1, liquid splashing can be suppressed, thereby suppressing the adhesion of droplets to the heating section 50.

[0155] When the predetermined rinsing time (preset time) has elapsed (yes in step S117), the valve 33 of the rinsing fluid supply unit 30 closes, and the ejection of rinsing fluid Lc from the rinsing fluid nozzle 31 stops (step S118). The rotating platform 11 stops, and the substrate W held by the holding member 12 stops rotating (step S119). Subsequently, the cup part 41 descends and is positioned in the standby position (step S120).

[0156] like Figure 3 As shown, the heating unit 50 rises and is positioned at the move-out / move-in position P1 (step S121). In this state, the hand H of the transfer robot is inserted under the substrate W, keeping the member 12 in the open position, thereby placing the substrate W on the hand H of the transfer robot and moving it to the outside (step S122). At this time, the substrate W is held with rinsing liquid Lc.

[0157] When a substrate W is present as the next processing target and no stop instruction for substrate processing is input, the substrate processing apparatus 1 continues substrate processing (Yes in step S123). That is, the processing steps S104 to S122 are repeated. When there is no substrate W as the next processing target or a stop instruction for substrate processing is input, the substrate processing apparatus 1 does not continue substrate processing (No in step S123). Subsequently, when the power supply of the substrate processing apparatus 1 is OFF (Yes in step S124), the substrate processing ends. The substrate processing also ends when substrate processing has not started (No in step S103) and the power supply of the substrate processing apparatus 1 is OFF (Yes in step S124).

[0158] (Temperature monitoring and processing)

[0159] Next, according to Figure 7The flowchart illustrates the process of monitoring the temperature of the constituent component M, which is the heated object B, during the substrate processing described above. As described above, when the power supply to the substrate processing apparatus 1 is ON (step S201), the control device 90 continues to receive the temperature of the constituent component M measured by the component thermometer 70. Simultaneously with the power supply to the substrate processing apparatus 1 being ON, power supply to the heating unit 50 begins. If the received temperature is below the set temperature (step S202, no), power supply to the heating unit 50 continues. Thus, temperature monitoring is continuously performed during the period when the power supply to the substrate processing apparatus 1 is ON (step S207, no).

[0160] When the stop control unit 93 determines that the received temperature exceeds the set temperature (in step S202), it stops the power supply to the heating unit 50 (in step S203). Therefore, when the substrate processing apparatus 1 performs substrate processing using the processing liquid Lp, the heating unit 50 stops heating the processing liquid Lp, thus preventing overheating. Furthermore, even if heating by the heating unit 50 continues due to malfunction, or if heating by the heating unit 50 begins due to malfunction, if the set temperature is exceeded, the power supply to the heating unit 50 is stopped, thus preventing overheating.

[0161] Subsequently, according to the instruction of the notification unit 94, the output unit 97 outputs an alarm indicating that the temperature is abnormal (step S204). Furthermore, while the mechanism of the substrate processing apparatus 1 is operating (as in step S205), according to the instruction of the stop control unit 93, the mechanism control unit 91 stops the operation of the mechanism (step S206). For example, it stops the rotation of the rotating holding unit 10, the supply of processing liquid Lp to the processing liquid supply unit 20, and the loading of the next substrate W. Upon receiving this alarm, the operator stops the operation and performs an inspection of the substrate processing apparatus 1. Substrate processing is then stopped until the operator inputs a start instruction for power supply to the heating unit 50 and a start instruction for substrate processing.

[0162] Even without heating by the heating unit 50, if the stop control unit 93 determines that the received temperature exceeds the set temperature (Yes in step S202), it considers some abnormality to have occurred, thereby stopping the power supply to the heating unit 50 (step S203), and the output unit 97 outputs an alarm (step S204), and the operation of the mechanism of the substrate processing apparatus 1 stops (step S206). Therefore, even if there is a heating instruction from the control device 90 due to malfunction or misoperation, the heating unit 50, which is not supplied with power, will not start heating.

[0163] [Effect]

[0164] (1) The substrate processing apparatus 1 of this embodiment includes: a rotation holding unit 10, which holds the substrate W and rotates it; a processing liquid supply unit 20, which supplies processing liquid Lp to the substrate W held and rotated by the rotation holding unit 10; a heating unit 50, which has a heating source 51 that heats the substrate W or the processing liquid Lp in contact with the substrate W without contact; a temperature measuring unit T, which is disposed in a position opposite to the rotation holding unit 10 and measures the temperature of the heated object B heated by the heating unit 50 without contact; and a stop control unit 93, which stops the power supply to the heating unit 50 when it is determined that the temperature measured by the temperature measuring unit T exceeds a preset set temperature.

[0165] Therefore, regarding the heated object B, which is heated simultaneously with the substrate W or the processing liquid Lp using the non-contact heating source 51, overheating can be prevented even if conditions such as prolonged heating time, high heating temperature, or malfunction of the heating source 51 occur. Thus, malfunctions such as deformation of the heated object B due to overheating can be prevented.

[0166] Furthermore, when thermocouples or the like are installed inside the rotating platform 11 to measure the temperature of the heated object B, the wiring for the thermocouples becomes complex and maintenance becomes troublesome. However, in this embodiment, the temperature measuring unit T, positioned opposite the rotating holding part 10, measures the temperature of the heated object B non-contactly, thus simplifying the device structure and making maintenance easier.

[0167] (2) The heated object B includes a component M constituting the rotating holding part 10, and the temperature measuring part T has a component thermometer 70 for measuring the temperature of the component M. Therefore, it is possible to prevent the component M, such as the holding member 12 or the opposing surface 11a of the rotating platform 11, from deforming due to overheating.

[0168] (3) The component thermometer 70 is a radiation thermometer that measures the temperature of the component M based on light radiated from the component M of the rotating holding part 10. Therefore, the temperature of the component M, which moves by rotation, can be measured without contact. Moreover, since the surface of the heated object B is heated non-contactly by the heating source 51, the temperature of the surface of the heated object B is prone to rise rapidly. Thus, for example, when using a thermocouple inside the rotating platform 11 to measure the temperature, a deviation can easily occur between the time point of temperature rise and the time point at which the temperature rise is measured. In this embodiment, the temperature of the surface of the heated object B is measured by means of the component thermometer 70, which is a radiation thermometer, so that the temperature measurement is less likely to be delayed and overheating can be prevented.

[0169] (4) The heating source 51 is a light-emitting element that emits light of a wavelength that is absorbed by the substrate W, and the wavelength of the light emitted by the light-emitting element is different from the measurement wavelength of the component thermometer 70. For example, the processing liquid Lp supplied by the processing liquid supply unit 20 is an aqueous solution containing phosphoric acid, and the light emitted by the light-emitting element is light in the wavelength range of 350 nm to 1060 nm, while the measurement wavelength of the component thermometer 70 is 8 μm to 14 μm. Therefore, stray light can be prevented, thereby suppressing measurement errors.

[0170] (5) The substrate processing apparatus 1 includes: a processing liquid thermometer 80 for non-contactly measuring the temperature of the processing liquid Lp supplied to the rotating substrate W; and a temperature control unit 92 for controlling the heating temperature of the heating unit 50 on the substrate W based on the temperature of the processing liquid Lp measured by the processing liquid thermometer 80. The processing liquid thermometer 80 is a radiation thermometer that measures the temperature of the processing liquid Lp based on light radiated from the processing liquid Lp, and the measuring wavelength of the processing liquid thermometer 80 is different from the measuring wavelength of the component thermometer 70. For example, the measuring wavelength of the processing liquid thermometer 80 is 2.2 μm to 2.4 μm, and the measuring wavelength of the component thermometer 70 is 8 μm to 14 μm.

[0171] Therefore, even when the processing liquid thermometer 80 and the component thermometer 70 must be placed in a narrow area or close to each other, the temperature of each object to be measured can be measured, thus suppressing measurement errors.

[0172] (6) The heating source 51 is a light-emitting element that emits light of a wavelength absorbed by the substrate W, and the wavelength of the light emitted by the light-emitting element is different from the measurement wavelength of the processing liquid thermometer 80 and the component thermometer 70. For example, the processing liquid Lp supplied by the processing liquid supply unit 20 is an aqueous solution containing phosphoric acid, the light emitted by the light-emitting element is light in the wavelength range of 350 nm to 1060 nm, the measurement wavelength of the processing liquid thermometer 80 is 2.2 μm to 2.4 μm, and the measurement wavelength of the component thermometer 70 is 8 μm to 14 μm. Therefore, stray light can be prevented, thereby suppressing measurement errors.

[0173] (7) The rotation holding part 10 has a holding member 12 for holding the substrate W, and a member thermometer 70 is provided at a position facing the holding member 12 in the rotation holding part 10 when it has stopped. Therefore, the temperature of the holding member 12, which is prone to causing problems during the holding and rotation of the substrate W when it deforms due to heating, can be monitored to prevent the occurrence of problems.

[0174] (8) The rotation holding part 10 has a facing surface 11a facing the substrate W, and a component thermometer 70 is provided at a position facing the facing surface 11a. Therefore, the temperature of the facing surface 11a, which is prone to causing defects during the rotation of the substrate W when it deforms due to heating, can be monitored, thereby preventing the occurrence of defects.

[0175] (9) Multiple heating sources 51 are provided in regions corresponding to different positions in the radial direction of the substrate W. The output of each heating source can be controlled according to each region. The component thermometer 70 is located at a position that can measure the temperature near the outermost periphery of the region heated by the heating source 51. Near the outermost periphery, the temperature of the processing liquid Lp tends to decrease, so there is a tendency to increase the heating temperature of the heating source 51, and therefore the corresponding component M is likely to overheat. By measuring the temperature at this position, the component thermometer 70 can prevent the component M from overheating.

[0176] [Variation Example]

[0177] (1) The component M whose temperature is measured by the component thermometer 70, which is the temperature measuring unit T, can be any heated object B heated by the heating unit 50, and is not limited to the opposing surfaces 11a of the holding member 12 and the rotating platform 11. Moreover, the component thermometer 70 may measure only the temperature of the holding member 12 or only the temperature of the rotating platform 11.

[0178] (2) Regarding the position of the temperature measuring unit T, in the described configuration, multiple processing liquid thermometers 80 and component thermometers 70 are arranged in a straight line along the radial direction of the support 52 (substrate W), but the positions of the processing liquid thermometers 80 and component thermometers 70 are not limited to this. They may not be arranged in a straight line as long as the processing liquid thermometers 80 correspond to the area heated by the heating source 51 and the component thermometers 70 correspond to the position of the holding component 12. For example, by means of... Figure 8 By separating the positions of the treatment liquid thermometer 80 and the component thermometer 70 as shown, the measurement error caused by stray light can be reduced.

[0179] (3) Multiple temperature measuring units T may also be provided. For example, the component thermometer 70 may be arranged in all or part of each stop position corresponding to the multiple holding members 12. The component thermometer 70 for measuring the temperature of the holding member 12 and the component thermometer 70 for measuring the temperature of the opposing surface 11a may also be provided separately.

[0180] (4) The temperature measuring unit T may not be supported by the support part 52 of the heating unit 50. For example, such as Figure 9As shown, the component thermometer 70 can also be held further outward than the support 52, and is arranged obliquely relative to the rotation axis of the rotating holding part 10, and is configured to measure the temperature of the holding member 12. This configuration is also included in the case where the temperature measuring part T is arranged facing the rotating holding part 10.

[0181] (5) The processing liquid thermometer 80 may also be used as the temperature measuring unit T. That is, the heated object B may contain processing liquid Lp supplied to the rotating substrate W, and the temperature measuring unit T may have a processing liquid thermometer 80 that measures the temperature of the processing liquid Lp non-contactly. In this case, the processing liquid thermometer 80 and the processing liquid thermometer 80 used to control the heating temperature may be a common processing liquid thermometer or separate processing liquid thermometers. For example, the processing liquid thermometer 80 used as the temperature measuring unit T may be provided separately from the processing liquid thermometers 80A to 80D.

[0182] In this case, it is preferable to use a radiation thermometer for the processing liquid, and the wavelength of the light emitted by the light-emitting element, which serves as the heating source 51, is different from the measurement wavelength of the processing liquid thermometer 80. For example, if the processing liquid Lp is an aqueous solution containing phosphoric acid, the light emitted by the light-emitting element is set to a wavelength in the range of 350 nm to 1060 nm, and the measurement wavelength of the processing liquid thermometer 80 is set to 2.2 μm to 2.4 μm.

[0183] In this configuration, if the temperature measured by the processing liquid thermometer 80 exceeds a preset set temperature, the power supply to the heating unit 50 is stopped. Furthermore, the set temperature at this time does not need to be the same as the set temperature of the component thermometer 70. It is preferable to set it to the temperature of the processing liquid Lp when the component M is approximately at its heat resistance temperature. Moreover, when the rotating holding unit 10 holds the substrate W, the processing liquid thermometer 80 can measure the temperature of the processing liquid Lp on the substrate W; when the rotating holding unit 10 does not hold the substrate W, the processing liquid thermometer 80 can measure the temperature of the opposing surface 11a of the rotating platform 11. Therefore, the set temperature can be changed when measuring the temperature of the processing liquid Lp versus when measuring the temperature of the opposing surface 11a.

[0184] (6) Alternatively, the temperature measuring unit T measures the temperature of the substrate W, and if the temperature of the substrate W exceeds a preset set temperature, the stop control unit 93 stops supplying power to the heating unit 50. In this case, a radiation thermometer can also be used as the temperature measuring unit T. The set temperature does not need to be the same as the set temperature of the component thermometer 70. It is preferable to set it to the temperature of the substrate W when the component M is close to its heat resistance temperature.

[0185] (7) In the described configuration, the object to be heated by the heating unit 50, that is, the object directly heated as the target of heating, is the substrate W, and the processing liquid Lp in contact with the substrate W is indirectly heated. However, the heating unit 50 may also use the processing liquid Lp as the object to be heated. For example, the wavelength of the light emitted by the light-emitting element, which serves as the heating source 51, may be set to the wavelength absorbed by the processing liquid Lp. In this case, the heated object B, which is the object to be measured by the temperature measuring unit T, can still be either the constituent member M or the processing liquid Lp.

[0186] (8) The processing performed by the substrate processing apparatus 1 is not limited to etching. Any apparatus that heats the substrate W while supplying processing liquid Lp for processing is acceptable. For example, it can also be a resist removal process to remove the resist film formed on the substrate W.

[0187] (9) The treatment solution Lp is not limited to phosphoric acid solution. Any treatment solution Lp that requires heating can be used. For example, hydrofluoric acid can also be used. Moreover, in the case of resist removal treatment, sulfuric acid peroxide mixture (SPM) (hydrogen peroxide solution) can also be used as the treatment solution Lp.

[0188] (10) The substrate W to be processed may also be a Si substrate with a resist formed on its surface. Furthermore, the substrate W is not limited to a Si substrate. For example, it may also be a SiC substrate (silicon carbide wafer).

[0189] (11) The number and arrangement of the heating sources 51 are not limited to the configurations illustrated above. Furthermore, there can be multiple regions R, not just four. Moreover, the temperature measurement using the processing liquid thermometer 80 and the heating using the heating sources 51 can be controlled without dividing the area into multiple regions R. Light from the heating sources 51 can also be guided through an optical fiber and emitted onto the substrate W. Therefore, the heating sources 51 do not necessarily need to be positioned above the substrate W. Furthermore, the heating sources 51 only need to be able to heat the substrate W non-contactly. For example, a light-emitting element such as a highly directional laser diode can be used as the heating source 51. Furthermore, the heating source 51 is not limited to a light-emitting element. For example, it can be a heater that performs resistance heating by applying an electric current.

[0190] (12) The support portion 52 for the heating source 51 is a circular member with a diameter that is the same as or larger than the diameter of the substrate W, but is not limited to this. It is acceptable as long as it can irradiate the entire surface of the substrate W relative to the rotating substrate W. For example, it can also be a rectangular member that can cover the radius of the substrate W. As long as it can irradiate the radius of the substrate W, the entire surface of the substrate W can be irradiated by rotating the substrate W. Moreover, the support portion 52 can be provided to swing horizontally, and by irradiating light from the heating source 51 while swinging it, the entire surface of the substrate W can be irradiated.

[0191] Thus, even when the diameter of the support portion 52 is smaller than that of the substrate W, a mechanism can be provided to move the processing liquid nozzle 21 horizontally, so that it moves above the substrate W during processing liquid supply. That is, the location of the processing liquid nozzle 21 is irrelevant as long as it can supply processing liquid Lp towards the vicinity of the center of the substrate W while being irradiated by light from the heating source 51.

[0192] The heating source 51 can also be configured to heat the substrate W by irradiating it with light from below. In this case, it is sufficient to provide a support for the heating source 51 on the opposing surface 11a of the rotating platform 11 in a manner that prevents the rotation from the drive unit 13 from being transmitted. Alternatively, it is sufficient to provide a support on the opposing surface 11a of the rotating platform 11 that rotates at a different speed relative to the rotational speed (revolutions per unit time) of the rotating platform 11 on the substrate W. Of these, the method of irradiating the upper surface of the substrate W with light from the heating source 51, as described above, allows for heating starting from the interface with the processing liquid Lp, and is therefore preferred.

[0193] (13) Regarding the processing liquid thermometer 80, it is sufficient that it can measure the temperature of the processing liquid Lp on the substrate W. Therefore, a mechanism can be provided to move the support of the processing liquid thermometer 80 in the horizontal direction, so that the processing liquid thermometer 80 is moved above the substrate W during temperature measurement. Alternatively, a substrate thermometer can be provided to measure the temperature of the substrate W, and the temperature control unit 92 can control the heating temperature of the heating unit 50 on the substrate W based on the temperature of the substrate thermometer.

[0194] (14) In the described configuration, the mechanism control unit 91 and temperature control unit 92, which are control systems required for normal substrate processing, and the stop control unit 93 and notification unit 94, which are control systems required for temperature monitoring to prevent overheating, are configured as a common control device 90. However, the stop control unit 93 and notification unit 94 may also be configured as control devices separate from the control device 90.

[0195] [Other Implementation Methods]

[0196] The embodiments and variations of the present invention have been described above. However, these embodiments and variations are provided as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, combinations, and modifications can be made without departing from the spirit of the invention. These embodiments or variations thereof are included within the scope or spirit of the invention and are included in the invention as described in the claims.

Claims

1. A substrate processing apparatus, characterized in that, have: The rotating holding part holds the substrate and rotates it. The processing liquid supply unit supplies processing liquid to the substrate that is held and rotated by the rotating holding unit; The heating unit has a heating source that heats the substrate or the processing liquid in contact with the substrate in a non-contact manner. A temperature measuring unit is positioned opposite the rotating holding unit to measure the temperature of the object being heated by the heating unit in a non-contact manner. as well as The stop control unit stops supplying power to the heating unit if it determines that the temperature measured by the temperature measuring unit exceeds a preset set temperature.

2. The substrate processing apparatus according to claim 1, characterized in that, The object to be heated includes constituent components that are heated by the heating unit together with the substrate or the processing liquid and constitute the rotating holding unit. The temperature measuring unit includes a component thermometer for measuring the temperature of the constituent components.

3. The substrate processing apparatus according to claim 2, characterized in that, The component thermometer is a radiation thermometer that measures the temperature of the component based on light radiated from the component of the rotating retaining part.

4. The substrate processing apparatus according to claim 3, characterized in that, The heating source is a light-emitting element that emits light of a wavelength that is absorbed by the substrate. The wavelength of the light emitted by the light-emitting element is different from the wavelength measured by the thermometer on the component.

5. The substrate processing apparatus according to claim 4, characterized in that, have: A processing liquid thermometer is used to non-contactly measure the temperature of the processing liquid supplied to the rotating substrate; and The temperature control unit controls the heating temperature of the substrate by the heating unit based on the temperature of the processing liquid measured by the processing liquid thermometer. The thermometer for the treatment liquid is a radiation thermometer that measures the temperature of the treatment liquid based on the light radiated from it. The measuring wavelength of the thermometer used for the treatment liquid is different from that of the thermometer used for the component.

6. The substrate processing apparatus according to claim 5, characterized in that, The wavelength of the light emitted by the light-emitting element is different from the wavelength measured by the thermometer used for the treatment liquid.

7. The substrate processing apparatus according to claim 6, characterized in that, The processing solution supplied by the processing solution supply unit is an aqueous solution containing phosphoric acid. The light emitted by the light-emitting element has a wavelength in the range of 350nm to 1060nm. The wavelength of the thermometer used to measure the temperature of the treatment solution is 2.2 μm to 2.4 μm. The thermometer used to measure the component has a wavelength of 8μm to 14μm.

8. The substrate processing apparatus according to claim 1, characterized in that, The heated object comprises the processing liquid supplied to the rotating substrate. The temperature measuring unit includes a thermometer for measuring the temperature of the treatment liquid in a non-contact manner.

9. The substrate processing apparatus according to claim 8, characterized in that, The heating source is a light-emitting element that emits light of a wavelength that is absorbed by the substrate. The thermometer for the treatment liquid is a radiation thermometer that measures the temperature of the treatment liquid based on the light radiated from it. The wavelength of the light emitted by the light-emitting element is different from the wavelength measured by the thermometer used for the treatment liquid.

10. The substrate processing apparatus according to claim 9, characterized in that, The processing solution supplied by the processing solution supply unit is an aqueous solution containing phosphoric acid. The light emitted by the light-emitting element has a wavelength in the range of 350nm to 1060nm. The wavelength of the thermometer used to measure the treatment solution is 2.2 μm to 2.4 μm.

11. The substrate processing apparatus according to claim 2, characterized in that, The rotating holding part has a holding member for holding the substrate. The component is equipped with a thermometer positioned opposite the retaining component in the stopped rotating retaining section.

12. The substrate processing apparatus according to claim 2, characterized in that, The rotation holding part has a facing surface that faces the substrate. The component is equipped with a thermometer positioned opposite the opposing surface.

13. The substrate processing apparatus according to claim 2, characterized in that, Multiple heating sources are disposed in regions corresponding to different positions in the radial direction of the substrate. The output of each heating source can be controlled according to each zone. The component is equipped with a thermometer positioned at a location that allows for the measurement of the temperature near the outermost periphery of the area heated by the heating source.

Images