Integrated gate commutated thyristor and preparation method thereof

Abstract

The invention relates to the field of semiconductors, provides an integrated gate commutated thyristor and a preparation method thereof, and at least can solve the problems of turn-off softening, overshoot control, process window and high-temperature stability. The preparation method comprises: providing a substrate; forming an initial buffer layer, wherein the initial buffer layer is located on the substrate; hydrogen injection processes are carried out on the initial buffer layer to obtain a buffer layer precursor, the hydrogen injection processes at least comprise a first hydrogen injection process, a second hydrogen injection process and a third hydrogen injection process which are continuous, and first energy of the first hydrogen injection process, second energy of the second hydrogen injection process and third energy of the third hydrogen injection process are different; and / or the first dosage of the first hydrogen injection process, the second dosage of the second hydrogen injection process and the third dosage of the third hydrogen injection process are different; the buffer layer precursor is subjected to an annealing process to obtain the hydrogen buffer layer, the temperature range of the annealing process is 350-500 DEG C, and no endpoint value is included.

Description

Technical Field

[0001] This disclosure relates to the semiconductor field, and in particular to an integrated gate-commutated thyristor and its fabrication method. Background Technology

[0002] An integrated gate-commutated thyristor (IGCT) is an advanced power electronic device that combines the advantages of a gate-commutated thyristor (GCT) and an insulated-gate bipolar transistor (IGBT). The basic structure of an IGCT is similar to a GTO, featuring high blocking capability and low on-state voltage drop. However, compared to a GTO, an IGCT offers a 10-fold increase in switching speed and requires less drive power. This makes IGCTs more advantageous in high-frequency switching applications. Furthermore, IGCTs do not require complex snubber circuits, further simplifying system design.

[0003] Field termination / buffer layer technology is a key path to achieving a trade-off between high breakdown voltage and low loss performance in medium and high voltage power devices (such as IGBTs and IGCTs). By constructing a controlled n-type buffer layer on the back side of the chip, conduction losses can be reduced and switching dynamics improved without sacrificing breakdown voltage. Hydrogen ion implantation followed by medium-temperature annealing can form hydrogen-related donors in silicon. The mechanism is believed to be related to the adsorption of hydrogen on oxygen impurities / interstitials, thus exhibiting n-type equivalent doping. This method can form deep buffer layers without requiring front-side thinning capabilities, making it suitable for high-breakdown voltage devices and significantly improving the design freedom of field termination (reducing fragmentation rate and flexibly controlling the profile).

[0004] However, the hydrogen buffer layer prepared by the current process has contradictions in terms of shutdown softening, overshoot control, process window and high temperature stability. Summary of the Invention

[0005] This disclosure provides an integrated gate-commutated thyristor and its fabrication method, which at least helps to solve problems related to turn-off softening, overshoot control, process window, and high-temperature stability.

[0006] According to some embodiments of this disclosure, one aspect of this disclosure provides a method for fabricating an integrated gate-commutated thyristor, comprising: providing a substrate; forming an initial buffer layer located on the substrate; performing a hydrogen implantation process on the initial buffer layer to obtain a buffer layer precursor, the hydrogen implantation process comprising at least a first hydrogen implantation process, a second hydrogen implantation process, and a third hydrogen implantation process, wherein a first energy of the first hydrogen implantation process, a second energy of the second hydrogen implantation process, and a third energy of the third hydrogen implantation process are different; and / or, a first dose of the first hydrogen implantation process, a second dose of the second hydrogen implantation process, and a third dose of the third hydrogen implantation process are different; and performing an annealing process on the buffer layer precursor to obtain a hydrogen buffer layer, wherein the annealing process has a temperature range of 350°C to 500°C, excluding endpoint values.

[0007] In some embodiments, at least one of the first energy, the second energy, and the third energy ranges from 0.1 keV to 1000 keV.

[0008] In some embodiments, the number of hydrogen injection processes ranges from 3 to 6.

[0009] In some embodiments, the first energy of the first hydrogen injection process, the second energy of the second hydrogen injection process, and the third energy of the third hydrogen injection process are not the same; at least two of the first dose of the first hydrogen injection process, the second dose of the second hydrogen injection process, and the third dose of the third hydrogen injection process are the same.

[0010] In some embodiments, at least two of the first energy of the first hydrogen injection process, the second energy of the second hydrogen injection process, and the third energy of the third hydrogen injection process are the same; the first dose of the first hydrogen injection process, the second dose of the second hydrogen injection process, and the third dose of the third hydrogen injection process are different.

[0011] In some embodiments, the process parameters of the annealing process include: the annealing atmosphere is nitrogen or argon, and the annealing time ranges from 10 min to 120 min.

[0012] In some embodiments, the annealing process is followed by a cooling process at a first cooling rate.

[0013] In some embodiments, the hydrogen implantation process and the annealing process include at least: a first hydrogen implantation process and a first annealing process; a second hydrogen implantation process and a second annealing process; at least one of the first hydrogen implantation process or the second hydrogen implantation process includes a continuous first hydrogen implantation process, a second hydrogen implantation process, and a third hydrogen implantation process.

[0014] According to some embodiments of this disclosure, another aspect of this disclosure provides an integrated gate-commutated thyristor prepared using the preparation method of the above embodiments, comprising: a substrate; a hydrogen buffer layer, wherein the hydrogen buffer layer is located on the substrate.

[0015] In some embodiments, the equivalent hydrogen-related donor concentration of the hydrogen buffer layer is 1 × 10⁻⁶. 14 cm -3 ~1×10 17 cm -3 The thickness ranges from 10μm to 80μm.

[0016] The technical solutions provided in this disclosure have at least the following advantages: The method for fabricating an integrated gate-commutated thyristor provided in this disclosure involves performing a hydrogen implantation process on an initial buffer layer to obtain a buffer layer precursor. The hydrogen implantation process includes at least a first hydrogen implantation process, a second hydrogen implantation process, and a third hydrogen implantation process. The first energy of the first hydrogen implantation process, the second energy of the second hydrogen implantation process, and the third energy of the third hydrogen implantation process are different; and / or, the first dose of the first hydrogen implantation process, the second dose of the second hydrogen implantation process, and the third dose of the third hydrogen implantation process are different. Through multiple hydrogen implantation processes with different energies or doses, the device can significantly shorten the tail current, suppress V_peak (peak voltage), and improve the repetitive turn-off capability and improve E_off (turn-off energy loss) / EMI (electromagnetic interference) without reducing the withstand voltage, thereby exhibiting better turn-off softening and overshoot suppression.

[0017] By annealing the buffer layer precursor of the hydrogen implantation process at a temperature range of 350℃ to 500℃ (excluding the endpoints), hydrogen ions can diffuse more slowly within the hydrogen buffer layer, thereby obtaining a wide and gentle doping gradient. Attached Figure Description

[0018] One or more embodiments are illustrated by way of example with corresponding pictures in the accompanying drawings. These illustrations do not constitute a limitation on the embodiments. Unless otherwise stated, the pictures in the accompanying drawings do not constitute a limitation on scale. In order to more clearly illustrate the technical solutions in the embodiments of this disclosure or the conventional technology, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1A flowchart illustrating a method for fabricating an integrated gate-commutated thyristor according to an embodiment of this disclosure; Figure 2 Another flowchart of a method for fabricating an integrated gate-commutated thyristor provided in an embodiment of this disclosure; Figure 3 This is a schematic diagram of an integrated gate-commutated thyristor provided in one embodiment of the present disclosure. Detailed Implementation

[0020] As can be seen from the background technology, current hydrogen buffer layers have contradictions in terms of shutdown softening, overshoot control, process window and high temperature stability.

[0021] This disclosure provides a method for fabricating an integrated gate-commutated thyristor. By implanting hydrogen ions with multiple energy levels and doses and annealing and activating them in the range of 400–440°C, an n-type equivalent profile is formed, which is a relatively uniform hydrogen buffer layer. This achieves a reduction in V_peak, a decrease in turn-off oscillation and EMI risk, and a balance between withstand voltage and loss.

[0022] It should be noted that the terminology used herein is for the purpose of describing particular implementations only and is not intended to limit the exemplary implementations according to embodiments of this disclosure. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0023] Unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps set forth in these embodiments do not limit the scope of this disclosure. It should also be understood that, for ease of description, the dimensions of the various parts shown in the drawings are not drawn to actual scale. Techniques, methods, and devices known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and devices should be considered part of the specification. In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters in the following drawings denote similar items; therefore, once an item is defined in one drawing, it need not be further discussed in subsequent drawings.

[0024] In the description of the embodiments of this disclosure, it should be understood that the orientation or positional relationship indicated by directional terms such as "front, back, up, down, left, right", "horizontal, vertical, horizontal" and "top, bottom" is generally based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing this disclosure and simplifying the description. Unless otherwise stated, these directional terms do not indicate or imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the scope of protection of the embodiments of this disclosure; the directional terms "inner" and "outer" refer to the inner and outer contours relative to the outline of each component itself.

[0025] For ease of description, spatial relative terms such as "above," "on top of," "on the upper surface of," "above," etc., are used herein to describe the spatial positional relationship of a device or feature as shown in the figures to other devices or features. It should be understood that spatial relative terms are intended to encompass different orientations in use or operation beyond the orientation of the device as described in the figures. For example, if the device in the figures were inverted, a device described as "above" or "on top of" other devices or structures would subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein will be interpreted accordingly.

[0026] Furthermore, it should be noted that the use of terms such as "first" and "second" to define components is merely for the purpose of distinguishing the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore should not be construed as limiting the scope of protection of this disclosure.

[0027] The embodiments of this disclosure will now be described in detail with reference to the accompanying drawings. However, those skilled in the art will understand that many technical details have been provided in the embodiments of this disclosure to facilitate a better understanding of the disclosure. However, the technical solutions claimed in this disclosure can be implemented even without these technical details and various variations and modifications based on the following embodiments.

[0028] According to some embodiments of this disclosure, one aspect of this disclosure provides a method for fabricating an integrated gate-commutated thyristor. (See reference...) Figure 1The preparation method includes: providing a substrate; forming an initial buffer layer located on the substrate; performing a hydrogen implantation process on the initial buffer layer to obtain a buffer layer precursor, wherein the hydrogen implantation process includes at least a first hydrogen implantation process, a second hydrogen implantation process, and a third hydrogen implantation process, wherein the first energy of the first hydrogen implantation process, the second energy of the second hydrogen implantation process, and the third energy of the third hydrogen implantation process are different; and / or, the first dose of the first hydrogen implantation process, the second dose of the second hydrogen implantation process, and the third dose of the third hydrogen implantation process are different; and performing an annealing process on the buffer layer precursor to obtain a hydrogen buffer layer, wherein the annealing process has a temperature range of 350℃ to 500℃, excluding endpoint values.

[0029] The method for fabricating an integrated gate-commutated thyristor provided in this disclosure involves performing a hydrogen implantation process on an initial buffer layer to obtain a buffer layer precursor. The hydrogen implantation process includes at least a first hydrogen implantation process, a second hydrogen implantation process, and a third hydrogen implantation process. The first energy of the first hydrogen implantation process, the second energy of the second hydrogen implantation process, and the third energy of the third hydrogen implantation process are different; and / or, the first dose of the first hydrogen implantation process, the second dose of the second hydrogen implantation process, and the third dose of the third hydrogen implantation process are different. Through multiple hydrogen implantation processes with different energies or doses, the device can significantly shorten the tail current, suppress V_peak (peak voltage), and improve the repetitive turn-off capability and improve E_off (turn-off loss energy) / EMI without reducing the withstand voltage, thereby exhibiting better turn-off softening and overshoot suppression.

[0030] By annealing the buffer layer precursor of the hydrogen implantation process at a temperature range of 350℃ to 500℃ (excluding the endpoints), hydrogen ions can diffuse more slowly within the hydrogen buffer layer, thereby obtaining a wide and gentle doping gradient.

[0031] The following will describe in detail the fabrication method of the integrated gate-commutated thyristor provided above, with reference to the specific accompanying drawings and embodiments.

[0032] refer to Figure 3 The substrate has a first type of doping.

[0033] In some embodiments, the substrate may include a first p-base region 5 and a second p-base region 6. The substrate has a first surface and a second surface. A cathode emission region 1 is formed on the first surface of the substrate, and gate electrodes, a first gate electrode 3 and a second gate electrode 4, are disposed on the substrate on both sides of the cathode emission region 1. A cathode 2 is disposed on the surface of the cathode emission region 1. An n-type cathode is formed on the second surface of the substrate. - Drift zone 7.

[0034] In some embodiments, the substrate serves as the anode region, which is located at the top of the device as the main channel for current injection. The substrate material can be any of silicon, silicon carbide, gallium nitride, diamond, gallium arsenide, aluminum gallium arsenide, zinc oxide, and aluminum gallium nitride.

[0035] In some embodiments, n - Drift region 7 serves as the N-type base region, which is a crucial area for the IGCT to withstand high reverse voltage. - Drift region 7 is used to withstand reverse voltage when the device is in the off state.

[0036] The first gate 3 and the second gate 4 are coaxially led out and form a low-inductance circuit with the surrounding integrated commutation conductor. The material of either the first gate 3 or the second gate 4 can be any one of aluminum, titanium, tungsten, and molybdenum, or an alloy of the above metals.

[0037] Continue to refer to Figure 3 , in n - The initial buffer layer is formed on the side of the drift zone 7 away from the substrate.

[0038] Continue to refer to Figure 3 The initial buffer layer is subjected to a hydrogen implantation process to obtain a buffer layer precursor. The hydrogen implantation process includes at least a first hydrogen implantation process, a second hydrogen implantation process, and a third hydrogen implantation process, wherein the first energy of the first hydrogen implantation process, the second energy of the second hydrogen implantation process, and the third energy of the third hydrogen implantation process are different; and / or, the first dose of the first hydrogen implantation process, the second dose of the second hydrogen implantation process, and the third dose of the third hydrogen implantation process are different. By performing multiple hydrogen implantation processes with different energies or doses, the device can significantly shorten the tail current, suppress V_peak (peak voltage), and improve the repetitive turn-off capability and improve E_off (turn-off energy loss) / EMI (electromagnetic interference) without reducing the breakdown voltage, thereby exhibiting better turn-off softening and overshoot suppression.

[0039] In some embodiments, the first energy of the first hydrogen implantation process, the second energy of the second hydrogen implantation process, and the third energy of the third hydrogen implantation process are adjusted so that the first energy, the second energy, and the third energy are all different. By varying the energy, the depth to which hydrogen ions are implanted varies, thereby forming a wider and more uniform hydrogen concentration layer within the initial buffer layer.

[0040] In some embodiments, the first dose of the first hydrogen implantation process, the second dose of the second hydrogen implantation process, and the third dose of the third hydrogen implantation process are adjusted to be different, so that the first dose, the second dose, and the third dose are all different. By varying the doses, the concentration of hydrogen ions in different regions is made different during implantation, thereby allowing the initial buffer layer to have hydrogen concentration layers with different gradients without affecting the pressure resistance of the initial buffer layer.

[0041] In some embodiments, the first energy and first dose of the first hydrogen implantation process, the second energy and second dose of the second hydrogen implantation process, and the third energy and second dose of the third hydrogen implantation process are simultaneously adjusted so that the first energy, second energy, and third energy are all different, and the first dose, second dose, and third dose are all different. By varying the dose and energy, the concentration and depth of hydrogen ions in different regions are made different during implantation, thereby enabling the initial buffer layer to have hydrogen concentration layers with different gradients and relatively uniform gradients in different regions without affecting the pressure resistance of the initial buffer layer.

[0042] In some embodiments, the first energy and first dose of the first hydrogen injection process, the second energy and second dose of the second hydrogen injection process, and the third energy and second dose of the third hydrogen injection process are adjusted simultaneously, wherein the first energy of the first hydrogen injection process, the second energy of the second hydrogen injection process, and the third energy of the third hydrogen injection process are different; at least two of the first dose of the first hydrogen injection process, the second dose of the second hydrogen injection process, and the third dose of the third hydrogen injection process are the same. Multiple injections are performed without changing the process parameters or by changing the hydrogen injection process parameters in one of the injections to reduce the impact on the pressure resistance of the initial buffer layer.

[0043] In some embodiments, the first energy and first dose of the first hydrogen injection process, the second energy and second dose of the second hydrogen injection process, and the third energy and second dose of the third hydrogen injection process are simultaneously adjusted, wherein at least two of the first energy, the second energy, and the third energy are the same; and the first dose, the second dose, and the third dose are different. Multiple injections are performed without changing the process parameters or by changing the hydrogen injection process parameters in one of the injections to reduce the impact on the pressure resistance of the initial buffer layer.

[0044] In some embodiments, at least one of the first energy, the second energy, and the third energy ranges from 0.1 keV to 1000 keV. Performing hydrogen ion implantation within this range can combine manufacturing productivity with device static / dynamic performance, and can achieve predetermined peak positions and broadening (e.g., 30 μm to 100 μm), even though hydrogen ions can have high activity within this range.

[0045] Similarly, the range of at least one of the first, second, and third doses is 10. 11 cm -2 ~10 16 cm -2 Within this range, hydrogen ion implantation can combine manufacturing capacity with device static / dynamic performance, and can achieve predetermined peak positions and broadening (e.g., 30μm~100μm), even though hydrogen ions can have high activity within this range.

[0046] The predetermined peak position and broadening can be 30μm, 40μm, 50μm, 60μm, 70μm, 80μm, 90μm or 100μm.

[0047] Furthermore, the injection energy determines the peak position. After annealing, there is a tendency for peak position to migrate towards the surface and decrease. Therefore, a "process shrinkage margin" needs to be allowed in the dose / energy to offset redistribution. For example, the "process shrinkage margin" can be set to 2 keV or 10 keV. 5 cm -2 .

[0048] In some embodiments, the number of hydrogen injection processes ranges from 3 to 6. Multiple hydrogen injection processes are performed by adjusting the number of injections to obtain a wider range of hydrogen concentrations. The number of hydrogen injection processes can be 3, 4, 5, or 6.

[0049] In some embodiments, by annealing the buffer layer precursor of the hydrogen implantation process at a temperature range of 350°C to 500°C (excluding the endpoints), that is, by annealing at a relatively low temperature, hydrogen ions can diffuse more slowly within the hydrogen buffer layer, thereby obtaining a wide and gentle doping gradient.

[0050] In some embodiments, the process temperature range is 400°C to 440°C, within which the hydrogen-related donors remain stable, while higher temperatures will lead to donor deactivation and a decrease in concentration. The process temperature can be 400°C, 410°C, 420°C, 430°C, or 440°C.

[0051] In some embodiments, the process parameters of the annealing process include: the annealing atmosphere is nitrogen or argon, and the annealing time ranges from 10 min to 120 min.

[0052] In some embodiments, the annealing process is followed by a cooling process at a first cooling rate.

[0053] In some embodiments, reference Figure 2The hydrogen implantation process and annealing process include at least: a first-stage hydrogen implantation process and a first-stage annealing process; a second-stage hydrogen implantation process and a second-stage annealing process; and at least one of the first-stage or second-stage hydrogen implantation process includes a continuous first-stage hydrogen implantation process, a second-stage hydrogen implantation process, and a third-stage hydrogen implantation process. (Close to n) - A lower equivalent concentration is set on the drift region side to reduce the on-state voltage drop, while a higher equivalent concentration is set near the anode side to improve recombination and electric field shaping during the off-state.

[0054] Continue to refer to Figure 3 An anode emission region 9 is formed on the surface of the hydrogen buffer layer 8.

[0055] The preparation method includes: optionally introducing a diffusion barrier / trap stabilization layer at the interface between the anode emission region 9 and the hydrogen buffer layer 8 to suppress high-temperature hydrogen migration and deactivation.

[0056] The fabrication method includes: employing multiple field-limiting rings, field plates, and beveled terminations around the chip periphery; and combining inorganic / organic passivation layers on the surface to improve edge withstand voltage. The package is a top-and-bottom pressure contact type, with coaxial insulated gate outlets and built-in thermal path reinforcement to reduce junction-to-case thermal resistance.

[0057] A locally enhanced composite zone (with a higher hydrogen equivalent concentration) can be arranged below the unit to suppress hot spots; the terminal adopts a combination of multi-rings and field plates to improve edge pressure resistance and uniformity.

[0058] Through relevant performance tests, it was found that multiple injections, compared to single injections, exhibited lower V_peak and more robust turn-off at higher V_CE test voltages (such as comparison scenarios at 500V~650V levels), and were less prone to overvoltage failure. Although single injections improved BV / E_on, they significantly increased E_off and V_peak, and the reverse leakage current increased more significantly at high temperatures. Therefore, the solution should be selected in conjunction with the EMI and thermal design requirements of the application.

[0059] The method for fabricating an integrated gate-commutated thyristor provided in this disclosure involves performing a hydrogen implantation process on an initial buffer layer to obtain a buffer layer precursor. The hydrogen implantation process includes at least a first hydrogen implantation process, a second hydrogen implantation process, and a third hydrogen implantation process. The first energy of the first hydrogen implantation process, the second energy of the second hydrogen implantation process, and the third energy of the third hydrogen implantation process are different; and / or, the first dose of the first hydrogen implantation process, the second dose of the second hydrogen implantation process, and the third dose of the third hydrogen implantation process are different. Through multiple hydrogen implantation processes with different energies or doses, the device can significantly shorten the tail current, suppress V_peak (peak voltage), and improve the repetitive turn-off capability and improve E_off (turn-off loss energy) / EMI without reducing the withstand voltage, thereby exhibiting better turn-off softening and overshoot suppression.

[0060] By annealing the buffer layer precursor of the hydrogen implantation process at a temperature range of 350℃ to 500℃ (excluding the endpoints), hydrogen ions can diffuse more slowly within the hydrogen buffer layer, thereby obtaining a wide and gentle doping gradient.

[0061] Accordingly, according to some embodiments of this disclosure, another aspect of this disclosure also provides an integrated gate-commutated thyristor prepared using the preparation method of the above embodiments, which has the same or corresponding technical features as the above embodiments, and will not be described in detail here.

[0062] refer to Figure 3 The integrated gate-commutated thyristor includes: a substrate; and a hydrogen buffer layer 8, which is located on the substrate.

[0063] The substrate can be a first p-based region 5 and a second p-based region 6. The substrate has a first surface and a second surface. A cathode emission region 1 is formed on the first surface of the substrate. Gate electrodes, a first gate electrode 3 and a second gate electrode 4, are disposed on the substrate on both sides of the cathode emission region 1. A cathode 2 is disposed on the surface of the cathode emission region 1. The second surface of the substrate has n... - Drift zone 7.

[0064] In some embodiments, the hydrogen buffer layer 8 is an n-type equivalent doped layer formed by hydrogen doping and thermal activation, having a designable doping distribution along the device thickness direction. This layer is used to increase the carrier recombination rate, shape the electric field, and shorten the tail current during turn-off, while suppressing the rise in on-state voltage drop during turn-on. Specifically, refer to the hydrogen buffer layer obtained through hydrogen implantation and annealing processes described above.

[0065] In some embodiments, the equivalent hydrogen-related donor concentration of the hydrogen buffer layer 8 is 1 × 10⁻⁶. 14 cm -3 ~1×10 17 cm -3 The thickness ranges from 10μm to 80μm.

[0066] In some embodiments, the doping distribution of the hydrogen buffer layer 8 is uniform or near-uniform.

[0067] In some embodiments, the doping distribution of the hydrogen buffer layer 8 is a gradient distribution, and close to n － The equivalent concentration on the drift region 7 side is lower than the equivalent concentration on the side closer to the anode emission region 9. For example, the hydrogen buffer layer 8 is divided into two or more functional regions, where the first functional region faces n. － The drift region has a lower equivalent concentration to reduce conduction losses, while the second functional region faces the anode emitter region and has a higher equivalent concentration to enhance recombination and electric field shaping during the turn-off period.

[0068] It should be noted that equivalent concentration refers to the content of doping elements in a crystal under equivalent equilibrium.

[0069] In some embodiments, the anode emitter region 9 includes an anode short-circuit (AS) structure or a selective composite structure, which works in conjunction with the hydrogen buffer layer to balance on-state voltage drop and turn-off softness.

[0070] In some embodiments, a diffusion barrier layer and / or a trap stabilization structure are provided between the hydrogen buffer layer 8 and the anode emission region 9 to suppress hydrogen migration and deactivation under high temperature conditions.

[0071] In some embodiments, a local high-hydrogen region is formed at the hydrogen buffer layer position corresponding to the cathode / gate unit to achieve unit-level current sharing and hot spot suppression. For example, the region where the cathode 2, the first gate 3, and the second gate 4 are projected vertically onto the hydrogen buffer layer 8.

[0072] Those skilled in the art will understand that the above embodiments are specific examples of implementing this disclosure, and in practical applications, various changes in form and detail may be made without departing from the spirit and scope of this disclosure. Any person skilled in the art can make their own modifications and alterations without departing from the spirit and scope of this disclosure; therefore, the scope of protection of this disclosure should be determined by the scope defined in the claims.

Claims

1. A method of manufacturing an integrated gate-commutated thyristor, characterized by, include: Provide a base; An initial buffer layer is formed on the substrate; The initial buffer layer is subjected to a hydrogen implantation process to obtain a buffer layer precursor. The hydrogen implantation process includes at least a first hydrogen implantation process, a second hydrogen implantation process, and a third hydrogen implantation process, wherein the first energy of the first hydrogen implantation process, the second energy of the second hydrogen implantation process, and the third energy of the third hydrogen implantation process are different; and / or, the first dose of the first hydrogen implantation process, the second dose of the second hydrogen implantation process, and the third dose of the third hydrogen implantation process are different. The buffer layer precursor is annealed to obtain a hydrogen buffer layer. The annealing temperature range is 350℃~500℃, excluding the endpoint values.

2. The manufacturing method of an integrated gate-commutated thyristor according to claim 1, characterized by, The first energy, the second energy, and at least one of the third energy range from 0.1 keV to 1000 keV.

3. The manufacturing method of an integrated gate-commutated thyristor according to claim 2, characterized in that, The number of hydrogen injection processes ranges from 3 to 6.

4. The manufacturing method of an integrated gate-commutated thyristor according to claim 1, characterized by, The first energy of the first hydrogen injection process, the second energy of the second hydrogen injection process, and the third energy of the third hydrogen injection process are different; at least two of the first dose of the first hydrogen injection process, the second dose of the second hydrogen injection process, and the third dose of the third hydrogen injection process are the same.

5. The manufacturing method of an integrated gate-commutated thyristor according to claim 1, characterized by, The first energy of the first hydrogen injection process, the second energy of the second hydrogen injection process, and the third energy of the third hydrogen injection process are at least the same; the first dose of the first hydrogen injection process, the second dose of the second hydrogen injection process, and the third dose of the third hydrogen injection process are not the same.

6. The manufacturing method of an integrated gate-commutated thyristor according to claim 1, characterized by, The process parameters of the annealing process include: the annealing atmosphere is nitrogen or argon, and the annealing time ranges from 10 min to 120 min.

7. The manufacturing method of an integrated gate-commutated thyristor according to claim 6, characterized in that, The annealing process is followed by a cooling process at a first cooling rate.

8. The manufacturing method of an integrated gate-commutated thyristor according to claim 1, characterized by, The hydrogen injection process and the annealing process include at least: a first hydrogen injection process and a first annealing process; a second hydrogen injection process and a second annealing process; at least one of the first hydrogen injection process or the second hydrogen injection process includes a continuous first hydrogen injection process, a second hydrogen injection process and a third hydrogen injection process.

9. An integrated gate-commutated thyristor produced by the production method of any one of claims 1 to 8, characterized by include: Base; A hydrogen buffer layer is located on the substrate.

10. The integrated gate-commutated thyristor of claim 9, characterized in that The equivalent hydrogen-related donor concentration of the hydrogen buffer layer is 1 x 10 14 cm -3 ~ 1 x 10 17 cm -3 , and the thickness is 10 μm ~ 80 μm.

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