Equipment and method for adsorbing and purifying semiconductor waste gas

Abstract

The invention discloses semiconductor waste gas adsorption and purification equipment and method. The semiconductor waste gas adsorption and purification equipment comprises a pretreatment mechanism, a composite adsorption mechanism and a catalytic purification mechanism which are connected in sequence, the pretreatment mechanism comprises a pretreatment circulation pipe shell which is horizontally arranged, the left end of the pretreatment circulation pipe shell is provided with an input pipe connecting hole penetrating in the circumferential direction of the pretreatment circulation pipe shell, a pretreatment input pipe is rotationally connected into the input pipe connecting hole, and a pretreatment output pipe extending along the axis of the pretreatment circulation pipe shell is fixed to the right end of the pretreatment circulation pipe shell; a plurality of tangential output pipes communicated with the interior of the pretreatment input pipe are fixed on the side wall of the pretreatment input pipe; a plurality of impurity discharge pipes are fixed on the outer side of the pretreatment circulation pipe shell, and the interior of the pretreatment circulation pipe shell is communicated with the interiors of the impurity discharge pipes through impurity discharge communication holes in the side wall; the equipment can perform high-efficiency pretreatment to reduce burden and improve quality for subsequent purification, the pretreatment mechanism is used as a first barrier for waste gas to enter the system, and the core advantages are that impurities are accurately separated, and the airflow stability is enhanced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor waste gas treatment, in particular to a semiconductor waste gas adsorption and purification device and method. BACKGROUND

[0002] In the semiconductor manufacturing process, various toxic and harmful waste gases containing fluorides, chlorides, volatile organic compounds (VOCs), silanes, etc. will be generated. If these waste gases are directly discharged, not only will they seriously pollute the environment, but also will pose a great threat to human health. At the same time, some corrosive gases will also damage the surrounding equipment. Therefore, it is necessary to solve the problems of complex composition, large concentration fluctuation and high purification requirement of semiconductor waste gas, to realize efficient adsorption, deep purification and standard emission of waste gas, and to meet the requirements of relevant environmental protection regulations. SUMMARY

[0003] The purpose of the present application is to provide a semiconductor waste gas adsorption and purification device and method, which can efficiently and comprehensively purify semiconductor waste gas and avoid omissions.

[0004] To achieve the above-mentioned purpose, the present application provides the following technical scheme: A semiconductor waste gas adsorption and purification device, comprising a pretreatment mechanism, a composite adsorption mechanism and a catalytic purification mechanism connected in sequence; The pretreatment mechanism comprises a horizontally arranged pretreatment flow pipe shell, the left end of the pretreatment flow pipe shell has an input pipe connecting hole penetrating through its circumference, a pretreatment input pipe is rotatably connected in the input pipe connecting hole, and a pretreatment output pipe extending along the axis of the pretreatment flow pipe shell is fixed at the right end of the pretreatment flow pipe shell; A plurality of tangential output pipes are fixed on the side wall of the pretreatment input pipe and are in communication with the inside of the pretreatment input pipe; A plurality of impurity discharge pipes are fixed outside the pretreatment flow pipe shell, and the inside of the pretreatment flow pipe shell is in communication with the inside of the impurity discharge pipe through the impurity discharge communication hole in the side wall; The composite adsorption mechanism comprises a composite adsorption cylinder shell arranged vertically and opened upward, a filter core support column coaxially arranged in the composite adsorption cylinder shell, a plurality of separation ring plates arranged in the horizontal plane are fixed on the filter core support column, a plurality of radial separation plates arranged in the radial plane of the filter core support column are fixed between adjacent two separation ring plates, and a filter core placement chamber is formed between adjacent two radial separation plates; A filter core containing shell with the same shape as the filter core placement chamber is placed in the filter core placement chamber, and adsorption and purification filler is filled in the inside of the filter core containing shell; The pretreatment output pipe is in communication with the bottom of the composite adsorption cylinder shell through a pipeline; The catalytic purification mechanism comprises a catalytic flow tube shell arranged vertically, a catalytic support column coaxial with the catalytic flow tube shell fixed in the catalytic flow tube shell, a plurality of groups of catalytic heating plates and a plurality of annular catalysts fixed on the catalytic support column; The upper end of the composite adsorption cylinder shell is connected to the inner bottom of the catalytic flow tube shell through a pipeline.

[0005] Preferably, an adsorption input chamber is formed between the lowermost one of the partition ring plates and the inner bottom of the composite adsorption cylinder shell, and a composite adsorption input pipe is fixed outside the composite adsorption cylinder shell and connected to the adsorption input chamber. The composite adsorption input pipe is connected to the pretreatment output pipe. A top sealing ring plate is fixed to the upper end of the filter core support column, the outer edge of the top sealing ring plate is sealed to the inner side wall of the composite adsorption cylinder shell, an adsorption output chamber is formed between the top sealing ring plate and the uppermost one of the partition ring plates, and a composite adsorption output pipe is fixed outside the composite adsorption cylinder shell and connected to the adsorption output chamber. A catalytic input chamber is formed in the inner bottom of the catalytic flow tube shell, a catalytic purification input pipe is fixed outside the catalytic flow tube shell and connected to the catalytic input chamber, and the catalytic purification input pipe is connected to the composite adsorption output pipe. A catalytic output chamber is formed in the inner top of the catalytic flow tube shell, and a catalytic purification output pipe is fixed outside the catalytic flow tube shell and connected to the catalytic output chamber.

[0006] Note: A plurality of independent "filter core placement chambers" are divided by the partition ring plates and the radial partition plates, each chamber can be filled with different types of adsorption purification filler according to the composition of the exhaust gas, and "targeted adsorption" is achieved.

[0007] Preferably, the tangential output pipes are arranged along the tangent direction of the inner side wall of the pretreatment input pipe. An air delivery machine is connected to one end of the pretreatment input pipe outside the pretreatment flow tube shell, the input end of the air delivery machine is connected to the exhaust gas source, and the output end of the air delivery machine is connected to the pretreatment input pipe through a rotary joint. A plurality of groups of rotational flow driving paddles are fixed to the pretreatment input pipe inside the pretreatment flow tube shell, and each group of rotational flow driving paddles is uniformly and dispersedly arranged around the circumferential direction of the pretreatment input pipe. A conical flow guide cover is fixed to one end of the pretreatment input pipe inside the pretreatment flow tube shell.

[0008] Note: The semiconductor exhaust gas is ejected from the plurality of tangential output pipes into the pretreatment flow tube shell, and the jet flow of the plurality of tangential output pipes can drive the pretreatment input pipe to rotate.

[0009] Preferably, the pre-treatment flow-through pipe shell is fixed with a separation flow guide ring at the impurity discharge communication hole, and the separation flow guide ring and the inner side wall of the pre-treatment flow-through pipe shell form an impurity separation channel. The impurity separation channel is fixed with a ring-shaped impurity filter screen plate at the end away from the pre-treatment input pipe.

[0010] Description: The dust and particulate impurities in the waste gas are thrown to the inner wall of the pipe shell by centrifugal force, which is convenient for discharging them through the impurity separation channel.

[0011] Preferably, the separation ring plate has a plurality of composite adsorption flow-through holes penetrating in the vertical direction, the top and bottom of the filter core containing shell are porous hollow structures penetrating in and out in the vertical direction, the inner side wall of the filter core containing shell is surrounded by a layer of non-woven fabric, and the adsorption purification filler is filled in the inner side of the non-woven fabric.

[0012] Description: The semiconductor waste gas flows in the composite adsorption cylinder shell from bottom to top, and the semiconductor waste gas passes through the composite adsorption flow-through hole, the side wall of the filter core containing shell, and the adsorption purification filler wrapped in the non-woven fabric in turn, and the adsorption purification filler is used to adsorb and purify the semiconductor waste gas.

[0013] Preferably, the composite adsorption cylinder shell is fixed with an upward-opening lifting drive fixed cylinder, the lifting drive fixed cylinder is slidably connected with a downward-opening lifting drive sliding cylinder, the top of the lifting drive sliding cylinder is fixed with a horizontally arranged lifting connection balance bar, one end of the lifting connection balance bar is fixedly connected with the top of the filter core support column through a lifting connection plate, and the other end of the lifting connection balance bar is fixed with a balance weight. The lifting drive fixed cylinder is provided with a lifting drive rod for driving the lifting drive sliding cylinder to move up and down.

[0014] Description: The inner rod of the lifting drive rod is extended to drive the lifting drive sliding cylinder, the lifting connection balance bar, the lifting connection plate, and the filter core support column to move up together, and the filter core support column extends the plurality of filter core containing shells from the top of the composite adsorption cylinder shell, which is convenient for replacing or repairing each filter core containing shell.

[0015] Preferably, the circular ring catalyst is a circular ring-shaped ceramic carrier, the circular ring catalyst has a plurality of waste gas catalytic through holes penetrating along the axis direction thereof, and the inner surface of the waste gas catalytic through hole is loaded with a layer of noble metal palladium.

[0016] Description: The catalyst can efficiently oxidize and decompose organic pollutants such as VOCs in the waste gas into CO2 and H2O, and the treatment efficiency can reach more than 99%; and the catalyst has good anti-poisoning performance and can effectively resist the influence of a small amount of impurities in the waste gas.

[0017] Preferably, each group of catalytic heating plates is uniformly and dispersedly arranged around the catalytic support column, and a plurality of circular ring catalysts and a plurality of catalytic heating plates are arranged and arranged in an interval staggered manner along the axis direction of the catalytic support column.

[0018] Description: The catalytic heating plate and the ring catalyst are arranged in a staggered manner, the catalytic reaction temperature can be accurately controlled, the catalyst is always in the best active interval, and the catalytic efficiency is prevented from being reduced due to low temperature, and the catalyst is prevented from being sintered and deactivated due to high temperature.

[0019] Preferably, a semiconductor waste gas adsorption purification method based on the semiconductor waste gas adsorption purification device comprises the following steps: S1, waste gas pretreatment: The semiconductor waste gas is transported into the pretreatment input pipe by using the air conveyor, the semiconductor waste gas in the pretreatment input pipe is sprayed out from the multiple tangential output pipes into the pretreatment flow pipe shell, and the jet flow of the multiple tangential output pipes can drive the pretreatment input pipe to rotate; The semiconductor waste gas in the pretreatment flow pipe shell generates a cyclone around the axis and flows to the direction of the pretreatment output pipe; Under the action of the centrifugal force, the dust and water vapor in the semiconductor waste gas are thrown to the inner wall of the pretreatment flow pipe shell, and the dust and water vapor in the semiconductor waste gas enter the impurity discharge pipe through the impurity discharge communication hole; The semiconductor waste gas from which the dust and water vapor are separated is discharged through the pretreatment output pipe; S3, waste gas composite adsorption treatment: The semiconductor waste gas discharged from the pretreatment output pipe then enters the inside of the composite adsorption cylinder shell through the composite adsorption input pipe, the semiconductor waste gas flows in the composite adsorption cylinder shell from bottom to top, and the semiconductor waste gas sequentially passes through the composite adsorption flow-through hole, the side wall of the filter core containing shell and the adsorption purification filler wrapped in the non-woven fabric, and the semiconductor waste gas is adsorbed and purified by using the adsorption purification filler; The adsorption purification filler between the adjacent two separation ring plates is one layer, and the multiple layers of adsorption purification filler from bottom to top are modified activated alumina adsorbent, porous molecular sieve adsorbent and activated carbon fiber adsorbent; The semiconductor waste gas after the adsorption purification treatment is finally discharged from the composite adsorption output pipe at the upper end of the composite adsorption cylinder shell; S3, catalytic oxidation deep treatment: The semiconductor waste gas discharged from the composite adsorption output pipe enters the catalytic flow pipe shell through the catalytic purification input pipe, and the semiconductor waste gas flows in the catalytic flow pipe shell from bottom to top; The catalytic heating plate is opened, the semiconductor waste gas is heated by using the catalytic heating plate, and the semiconductor waste gas after heating flows through the ring catalyst with a honeycomb structure, and the organic pollutants in the semiconductor waste gas are decomposed under the catalysis of the ring catalyst at high temperature.

[0020] Compared with the prior art, the beneficial effects of the present application are reflected in the following aspects: 1. The present application has reasonable structure design, efficient pretreatment, and reduces the burden of subsequent purification. The pretreatment mechanism is the first checkpoint of the exhaust gas entering the system, and the core advantage is precise separation of impurities and strengthening of airflow stability, which avoids subsequent adsorption filter core blockage and catalyst poisoning. 2. The present application is easy to operate. The pretreatment input pipe is connected to the tangential output pipe and the cyclone driven paddle, which forms a high-speed cyclone in the pretreatment flow pipe shell. The centrifugal force throws the dust and particulate impurities in the exhaust gas to the inner wall of the pipe shell, and then they are smoothly discharged through the impurity separation channel. 3. The composite adsorption mechanism of the present application has multi-chamber layered adsorption, which maximizes the purification efficiency. The separation ring plate and the radial separation plate divide multiple independent "filter core placement chambers". Each chamber can be filled with different types of adsorption purification filler according to the composition of the exhaust gas, realizing "targeted adsorption" and avoiding the adsorption limitations of single filler, thereby improving the overall purification efficiency. 4. The catalytic purification mechanism of the present application can deeply purify the residual refractory VOCs or toxic components after adsorption. The honeycomb structure of the circular ring catalyst increases the contact area between the catalyst and the exhaust gas. The noble metal palladium can oxidize and decompose the residual VOCs into CO2 and H2O at a lower temperature, avoiding direct emission of toxic components. 5. The catalytic heating plate and the circular ring catalyst of the present application are arranged alternately, which can accurately control the catalytic reaction temperature, ensure that the catalyst is always in the best active interval, and avoid the decrease of catalytic efficiency caused by low temperature and the sintering inactivation of catalyst caused by high temperature. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 is a structural diagram of the pretreatment mechanism of the present application; Figure 2 is a left view of the pretreatment input pipe of the present application; Figure 3 is a structural diagram of the separation flow guide ring of the present application; Figure 4 is a structural diagram of the composite adsorption mechanism of the present application; Figure 5 is a top view of Figure 4 ; Figure 6 is a structural diagram of the filter core containing shell of the present application; Figure 7 is a structural diagram of the catalytic purification mechanism of the present application; Figure 8 is a top view of the catalytic heating plate of the present application; Figure 9 is a top view of the circular ring catalyst of the present application.

[0022] In the figure, 10 - pretreatment mechanism, 11 - pretreatment flow tube shell, 110 - impurity separation channel, 111 - input tube connecting hole, 112 - separation guide ring, 113 - impurity filter screen, 12 - pretreatment input tube, 121 - tangential output tube, 122 - cyclone driving paddle, 123 - conical guide cover, 13 - pretreatment output tube, 14 - impurity discharge tube, 141 - impurity discharge communication hole, 15 - air conveyor, 151 - rotary joint, 20 - composite adsorption mechanism, 201 - adsorption input chamber, 202 - adsorption output chamber, 21 - composite adsorption cylinder shell, 211 - composite adsorption input tube, 212 - composite adsorption output tube, 22 - filter core support column, 220 - filter core placement chamber, 221 - separation ring plate, 222 - radial separation plate, 223 - top sealing ring plate, 224 - composite adsorption flow communication hole, 23 - filter core containing shell, 230 - adsorption purification filler, 241 - lifting drive fixed cylinder, 242 - lifting drive sliding cylinder, 243 - lifting connection balance bar, 244 - lifting connection plate, 245 - balance weight, 246 - lifting drive rod, 30 - catalytic purification mechanism, 301 - catalytic input chamber, 302 - catalytic output chamber, 31 - catalytic flow tube shell, 310 - catalytic support column, 311 - catalytic purification input tube, 312 - catalytic purification output tube, 32 - catalytic heating plate, 33 - circular ring catalyst, 330 - waste gas catalytic through hole. DETAILED DESCRIPTION

[0023] The following Figures 1-9 For the convenience of description, the following directions are defined as follows: the up-down, left-right and front-rear directions described below are consistent with the up-down, left-right and front-rear directions of the projection relationship of the respective main view or structural schematic view itself.

[0024] Example 1 A semiconductor waste gas adsorption purification device, as shown in Figure 1 , Figure 4 , Figure 7 , includes a pretreatment mechanism 10, a composite adsorption mechanism 20 and a catalytic purification mechanism 30 connected in sequence; As shown in Figure 1 , the pretreatment mechanism 10 includes a horizontally arranged pretreatment flow tube shell 11, the left end of the pretreatment flow tube shell 11 has an input tube connecting hole 111 extending through the circumference thereof, the input tube connecting hole 111 is rotationally connected with the pretreatment input tube 12, and the right end of the pretreatment flow tube shell 11 is fixed with a pretreatment output tube 13 extending along the axis thereof; As shown in Figure 2 , a plurality of tangential output tubes 121 are fixed on the side wall of the pretreatment input tube 12 and are in communication with the inside thereof; Multiple impurity discharge pipes 14 are fixed on the outside of the pretreatment flow tube shell 11. The inside of the pretreatment flow tube shell 11 is connected to the inside of the impurity discharge pipes 14 through the impurity discharge communication hole 141 on the side wall. like Figure 2 As shown, the tangential output pipe 121 extends along the tangential direction of the inner wall of the pretreatment input pipe 12; like Figure 1 As shown, one end of the pretreatment input pipe 12 located outside the pretreatment flow pipe shell 11 is connected to an air conveyor 15. The input end of the air conveyor 15 is connected to the exhaust gas source, and the output end of the air conveyor 15 is connected to the pretreatment input pipe 12 through a rotary joint 151. Air conveyor 15 is an existing air conveyor; Rotary joint 151 is a prior art rotary joint used to connect two pipes; Multiple sets of swirl-driven blades 122 are fixed on the portion of the pretreatment input pipe 12 inside the pretreatment flow tube shell 11. Each set of swirl-driven blades 122 is evenly distributed around the circumference of the pretreatment input pipe 12. A conical guide shroud 123 is fixed at one end of the pretreatment input pipe 12 inside the pretreatment flow pipe shell 11; like Figure 3 As shown, a separation guide ring 112 is fixed inside the pretreatment flow tube shell 11 at the impurity discharge communication hole 141, and an impurity separation channel 110 is formed between the separation guide ring 112 and the inner wall of the pretreatment flow tube shell 11. An annular impurity filter screen 113 is fixed at one end of the impurity separation channel 110 away from the pretreatment input pipe 12; The impurity filter screen 113 is a 600-mesh mesh plate, which is a prior art technology. like Figure 4 As shown, the composite adsorption mechanism 20 includes a vertically extending composite adsorption shell 21 with its opening facing upwards. Inside the composite adsorption shell 21, a filter element support column 22 is arranged coaxially with the shell. Multiple horizontally arranged partition ring plates 221 are fixed on the filter element support column 22. Figure 5 As shown, multiple radial partition plates 222 arranged along the radial plane of the filter element support column 22 are fixed between two adjacent partition ring plates 221, and a filter element placement chamber 220 is formed between two adjacent radial partition plates 222. like Figure 5 As shown, a filter element receiving shell 23 with the same shape is placed in the filter element placement chamber 220, and the filter element receiving shell 23 is filled with adsorption and purification packing material 230. The separator ring plate 221 has multiple composite adsorption flow holes 224 that extend vertically, such as... Figure 6As shown, the top and bottom of the filter element containing shell 23 are porous hollow structures that are through in the vertical direction, and the inner side wall of the filter element containing shell 23 is surrounded by a layer of non-woven fabric, and the adsorption and purification filler 230 is filled in the inner side of the non-woven fabric; The pretreatment output pipe 13 is connected to the inner bottom of the composite adsorption cylinder shell 21 through a pipeline; As shown in the drawings, Figure 4 As shown, the lowermost one of the partition ring plates 221 and the inner bottom of the composite adsorption cylinder shell 21 form an adsorption input chamber 201, and the outer side of the composite adsorption cylinder shell 21 is fixed with a composite adsorption input pipe 211 that is connected to the adsorption input chamber 201; The composite adsorption input pipe 211 is connected to the pretreatment output pipe 13; The filter element support column 22 is fixed with a top sealing ring plate 223 near the upper end position, the outer side edge of the top sealing ring plate 223 is sealed and matched with the inner side wall of the composite adsorption cylinder shell 21, and the top sealing ring plate 223 and the uppermost one of the partition ring plates 221 form an adsorption output chamber 202, and the outer side of the composite adsorption cylinder shell 21 is fixed with a composite adsorption output pipe 212 that is connected to the adsorption output chamber 202; As shown in the drawings, Figure 4 As shown, the outer side of the composite adsorption cylinder shell 21 is fixed with a lifting drive fixed cylinder 241 with an upward opening, the lifting drive fixed cylinder 241 is slidingly connected with a lifting drive sliding cylinder 242 with a downward opening inside, the lifting drive sliding cylinder 242 is fixed with a horizontally arranged lifting connection balance bar 243 at the top, one end of the lifting connection balance bar 243 is fixedly connected with the top of the filter element support column 22 through a lifting connection plate 244, and the other end of the lifting connection balance bar 243 is fixed with a balance counterweight 245; The lifting drive fixed cylinder 241 is provided with a lifting drive rod 246 for driving the lifting drive sliding cylinder 242 to move up and down, the lifting drive rod 246 is an electric control telescopic rod driven by a servo motor in the prior art, the outer rod end of the lifting drive rod 246 is fixedly connected with the inner bottom of the lifting drive fixed cylinder 241, and the inner rod end of the lifting drive rod 246 is fixedly connected with the inner top of the lifting drive sliding cylinder 242.

[0025] As shown in the drawings, Figure 7 As shown, the catalytic purification mechanism 30 includes a catalytic flow-through pipe shell 31 arranged vertically, the catalytic flow-through pipe shell 31 is fixed with a catalytic support column 310 coaxial therewith, and the catalytic support column 310 is fixed with multiple groups of catalytic heating plates 32 and multiple circular ring catalysts 33; The upper end of the composite adsorption cylinder shell 21 is connected to the inner bottom of the catalytic flow-through pipe shell 31 through a pipeline; The bottom of the catalytic flow shell 31 forms a catalytic input chamber 301, and the outer side of the catalytic flow shell 31 is fixed with a catalytic purification input pipe 311 in communication with the catalytic input chamber 301, and the catalytic purification input pipe 311 is in communication with the composite adsorption output pipe 212. The top of the catalytic flow shell 31 forms a catalytic output chamber 302, and the outer side of the catalytic flow shell 31 is fixed with a catalytic purification output pipe 312 in communication with the catalytic output chamber 302.

[0026] As shown in Figure 9 The circular ring catalyst 33 is a circular ring-shaped ceramic carrier, and the circular ring catalyst 33 has a plurality of exhaust gas catalytic through holes 330 penetrating along the axial direction thereof, and the inner surface of the exhaust gas catalytic through hole 330 is loaded with a layer of noble metal palladium.

[0027] As shown in Figure 8 Each group of catalytic heating plates 32 is uniformly dispersed around the catalytic support column 310, and a plurality of groups of catalytic heating plates 32 and a plurality of circular ring catalysts 33 are arranged in a staggered manner along the axial direction of the catalytic support column 310.

[0028] The space between a group of catalytic heating plates 32 and an adjacent circular ring catalyst 33 forms a reaction interval, and each reaction interval is provided with a temperature sensor of the prior art for real-time monitoring of the temperature change of the reaction interval.

[0029] Example 2: This embodiment describes a method for adsorbing and purifying semiconductor waste gas, based on the semiconductor waste gas adsorbing and purifying device of the above-mentioned embodiment 1, comprising the following steps: S1, waste gas pretreatment: The semiconductor waste gas is transported into the pretreatment input pipe 12 by the air conveyor 15, the semiconductor waste gas in the pretreatment input pipe 12 is sprayed from the plurality of tangential output pipes 121 into the pretreatment flow shell 11, and the jet flow of the plurality of tangential output pipes 121 can drive the pretreatment input pipe 12 to rotate; The semiconductor waste gas in the pretreatment flow shell 11 generates a rotational flow around its axis and flows towards the direction of the pretreatment output pipe 13; Under the action of centrifugal force, the dust and water vapor in the semiconductor waste gas will be thrown to the inner side wall of the pretreatment flow shell 11, and the dust and water vapor in the semiconductor waste gas will enter the impurity discharge pipe 14 through the impurity discharge communication hole 141; The semiconductor waste gas from which the dust and water vapor are separated is discharged through the pretreatment output pipe 13; S2, composite adsorption treatment of waste gas: The semiconductor waste gas discharged from the pretreatment output pipe 13 then enters the inside of the composite adsorption cylinder shell 21 through the composite adsorption input pipe 211, and the semiconductor waste gas flows upwards in the composite adsorption cylinder shell 21, sequentially passing through the composite adsorption flow-through holes 224, the side wall of the filter element containing shell 23 and the adsorption purification filler 230 wrapped in the non-woven fabric, and the semiconductor waste gas is adsorbed and purified by the adsorption purification filler 230; The adsorption purification filler 230 between the two adjacent partition ring plates 221 is one layer, and the multiple layers of adsorption purification filler 230 are sequentially divided into three sections from bottom to top, and the first section from bottom to top is a modified activated alumina adsorbent, the second section is a porous molecular sieve adsorbent, and the third section is an activated carbon fiber adsorbent; The adsorbent is designed in layers and sections; The first section is used for adsorbing fluorides and chlorides, and is filled with a modified activated alumina adsorbent. The adsorbent increases the adsorption sites for fluoride ions and chloride ions by surface modification treatment of activated alumina, and the adsorption capacity for fluorides and chlorides can reach 15-20 mg / g, and the adsorption efficiency is more than 98%. The second section is used for adsorbing silanes, and a porous molecular sieve adsorbent such as 13X molecular sieve is selected. The molecular sieve has a regular pore structure and a large specific surface area, and has good adsorption selectivity for silane, dichlorosilane and other silane gases, and the adsorption capacity can reach 8-12 mg / g, and the adsorption efficiency is more than 97%. The third section is used for auxiliary adsorption and purification, and is filled with an activated carbon fiber adsorbent, which further adsorbs a small amount of organic pollutants and other impurities remaining in the waste gas, and also performs secondary adsorption on the trace pollutants leaked from the previous two layers of adsorbents, to ensure good overall purification effect.

[0030] The semiconductor waste gas after adsorption and purification treatment is finally discharged from the composite adsorption output pipe 212 at the upper end of the composite adsorption cylinder shell 21; S3, catalytic oxidation deep treatment: The semiconductor waste gas discharged from the composite adsorption output pipe 212 then enters the catalytic flow-through pipe shell 31 through the catalytic purification input pipe 311, and the semiconductor waste gas flows upwards in the catalytic flow-through pipe shell 31; The catalytic heating plate 32 is turned on, and the semiconductor waste gas is heated by the catalytic heating plate 32. The heated semiconductor waste gas flows through the annular catalyst 33 with a honeycomb structure, and the organic pollutants in the semiconductor waste gas are decomposed under high temperature and the catalytic action of the annular catalyst 33; The circular ring catalyst 33 is a precious metal palladium supported honeycomb catalyst, the carrier is cordierite honeycomb ceramic, the catalyst is high in activity, can oxidize and decompose organic pollutants such as VOCs in waste gas into CO2 and H2O at a temperature of 250-350 DEG C, and the treatment efficiency can reach more than 99%; and the catalyst has good anti-poisoning performance and can effectively resist the influence of a small amount of impurities in the waste gas.

[0031] In the practical application process of the present application, when the filter element containing shell 23 inside the composite adsorption cylinder shell 21 needs to be replaced or overhauled, the inner rod of the lifting drive rod 246 is extended to drive the lifting drive sliding cylinder 242, the lifting connecting balance rod 243, the lifting connecting plate 244 and the filter element supporting column 22 to move upward together, the filter element supporting column 22 carries the plurality of filter element containing shells 23 from the top of the composite adsorption cylinder shell 21, and the filter element containing shells 23 are convenient to replace or overhaul; And the lowermost one of the separation ring plates 221 is always inside the composite adsorption cylinder shell 21, which is convenient to maintain the stability of the whole, after the replacement or overhaul is completed, the inner rod of the lifting drive rod 246 is retracted, so that the filter element supporting column 22 and the filter element containing shells 23 are retracted to the inside of the composite adsorption cylinder shell 21.

Claims

1. A device for adsorbing and purifying semiconductor waste gas, characterized in that, It includes a pretreatment unit (10), a composite adsorption unit (20), and a catalytic purification unit (30) connected in sequence. The pretreatment mechanism (10) includes a horizontally arranged pretreatment flow tube shell (11), the left end of which has an input tube connection hole (111) that runs through it circumferentially, a pretreatment input tube (12) that is rotatably connected in the input tube connection hole (111), and a pretreatment output tube (13) that extends along its axis is fixed at the right end of the pretreatment flow tube shell (11). The preprocessing input pipe (12) has multiple tangential output pipes (121) fixed on its side wall and connected to its interior. Multiple impurity discharge pipes (14) are fixed on the outside of the pretreatment flow tube shell (11), and the inside of the pretreatment flow tube shell (11) is connected to the inside of the impurity discharge pipes (14) through the impurity discharge communication hole (141) on the side wall. The composite adsorption mechanism (20) includes a vertically extending composite adsorption shell (21) with its opening facing upward. A filter element support column (22) is provided inside the composite adsorption shell (21) and is arranged coaxially with it. Multiple partition ring plates (221) arranged along the horizontal plane are fixed on the filter element support column (22). Multiple radial partition plates (222) arranged along the radial plane of the filter element support column (22) are fixed between two adjacent partition ring plates (221). A filter element placement chamber (220) is formed between two adjacent radial partition plates (222). The filter element placement chamber (220) contains a filter element receiving shell (23) with the same shape as the filter element, and the filter element receiving shell (23) is filled with adsorption and purification filler (230). The pretreatment output pipe (13) is connected to the bottom of the composite adsorption cylinder shell (21) through a pipe; The catalytic purification mechanism (30) includes a vertically extending catalytic flow tube shell (31), and a catalytic support column (310) coaxial with the catalytic flow tube shell (31) is fixed inside the catalytic flow tube shell (31). Multiple sets of catalytic heating plates (32) and multiple ring catalysts (33) are fixed on the catalytic support column (310). The upper end of the composite adsorption shell (21) is connected to the bottom of the catalytic flow shell (31) through a pipe.

2. The semiconductor waste gas adsorption and purification device according to claim 1, characterized in that, An adsorption input chamber (201) is formed between the lowest dividing ring plate (221) and the bottom of the composite adsorption cylinder shell (21). A composite adsorption input pipe (211) connected to the adsorption input chamber (201) is fixed on the outside of the composite adsorption cylinder shell (21). The composite adsorption input tube (211) is connected to the pretreatment output tube (13); The filter element support column (22) is fixed with a top sealing ring plate (223) near the upper end. The outer edge of the top sealing ring plate (223) is sealed to the inner wall of the composite adsorption cylinder shell (21). An adsorption output chamber (202) is formed between the top sealing ring plate (223) and the uppermost partition ring plate (221). A composite adsorption output pipe (212) connected to the adsorption output chamber (202) is fixed on the outside of the composite adsorption cylinder shell (21). A catalytic input chamber (301) is formed at the bottom of the catalytic flow tube shell (31). A catalytic purification input tube (311) connected to the catalytic input chamber (301) is fixed on the outside of the catalytic flow tube shell (31). The catalytic purification input tube (311) is connected to the composite adsorption output tube (212). A catalytic output chamber (302) is formed at the top of the catalytic flow tube shell (31), and a catalytic purification output tube (312) connected to the catalytic output chamber (302) is fixed on the outside of the catalytic flow tube shell (31).

3. The semiconductor waste gas adsorption and purification device according to claim 2, characterized in that, The tangential output pipe (121) extends along the tangential direction of the inner sidewall of the pretreatment input pipe (12); The pretreatment input pipe (12) is connected to an air conveyor (15) at one end outside the pretreatment flow pipe shell (11). The input end of the air conveyor (15) is connected to the exhaust gas source, and the output end of the air conveyor (15) is connected to the pretreatment input pipe (12) through a rotary joint (151). Multiple sets of swirl-driven blades (122) are fixed on the portion of the pretreatment input pipe (12) located inside the pretreatment flow tube shell (11), and each set of swirl-driven blades (122) is evenly distributed around the circumference of the pretreatment input pipe (12). The pretreatment input pipe (12) is fixed with a conical guide shroud (123) at one end inside the pretreatment flow tube shell (11).

4. The semiconductor waste gas adsorption and purification device according to claim 1, characterized in that, Inside the pretreatment flow tube shell (11), a separation guide ring (112) is fixed at the impurity discharge communication hole (141), and an impurity separation channel (110) is formed between the separation guide ring (112) and the inner side wall of the pretreatment flow tube shell (11). An annular impurity filter plate (113) is fixed at one end of the impurity separation channel (110) away from the pretreatment input pipe (12).

5. The semiconductor waste gas adsorption and purification device according to claim 3, characterized in that, The separator ring plate (221) has multiple composite adsorption flow holes (224) that run vertically through it. The top and bottom of the filter element housing (23) are porous hollow structures that run vertically through it. The inner wall of the filter element housing (23) is surrounded by a layer of non-woven fabric. The adsorption and purification filler (230) is filled inside the non-woven fabric.

6. The semiconductor waste gas adsorption and purification device according to claim 1, characterized in that, The composite adsorption shell (21) is fixed with an upward-facing lifting drive fixed cylinder (241) on the outside. The lifting drive fixed cylinder (241) is slidably connected with an downward-facing lifting drive sliding cylinder (242) inside. The top of the lifting drive sliding cylinder (242) is fixed with a horizontally arranged lifting connecting balance bar (243). One end of the lifting connecting balance bar (243) is fixedly connected to the top of the filter element support column (22) through a lifting connecting plate (244). The other end of the lifting connecting balance bar (243) is fixed with a balance counterweight (245). The lifting drive fixed cylinder (241) is provided with a lifting drive rod (246) for driving the lifting drive sliding cylinder (242) to move up and down.

7. The semiconductor waste gas adsorption and purification device according to claim 1, characterized in that, The circular catalyst (33) is a circular ceramic support. The circular catalyst (33) has multiple exhaust gas catalytic through holes (330) that run through its axis. The inner surface of the exhaust gas catalytic through holes (330) is loaded with a layer of noble metal palladium.

8. The semiconductor waste gas adsorption and purification device according to claim 1, characterized in that, Each group of catalytic heating plates (32) is evenly distributed around the catalytic support column (310), and multiple groups of catalytic heating plates (32) and multiple ring catalysts (33) are arranged alternately along the axial direction of the catalytic support column (310).

9. A method for adsorbing and purifying semiconductor waste gas, based on the semiconductor waste gas adsorption and purification device according to claim 5, characterized in that, Includes the following steps: S1. Exhaust gas pretreatment: Semiconductor exhaust gas is transported to the pretreatment input pipe (12) by an air conveyor (15). The semiconductor exhaust gas in the pretreatment input pipe (12) is ejected from multiple tangential output pipes (121) and enters the pretreatment flow tube shell (11). The jet airflow from the multiple tangential output pipes (121) can drive the pretreatment input pipe (12) to rotate. The semiconductor waste gas in the pretreatment flow tube shell (11) swirls around its axis and flows toward the pretreatment output tube (13); Under the action of centrifugal force, the dust and water vapor in the semiconductor exhaust gas will be thrown towards the inner wall of the pretreatment flow tube shell (11), and the dust and water vapor in the semiconductor exhaust gas will enter the impurity discharge pipe (14) through the impurity discharge communication hole (141). The semiconductor exhaust gas, from which dust and water vapor are separated, is discharged through the pretreatment output pipe (13); S2, Waste gas composite adsorption treatment: Semiconductor waste gas discharged from the pretreatment output pipe (13) then enters the interior of the composite adsorption cylinder shell (21) through the composite adsorption input pipe (211). The semiconductor waste gas flows from bottom to top inside the composite adsorption cylinder shell (21). The semiconductor waste gas passes through the composite adsorption flow hole (224), the side wall of the filter element housing shell (23), and the adsorption purification packing (230) wrapped in the non-woven fabric in sequence. The adsorption purification packing (230) is used to adsorb and purify the semiconductor waste gas. The adsorption and purification packing (230) between two adjacent partition ring plates (221) is a single layer. The multilayer adsorption and purification packing (230) consists of modified activated alumina adsorbent, porous molecular sieve adsorbent and activated carbon fiber adsorbent from bottom to top. After being purified by adsorption, the semiconductor waste gas is finally discharged from the composite adsorption output pipe (212) at the top of the composite adsorption cylinder shell (21); S3, Catalytic oxidation deep treatment: Semiconductor waste gas discharged from the composite adsorption output pipe (212) then enters the catalytic flow tube shell (31) through the catalytic purification input pipe (311), and the semiconductor waste gas flows from bottom to top in the catalytic flow tube shell (31). Turn on the catalytic heating plate (32) to heat the semiconductor waste gas. The heated semiconductor waste gas flows through the honeycomb structure ring catalyst (33). Under the high temperature and the catalytic action of the ring catalyst (33), the organic pollutants in the semiconductor waste gas are decomposed.

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