Auxiliary film forming device and film forming system

Abstract

The embodiment of the invention provides an auxiliary film forming device and a film forming system. The auxiliary film forming device comprises a vacuum cavity and an auxiliary film forming structure, the surface of the vacuum cavity comprises a first surface, a second surface and a side surface; the auxiliary film forming structure comprises: a first plasma source assembly located on the side surface; the first plasma source assembly comprises a first electrode component and a first connecting part, and the first electrode component comprises a first polar plate and a first electrode; the first polar plate comprises a bombardment side and a non-bombardment side, the first connecting part is located on one side of the non-bombardment side, and the first electrode is located between the first connecting part and the first polar plate; the gas path assembly is used for providing gas to the bombardment side of the first plasma source assembly and transmitting at least part of ions formed by gas discharge to the substrate. The first plasma source assembly is arranged, and the first electrode component arranged in the first plasma source assembly can improve the uniformity of the auxiliary film forming device in the process of carrying out partial ion deposition on the substrate.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of vacuum processing, in particular to an auxiliary film forming device and a film forming system. BACKGROUND

[0002] In the field of magnetron sputtering film forming, integrated inductively coupled plasma sources (ICP) including group coils are widely used, and can achieve normal production under conventional film forming requirements. Inductively coupled plasma sources use alternating electromagnetic fields generated by high-frequency inductive coupling coils and working gas (such as argon) to generate low-temperature plasma. However, in the inductively coupled plasma source, the coil density between adjacent different groups of discharge coils is often small, which will easily lead to a decrease in the plasma concentration at this place, thereby reducing the uniformity of the plasma treatment for the substrate and possibly affecting the film layer quality and product yield. SUMMARY

[0003] Embodiments of the present application provide an auxiliary film forming device and a film forming system, by providing a first plasma source assembly, and a first electrode plate provided in the first plasma source assembly can improve the uniformity of the auxiliary film forming device when performing plasma treatment on the substrate.

[0004] In a first aspect, the present application provides an auxiliary film forming device, comprising a vacuum cavity and an auxiliary film forming structure, at least part of the auxiliary film forming structure is arranged in the vacuum cavity;

[0005] The surface of the vacuum cavity comprises a first surface, a second surface and a side surface, the first surface and the second surface are oppositely arranged along a first direction, the side surface extends along the first direction, and the side surface connects the first surface and the second surface;

[0006] The auxiliary film forming structure comprises:

[0007] A first plasma source assembly is located on the side surface; the first plasma source assembly comprises a first electrode member and a first connecting portion, the first electrode member comprises a first electrode plate and a first electrode, the first electrode plate comprises a bombardment side and a non-bombardment side, the first connecting portion is located on one side of the non-bombardment side, and the first electrode is located between the first connecting portion and the first electrode plate;

[0008] A gas path assembly is located on the surface of the vacuum cavity or on the first plasma source assembly, and is used to provide gas to the bombardment side of the first plasma source assembly.

[0009] Optionally, the first electrode plate comprises a quartz electrode plate.

[0010] Optionally, the auxiliary film-forming structure further comprises a magnet assembly; the magnet assembly comprises a first magnet unit, the first magnet unit is located between the first electrode member and the first connecting portion;

[0011] The first magnet unit comprises a first magnet and a second magnet, a projection of the first magnet on the first electrode plate surrounds a projection of the second magnet on the first electrode plate; wherein a polarity of the first magnet is opposite to a polarity of the second magnet.

[0012] Optionally, the first magnet comprises two first magnet subparts and two second magnet subparts, the first magnet subparts extend along a second direction, the second magnet subparts extend along a third direction, the first magnet subparts and the second magnet subparts are connected in sequence;

[0013] The second magnet comprises a third magnet subpart and two fourth magnet subparts, the third magnet subpart extends along the second direction, the fourth magnet subparts extend along the third direction; along the second direction, the two fourth magnet subparts are located on two sides of the third magnet subpart;

[0014] Wherein, the second direction and the third direction intersect, and are parallel to a plane where the first electrode plate is located.

[0015] Optionally, the first magnet comprises a first permanent magnet, and the second magnet comprises a second permanent magnet.

[0016] Optionally, the auxiliary film-forming structure further comprises a second plasma source assembly, the second plasma source assembly and the first plasma source assembly are arranged adjacently or at intervals on the same side surface;

[0017] The second plasma source subassembly comprises a second electrode member and a second connecting portion, the second electrode member comprises a second electrode plate and a second electrode; the second electrode plate comprises a bombardment side and a non-bombardment side, the second connecting portion is located on one side of the non-bombardment side, and the second electrode is located between the second connecting portion and the second electrode plate;

[0018] The magnet assembly further comprises a second magnet assembly, the second magnet assembly is located between the second electrode plate and the second connecting portion; the second magnet unit comprises the first magnet and the second magnet, a projection of the second magnet on the second electrode plate surrounds a projection of the first magnet on the second electrode plate.

[0019] Optionally, the auxiliary film-forming structure further comprises a magnet base, the magnet base is located on a side of the magnet assembly away from the first electrode member; the first magnet and the second magnet are arranged at the magnet base;

[0020] The auxiliary film forming structure further comprises a conductive copper block between the first connecting part and the first pole plate to conduct the first connecting part and the first pole plate.

[0021] Optionally, the auxiliary film forming structure further comprises a positioning copper block between the first magnet unit and the first electrode to conduct the first connecting part and the first electrode and position the first magnet unit and the first electrode member.

[0022] Optionally, the auxiliary film forming structure further comprises a cooling assembly.

[0023] The cooling assembly comprises a cooling copper plate between the positioning copper block and the first electrode member, and the cooling copper plate comprises a cooling cavity in which a flow medium is arranged to control the temperature of the first electrode member.

[0024] Optionally, the first electrode reuses the cooling copper plate.

[0025] In a second aspect, the present application provides a film forming system comprising the auxiliary film forming device of any one of the first aspect.

[0026] The film forming system further comprises a target plate assembly arranged on the side surface and spaced apart from the first plasma source assembly, and the target plate assembly comprises a silicon target plate.

[0027] The auxiliary film forming device comprises an auxiliary film forming structure arranged in a vacuum chamber, and the auxiliary film forming structure comprises a first plasma source assembly and a gas path assembly. The first plasma source assembly comprises a first electrode member and a first connecting part, and the first electrode member comprises a first pole plate and a first electrode. The first connecting part is arranged on the non-bombardment side of the first pole plate. The gas path assembly is arranged in the vacuum chamber or the first plasma source assembly, and is used to provide gas to the bombardment side of the first plasma source assembly, and transmit at least part of the ions generated by discharging the gas to a substrate. The first pole plate can improve the uniformity of the plasma treatment of the substrate by the auxiliary film forming device. BRIEF DESCRIPTION OF DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the description of the embodiments of the present application will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor on the basis of the contents of the embodiments of the present application and the drawings.

[0029] Figure 1is a structural schematic diagram of an auxiliary film forming device in the prior art;

[0030] Figure 2 is Figure 1 is a schematic diagram of a substrate facing direction of an ion source in the prior art;

[0031] Figure 3 is Figure 1 is a top view schematic diagram of a plasma source and a substrate in the prior art;

[0032] Figure 4 is a structural schematic diagram of an auxiliary film forming device provided by an embodiment of the present application;

[0033] Figure 5 is a top view schematic diagram of an auxiliary film forming device provided by an embodiment of the present application;

[0034] Figure 6 is a first top view schematic diagram of a first plasma source assembly and a substrate provided by an embodiment of the present application;

[0035] Figure 7 is a second top view schematic diagram of a first plasma source assembly and a substrate provided by an embodiment of the present application;

[0036] Figure 8 is a third top view schematic diagram of a first plasma source assembly and a substrate provided by an embodiment of the present application;

[0037] Figure 9 is a structural schematic diagram of a magnet assembly provided by an embodiment of the present application;

[0038] Figure 10 is a top view schematic diagram of another auxiliary film forming device provided by an embodiment of the present application;

[0039] Figure 11 is a fourth top view schematic diagram of a first plasma source assembly and a substrate provided by an embodiment of the present application;

[0040] Figure 12 is a structural schematic diagram of another magnet assembly provided by an embodiment of the present application;

[0041] Figure 13 is a structural schematic diagram of a film forming system provided by an embodiment of the present application. DETAILED DESCRIPTION

[0042] The present application will be further described below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are intended to be merely illustrative of the present application and not in limitation thereof. It should also be noted that, for the purpose of description, only the parts related to the present application are shown in the drawings rather than all the parts.

[0043] In the description of the present application, unless otherwise explicitly specified and limited, the terms "connected", "connected", "fixed" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0044] In the present application, unless otherwise explicitly specified and limited, the "upper" or "lower" of the first feature to the second feature can include that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, the "upper", "above" and "on" of the first feature to the second feature includes that the first feature is directly above and obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. The "below", "under" and "under" of the first feature to the second feature includes that the first feature is directly below and obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.

[0045] In the description of the present embodiment, the terms "upper", "lower", "right", and the like orientation or position relationship are based on the orientation or position relationship shown in the drawings, and are only for the convenience of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first" and "second" are only used to distinguish in the description, and have no special meaning.

[0046] Figure 1 is a schematic view of a structure of an auxiliary film forming device in the prior art, Figure 2 is Figure 1 is a schematic view of the ion source in the prior art, Figure 3 is Figure 1 is a schematic view of the plasma source and the substrate in the prior art, referring to Figures 1 to 3 In the prior art vacuum magnetron sputtering process, the inductively coupled plasma form of ion source is widely used. Specifically, referring to Figures 1 to 3As shown, the plasma source 100' in the prior art auxiliary film forming device 10' generates low-temperature plasma by using the alternating electromagnetic field generated by the high-frequency inductive coupling coil 200' and working gas (such as argon gas, etc.). However, due to the spatial distribution characteristics of the high-frequency inductive coupling coil 200', the electromagnetic field intensity of the first area a1' close to the center of the high-frequency inductive coupling coil 200' is high, while the electromagnetic field intensity of the second area a2' far away from the center of the high-frequency inductive coupling coil 200' is low. Compared with the first area a1' and the second area a2', the electromagnetic field intensity of the area between the two adjacent high-frequency inductive coupling coils 200' is even lower. The aforementioned uneven electromagnetic field also causes the uneven distribution of plasma bombarding on the substrate 300', thereby affecting the thickness uniformity, composition metering ratio, film layer adhesion and other parameters of film forming, and further affecting the quality of the film system.

[0047] To solve the above problems, the embodiment of the present application provides an auxiliary film forming device, comprising a vacuum cavity and an auxiliary film forming structure arranged in the vacuum cavity; wherein the surface of the vacuum cavity comprises a first surface, a second surface and a side surface, the first surface and the second surface are oppositely arranged, and the side surface connects the first surface and the second surface; further, the first plasma source assembly in the auxiliary film forming structure is located on the side surface. Further, the first plasma source assembly comprises a first electrode plate and a first connecting part, when the substrate moves to a corresponding state of the first electrode plate, the first electrode plate can improve the uniformity of the auxiliary film forming device for plasma treatment of the substrate, and improve the working stability of the auxiliary film forming device.

[0048] Figure 4 is a structural schematic diagram of an auxiliary film forming device provided by the embodiment of the present application, Figure 5 is a top view schematic diagram of an auxiliary film forming device provided by the embodiment of the present application, Figure 6 is a first top view schematic diagram of a first plasma source assembly and a substrate provided by the embodiment of the present application, referring to Figures 4 to 6As shown, this embodiment of the invention provides an auxiliary film-forming device 10, which includes a vacuum chamber 100 and an auxiliary film-forming structure 200, with at least a portion of the auxiliary film-forming structure 200 disposed within the vacuum chamber 100. The surface 110 of the vacuum chamber 100 includes a first surface 101, a second surface 103, and a side surface 102. The first surface 101 and the second surface 103 are disposed opposite each other along a first direction X1, and the side surface 102 connects the first surface 101 and the second surface 103. The auxiliary film-forming structure 202 includes a first plasma source assembly 203, which is located on the side surface 102. 203 includes a first electrode component 2031 and a first connecting portion 2032; the first electrode component 2031 includes a first electrode plate 2031a and a first electrode 2031b, the first electrode plate 2031a includes a bombardment side a1 and a non-bombardment side a2, the first connecting portion 2032 is located on one side of the non-bombardment side a2, and the first electrode 2031b is located between the first connecting portion 2032 and the first electrode plate 2031a; gas path assembly 204 is located on the surface 110 of the vacuum cavity 100 or on the first plasma source assembly 203, and is used to provide gas to the bombardment side a1 of the first plasma source assembly 203.

[0049] Among them, reference Figure 4 and Figure 5 As shown, the auxiliary film-forming apparatus 10 includes a vacuum chamber 100 and an auxiliary film-forming structure 200 at least partially disposed within the vacuum chamber 100. The vacuum chamber 100 can be understood as an outer shell structure of the auxiliary film-forming apparatus 10, providing a placement space for the auxiliary film-forming structure 200. Optionally, the auxiliary film-forming structure 200 can also be disposed outside the vacuum chamber 100, with only the bombardment side a1 of the first electrode plate 2031a inside the vacuum chamber 100. This embodiment of the invention does not specifically limit this. The auxiliary film-forming structure 200 is used to implement the auxiliary film-forming process and to clean or activate the substrate. The auxiliary film-forming process can be understood as increasing the kinetic energy of the film particles, compacting the film, or introducing active reactants during the coating process. Specifically, the auxiliary film-forming structure 200 is a plasma source used to clean or activate the substrate before coating and to assist in film formation during coating.

[0050] Further reference Figure 4 and Figure 5As shown, the surface 110 of the vacuum cavity 100 comprises a first face 101, a second face 103 and a plurality of side faces 102, the first face 101 and the second face 103 are oppositely arranged, and the first face 101 and the second face 103 can be understood as the top face and the bottom face of the vacuum cavity 100. The side faces 102 connect the first face 101 and the second face 103, and thus the first face 101, the second face 103 and the plurality of side faces 102 can constitute a closed space for placing the auxiliary film forming structure 200 and ensuring the film forming process or the surface pre-cleaning process to be carried out. Optionally, if the vacuum cavity 100 is a cylinder as a whole, the vacuum cavity 100 can comprise one side face 102; or if the vacuum cavity 100 is a cube or other shape, the vacuum cavity 100 can comprise a plurality of side faces 102, and the number of the side faces 102 is not specifically limited in the embodiments of the present application. It should be noted that, Figure 4 In order to clearly show the relative arrangement relationship of the first face 101 and the second face 103, the vacuum cavity 100 is exemplified as a hexahedron structure, wherein the vacuum cavity 100 comprises four side faces 102, and Figure 4 The auxiliary film forming structure 200 in the vacuum cavity 100 is not shown one by one in the drawings. The specific appearance of the vacuum cavity 100 can be adaptively adjusted according to the actual situation, and the embodiments of the present application do not specifically limit the same.

[0051] Specifically, referring to Figure 5As shown, the auxiliary film forming structure 200 cooperates with the rotating support 201 and at least one substrate 202 to realize the auxiliary film forming process. The rotating support 201 can be located inside the vacuum cavity 100, the substrate 202 can be arranged on the rotating support 201, and the rotating support 201 can drive the substrate 202 to rotate in the direction s1 perpendicular to the side surface 102. Preferably, the rotating support 201 can also be arranged in the central region inside the vacuum cavity 100, so as to ensure the balance and regularity of the overall structure. The substrate 202 can be a planar structure for depositing and preparing a related film layer structure, for example, some plasma formed by gas discharge using the auxiliary film forming device 10 acts on the surface of the substrate 202. Specifically, the auxiliary film forming structure 200 can increase the kinetic energy of the film material ions between the vacuum cavity 100 and the substrate 202; or the auxiliary film forming structure 200 can compact the film layer structure formed on the substrate 202, play the role of auxiliary film forming, and improve the quality of the film layer; or some active reactants can be introduced by plasma to react with the film material ions, and finally form new products on the substrate 202. The rotating support 201 can drive the substrate 202 to rotate, and the substrate 202 can be rotated to the region for depositing the film layer, or the process of gradually forming the film on the plurality of substrates 202 can be adjusted. It should be noted that the number of substrates 202 arranged on the rotating support 201 cooperating with the auxiliary film forming structure 200 can be one or more, Figure 5 For example, eight substrates 202 are arranged on the rotating support 201, and the actual number of substrates 202 can be adjusted according to the requirements, and the embodiments of the present application do not make specific limitations.

[0052] Further, referring to Figure 6As shown, the auxiliary film forming structure 200 further comprises a gas path assembly 204, wherein the gas path assembly 204 can be arranged on the surface 110 of the vacuum cavity 100, or the gas path assembly 204 can be arranged on the first plasma source assembly 203, and the gas path assembly 204 is used to provide gas to the bombardment side a1 of the first plasma source assembly 203, and the gas can be oxygen or argon, etc., and the type of the gas can be adjusted according to the type of the film layer to be deposited, or the type of the gas can be adjusted according to whether the deposition of the film layer or the pre-cleaning of the surface, and the specific type of the gas is not limited in the embodiment of the present application, and can be adjusted adaptively according to the actual demand. Further, the gas path assembly 204 in the auxiliary film forming structure 200 can be one or more, and the specific number of the gas path assembly 204 can be adjusted adaptively according to the actual demand. Further, if the gas path assembly 204 is arranged on the side surface 102, the gas path assembly 204 can be arranged at the edge or the center of the side surface 102, and the arrangement position of the gas path assembly 204 is flexible, and can be adjusted adaptively according to the actual demand. The gas path assembly 204 for providing gas in the vacuum cavity 100 is a prior art, and will not be described in detail here.

[0053] Further, referring to Figures 4 to 6 As shown, the auxiliary film forming structure 200 comprises a first plasma source assembly 203 arranged on the side surface 102. Specifically, referring to Figure 6 As shown, the first plasma source assembly 203 comprises a first electrode member 2031 and a first connecting portion 2032, and the first electrode member 2031 comprises a first electrode plate 2031a and a first electrode 2031b. The first electrode plate 2031a comprises a bombardment side a1 and a non-bombardment side a2, and the first connecting portion 2032 is located on one side of the non-bombardment side a2. The first connecting portion 2032 can be connected with the power supply 20, and the electrical signal is transmitted to the first electrode 2031b through the first connecting portion 2032, so that when the discharge is carried out under the alternating current power supply such as radio frequency or intermediate frequency, the gas ionization can be caused to produce the capacitive coupled plasma at the side of the first electrode plate 2031a away from the first electrode 2031b. The power supply can be an alternating current power supply such as radio frequency power supply or direct current power supply. The alternating current power supply can be radio frequency power supply and intermediate frequency power supply, etc.

[0054] Specifically, the first electrode member 2031 is connected with the radio frequency power supply, the gas path assembly 204 inputs the gas (for example, argon gas, Figure 6 as shown in b) into the vacuum cavity 100, and then the discharge occurs in the vacuum cavity 100 near the first electrode plate 2031a to form the positive ions (as shown in b1), Figure 6 active neutral atoms and free electrons (as shown in b2)Figure 6 The plasma is composed of particles such as (shown as b1 in the image). The positive ions in the aforementioned plasma ( Figure 6 (shown as b2 in the diagram) or active neutral atoms can be used to clean the substrate 202 or assist in film formation. Further, the specific working process of the auxiliary film formation device 10 can be explained as follows: Taking an RF power supply as an example, the gas supplied by the gas path assembly 204 (for example, argon) enters the vacuum chamber 100. Since the first plasma source assembly 203 is connected to the RF power supply, the argon gas is ionized after entering the vacuum chamber 100, resulting in positively charged ions (argon ions). Therefore, when the power supply is an RF power supply, free electrons oscillate between the first electrode 2031a and the substrate 202, increasing the movement path of the free electrons, thereby increasing the overall plasma concentration and improving the uniformity of the plasma treatment of the substrate by the auxiliary film formation device.

[0055] Preferably, the first electrode 2031a can be a flat plate structure, and the corresponding substrate 202 can also be a flat plate structure. Compared with using a high-frequency inductively coupled coil, a uniform electromagnetic field is formed between the first electrode 2031a and the substrate 202. Specifically, the first electrode 2031b includes a copper plate. Benefiting from the uniform electromagnetic field, free electrons ( Figure 6 The distribution of plasma (shown as b1 in the image) within the plane of the first electrode 2031a is relatively uniform, thereby ensuring that the plasma between the first electrode 2031a and the substrate 202 (especially within the plane parallel to the plane of the first electrode 2031a) is relatively uniform. Figure 6 (shown as b2) The distribution is more uniform, thus ensuring a more balanced ion distribution acting on the substrate 202, thereby improving the working effect of the auxiliary film-forming device 10 on the plasma treatment of the substrate 202. Optionally, the first electrode plate 2031a includes a quartz electrode plate. Specifically, the material of the first electrode plate 2031a is preferably a material with a low sputtering yield, such as quartz. Regarding the sputtering yield of the first electrode plate 2031a, in practical applications, it is acceptable as long as it meets the specific requirements of the coating process, and is not limited here. For example, if the substrate is bombarded before depositing a silicon oxide thin film on the substrate 202, the first electrode plate 2031a can be made of quartz or amorphous silicon oxide, as long as the amount of silicon oxide material sputtered from the first electrode plate 2031a during the operation of the first plasma source component 203 has an impact on the characteristics of the subsequently deposited silicon oxide thin film within the allowable error range. For example, in some embodiments, at 500 eV Ar + Under bombardment, the sputtering yield of the quartz first electrode 2031a, at 0.1 to 0.2 atoms / ions, meets the requirements of the coating process. In other embodiments, at 2000 eV Ar +Under bombardment, the sputtering yield of the first electrode plate 2031a made of silicon oxide material can also meet the requirements of the film coating process.

[0056] In summary, the embodiment of the present application provides an auxiliary film forming device, which comprises an auxiliary film forming structure arranged in a vacuum chamber. The auxiliary film forming structure comprises a first plasma source assembly and a gas path assembly. The first plasma source assembly comprises a first electrode member and a first connecting portion. The first electrode member comprises a first electrode plate and a first electrode. The first connecting portion is located on the non-bombardment side of the first electrode plate. The gas path assembly is located in the vacuum chamber or the first plasma source assembly and is used to provide gas to the bombardment side of the first plasma source assembly. At least part of the ions generated by discharging the gas are transmitted to the substrate. The first electrode in the first electrode member can improve the uniformity of the plasma treatment of the auxiliary film forming device on the substrate.

[0057] Figure 7 is a second top view of the first plasma source assembly and the substrate provided by the embodiment of the present application, Figure 8 is a third top view of the first plasma source assembly and the substrate provided by the embodiment of the present application. Figure 9 is a structural schematic diagram of a magnet assembly provided by the embodiment of the present application, referring to Figures 7 to 9 , the auxiliary film forming structure 200 further comprises a magnet assembly 205. The magnet assembly 205 comprises a first magnet unit 2051. The first magnet unit 2051 is located between the first electrode member 2031 and the first connecting portion 2032. The first magnet unit 2051 comprises a first magnet 2051a and a second magnet 2051b. The orthographic projection of the first magnet 2051a on the first electrode plate 2031a surrounds the orthographic projection of the second magnet 2051b on the first electrode plate 2031a. The polarity of the first magnet 2051a is opposite to the polarity of the second magnet 2051b.

[0058] Further, referring to Figures 7 to 9 , the auxiliary film forming structure 200 further comprises a magnet assembly 205. The magnet assembly 205 comprises a first magnet unit 2051. The first magnet unit 2051 comprises a first magnet 2051a and a second magnet unit 2051b. Referring to Figure 7 and Figure 8 , the first magnet unit 2051 is located between the first electrode member 2031 and the first connecting portion 2032. By adding an electromagnetic assembly between the first electrode 2031b and the first connecting portion 2032, an additional magnetic field can be generated between the first electrode plate 2031a and the substrate 202, which helps to increase the movement path of free electrons in the magnetic field region to generate more plasma.

[0059] Specifically, referring to Figure 9As shown, the projection of the first magnet 2051a to the first electrode plate 2031a surrounds the projection of the second magnet 2051b to the first electrode plate 2031a, i.e. the first magnet 2051a is arranged around the second magnet 2051b. Figure 9 As shown, the projection of the first magnet 2051a to the first electrode plate 2031a surrounds the projection of the second magnet 2051b to the first electrode plate 2031a, i.e. the first magnet 2051a is arranged around the second magnet 2051b. Figure 7 As shown, the projection of the first magnet 2051a to the first electrode plate 2031a surrounds the projection of the second magnet 2051b to the first electrode plate 2031a, i.e. the first magnet 2051a is arranged around the second magnet 2051b. Figure 8 As shown, the projection of the first magnet 2051a to the first electrode plate 2031a surrounds the projection of the second magnet 2051b to the first electrode plate 2031a, i.e. the first magnet 2051a is arranged around the second magnet 2051b. Figures 7 to 9 As shown, the projection of the first magnet 2051a to the first electrode plate 2031a surrounds the projection of the second magnet 2051b to the first electrode plate 2031a, i.e. the first magnet 2051a is arranged around the second magnet 2051b. Figure 7 As shown, the projection of the first magnet 2051a to the first electrode plate 2031a surrounds the projection of the second magnet 2051b to the first electrode plate 2031a, i.e. the first magnet 2051a is arranged around the second magnet 2051b. Figure 8 As shown, the projection of the first magnet 2051a to the first electrode plate 2031a surrounds the projection of the second magnet 2051b to the first electrode plate 2031a, i.e. the first magnet 2051a is arranged around the second magnet 2051b. Figure 6 As shown, the projection of the first magnet 2051a to the first electrode plate 2031a surrounds the projection of the second magnet 2051b to the first electrode plate 2031a, i.e. the first magnet 2051a is arranged around the second magnet 2051b.

[0060] Further, in the first magnet unit 2051 arranged between the first electrode member 2031 and the first connecting part 2032, the first electromagnet 2051a and the second electromagnet 2051b with opposite magnetic poles are arranged in the direction as shown in Figure 9 As shown, the projection of the first magnet 2051a to the first electrode plate 2031a surrounds the projection of the second magnet 2051b to the first electrode plate 2031a, i.e. the first magnet 2051a is arranged around the second magnet 2051b. Figure 9 As shown, the projection of the first magnet 2051a to the first electrode plate 2031a surrounds the projection of the second magnet 2051b to the first electrode plate 2031a, i.e. the first magnet 2051a is arranged around the second magnet 2051b.

[0061] Specifically, by arranging the first magnet unit 2051, the concentration of the plasma formed by ionizing the gas between the first electrode plate 2031a and the substrate 202 can be improved, and the deposition effect of the film layer on the substrate 202 can be improved. Further, by arranging the first magnet unit 2051, the confinement of the positive ions formed after ionization of the gas can be improved to some extent, so as to avoid direct impact of the positive ions on the substrate 202, thereby avoiding the influence of the high-speed movement of the positive ions on the working temperature of the substrate 202, and improving the working efficiency of the auxiliary film forming device 10.

[0062] The introduction of the first magnet unit 2051 can also constrain the free electrons in the space to be near the first electrode plate 2031a, thereby increasing the ionization rate of the glow discharge area and improving the ion concentration. If the deposition rate is to be controlled by adjusting the ion concentration, the permanent magnet in the first magnet unit 2051 can be replaced by an adjustable magnet to control the magnetic field strength and thus the ion concentration and deposition rate.

[0063] Further, the size relationship between the magnetic field strength of the second magnet 2051b and the magnetic field strength of the first magnet 2051a can be determined according to actual needs. When the magnetic field strength of the second magnet 2051b and the magnetic field strength of the first magnet 2051a are equal in size, the plasma generation area is mainly located near the first electrode plate 2031a, and the substrate 202 receives less plasma bombardment. When the magnetic field strength of the second magnet 2051b and the magnetic field strength of the first magnet 2051a are not equal in size, the magnetic field lines become asymmetric in shape and distribution, and the plasma generation area extends to the vicinity of the substrate 202 to enhance the action strength of the plasma on the substrate 202.

[0064] For example, the height of the first magnet 2051a along the thickness direction h of the first electrode plate 2031 and the height of the second magnet 2051b along the thickness direction h of the first electrode plate 2031 can be adjusted. That is, along the thickness direction h of the first electrode plate 2031, the height of the first magnet 2051a and the height of the second magnet 2051b can be the same, so that the process of preparing the first magnet unit 2051 is relatively simple, and the flatness of the first plasma source assembly 203 is improved. Further, along the thickness direction h of the first electrode plate 2031, the height of the first magnet 2051a can be different from the height of the second magnet 2051b, for example, the height of the first magnet 2051a is less than the height of the second magnet 2051b, that is, the height of the magnet surrounded inside is higher, so that the direction of the magnetic field lines in the magnetic field can be combined to improve the plasma concentration in the central region of the first electrode plate 2031 in the rotation direction of the rotating support 201, thereby improving the working efficiency of the auxiliary film forming device 10.

[0065] Reference Figure 9As shown in FIG. 1, the first magnet 2051a includes two first magnet sections 2051a1 and two second magnet sections 2051a2, the first magnet sections 2051a1 extend along the second direction X2, the second magnet sections 2051a2 extend along the third direction X3, and the first magnet sections 2051a1 and the second magnet sections 2051a2 are connected in sequence; the second magnet 2051b includes one third magnet section 2051b1 and two fourth magnet sections 2051b2, the third magnet section 2051b1 extends along the second direction X2, and the fourth magnet sections 2051b2 extend along the third direction X3; along the second direction X2, the two fourth magnet sections 2051b2 are located on both sides of the third magnet section 2051b1; wherein the second direction X2 and the third direction X3 intersect and are parallel to the plane where the first pole plate 2031 is located.

[0066] Further, referring to FIG. 1, Figure 9 As shown in FIG. 1, the first magnet 2051a includes two first magnet sections 2051a1 and two second magnet sections 2051a2, wherein the extension directions of the first magnet sections 2051a1 and the second magnet sections 2051b are different, and preferably, the extension directions of the first magnet sections 2051a and the second magnet sections 2051b are arranged perpendicularly. The first magnet sections 2051a1 extend along the second direction X2, the second magnet sections 2051a2 extend along the third direction X3, two first magnet sections 2051a1 are connected through a second magnet section 2051a2, and two second magnet sections 2051a2 are connected through a first magnet section 2051a1, so that the first magnet sections 2051a1 and the second magnet sections 2051a2 are connected in sequence and end to end, thereby forming a surrounding space, and preferably, a rectangular space, for placing the second magnet 2051b. It should be noted that although the first magnet 2051a is divided into different areas by the first magnet sections 2051a1 and the second magnet sections 2051a2, the first magnet sections 2051a1 and the second magnet sections 2051a2 are a magnet structure prepared integrally.

[0067] Further, referring to FIG. 1, Figure 9 As shown in FIG. 1, the second magnet 2051b includes one third magnet section 2051b1 and two fourth magnet sections 2051b2, wherein the extension directions of the third magnet section 2051b1 and the fourth magnet sections 2051b2 are different, and preferably, the extension directions of the third magnet section 2051b1 and the fourth magnet sections 2051b2 are arranged perpendicularly. The third magnet section 2051b1 extends along the second direction X2, and the fourth magnet sections 2051b2 extend along the third direction X3; along the second direction X2, the two fourth magnet sections 2051b2 are located on both sides of the third magnet section 2051b1. Specifically, referring to FIG. 1, Figure 9As shown, along the second direction X2, the two fourth magnet parts 2051b2 are located on both sides of the third magnet part 2051b1.

[0068] Specifically, referring to Figure 9 As shown, the extending directions of the first magnet part 2051a1 and the third magnet part 2051b1 are the same, and the extending directions of the second magnet part 2051a2 and the fourth magnet part 2051b2 are the same, so that the first magnet 2051a and the second magnet 2051b can form electromagnetic fields in different directions, thereby ensuring more effective adjustment of the magnetic field between the first electrode plate 2031 and the substrate 202, and improving the working efficiency of the auxiliary film forming device 10.

[0069] Optionally, the first magnet comprises a first permanent magnet, and the second magnet comprises a second permanent magnet.

[0070] Optionally, the first magnet comprises a first permanent magnet, and the second magnet comprises a second permanent magnet.

[0071] Further, the first magnet can also be a first electromagnet, and the second magnet can also be a second electromagnet, i.e. the magnet assembly is replaced by an electromagnet, so that the adjustment of the magnetic field strength between the first electrode plate and the substrate can be realized, thereby controlling the ion density generated after ionization. Further, for the energy of the ions, the kinetic energy of the ions flying towards the substrate can be improved by adjusting the negative bias value on the substrate side, to compensate for the dissipation of the ion motion energy after two indirect transmissions (i.e. first flying towards the first electrode plate and then flying towards the substrate).

[0072] Figure 10 is a top view schematic diagram of another auxiliary film forming device provided by an embodiment of the present application, Figure 11 is a fourth top view schematic diagram of a first plasma source assembly and a substrate provided by an embodiment of the present application, Figure 12 is a structural schematic diagram of another magnet assembly provided by an embodiment of the present application, referring to Figure 6 , Figures 10 to 12As shown, the auxiliary film-forming structure 200 further comprises a second plasma source assembly 206, which is arranged adjacent to or spaced apart from the first plasma source assembly 203 on the same side surface 102; the second plasma source assembly 206 comprises a second electrode member 2061 and a second connecting portion 2062, the second electrode member 2061 comprises a second electrode plate 2061a and a second electrode 2061b; the second electrode plate 2061a comprises a bombardment side a1 and a non-bombardment side a2, the second connecting portion 2062 is located on one side of the non-bombardment side a2, and the second electrode 2061b is located between the second connecting portion 2062 and the second electrode plate 2061a; the magnet assembly 205 further comprises a second magnet assembly 2052, which is located between the second electrode plate 2061a and the second connecting portion 2062; the second magnet assembly 2052 comprises a first magnet 2051a and a second magnet 2051b, and the second magnet 2051b is projected onto the second electrode plate 2061 around the first magnet 2051a projected onto the second electrode plate 2061.

[0073] wherein, referring to Figure 10 and Figure 11 , the auxiliary film-forming structure 200 further comprises a second plasma source assembly 206 on the basis of the first plasma source assembly 203, and the second plasma source assembly 206 and the first plasma source assembly 203 are arranged adjacent to or spaced apart from each other on the same side surface 102. That is, the second plasma source assembly 206 and the first plasma source assembly 203 are located on the same side surface 102.

[0074] Specifically, referring to Figure 6 , the first plasma source assembly 203 comprises a first electrode member 2031 and a first connecting portion 2032, and the first electrode plate 2031a comprises a bombardment side a1 and a non-bombardment side a2, and the first connecting portion 2032 is located on one side of the non-bombardment side a2. Referring to Figure 10 and Figure 11 , the second plasma source assembly 206 comprises a second electrode member 2061 and a second connecting portion 2062, and the second electrode plate 2061a also comprises a bombardment side a1 and a non-bombardment side a2, and the second connecting portion 2062 is located on one side of the non-bombardment side a2. Further, the second electrode plate 2061a is also a flat plate structure like the first electrode plate 2031a. Therefore, it can be seen that the basic structure of the first plasma source assembly 203 is the same as that of the second plasma source assembly 206.

[0075] Further, the power source connected to the first electrode 2031b through the first connecting part 2032 can be a radio frequency power source, and the power source connected to the second electrode 2061b through the second connecting part 2062 can also be a radio frequency power source. Among them, the power source connected to the first plasma source group 203 and the power source connected to the second plasma source subassembly 206 are two independent power sources, or can share one power source, at this time, the first connecting part 2032 and the second connecting part 2062 can be connected in parallel to the output end of the radio frequency power source. Optionally, in the case of the power source connected to the first plasma source group 203 and the power source connected to the second plasma source subassembly 206 being independent of the radio frequency power source, the power source connected to the first plasma source group 203 and the power source connected to the second plasma source subassembly 206 can be 180° out of phase, so that in the same cycle of operation, the electrical properties of the first electrode plate 2031a and the second electrode plate 2061a alternately change. With this configuration, electrons can oscillate back and forth between the first electrode plate 2031a and the second electrode plate 2061a, which is conducive to obtaining a higher plasma concentration. In some low-cost embodiments, the power source connected to the first plasma source group 203 and the power source connected to the second plasma source subassembly 206 can also be a medium frequency power source, and the first connecting part 2032 and the second connecting part 2062 are connected to the two poles of the medium frequency power source, respectively. With this configuration, electrons can also oscillate back and forth between the first electrode plate 2031a and the second electrode plate 2061a, which is conducive to obtaining a higher plasma concentration.

[0076] It can also be understood that when the auxiliary film forming structure 200 includes the first plasma source group 203 and the second plasma source subassembly 206, the first electrode plate 2031a and the second electrode plate 2061a are two twin electrode plates. Thus, the two twin electrode plates periodically alternate between being anodes and cathodes, producing a periodic ion bombardment cycle, when one electrode plate (for example, the first electrode plate 2031) is in the negative half cycle (bombardment phase), the other electrode plate (for example, the second electrode plate 2061) is in the positive half cycle (charge neutralization phase), forming a dynamic balance, reducing charge accumulation, and improving process stability. Further, when the auxiliary film forming structure 200 simultaneously includes the first plasma source group 203 and the second plasma source subassembly 206, the service life of the auxiliary film forming device 10 can also be improved. Specifically, the alternating operation of the first electrode plate 2031a and the second electrode plate 2061a can distribute the etching area on two planar cathode plates, delay local over-etching of a single electrode plate, and prolong the overall service life.

[0077] Among them, the reference Figure 11As shown, the minimum distance between the first electrode plate 2031a and the rotating support 201 is L1, and the minimum distance between the second electrode plate 2061a and the rotating support 201 is L2, satisfying |L1-L2| / L2≤20%, and L1 and L2 are positive numbers. That is, the values of L1 and L2 are the same or similar. In this regard, it can be understood that the distances between the first electrode plate 2031a and the second electrode plate 2061a and the substrate 202 to be deposited are the same or similar, so that the effects of deposition by the first plasma source group 203 and the second plasma source group 206 are balanced, and the working stability of the auxiliary film forming device 10 is ensured. Optionally, in order to ensure the structural stability of the first electrode plate 2031a and the second electrode plate 2061a, a cover plate 300 can be arranged on the side of the first electrode plate 2031a close to the rotating support 201, which can protect the first electrode plate 2031a and the second electrode plate 2061a. Further, the cover plate 300 can also be provided with an opening for exposing the first electrode plate 2031a and / or the second electrode plate 2061a, facilitating the control of plasma and the like.

[0078] Further, referring to Figures 10 to 12 As shown, the magnet assembly 205 includes a second magnet assembly 2052 in addition to the first magnet assembly 2051, and the relative positional relationship between the first magnet assembly 2051 and the first electrode plate 2031a is the same as that between the second magnet assembly 2052 and the second electrode plate 2061a. Since the first magnet assembly 2051 can enhance the magnetic field strength between the first electrode plate 2031a and the substrate 202, the second magnet assembly 2052 can enhance the magnetic field strength between the second electrode plate 2061a and the substrate 202. Specifically, referring to Figures 10 to 12 As shown, the second magnet unit 2052 includes a first magnet 2051a and a second magnet 2051b, and the orthogonal projection of the second magnet 2051b on the second electrode plate 2061a surrounds the orthogonal projection of the first magnet 2051a on the second electrode plate 2061a. That is, in the first magnet unit 2051, the first magnet 2051a surrounds the second magnet 2051b, and in the second magnet unit 2052, the second magnet 2051b surrounds the first magnet 2051a.

[0079] Continuing to refer to Figure 7 and Figure 11 As shown, the auxiliary film forming structure 200 further includes a magnet base 400 located on the side of the magnet assembly 205 away from the first electrode member 2031; the first magnet 2051a and the second magnet 2051b are both arranged at the magnet base 400; the auxiliary film forming structure 200 further includes a conductive copper block 500 located between the first connecting portion 2032 and the first electrode 2031b to conduct the first connecting portion 2032 and the first electrode 2031b.

[0080] The magnet base 400 is a structure for supporting and placing the first magnet 2051a and the second magnet 2051b. The magnet base 400 can be made of a material with magnetic properties, such as carbon steel, ferrite material, etc. Alternatively, the first magnet 2051a and the second magnet 2051b can be glued or connected by fasteners to the magnet base 400, which is not limited here.

[0081] Further, the conductive copper block 500 is arranged between the first connecting portion 2032 and the first electrode member 2031. When the auxiliary film-forming structure 200 further comprises the second plasma source assembly 206, the conductive copper block 500 is also arranged between the second connecting portion 2062 and the second electrode member 2061. The conductive copper block 500 is used to conduct the first connecting portion 2032 and the first electrode 2031b. Specifically, the conductive copper block 500 can be made of pure copper of T3 grade or above, which has high electrical conductivity and thermal conductivity, facilitating the transfer of current between the first connecting portion 2032 and the magnet base 400. Further, the conductive copper block 500 can be adjusted in shape to ensure that it is closely attached to the magnet base 400.

[0082] With reference to Figure 7 and Figure 11 The auxiliary film-forming structure 200 further comprises a positioning copper block 600, which is arranged between the first magnet unit 2051 and the first electrode 2031b to conduct the first connecting portion 2032 and the first electrode 2031b and position the first magnet unit 2051 and the first electrode member 2031.

[0083] Further, the auxiliary film-forming structure 200 further comprises a positioning copper block 600, which is arranged between the first magnet unit 2051 and the first electrode 2031b. When the auxiliary film-forming structure 200 further comprises the second plasma source assembly 206, the positioning copper block 600 is also arranged between the second magnet unit 2052 and the second electrode 2061b2.

[0084] The positioning copper block 600 conducts the first connecting portion 2032 and the first electrode 2031b, and positions the magnet assembly 205 and the first electrode member 2031. Specifically, the positioning copper block 600 can be made of C1020 copper, which has a thermal conductivity of 113 W / (mk), higher than that of pure copper. Since the positioning copper block 600 also serves as a positioning member for the magnet assembly 205 and the first electrode member 2031, there is a probability of thermal expansion deformation. Since the C1020 copper has a moderate thermal expansion coefficient, it can better inhibit the occurrence of thermal deformation.

[0085] With reference to Figure 7 and Figure 11As shown, the auxiliary film-forming structure 200 also includes a cooling assembly 700; the cooling assembly 700 includes a cooling copper plate 710, which is disposed between the positioning copper block 600 and the first electrode component 2031. The cooling copper plate 710 includes a cooling channel 720, and a flowing medium is disposed in the cooling channel 720 to control the temperature of the first electrode component 2031.

[0086] Furthermore, during the operation of the auxiliary film-forming device 10, the first electrode plate 2031a generates a significant amount of heat. If not cooled promptly, this heat will affect the performance of the auxiliary film-forming device 10. For example, high temperatures can reduce the connection strength between the first electrode plate 2031a and the first electrode 2031b, thereby affecting the service life of the first electrode component 2031. Specifically, the first electrode component 2031 in the auxiliary film-forming device 10 generates heat during operation. Therefore, by providing a cooling component 700, the heat generated by the first electrode component 2031 can be absorbed promptly, preventing heat accumulation from affecting the overall working effect. Optionally, when the auxiliary film-forming structure 200 also includes a first magnet unit 2051, the cooling component 700 can simultaneously cool both the first electrode component 2031 and the first magnet unit 2051. Optionally, when the auxiliary film-forming structure 200 also includes a second plasma source component 206, a cooling component 700 is also provided on one side of the second electrode component 2061 for cooling.

[0087] Specifically, the auxiliary film-forming structure 200 also includes a cooling assembly 700, which includes a cooling copper plate 710 disposed between the positioning copper block 600 and the first electrode component 2031. This ensures that the cooling copper plate 710 can promptly dissipate the heat generated by the first electrode component 2031. Further, the cooling copper plate 710 includes a cooling channel 720, which can be understood as a cavity structure disposed inside the cooling copper plate 710. Since a flowing medium can be placed inside the cooling channel 720, the flowing medium can absorb heat during its flow, thereby achieving a heat dissipation effect. Optionally, the cooling copper plate 710 and the first electrode component 2031 can be screwed or glued together; this embodiment of the invention does not specifically limit this. In the auxiliary film-forming structure 200, the power transmission path provided by the power source is sequentially: first connecting part 2032, conductive copper block 500, positioning copper block 600, cooling copper plate 710 to the first electrode component 2031.

[0088] Optional, see reference Figure 8 and Figure 11 As shown, the cooling assembly 700 also includes a cavity port 721, which is used to allow the flow medium to flow into or out of the cooling cavity channel 720, achieving the flow effect of the flow medium. The flow medium can be selected from condensate, antifreeze, or mineral oil, etc. Further, refer to...Figure 8 and Figure 11 As shown in

[0089] Optionally, as shown in Figure 8 and Figure 11 As shown in the drawings, the auxiliary film-forming structure 200 further comprises a plurality of insulation assemblies 800, which can be arranged at any position, and details are not listed here. Optionally, the insulation assembly 800 can be made of Teflon material.

[0090] Further, as shown in Figure 7 , Figure 8 and Figure 11 The first electrode 2031b is multiplexed with the cooling copper plate 710.

[0091] In this way, the utilization efficiency of the structure can be improved. Further, when the auxiliary film-forming structure 200 further comprises a second plasma source assembly 206, the second electrode 2061b can also be multiplexed with the cooling copper plate 710.

[0092] Figure 13 is a structural schematic diagram of a film-forming system provided by an embodiment of the present application. As shown in Figure 13 and, the present embodiment provides a film-forming system 1. As shown in Figure 5 , Figure 10 and Figure 13 The film-forming system 1 comprises the auxiliary film-forming device 10 described in any of the above embodiments, so the film-forming system 1 provided by the present embodiment has the corresponding beneficial effects in the above embodiments, which will not be repeated here. Further, the film-forming system 1 further comprises a target plate assembly 30, which is arranged on the side surface 102 and spaced apart from the first plasma source assembly 203; the target plate assembly 30 comprises a silicon target plate.

[0093] Continuing to refer to Figure 13 The film-forming system 1 further comprises a target plate assembly 30; the target plate assembly 30 is arranged on the side surface 102 and spaced apart from the first plasma source assembly 203, and the target plate assembly 30 comprises a silicon target plate. The material of the first plasma source assembly 203 is generally quartz, that is, the sputtering yield of the target plate assembly is greater than that of the first plasma source assembly 203.

[0094] Further, as shown in Figure 13 The film-forming system 1 comprises the first plasma source assembly 203 and a plurality of target plate assemblies 30, which can realize different types of film layers deposited on the substrate 202, so as to embody the functionality and universality of the film-forming system 1.

[0095] Wherein, the substrate 202 in the film forming system 1 is arranged on the rotating support 201, and the rotating support 201 can drive the substrate 202 to be arranged opposite to the first plasma source assembly 203, or to be arranged opposite to the target plate assembly 30. Optionally, before film deposition, the first plasma source assembly 203 can be turned on alone to work alone. In the case of the first plasma source assembly 203 working alone, the first plasma source assembly 203 can ionize the argon gas inputted, and the bombardment of the argon ions generated after ionization can generate “ion cleaning” and “ion assisted deposition” effects, so as to bombard and clean the contaminants (such as hydrocarbons) or oxide layers adsorbed on the surface of the substrate 202, and clean the substrate interface. Further, the gas ion bombardment on the substrate 202 can also cause defects (such as vacancy structure) on the surface atoms of the substrate 202, and further introduce nanoscale etching pits or lattice vacancies on the surface of the substrate 202, increase the surface energy, and promote the diffusion and bonding of thin film atoms (provide more mechanical “anchor points” for the subsequent metal thin film, and promote the uniform nucleation of the thin film in the initial stage). Further, during the film forming process, the momentum transfer of the ions can fill the pores in the thin film, reduce the columnar crystal structure, and form a more dense structure.

[0096] When the first plasma source assembly 203 works, other target plate assemblies 30 can also work at the same time. Specifically, when the gas path assembly 204 inputs the process gas into the inside, for example, inputs oxygen into the inside, the metal oxide or SiO2 film layer can be obtained on the substrate 202. Taking the metal target material in the target plate assembly 30 in the vacuum cavity 100 as an example, the target plate assembly 30 releases metal atoms to deposit on the substrate 202, and the oxygen ions generated by the first plasma source assembly 203 combine with the metal atoms deposited on the substrate 202 to form a metal oxide film layer on the surface. In this way, the supply of oxygen ions and metal atoms can be accurately controlled, so as to obtain a metal oxide film layer with specific composition and performance. The chemical activity of oxygen ions is much higher than that of neutral oxygen atoms, and when reaching the substrate 202, the oxygen ions can efficiently react with the metal atoms sputtered from the metal target to form an oxide closer to the theoretical composition.

[0097] Obviously, the above embodiments of the present application are only examples for clear illustration of the present application, and are not intended to limit the embodiments of the present application. For those skilled in the art, various obvious changes, re-adjustments and substitutions can be made without departing from the scope of the present application. Here, it is not necessary and impossible to enumerate all the embodiments. Any modification, equivalent substitution and improvement made within the spirit and principle of the present application shall be included in the protection scope of the claims of the present application.

Claims

1. An auxiliary film-forming device, characterized in that, It includes a vacuum chamber and an auxiliary film-forming structure, with at least a portion of the auxiliary film-forming structure disposed within the vacuum chamber; The surface of the vacuum cavity includes a first surface, a second surface, and a side surface. The first surface and the second surface are disposed opposite to each other along a first direction. The side surface extends along the first direction and connects the first surface and the second surface. The auxiliary film-forming structure includes: A first plasma source assembly is located on the side; The first plasma source assembly includes a first electrode component and a first connection portion. The first electrode component includes a first electrode plate and a first electrode. The first electrode plate includes a bombardment side and a non-bombardment side. The first connection portion is located on one side of the non-bombardment side, and the first electrode is located between the first connection portion and the first electrode plate. A gas path assembly, located on the surface of the vacuum cavity or on the first plasma source assembly, for supplying gas to the bombardment side of the first plasma source assembly.

2. The auxiliary film-forming device according to claim 1, characterized in that, The first electrode plate includes a quartz electrode plate.

3. The auxiliary film-forming device according to claim 1, characterized in that, The auxiliary film-forming structure further includes a magnet assembly; the magnet assembly includes a first magnet unit, which is located between the first electrode component and the first connecting portion; The first magnet unit includes a first magnet and a second magnet, wherein the orthographic projection of the first magnet onto the first pole plate surrounds the orthographic projection of the second magnet onto the first pole plate; wherein the polarity of the first magnet is opposite to that of the second magnet.

4. The auxiliary film-forming device according to claim 3, characterized in that, The first magnet includes two first magnet portions and two second magnet portions, the first magnet portions extending along a second direction, the second magnet portions extending along a third direction, and the first magnet portions and the second magnet portions being connected in sequence; The second magnet includes a third magnet portion and two fourth magnet portions, the third magnet portion extending along the second direction, and the fourth magnet portions extending along the third direction; along the second direction, the two fourth magnet portions are located on both sides of the third magnet portion; The second direction intersects with the third direction and is parallel to the plane containing the first electrode plate.

5. The auxiliary film-forming apparatus according to claim 3, characterized in that, The first magnet includes a first permanent magnet, and the second magnet includes a second permanent magnet.

6. The auxiliary film-forming apparatus according to claim 3, characterized in that, The auxiliary film-forming structure further includes a second plasma source assembly, which is arranged adjacent to or spaced apart from the first plasma source assembly on the same side surface. The second plasma source subassembly includes a second electrode component and a second connection portion. The second electrode component includes a second electrode plate and a second electrode. The second electrode plate includes a bombardment side and a non-bombardment side. The second connection portion is located on one side of the non-bombardment side. The second electrode is located between the second connection portion and the second electrode plate. The magnet assembly further includes a second magnet assembly located between the second pole plate and the second connecting portion; the second magnet unit includes the first magnet and the second magnet, and the orthographic projection of the second magnet onto the second pole plate surrounds the orthographic projection of the first magnet onto the second pole plate.

7. The auxiliary film-forming apparatus according to claim 3, characterized in that, The auxiliary film-forming structure further includes a magnet base, which is located on the side of the magnet assembly away from the first electrode component; both the first magnet and the second magnet are disposed at the magnet base; The auxiliary film-forming structure further includes a conductive copper block, which is located between the first connecting portion and the first electrode to conduct electricity between the first connecting portion and the first electrode.

8. The auxiliary film-forming apparatus according to claim 7, characterized in that, The auxiliary film-forming structure also includes a positioning copper block, which is located between the first magnet unit and the first electrode to conduct the first connection portion to the first electrode and to position the first magnet unit and the first electrode component.

9. The auxiliary film-forming apparatus according to claim 8, characterized in that, The auxiliary film-forming structure also includes a cooling component; The cooling assembly includes a cooling copper plate disposed between the positioning copper block and the first electrode component. The cooling copper plate includes a cooling cavity, and a flowing medium is disposed within the cooling cavity to control the temperature of the first electrode component.

10. The auxiliary film-forming apparatus according to claim 9, characterized in that, The first electrode reuses the cooling copper plate.

11. A film-forming system, characterized in that, Includes the auxiliary film-forming device as described in any one of claims 1-10; The film formation system further includes a target plate assembly, which is disposed on the side surface at a distance from the first plasma source assembly; the target plate assembly includes a silicon target plate.

Images