Reliability testing equipment of semiconductor device and probe adjusting method thereof

Abstract

The invention provides reliability test equipment of a semiconductor device and a probe adjusting method thereof, the equipment comprises a plurality of probe groups, the probe groups comprise test probes and accompanying probes, the test probes and the accompanying probes are arranged in parallel at intervals, and the test probes are used for contacting corresponding test bonding pads; the accompanying probes and the test probes are arranged at intervals, the semiconductor device to be tested is provided with accompanying bonding pads, and the accompanying probes are electrically connected through the accompanying bonding pads; the accompanying probe of each probe group is electrically connected with one judgment circuit, each judgment circuit comprises a power supply which is electrically connected with a contact state prompter and the accompanying probe, when the contact depth of the accompanying probe relative to the accompanying bonding pad in contact with the accompanying probe reaches a preset depth, the contact state prompter is started, and the accompanying bonding pad is in contact with the accompanying probe. The contact state prompter prompts that the contact depth of the test bonding pad reaches the preset depth, and the contact depth of the accompanying probe is equal to the contact depth of the test probe. According to the invention, the consistency of the contact quality of the probe and the bonding pad in each test can be ensured.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more specifically to a reliability testing device for semiconductor devices and a probe adjustment method thereof. Background Technology

[0002] In the semiconductor device manufacturing process, reliability testing can reduce R&D risks, optimize design and processes, and ensure reliability, thereby effectively guaranteeing the quality of semiconductor devices. Related technologies typically employ parallel reliability testing of semiconductor devices, significantly improving testing efficiency.

[0003] In related technologies, parallel reliability testing equipment is used to perform reliability testing on semiconductor devices. One type of reliability testing equipment has 16 independent pin headers, each of which can be individually adjusted in three directions: left / right, front / back, and up / down. It can simultaneously test 16 reliability parameters. In these parallel reliability testing equipment, the three directions of the pin headers need to be manually adjusted to ensure good contact between the pin headers and the test pads. The distance in the up / down direction directly affects the contact quality between the pin headers and the test pads. Currently, users typically judge whether the up / down adjustment is adequate based on the size of the pin marks left on the test pads. This method cannot quantitatively determine the up / down distance, and different users may ultimately adjust the up / down distance differently, potentially leading to insufficient or excessive contact depth, thereby reducing the reliability of the semiconductor device under test and ultimately affecting its quality. Summary of the Invention

[0004] The summary section introduces a series of simplified concepts, which will be further explained in detail in the detailed description section. The summary section of this invention is not intended to limit the key features and essential technical features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0005] To address the existing problems, the present invention provides a reliability testing device for semiconductor devices, the device comprising:

[0006] Multiple probe groups, each probe group including at least two test probes and at least two backup probes arranged at intervals and in parallel, each test probe being used to contact a corresponding test pad of a semiconductor device under test, the semiconductor device under test being provided with backup pads for contacting the backup probes, the backup pads being spaced apart from the test pads, and the at least two backup probes being electrically connected to each other through the backup pads;

[0007] Multiple sets of judgment circuits, wherein the auxiliary probes of each set of probes are electrically connected to one set of judgment circuits, wherein each set of judgment circuits includes:

[0008] A contact status indicator and a power supply are provided. The power supply is electrically connected to the contact status indicator and the backup probe. When the contact depth of the backup probe relative to the backup pad it contacts reaches a predetermined depth, the voltage provided by the power supply to the contact status indicator reaches its turn-on voltage, so that the contact status indicator indicates that the contact depth of the test probe in the same probe group relative to the test pad it contacts has reached the predetermined depth, wherein the contact depth of the backup probe in the same probe group is the same as the contact depth of the test probe.

[0009] In one embodiment, each set of the judgment circuits further includes a resistor. The resistor and the contact status indicator in the same judgment circuit are connected in parallel and then connected in series with the auxiliary probe. The resistance of the contact status indicator is more than 100 times the resistance of the resistor.

[0010] In one embodiment, the contact status indicator includes at least one of an indicator light and a sound output device.

[0011] In one embodiment, each probe group includes at least two test probes and at least two auxiliary probes spaced apart in a first direction, wherein,

[0012] Along the first direction, at least one surrogate probe is provided on at least one side of each of the at least two test probes in each probe group; and / or

[0013] Along the first direction, at least one auxiliary probe is provided between two adjacent test probes in each probe group.

[0014] In one embodiment, when each probe group includes two backup probes, a backup probe is provided on each of the opposite sides of the at least two test probes along the first direction, or two backup probes are provided on one side of the at least two test probes; or

[0015] When each of the probe groups includes three backup probes, one backup probe is positioned between two adjacent test probes, and the other two backup probes are located on opposite sides of at least two test probes in a first direction.

[0016] In one embodiment, the at least two test probes and the at least two auxiliary probes in each probe group are arranged parallel and equally spaced; and / or

[0017] The surrogate probe and the test probe are of the same length.

[0018] In one embodiment, when the contact depth of the padding probe relative to the padding pad is less than the predetermined depth, the voltage supplied by the power supply to the contact status indicator is less than the turn-on voltage, and the contact status indicator does not output a prompt.

[0019] In one embodiment, multiple pads of the pads corresponding to the same group of pad probes are electrically connected to each other via wiring, or multiple pads are directly contacted and electrically connected; and / or

[0020] Each of the probe groups includes an adjustment knob connected to its respective test probe and the surrogate probe, the adjustment knob being configured to adjust the position of the test probe and the surrogate probe in the length direction of the test probe.

[0021] In another embodiment of this application, a probe adjustment method for a reliability testing device is provided. The probe adjustment method is applied to the reliability testing device for the aforementioned semiconductor device, and the method includes:

[0022] The positions of the test probe and the padding probe in the same probe group are adjusted along their length so that the padding probe contacts its corresponding padding pad and the test probe contacts its corresponding test pad. The contact depth of the padding probe in the same probe group is the same as the contact depth of the test probe. When the contact depth of the padding probe relative to the padding pad it contacts reaches a predetermined depth, the voltage provided by the power supply to the contact status indicator reaches its turn-on voltage, so that the contact status indicator indicates that the contact depth of the test pad has reached the predetermined depth.

[0023] The semiconductor device reliability testing equipment and probe adjustment method of this application embodiment, by adding a backup probe spaced apart from the test probe, a contact status indicator, a power supply, and a backup pad on the semiconductor device under test for contact with the backup probe, ensures that when the contact depth of the backup probe relative to the backup pad reaches a predetermined depth, the voltage provided by the power supply to the contact status indicator reaches its turn-on voltage, thereby causing the contact status indicator to indicate that the contact depth of the test pad has reached the predetermined depth. This transforms the appropriate contact depth into a clear and intuitive prompt output by the contact status indicator, ensuring the consistency of the contact quality between the test probe and the test pad in each test, reducing losses caused by probe wear due to excessively deep contact between the probe and the pad, and avoiding excessively shallow contact (i.e., the probe not making sufficient contact with the pad), which results in high contact resistance and affects the reliability test results, thus ensuring the accuracy of the semiconductor device reliability test. Attached Figure Description

[0024] The following drawings, which are incorporated herein by reference as part of this invention, are provided for understanding the invention. The drawings illustrate embodiments of the invention and their descriptions, serving to explain the principles of the invention.

[0025] In the attached image:

[0026] Figure 1 A schematic diagram of the structure of a reliability testing device for a semiconductor device according to a specific embodiment of this application is shown;

[0027] Figure 2 This paper shows a schematic diagram of a first type of distribution of the auxiliary probes in a reliability testing apparatus for a semiconductor device according to a specific embodiment of this application;

[0028] Figure 3 This paper illustrates a second distribution of the auxiliary probes in a reliability testing apparatus for a semiconductor device according to a specific embodiment of this application.

[0029] Figure 4 This paper illustrates a third distribution of the auxiliary probes in a reliability testing apparatus for a semiconductor device according to a specific embodiment of this application. Detailed Implementation

[0030] The invention will now be described more fully with reference to the accompanying drawings, which illustrate embodiments of the invention. However, the invention can be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, for clarity, the dimensions and relative dimensions of layers and regions may be exaggerated. The same reference numerals denote the same elements throughout.

[0031] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this invention, the first element, component, area, layer, or portion discussed below may be referred to as the second element, component, area, layer, or portion.

[0032] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below” or “under” the other element or feature will be oriented “above” the other element or feature. Therefore, the exemplary terms “below” and “under” can include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0033] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the invention. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprise” and / or “comprising,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0034] Embodiments of the invention are described herein with reference to cross-sectional views that serve as schematic diagrams of ideal embodiments (and intermediate structures). Thus, variations in the shape shown can be anticipated due to, for example, manufacturing techniques and / or tolerances. Therefore, embodiments of the invention should not be limited to the specific shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing processes. For example, implantation regions shown as rectangular typically have rounded or curved features at their edges and / or implantation concentration gradients, rather than a binary change from implantation regions to non-implantation regions. Similarly, the buried regions formed by implantation can result in some implantation in the region between the buried region and the surface traversed during implantation. Therefore, the regions shown in the figures are substantially schematic, and their shapes are not intended to show the actual shapes of the regions of the device and are not intended to limit the scope of the invention.

[0035] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art. It will also be understood that terms as defined in commonly used dictionaries shall be construed as having the meaning consistent with their meaning in the relevant field and / or the context of this specification, and shall not be interpreted in an ideal or overly formal sense, unless expressly defined herein.

[0036] To fully understand this invention, detailed steps and structures will be set forth in the following description to illustrate the technical solution proposed by this invention. Preferred embodiments of the invention are described in detail below; however, in addition to these detailed descriptions, the invention may have other embodiments.

[0037] In the semiconductor device manufacturing process, reliability testing can reduce R&D risks, optimize design and processes, and ensure reliability, thereby effectively guaranteeing the quality of semiconductor devices. Related technologies typically employ parallel reliability testing of semiconductor devices, significantly improving testing efficiency.

[0038] In related technologies, a reliability parallel test bench is used to test the reliability of semiconductor devices. In one reliability test bench, there are 16 independent pin cards, specifically a 4*4 probe group matrix. Each pin card (also referred to as a probe in this article) can be adjusted independently in three directions: left and right, front and back, and up and down. It can test 16 reliability items at the same time.

[0039] In parallel reliability testing equipment for related technologies, the probe holders need to be manually adjusted in three directions to ensure good contact between the probe holders and the test pads. The vertical distance directly affects the contact quality between the probe holders and the test pads. Currently, technicians typically judge whether the vertical adjustment is adequate based on the size of the probe marks left on the test pads. This method cannot quantitatively determine the vertical distance, and different technicians may ultimately adjust the vertical distance differently. For reliability tests with high precision requirements, different engineers testing the same reliability item may obtain different results. If multiple reliability items are tested simultaneously, technicians need to adjust the vertical, left-right, and front-back distances of each group of probes individually. This may lead to differences in the vertical distance of each group of probe holders, thus affecting the test results of different samples in each reliability item. In addition, since the contact depth (controlled by the vertical direction) cannot be quantified, it may result in too shallow or too deep a contact depth. If the contact is too shallow, the probe and the pad will not make sufficient contact, and the large contact resistance will affect the reliability test results. If the contact is too deep, it will accelerate the wear of the probe tip, leading to a shortened lifespan of the probe holder. This can also easily lead to the pads being punctured, which may cause the underlying insulation layer to crack, reducing the reliability of the device under test and ultimately affecting the quality of the semiconductor device.

[0040] Therefore, in view of the aforementioned technical problems, this application proposes a reliability testing device for semiconductor devices and a probe adjustment method thereof. Figure 3 As shown, the reliability testing equipment for semiconductor devices proposed in this application includes:

[0041] Multiple probe groups 10, each probe group 10 including at least two test probes 11 and at least two backup probes 12 arranged at intervals and in parallel, each test probe 11 is used to contact a corresponding test pad 50 of a semiconductor device under test, the semiconductor device under test is provided with a backup pad 60 for contacting the backup probe 12, the backup pad 60 is arranged at intervals from the test pad 50, and the at least two backup probes 12 are electrically connected to each other through the backup pad 60;

[0042] Multiple sets of judgment circuits, wherein the auxiliary probes 12 of each set of probe groups 10 are electrically connected to one set of judgment circuits and the power supply 40, wherein each set of judgment circuits:

[0043] A contact status indicator 30 is provided, and a power supply 40 is electrically connected to the contact status indicator 30 and the backup probe 12. When the contact depth of the backup probe 12 relative to the backup pad 60 it contacts reaches a predetermined depth, the voltage provided by the power supply 40 to the contact status indicator 30 reaches its turn-on voltage, so that the contact status indicator 30 indicates that the contact depth of the test probe 11 of the same probe group 10 relative to the test pad 50 it contacts has reached the predetermined depth, wherein the contact depth of the backup probe 12 of the same probe group 10 is the same as the contact depth of the test probe 11.

[0044] The semiconductor device reliability testing equipment and probe adjustment method of this application embodiment, by adding a backup probe spaced apart from the test probe, a contact status indicator, a power supply, and a backup pad on the semiconductor device under test for contact with the backup probe, ensures that when the contact depth of the backup probe relative to the backup pad reaches a predetermined depth, the voltage provided by the power supply to the contact status indicator reaches its turn-on voltage, thereby causing the contact status indicator to indicate that the contact depth of the test pad has reached the predetermined depth. This transforms the appropriate contact depth into a clear and intuitive prompt output by the contact status indicator, ensuring the consistency of the contact quality between the test probe and the test pad in each test, reducing losses caused by probe wear due to excessively deep contact between the probe and the pad, extending the probe's service life, and avoiding excessively shallow contact (i.e., the probe not making sufficient contact with the pad), which results in high contact resistance and affects the reliability test results, thus ensuring the accuracy of the semiconductor device reliability test.

[0045] Below, for reference Figures 1 to 4 This application provides a detailed description of the reliability testing equipment for semiconductor devices and the probe adjustment method thereof.

[0046] This application provides a reliability testing device for semiconductor devices, such as... Figure 1 As shown, the device includes multiple probe groups 10.

[0047] In some examples, each probe group includes an adjustment knob (not shown) connected to at least two test probes and at least two auxiliary probes, the adjustment knob being configured to adjust the position of the test probes and the auxiliary probes in the length direction of the test probes, i.e., to adjust the distance between the test probes and the auxiliary probes and their respective pads in the length direction. By adjusting the position of the test probes and the auxiliary probes relative to the test pads and the auxiliary pads respectively by adjusting the adjustment knob, the test probes contact the test pads and adjust the contact depth, and the auxiliary probes contact the auxiliary pads and adjust the contact depth. The test probes and auxiliary probes in the same probe group are adjusted synchronously by the same adjustment knob to make their positions the same, i.e., the contact depth between the test probes and the test pads and the contact depth between the auxiliary probes and the auxiliary pads are the same.

[0048] In one example, each of the probe groups further includes two additional adjustment knobs: one for adjusting the position of the test probe and the surrogate probe in a first direction, and the other for adjusting the position of the test probe and the surrogate probe in a second direction perpendicular to the first direction, wherein the first direction, the second direction, and the length direction of the test probe are perpendicular to each other.

[0049] The device includes multiple sets of judgment circuits. Each probe group's auxiliary probe is electrically connected to a separate judgment circuit. Each probe group can use a judgment circuit to determine whether the contact depth between its test probe and the test pad has reached a predetermined depth.

[0050] Each set of the judgment circuits includes: a contact status indicator 30 for the auxiliary probe 12 and a power supply 40. Exemplarily, the contact status indicator includes at least one of an indicator light and a sound output device, or other indicators capable of visually alerting the user. The indicator light may be, for example, an LED bead, or other suitable light, and the sound output device may include a speaker, a buzzer, or an alarm, or other device capable of emitting sound.

[0051] It is worth mentioning that multiple test pads 50 are provided on the semiconductor device under test. Each test pad 50 is used to make contact with a corresponding test probe and be electrically connected to test the reliability of the semiconductor device under test.

[0052] Each probe group 10 includes at least two test probes 11 spaced apart and arranged in parallel, with test pads 50 corresponding to the test probes 11. Each test probe 11 is used to contact the corresponding test pad 50 of the semiconductor device under test.

[0053] For example, the test probes 11 of at least two probe groups 10 in a plurality of probe groups 10 can simultaneously contact the test pads 50 of their respective semiconductor devices under test, thereby enabling parallel testing and improving testing efficiency.

[0054] At least two backup probes 12 in the same probe group are spaced apart from multiple test probes 11, wherein the backup probes 12 and the test probes 11 are identical in size, shape, and material. A power supply 40 is electrically connected to a contact status indicator 30 and the backup probes 12. The contact status of the backup probes 12 is determined by whether the contact status indicator issues a prompt. Specifically, a backup pad 60 for contacting the backup probes 12 is provided on the semiconductor device under test. The backup pad 60 is spaced apart from the test pads 50, and the backup pads 60 and test pads 50 are located on the same layer. The dimensions (e.g., thickness) of the backup pads 60 and the test pads 50 are substantially the same, and the materials of the backup pads 60 and test pads 50 are also identical. At least two backup probes 12 in the same probe group are electrically connected to each other through backup pads 60 that contact them. For example, at least two backup probes 12 are electrically connected to at least two backup pads 60 respectively, while the at least two backup pads 60 are shorted to each other. For example, the at least two backup pads 60 are the same pad and are shorted, or the backup pads 60 in the at least two backup pads 60 are spaced apart but are electrically connected through wiring.

[0055] The user can adjust the height of the test probe and the padding probe along the length direction by adjusting the knob (each probe includes a contact end for contacting the pad; the height can refer to the height of the contact end relative to the pad in the length direction). When the contact depth of the padding probe 12 relative to the padding pad 60 it contacts reaches a predetermined depth (i.e., when the probe and the corresponding pad are in full contact), the voltage supplied by the power supply 40 to the contact status indicator 30 reaches its turn-on voltage, thereby turning on the contact status indicator 30. For example, the contact status indicator 30 can be an LED, so when the contact depth of the padding probe 12 relative to the padding pad 60 it contacts reaches the predetermined depth, the power supply 40 (e.g., 3.6V power supply) is the LED (e.g., its turn-on voltage (also known as the rated voltage)). The voltage (1.8V) is provided to the LED lamp bead to turn it on, thereby illuminating the LED lamp bead. This allows the user to know that the contact depth between the auxiliary probe 12 and the auxiliary pad 60 has reached the predetermined depth (at this time, the contact resistance between the auxiliary probe 12 and the auxiliary pad 60 is less than 1Ω). Since the contact depth of the auxiliary probe 12 in the same probe group is the same as the contact depth of the test probe 11, when the contact status indicator 30 issues a prompt, the user can know that the contact depth between the test probe 11 and the test pad 50 has reached the predetermined depth. That is, it means that the probe has been adjusted to the appropriate height in the length direction. At this time, the adjustment can be stopped, thereby avoiding the problem of the test probe 11 and the test pad 50 being too deep or too shallow. It is worth mentioning that when adjusting the height of the test probe and the pad probe in the length direction by adjusting the knob, the test probe and the pad probe are adjusted synchronously so that the test results of the pad probe and the test probe can be reflected synchronously. That is, when the contact depth between the pad probe and the pad is indicated by the contact status indicator, it means that the contact depth between the pad probe and the pad has reached the predetermined depth, thus accurately reflecting that the contact depth between the test probe and the test pad has also reached the predetermined depth.

[0056] In some examples, such as Figure 1 As shown, each judgment circuit also includes a resistor 70. The resistor 70 can be connected in parallel with the contact status indicator 30 and then in series with the padding probe 12. For example, the resistance value ranges from 0.8Ω to 1.2Ω, such as 0.8Ω, 1Ω, or 1.2Ω. The specific resistance value can be reasonably set according to the actual circuit requirements. When the padding probe 12 and the padding pad 60 fully reach the predetermined contact depth, i.e., the contact resistance is small, the voltage across the contact status indicator 30 exceeds the turn-on voltage, the contact status indicator 30 turns on, and emits a prompt message, such as an LED light, which then illuminates.

[0057] In one example, when the resistor 70 and the contact status indicator 30 are connected in parallel, the resistance of the contact status indicator 30 is more than 100 times that of the resistor 70. Since the resistance of the resistor 70 is relatively small, for example, 1Ω, the total parallel resistance of the contact status indicator 30 (e.g., the LED bead) and the resistor 70 is also approximately 1Ω. The voltage across the contact status indicator 30 exceeds the turn-on voltage, thus turning it on and issuing a warning message.

[0058] In another example, when the contact depth of the padding probe relative to the padding pad is less than the predetermined depth, the corresponding contact resistance is also relatively large, for example, greater than 1Ω. The voltage supplied by the power supply to the contact status indicator is less than the turn-on voltage, and the contact status indicator does not output a prompt. For example, a 3.6V power supply is connected between the two padding probes 12. The contact status indicator 30 is a red LED with a turn-on voltage of 1.8V and a resistance of several hundred Ω. Since the resistance of resistor 70 is relatively small, for example, 1Ω, the total parallel resistance of the contact status indicator 30 (e.g., the LED and resistor 70 connected in parallel) is also approximately... The contact resistance is 1Ω. When the contact depth of the backup probe relative to the backup pad is less than the predetermined depth, the corresponding contact resistance is also larger, for example, greater than 1Ω. The total parallel resistance is about 1Ω, so the voltage applied to the two ends of the contact status indicator 30 is less than 1.8V, the LED does not turn on, and that is, no prompt is output. When the contact depth of the backup probe relative to the backup pad it contacts reaches the predetermined depth, the contact resistance is less than or equal to 1Ω. Then the voltage applied to the two ends of the contact status indicator 30 is greater than or equal to 1.8V, the LED turns on, and the prompt indicates that the contact depth of the test probes in the same group relative to the test pads they contact has reached the predetermined depth.

[0059] Exemplarily, each probe group includes at least two test probes and at least two said backup probes spaced apart in a first direction. Along the first direction, at least one backup probe is provided on at least one side of the at least two test probes in each probe group, and / or, at least one backup probe may also be provided between two adjacent test probes in each probe group along the first direction. Specifically, as Figure 2 As shown, when each probe group includes two supporting probes 12, along the first direction, for the same probe group, a supporting probe 12 is respectively provided on both sides opposite to at least two test probes (that is, all test probes in the same probe group have opposite sides in the first direction), or as shown in the figure. Figure 3 As shown, for the same probe group, two backup probes 12 are provided on one side of at least two test probes. When each probe group includes three backup probes, as... Figure 4As shown, a backup probe 12 is positioned between two adjacent test probes 11 (more specifically, a backup probe 12 may be positioned between the two middle test probes 11 of a plurality of test probes arranged in the first direction), and two other backup probes 12 are located on opposite sides of at least two test probes in the first direction. In some examples, multiple backup pads corresponding to the backup probes of the same group are electrically connected to each other via wiring, or multiple backup pads are electrically connected via contact. Figure 1 As shown in Figure 3, two backup probes 12 are provided on one side of the probe group 10, and the corresponding two backup pads 60 are in direct contact to achieve electrical connection. It is worth mentioning that the backup pads are only electrically connected to other backup pads in the same group. In other words, there is no electrical connection between the backup pads and other functional devices, conductive structures, test pads, etc.

[0060] In the embodiments of this application, during parallel reliability testing, a contact status indicator is used to reflect whether the contact depth between the backup probe and the backup pad has reached a predetermined depth, and whether the contact depth between the test probe and the test pad has reached a predetermined depth, thereby ensuring the contact quality of the reliability test. In order to further ensure that the contact status between the backup probe and the backup pad can reflect the contact status between the test probe and the test pad, in some examples, the plurality of probes and the at least two backup probes in each probe group are arranged parallel and equally spaced. At the same time, the backup probes and the test probes can be made to have the same length, so that the contact depth of the backup probes is the same as the contact depth of the test probes. Specifically, in the length direction of the test probe, the end of the backup probe away from its corresponding backup pad is at the same height as the end of the test probe away from its corresponding test pad. It is worth mentioning that this height can be understood as the distance between the test probe and the test pad or the distance between the backup probe and the backup pad.

[0061] Each probe group is equipped with the aforementioned judgment circuit. The contact status indicator in the judgment circuit indicates whether the probe has been adjusted to the appropriate height in the length direction, thereby ensuring the consistency of the contact quality between each group of test probes and test pads. Therefore, even if different engineers test the same reliability item, they can maintain a high degree of contact quality, improving the reliability and credibility of the test data. Similarly, for the situation where engineers need to adjust the position of each group of probes one by one when testing multiple reliability items simultaneously, the distance between the test probes and test pads in the length direction of each probe group can also be kept consistent, thereby ensuring that the contact quality of different samples in each reliability item is consistent, improving the reliability and credibility of the test data.

[0062] This concludes the description of the main structure of the reliability testing equipment for semiconductor devices in this application. Other structures may also be included in the complete reliability testing equipment for semiconductor devices, which will not be elaborated here.

[0063] In summary, the semiconductor device reliability testing equipment and probe adjustment method of this application embodiment, by adding a backup probe assembly spaced apart from the test probe, a contact status indicator, a power supply, and a backup pad on the semiconductor device under test for contact with the backup probe, ensures that when the contact depth of the backup probe relative to the backup pad reaches a predetermined depth, the voltage provided by the power supply to the contact status indicator reaches its turn-on voltage. This allows the contact status indicator to indicate that the contact depth of the test pad has reached the predetermined depth, thus translating the appropriate contact depth into a clear and intuitive indication output by the contact status indicator. This ensures the consistency of the contact quality between the test probe and the test pad in each test, reduces losses caused by probe wear due to excessively deep contact, extends the probe's lifespan, and avoids shallow contact (i.e., insufficient contact between the probe and the pad), which results in high contact resistance and affects the reliability test results. Therefore, this ensures the accuracy of the semiconductor device reliability test.

[0064] This application also provides a probe adjustment method for a reliability testing device for the aforementioned semiconductor device. Specifically, it includes adjusting the positions of the test probe and the auxiliary probe in the same probe group along their length, such that the auxiliary probe contacts its corresponding auxiliary pad and the test probe contacts its corresponding test pad. The contact depth of the auxiliary probe in the same probe group is the same as the contact depth of the test probe. When the contact depth of the auxiliary probe relative to its contacting auxiliary pad reaches a predetermined depth, the voltage provided by the power supply to the contact status indicator reaches its activation voltage, causing the contact status indicator to indicate that the contact depth of the test pad has reached the predetermined depth. This probe adjustment method prevents different technicians from obtaining different test results when performing the same reliability test due to the need to judge the adjustment based on the size of the pin mark left on the test pad.

[0065] Although several embodiments have been described herein, it should be understood that many other modifications and embodiments will be conceived by those skilled in the art, all of which will fall within the spirit and scope of the disclosed concept. More particularly, various modifications and changes can be made in terms of the arrangement and / or components of the subject matter within the scope of the disclosure, drawings, and appended claims. In addition to modifications and changes in components and / or arrangement, the use of alternative methods will also be obvious to those skilled in the art.

Claims

1. A reliability testing device for semiconductor devices, characterized in that, The device includes: Multiple probe groups, each probe group including at least two test probes and at least two backup probes arranged at intervals and in parallel, each test probe being used to contact a corresponding test pad of a semiconductor device under test, the semiconductor device under test being provided with backup pads for contacting the backup probes, the backup pads being spaced apart from the test pads, and the at least two backup probes being electrically connected to each other through the backup pads; Multiple sets of judgment circuits, wherein the auxiliary probes of each set of probes are electrically connected to one set of judgment circuits, wherein each set of judgment circuits includes: A contact status indicator and a power supply are provided. The power supply is electrically connected to the contact status indicator and the backup probe. When the contact depth of the backup probe relative to the backup pad it contacts reaches a predetermined depth, the voltage provided by the power supply to the contact status indicator reaches its turn-on voltage, so that the contact status indicator indicates that the contact depth of the test probe in the same probe group relative to the test pad it contacts has reached the predetermined depth, wherein the contact depth of the backup probe in the same probe group is the same as the contact depth of the test probe.

2. The reliability testing equipment as described in claim 1, characterized in that, Each set of the judgment circuits also includes a resistor, and the resistor and the contact status indicator in the same judgment circuit are connected in parallel and then connected in series with the auxiliary probe.

3. The reliability testing equipment as described in claim 2, characterized in that, The resistor and the contact status indicator are connected in parallel, and the resistance of the contact status indicator is more than 100 times the resistance of the resistor.

4. The reliability testing equipment as described in claim 1, characterized in that, The contact status indicator includes at least one of an indicator light and a sound output device.

5. The reliability testing equipment as described in claim 1, characterized in that, Each probe group includes at least two test probes and at least two auxiliary probes spaced apart in a first direction, wherein, Along the first direction, at least one surrogate probe is provided on at least one side of each of the at least two test probes in each probe group; and / or Along the first direction, at least one auxiliary probe is provided between two adjacent test probes in each probe group.

6. The reliability testing equipment as described in claim 5, characterized in that, When each of the probe groups includes two backup probes, one backup probe is provided on each of the opposite sides of the at least two test probes along the first direction, or two backup probes are provided on one side of the at least two test probes. or When each of the probe groups includes three backup probes, one backup probe is positioned between two adjacent test probes, and the other two backup probes are located on opposite sides of the at least two test probes in the first direction.

7. The reliability testing equipment as described in claim 1, characterized in that, The at least two test probes and at least two auxiliary probes in each probe group are arranged in parallel and at equal intervals; and / or The surrogate probe and the test probe are of the same length.

8. The reliability testing equipment as described in claim 1, characterized in that, When the contact depth of the padding probe relative to the padding pad is less than the predetermined depth, the voltage supplied by the power supply to the contact status indicator is less than the turn-on voltage, and the contact status indicator does not output a prompt.

9. The reliability testing equipment as described in claim 1, characterized in that, Multiple pads of the pads corresponding to the same group of pads are electrically connected to each other via wiring, or multiple pads are directly contacted and electrically connected. and / or Each of the probe groups includes an adjustment knob connected to its respective test probe and the surrogate probe, the adjustment knob being configured to adjust the position of the test probe and the surrogate probe in the length direction of the test probe.

10. A probe adjustment method for a reliability testing apparatus for a semiconductor device as described in any one of claims 1 to 9, characterized in that, The method includes: The positions of the test probe and the padding probe in the same probe group are adjusted along their length so that the padding probe contacts its corresponding padding pad and the test probe contacts its corresponding test pad. The contact depth of the padding probe in the same probe group is the same as the contact depth of the test probe. When the contact depth of the padding probe relative to the padding pad it contacts reaches a predetermined depth, the voltage provided by the power supply to the contact status indicator reaches its turn-on voltage, so that the contact status indicator indicates that the contact depth of the test pad has reached the predetermined depth.

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