Preheating ring, lining structure and semiconductor equipment

Abstract

The invention provides a preheating ring, a lining structure and semiconductor equipment. The pre-heat ring is applied to a semiconductor device including a liner structure. An annular preheating ring containing groove with an upward opening is formed in the lining structure. A first positioning part is formed on the radial outer edge of the preheating ring containing groove, and a second positioning part is formed on the radial inner edge of the preheating ring containing groove. The preheating ring comprises a first ring part and a second ring part formed by protruding downwards from the radial periphery of the first ring part. At the first temperature, a gap is formed between the radial inner side face of the second ring part and the radial outer side face of the second positioning part, and the radial outer side face of the preheating ring makes contact with the first positioning part so as to position the preheating ring. And at a second temperature lower than the first temperature, a gap is formed between the radial outer side face of the preheating ring and the first positioning part, and the radial inner side face of the second ring part makes contact with the radial outer side face of the second positioning part so as to position the preheating ring.

Description

Technical Field

[0001] This application relates to the field of semiconductor equipment technology, specifically to a preheating ring, an inner liner structure, and a semiconductor device. Background Technology

[0002] Semiconductor equipment typically includes a pre-heat-ring (PHR) and a liner structure to house the PHR. Taking epitaxy as an example, epitaxy (EPI) is a semiconductor manufacturing technique used to grow one or more single-crystal films of controllable thickness and material on a single-crystal substrate (such as a silicon wafer). The crystal structure of this single-crystal film can be identical to that of the substrate. The key to epitaxy processes lies in controlling the high-temperature heating and the uniformity of the gas flow field. Typically, during the heating phase of the epitaxy process, the substrate needs to be heated to approximately 1000 degrees Celsius to allow the reactive gases to undergo vapor-phase epitaxial growth on the substrate.

[0003] Due to the edge effect of the substrate, the gas flow rate is faster and the heat dissipation capacity is stronger in the edge region of the substrate. The temperature in the edge region of the substrate is lower than that in the center region of the substrate (the temperature difference can reach tens of degrees Celsius). The non-uniformity of gas flow rate and temperature will lead to poor quality of epitaxially grown film (e.g., uneven thickness).

[0004] To address the aforementioned issues, epitaxial processing equipment can incorporate a preheating ring radially outside the substrate. The substrate is typically placed at the center of a pedestal. As gas flows through the gap between the pedestal and the preheating ring, the ring heats the gas and provides temperature compensation at the substrate's edge, reducing the temperature difference between the edge and center regions. Simultaneously, the preheating ring promotes laminar flow formation and reduces eddies at the substrate edges, thereby improving the uniformity of the reactive gas flow field. By improving temperature and gas flow uniformity near the substrate, the preheating ring effectively enhances the film quality of wafer products.

[0005] The concentricity of the preheating ring and the substrate affects the uniformity of substrate temperature, thus impacting semiconductor processing quality. For example, poor concentricity between the preheating ring and the substrate will result in higher temperatures at locations closer to the preheating ring on the substrate edge compared to locations farther from the preheating ring, leading to poor substrate temperature uniformity. An inner liner structure can be provided at the radial outer edge of the substrate to house the preheating ring. The concentricity between the inner liner structure and the substrate is typically good; therefore, the concentricity of the preheating ring and the inner liner structure reflects the overall concentricity of the preheating ring and the substrate, which in turn affects semiconductor processing quality.

[0006] The inventors noted that due to significant temperature variations during the epitaxial process, the preheating ring undergoes structural deformation due to thermal expansion and contraction. During one or more deformations, the preheating ring will shift relative to the inner liner structure, making it difficult for it to maintain concentricity. This leads to a decrease in the concentricity between the preheating ring and the substrate. This reduced concentricity significantly diminishes the aforementioned improvement effect of the preheating ring, potentially affecting process parameters such as doping concentration, epitaxial film thickness uniformity, crystal quality, and critical dimension (CD) of the final wafer product. Summary of the Invention

[0007] This application discloses a preheating ring, an inner liner structure, a self-positioning structure, and a semiconductor device to solve the problem of excessive concentricity deviation between the preheating ring and the substrate caused by deformation and displacement of the preheating ring due to temperature changes.

[0008] In a first aspect, this application provides a preheating ring applied to a semiconductor device, the semiconductor device including an inner liner structure; the inner liner structure forming an annular preheating ring receiving groove with an upward opening for receiving at least a portion of the preheating ring; a first positioning portion is formed at the radial outer edge of the preheating ring receiving groove, and a second positioning portion is formed at the radial inner edge of the preheating ring receiving groove; the preheating ring includes a first ring portion and a second ring portion formed by the downward protrusion of the radial outer edge of the first ring portion.

[0009] At a first temperature, a gap is formed between the radially inner side of the second ring portion and the radially outer side of the second positioning portion, and the radially outer side of the preheating ring contacts the first positioning portion to position the preheating ring; and at a second temperature lower than the first temperature, a gap is formed between the radially outer side of the preheating ring and the first positioning portion, and the radially inner side of the second ring portion contacts the radially outer side of the second positioning portion to position the preheating ring.

[0010] At a second temperature, such as room temperature, the radially inner surface of the second ring portion of the preheating ring contacts the radially outer surface of the second positioning portion of the liner structure, forming a limiting effect. This helps to ensure concentricity between the preheating ring and the liner structure, thus achieving centering of the preheating ring. At a first temperature higher than the second temperature, the preheating ring undergoes a slight deformation due to thermal expansion. At this time, the radially outer surface of the preheating ring can contact the inner surface of the first positioning portion, forming a limiting effect, which also helps to ensure concentricity between the preheating ring and the liner structure. The limiting effect under both temperature conditions enables the preheating ring to maintain good concentricity with the liner structure, thus achieving self-positioning and centering of the preheating ring relative to the liner structure. The positions of the liner structure and the substrate on which the wafer is placed are usually relatively fixed, and the concentricity between the liner structure and the substrate is good. Therefore, the preheating ring can also have good concentricity relative to the substrate, thereby improving the product quality of the wafer (e.g., one or more process parameters such as doping concentration, epitaxial growth film thickness, and critical dimensions).

[0011] In one possible implementation, at the second temperature, the gap between the radial outer surface of the preheating ring and the first positioning part is greater than or equal to 0.5 mm and less than or equal to 2 mm.

[0012] This technical feature provides a preferred range of values ​​for the gap between the preheating ring and the first positioning portion of the liner structure at a second temperature, within which the preheating ring and the liner structure can come into contact and form a reliable positioning when heated to the first temperature.

[0013] In one possible implementation, the first temperature is greater than or equal to 800 degrees Celsius and less than or equal to 1200 degrees Celsius; and / or the second temperature is greater than or equal to 0 degrees Celsius and less than or equal to 50 degrees Celsius.

[0014] This technical feature provides a preferred range of values ​​for the first and second temperatures, suitable for the practical application of the preheating ring 100 and the inner liner structure 200 in semiconductor equipment (especially epitaxial process equipment).

[0015] In one possible implementation, at a third temperature lower than the first temperature and higher than the second temperature, the gap between the radially inner side of the second ring and the radially outer side of the second positioning part is greater than 0 mm and less than or equal to 2 mm, and a gap is formed between the radially outer side of the preheating ring and the first positioning part.

[0016] At a third temperature, such as another high-temperature environment for forming an epitaxial growth film, the gap between the preheating ring and the inner liner structure is smaller, which allows the preheating ring and the inner liner structure to maintain a good degree of concentricity.

[0017] In one possible implementation, at the third temperature, the gap between the radially inner side of the second ring and the radially outer side of the second positioning part is greater than or equal to 0.7 mm and less than or equal to 1.5 mm.

[0018] This technical feature further specifies the preferred gap range between the preheating ring and the lining structure.

[0019] In one possible implementation, the third temperature is greater than or equal to 400 degrees Celsius and less than or equal to 700 degrees Celsius.

[0020] This technical feature provides a preferred range of values ​​for the third temperature. The first and second temperatures can be applied to two different film processing conditions, enabling the semiconductor equipment containing the preheating ring to adapt to various processing requirements.

[0021] In one possible implementation, a plurality of first protrusions are formed on the radially inner surface of the second ring portion, the plurality of first protrusions including an inner protrusion protruding radially inward and / or an outer protrusion protruding radially outward, and at the second temperature, the radially inner surface of the second ring portion contacts the radially outer surface of the second positioning portion via the plurality of first protrusions.

[0022] The first protrusion on the second ring contacts the second positioning part, resulting in a smaller contact area between the second ring and the second positioning part. This helps reduce particle problems caused by friction between the contact surfaces of the second ring and the second positioning part due to the expansion of the preheating ring. Furthermore, considering that the preheating ring can be installed at a second temperature, the smaller contact area also facilitates smooth installation.

[0023] In one possible implementation, the plurality of first protrusions are evenly distributed along the radial inner surface of the second ring.

[0024] The uniform distribution of multiple first protrusions can improve the positioning effect of the preheating ring and further enhance the concentricity between the preheating ring and the wafer.

[0025] In one possible implementation, the number of the first protrusions is 3 to 12.

[0026] This technical feature provides a preferred range of the number of first protrusions. A number greater than or equal to 3 is beneficial to ensure centering, while a number less than or equal to 12 is beneficial to reduce processing difficulty. Therefore, within this range, both positioning effect and processing ease are taken into account.

[0027] In one possible implementation, the arithmetic mean deviation of the radial inner circumferential surface of the first protrusion is greater than or equal to 0.04 micrometers and less than or equal to 0.2 micrometers.

[0028] A preferred range of roughness for the first protrusion is provided, within which the preheating ring and the inner liner structure are less likely to generate particulate matter due to friction, further improving the quality of semiconductor products. Furthermore, setting the roughness of only the contact surface, rather than the entire surface, at a higher level can reduce the processing difficulty of the structure.

[0029] In one possible implementation, the preheating ring is formed with a ring opening that extends radially and passes through the first ring portion and the second ring portion.

[0030] The opening in the ring can, on the one hand, cooperate with the positioning blocks on the inner liner structure to restrict the movement of the preheating ring within the preheating ring receiving groove (especially the circumferential movement), thereby reducing or avoiding particle problems caused by friction from the relative circumferential movement of the preheating ring and the inner liner structure, and improving processing quality. On the other hand, the opening in the ring can also reduce the internal stress of the preheating ring when it deforms due to temperature, avoiding uneven deformation of the preheating ring. In addition, an airflow channel can be formed at the opening in the ring, creating a relatively special airflow distribution in and around the opening. This airflow distribution can cooperate with the internal structure of the semiconductor device cavity (other structures inside the semiconductor device will also affect the airflow distribution), making the overall airflow distribution more uniform.

[0031] Secondly, this application provides a liner structure applied to a semiconductor device, the semiconductor device including a preheating ring; the liner structure forms an annular preheating ring receiving groove with an upward opening for receiving at least a portion of the preheating ring, the radial outer edge of the preheating ring receiving groove forming a first positioning portion, and the radial inner edge of the preheating ring receiving groove forming a second positioning portion; the preheating ring includes a first ring portion and a second ring portion formed by the radial outer edge of the first ring portion protruding downward.

[0032] At a first temperature, a gap is formed between the radially outer surface of the second positioning part and the radially inner surface of the second ring part, and the first positioning part contacts the radially outer surface of the preheating ring to position the preheating ring; at a second temperature lower than the first temperature, a gap is formed between the first positioning part and the radially outer surface of the preheating ring, and the radially outer surface of the second positioning part contacts the radially inner surface of the second ring part to position the preheating ring.

[0033] At a second temperature, such as room temperature, the radially inner surface of the second ring portion of the preheating ring contacts the radially outer surface of the second positioning portion of the liner structure to form a limiting position, which helps to ensure that the preheating ring and the liner structure are concentric, thus achieving centering of the preheating ring. At a first temperature higher than the second temperature, the preheating ring undergoes a slight deformation due to thermal expansion. At this time, the radially outer surface of the preheating ring can contact the inner surface of the first positioning portion to form a limiting position, which helps to ensure that the preheating ring is centered. The limiting position under both temperature conditions enables the preheating ring to maintain good concentricity with the liner structure, that is, to achieve self-positioning and centering of the preheating ring relative to the liner structure. Since the position of the liner structure and the substrate on which the wafer is placed is relatively fixed (i.e., the concentricity of the liner structure and the substrate is good), the preheating ring can also have good concentricity relative to the substrate, thereby improving the product quality of the wafer product (e.g., one or more of the process parameters such as doping concentration, epitaxial growth film thickness, and critical dimensions).

[0034] In one possible implementation, at the second temperature, the gap between the first positioning part and the radial outer surface of the preheating ring is greater than or equal to 0.5 mm and less than or equal to 2 mm.

[0035] This technical feature provides a preferred range of values ​​for the gap between the preheating ring and the first positioning portion of the liner structure at a second temperature, within which the preheating ring and the liner structure can come into contact and form a reliable positioning when heated to the first temperature.

[0036] In one possible implementation, the first temperature is greater than or equal to 800 degrees Celsius and less than or equal to 1200 degrees Celsius; and / or the second temperature is greater than or equal to 0 degrees Celsius and less than or equal to 50 degrees Celsius.

[0037] This technical feature provides a preferred range of values ​​for the first and second temperatures, suitable for the practical application of the preheating ring 100 and the inner liner structure 200 in semiconductor equipment (especially epitaxial process equipment).

[0038] In one possible implementation, at a third temperature lower than the first temperature and higher than the second temperature, the gap between the radially outer side of the second positioning part and the radially inner side of the second ring part is greater than 0 mm and less than or equal to 2 mm, and a gap is formed between the first positioning part and the radially outer side of the preheating ring.

[0039] At a third temperature, such as another high-temperature environment for forming an epitaxial growth film, the gap between the preheating ring and the inner liner structure is smaller, which allows the preheating ring and the inner liner structure to maintain a good degree of concentricity.

[0040] In one possible implementation, at the third temperature, the gap between the radially outer side of the second positioning portion and the radially inner side of the second ring portion is greater than or equal to 0.7 mm and less than or equal to 1.5 mm.

[0041] This technical feature further specifies the preferred gap range between the preheating ring and the lining structure.

[0042] In one possible implementation, the third temperature is greater than or equal to 400 degrees Celsius and less than or equal to 700 degrees Celsius.

[0043] This technical feature provides a preferred range of values ​​for the third temperature. The first and second temperatures are applicable to two different film processing conditions, enabling the semiconductor equipment containing the preheating ring to adapt to various processing requirements.

[0044] In one possible implementation, the second positioning portion includes a plurality of second protrusions disposed along the radial inner edge of the preheating ring receiving groove, the plurality of second protrusions including an inner protrusion protruding radially inward and / or an outer protrusion protruding radially outward, the plurality of second protrusions contacting the radial inner side of the second ring portion at the second temperature.

[0045] By using multiple second protrusions on the second positioning part of the inner lining structure to contact the preheating ring, the contact area between the second positioning part and the preheating ring is reduced, thus decreasing the surface area where friction may occur. This mitigates the problem of particles generated due to friction between the contact surface of the second ring and the second positioning part caused by the deformation and displacement of the preheating ring. Furthermore, considering that the preheating ring can be installed at a second temperature, the smaller contact area also facilitates smooth installation.

[0046] In one possible implementation, the plurality of second protrusions are evenly distributed along the radial inner edge of the preheating ring receiving groove.

[0047] The even distribution of multiple second protrusions can improve the positioning effect of the preheating ring and further enhance the concentricity between the preheating ring and the wafer.

[0048] In one possible implementation, the number of the second protrusions is 3 to 12.

[0049] This technical feature provides a range of the number of second protrusions in some embodiments. A number greater than or equal to 3 is beneficial to ensure centering, while a number less than 12 is beneficial to reduce processing difficulty. Therefore, the above range of numbers can take into account both the positioning effect and processing convenience of the second protrusions.

[0050] In one possible implementation, a positioning block is provided in the preheating ring receiving groove of the liner structure for engaging with a ring opening that extends radially through the preheating ring, thereby restricting the movement of the preheating ring within the preheating ring receiving groove.

[0051] The engagement of the positioning block with the opening of the preheating ring can restrict the movement of the preheating ring, especially restricting the circumferential movement of the preheating ring, thereby reducing or avoiding particle problems caused by the relative circumferential friction between the preheating ring and the inner lining structure.

[0052] Thirdly, this application provides a self-positioning structure applied to a semiconductor device, comprising: a preheating ring and an inner liner structure, both the preheating ring and the inner liner structure being applied to the semiconductor device; the inner liner structure forming an annular preheating ring receiving groove with an upward opening for accommodating at least a portion of the preheating ring; a first positioning portion being formed at the radial outer edge of the preheating ring receiving groove, and a second positioning portion being formed at the radial inner edge of the preheating ring receiving groove; the preheating ring including a first ring portion and a second ring portion formed by the downward protrusion of the radial outer edge of the first ring portion.

[0053] At a first temperature, a gap is formed between the radially inner side of the second ring and the radially outer side of the second positioning part, and the radially outer side of the preheating ring contacts the first positioning part to position the preheating ring. At a second temperature lower than the first temperature, a gap is formed between the radially outer side of the preheating ring and the first positioning part, and the radially inner side of the second ring contacts the radially outer side of the second positioning part to position the preheating ring.

[0054] At a second temperature, such as room temperature, the radially inner surface of the second ring portion of the preheating ring contacts the radially outer surface of the second positioning portion of the liner structure, forming a limiting effect. This helps to ensure concentricity between the preheating ring and the liner structure, thus centering the preheating ring. At a first temperature higher than the second temperature, the preheating ring undergoes a slight deformation due to thermal expansion. At this temperature, the radially outer surface of the preheating ring can contact the inner surface of the first positioning portion, forming a limiting effect, which also helps to center the preheating ring. The limiting effect under both temperature conditions allows the preheating ring and the liner structure to maintain good concentricity, that is, to achieve self-centering of the preheating ring relative to the liner structure. Since the position of the liner structure relative to the substrate on which the wafer is placed is relatively fixed, and the concentricity between the liner structure and the substrate is good, the preheating ring can also have good concentricity relative to the substrate, thereby improving the product quality of the wafer (e.g., one or more process parameters such as doping concentration, epitaxial growth film thickness, and critical dimensions).

[0055] In one possible implementation, the preheating ring is any of the preheating rings mentioned above.

[0056] In one possible implementation, the lining structure is any of the lining structures described above.

[0057] The preheating ring and inner lining structure in this self-positioning structure can each be selected from the relevant specific structures mentioned above, and the various features of the aforementioned preheating ring / inner lining structure can be combined according to actual needs to provide a rich selection of self-positioning structure options.

[0058] Fourthly, this application provides a semiconductor device, including a chamber, the chamber being provided with a preheating ring as described in any of the preceding claims and / or an inner liner structure as described in any of the preceding claims.

[0059] Based on the aforementioned preheating ring and / or liner structure, this semiconductor device enables more accurate concentric positioning of the preheating ring, further enhancing its temperature compensation and airflow improvement effects. At a second temperature, such as room temperature, the radially inner surface of the second ring portion of the preheating ring contacts the radially outer surface of the second positioning portion of the liner structure, forming a limiting effect. This facilitates concentricity between the preheating ring and the liner structure, ensuring the preheating ring is centered. At a first temperature higher than the second temperature, the preheating ring undergoes a slight deformation due to thermal expansion. In this case, the radially outer surface of the preheating ring can contact the inner surface of the first positioning portion, forming a limiting effect, further facilitating centering of the preheating ring. The limiting under both temperature conditions enables the preheating ring and the inner liner structure to maintain good concentricity, that is, to achieve self-positioning and centering of the preheating ring relative to the inner liner structure. The position of the inner liner structure and the substrate on which the wafer is placed is relatively fixed, and the concentricity between the inner liner structure and the substrate is good. Therefore, the preheating ring can also have good concentricity relative to the substrate, thereby improving the product quality of wafer semiconductor products (such as one or more process parameters such as doping concentration, epitaxial growth film thickness, and critical dimensions). Attached Figure Description

[0060] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0061] Figure 1 This is a schematic diagram of the first structure of the preheating ring according to an embodiment of this application;

[0062] Figure 2 This is a cross-sectional schematic diagram of the self-positioning structure according to an embodiment of this application;

[0063] Figure 3 for Figure 2 A magnified view of a portion of the image;

[0064] Figure 4This is a first structural schematic diagram of the lining structure according to an embodiment of this application;

[0065] Figure 5 This is a partially enlarged schematic diagram of the lining structure according to an embodiment of this application;

[0066] Figure 6 This is a first structural schematic diagram of the self-positioning structure according to an embodiment of this application;

[0067] Figure 7 This is a partial structural diagram of the self-positioning structure according to an embodiment of this application;

[0068] Figure 8 This is a schematic diagram illustrating the cooperation between the preheating ring and the positioning block in an embodiment of this application.

[0069] Figure 9 for Figure 8 A magnified view of a portion of the image;

[0070] Figure 10 This is a schematic diagram of the second structure of the preheating ring according to an embodiment of this application;

[0071] Figure 11 This is a schematic diagram of the second structure of the self-positioning structure according to an embodiment of this application.

[0072] Explanation of reference numerals in the attached figures:

[0073] 100 - Preheating ring;

[0074] 110 - First Ring Section;

[0075] 120 - Second Ring Section;

[0076] 121-First convex part;

[0077] 130 - Ring opening;

[0078] 200 - Inner lining structure;

[0079] 210 - Preheating ring receiving groove;

[0080] 211-First Positioning Section;

[0081] 212 - Second positioning part;

[0082] 2121-Second convex part;

[0083] 300-base;

[0084] 400-Location Block;

[0085] 10 - First gap. Detailed Implementation

[0086] The preheating ring, inner liner structure, and self-positioning structure provided in this application can be applied to semiconductor equipment, particularly epitaxial process equipment where a preheating ring is required to improve the uniformity of epitaxial growth films. The preheating ring, inner liner structure, and self-positioning structure can be disposed radially outside the base used to place the wafer (silicon wafer), which can improve the concentricity between the preheating ring and the inner liner structure, thereby improving the quality of semiconductor products (especially wafer products).

[0087] Example 1

[0088] This embodiment provides at least one of a preheating ring and an inner liner structure, which can be applied to semiconductor devices. For example... Figure 2 and Figure 4 As shown, the liner structure 200 can be formed with an upward-opening (vertically) preheating ring receiving groove 210 for accommodating at least a portion of the preheating ring 100. The preheating ring receiving groove 210 can be an annular groove. Figure 3 and Figure 4 As shown, a first positioning part 211 can be formed on the radial outer edge of the preheating ring receiving groove 210, and a second positioning part 212 can be formed on the radial inner edge of the preheating ring receiving groove 210. Both the first positioning part 211 and the second positioning part 212 can be used to concentrically position the preheating ring 100 (the principle and process of concentric positioning will be described later).

[0089] like Figure 1 and Figure 3 As shown, the preheating ring 100 may include a first ring portion 110 and a second ring portion 120 formed by the radially outer edge of the first ring portion 110 protruding downwards. The second ring portion 120 of the preheating ring 100 may be at least partially disposed within the preheating ring receiving groove 210, that is, the ring width of the preheating ring receiving groove 210 may be greater than the ring width of the second ring portion 120. The downward protrusion height of the second ring portion 120 relative to the first ring portion 110 may be greater than or equal to the axial height of the second positioning portion 212, so that the bottom surface of the second ring portion 120 can contact the bottom of the preheating ring receiving groove 210.

[0090] In some implementations, such as Figure 3 As shown, the height of the second ring portion 120 of the preheating ring 100 protruding downward relative to the first ring portion 110 can be greater than the height of the second positioning portion 212, so that the bottom surface of the first ring portion 110 is less likely to rub against the upper surface of the second positioning portion 212, so that the bottom surface of the first ring portion 110 of the preheating ring 100 will not generate particulate contamination due to friction with the second positioning portion 212.

[0091] In some implementations, such as Figure 1 , Figure 8 and Figure 9As shown, the preheating ring 100 may also have an annular opening 130 extending radially and penetrating the first ring portion 110 and the second ring portion 120. A positioning block 400 may be provided within the preheating ring receiving groove 210 of the liner structure 200 (e.g., the bottom of the groove 210). The annular opening 130 may engage with the positioning block 400 to restrict the movement of the preheating ring 100 within the preheating ring receiving groove 210. In other words, the positioning block 400 can be engaged with the annular opening 130 for precise circumferential positioning of the preheating ring 100. The engagement of the positioning block 400 with the annular opening 130 of the preheating ring 100 enables circumferential positioning of the preheating ring, thereby reducing or avoiding particle problems caused by friction from the relative circumferential movement of the preheating ring and the liner structure.

[0092] Furthermore, the annular opening 130 can reduce the internal stress of the preheating ring due to temperature deformation, avoiding uneven deformation of the preheating ring. Additionally, an airflow channel can be formed at the annular opening 130, creating a relatively unique airflow distribution in and around the opening. This airflow distribution can be coordinated with the internal structure of the semiconductor device cavity (other structures within the semiconductor device also affect the airflow distribution; utilizing the unique airflow distribution formed at the annular opening can mitigate the adverse effects of other structures on the airflow distribution), resulting in a more uniform overall airflow distribution.

[0093] In some implementations, such as Figure 9 As shown, the positioning block 400 can be a triangular prism structure. One edge of the triangular prism structure can be set along the ring opening 130, and the side opposite to this edge can be set on the inner lining structure. The other two sides of the triangular prism can form an angle with respect to the surface of the inner lining structure 200, and the ring opening 130 can be snapped onto the edges of the two sides.

[0094] It is understood that when placing the preheating ring 100 on the liner structure, the preheating ring 100 can be inserted into the preheating ring receiving groove 210 of the liner structure 200 from the opening side, in a direction perpendicular to the surface of the liner structure 200 (similar to a hoisting installation method). In particular, when the locating block 400 is provided on the liner structure 200, the circumferential position of the preheating ring 100 also needs to be aligned, that is, the locating block 400 (e.g., the upper edge of the triangular prism locating block mentioned above) must be aligned with the ring opening 130. Under the installation environment (e.g., at room temperature), the gap between the preheating ring 100 and the preheating ring receiving groove 210 is small, and the above installation method can minimize or reduce friction between the preheating ring 100 and the liner structure to improve particle problems.

[0095] The preheating ring 100, the inner liner structure 200, and the equipment containing them can have two or more operating temperatures. Specifically, the first positioning part 211 and the second positioning part 212 can contact the preheating ring at high temperature (operating temperature) and normal temperature, respectively, to meet the self-positioning requirements of the preheating ring 100 at both operating and normal temperatures. In this application, the operating temperature of the preheating ring 100 can be used as the first temperature, and the normal temperature of the preheating ring under non-operating conditions can be used as the second temperature. Obviously, the first temperature should be much higher than the second temperature to achieve epitaxial growth of the film.

[0096] Specifically, during the heating process from the second temperature (e.g., room temperature) to the first temperature, the preheating ring 100 can undergo a certain radially outward expansion deformation, allowing the radially outer surface of the preheating ring 100 (including the radially outer surfaces of the first ring portion 110 and the second ring portion 120) to contact the first positioning portion 211. This enables the inner lining structure 200 to position the preheating ring 100 (especially to position the concentricity of the preheating ring) when the preheating ring 100 is in a high-temperature operating state. At this time, a gap can be formed between the second ring portion 120 of the preheating ring 100 and the second positioning portion 212 without contact.

[0097] At the second temperature, the preheating ring 100 can contract radially inward relative to its state at the first temperature, and the radially outer surface of the preheating ring 100 can form a certain gap with the first positioning part 211. Meanwhile, the radially inner surface of the second ring part 120 can contact the radially outer surface of the second positioning part 212 to form a positioning of the preheating ring 100 (especially the positioning of the concentricity of the preheating ring).

[0098] At a second temperature (e.g., room temperature), the radially inner surface of the second ring contacts the radially outer surface of the second positioning portion to form a limiting position. At a first temperature (e.g., a high temperature used to form an epitaxial growth film), the preheating ring undergoes a slight deformation due to thermal expansion. At this time, the radially outer surface of the preheating ring can contact the inner surface of the first positioning portion to form a limiting position. The limiting position under both temperature conditions enables the preheating ring to maintain good concentricity with the liner structure, that is, to achieve self-positioning and centering of the preheating ring relative to the liner structure. The position of the liner structure relative to the substrate on which the wafer is placed is relatively fixed, and the concentricity between the liner structure and the substrate is good. Therefore, the preheating ring can also have good concentricity relative to the substrate, thereby improving the product quality of the wafer semiconductor product (e.g., one or more process parameters such as doping concentration, epitaxial growth film thickness, and critical dimensions).

[0099] In some embodiments, the first temperature can be greater than or equal to 800 degrees Celsius and less than or equal to 1200 degrees Celsius; the second temperature can be greater than or equal to 0 degrees Celsius and less than or equal to 50 degrees Celsius. This temperature range is suitable for practical applications of the preheating ring 100 and the inner liner structure 200 in semiconductor equipment (especially epitaxial process equipment).

[0100] In some embodiments, the first temperature can be 1000 degrees Celsius; the second temperature can be 20 to 30 degrees Celsius, particularly 25 degrees Celsius. This temperature range is more suitable for the practical application of the preheating ring 100 and the liner structure 200.

[0101] In some embodiments, at the second temperature, the gap between the radially outer surface of the preheating ring 100 and the first positioning portion 211 can be greater than or equal to 0.5 mm and less than or equal to 2 mm. This technical feature provides a suitable range of gap values ​​between the preheating ring and the first positioning portion of the liner structure at the second temperature, within which the preheating ring and the liner structure can contact each other and form a reliable positioning when heated to the first temperature. Furthermore, when the second temperature is room temperature, since the installation of the preheating ring 100 is typically performed at room temperature, this gap range can also be a reserved gap range when installing the preheating ring 100, which can be matched with the aforementioned temperature range so that the deformation of the preheating ring satisfies the aforementioned contact relationship. It is understood that 0.5 to 2 mm takes into account the radial deformation of the preheating ring and the liner structure under the temperature difference between the first and second temperatures. The specific value of this gap is related to the coefficient of thermal expansion of the materials selected for both the preheating ring 100 and the liner structure 200.

[0102] In some embodiments, the outer diameter of the preheating ring 100 may be greater than or equal to 350 mm and less than or equal to 450 mm. The inner diameter of the liner structure 200 may be greater than or equal to 380 mm and less than or equal to 420 mm. It is understood that the above size ranges are preferred ranges when considering the sizes of the preheating ring and the liner structure 200 independently. When considering the combined structure of the two, the outer diameter of the preheating ring 100 must also be greater than the inner diameter of the liner structure 200.

[0103] In some embodiments, the radially inner surface of the second ring portion 120 and / or the radially outer surface of the second positioning portion 212 may be formed with radially extending protrusions. Protrusions on the contact surfaces of the second ring portion 120 and / or the second positioning portion 212 can reduce the actual contact area between them, thereby reducing the surface area where friction may occur, and thus improving the particle problem caused by friction between the contact surfaces of the second ring portion and the second positioning portion due to deformation and displacement of the preheating ring. Furthermore, considering that the preheating ring can be installed at a second temperature, a smaller contact area also facilitates smooth installation. Specifically, as... Figure 1 , Figure 6 and Figure 7As shown, a plurality of first protrusions 121 may be formed on the radially inner surface of the second ring portion 120. The first protrusions 121 may include an inner protrusion protruding toward the radially inner side and / or an outer protrusion protruding toward the radially outer side. At the second temperature, the radially inner surface of the second ring portion 120 may contact the radially outer surface of the second positioning portion 212 via the plurality of first protrusions 121.

[0104] In some embodiments, a plurality of first protrusions 121 may be evenly distributed along the radial inner surface of the second ring portion 120. It is understood that the even distribution of a plurality of first protrusions can improve the positioning effect of the preheating ring 100 and ensure the concentricity between the preheating ring 100 and the inner liner structure 200.

[0105] Some embodiments of the first protrusion 121 are described below.

[0106] Furthermore, such as Figure 1 , Figure 6 and Figure 7 As shown, in this embodiment, the first protrusion 121 can be specifically an inwardly protruding part formed on the radially inner side of the second ring 120. At the second temperature, the plurality of inwardly protruding parts can contact the radially outer side of the second positioning part 212.

[0107] In some embodiments, the number of first protrusions 121 can be 3 to 12, more preferably 4 to 12. Within this range, the positioning effect between the preheating ring and the second positioning part is better, and the arrangement density of the first protrusions 121 is more suitable. Having more than 3 first protrusions 121 also helps to ensure the centering of the preheating ring.

[0108] In some embodiments, the arithmetic mean deviation (Ra) of the profile of the first protrusion 121 (particularly the end face of the first protrusion 121 that contacts the radially outer side of the second positioning portion 212) can be smaller than the arithmetic mean deviation (Ra) of the profile of the preheating ring 100 as a whole. That is, the surface roughness Ra value of the end face (inner circumferential surface / radial inner surface) of the first protrusion 121 can be smaller than the overall surface roughness Ra value of the preheating ring. For example, the overall arithmetic mean deviation (Ra) of the preheating ring 100 can be 1.0 (μm / micrometer), and the arithmetic mean deviation (Ra) of the profile of the end face of the first protrusion 121 can be 0.04 to 0.2 (μm / micrometer). Within this range, it is less likely for particulate matter to be generated between the preheating ring and the inner liner structure due to friction, which can further improve the quality of semiconductor products. Furthermore, setting the surface roughness of only the contact surface of the first protrusion 121, rather than the entire surface, at a higher level can also reduce the overall processing difficulty of the structure.

[0109] like Figure 3As shown, the outer diameter of the second ring portion 120 can be the same as the outer diameter of the first ring portion 110, and the inner diameter of the second ring portion 120 can be larger than the inner diameter of the first ring portion 110. This further defines the positional relationship between the first ring portion 110 and the second ring portion 120, making the outer surfaces of the first ring portion and the second ring portion coincide, and making the positioning of the preheating ring and the first positioning portion more reliable under high temperature conditions.

[0110] For example, the preheating ring can be made of graphite, ceramic, or special metal (high-temperature resistant metal), etc.

[0111] The second positioning portion 212 is described below with reference to some embodiments. In some embodiments, the second positioning portion 212 may include a plurality of second protrusions 2121 disposed along the radial inner edge of the preheating ring receiving groove 210. In particular, the second positioning portion 212 may consist only of a plurality of second protrusions 2121 connected to the body of the liner structure 200. The second protrusions 2121 may include an inner protrusion protruding radially inward and / or an outer protrusion protruding radially outward. The second protrusions 2121 may contact the radial inner surface of the second ring portion 120 at a second temperature. In particular, as Figure 6 and Figure 7 As shown, the second protrusion 2121 can be an outward protrusion protruding towards the radially outward side, and the first protrusion 121 on the second ring portion 120 can be an inward protrusion protruding towards the radially inward side, that is, the first protrusion and the second protrusion 2121 are arranged in a form where the protruding surfaces are in contact.

[0112] Understandable, such as Figure 4 , Figure 6 and Figure 11 As shown, the second protrusion 2121 may also include a portion of the structure that protrudes radially inward relative to the preheating ring receiving groove 210, but this portion of the structure may not be responsible for contacting the first protrusion 121. This portion of the structure may be used to connect the second protrusion 2121 to the main body of the liner structure 200.

[0113] In some embodiments, a plurality of second protrusions 2121 may be evenly distributed along the radial inner edge of the preheating ring receiving groove 210. The number of second protrusions 2121 may be 3 to 12, particularly 4 to 12. Furthermore, the number of first protrusions 121 and second protrusions 2121 may be the same, and they may be arranged in a one-to-one correspondence. Having more than 3 second protrusions 2121 also helps to ensure the alignment of the lining structure.

[0114] The following describes some other embodiments of the first protrusion 121. In some embodiments, such as Figure 10 and Figure 11As shown, in this embodiment, the first protrusion 121 of the preheating ring 100 is an outwardly protruding portion that bulges radially outward. This outwardly protruding portion can also be understood as forming a recess on the radial inner ring of the second ring portion 120. Correspondingly, the second positioning portion 212 in this embodiment may include a plurality of second protrusions 2121 disposed along the radial inner edge of the preheating ring receiving groove 210, and the second protrusions 2121 may be outwardly protruding portions that bulge radially outward. The first protrusion can form a concave-convex shape fit with the second protrusions 2121, i.e., as... Figure 11 As shown, the second protrusion 2121 may be at least partially disposed within the first protrusion, and at the second temperature, the bottom surface of the radially inner side of the first protrusion may contact the end surface of the radially outer side of the second protrusion 2121.

[0115] It is understood that embodiments of this application may also include various possible combinations of the first protrusion and the second protrusion 2121, including but not limited to: only the second ring portion 120 is provided with the first protrusion 121, while the second positioning portion 212 is not provided with the second protrusion 2121 (for example, the second positioning portion may be provided as a complete ring portion, or as a plurality of spaced arc portions with the same diameter); only the second positioning portion 212 is provided with the second protrusion 2121, while the second ring portion 120 is not provided with the first protrusion (for example, the second ring portion 120 may be provided as a complete ring portion, or as a plurality of spaced arc portions with the same diameter); the second ring portion 120 is not provided with the first protrusion 121, and the second positioning portion 212 is also not provided with the second protrusion 2121; while the second ring portion 120 is provided with the first protrusion 121, the second positioning portion 212 is provided with the second protrusion 2121.

[0116] Furthermore, when the second ring portion 120 is provided with the first protrusion 121 and the second positioning portion is provided with the second protrusion 2121, the first protrusion and the second protrusion 2121 can correspond one-to-one, and the shapes of the first protrusion and the second protrusion 2121 can also have various combinations. The end faces (bottom faces) of the first protrusion and the second protrusion 2121 need to be able to form contact (at the second temperature). The combination of the first convex portion and the second convex portion 2121 includes, but is not limited to: both the first convex portion and the second convex portion 2121 being outwardly convex portions protruding radially outward, that is, the first convex portion and the second convex portion 2121 forming a "nested fit" similar to protruding radially outward; both the first convex portion and the second convex portion 2121 being inwardly convex portions protruding radially inward, that is, the first convex portion and the second convex portion 2121 forming a "nested fit" similar to protruding radially inward; the first convex portion being an inwardly convex portion protruding radially inward, and the second convex portion 2121 being an outwardly convex portion protruding radially outward, such that the end faces of the first convex portion and the second convex portion 2121 can contact each other at a second temperature.

[0117] To adapt to more flexible semiconductor processing needs (e.g., an epitaxial process apparatus can have the ability to process different film layers under different temperature conditions), this embodiment provides a specific technical solution for a possible third temperature.

[0118] Based on the first temperature and the second temperature, the preheating ring, the inner liner structure, and the semiconductor equipment including the preheating ring of this application can have another operating temperature—a third temperature, which is suitable for different semiconductor processing requirements than the first temperature. The third temperature can be lower than the first temperature but higher than the second temperature, that is, the third temperature is another operating temperature (which can be called the cold cavity temperature) that is lower than the first temperature (which can be called the hot cavity temperature).

[0119] In some embodiments, the temperature range of the third temperature can be 400 to 700 degrees Celsius, and in some embodiments, the temperature range of the third temperature can be 500 to 600 degrees Celsius.

[0120] At the third temperature, the radially outer side of the preheating ring 100 can form a gap with the first positioning part 211, and at the same time, the radially inner side of the second ring part 120 of the preheating ring 100 can also form a gap with the radially outer side of the second positioning part 212.

[0121] In some embodiments, at the third temperature, the gap between the radially inner surface of the second ring portion 120 of the preheating ring 100 and the radially outer surface of the second positioning portion 212 can be greater than 0 and less than or equal to 2 mm. In some embodiments, the gap between the radially inner surface of the second ring portion 120 of the preheating ring 100 and the radially outer surface of the second positioning portion 212 can be greater than or equal to 0.7 mm and less than or equal to 1.5 mm. These gap values ​​in some embodiments allow the preheating ring 100 and the liner structure 200 to form a suitable gap at the third temperature, thereby enabling the preheating ring to form appropriate contact and concentric positioning at both the first and third temperatures.

[0122] Example 2

[0123] Based on the above embodiments, this second embodiment provides a self-positioning structure that can be applied in semiconductor devices. The self-positioning structure of this embodiment may include the aforementioned preheating ring 100 and inner liner structure 200. The inner liner structure 200 may form an annular preheating ring receiving groove 210 with an upward opening for accommodating at least a portion of the preheating ring 100. A first positioning portion 211 may be formed on the radial outer edge of the preheating ring receiving groove 210, and a second positioning portion 212 may be formed on the radial inner edge of the preheating ring receiving groove 210. The preheating ring 100 may include a first ring portion 110 and a second ring portion 120 formed by the downward protrusion of the radial outer edge of the first ring portion 110.

[0124] At a first temperature, a gap is formed between the radially inner surface of the second ring portion 120 and the radially outer surface of the second positioning portion 212, and the radially outer surface of the preheating ring 100 contacts the first positioning portion 211 to position the preheating ring 100. At a second temperature lower than the first temperature, a gap is formed between the radially outer surface of the preheating ring 100 and the first positioning portion 211. The radially inner surface of the second ring portion 120 contacts the radially outer surface of the second positioning portion 212 to position the preheating ring 100.

[0125] The basic structure of the automatic positioning structure in this embodiment has been given above. Based on this, the preheating ring 100 and the inner liner structure 200 can have structural modifications or improvements in any of the aforementioned embodiments, and have the corresponding technical effects or advantages brought about by the structural modifications or improvements. Of course, the preheating ring 100 (first protrusion) and the inner liner structure 200 (second protrusion 2121) in the self-positioning structure need to be able to form a fit or contact. For example, the preheating ring with the first protrusion facing radially outward and the inner liner structure 200 with the second protrusion 2121 facing radially inward should not be arranged in the same self-positioning structure.

[0126] Example 3

[0127] Based on the above embodiments, this embodiment provides a semiconductor device. This semiconductor device can be an epitaxial process apparatus, which may include a cavity. The cavity may be divided into an outer cavity and an inner cavity. The outer cavity may include a stainless steel cavity and upper and lower transparent quartz, while the inner cavity may include foamed quartz. The inner cavity may include the aforementioned self-positioning structure, that is, the aforementioned preheating ring 100 and inner liner structure 200 may be disposed in the inner cavity. Based on the aforementioned self-positioning structure, this epitaxial process apparatus can make the positioning of the preheating ring more accurate, further enhancing the temperature compensation effect of the preheating ring. The preheating ring 100 and the inner liner structure 200 may have structural modifications or improvements in any of the aforementioned embodiments, and the corresponding technical effects or advantages brought about by the structural modifications or improvements.

[0128] like Figure 3 As shown, the semiconductor device may further include a base 300 for supporting the wafer. The base 300 may be disposed radially inside the preheating ring 100, and a first gap 10 for gas flow may be formed between the base 300 and the preheating ring 100. The first gap 10 is an annular gap, and it should be understood that the concentricity of the preheating ring 100 and the inner liner structure 200 will affect the uniformity of the first gap 10.

[0129] The above-described preferred embodiments have further illustrated the purpose, technical solutions, and advantages of the present invention. It should be understood that the above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A preheating ring (100) characterized in that, The preheating ring (100) is applied to a semiconductor device, the semiconductor device comprising an inner lining structure (200); the inner lining structure (200) is formed with a preheating ring accommodating groove (210) in the shape of an annulus with an opening upward, for accommodating at least part of the preheating ring (100); a radial outer edge of the preheating ring accommodating groove (210) forms a first positioning part (211), and a radial inner edge of the preheating ring accommodating groove (210) forms a second positioning part (212); The preheating ring (100) comprises a first ring part (110) and a second ring part (120) which is formed by a radial outer edge of the first ring part (110) being protruded downward; At a first temperature, a gap is formed between a radial inner side of the second ring part (120) and a radial outer side of the second positioning part (212), and a radial outer side of the preheating ring (100) is in contact with the first positioning part (211) to form positioning of the preheating ring (100); and At a second temperature lower than the first temperature, a gap is formed between the radial outer side of the preheating ring (100) and the first positioning part (211), and the radial inner side of the second ring part (120) is in contact with the radial outer side of the second positioning part (212) to form positioning of the preheating ring (100).

2. The preheating ring (100) according to claim 1, characterized in that: At the second temperature, the gap between the radial outer side of the preheating ring (100) and the first positioning part (211) is greater than or equal to 0.5 millimeters and less than or equal to 2 millimeters.

3. The preheating ring (100) according to claim 1 or 2, characterized in that: The first temperature is greater than or equal to 800 degrees Celsius and less than or equal to 1200 degrees Celsius; and / or The second temperature is greater than or equal to 0 degrees Celsius and less than or equal to 50 degrees Celsius.

4. The preheating ring (100) according to any one of claims 1 to 3, characterized in that: At a third temperature lower than the first temperature and higher than the second temperature, the gap between the radial inner side of the second ring part (120) and the radial outer side of the second positioning part (212) is greater than 0 millimeters and less than or equal to 2 millimeters, and a gap is formed between the radial outer side of the preheating ring (100) and the first positioning part (211).

5. The preheating ring (100) according to claim 4, characterized in that: At the third temperature, the gap between the radial inner side of the second ring part (120) and the radial outer side of the second positioning part (212) is greater than or equal to 0.7 millimeters and less than or equal to 1.5 millimeters.

6. The preheating ring (100) according to claim 4 or 5, characterized in that: The third temperature is greater than or equal to 400 degrees Celsius and less than or equal to 700 degrees Celsius.

7. The preheating ring (100) according to any one of claims 1 to 6, characterized in that: A plurality of first protrusions (121) are formed on the radially inner side of the second ring portion (120), the plurality of first protrusions (121) including an inner protrusion protruding toward the radially inner side and / or an outer protrusion protruding toward the radially outer side; At the second temperature, the radially inner side of the second ring portion (120) is in contact with the radially outer side of the second positioning portion (212) via the plurality of first protrusions (121).

8. The preheat ring (100) of claim 7, characterized in that, The plurality of first protrusions (121) are uniformly distributed along the radially inner side of the second ring portion (120).

9. The pre-heat ring (100) according to claim 7 or 8, characterized in that The number of the first protrusions (121) is 3 to 12.

10. The pre-heat ring (100) according to any one of claims 7-9, characterized in that, The profile arithmetic mean deviation of the radially inner circumferential surface of the first protrusion (121) is greater than or equal to 0.04 micrometers and less than or equal to 0.2 micrometers.

11. The preheat ring (100) of claim 1, wherein, The preheating ring (100) is formed with a ring portion opening (130) extending in the radial direction and penetrating through the first ring portion (110) and the second ring portion (120).

12. A lining structure (200) characterized by, The inner lining structure (200) is applied to a semiconductor device including a preheating ring (100); the inner lining structure (200) is formed with a preheating ring accommodating groove (210) in the shape of an annulus with an opening upward, for accommodating at least part of the preheating ring (100); A radially outer edge of the preheating ring accommodating groove (210) forms a first positioning portion (211), and a radially inner edge of the preheating ring accommodating groove (210) forms a second positioning portion (212); The preheating ring (100) includes a first ring portion (110) and a second ring portion (120) protruding downward from a radially outer edge of the first ring portion (110); At a first temperature, a gap is formed between a radially outer side of the second positioning portion (212) and a radially inner side of the second ring portion (120), and the first positioning portion (211) is in contact with a radially outer side of the preheating ring (100) to form positioning of the preheating ring (100); At a second temperature lower than the first temperature, a gap is formed between the first positioning portion (211) and the radially outer side of the preheating ring (100), and the radially outer side of the second positioning portion (212) is in contact with the radially inner side of the second ring portion (120) to form positioning of the preheating ring (100).

13. The inner lining structure (200) according to claim 12, wherein: At the second temperature, the gap between the first positioning portion (211) and the radially outer side of the preheating ring (100) is greater than or equal to 0.5 millimeters and less than or equal to 2 millimeters.

14. The inner lining structure (200) according to claim 12 or 13, wherein: The first temperature is greater than or equal to 800 degrees Celsius and less than or equal to 1200 degrees Celsius; and / or The second temperature is greater than or equal to 0 degrees Celsius and less than or equal to 50 degrees Celsius.

15. The inner lining structure (200) according to any one of claims 12 to 14, wherein: At a third temperature lower than the first temperature and higher than the second temperature, a gap between a radially outer side of the second positioning portion (212) and a radially inner side of the second ring portion (120) is greater than 0 millimeter and less than or equal to 2 millimeters, and a gap is formed between the first positioning portion (211) and a radially outer side of the preheating ring (100).

16. The inner liner structure (200) according to claim 15, characterized in that: At the third temperature, the gap between the radially outer side of the second positioning portion (212) and the radially inner side of the second ring portion (120) is greater than or equal to 0.7 millimeter and less than or equal to 1.5 millimeter.

17. The inner liner structure (200) according to claim 15 or 16, characterized in that: The third temperature is greater than or equal to 400 degrees Celsius, and the third temperature is less than or equal to 700 degrees Celsius.

18. The inner liner structure (200) according to any one of claims 12 to 17, characterized in that: The second positioning portion (212) comprises a plurality of second protrusions arranged along a radially inner edge of the preheating ring accommodating groove (210), the plurality of second protrusions comprising an inner protrusion protruding towards a radially inner side and / or an outer protrusion protruding towards a radially outer side; At the second temperature, the plurality of second protrusions are in contact with the radially inner side of the second ring portion (120).

19. The inner liner structure (200) according to claim 18, characterized in that: The plurality of second protrusions are uniformly distributed along the radially inner edge of the preheating ring accommodating groove (210).

20. The inner liner structure (200) according to claim 18 or 19, characterized in that: The number of the second protrusions is 3 to 12.

21. The inner liner structure (200) according to any one of claims 12 to 20, characterized in that, The preheating ring accommodating groove (210) of the inner liner structure (200) is provided with a positioning block (400) for cooperating with a ring portion opening (130) penetrating along a radial direction of the preheating ring (100) to limit movement of the preheating ring (100) in the preheating ring accommodating groove (210).

22. A semiconductor device, comprising: A chamber comprising the preheating ring (100) according to any one of claims 1 to 11 and / or the inner liner structure (200) according to any one of claims 12-21.

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