LED device, light-emitting module and display device
Patent Information
- Application Number
- CN202280004710.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2022-11-30
- Publication Date
- 2026-01-16
AI Technical Summary
During the batch transfer process of Micro LED, due to the large spot of the excimer laser, the air flow generated during laser irradiation is uneven, which can easily cause the chip to shift and affect the display effect of the display.
Design the isolation structure of the LED device, including a retaining wall structure and a wing-shaped structure, and set it between adjacent LED chips to reduce the impact of airflow during laser irradiation and prevent chip deviation. The isolation structure can be extended to form a grid on the front side of the growth substrate or along the sidewall to disperse airflow and maintain alignment of the chip flying distance.
It effectively improves the yield rate of Micro LED batch transfer, avoids chip offset, simplifies the process steps and saves costs.
Smart Images
Figure CN121359619A_ABST
Abstract
Description
LED device, light-emitting module and display device Technical Field
[0001] The present application relates to the technical field of semiconductor devices, and in particular to an LED device, a light-emitting module and a display device. Background Art
[0002] LEDs are widely valued for their high luminous efficiency, long lifespan, safety, reliability, and environmental friendliness and energy efficiency. Micro LEDs are commonly used in display screens. Micro LEDs are typically transferred to display substrates using a mass transfer method. Among current micro LED transfer and / or repair technologies, laser lift-off and transfer using excimer lasers are a key transfer method. When using an excimer laser for laser lift-off or laser transfer, a relatively large spot (e.g., 2 x 2 mm) is typically irradiated onto a wafer or substrate carrying micro LEDs, transferring the micro LEDs in the corresponding area all at once. Due to the large spot size, all micro LED chips in a relatively large area can be transferred at once. During chip transfer, laser irradiation generates expanding gas. The airflow at the edges of the spot differs from that at the center, often leading to chip shifting, which in turn affects the display quality. Technical issues
[0003] Therefore, it is necessary to provide a technology that can improve the transfer yield of batch transferred chips. Technical Solutions
[0004] In view of the aforementioned problems and shortcomings in prior art Micro LED batch transfer technology, the present application provides an LED device, a light-emitting module, and a display device. The LED device forms a spacing structure between adjacent LED chips. This spacing structure can reduce the impact of airflow generated by laser irradiation on the LED chips, thereby improving the batch transfer yield of LED chips.
[0005] One embodiment of the present application provides an LED device, comprising:
[0006] a growth substrate having a front surface and a back surface disposed opposite to each other;
[0007] A plurality of LED chips are formed on the growth substrate, each of the LED chips comprising an epitaxial layer extending from the front surface of the growth substrate, the epitaxial layer comprising at least a semiconductor layer of a first conductivity type, an active layer, and a semiconductor layer of a second conductivity type stacked in sequence from the front surface of the growth substrate;
[0008] An isolation structure extends from the front surface of the growth substrate, and the isolation structure is arranged between adjacent LED chips.
[0009] Optionally, the isolation structure is configured as a retaining wall structure, the retaining wall structure extends along a first direction and a second direction on the front surface of the growth substrate to form a grid structure, and the LED chip is located in a grid of the grid structure.
[0010] Optionally, the distance between the retaining wall structure and the adjacent LED chips is between 1 μm and 10 μm.
[0011] Optionally, the height of the retaining wall structure extending from the front surface of the growth substrate is between 1 μm and 8 μm.
[0012] Optionally, the width of the retaining wall structure in a direction perpendicular to its extension direction is between 0.1 μm and 2 μm.
[0013] Optionally, the isolation structure is configured as a wing-shaped structure, which is provided on the side wall of each LED chip and extends in a direction perpendicular to the side wall, and the wing-shaped structures on the side walls of adjacent LED chips are spaced apart.
[0014] Optionally, the wing-shaped structure is arranged on a group of opposite side walls of each of the LED chips, or on four side walls of each of the LED chips.
[0015] Optionally, a height of the wing-shaped structure extending from the front surface of the growth substrate is between 2 μm and 7 μm.
[0016] Optionally, the wing-shaped structure extends over a length ranging from 2 μm to 10 μm in a direction perpendicular to the sidewall.
[0017] Optionally, the width of the wing-shaped structure in a direction parallel to the sidewall where the wing-shaped structure is located is between 1 μm and 2 μm.
[0018] Optionally, the isolation structure is the epitaxial layer extending from the front surface of the growth substrate.
[0019] An embodiment of the present application provides a light-emitting module, comprising:
[0020] A substrate, wherein the front surface of the substrate has a die-bonding area, the back surface of the substrate is provided with a solder pad, a circuit layer is formed in the substrate, and the solder pad is electrically connected to the die-bonding area via the circuit layer;
[0021] At least one light-emitting element is fixed to the die-bonding region, and the light-emitting element is transferred from the LED device described in the present application.
[0022] Optionally, a wing-shaped structure is formed on at least one set of oppositely disposed sidewalls of the LED chip. Another embodiment of the present application provides a display device comprising: a circuit substrate and a light-emitting device disposed on the circuit substrate, the light-emitting device comprising LED chips and / or at least one light-emitting module transferred in batches to the circuit substrate, wherein the LED chips are transferred from the LED device provided in the present application.
[0023] Optionally, a wing-shaped structure is formed on at least one group of oppositely disposed side walls of the LED chip. Beneficial effects
[0024] The LED device of the present application includes a growth substrate and a plurality of LED chips and an isolation structure formed on the growth substrate, wherein each LED chip includes an epitaxial layer extending from the front surface of the growth substrate, and the epitaxial layer includes at least a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer stacked in sequence on the growth substrate; the isolation structure extends from the front surface of the growth substrate and is disposed between adjacent LED chips. The isolation structure can reduce the impact of the airflow generated when the laser irradiates the LED chip on the LED chip, preventing the LED chip from shifting. At the same time, the above-mentioned isolation structure can be formed by designing different mask plates during the LED chip formation process, without adding additional steps and without incurring additional costs.
[0025] The isolation structure can be formed as a retaining wall structure or a wing-like structure, wherein the retaining wall structure is formed between adjacent LED chips and spaced apart from the LED chips, isolating each LED chip from surrounding LED chips. This prevents edge chip tilting caused by uneven airflow distribution at the center and edges of the spot during batch transfer of LED chips using an excimer laser, thereby improving the batch transfer yield. The wing-like structure is formed on at least one set of opposing sidewalls of each LED chip, and can be formed on one set of opposing sidewalls of the LED chip, or on all four sidewalls of the LED chip. This wing-like structure can disperse airflow, reducing the impact of airflow generated by laser irradiation on the sides of the LED chip, maintaining the alignment of the chip's flight distance during laser transfer, and thus improving the batch transfer yield. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] The specific implementation of this application will be described in detail below with reference to the accompanying drawings.
[0027] FIG. 1 is a schematic diagram showing chip tilting during LED chip transfer using an excimer laser in the prior art.
[0028] FIG2 a shows a schematic structural diagram of an LED device provided in Example 1 of the present application.
[0029] FIG2 b is a schematic structural diagram of the epitaxial layer of the LED device according to an embodiment of the present application.
[0030] FIG3 is a schematic diagram showing a top view of the LED device shown in FIG2a.
[0031] 4 and 5 are schematic diagrams showing a method of forming the LED device shown in FIG. 2 a .
[0032] FIG6 and FIG7 are schematic diagrams showing the process of transferring the LED chip in the structure shown in FIG2a by laser.
[0033] FIG8 shows a schematic structural diagram of an LED device provided in Example 2 of the present application.
[0034] FIG9 is a schematic diagram showing a top view of the LED device shown in FIG8 .
[0035] FIG10 is a schematic top view of another alternative embodiment of the LED device shown in FIG8 .
[0036] FIG. 11 is a schematic diagram showing a method of forming the LED device shown in FIG. 9 .
[0037] FIG. 12 is a schematic diagram showing a method of forming the LED device shown in FIG. 10 .
[0038] FIG13 and FIG14 are schematic diagrams showing the process of transferring the LED chip in the structure shown in FIG8 by laser.
[0039] FIG15 is a schematic structural diagram of the light-emitting module provided in Example 3 of the present application.
[0040] FIG16 is a schematic structural diagram of a display device provided in Example 4 of the present application.
[0041] [Description of Reference Numerals]
[0042] 10, substrate; 11, LED chip; 20, base plate; 100, growth substrate; 101, epitaxial layer; 1011, LED chip; 1012, retaining wall structure; 1013, wing structure; 1014, first conductivity type semiconductor layer; 1015, active layer; 1016, second conductivity type semiconductor layer; 1017, first electrode; 1018, second electrode; 103, first patterned photoresist layer; 1030, first opening; 104 , second patterned photoresist layer; 1040, second opening; 105, third patterned photoresist layer; 1050, 110, front side; 120, back side; third opening; 200, carrier substrate; 300, light-emitting module; 301, substrate; 3011, solid crystal area; 3012, circuit layer; 3013, pad; 302, light-emitting element; 303, front side; 304, back side; 400, display device; 401 circuit substrate; 402, light-emitting device. Modes for Carrying Out the Invention
[0043] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below with reference to the accompanying drawings.
[0044] In order to enable those skilled in the art to better understand the technical solutions of this application, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts should fall within the scope of protection of this application.
[0045] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequential order. It should be understood that the terms used in this way are interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.
[0046] It should also be noted that the division of multiple embodiments in this application is only for the convenience of description and should not constitute a special limitation. The features in various embodiments can be combined and referenced to each other without contradiction.
[0047] As shown in Figure 1, conventional micro LED transfer and / or repair techniques employ excimer lasers for laser lift-off or laser transfer. The laser irradiates substrate 10 carrying micro LEDs, transferring LED chips 11 in corresponding areas all at once. During chip transfer, laser irradiation of LED chips 11 generates expanding gas. The airflow released at the edge of the spot differs from that at the center, leading to chip shifting as shown in Figure 1, which often occurs during the process of LED chips 11 falling from substrate 10 and flying toward baseplate 20.
[0048] Example 1
[0049] To address the above-mentioned drawbacks, this embodiment provides an LED device. As shown in FIG2a , the LED device of this embodiment includes a growth substrate 100, a plurality of LED chips 1011 formed on the growth substrate 100, and an isolation structure located on the growth substrate 100. The growth substrate 100 has a front surface 110 and a back surface 120 disposed opposite each other. The isolation structure and the LED chips 1011 are both located on the front surface 110 of the growth substrate 100, and the isolation structure is disposed between adjacent LED chips 1011.
[0050] In an optional embodiment, the growth substrate 100 may be any growth substrate suitable for epitaxial growth, such as a sapphire substrate, a GaAs substrate, a SiC substrate, etc. The epitaxial layer 101 may be a GaN-based epitaxial layer, an AlGaInP-based epitaxial layer, etc. In this embodiment, the growth substrate 100 is a sapphire substrate, and the epitaxial layer 101 is a GaN-based epitaxial layer. As shown in FIG2b , the epitaxial layer 101 includes at least a first conductivity type semiconductor layer 1014, an active layer 1015, and a second conductivity type semiconductor layer 1016, which are stacked in sequence from the front surface of the growth substrate 100. Preferably, in this embodiment, the first conductivity type semiconductor layer 1014 is an N-type GaN layer, the active layer 1015 is a quantum well layer, and the second conductivity type semiconductor layer 1016 is a P-type GaN layer. In addition, the LED chip 1011 further includes an electrode structure. As shown in FIG. 2 b , the electrode structure includes a first electrode 1017 electrically connected to the first conductivity type semiconductor layer 1014 and a second electrode 1018 electrically connected to the second conductivity type semiconductor layer 1016 .
[0051] In this embodiment, as shown in Figures 2a and 3, the isolation structure is formed as a retaining wall structure 1012. This retaining wall structure 1012 extends along the front surface 110 of the growth substrate 100, that is, extends from the front surface 110 of the growth substrate 100 in the Z direction as shown in Figure 2a. As shown in Figure 2a, in the Z direction, the retaining wall structure 1012 has a height H1 ranging from 1 μm to 8 μm. Preferably, this height H1 is the same as or slightly higher than the height of the LED chip 1011. Preferably, the retaining wall structure 1012 extends along the front surface 110 of the growth substrate 100 in a first direction and a second direction, that is, extends along the X and Y directions as shown in Figure 3, forming a grid-like structure on the front surface of the growth substrate 100. As shown in Figure 3, the LED chip 1011 is located within a grid of the grid-like structure. The LED chips 1011 and the retaining wall structures 1012 are spaced apart. A distance D is defined between the retaining wall structures 1012 and the sidewalls of adjacent LED chips 1011, with the distance D ranging from 1 μm to 10 μm. As shown in FIG3 , the retaining wall structures 1012 have a width W1 perpendicular to their extension direction, with W1 ranging from 0.1 μm to 2 μm. Specifically, retaining wall structures 1012 extending in the X direction have a width W1 in the Y direction; retaining wall structures 1012 extending in the Y direction have a width W1 in the X direction.
[0052] This embodiment also describes a method for making the above-mentioned retaining wall structure 1012. As shown in FIG4 , an epitaxial layer 101 is first grown on the front surface 110 of the growth substrate 100. For example, an N-type GaN layer, a quantum well layer, and a P-type GaN layer are sequentially grown on a sapphire substrate to form a GaN-based epitaxial layer. Then, as shown in FIG5 , a first patterned photoresist layer 103 is formed above the epitaxial layer 101. The first patterned photoresist layer 103 extends in the X direction and the Y direction to form a first opening 1030. The epitaxial layer 101 is etched along the first opening 1030 to form the retaining wall structure 1012 extending in the X direction and the Y direction to form a grid-like structure as shown in FIG3 . The step of forming the above-mentioned retaining wall structure 1012 can be performed separately or simultaneously when the LED chip 1011 on the growth substrate 100 is separated. Therefore, the retaining wall structure 1012 and the LED chip 1011 can both be the epitaxial layer 101.
[0053] As shown in FIG6 , when an excimer laser is used to transfer the LED chip 1011 of this embodiment, the laser irradiates the back surface 120 of the growth substrate 100, causing the GaN layer between the LED chip 1011 and the front surface 110 of the growth substrate 100 to decompose, generating a small amount of nitrogen. As shown in FIG7 , the LED chip 1011 separates from the growth substrate 100 and flies toward the carrier substrate 200 under the action of the longitudinal airflow of nitrogen. The retaining wall structure 1012 isolates each LED chip 1011 from the surrounding chips, and the longitudinal airflow is confined between the retaining walls, reducing the impact of the longitudinal airflow on the LED chip 1011, thereby ensuring that the LED chip 1011 remains stable during the process of flying toward the carrier substrate 200 without deviation or tilt, thereby ensuring the transfer yield. In an optional embodiment, the above-mentioned carrier substrate 200 can be a circuit substrate or a carrier plate for temporarily carrying the LED chip 1011.
[0054] Example 2
[0055] This embodiment also provides an LED device. As shown in FIG8 , the LED device of this embodiment also includes a growth substrate 100, a plurality of LED chips 1011 formed on the growth substrate 100, and an isolation structure located on the growth substrate 100. The growth substrate 100 has a front surface 110 and a back surface 120 disposed opposite each other. Also as shown in FIG8 , in this embodiment, the isolation structure is formed as a wing-like structure 1013 located on the sidewalls of the LED chips 1011. The wing-like structure 1013 extends perpendicularly to the sidewalls of the LED chips 1011, and the wing-like structures 1013 on the sidewalls of adjacent LED chips 1011 are spaced apart. As shown in FIG8 , the wing-like structure 1013 extends from the front surface 110 of the growth substrate 100 in the Z direction and has a height H2 in the Z direction ranging from 2 μm to 7 μm. Preferably, the height of the wing-like structure 1013 extending from the growth substrate 100 is less than the height of the LED chips 1011.
[0056] As shown in FIG9 , in an alternative embodiment of this embodiment, wing-like structures 1013 are formed on two opposing sidewalls of the LED chip 1011 extending in the Y direction. The wing-like structures 1013 extend in the X direction, extending beyond the sidewalls of the LED chip 1011. The wing-like structures 1013 have a length L in the X direction and a width W2 in the Y direction. The length L ranges from 2 μm to 10 μm, and the width W2 ranges from 1 μm to 2 μm.
[0057] In an alternative embodiment of this embodiment, the formation process of the wing-like structure 1013 shown in FIG9 is also described. As shown in FIG11, a second patterned photoresist layer 104 is formed above the epitaxial layer 101. The second patterned photoresist layer 104 is formed with a second opening 1040. The epitaxial layer 101 is etched through the second opening 1040 to form the wing-like structure 1013 shown in FIG9. The wing-like structure 1013 can also be formed at the same time as the LED chips 1011 are separated, thereby simplifying the process steps and saving costs.
[0058] As shown in FIG10 , in an alternative embodiment to this embodiment, wing-like structures 1013 are formed on the four sidewalls of the LED chip 1011 and extend perpendicularly to the sidewalls, extending beyond the sidewalls of the LED chip 1011. On the sidewalls extending in the Y direction, the wing-like structures 1013 have a length L in the X direction and a width W2 in the Y direction. Similarly, on the sidewalls extending in the X direction, the wing-like structures 1013 have a length L in the Y direction and a width W2 in the X direction. The length L ranges from 2 μm to 10 μm, and the width W2 ranges from 1 μm to 2 μm.
[0059] In an alternative embodiment of this embodiment, the formation process of the wing-like structure 1013 shown in FIG10 is also described. As shown in FIG12, a third patterned photoresist layer 105 is formed above the epitaxial layer 101. The third patterned photoresist layer 105 is formed with a third opening 1050. The epitaxial layer 101 is etched through the third opening 1050 to form the wing-like structure 1013 shown in FIG10. The wing-like structure 1013 can also be formed at the same time as the LED chips 1011 are separated, thereby simplifying the manufacturing process and saving costs.
[0060] As shown in FIG13 , when an excimer laser is used to transfer the LED chip 1011 of this embodiment, the laser irradiates the back surface 120 of the growth substrate 100, causing the GaN layer between the LED chip 1011 and the front surface 110 of the growth substrate 100 to decompose, generating a small amount of nitrogen. As shown in FIG14 , the LED chip 1011 separates from the growth substrate 100 and flies toward the carrier substrate 200 under the action of the longitudinal airflow of nitrogen. Under the action of the wing-shaped structure 1013, the longitudinal airflow is dispersed, reducing the impact of the longitudinal airflow on the LED chip 1011, thereby ensuring that the LED chip 1011 remains stable during the process of flying toward the carrier substrate 200 without deviation or tilt, thereby ensuring the transfer yield. In an optional embodiment, the above-mentioned carrier substrate 200 can be a circuit substrate or a carrier plate for temporarily carrying the LED chip 1011.
[0061] Example 3
[0062] The present embodiment provides a light-emitting module. As shown in FIG15 , the light-emitting module 300 of the present embodiment includes a substrate 301, which can be a ceramic substrate, a copper substrate, or other substrate suitable for bonding light-emitting elements. In the present embodiment, taking a ceramic substrate as an example, the front side 303 of the substrate 301 is provided with a solid crystal area 3011, and the back side 304 is provided with a soldering pad 3013. A circuit layer 3012 is formed in the substrate 301, and the circuit layer 3012 electrically connects the solid crystal area 3011 with the soldering pad 3013. The solid crystal area 3011 is used for soldering light-emitting elements, such as LED chips. The soldering pad 3013 is used to connect an external circuit, for example, it can be soldered to a PCB substrate provided with a circuit layer.
[0063] As shown in FIG15 , the light-emitting module 300 of this embodiment further includes at least one light-emitting element 302, which is fixedly soldered to the die-bonding region 3011. The light-emitting element 302 can be an LED chip. Preferably, the LED chip is transferred from the LED device provided in Example 1 or Example 2, or a mixture of the LED devices provided in Example 1 and Example 2. When the LED chip includes the LED chip 1011 transferred from the LED device provided in Example 2 of the present application, a wing-shaped structure 1013 is formed on at least one set of opposing sidewalls of the LED chip 1011.
[0064] Example 4
[0065] This embodiment provides a display device. As shown in FIG16 , the display device 400 includes a circuit substrate 401 and a light-emitting device 402 disposed on the circuit substrate 401. The light-emitting device 402 includes LED chips transferred in batches to the circuit substrate 401. The LED chips may be LED chips 1011 transferred from the LED device provided in the first embodiment of the present application, or LED chips 1011 transferred from the LED device provided in the second embodiment of the present application, or a combination of LED chips transferred from the LED devices provided in both the first and second embodiments of the present application.
[0066] When the LED chip includes the LED chip 1011 transferred from the LED device provided in the second embodiment of the present application, a wing-shaped structure 1013 is formed on at least one set of opposite side walls of the LED chip 1011 .
[0067] The above description is merely a preferred embodiment of the present application and does not constitute any form of limitation to the present application. Although the present application has been disclosed as a preferred embodiment, it is not intended to limit the present application. Any technician familiar with this profession can make slight changes or modifications to equivalent embodiments of the technical contents disclosed above without departing from the scope of the technical solution of the present application. However, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application are still within the scope of the technical solution of the present application.
Claims
1. An LED device, characterized in that: include: a growth substrate having a front surface and a back surface disposed opposite to each other; A plurality of LED chips are formed on the growth substrate, each of the LED chips comprising an epitaxial layer extending from the front surface of the growth substrate, the epitaxial layer comprising at least a semiconductor layer of a first conductivity type, an active layer, and a semiconductor layer of a second conductivity type stacked in sequence from the front surface of the growth substrate; An isolation structure extends from the front surface of the growth substrate, and the isolation structure is arranged between adjacent LED chips.
2. The LED device according to claim 1, wherein The isolation structure is configured as a retaining wall structure, which extends along a first direction and a second direction on the front surface of the growth substrate to form a grid structure, and the LED chip is located in a grid of the grid structure.
3. The LED device according to claim 2, characterized in that The distance between the retaining wall structure and the adjacent LED chips is between 1 μm and 10 μm.
4. The LED device according to claim 2, wherein: The height of the retaining wall structure extending from the front surface of the growth substrate is between 1 μm and 8 μm.
5. The LED device according to claim 2, wherein: The width of the retaining wall structure in a direction perpendicular to its extension direction is between 0.1 μm and 2 μm.
6. The LED device according to claim 1, wherein The isolation structure is configured as a wing-shaped structure, which is provided on the side wall of each LED chip and extends in a direction perpendicular to the side wall. The wing-shaped structures on the side walls of adjacent LED chips are spaced apart.
7. The LED device according to claim 6, characterized in that The wing-shaped structures are arranged on a group of opposite side walls of each of the LED chips, or on four side walls of each of the LED chips.
8. The LED device according to claim 6, characterized in that: The height of the wing-shaped structure extending from the front surface of the growth substrate is between 2 μm and 7 μm.
9. The LED device according to claim 6, wherein: The wing-shaped structure extends in a direction perpendicular to the sidewall with a length ranging from 2 μm to 10 μm.
10. The LED device according to claim 6, characterized in that The width of the wing-shaped structure in a direction parallel to the sidewall where the wing-shaped structure is located is between 1 μm and 2 μm.
11. The LED device according to claim 1, wherein The isolation structure is the epitaxial layer extending from the front surface of the growth substrate.
12. A light emitting module, characterized in that: include: A substrate, wherein the front surface of the substrate has a die-bonding area, the back surface of the substrate is provided with a solder pad, a circuit layer is formed in the substrate, and the solder pad is electrically connected to the die-bonding area via the circuit layer; At least one light-emitting element is fixed to the die-bonding region, and the light-emitting element is transferred from the LED device according to any one of claims 1 to 11.
13. The light emitting module according to claim 12, wherein: The LED chip is transferred from the LED device according to any one of claims 1 and 6 to 11, wherein a wing-shaped structure is formed on at least one group of oppositely disposed side walls of the LED chip.
14. A display device, characterized in that: include: A circuit substrate and a light-emitting device arranged on the circuit substrate, wherein the light-emitting device includes LED chips and / or at least one light-emitting module transferred in batches to the circuit substrate, wherein the LED chips are transferred from the LED device according to any one of claims 1 to 11, and the light-emitting module is the light-emitting module according to claim 12.
15. The display device according to claim 14, wherein: The LED chip is transferred from the LED device according to any one of claims 1 and 6 to 11, wherein a wing-shaped structure is formed on at least one group of oppositely disposed side walls of the LED chip.