Upper top plate and substrate processing device

Abstract

The upper top plate according to the present invention is disposed at the upper part of a chamber, and comprises: a base; an upper electrode disposed on the lower surface side of the susceptor; and a heat transfer medium provided between a lower surface of the susceptor and an upper surface of the upper electrode, the heat transfer medium being filled in a heat transfer space surrounded by the seal, the susceptor forming a buffer space communicating with the heat transfer space on a lower surface adjacent to the heat transfer space, the heat transfer medium being further filled in a part of the buffer space.

Description

TECHNICAL FIELD

[0001] The present application relates to an upper ceiling and a substrate processing apparatus. BACKGROUND

[0002] It is disclosed that in an electrode assembly, a heat conductive gasket has a composite of an aluminum foil covered with a heat conductive and conductive rubber, and the heat conductive gasket is composed of a carbon nanotube filler material (Patent Document 1).

[0003] PRIOR ART DOCUMENTS

[0004] PATENT DOCUMENTS

[0005] Patent Document 1: US Patent No. 8216418 Specification SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] The present application provides an upper ceiling and a substrate processing apparatus capable of maintaining good heat conduction even if a susceptor is deformed due to heat input.

[0008] MEANS OF SOLVING THE PROBLEMS

[0009] One embodiment of the present application is an upper ceiling disposed at an upper portion of a chamber, including: a susceptor; an upper electrode disposed at a lower surface side of the susceptor; and a heat conductive medium provided between a lower surface of the susceptor and an upper surface of the upper electrode, filled in a heat transfer space surrounded by a seal member, the susceptor being formed with a buffer space communicating with the heat transfer space at a lower surface adjacent to the heat transfer space, the heat conductive medium being further filled in a part of the buffer space.

[0010] EFFECTS OF THE INVENTION

[0011] According to the present application, good heat conduction can be maintained even if a susceptor is deformed due to heat input. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 is a view showing an example of a plasma processing apparatus in one embodiment of the present application.

[0013] Figure 2 is a perspective view showing an example of an upper electrode in the present embodiment.

[0014] Figure 3 is a cross-sectional view showing an example of a heat transfer space in the present embodiment.

[0015] Figure 4 is a cross-sectional view showing another example of a heat transfer space in the present embodiment.

[0016] Figure 5is a cross-sectional view showing an example of a state of a heat transfer space at the time of deformation in the present embodiment.

[0017] Figure 6 is a cross-sectional view showing another example of a buffer space in the present embodiment.

[0018] Figure 7 is a cross-sectional view showing another example of a buffer space in the present embodiment. DETAILED DESCRIPTION

[0019] Hereinafter, the disclosed embodiments of the upper ceiling and the substrate processing apparatus will be described in detail based on the drawings. Furthermore, the disclosed technology is not limited to the following embodiments.

[0020] In a plasma processing apparatus, an upper ceiling is provided at an upper portion of a chamber, and the upper ceiling has an upper electrode facing an inside of the chamber, and a cooling plate (hereinafter, also referred to as a susceptor) for cooling the upper electrode. A heat conducting medium having good heat conductivity such as a heat transfer sheet (heat conducting sheet) is provided between the upper electrode and the cooling plate, and heat is transferred from the upper electrode to which heat is input by plasma to the cooling plate. However, with the high power of plasma, the amount of heat input to each portion of the chamber increases, and the amount of deformation of the cooling plate which deforms due to atmospheric pressure or heat input increases. When the cooling plate deforms, a portion where the heat conducting medium provided between the upper electrode and the cooling plate does not contact can be generated. Therefore, heat conduction between the upper electrode and the cooling plate can deteriorate. Thus, it is desired that even if the cooling plate (susceptor) deforms due to heat input, good heat conduction can be maintained.

[0021] [Structure of Plasma Processing System]

[0022] Hereinafter, a structure example of a plasma processing system will be described. Figure 1 is a view showing an example of a plasma processing apparatus in one embodiment of the present application. As shown in FIG. 1, a plasma processing apparatus 1 includes a chamber 2, a substrate W, an upper electrode 3, a cooling plate 4, a heat conducting medium 5, and a gas supply source 6. Figure 1As shown, the plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a control section 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a cooling unit 17, a gas supply section 20, a power supply 30, and an exhaust system 40. Further, the plasma processing apparatus 1 includes a substrate support section 11 and a gas introduction section. The gas introduction section is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction section includes a showerhead 13. The substrate support section 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support section 11. In one embodiment, the showerhead 13 constitutes at least a portion of a ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support section 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s, and at least one gas exhaust port for exhausting gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support section 11 are electrically insulated from a housing of the plasma processing chamber 10.

[0023] The substrate support section 11 includes a main body section 111 and a ring assembly 112. The main body section 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body section 111 encloses the central region 111a of the main body section 111 when viewed from above. The substrate W is disposed on the central region 111a of the main body section 111, and the ring assembly 112 is disposed on the annular region 111b of the main body section 111 so as to enclose the substrate W on the central region 111a of the main body section 111. Thus, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0024] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes an electrically conductive member. The electrically conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed above the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed in the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has a ring-shaped region 111b. Further, other members that surround the electrostatic chuck 1111, such as a ring-shaped electrostatic chuck, a ring-shaped insulating member, etc., can also have the ring-shaped region 111b. In this case, the ring assembly 112 can be disposed above the ring-shaped electrostatic chuck or the ring-shaped insulating member, or above both the electrostatic chuck 1111 and the ring-shaped insulating member. Further, at least one RF / DC electrode coupled to the RF (Radio Frequency) power source 31 and / or the DC (Direct Current) power source 32 described later can be disposed in the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. The RF / DC electrode is also referred to as a bias electrode in the case where a bias RF signal and / or a DC signal described later is supplied to the at least one RF / DC electrode. Further, the electrically conductive member of the base 1110 and the at least one RF / DC electrode can also function as a plurality of lower electrodes. Further, the electrostatic electrode 1111b can also function as a lower electrode. Thus, the wafer support portion 11 includes at least one lower electrode.

[0025] The ring assembly 112 includes one or more ring-shaped members. In one embodiment, the one or more ring-shaped members include one or more edge rings and at least one cover ring. The edge rings are formed of an electrically conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0026] Further, the wafer support portion 11 can also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the wafer to a target temperature. The temperature adjustment module can include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine, a gas, etc. can flow in the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. Further, the wafer support portion 11 can also include a heat transfer gas supply portion configured to supply a heat transfer gas to a gap between the back surface of the wafer W and the central region 111a.

[0027] The shower head 13 is configured to introduce at least one kind of processing gas from the gas supply portion 20 into the plasma processing space 10s. The shower head 13 is supported in the upper portion of the plasma processing chamber 10 via an insulating shield member 19. The shower head 13 includes a cooling plate (base) 14 and an upper electrode 18. A plurality of discharge holes 18a that pass through in the thickness direction and discharge the processing gas into the plasma processing chamber 10 are formed in the upper electrode 18.

[0028] The cooling plate 14 is composed of an electrically conductive material and detachably supports the upper electrode 18 in the lower portion thereof. The cooling plate 14 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The plurality of gas introduction ports 13c respectively communicate with the plurality of discharge holes 18a. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c and the plurality of discharge holes 18a through the gas diffusion chamber 13b. Further, the gas introduction portion can include one or more side gas injectors (SGI) installed in one or more opening portions formed in the side wall 10a in addition to the shower head 13.

[0029] Further, a flow path 15 is provided inside the cooling plate 14, and a refrigerant from a cooling unit 17 provided outside the plasma processing chamber 10 is supplied to the flow path 15 via a pipe 16. The refrigerant supplied from the cooling unit 17 to the flow path 15 of the cooling plate 14 via the pipe 16 circulates in the flow path 15 and returns to the cooling unit 17 via the pipe 16. The cooling unit 17 controls the temperature of the refrigerant supplied to the flow path 15. The cooling unit 17 is an example of a temperature control portion. By circulating the refrigerant whose temperature is controlled in the flow path 15, the temperature rise of the shower head 13 due to heat input from the plasma generated between the substrate support portion 11 and the shower head 13 can be suppressed. Further, the cooling plate 14 can not be provided with the flow path inside, but can suppress the temperature rise of the shower head 13 by an air cooling method that exchanges heat with the atmosphere outside the plasma processing chamber 10, or a water cooling jacket, a Peltier element, or the like installed on the outside.

[0030] The upper electrode 18 is composed of an electrically conductive material such as silicon or SiC. Further, in the lower portion of the cooling plate 14, instead of the upper electrode 18, a plate composed of a dielectric material such as quartz or ceramic and formed with a plurality of discharge holes that respectively communicate with the plurality of gas introduction ports 13c can be detachably supported.

[0031] The gas supply section 20 can include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply section 20 is configured to supply at least one process gas from a gas source 21 corresponding thereto to the showerhead 13 via a flow controller 22 corresponding thereto. Each flow controller 22 can include, for example, a mass flow controller or a pressure-controlled flow controller. Further, the gas supply section 20 can also include one or more flow modulation devices that modulate or pulse the flow of at least one process gas.

[0032] The power supply 30 includes an RF power source 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power source 31 is configured to supply at least one RF signal (RF electrical power) to the at least one lower electrode and / or the at least one upper electrode. Thereby, a plasma is formed from the at least one process gas supplied to the plasma processing space 10s. Thus, the RF power source 31 can function as at least a part of a plasma generation section configured to generate a plasma from one or more process gases in the plasma processing chamber 10. Further, by supplying a bias RF signal to the at least one lower electrode, a bias potential can be generated at the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0033] In one embodiment, the RF power source 31 includes a first RF generation section 31a and a second RF generation section 31b. The first RF generation section 31a is coupled to the at least one lower electrode and / or the at least one upper electrode via at least one impedance matching circuit and is configured to generate a generation source RF signal (generation source RF electrical power) for plasma generation. In one embodiment, the generation source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation section 31a can also be configured to generate a plurality of generation source RF signals having different frequencies. The generated one or more generation source RF signals are supplied to the at least one lower electrode and / or the at least one upper electrode.

[0034] The second RF generating section 31b is coupled to the at least one lower electrode via at least one impedance matching circuit and configured to be capable of generating a bias RF signal (bias RF electric power). The bias RF signal can have the same frequency as that of the source RF signal or a different frequency. In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating section 31b can also be configured to be capable of generating a plurality of bias RF signals having different frequencies. The generated bias RF signal(s) is / are supplied to the at least one lower electrode. Further, in various embodiments, at least one of the source RF signal and the bias RF signal can also be pulsed.

[0035] Further, the power supply 30 can also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating section 32a and a second DC generating section 32b. In one embodiment, the first DC generating section 32a is connected to the at least one lower electrode and configured to be capable of generating a first DC signal. The generated first bias DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generating section 32b is connected to the at least one upper electrode and configured to be capable of generating a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0036] In various embodiments, at least one of the first and second DC signals can also be pulsed. In this case, a sequence of voltage pulses is applied to the at least one lower electrode and / or the at least one upper electrode. The voltage pulses can have a pulse waveform of a rectangle, a trapezoid, a triangle, or a combination thereof. In one embodiment, a waveform generating section for generating a sequence of voltage pulses from the DC signal is connected between the first DC generating section 32a and the at least one lower electrode. Thus, the first DC generating section 32a and the waveform generating section constitute a voltage pulse generating section. In the case where the second DC generating section 32b and the waveform generating section constitute a voltage pulse generating section, the voltage pulse generating section is connected to the at least one upper electrode. The voltage pulses can have a positive polarity or a negative polarity. Further, the sequence of voltage pulses can include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one cycle. Further, the first and second DC generating sections 32a, 32b can be provided in addition to the RF power supply 31 or the first DC generating section 32a can be provided instead of the second RF generating section 31b.

[0037] The exhaust system 40 can be connected to a gas outlet 10e, for example, located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve allows for the regulation of the pressure within the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0038] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control the various elements of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control actions by reading a program from the storage unit 2a2 and executing the read program. The program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The retrieved program is stored in the storage unit 2a2 and read and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 can communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0039] [Details of the upper electrode and heat transfer space]

[0040] Next, use Figures 2 to 5 The state of the upper electrode 18 and the heat transfer space, as well as the state of the heat transfer space when the cooling plate deforms, is described. Figure 2 This is a perspective view showing an example of the upper electrode in this embodiment. Figure 2As shown, on the upper surface 18b of the upper electrode 18 that contacts the cooling plate 14, sealing elements 50 and 51 of different diameters are respectively arranged in a ring shape in the circumferential direction on the outer periphery. The sealing element 51 is positioned further inward than the sealing element 50. The sealing elements 50 and 51 are, for example, lip seals to prevent the heat transfer medium from deteriorating or being consumed. A heat transfer plate 52 is provided between the sealing elements 50 and 51. The heat transfer plate 52 can be, for example, made of silicon, aluminum, or other metals, graphite, resin, etc. Furthermore, in... Figure 2 In the figure, the discharge port 18a of the upper electrode 18 is omitted.

[0041] Figure 3 This is a cross-sectional view showing an example of the heat transfer space in this embodiment. Figure 3 The image shows a cross-section near the seals 50 and 51 in the spray head 13, with the upper electrode 18 mounted on the cooling plate 14. (See image for reference.) Figure 3 As shown, in this embodiment, the cooling plate 14 is divisible into a lower component 14a and an upper component 14b. Alternatively, the cooling plate 14 may be an integrated structure of the lower component 14a and the upper component 14b. A heat transfer space 53, surrounded by seals 50 and 51, is formed between the lower surface of the lower component 14a and the upper surface of the upper electrode 18. A [missing information - likely a device or structure] is disposed within the heat transfer space 53. Figure 2 The heat transfer plate 52 is shown. Furthermore, in the lower component 14a, a buffer space 54 communicating with the heat transfer space 53 is formed on its lower surface adjacent to the heat transfer space 53. A through hole 56 is formed in the upper component 14b, extending from its upper surface to its lower surface and communicating with the buffer space 54.

[0042] A fluid 55 is filled in the heat transfer space 53. The fluid 55 fills the gap between the heat transfer plate 52 and the lower surface of the lower component 14a in the heat transfer space 53, and also fills a portion of the buffer space 54 that communicates with the heat transfer space 53. That is, the heat transfer plate 52 and the fluid 55 are examples of heat-conducting media. The fluid 55 is a liquid substance, for example, a vacuum grease with low volatility for heat transfer can be used in a vacuum atmosphere. As a vacuum grease, for example, a vacuum grease of the silicon, fluorine, or metal type can be used. The fluid 55 is pre-applied, for example, between the seals 50 and 51 of the upper electrode 18 when assembling the spray head 13. By pressing the upper electrode 18 against the cooling plate 14, the fluid 55 fills the heat transfer space 53, and a portion is squeezed out into the buffer space 54. Alternatively, after assembling the spray head 13, the fluid 55 can fill the heat transfer space 53 with the through hole 56, which communicates with the buffer space 54 of the upper component 14b, and the buffer space 54 as the injection path. Furthermore, the through hole 56 is not connected to the gas diffusion chamber 13b or the gas inlet 13c. Also, the upper part of the through hole 56 is not sealed with a cover.

[0043] Figure 4 This is a cross-sectional view showing another example of the heat transfer space in this embodiment. (and) Figure 3 The spray head 13 is different. Figure 4 The spray head 13 shown is illustrated with the upper part of the through hole 56 sealed by the cover 56a. That is, the through hole 56 may or may not be sealed by the cover 56a. Furthermore, when the through hole 56 is sealed by the cover 56a, it is preferable to have a vent hole in the cover 56a or another part of the upper component 14b. The vent hole is used to vent air or other gases present in the buffer space 54 and the through hole 56 to the outside (not shown) when a portion of the fluid 55 is squeezed into the buffer space 54.

[0044] The buffer spaces 54 are, for example, slit-shaped or perforated, and multiple such spaces are provided in the lower part 14a above the annular heat transfer space 53. Furthermore, a slit shape refers to a shape with a long, narrow rectangular or arc-shaped cross-section when viewed from the upper surface of the cooling plate 14. Similarly, a perforated shape refers to a shape with a circular or quadrilateral cross-section when viewed from the upper surface of the cooling plate 14. In this case, the buffer spaces 54 can be provided at equal intervals around the circumference, for example. Furthermore, sealing elements 14c and 14d are provided between the lower part 14a and the upper part 14b, and on the outer and inner sides of the buffer spaces 54, respectively, to maintain the airtightness of the plasma processing space 10s.

[0045] Figure 5 This is a cross-sectional view showing an example of the state of the heat transfer space during deformation in this embodiment. Figure 5The image shows the area near the seals 50 and 51 of the spray head 13 in the case where the cooling plate 14 deforms due to the heat input of the plasma. (See image for details.) Figure 5 As shown, a gap 58 is created at the periphery of the spray head 13, between the lower surface of the lower component 14a and the upper surface of the upper electrode 18, due to the deformation of the cooling plate 14. At this time, the vertical spacing in the heat transfer space 53 widens, creating a gap, but the fluid 55 filling the buffer space 54 fills this gap due to gravity. Furthermore, the fluid 55's viscosity decreases due to the heat input, causing its temperature to rise, making it easier to fill the gap. Even with the gap 58, the seals 50 and 51 seal it to prevent leakage of the fluid 55 to the outside. Moreover, since the buffer space 54 and the atmospheric space above the upper surface of the upper component 14b are at the same pressure, the flow of the fluid 55 is not hindered by the pressure within the buffer space 54, and its movement into the heat transfer space 53 is not impeded.

[0046] When from Figure 5 When the state changes to no plasma heat input, return Figure 3 In this state, due to the deformation recovery caused by the heat input, the excess fluid 55 returns from the heat transfer space 53 to the buffer space 54. Thus, in this embodiment, even if the cooling plate 14 deforms due to the heat input, its contact area with the upper electrode 18 can be maintained by the heat transfer plate 52 and the fluid 55 in the heat transfer space 53, thereby maintaining good heat conduction.

[0047] Furthermore, in this embodiment, it is envisioned that the circular cooling plate 14 deforms downwards from its center. Therefore, when this deformation occurs, the peripheral portion where a gap is created between the cooling plate 14 and the upper electrode 18 is ensured by an annular heat transfer space 53 surrounded by seals 50 and 51, providing sufficient contact area for heat transfer. For example, the contact area between the cooling plate 14 and the upper electrode 18 is envisioned to be approximately 50% of the area of ​​the lower surface of the cooling plate 14 and the upper surface of the upper electrode 18. In this case, if the contact area becomes 10% due to deformation when only heat transfer plates are used for heat transfer, the heat transfer capacity will decrease significantly, making it impossible to maintain the temperature of the upper electrode 18. In contrast, in this embodiment, by using both the heat transfer plate 52 and the fluid 55, a 50% contact area can be maintained. Furthermore, if the thermal conductivity of the fluid 55 is high, the heat transfer plate 52 in the heat-conducting medium can be omitted, and only the fluid 55 can be used.

[0048] In addition, Figure 3 and Figure 5In the example shown in FIG. 6, the through-hole 56 is used to communicate the atmospheric space with the buffer space 54, but the present application is not limited to this. For example, instead of the through-hole 56, a gap, a through-hole, which communicates with the gas diffusion chamber 13b or the plasma processing space 10s, can be provided. In this case, since the buffer space 54 and the gas diffusion chamber 13b or the plasma processing space 10s are at the same pressure, the movement of the flowable body 55 is not hindered by the pressure in the buffer space 54, and the flowable body 55 is not hindered from moving to the heat transfer space 53. In addition, in the case where the buffer space 54 communicates with the gas diffusion chamber 13b or the plasma processing space 10s, the flowable body 55 used is preferably not volatile, or is very slightly volatile, under the pressure of the gas diffusion chamber 13b or the plasma processing space 10s. In addition, in the case where the through-hole 56 is not provided, the flowable body 55 can be filled into the heat transfer space 53 using the gap, the through-hole, which communicates with the gas diffusion chamber 13b or the plasma processing space 10s, and the buffer space 54 as an injection path after the shower head 13 is assembled.

[0049] [Modified Example]

[0050] In the above-described embodiment, the cross-sectional area of the buffer space 54 is the same throughout the entire region in the up-down direction, but the cross-sectional area of the upper portion or the lower portion of the buffer space 54 can be larger, and this case will be described as a modified example. In addition, the plasma processing apparatus in the modified example is the same as the above-described embodiment, and thus the description of the repeated structure and operation will be omitted.

[0051] Figure 6 and Figure 7 is a cross-sectional view showing another example of the buffer space in the present embodiment. Figure 6 In the shower head 13d shown in FIG. 7, the lower member 14a is replaced with a lower member 14e. In the lower member 14e, a buffer space 54a is formed. The buffer space 54a is formed so that the cross-sectional area of the lower portion (the heat transfer space 53 side) is larger than the cross-sectional area of the upper portion, as shown in a region 60. In addition, the region 60 can be a tapered shape, or other shapes such as a stepped shape. By providing the region 60, the flowable body 55 in the buffer space 54a is more easily filled into the heat transfer space 53. In addition, the storage amount of the flowable body 55 in the heat transfer space 53 and the buffer space 54a can be increased.

[0052] Figure 7The shower head 13e is used instead of the lower member 14a with the lower member 14f. The buffer space 54b is formed in the lower member 14f. The buffer space 54b is formed as shown in the region 61, the cross-sectional area of the upper portion (the side opposite to the heat transfer space 53) is larger than that of the lower portion. Further, the region 61 can be a tapered shape as well as the region 60, or other shapes such as a stepped shape. By providing the region 61, the storage amount of the flow body 55 in the heat transfer space 53 and the buffer space 54b can be increased. Further, the radial width of the upper portion of the buffer space 54b, that is, the radial width of the buffer space 54b of the upper surface of the lower member 14f is formed to be smaller than the interval of the seal members 14c and 14d, and the air tightness of the plasma processing space 10s can be maintained.

[0053] As for the lower member 14e of the shower head 13d and the lower member 14f of the shower head 13e, it is preferable to determine which one to use depending on the thermal conductivity of the heat transfer medium. For example, in the case where the thermal conductivity of the heat transfer sheet 52 is smaller than that of the flow body 55, it is preferable to use the lower member 14e. On the other hand, in the case where the thermal conductivity of the heat transfer sheet 52 is larger than that of the flow body 55, it is preferable to use the lower member 14f. That is, in the case of using the lower member 14f, the contribution of the flow body 55 is reduced. Further, the lower member 14e and the lower member 14f can be combined to form the upper and lower portions of the buffer space 54 with larger cross-sectional areas.

[0054] Further, in the above-described embodiment, the heat transfer space 53 is formed in a ring shape, but is not limited thereto. For example, the heat transfer space 53 can also be formed in a plurality of island shapes independent of each other in the circumferential direction of the cooling plate 14 and the upper electrode 18. Thereby, the heat transfer space 53 can be easily formed while avoiding the connection portions of the flow path 15 and the pipe 16 inside the cooling plate 14, the gas supply port 13a, and the like.

[0055] In the above, according to the present embodiment, the upper ceiling (shower head 13) is an upper ceiling disposed at the upper portion of the chamber (plasma processing chamber 10), and has: a base (cooling plate 14); an upper electrode 18 disposed on the lower surface side of the base and facing the inside of the chamber; and a heat transfer medium (flow body 55) provided between the lower surface of the base and the upper surface of the upper electrode 18 and filled in the heat transfer space 53 surrounded by the seal members 50 and 51. The base is formed with the buffer space 54 communicating with the heat transfer space 53 on the lower surface adjacent to the heat transfer space 53, and the heat transfer medium is also filled in a part of the buffer space 54. As a result, even if the base is deformed due to heat input, good heat conduction can be maintained.

[0056] Furthermore, according to this embodiment, the heat-conducting medium comprises a liquid substance. As a result, even if deformation caused by repeated heat input occurs, the heat transfer space 53 is filled with the heat-conducting medium each time deformation occurs, thus maintaining good heat conduction.

[0057] Furthermore, according to this embodiment, the heat-conducting medium includes heat transfer plates 52 disposed within the heat transfer space 53. As a result, the amount of fluid 55 required can be reduced.

[0058] Furthermore, according to this embodiment, the liquid substance is vacuum grease. As a result, even if the buffer space 54 becomes a vacuum atmosphere, the evaporation of the vacuum grease (fluid 55) can be suppressed.

[0059] Furthermore, according to this embodiment, the buffer space 54 is connected to the injection path (through hole 56) that communicates with the outside of the base. As a result, the fluid 55 can be filled into the heat transfer space 53 even after the spray head 13 is assembled.

[0060] Furthermore, according to this embodiment, the injection path is connected to the interior of the chamber. As a result, the movement of the fluid 55 from the buffer space 54 to the heat transfer space 53 is not impeded.

[0061] Furthermore, according to this embodiment, the pressure inside the buffer space 54 varies with the pressure inside the chamber. As a result, the movement of the fluid 55 from the buffer space 54 to the heat transfer space 53 is not hindered.

[0062] Furthermore, according to this embodiment, the buffer space 54 is slit-shaped. As a result, it is possible to store the fluid 55.

[0063] Furthermore, according to this embodiment, the buffer space 54 is perforated. As a result, it is possible to store the fluid 55.

[0064] Furthermore, according to this embodiment, the buffer space 54a is formed in such a way that the cross-sectional area on the heat transfer space 53 side is increased. As a result, the fluid 55 within the buffer space 54a can more easily fill the heat transfer space 53.

[0065] Furthermore, according to this embodiment, the buffer space 54b is formed such that the cross-sectional area on the side opposite to the heat transfer space 53 is increased. As a result, the storage capacity of the fluid 55 in the heat transfer space 53 and the buffer space 54b can be increased.

[0066] Furthermore, according to this embodiment, the heat transfer space 53 is formed in an annular shape in the circumferential direction of the base. As a result, the contact area between the cooling plate 14 and the upper electrode 18 can be ensured.

[0067] Further, according to the present embodiment, the heat transfer space 53 is formed in a plurality of island shapes that are independent of each other in the circumferential direction of the susceptor. As a result, the heat transfer space can be easily formed while avoiding the connection portions of the flow path 15 inside the cooling plate 14 and the pipe 16, the gas supply port 13a, and the like.

[0068] The embodiments disclosed this time are to be considered as illustrative and not restrictive in all aspects. The embodiments described above can be changed or modified without departing from the scope and spirit of the request protection.

[0069] Further, in the above-described embodiment, the plasma processing apparatus 1 that uses a capacitively coupled plasma as a plasma source to perform etching and the like on the substrate W is described as an example, but the disclosed technology is not limited thereto. If it is an apparatus that processes the substrate W using plasma, the plasma source is not limited to a capacitively coupled plasma, and any plasma source such as an inductively coupled plasma, a microwave plasma, a magnetron plasma, or the like can be used.

[0070] Further, in the above-described embodiment, the plasma processing apparatus 1 is described as an example of a substrate processing apparatus, but is not limited thereto. For example, it can be applied to a thermal CVD (Chemical Vapor Deposition) apparatus that does not use plasma.

[0071] Further, in the above-described embodiment, the heat transfer space 53 is provided at the peripheral edge portion of the cooling plate 14, but is not limited thereto. For example, depending on the fixing method of the upper electrode 18 to the cooling plate 14, it can be provided at a portion where a gap is generated due to deformation of the cooling plate 14. For example, in a case where a gap is generated at the center portion of the cooling plate 14, the heat transfer space 53 can be provided at the center portion.

[0072] Further, in the above-described embodiment, the heat transfer space 53 is provided between the lower surface of the cooling plate 14 and the upper surface of the upper electrode 18, but is not limited thereto. For example, in a case where the cooling plate 14 is divided into a lower member 14a and an upper member 14b, the heat transfer space 53 can be provided between the upper surface of the lower member 14a and the lower surface of the upper member 14b. In this case, the upper member 14b can be regarded as a susceptor, and the lower member 14a can be regarded as a part of an upper electrode.

[0073] Further, the present application can also take the following configuration. (1)

[0075] An upper top plate configured at an upper portion of a chamber, having:

[0076] a susceptor;

[0077] The upper electrode is disposed on the lower surface side of the aforementioned base; and

[0078] A heat-conducting medium is disposed between the lower surface of the base and the upper surface of the upper electrode, filling the heat transfer space surrounded by a seal.

[0079] The aforementioned base has a buffer space that communicates with the aforementioned heat transfer space on its lower surface adjacent to the aforementioned heat transfer space.

[0080] The aforementioned heat-conducting medium is also filled in a portion of the aforementioned buffer space. (2)

[0082] According to the upper top plate recorded in (1), among which,

[0083] The aforementioned heat-conducting medium contains a liquid substance. (3)

[0085] According to the upper top plate described in (2), among which,

[0086] The aforementioned heat-conducting medium includes heat transfer within the aforementioned heat transfer space. (4)

[0088] According to the upper top plate described in (2) or (3), where,

[0089] The liquid substance described above is vacuum grease. (5)

[0091] According to any one of the descriptions in (1) to (4), the upper top plate, among which,

[0092] The aforementioned buffer space is connected to the injection path, and the aforementioned injection path is connected to the outside of the aforementioned base. (6)

[0094] According to the upper top plate described in (5), among which,

[0095] The injection path described above is connected to the interior of the aforementioned chamber. (7)

[0097] According to the upper top plate described in (6), among which,

[0098] The pressure inside the aforementioned buffer space varies with the pressure inside the aforementioned chamber. (8)

[0100] According to any one of the descriptions in (1) to (7), the upper top plate, among which,

[0101] The aforementioned buffer space is slit-shaped. (9)

[0103] The upper ceiling according to any one of (1) to (7), wherein

[0104] The buffer space is a hole. (10)

[0106] The upper ceiling according to (8) or (9), wherein

[0107] The buffer space is formed in a manner that the cross-sectional area of the side opposite to the heat transfer space increases. (11)

[0109] The upper ceiling according to (8) or (9), wherein

[0110] The buffer space is formed in a manner that the cross-sectional area of the side opposite to the heat transfer space increases. (12)

[0112] The upper ceiling according to any one of (1) to (11), wherein

[0113] The heat transfer space is formed in a ring shape in the circumferential direction of the base. (13)

[0115] The upper ceiling according to any one of (1) to (11), wherein

[0116] The heat transfer space is formed in a plurality of island shapes independent of each other in the circumferential direction of the base. (14)

[0118] A substrate processing apparatus includes:

[0119] a chamber; and

[0120] an upper ceiling disposed at an upper portion of the chamber,

[0121] The upper ceiling has:

[0122] a base;

[0123] an upper electrode disposed at a lower surface side of the base; and

[0124] a thermally conductive medium provided between a lower surface of the base and an upper surface of the upper electrode, filled in a heat transfer space surrounded by a seal member,

[0125] The base is formed with a buffer space communicating with the heat transfer space at the lower surface adjacent to the heat transfer space,

[0126] The thermally conductive medium is also filled in a part of the buffer space.

[0127] Explanation of Reference Numerals

[0128] 1 Plasma processing apparatus

[0129] 10 Plasma processing chamber

[0130] 13 Showerhead

[0131] 14 Cooling plate (susceptor)

[0132] 15 Flow path

[0133] 18 Upper electrode

[0134] 50, 51 Seal

[0135] 52 Heat transfer fin

[0136] 53 Heat transfer space

[0137] 54, 54a, 54b Buffer space

[0138] 55 Flowing body

[0139] 56 Through hole

Claims

1. An upper ceiling, characterized by: the upper ceiling being capable of being disposed in an upper portion of a chamber, comprising: a base; an upper electrode disposed on a lower surface side of the base; and a heat conducting medium disposed between a lower surface of the base and an upper surface of the upper electrode, filled in a heat transfer space surrounded by a seal, the base being formed with a buffer space communicating with the heat transfer space on the lower surface adjoining the heat transfer space, the heat conducting medium being further filled in a part of the buffer space.

2. The upper ceiling according to claim 1, characterized by: the heat conducting medium including a liquid substance.

3. The upper ceiling according to claim 2, characterized by: the heat conducting medium including a heat transfer sheet disposed in the heat transfer space.

4. The upper ceiling according to claim 2 or 3, characterized by: the liquid substance being a vacuum grease.

5. The upper ceiling according to claim 1, characterized by: the buffer space being connected to an injection path, the injection path communicating with an outside of the base.

6. The upper ceiling according to claim 5, characterized by: the injection path communicating with an inside of the chamber.

7. The upper ceiling according to claim 6, characterized by: a pressure inside the buffer space varying with a pressure inside the chamber.

8. The upper ceiling according to claim 1, characterized by: the buffer space being in a slit shape.

9. The upper ceiling according to claim 1, characterized by: the buffer space being in a hole shape.

10. The upper ceiling according to claim 8 or 9, characterized by: the buffer space being formed in a manner that a cross-sectional area on the heat transfer space side increases.

11. The upper ceiling according to claim 8 or 9, characterized by: the buffer space being formed in a manner that a cross-sectional area on a side opposite to the heat transfer space increases.

12. The upper ceiling according to claim 1, characterized by: the heat transfer space being formed in a ring shape in a circumferential direction of the base.

13. The upper ceiling according to claim 1, characterized by: the heat transfer space being formed in a plurality of island shapes each independent in the circumferential direction of the base, 14. A substrate processing apparatus, characterized by, comprising: a chamber; and an upper ceiling disposed in an upper portion of the chamber, the upper ceiling having: a base; an upper electrode disposed on a lower surface side of the base; and a heat conducting medium disposed between a lower surface of the base and an upper surface of the upper electrode, filled in a heat transfer space surrounded by a seal, the base being formed with a buffer space communicating with the heat transfer space on the lower surface adjoining the heat transfer space, the heat conducting medium being further filled in a part of the buffer space. ​ ​

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