A grinding wheel, grinding equipment and wafer manufacturing method

Abstract

This invention provides a grinding wheel, a grinding apparatus, and a wafer manufacturing method. The grinding wheel includes a main body and a grinding part. The top surface of the grinding part is a plane perpendicular to the axis of the main body. The bottom surface of the grinding part has a first grinding surface inclined away from the top surface and a second grinding surface inclined towards the top surface, with one end connected to the first grinding surface. The other end of the second grinding surface is connected to the main body. The distance from the end of the first grinding surface near the main body to the top surface of the grinding part is greater than the distance from the end of the second grinding surface near the main body to the top surface of the grinding part. The first grinding surface has a first acute angle with a reference plane, and the second grinding surface has a second acute angle with the reference plane, the second acute angle being smaller than the first acute angle. The reference plane is perpendicular to the axis of the main body. The grinding wheel is used to grind the wafer in the wafer manufacturing process to achieve edge removal. The application of the grinding wheel can improve the edge quality of the manufactured wafer.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor, and particularly relates to a grinding wheel, a grinding device and a wafer manufacturing method. BACKGROUND

[0002] SOI (Silicon on Insulator) technology realizes the medium isolation of the components in integrated circuits by introducing a buried layer of silicon dioxide between the silicon substrate and the top layer of silicon thin film, completely eliminates the parasitic latch effect of bulk silicon SMOS circuit, and also significantly reduces the parasitic capacitance, improves the integration density and running speed. It has the core advantages of small short channel effect and simple process, and is particularly suitable for low-voltage and low-power circuits, and is one of the mainstream technologies of deep submicron integrated circuits.

[0003] BESOI (Backside Etching) is a technology for preparing SOI material by low-temperature bonding a device wafer with a support wafer and then etching or grinding the device layer from the back. Its core feature is that it can obtain a top layer of silicon thin film with good quality. Grinding the device layer to achieve edge removal is one of the important steps of BESOI technology. However, in the prior art, when the device layer is ground, edge collapse abnormalities often occur within 1.5 mm of the edge of the device layer, resulting in defects such as holes and pits in the edge of the device layer. SUMMARY

[0004] The present application aims to provide a grinding wheel, a grinding device and a wafer manufacturing method to solve the above technical problems.

[0005] To achieve the above-mentioned purpose, the present application provides a grinding wheel, comprising: a cylindrical main body part; and a grinding part provided on the outer peripheral surface of the main body part; the top surface of the grinding part is a plane perpendicular to the axis of the main body part, the bottom surface of the grinding part is formed with a first grinding surface inclined towards the direction away from the top surface of the grinding part and a second grinding surface inclined towards the direction close to the top surface of the grinding part and connected at one end with the first grinding surface, the other end of the second grinding surface is connected with the main body part, the distance from the end of the first grinding surface close to the main body part to the top surface of the grinding part is greater than the distance from the end of the second grinding surface close to the main body part to the top surface of the grinding part; the first grinding surface has a first acute angle with a reference plane, the second grinding surface has a second acute angle with the reference plane, the second acute angle is smaller than the first acute angle, and the reference plane is perpendicular to the axis of the main body part.

[0006] Optionally, the angle of the first acute angle is 30°-45°.

[0007] Optionally, the angle of the second acute angle is 5°-15°.

[0008] Optionally, the width of the projection of the first grinding surface onto the top surface of the grinding part is 1mm to 1.2mm, and the width of the projection of the second grinding surface onto the top surface of the grinding part is 1.8mm to 2mm.

[0009] Optionally, there are multiple grinding parts, and the multiple grinding parts are spaced apart along the axial direction of the main body.

[0010] Optionally, the mesh size of the first grinding surface and the second grinding surface is 800 mesh to 2000 mesh.

[0011] To achieve the above objectives, the present invention also provides a grinding apparatus, including the grinding wheel as described above.

[0012] To achieve the above objectives, the present invention also provides a wafer manufacturing method based on the aforementioned grinding wheel. The wafer manufacturing method includes: providing a wafer blank, the wafer blank including mutually bonded support sheets and device wafer blanks; placing the wafer blank on the grinding wheel with the device wafer blank facing the bottom surface of the grinding section, and grinding the device wafer blank with a first grinding surface and a second grinding surface to grind a portion of the device wafer blank and form a notch matching the first grinding surface and the second grinding surface; and performing edge single-sided etching on the ground wafer blank.

[0013] Optionally, when the wafer is placed on the grinding wheel, the wafer is perpendicular to the axis of the main body, and the edge of the wafer is partially located on the side of the intersection line of the first grinding surface and the second grinding surface closer to the main body.

[0014] Optionally, when the first grinding surface and the second grinding surface grind the wafer, the grinding wheel rotates at a speed of 8000 rpm to 9000 rpm, and the wafer rotates at a linear speed of 10 mm / s to 25 mm / s.

[0015] Compared with the prior art, the grinding wheel, grinding equipment and wafer manufacturing method of the present invention have the following advantages: The aforementioned grinding wheel includes a cylindrical main body and a grinding part disposed on the outer peripheral surface of the main body; the top surface of the grinding part is a plane perpendicular to the axis of the main body, the bottom surface of the grinding part is formed with a first grinding surface inclined in a direction away from the top surface of the grinding part and a second grinding surface inclined in a direction close to the top surface of the grinding part and connected at one end to the first grinding surface, the other end of the second grinding surface is connected to the main body, the distance from the end of the first grinding surface near the main body to the top surface of the grinding part is greater than the distance from the end of the second grinding surface near the main body to the top surface of the grinding part; the first grinding surface has a first acute angle with the reference plane, the second grinding surface has a second acute angle with the reference plane, the second acute angle is smaller than the first acute angle, and the reference plane is perpendicular to the axis of the main body. The grinding wheel is used to grind the wafer during the wafer manufacturing process to remove the edges. The application of the grinding wheel can increase the thickness of the residual silicon layer at the edge of the wafer, reduce or even avoid edge chipping, and improve the quality of the wafer. Attached Figure Description

[0016] The accompanying drawings are provided to better understand the invention and are not intended to unduly limit the scope of the invention.

[0017] Figure 1 This is a schematic diagram of the structure of a grinding wheel provided according to an embodiment of the present invention.

[0018] Figure 2 yes Figure 1 The enlarged schematic diagram of point A on the grinding wheel is shown.

[0019] Figure 3 This is a flowchart of a wafer manufacturing method provided by the present invention according to an embodiment.

[0020] Figure 4 This is a schematic diagram of the structure of the wafer substrate used in the wafer manufacturing method provided by an embodiment of the present invention.

[0021] Figure 5 This is a schematic diagram of a wafer manufacturing method according to an embodiment of the present invention, in which the device wafer of the wafer is oriented toward the grinding section.

[0022] Figure 6 This is a schematic diagram illustrating the process of polishing a device wafer on a wafer in a wafer manufacturing method according to an embodiment of the present invention, where the first polishing surface and the second polishing surface of the polishing unit polish the wafer.

[0023] Figure 7 This is a schematic diagram of a wafer transition wafer in a wafer manufacturing method according to an embodiment of the present invention.

[0024] Figure 8 This is a schematic diagram of the structure of a wafer manufactured by a wafer manufacturing method according to an embodiment of the present invention.

[0025] Figure 9 This is a schematic diagram of the edge morphology of a wafer produced by a grinding wheel according to an embodiment of the present invention.

[0026] Figure 10 This is a schematic diagram of the edge morphology of a wafer produced by a grinding wheel according to another embodiment of the present invention.

[0027] Figure 11 This is a structural schematic diagram of a comparative grinding wheel provided by the present invention based on a pair of proportions.

[0028] Figure 12 This is a schematic diagram of the edge morphology of a wafer produced by a comparative grinding wheel provided according to a pair of proportions in this invention.

[0029] [The reference numerals are explained as follows]: 100-grinding wheel, 101-reference plane, 110-first main body, 120-first grinding part, 1201-first grinding surface, 1202-second grinding surface, 200-wafer, 300-wafer wafer, 310-support sheet, 320-device wafer, 3201-notch, 400-comparison grinding wheel, 410-second main body, 420-second grinding part, 421-third grinding surface, 422-fourth grinding surface. Detailed Implementation

[0030] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show components related to the present invention and are not drawn according to the actual number, shape, and size of components in the actual implementation. In the actual implementation, the type, quantity, and proportion of each component can be arbitrarily changed, and the component layout may also be more complex.

[0031] Furthermore, while each embodiment described below possesses one or more technical features, this does not imply that users of the present invention must simultaneously implement all technical features in any embodiment, or can only separately implement some or all technical features in different embodiments. In other words, provided it is feasible, those skilled in the art can, based on the disclosure of the present invention and depending on design specifications or implementation requirements, selectively implement some or all technical features in any embodiment, or selectively implement a combination of some or all technical features in multiple embodiments, thereby increasing the flexibility in implementing the present invention.

[0032] As used herein, the singular forms “a,” “an,” and “the” include plural objects, and the plural form “multiple” includes two or more objects, unless otherwise expressly indicated. As used herein, the term “or” is generally used to include the meaning of “and / or,” unless otherwise expressly indicated, and the terms “installed,” “connected,” and “linked” should be interpreted broadly, for example, as a fixed connection, a detachable connection, or an integral connection. Connections can be mechanical or electrical. Connections can be direct or indirect through an intermediate medium, and can be internal communication between two elements or an interaction between two elements. Relational terms such as “first,” “second,” etc., are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations, nor do they indicate or imply relative importance or implicitly specify the number of indicated technical features. It should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," and "circumferential," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention. Those skilled in the art can understand the specific meaning of the above terms in the present invention according to the specific circumstances.

[0033] The purpose of this invention is to provide a grinding wheel used in the wafer manufacturing process to grind raw wafers to remove edges, reduce edge chipping, and improve the quality of the resulting wafers. The wafers include, but are not limited to, SOI wafers.

[0034] To make the objectives, advantages, and features of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, and are only used to facilitate and clearly illustrate the objectives of the embodiments of the present invention. The same or similar reference numerals in the drawings represent the same or similar parts.

[0035] Figure 1 This diagram illustrates the structure of the grinding wheel 100 provided in some embodiments of the present invention. Figure 2 yes Figure 1 Enlarged diagram of point A in the diagram.

[0036] like Figure 1 and Figure 2 As shown, the grinding wheel 100 includes a main body and a grinding part. For ease of description, the main body of the grinding wheel 100 provided in this embodiment of the invention is referred to as the first main body 110, and the grinding part of the grinding wheel 100 is referred to as the first grinding part 120. The first main body 110 has a cylindrical structure. The first grinding part 120 is disposed on the outer peripheral surface of the first main body 110. The top surface of the first grinding part 120 is a plane perpendicular to the axis of the first main body 110. The bottom surface of the first grinding part 120 has a first grinding surface 1201 inclined away from the top surface of the first grinding part 120 and a second grinding surface 1202 inclined towards the top surface of the first grinding part 120 and connected at one end to the first grinding surface 1201. The other end of the second grinding surface 1202 is connected to the first main body 110. The distance from the end of the first grinding surface 1201 near the first main body 110 to the top surface of the first grinding part 120 is greater than the distance from the end of the second grinding surface 1202 near the first main body 110 to the top surface of the first grinding part 120. The first grinding surface 1201 has a first acute angle α with the reference plane 101, and the second grinding surface 1202 has a second acute angle β with the reference plane 101, the second acute angle β being smaller than the first acute angle α. The reference plane 101 is perpendicular to the axis of the first main body 110.

[0037] It is understood that the top and bottom surfaces of the first grinding portion 120 are axially opposite to those of the first main body portion 110. Figure 1 and Figure 2 In the orientation shown, the upper surface of the first grinding part 120 is the top surface and the lower surface is the bottom surface.

[0038] The grinding wheel 100 is used in the fabrication of wafer 200 (e.g., ...). Figure 8 As shown) during the process of processing the wafer 300 (e.g. Figure 4The wafer 200 is polished (as shown) to remove edges and effectively reduce edge chipping, thus improving the quality of the resulting wafer 200. In this embodiment of the invention, the wafer 200 may be an SOI wafer. It is readily understood that when the wafer 200 is an SOI wafer, the wafer 300 includes a support sheet 310 and a device wafer 320 bonded together.

[0039] The following explanation will take the example of wafer 200 being an SOI wafer.

[0040] The process of wafer manufacturing based on the aforementioned grinding wheel 100 is as follows: Figure 3 As shown, it includes the following steps S1, S2 and S3.

[0041] Step S1 includes: providing the wafer 300.

[0042] Step S2 includes: placing the wafer 300 on the grinding wheel 100, and arranging the device wafer 320 facing the bottom surface of the first grinding section 120 (e.g., Figure 5 As shown), and the first grinding surface 1201 and the second grinding surface 1202 are brought into contact with the original device wafer 320 to grind the original device wafer 320 (as shown). Figure 6 As shown), a portion of the original device wafer 320 is ground away, forming a notch 3201 that matches the first grinding surface 1201 and the second grinding surface 1202 (as shown). Figure 7 (As shown).

[0043] Step S3 includes: performing edge single-sided etching on the wafer 300 that has been ground by the grinding wheel 100 to obtain the wafer 200.

[0044] Depend on Figure 7 As can be seen, in step S2, the notch 3201 is formed by grinding the first grinding surface 1201 and the second grinding surface 1202, which can leave a thicker silicon layer on the edge of the original device wafer 320 after grinding. This can reduce edge chipping during the subsequent single-sided edge etching process and improve the edge quality of the obtained wafer 200.

[0045] In practice, the angle of the first acute angle α is preferably selected within the range of 30° to 45°. The angle of the second acute angle β is preferably selected within the range of 5° to 15°.

[0046] It is understood that in this embodiment of the invention, the distance from the first grinding surface 1201 to the axis of the first main body 110 decreases along the direction from the top surface to the bottom surface of the first grinding part 120, and the distance from the second grinding surface 1202 to the axis of the first main body 110 increases along the direction from the top surface to the bottom surface of the first grinding part 120.

[0047] When the first grinding surface 1201 and the second grinding surface 1202 are projected onto the top surface of the first grinding part 120 along the axis of the first main body 110, the width of the projection of the first grinding surface 1201 onto the top surface of the first grinding part 120 is X1, and the width of the projection of the second grinding surface 1202 onto the top surface of the first grinding part 120 is X2. The values ​​of X1 and X2 are determined as needed. In a non-limiting example, the width X1 of the projection of the first grinding surface 1201 onto the top surface of the first grinding part 120 is 1 mm to 1.2 mm, and the width X2 of the projection of the second grinding surface 1202 onto the top surface of the first grinding part 120 is 1.8 mm to 2 mm. Furthermore, the grit number of the first grinding surface 1201 and the second grinding surface 1202 can be selected within the range of 800 grit to 2000 grit.

[0048] Please return to the reference. Figure 1 The grinding wheel 100 preferably includes a plurality of first grinding portions 120, which are spaced apart along the axial direction of the first main body 110. This allows the grinding wheel 100 to grind a plurality of wafers 300 simultaneously, improving production efficiency.

[0049] In the case where the grinding wheel 100 includes a plurality of first grinding sections 120, the top surface of one of two adjacent first grinding sections 120 is arranged face-to-face with the bottom surface of the other first grinding section 120, so that when the grinding wheel 100 grinds a plurality of wafers 300 simultaneously, adjacent wafers 300 are isolated. Furthermore, the minimum distance h1 between two adjacent first grinding sections 120 should not be less than the thickness of the wafer 300, so that when one of the two adjacent first grinding sections 120 is used to grind the wafer 300, the support sheet 310 is prevented from contacting the other of the two adjacent first grinding sections 120.

[0050] When the thickness of both the support sheet 310 and the device substrate 320 is 774µm to 777µm, the minimum distance h1 between two adjacent first grinding portions 120 can be selected within the range of 1.8mm to 3mm. Furthermore, the minimum axial dimension h2 of the first grinding portion 120 in the first main body 110 can be greater than or equal to 2mm.

[0051] A second objective of this invention is to provide a grinding device, which includes the grinding wheel 100 as described above.

[0052] A third objective of this invention is to provide a wafer fabrication method for fabricating the wafer 200. The flowchart of the wafer fabrication method is as follows: Figure 3 As shown, it includes steps S1, S2 and S3 as described above.

[0053] The wafer 300 is manufactured using existing technology. In an optional example, the support sheet 310 and the device wafer 320 are first bonded together by thermal oxidation, and then subjected to thermal hardening treatment to obtain the wafer 300. The thermal hardening treatment temperature is 900℃~1250℃, the time is 1h~3h, and the atmosphere during thermal hardening is a mixture of oxygen and inert gas, or a mixture of hydrogen and inert gas, wherein the inert gas includes, but is not limited to, at least one of argon and helium.

[0054] Furthermore, the combined off-oriendation angle of the support sheet 310 and the device substrate 320 can be selected from 0.1° to 0.6°, preferably from 0.2° to 0.4°. The thickness of the support sheet 310 is selected from 773µm to 777µm, and its total thickness deviation (TTV) is less than 0.4µm. The thickness of the device substrate 320 is selected from 773µm to 777µm, and its total thickness deviation is less than 0.4µm.

[0055] When the grinding wheel 100 grinds the wafer 320, the wafer 300 is perpendicular to the axis of the first main body 110, and the edge of the wafer 320 is partially located on the side of the intersection line of the first grinding surface 1201 and the second grinding surface 1202 closer to the first main body 110. Furthermore, during the grinding process, the grinding wheel 100 rotates at a speed of 8000 rpm to 9000 rpm and also moves along the direction from the wafer 320 towards the support plate 310, while the wafer 300 rotates at a linear velocity of 10 mm / s to 25 mm / s.

[0056] Step S3 can be performed using commercially available Spin-D solution in accordance with existing technology, and will not be elaborated here.

[0057] The effects of the grinding wheel 100 and wafer manufacturing method provided by the present invention will be explained next through several embodiments and comparative examples.

[0058] In Embodiment 1, the wafer 200 is manufactured using the aforementioned grinding wheel 100 and the wafer manufacturing method. The wafer 200 is an SOI wafer. The first acute angle α is 45°, the second acute angle β is 20°, the minimum distance between two adjacent first grinding sections 120 is 1.8 mm, and the mesh size of the first grinding surface 1201 and the second grinding surface 1202 is 800 mesh. During grinding, the grinding wheel 100 rotates at 9000 rpm, and the wafer 300 rotates at a linear velocity of 25 mm / s.

[0059] The edge morphology of the wafer 200 obtained in this embodiment is as follows: Figure 9 As shown. By Figure 9 As can be seen, the edge of the wafer 200 has a small number of holes and depressions.

[0060] In Example 2, the grinding wheel 100 and the wafer 200 described in the aforementioned wafer manufacturing method are also used, and the wafer 200 is an SOI wafer. The only difference between this example and Example 1 is that the angle of the second acute angle β is 15°.

[0061] The edge morphology of the wafer 200 prepared in this embodiment is as follows: Figure 10 As shown. By Figure 10 As can be seen, the edges of the wafer 200 are flat, with almost no holes or depressions.

[0062] In Comparative Example 1, the following is used: Figure 11 The wafer 200, which is an SOI wafer, is prepared using a comparative grinding wheel 400.

[0063] refer to Figure 11The comparison grinding wheel 400 includes a second main body 410 and a second grinding part 420. The second main body 410 has a cylindrical structure, and the second grinding part 420 is disposed on the outer peripheral surface of the second main body 410. The top surface of the second grinding part 420 is a plane perpendicular to the axis of the second main body 410, and the bottom surface of the second grinding part 420 is partially inclined away from the top surface of the second grinding part 420 and forms a third grinding surface 421. The bottom surface of the second grinding part 420 is also partially formed into a fourth grinding surface 422 perpendicular to the axis of the second main body 410 and connected at one end to the third grinding surface 421. The other end of the fourth grinding surface 422 is connected to the second main body 410. A third acute angle γ is formed between the third grinding surface 421 and the fourth grinding surface 422, and the angle of the third acute angle γ is 45°. The mesh size of the third grinding surface 421 and the fourth grinding surface 422 is 800 mesh.

[0064] The process of manufacturing the wafer 200 using the aforementioned comparative grinding wheel 400 is as follows, including steps S10, S20 and S30.

[0065] Step S10 includes: providing the wafer 300.

[0066] Step S20 includes: placing the wafer 300 at the contrast grinding wheel 400, and oriented the device wafer 320 toward the second grinding section 420, and at least grinding the device wafer 320 with the third grinding surface 421.

[0067] Step S30 includes performing edge single-sided etching on the wafer 300 after the processing in step S20.

[0068] The edge morphology of the wafer 200 prepared in this comparative example is as follows: Figure 12 As shown. By Figure 12 As can be seen, the wafer 200 prepared in this comparative example has a large number of holes and depressions on its edges.

[0069] Compare Figure 9 , Figure 11 , Figure 12 As can be seen, in both Example 1 and Comparative Example 1, edge chipping occurred at the edges of the wafer 200. However, the degree of edge chipping in Example 1 was less than that in Comparative Example 1. Therefore, the edge quality of the wafer 200 prepared in Example 1 was superior to that prepared in Comparative Example 1. The edge of the wafer 200 prepared in Example 2 showed almost no edge chipping.

[0070] While the present invention has been disclosed above, it is not limited thereto. Those skilled in the art can make various modifications and variations to the present invention without departing from its spirit and scope. Therefore, if such modifications and variations fall within the scope of the claims and their equivalents, the present invention also intends to include such modifications and variations.

Claims

1. A grinding wheel characterized by, The grinding wheel comprises: a cylindrical body portion; and a grinding portion provided on an outer circumferential surface of the body portion, a top surface and a bottom surface of the grinding portion are opposite in an axial direction of the body portion, the top surface of the grinding portion is a plane perpendicular to an axis of the body portion, the bottom surface of the grinding portion is formed with a first grinding surface inclined toward a direction away from the top surface of the grinding portion and a second grinding surface inclined toward a direction close to the top surface of the grinding portion and connected with one end of the first grinding surface, the other end of the second grinding surface is connected with the body portion, a distance from an end of the body portion close to the top surface of the grinding portion to the first grinding surface is greater than a distance from the end of the body portion close to the top surface of the grinding portion to the second grinding surface, the first grinding surface has a first acute angle with a reference plane, the second grinding surface has a second acute angle with the reference plane, the second acute angle is smaller than the first acute angle, and the reference plane is perpendicular to the axis of the body portion. The device wafer raw piece is ground by the first grinding surface and the second grinding surface, so that the device wafer raw piece is partially ground and forms a notch matched with the first grinding surface and the second grinding surface. The first acute angle is 30°-45°.

2. The grinding wheel of claim 1, wherein The second acute angle is 5°-15°.

3. The grinding wheel of claim 2, wherein A projection of the first grinding surface on the top surface of the grinding portion has a width of 1mm-1.2mm, and a projection of the second grinding surface on the top surface of the grinding portion has a width of 1.8mm-2mm.

4. The grinding wheel of claim 1, wherein A plurality of the grinding portions are arranged along the axial direction of the body portion.

5. The grinding wheel of claim 1, wherein The first grinding surface and the second grinding surface have a mesh number of 800 mesh-2000 mesh.

6. The grinding wheel of claim 1, wherein The grinding wheel comprises the grinding wheel according to any one of claims 1-5.

7. A grinding apparatus characterized by comprising: The wafer manufacturing method comprises:

8. A wafer manufacturing method performed based on the grinding wheel according to any one of claims 1 to 5, characterized by, providing a wafer raw piece comprising a support wafer and a device wafer raw piece bonded to each other; placing the wafer raw piece at the grinding wheel, and making the device wafer raw piece face the bottom surface of the grinding portion, and making the first grinding surface and the second grinding surface grind the device wafer raw piece, so that the device wafer raw piece is partially ground and forms a notch matched with the first grinding surface and the second grinding surface; and performing edge single-side etching on the ground wafer raw piece. When the wafer raw piece is placed at the grinding wheel, the wafer raw piece is perpendicular to the axis of the body portion, and an edge portion of the device wafer raw piece is partially located on a side of an intersection line of the first grinding surface and the second grinding surface close to the body portion.

9. The wafer manufacturing method according to claim 8, wherein When the first grinding surface and the second grinding surface grind the device wafer raw piece, the grinding wheel rotates at a speed of 8000rpm-9000rpm, and the wafer raw piece rotates at a linear speed of 10mm / s-25mm / s.

10. The wafer manufacturing method according to claim 8, wherein ​

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