IGCT driving circuit and IGCT gate voltage clamping method

Abstract

The invention discloses an IGCT (integrated gate commutated thyristor) driving circuit and an IGCT gate voltage clamping method. The IGCT driving circuit comprises a driving signal input module which is used for receiving an external input original driving signal; the driving amplification module is used for amplifying the original driving signal; the gate pole driving loop is used for transmitting the amplified driving signal to the gate pole of the IGCT device; the gate voltage clamping protection module comprises a voltage clamping diode and an RC network, and the voltage clamping diode is used for clamping the gate voltage when the gate voltage exceeds a preset threshold value; the RC network is used for stabilizing the gate voltage when the voltage clamping diode is not conducted; and the driving signal isolation element is used for electrical isolation between the driving amplification module and the gate pole of the IGCT device. The technical problem that the gate pole of the IGCT device is easily damaged by over-high voltage under the condition of high-current turn-off or electromagnetic interference in the prior art is solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of power electronics, in particular to an IGCT driving circuit and an IGCT gate voltage clamping method. BACKGROUND

[0002] As a new type of high-power semiconductor device, the integrated gate-commutated thyristor (IGCT) has been widely used in high-voltage and high-power converter devices, power system reactive power compensation, new energy power generation, and other fields due to its advantages of high voltage, large current, fast switching speed, and low on-state voltage drop. However, the IGCT device in the related technology has a serious problem in actual operation, that is, the gate lacks effective protection measures.

[0003] During the large-current turn-off process, due to the influence of parasitic inductance and other factors in the circuit, a large voltage spike will be generated, which acts on the gate of the IGCT device and may cause the gate voltage to rise instantaneously. In addition, in a complex electromagnetic environment, the IGCT device is also susceptible to electromagnetic interference, which can also cause abnormal fluctuations in the gate voltage. When the gate voltage exceeds the gate cathode blocking voltage of the IGCT chip, the gate of the IGCT device will be broken down. Once the gate is broken down, the IGCT device will lose the switching control ability and cannot work normally, which not only causes the entire converter device to fail to operate normally, but also may cause damage to other related equipment, seriously affecting the safety and reliability of the system. In order to solve the above problems, although some improvement schemes for the IGCT driving circuit have been proposed in the related technology, these schemes often have problems such as complex structure, high cost, and unsatisfactory protection effect, and cannot fundamentally and effectively protect the gate of the IGCT device from damage caused by excessive voltage.

[0004] In summary, for the problem that the gate of the IGCT device in the related technology is easily damaged by excessive voltage under large-current turn-off or electromagnetic interference, there is currently no effective solution. SUMMARY

[0005] The embodiments of the present application provide an IGCT driving circuit and an IGCT gate voltage clamping method to at least solve the technical problem that the gate of the IGCT device in the related technology is easily damaged by excessive voltage under large-current turn-off or electromagnetic interference.

[0006] According to one aspect of the embodiments of this application, an IGCT driving circuit is provided, comprising: a driving signal input module for receiving an externally input raw driving signal and transmitting the raw driving signal to a driving amplification module; a driving amplification module for amplifying the raw driving signal to obtain an amplified driving signal; a gate driving circuit connected to the driving amplification module and the gate of the IGCT device for transmitting the amplified driving signal to the gate of the IGCT device; a gate voltage clamping protection module including a voltage clamping diode and an RC network, wherein the anode of the voltage clamping diode is connected to the gate driving circuit of the IGCT device, and the cathode of the voltage clamping diode is grounded, for clamping the gate voltage when the gate voltage exceeds a preset threshold; the RC network including a voltage and a capacitor, connected in parallel with the voltage clamping diode, for stabilizing the gate voltage when the voltage clamping diode is not conducting; and a driving signal isolation element disposed between the driving amplification module and the gate of the IGCT device for electrical isolation between the driving amplification module and the gate of the IGCT device.

[0007] Furthermore, the drive signal input module includes a signal receiving interface and a signal conditioning circuit. The signal receiving interface is used to connect to an external drive signal source. The signal conditioning circuit is used to preprocess the received drive signal to obtain a preprocessed signal and transmit the preprocessed signal to the drive amplification module. The preprocessing includes at least filtering and shaping. The drive amplification module is also used to amplify the preprocessed signal to obtain an amplified drive signal.

[0008] Furthermore, the drive amplification module includes a power amplifier.

[0009] Furthermore, the gate drive circuit includes a drive signal line and a drive signal isolation element. The drive signal line is used to transmit the amplified drive signal output by the drive amplification module; the drive signal isolation element is used for electrical isolation between the drive amplification module and the IGCT device.

[0010] Furthermore, the drive signal isolation element includes an optocoupler or a transformer.

[0011] Furthermore, the IGCT drive circuit also includes a status monitoring module, which is used to monitor the operating status of the IGCT device in real time and transmit the operating status to an external control unit.

[0012] Furthermore, the status monitoring module includes a voltage sensor and a current sensor for detecting the gate voltage and operating current of the IGCT device, wherein the operating status includes the gate voltage and operating current.

[0013] Furthermore, the voltage clamping diode is a fast recovery diode.

[0014] According to another aspect of the embodiments of this application, an IGCT gate voltage clamping method is also provided, applied to any of the above-mentioned IGCT driving circuits. The method includes: receiving an externally input original driving signal through a driving signal input module; amplifying the original driving signal using a driving amplification module to obtain an amplified driving signal; detecting whether the gate voltage of the IGCT device exceeds a preset threshold and whether the voltage clamping diode is conducting; clamping the gate voltage using the voltage clamping diode when the gate voltage exceeds the preset threshold and the voltage clamping diode is conducting; or stabilizing the gate voltage using an RC network when the gate voltage exceeds the preset threshold and the voltage clamping diode is not conducting.

[0015] Furthermore, when the gate voltage exceeds a preset threshold and the voltage clamping diode is turned on, the gate voltage is clamped by the voltage clamping diode; or when the gate voltage exceeds the preset threshold and the voltage clamping diode is not turned on, the gate voltage is stabilized by an RC network. The method further includes: when the gate voltage is detected to be lower than the preset threshold, the gate voltage is released from the voltage clamping diode.

[0016] In this embodiment, the IGCT driving circuit includes a driving signal input module for receiving an externally input raw driving signal and transmitting it to a driving amplification module; a driving amplification module for amplifying the raw driving signal to obtain an amplified driving signal; and a gate driving circuit connected to the gate of the driving amplification module and the IGCT device for transmitting the amplified driving signal to the IGCT. The device includes a gate; a gate voltage clamping protection module, comprising a voltage clamping diode and an RC network, wherein the anode of the voltage clamping diode is connected to the gate drive circuit of the IGCT device, and the cathode of the voltage clamping diode is grounded, used to clamp the gate voltage when the gate voltage exceeds a preset threshold; the RC network, including a voltage and a capacitor, is connected in parallel with the voltage clamping diode to stabilize the gate voltage when the voltage clamping diode is not conducting; and a drive signal isolation element, disposed between the drive amplification module and the gate of the IGCT device, is used for electrical isolation between the drive amplification module and the gate of the IGCT device. By integrating the drive signal input module, drive amplification module, gate voltage clamping protection module and drive signal isolation element in the gate drive circuit, the goal of effectively clamping and stabilizing the gate voltage while ensuring circuit electrical isolation can be achieved, thereby enhancing the operational reliability and safety of the IGCT device, and solving the technical problem in related technologies where the gate of the IGCT device is susceptible to damage from excessively high voltage under high current turn-off or electromagnetic interference. Attached Figure Description

[0017] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments of this application and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0018] Figure 1 This is a schematic diagram of the IGCT driving circuit provided according to an embodiment of this application;

[0019] Figure 2 This is a circuit diagram of an optional gate voltage self-clamping protection module for the shutdown process according to an embodiment of this application;

[0020] Figure 3 This is a circuit diagram of an optional turn-on process gate voltage self-clamping protection module according to an embodiment of this application;

[0021] Figure 4 This is a flowchart of the IGCT gate voltage clamping method provided according to an embodiment of this application. Detailed Implementation

[0022] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present application.

[0023] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion.

[0024] According to an embodiment of this application, an IGCT driving circuit is provided. Figure 1 This is a schematic diagram of the IGCT driving circuit provided according to an embodiment of this application, as shown below. Figure 1As shown, the IGCT driving circuit includes: a driving signal input module for receiving the original driving signal from an external source and transmitting it to a driving amplification module; a driving amplification module for amplifying the original driving signal to obtain an amplified driving signal; a gate driving circuit connected to the driving amplification module and the gate of the IGCT device for transmitting the amplified driving signal to the gate of the IGCT device; a gate voltage clamping protection module including a voltage clamping diode and an RC network, wherein the anode of the voltage clamping diode is connected to the gate driving circuit of the IGCT device, and the cathode of the voltage clamping diode is grounded, for clamping the gate voltage when the gate voltage exceeds a preset threshold; the RC network including a voltage and a capacitor, connected in parallel with the voltage clamping diode, for stabilizing the gate voltage when the voltage clamping diode is not conducting; and a driving signal isolation element disposed between the driving amplification module and the gate of the IGCT device for electrical isolation between the driving amplification module and the gate of the IGCT device.

[0025] The IGCT driving circuit provided in this embodiment includes a driving signal input module (i.e., Figure 1 The RXD module receives the raw drive signal from the external control system. This signal may be weak and noisy, requiring further processing to effectively drive the IGCT device. The drive amplifier module amplifies the input raw drive signal to ensure sufficient signal strength to trigger the IGCT device's switching action. Simultaneously, the signal conditioning circuit removes interference components, improving signal quality. The gate drive circuit connects the drive amplifier module to the gate of the IGCT device, accurately transmitting the amplified drive signal to the IGCT device's gate for control. The gate voltage clamping protection module consists of a voltage clamping diode and an RC network. The voltage clamping diode conducts when the gate voltage exceeds its preset threshold, clamping the gate voltage at a safe level to prevent breakdown due to excessive voltage. The RC network filters and stabilizes the gate voltage during normal operation, maintaining a stable gate voltage and improving the IGCT device's switching performance. A drive signal isolation element is placed between the drive amplifier module and the IGCT device's gate to provide electrical isolation, protecting the IGCT device from potential high voltage or external interference in the drive circuit.

[0026] Based on the connection relationship, the drive signal input module receives the original drive signal from the external control system and transmits it to the drive amplification module. The power amplifier amplifies the signal power to a level sufficient to drive the gate of the IGCT device, ensuring that the IGCT device can respond quickly and achieve efficient switching control. The amplified drive signal is transmitted to the gate of the IGCT device through the gate drive circuit. The drive signal isolation element provides electrical isolation during transmission, reducing electromagnetic interference and ensuring signal purity and the safety of the IGCT device. The voltage clamping diode and RC network connected in parallel in the gate drive circuit form a gate voltage clamping protection module. Under normal operating conditions, the RC network helps to smooth the gate voltage and improve control accuracy. When encountering a large current turn-off or electromagnetic interference that causes the gate voltage to rise abnormally above the preset voltage threshold, the voltage clamping diode quickly conducts, clamping the gate voltage within the safe threshold and preventing damage to the gate of the IGCT chip. After applying the IGCT drive circuit of this embodiment, the stability of the IGCT device under high current and complex electromagnetic environments is significantly enhanced, the failure rate is reduced, and the device lifespan is extended. Furthermore, by optimizing device parameters and circuit design, this embodiment also improves the reliability, efficiency, and adaptability to electromagnetic environments of the drive circuit, enabling IGCT devices to be more widely used in high-voltage, high-power power conversion systems, such as wind power generation, solar power generation, electric vehicle charging piles, and grid converters.

[0027] In summary, the IGCT drive circuit of this embodiment, by integrating a gate voltage clamping protection module and a drive signal isolation element, can effectively enhance the gate voltage protection of the IGCT device, improve the anti-interference capability and overall performance of the drive circuit, and provide a safer and more reliable solution for high-voltage, high-power power electronics applications.

[0028] Optionally, under normal operating conditions, the gate voltage of the IGCT device is lower than the forward voltage of the voltage clamping diode, and the voltage clamping diode is in the off state. Figure 2 This is a circuit diagram of an optional gate voltage self-clamping protection module for the shutdown process according to an embodiment of this application. Figure 2 In the diagram, D is a voltage clamping diode, and C... off M is a capacitor, M is a voltage signal sensor, MOS is a flexible power electronic switch, and V is a capacitor. GK This is the gate cathode drive voltage of the IGCT device. At this time, the RC network composed of resistors and capacitors plays a certain role in filtering and stabilizing the gate voltage, ensuring the stability of the gate voltage.

[0029] Optionally, when a large current shutdown or electromagnetic interference causes the gate voltage to rise, and the gate voltage exceeds the forward voltage of the voltage clamping diode, Figure 3This is a circuit diagram of an optional gate voltage self-clamping protection module according to an embodiment of this application. Figure 3 In the diagram, D is a voltage clamping diode, L is an inductor, C is a capacitor, D is a clamping diode, M is a voltage signal sensor, MOS is a flexible power electronic switch, and V... GK This is the gate cathode drive voltage of the IGCT device. At this time, the voltage clamping diode quickly turns on, clamping the gate voltage at the conduction voltage level of the voltage clamping diode, so that the gate voltage cannot continue to rise above the gate cathode blocking voltage of the IGCT chip, thereby protecting the gate of the IGCT chip.

[0030] In one optional embodiment, the drive signal input module includes a signal receiving interface and a signal conditioning circuit. The signal receiving interface is used to connect to an external drive signal source. The signal conditioning circuit preprocesses the received drive signal to obtain a preprocessed signal and transmits the preprocessed signal to the drive amplification module. The preprocessing includes at least filtering and shaping. The drive amplification module further amplifies the preprocessed signal to obtain an amplified drive signal. With this structure, the signal receiving interface first receives drive signals from an external control system. These signals may carry noise or fluctuations and are unsuitable for directly driving IGCT devices. The signal conditioning circuit then preprocesses these signals, including filtering and shaping. Filtering helps remove high-frequency noise and interference from the signal, making the signal cleaner. Shaping adjusts the shape of the signal, ensuring clear rising and falling edges, avoiding signal distortion, and thus improving the response speed and accuracy of subsequent circuits. The preprocessed signal is transmitted to the drive amplification module through the signal conditioning circuit. The power amplifier in the drive amplification module further amplifies the signal power to meet the power requirements of the IGCT device's gate drive, ensuring the signal is strong enough to control the IGCT's switching state. The amplified drive signal is then transmitted to the IGCT device's gate through the gate drive circuit. During this process, drive signal isolation components such as optocouplers or transformers ensure electrical isolation of the drive signal, preventing unnecessary interference between the drive circuit and the IGCT device, and also improving signal transmission safety. Through this process, the drive signal received by the IGCT device is both clean and has sufficient power, which is beneficial for the device's efficient and stable operation. When transient voltage spikes or electromagnetic interference occur in the circuit, the voltage clamping diodes and RC networks in the gate voltage clamping protection module can respond quickly, stabilizing the gate voltage and preventing it from exceeding the IGCT chip's withstand voltage range, thereby protecting the IGCT device from overvoltage damage and significantly improving the system's reliability and safety.

[0031] In the above approach, by integrating a signal conditioning circuit into the drive signal input module to filter and shape the original signal, and then combining this with a drive amplification module to amplify the signal power, the IGCT drive circuit in this embodiment can ensure the quality and strength of the drive signal. Simultaneously, the addition of a gate voltage clamping protection module and a drive signal isolation element further enhances the protection of the IGCT device, reducing the impact of external interference on the device and enabling the IGCT device to maintain good operating conditions under various complex operating conditions. This design not only improves the overall performance of the IGCT drive circuit but also reduces equipment maintenance costs and failure rates, making it of significant application value for high-voltage, high-power power electronic systems.

[0032] As an optional embodiment, the drive amplification module may include a logic control module and an adjustment switch. The logic control module sends a control signal to the adjustment switch, amplifying the original drive signal by controlling the switch's opening degree to obtain an amplified drive signal. Using this structure, the logic control module receives the pre-processed drive signal and analyzes and decodes it. The logic control module contains a signal processing algorithm capable of recognizing the signal's intent, such as determining whether the signal is an open or closed signal, and identifying key parameters like signal duration and intensity. Based on the analysis results, the logic control module sends a precise control signal to the adjustment switch. The adjustment switch adjusts its operating state according to the control signal, i.e., by changing its on / off time ratio or adjusting its resistance value during on-time to amplify the drive signal. This amplification is dynamic, capable of real-time adjustment based on the actual needs of the IGCT device and external commands, providing a more precise drive signal, avoiding overdrive or underdrive, extending the IGCT device's lifespan, and improving system efficiency. Compared to fixed-gain amplifiers in related technologies, this signal amplification method implemented through a logic control module and adjustment switch provides more refined drive signal control capabilities. The logic control module can also adjust the amplification parameters based on the real-time status of the IGCT device, such as temperature and operating current, ensuring optimal driving performance under different operating conditions and avoiding efficiency losses and potential failure risks associated with fixed amplification factors. This IGCT drive circuit structure allows for better adaptation to changes in the converter's operating environment. For example, under transient operating conditions requiring higher drive power from the IGCT device, the regulating switch can respond quickly, providing additional power support. In light-load or standby modes, the regulating switch can reduce the power of the drive signal, lowering energy consumption and heat generation, thereby improving the overall system efficiency and thermal management capabilities. Through the combined use of the logic control module and the regulating switch, not only can the drive signal be optimized and amplified, but the IGCT device can also be protected. For instance, when the gate voltage of the IGCT device is detected to be approaching a dangerous threshold, the logic control module can immediately adjust the control strategy of the regulating switch, reducing the drive signal strength to prevent further increases in gate voltage and damage to the device. This real-time feedback mechanism enables the circuit to monitor and adjust in real time, significantly improving device protection and system reliability.

[0033] In this embodiment, by using a logic control module and an adjustment switch as the core components of the drive amplification module, dynamic and precise control of the IGCT drive signal can be achieved, improving the switching performance and operational stability of the IGCT device. At the same time, the amplification parameters can be dynamically adjusted according to the actual situation to optimize system efficiency, reduce energy consumption, and improve the system's adaptability and flexibility.

[0034] In one optional embodiment, the drive amplification module includes a power amplifier. Using the above structure, the original drive signal (or pre-processed signal) is fed into the power amplifier within the drive amplification module. The power amplifier's function is to significantly increase the signal's power level without altering its fundamental shape, making it sufficient to drive the gate of a high-power device like the IGCT. During this stage, the signal energy is significantly boosted to ensure the IGCT device can respond quickly and achieve rapid switching. The power amplifier's design considers the IGCT device's power level and switching speed requirements, achieving optimal amplification through careful selection of parameters such as bandwidth, gain, and output impedance. Furthermore, the power amplifier possesses self-protection capabilities, automatically limiting current under overload or short-circuit conditions to prevent damage to the drive amplification module itself. This protection mechanism, combined with the gate voltage clamping protection module, significantly enhances circuit stability and reliability, reduces system failure rate, and extends the lifespan of the IGCT device and its drive circuit.

[0035] Optionally, the drive amplification module may also include a logic control module, an adjustment switch, and a power amplifier. The logic control module is used to send a control signal to the adjustment switch, and adjust the amplification amplitude of the power amplifier by controlling the opening degree of the adjustment switch, thereby amplifying the original drive signal to obtain the amplified drive signal.

[0036] In one optional embodiment, the gate drive circuit includes a drive signal line and a drive signal isolation element. The drive signal line is used to transmit the amplified drive signal output by the drive amplification module; the drive signal isolation element is used for electrical isolation between the drive amplification module and the IGCT device. With this structure, after the drive amplification module completes signal amplification, the generated high-power drive signal is transmitted through the drive signal line. The drive signal line is the critical path in the circuit for signal transmission from the drive amplification module to the gate of the IGCT device. It needs to have good signal transmission characteristics, such as low impedance, high bandwidth, and low signal loss, to ensure that the amplified drive signal can be delivered to the gate of the IGCT device without loss, achieving high-efficiency control of the IGCT device. The drive signal isolation element is another important component of the gate drive circuit. It is placed between the drive amplification module and the IGCT device to achieve electrical isolation between the two, preventing high voltage and high current in the main circuit from damaging the drive circuit. It also reduces interference from the drive circuit to the main circuit, improving the overall stability of the system. Through the isolation provided by the drive signal isolation element, the amplified drive signal can be safely transmitted through the drive signal line without being affected by voltage fluctuations, current surges, or electromagnetic interference in the main circuit. This design ensures the purity and integrity of the drive signal, improves the response speed and accuracy of the IGCT device to the drive signal, and enables the IGCT device to operate stably and reliably under high voltage and high power conditions. The gate drive circuit, through the coordinated operation of the drive signal line and the drive signal isolation element, not only guarantees efficient transmission of the drive signal but also significantly enhances the safety and reliability of the entire IGCT drive circuit.

[0037] In this embodiment, by employing a gate drive circuit that includes drive signal lines and drive signal isolation elements, efficient and safe transmission of drive signals can be achieved. At the same time, through electrical isolation protection measures, the stability and reliability of the IGCT drive circuit in high-voltage and high-power applications can be significantly enhanced.

[0038] In one optional embodiment, the drive signal isolation element includes an optocoupler or a transformer. Using the above structure, the optocoupler or transformer serves as the drive signal isolation element, forming electrical isolation between the drive amplification module and the gate of the IGCT device. The optocoupler achieves isolation through optical signal transmission, while the transformer utilizes the principle of electromagnetic induction for signal isolation and transmission. Both elements effectively block the direct electrical connection between the drive circuit and the IGCT main circuit, reducing the impact of high voltage, high current, or external electromagnetic interference on the drive circuit, and improving the circuit's safety and reliability. The optocoupler can be configured to consist of a light-emitting diode (LED) and a phototransistor or phototransistor. When the signal output from the drive amplification module passes through the LED, the LED converts the electrical signal into an optical signal. The optical signal then passes through the isolation space (usually air or resin encapsulation), is received by the phototransistor or phototransistor, and converted back into an electrical signal. This signal transmission method not only achieves electrical isolation but also allows bidirectional signal transmission, facilitating communication between the drive circuit and the IGCT device.

[0039] Optionally, for certain high-voltage applications, transformers are more suitable as drive signal isolation components. A transformer can transmit signals from the drive circuit side to the IGCT device side through electromagnetic induction generated between the primary and secondary coils. Transformer isolation not only achieves electrical isolation but also allows for adjustment of signal voltage and current levels as needed to meet the drive requirements of the IGCT device. Furthermore, transformer isolation is more stable, can withstand higher voltage levels, and is suitable for high-voltage, high-current power conversion systems.

[0040] It's important to note that both optocouplers and transformers, when used in the gate drive circuit, ensure the stability and safety of the drive signal during transmission. Optocouplers offer a faster signal response, making them suitable for IGCT devices requiring rapid switching operations; while transformers provide higher isolation voltages, making them suitable for higher voltage power conversion systems. This design ensures that even under extreme operating conditions, the drive signal is accurately transmitted to the gate of the IGCT device, enabling precise device control. By using optocouplers or transformers as drive signal isolation components, the circuit effectively shields against external electromagnetic interference, preventing interference signals from entering the drive circuit and affecting signal transmission and the normal operation of the IGCT device. Simultaneously, electrical isolation protects sensitive electronic components in the drive circuit from the direct impact of high voltage and high current in the IGCT device's main circuit, reducing circuit failures and extending the lifespan of the entire IGCT drive circuit.

[0041] In this embodiment, by using an optocoupler or transformer as a drive signal isolation element, electrical isolation between the drive circuit and the IGCT device can be effectively achieved, improving the stability and security of signal transmission, enhancing the circuit's anti-interference capability, and thus significantly improving the overall performance and reliability of the IGCT drive circuit.

[0042] In an optional embodiment, the IGCT drive circuit further includes a status monitoring module for real-time monitoring of the IGCT device's operating status and transmitting this status to an external control unit. With this structure, the status monitoring module is integrated into the IGCT drive circuit and includes voltage sensors, current sensors, and other possible sensors for real-time monitoring of the IGCT device's operating status. These sensors can detect key parameters of the IGCT device such as gate voltage, cathode current, anode voltage, and temperature, ensuring a comprehensive understanding of the IGCT device's operating condition. The status monitoring module can process the collected status parameters, converting analog signals into digital signals, and transmit this data to the external control unit in real-time via an integrated communication interface (such as RS-485, CAN bus, or analog output port). The external control unit can be a microcontroller, PLC (Programmable Logic Controller), or other control system used to receive and analyze the data sent by the status monitoring module. After receiving the IGCT device operating status data sent by the status monitoring module, the external control unit can evaluate the operating status of the IGCT device. If an anomaly is detected, such as excessively high gate voltage, overloaded cathode current, or overheating operating temperature, the control system will adjust the characteristics of the drive signal through the drive signal input module according to a preset protection strategy. This could involve reducing the amplitude or changing the frequency of the drive signal to prevent the IGCT device from entering an unsafe operating state. Simultaneously, the control system can dynamically optimize the IGCT device's operating parameters based on its real-time status, such as adjusting the gate drive current or optimizing the switching frequency, to improve power conversion efficiency and reduce energy loss.

[0043] Optionally, the status monitoring module can be configured to not only provide real-time feedback on the status of IGCT devices, but also be used for system optimization and fault diagnosis. By analyzing historical data, the control system can optimize the design and parameter settings of the IGCT drive circuit, improving the overall system performance. In addition, status monitoring data is also a key basis for fault diagnosis, helping maintenance personnel to quickly locate problems, perform effective repairs and maintenance, and reduce system downtime and maintenance costs.

[0044] In this embodiment, by adding a status monitoring module to the IGCT drive circuit, real-time monitoring of the IGCT device's operating status can be achieved, providing key operating data to the external control unit and effectively preventing the device from being damaged due to overvoltage, overcurrent, or overheating.

[0045] Optionally, the logic control module is also connected to the status monitoring module to receive feedback signals returned by the status monitoring module via the feedback circuit TDX, and to control the IGCT device.

[0046] In one optional embodiment, the status monitoring module includes a voltage sensor and a current sensor for detecting the gate voltage and operating current of the IGCT device, wherein the operating status includes both the gate voltage and operating current. The voltage sensor and current sensor are respectively connected to the gate and cathode circuits of the IGCT device for real-time monitoring of the gate voltage and operating current. The voltage sensor can detect minute changes in the gate voltage, while the current sensor can accurately measure the current level of the IGCT device. The combined monitoring of both ensures a comprehensive understanding of the IGCT device's operating status.

[0047] Optionally, the analog signals (gate voltage and operating current) captured by the sensors can be converted into digital signals by an analog-to-digital converter (ADC) for subsequent data processing and analysis. These digital signals are then transmitted via the data bus in the circuit to the control unit of the condition monitoring module, such as a microcontroller or digital signal processor (DSP). The control unit is responsible for data collection, storage, and preliminary analysis, packaging key status parameters and transmitting them to an external control unit via a communication interface. Upon receiving the gate voltage and operating current data transmitted by the condition monitoring module, the external control unit immediately performs a status assessment to determine whether the IGCT device is within its normal operating range. If the gate voltage rises to a dangerous level or the operating current exceeds the safety limit, the control system will react quickly. For example, it can reduce the voltage or current of the gate drive signal by adjusting the output of the drive amplifier module to prevent the IGCT device from being damaged by overvoltage or overcurrent. At the same time, the condition monitoring module will also send abnormal status information to the control system to trigger alarms or protection mechanisms to prevent possible system failures.

[0048] Optionally, a status monitoring module can be configured to support dynamic optimization of the IGCT drive circuit's control strategy. Based on real-time feedback of gate voltage and operating current, the control system intelligently adjusts the frequency, duty cycle, and phase of the drive signal to optimize the switching performance of the IGCT device, reduce switching losses, and improve power conversion efficiency. Under light load conditions, the control system may reduce the switching frequency of the IGCT device to minimize unnecessary switching activity; while under heavy load conditions, it may increase the strength of the drive signal to ensure the IGCT device can respond quickly and maintain stable system operation.

[0049] In this embodiment, by integrating a status monitoring module including voltage and current sensors into the IGCT drive circuit, real-time and accurate monitoring of the IGCT device's operating status can be achieved, enabling immediate response to potential risks, implementation of protective measures, and prevention of device damage.

[0050] In one optional embodiment, the voltage clamping diode is a fast recovery diode. Using the above structure, the fast recovery diode (FRD) features rapid reverse recovery and low reverse recovery loss. Compared to ordinary diodes, the FRD can release the charge stored in the PN junction more quickly during reverse recovery, thereby significantly shortening the reverse recovery time, reducing peak voltage and current during reverse recovery, and decreasing the switching losses of the IGCT device. In specific operation, in the IGCT drive circuit, when the IGCT device is working normally and the gate voltage does not rise abnormally, the fast recovery diode is in the off state. Its reverse blocking characteristic ensures a high impedance between the gate and ground, preventing any impact on the gate voltage. At this time, the RC network (a combination of resistors and capacitors) is responsible for filtering out high-frequency noise on the gate, maintaining the stability of the gate voltage. When the gate voltage suddenly rises due to various reasons (such as high-current turn-off, electromagnetic interference, etc.) and reaches the clamping voltage of the fast recovery diode, the FRD quickly switches from the reverse cutoff state to the forward conduction state. The gate voltage is limited to the clamping voltage level of the FRD, which can effectively prevent overvoltage damage to the gate of the IGCT device caused by voltage spikes. Because the fast recovery diode has a fast reverse recovery characteristic, it can immediately conduct at the moment of abnormal gate voltage rise, providing voltage clamping protection and preventing the gate voltage of the IGCT device from exceeding the safe threshold. Furthermore, the low-loss characteristic of the fast recovery diode during the reverse recovery process means that it does not introduce additional energy consumption while performing voltage clamping. Especially in high-power applications with frequent switching, the use of fast recovery diodes can reduce energy loss during switching, reduce circuit heat generation, and improve the overall energy efficiency ratio. The introduction of fast recovery diodes in IGCT drive circuits not only provides real-time protection of the gate voltage but also enhances the overall stability of the circuit, reduces gate voltage fluctuations caused by voltage spikes or electromagnetic interference, prevents the IGCT device from entering an uncontrollable state, reduces the system failure rate, and improves operational safety and reliability.

[0051] In this embodiment, using a fast recovery diode as a voltage clamping diode not only provides efficient transient voltage protection but also significantly reduces reverse recovery losses, improves the operating efficiency and reliability of the IGCT drive circuit, and enables the circuit to operate more stably in a high-voltage, high-current environment.

[0052] According to an embodiment of this application, an IGCT gate voltage clamping method is also provided.Figure 4 This is a flowchart of an IGCT gate voltage clamping method according to an embodiment of this application. The method is applied to any of the above-mentioned IGCT driving circuits and includes:

[0053] Step S102: Receive the original drive signal from the external input through the drive signal input module;

[0054] Step S104: The original drive signal is amplified using a drive amplification module to obtain an amplified drive signal.

[0055] Step S106: Detect whether the gate voltage of the IGCT device exceeds a preset threshold and whether the voltage clamping diode is turned on;

[0056] Step S108: If the gate voltage exceeds a preset threshold and the voltage clamping diode is turned on, the gate voltage is clamped by the voltage clamping diode; or if the gate voltage exceeds the preset threshold and the voltage clamping diode is not turned on, the gate voltage is stabilized by an RC network.

[0057] Optionally, the drive signal input module is the primary component of the IGCT drive circuit, responsible for receiving raw drive signals from external sources. These signals typically originate from control units such as DSPs or microcontrollers and may carry information about IGCT device on / off commands. Upon receiving the raw drive signal, the drive amplification module amplifies the signal to ensure sufficient strength to drive the device when transmitted to its gate. This amplification is achieved through a power amplifier, a crucial step for ensuring the IGCT device can reliably perform switching actions. A voltage sensor in the status monitoring module continuously monitors the IGCT device's gate voltage and compares it to a preset threshold. The preset threshold is set based on the IGCT device's gate voltage tolerance and safe operating conditions; for example, it can be set to be close to but below the device's gate-cathode blocking voltage to prevent gate breakdown. If the detected gate voltage exceeds the preset threshold, and the voltage clamping diode (fast recovery diode) is not yet conducting, the voltage clamping diode will automatically turn on. The fast recovery diode provides a low-impedance path to ground for the gate, quickly clamping excessively high gate voltages to the diode's forward voltage level, thus protecting the IGCT device from overvoltage damage. The RC (resistor-capacitor) network filters and stabilizes the gate voltage, preventing voltage fluctuations. When the gate voltage exceeds a preset threshold, but the voltage clamping diode fails to conduct for some reason, the RC network continues to operate, stabilizing the gate voltage by absorbing or releasing charge, preventing excessive fluctuations, until the voltage clamping diode responds and conducts, or the gate voltage naturally drops to a safe range. This approach combines the protective functions of the voltage clamping diode and the RC network. The voltage clamping diode primarily provides immediate protection against voltage spikes, while the RC network smooths and stabilizes the gate voltage before and after voltage spikes occur. Together, they ensure the safety and stability of the IGCT device's gate voltage.

[0058] In this embodiment, by monitoring the gate voltage in real time and taking corresponding clamping measures, the risk of IGCT device damage under overvoltage conditions can be significantly reduced, improving the overall system safety. The combination of the voltage clamping method and the drive circuit enables the IGCT device to operate stably even under harsh operating conditions, enhancing system reliability. Reasonable voltage clamping not only protects the IGCT device but also reduces switching losses, optimizes power conversion efficiency, and improves the overall circuit performance. In summary, the above methods, through tight integration with the IGCT drive circuit, can achieve comprehensive protection of the IGCT device gate voltage, which is of great value for the design and operation of high-voltage, high-power power electronic systems.

[0059] In one optional embodiment, when the gate voltage exceeds a preset threshold and the voltage clamping diode is turned on, the gate voltage is clamped by a voltage clamping diode; or when the gate voltage exceeds a preset threshold and the voltage clamping diode is not turned on, the gate voltage is stabilized by an RC network, and the method further includes: when the gate voltage is detected to be lower than a preset threshold, the voltage clamping diode is released from clamping the gate voltage.

[0060] Optionally, the voltage sensor in the status monitoring module continuously monitors the gate voltage of the IGCT device. Once the gate voltage exceeds a preset threshold, it triggers the clamping operation of the voltage clamping diode. Once the gate voltage is clamped by the voltage clamping diode and subsequently drops below the preset threshold during circuit dynamics, the voltage clamping diode will automatically return to the off state, releasing the clamping of the gate voltage. This is because the fast recovery diode has bidirectional voltage sensitivity; when the reverse voltage is below its threshold, the diode will automatically turn off, returning to a high-impedance state, allowing normal gate drive signals to pass without being affected. This method provides an adaptive management mechanism that can dynamically enable and disable the voltage clamping diode based on the actual fluctuations in the gate voltage. This not only protects the IGCT device from overvoltage damage in a timely manner but also allows it to immediately return to its normal operating state after the voltage returns to normal, avoiding the negative impact of continuous clamping on circuit performance.

[0061] As an optional embodiment, the IGCT gate voltage clamping method further includes adjusting the parameters of the RC network to adapt to the gate voltage stability requirements under different operating conditions. By optimizing the parameters of the RC network, the gate voltage is ensured to fluctuate within the normal operating range, thereby improving the operating efficiency and reliability of the IGCT device.

[0062] As an optional embodiment, the IGCT gate voltage clamping method further includes limiting the gate voltage within a safe range by means of a parallel resistor when the voltage clamping diode is turned on, to ensure that the IGCT device is not damaged by excessive voltage.

[0063] As an optional embodiment, the IGCT gate voltage clamping method further includes: automatically adjusting a preset threshold using an external control unit to adapt to the gate voltage clamping requirements under different operating conditions.

[0064] As an optional embodiment, the IGCT gate voltage clamping method further includes employing a transient voltage suppression (TVS) diode as an alternative to the voltage clamping diode to enhance the robustness and safety of the circuit.

[0065] Based on the above embodiments and optional embodiments, this application proposes an optional implementation method. In practical applications, the IGCT driving circuit with gate voltage clamping diode of this embodiment firstly inputs the external driving signal into the signal conditioning circuit through the signal receiving interface of the driving signal input module. The signal conditioning circuit performs filtering, shaping and other conditioning processes on the input driving signal to remove noise and interference in the signal and improve the quality of the driving signal.

[0066] The conditioned drive signal (i.e., the pre-processed signal) is transmitted to the drive amplification module, which uses a power amplifier to amplify the drive signal, providing sufficient drive power to the gate of the IGCT device. The amplified drive signal is then transmitted to the gate of the IGCT device through the drive signal line of the gate drive circuit. Drive signal isolation components (such as optocouplers or transformers) provide electrical isolation between the drive amplification module and the IGCT device, improving the circuit's anti-interference capability and safety.

[0067] Under normal operating conditions, the gate voltage of the IGCT device is lower than the forward voltage of the voltage clamping diode, and the voltage clamping diode is in the off state. At this time, the RC network composed of resistors and capacitors plays a filtering and stabilizing role on the gate voltage, ensuring the stability of the gate voltage and enabling the IGCT device to work normally and stably.

[0068] When a large current shutdown or electromagnetic interference causes the gate voltage to rise and exceed the forward voltage of the voltage clamping diode, the voltage clamping diode quickly turns on, clamping the gate voltage at the forward voltage level of the voltage clamping diode. This prevents the gate voltage from rising further and exceeding the gate-cathode blocking voltage of the IGCT chip, thus protecting the gate of the IGCT chip.

[0069] Meanwhile, the voltage and current sensors of the status monitoring module monitor parameters such as the gate voltage and operating current of the IGCT device in real time, and transmit the monitored information to the external control unit. The external control unit can monitor and adjust the operating status of the IGCT device based on this information to ensure that the IGCT device is always in a normal operating state.

[0070] For example, in a high-voltage, high-power converter, the IGCT drive circuit of this embodiment is applied. By reasonably selecting the parameters of the voltage clamping diode, resistor, and capacitor, and optimizing the design of the drive signal input module, drive amplification module, and gate drive circuit, the gate of the IGCT device does not break down even when faced with large current turn-off and interference from complex electromagnetic environments during long-term operation. This can effectively improve the reliability and stability of the converter and reduce the maintenance cost and failure rate of the equipment.

[0071] This embodiment can achieve at least one of the following effects:

[0072] (1) In this embodiment, a gate voltage clamping protection module is set in the gate drive circuit of the IGCT drive circuit. The protection circuit composed of voltage clamping diodes and resistor-capacitor components can quickly clamp the gate voltage when the gate voltage rises abnormally, effectively preventing the gate of the IGCT chip from being broken down, and significantly improving the working reliability and safety of the IGCT device.

[0073] (2) The gate voltage clamping protection module in this embodiment has a simple structure and can be implemented by simply connecting common electronic components such as voltage clamping diodes, resistors and capacitors in parallel. It does not increase the circuit complexity and cost excessively, and has high practicality and economy.

[0074] (3) The drive signal input module and drive amplification module in this embodiment can effectively condition and amplify the input drive signal, provide the IGCT device with a high-quality and sufficient power drive signal, and ensure that the IGCT device can work normally and stably.

[0075] (4) In this embodiment, by setting a drive signal isolation element, electrical isolation between the drive amplification module and the IGCT device is achieved, which improves the anti-interference capability of the circuit, reduces the impact of external interference on the operation of the IGCT device, and further improves the reliability and stability of the circuit.

[0076] (5) In this embodiment, a fast recovery diode is used as a voltage clamping diode, which can quickly respond to changes in gate voltage and clamp the gate voltage in a timely manner, thereby improving the response speed and protection effect of the protection circuit.

[0077] (6) In this embodiment, the parameters of the resistor and capacitor can be flexibly selected according to the gate characteristics of the IGCT device and the actual working environment, so as to better adapt to different working conditions and ensure the effectiveness and stability of the protection circuit.

[0078] (7) The status monitoring module set in this embodiment can monitor the working status of the IGCT device in real time, provide accurate working status information to the external control unit, facilitate the external control unit to monitor and adjust the IGCT device, and improve the intelligence and maintainability of the system.

[0079] According to an embodiment of this application, an embodiment of a non-volatile storage medium is also provided. Optionally, in this embodiment, the non-volatile storage medium includes a stored program, wherein, when the program is running, it controls the device where the non-volatile storage medium is located to execute any of the above-mentioned IGCT gate voltage clamping methods.

[0080] Optionally, in this embodiment, the non-volatile storage medium may be located in any computer terminal in a group of computer terminals in a computer network, or in any mobile terminal in a group of mobile terminals, and the non-volatile storage medium includes stored programs.

[0081] Optionally, a program that controls the device containing the non-volatile storage medium to execute any of the above-described IGCT gate voltage clamping method steps during program execution.

[0082] According to an embodiment of this application, an embodiment of a processor is also provided. Optionally, in this embodiment, the processor is used to run a program, wherein the program executes any of the above-described IGCT gate voltage clamping methods.

[0083] According to an embodiment of this application, an embodiment of a computer program product is also provided, which, when executed on a data processing device, is adapted to execute a program that initializes the IGCT gate voltage clamping method steps described above.

[0084] This invention provides an electronic device, which includes a processor, a memory, and a program stored in the memory and executable on the processor. When the processor executes the program, it implements the steps of any of the above-described IGCT gate voltage clamping methods.

[0085] The order of the above embodiments of the present invention is merely for description and does not represent the superiority or inferiority of the embodiments.

[0086] In the above embodiments of the present invention, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0087] In the several embodiments provided in this application, it should be understood that the disclosed technical content can be implemented in other ways. The device embodiments described above are merely illustrative; for example, the division of modules described above can be a logical functional division, and in actual implementation, there may be other division methods. For example, multiple modules or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces, or indirect coupling or communication connection between modules, and may be electrical or other forms.

[0088] The modules described above as separate components may or may not be physically separate. Similarly, the components shown as modules may or may not be physical modules; they may be located in one place or distributed across multiple modules. Some or all of the modules can be selected to achieve the purpose of this embodiment, depending on actual needs.

[0089] Furthermore, the functional modules in the various embodiments of the present invention can be integrated into one processing module, or each module can exist physically separately, or two or more modules can be integrated into one module. The integrated modules described above can be implemented in hardware or as software functional modules.

[0090] If the aforementioned integrated modules are implemented as software functional modules and sold or used as independent products, they can be stored in a computer-readable non-volatile storage medium. Based on this understanding, the technical solution of this invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a non-volatile storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods of the various embodiments of this invention. The aforementioned non-volatile storage medium includes various media capable of storing program code, such as USB flash drives, read-only memory (ROM), random access memory (RAM), portable hard drives, magnetic disks, or optical disks.

[0091] The above are merely preferred embodiments of the present invention. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. An IGCT driving circuit, characterized in that, include: The drive signal input module is used to receive the raw drive signal from the outside and transmit the raw drive signal to the drive amplification module; The drive amplification module is used to amplify the original drive signal to obtain an amplified drive signal; A gate drive circuit, connected to the gate of the drive amplification module and the IGCT device, is used to transmit the amplified drive signal to the gate of the IGCT device; A gate voltage clamping protection module includes a voltage clamping diode and an RC network. The anode of the voltage clamping diode is connected to the gate drive circuit of the IGCT device, and the cathode of the voltage clamping diode is grounded. It is used to clamp the gate voltage when the gate voltage exceeds a preset threshold. The RC network includes a voltage and a capacitor and is connected in parallel with the voltage clamping diode. It is used to stabilize the gate voltage when the voltage clamping diode is not conducting. A drive signal isolation element is disposed between the drive amplification module and the gate of the IGCT device for electrical isolation between the drive amplification module and the gate of the IGCT device.

2. The IGCT driving circuit according to claim 1, characterized in that, The drive signal input module includes a signal receiving interface and a signal conditioning circuit, wherein, The signal receiving interface is used to connect to an external drive signal source; The signal conditioning circuit is used to preprocess the received drive signal to obtain a preprocessed signal, and transmit the preprocessed signal to the drive amplification module. The preprocessing includes at least filtering and shaping. The drive amplification module is also used to amplify the preprocessed signal to obtain the amplified drive signal.

3. The IGCT driving circuit according to claim 1, characterized in that, The drive amplification module includes a power amplifier.

4. The IGCT driving circuit according to claim 1, characterized in that, The gate drive circuit includes a drive signal line and a drive signal isolation element, wherein, The drive signal line is used to transmit the amplified drive signal output by the drive amplification module; The drive signal isolation element is used for electrical isolation between the drive amplification module and the IGCT device.

5. The IGCT driving circuit according to claim 4, characterized in that, The drive signal isolation element includes an optocoupler or a transformer.

6. The IGCT driving circuit according to claim 1, characterized in that, The IGCT driving circuit also includes a status monitoring module, which is used to monitor the working status of the IGCT device in real time and transmit the working status to an external control unit.

7. The IGCT driving circuit according to claim 6, characterized in that, The status monitoring module includes a voltage sensor and a current sensor for detecting the gate voltage and operating current of the IGCT device, wherein the operating status includes the gate voltage and the operating current.

8. The IGCT driving circuit according to claim 1, characterized in that, The voltage clamping diode is a fast recovery diode.

9. A method for clamping the gate voltage of an IGCT, characterized in that, The method, applied to the IGCT driving circuit according to any one of claims 1 to 8, comprises: The original drive signal is received from the external input through the drive signal input module; The original driving signal is amplified using the driving amplification module to obtain an amplified driving signal. Detect whether the gate voltage of the IGCT device exceeds a preset threshold and whether the voltage clamping diode is conducting; When the gate voltage exceeds the preset threshold and the voltage clamping diode is turned on, the gate voltage is clamped by the voltage clamping diode; or When the gate voltage exceeds the preset threshold and the voltage clamping diode is not conducting, the RC network is used to stabilize the gate voltage.

10. The method according to claim 9, characterized in that, If the gate voltage exceeds the preset threshold and the voltage clamping diode is turned on, the gate voltage is clamped using the voltage clamping diode; or if the gate voltage exceeds the preset threshold and the voltage clamping diode is not turned on, the gate voltage is stabilized using the RC network, and the method further includes: If the gate voltage is detected to be lower than the preset threshold, the voltage clamping diode is released from clamping the gate voltage.

Images