Substrate table structure and seed layer deposition equipment and method of TGV substrate

Abstract

The invention discloses a substrate table structure and a seed layer deposition device and method of a TGV substrate. The substrate table structure comprises a substrate table body, a first substrate, a second substrate and a third substrate, the insulating supporting part is arranged on the upper surface of the substrate table body, and the insulating supporting part is configured to be suitable for fitting and supporting the TGV substrate; the first jacking part is configured to be capable of upwards penetrating through the insulating supporting part so as to jack the TGV substrate; and the second jacking part is configured to be capable of jacking the insulating supporting part upwards until the insulating supporting part is separated from the substrate table body. According to the substrate table, the insulating supporting part is arranged to fit and support the TGV substrate, so that abnormal ignition between the TGV substrate and the substrate table body can be effectively prevented; besides, the insulating supporting part and the substrate table body are designed to be separable, so that when the insulating supporting part is replaced, the insulating supporting part can be jacked up through the second jacking part, then the insulating supporting part is taken away and replaced, high efficiency and convenience are achieved, and the production efficiency can be improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor packaging technology, and in particular to a substrate stage structure, a seed layer deposition apparatus and method for TGV substrates. Background Technology

[0002] Through Glass Via (TGV) technology, leveraging the high-frequency, insulating, and thermally stable advantages of glass substrates, is becoming a disruptive solution for 5G communications, optoelectronics, and advanced packaging. Large-size TGV substrates, through material performance optimization, process innovation, and cost control, have become a core technology for overcoming the packaging bottleneck of computing chips. Their advantages in high-density interconnects, high-frequency signal transmission, and ultra-large-size packaging will accelerate the upgrading of computing power in fields such as AI and data centers, while simultaneously driving the extension of China's domestic semiconductor industry chain into the high-end packaging field.

[0003] One of the core process steps in TGV technology is through-hole metallization, which requires depositing a continuous metal seed layer film within the TGV via using PVD magnetron sputtering. In the PVD process, an RF bias is typically applied to the substrate stage, forming a plasma sheath above it. This accelerates the deposition of ionized metal target particles onto the sidewalls of the TGV via. However, because the substrate stage is metal and the TGV substrate is glass, a significant potential difference exists between them under the RF bias. If the back side of the TGV substrate (the side facing the substrate stage) is in direct contact with or very close to the substrate stage after the metal seed layer has been deposited, arcing anomalies can easily occur. Summary of the Invention

[0004] This application aims to address at least one of the technical problems existing in the prior art. To this end, this application proposes a substrate stage structure that can effectively prevent arcing abnormalities between the TGV substrate and the substrate stage body through an insulating support portion, and the insulating support portion is easy to replace, which helps to improve production efficiency.

[0005] This application also proposes a seed layer deposition apparatus for a TGV substrate including the above-described substrate stage structure.

[0006] This application also proposes a seed layer deposition method for the TGV substrate applied to the seed layer deposition apparatus of the aforementioned TGV substrate.

[0007] The substrate stage structure according to the first aspect of this application includes: Substrate table body; An insulating support portion is disposed on the upper surface of the substrate stage body, and the insulating support portion is configured to fit and support the TGV substrate. A first lifting section is configured to pass upward through the insulating support section to lift the TGV substrate; The second lifting section is configured to lift the insulating support section upwards until it separates from the substrate stage body.

[0008] The substrate stage structure according to the embodiments of this application has at least the following beneficial effects: By providing an insulating support on the substrate stage body to adhere to and support the TGV substrate, the TGV substrate and the substrate stage body can be separated during the deposition of the metal seed layer on the TGV substrate. Regardless of whether the side of the TGV substrate facing the substrate stage body has been deposited with a metal seed layer, arcing abnormalities between the TGV substrate and the substrate stage body can be effectively prevented. In addition, the separable design between the insulating support and the substrate stage body allows the insulating support to be lifted by the second lifting part when it is replaced, and then removed and replaced. This is efficient and convenient, and helps to improve production efficiency.

[0009] According to some embodiments of this application, the first lifting part is vertically provided with a plurality of first lifting rods, and the insulating support part is vertically provided with a first clearance hole for the first lifting rods to pass through; Specifically, when the first lifting part moves upward, the plurality of first lifting rods lift the TGV substrate to move upward and horizontally.

[0010] According to some embodiments of this application, the plurality of first lifting rods are evenly distributed around the center of the substrate stage body.

[0011] According to some embodiments of this application, the second lifting part is vertically provided with a plurality of second lifting rods; When the second lifting part moves upward, the plurality of second lifting rods lift the insulating support part to move upward and horizontally.

[0012] According to some embodiments of this application, the plurality of second lifting rods are evenly distributed around the center of the substrate stage body.

[0013] According to some embodiments of this application, the insulating support portion is provided with an inorganic material layer to adhere to and support the TGV substrate.

[0014] According to some embodiments of this application, the inorganic material layer is made of one or more materials selected from glass, quartz, and ceramics.

[0015] According to some embodiments of this application, the thickness of the insulating support portion is 0.4mm-1.1mm.

[0016] A seed layer deposition apparatus for a TGV substrate according to a second aspect embodiment of this application includes: Vacuum cavity; The substrate stage structure of any of the above embodiments is disposed within the vacuum cavity; The conveying mechanism is configured to: enter the vacuum chamber to pick up and place the TGV substrate, and enter the vacuum chamber to pick up and place the insulating support portion.

[0017] The seed layer deposition method for a TGV substrate according to the third aspect of this application, applied to the seed layer deposition apparatus for the TGV substrate, includes the following steps: Deposit a predetermined number of TGV substrates; Lift the insulating support portion until it separates from the substrate stage body, and then move the insulating support portion out of the vacuum cavity; The new insulating support is transferred to the substrate stage body. Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0018] The present application will be further described below with reference to the accompanying drawings and embodiments, wherein: Figure 1 This is a schematic diagram of the substrate stage structure according to an embodiment of this application; Figure 2 This is a schematic diagram of the state when the second lifting part supports the insulating support part according to an embodiment of this application; Figure 3 This is a schematic diagram of the state when the insulating support portion is attached to the TGV substrate (the first surface has a metal seed layer deposited) according to an embodiment of this application; Figure 4 This is a schematic diagram of the state when the first lifting part supports the TGV substrate (the first surface has a metal seed layer deposited) in an embodiment of this application.

[0019] Icon labels: TGV substrate 10; substrate stage body 100; Insulating support part 200, first clearance hole 201; First lifting part 300, first lifting rod 301, first support 302; Second lifting section 400, second lifting rod 401, second support 402. Detailed Implementation

[0020] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0021] In the description of this application, it should be understood that the orientation descriptions, such as up, down, etc., are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0022] In the description of this application, "multiple" refers to two or more. The use of "first" and "second" is for the purpose of distinguishing technical features only and should not be construed as indicating or implying relative importance, or implicitly indicating the number of technical features indicated, or the order in which the technical features are indicated.

[0023] In the description of this application, unless otherwise expressly defined, terms such as "setup," "installation," and "connection" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this application in conjunction with the specific content of the technical solution.

[0024] One of the core process steps in TGV technology is through-hole metallization, which requires depositing a continuous metal seed layer film within the TGV via using PVD magnetron sputtering. In the PVD process, an RF bias is typically applied to the substrate stage, forming a plasma sheath above it. This accelerates the deposition of ionized metal target particles onto the sidewalls of the TGV via. However, because the substrate stage is metal and the TGV substrate is glass, a significant potential difference exists between them under the RF bias. If the back side of the TGV substrate (the side facing the substrate stage) is in direct contact with or very close to the substrate stage after the metal seed layer has been deposited, arcing anomalies can easily occur.

[0025] In response to this, this application proposes a substrate stage structure, a seed layer deposition apparatus and method for TGV substrates, which can effectively improve the above-mentioned problems.

[0026] The substrate stage structure, seed layer deposition apparatus and method for TGV substrates according to embodiments of this application are described below with reference to the accompanying drawings.

[0027] Reference Figure 1 As shown, a substrate stage structure according to an embodiment of this application includes a substrate stage body 100, an insulating support portion 200, a first lifting portion 300, and a second lifting portion 400.

[0028] The substrate stage body 100 is made of metal.

[0029] The insulating support portion 200 is made of insulating material and is disposed on the upper surface of the substrate stage body 100. The insulating support portion 200 is configured to fit and support the TGV substrate 10, thereby separating the TGV substrate 10 from the substrate stage body 100 (e.g., Figure 3 As shown in the figure, it can be understood that the insulating support 200 and the TGV substrate 10 are in surface contact, so even if the thickness of the TGV substrate 10 is less than 0.6 mm, there will be no problem of bending in the middle.

[0030] The first lifting portion 300 is configured to pass upward through the insulating support portion 200 to lift the TGV substrate 10, thereby separating the TGV substrate 10 from the insulating support portion 200 (e.g., Figure 4 As shown), the TGV substrate 10 can be removed at this time. It should be noted that when the TGV substrate 10 is not placed on the insulating support 200, the first lifting part 300 can move upward so that the upper end of the first lifting part 300 is higher than the upper surface of the insulating support 200 to receive the TGV substrate 10. After receiving the TGV substrate 10, the first lifting part 300 moves downward to reset, so that the TGV substrate 10 falls on the insulating support 200.

[0031] The second lifting section 400 is configured to lift the insulating support section 200 upwards until it separates from the substrate stage body 100 (e.g., ...). Figure 2 As shown), the insulating support 200 can be removed at this time. It should be noted that when the insulating support 200 is not placed on the substrate stage body 100, the second lifting part 400 can move upward so that the upper end of the second lifting part 400 is higher than the upper surface of the substrate stage body 100 to receive the insulating support 200. After receiving the insulating support 200, the second lifting part 400 moves downward to reset, so that the insulating support 200 falls on the upper surface of the substrate stage body 100.

[0032] It should also be noted that the first lifting part 300 and the second lifting part 400 are arranged horizontally offset, and their actions are independent of each other. Both have an initial position, and when they are in their respective initial positions, their upper ends do not protrude from the upper surface of the substrate stage body 100 (e.g., Figure 1 (As shown).

[0033] The method of using the substrate stage structure in this embodiment is as follows: First, the insulating support 200 is placed: the second lifting part 400 is moved upward so that the upper end of the second lifting part 400 is higher than the upper surface of the substrate stage body 100, and then the insulating support 200 is transferred onto the second lifting part 400. After that, the second lifting part 400 is moved downward to reset so that the insulating support 200 falls onto the upper surface of the substrate stage body 100. Next, the TGV substrate 10 is deposited: the first lifting part 300 moves upward so that its upper end is higher than the upper surface of the insulating support part 200. Then, the TGV substrate 10 is transferred onto the first lifting part 300. Afterward, the first lifting part 300 moves downward to reset, so that the TGV substrate 10 falls onto the insulating support part 200. Then, the TGV substrate 10 is deposited. The deposition operation includes depositing a metal seed layer on the upper surface of the TGV substrate 10 and in the TGV vias using PVD magnetron sputtering. After one side is deposited, the first lifting part 300 can be moved upward through the insulating support part 200 to lift the TGV substrate 10, so that the TGV substrate 10 is separated from the insulating support part 200. Then, the TGV substrate 10 is removed and flipped. After flipping, it is placed back onto the first lifting part 300, and the first lifting part 300 moves downward to reset, so that the TGV substrate 10 falls onto the insulating support part 200 (e.g., Figure 3 (as shown in the figure), and then a metal seed layer is deposited on the other side of the TGV substrate 10 and the TGV vias; it should be noted that the TGV vias of a TGV substrate 10 are deposited twice. During the deposition process, the sputtered metal seed layer will be deposited on the insulating support 200 through the TGV vias. When it accumulates to a certain extent, it will cause the risk of film peeling and arcing. Therefore, after the set number of TGV substrates 10 are deposited, the insulating support 200 needs to be replaced. The replacement operation is as follows: the second lifting part 400 lifts the insulating support 200 upward until it is separated from the substrate stage body 100, then removes the insulating support 200, replaces it with a new insulating support 200 and transfers it to the second lifting part 400, and then moves the second lifting part 400 downward to reset so that the new insulating support 200 falls on the upper surface of the substrate stage body 100.

[0034] The substrate stage structure of this application embodiment, by providing an insulating support portion 200 on the substrate stage body 100 to adhere to and support the TGV substrate 10, can separate the TGV substrate 10 and the substrate stage body 100 during the deposition of the metal seed layer on the TGV substrate 10. Regardless of whether the side of the TGV substrate 10 facing the substrate stage body 100 has been deposited with a metal seed layer, it can effectively prevent abnormal arcing between the TGV substrate 10 and the substrate stage body 100. In addition, the separable design between the insulating support portion 200 and the substrate stage body 100 allows the insulating support portion 200 to be lifted by the second lifting portion 400 when it is replaced, and then removed and replaced, which is efficient and convenient and helps to improve production efficiency.

[0035] It is understood that the substrate stage structure of this embodiment is applied in a seed layer deposition equipment for TGV substrates. It needs to be placed within a vacuum chamber. The separable design between the insulating support 200 and the substrate stage body 100 allows the insulating support 200 to be lifted by the second lifting part 400 when replacing it. Then, the insulating support 200 is removed and replaced by the conveying mechanism that transports the TGV substrate 10. The entire process can be carried out in a vacuum environment, enabling efficient and convenient replacement of the insulating support 200 during continuous production, thus improving production efficiency. It should be noted that breaking the vacuum environment requires 12-24 hours of vacuuming and reactivation time, which will severely impact production efficiency.

[0036] In some embodiments of this application, the substrate stage structure further includes a radio frequency bias source, and the substrate stage body 100 is grounded through the radio frequency bias source to provide radio frequency bias energy to the substrate stage body 100 to achieve the deposition of the metal seed layer.

[0037] In some embodiments of this application, the substrate stage structure further includes a first driving unit and a second driving unit. The first driving unit is driven to the first lifting unit 300 to drive the first lifting unit 300 to rise and fall. The second driving unit is driven to the second lifting unit 400 to drive the second lifting unit 400 to rise and fall. Both the first driving unit and the second driving unit can be hydraulic cylinders, pneumatic cylinders, electric push rods or other driving structures that meet the requirements. No specific limitation is made in this embodiment.

[0038] In some embodiments of this application, the insulating support portion 200 is also configured to block the lower end of the TGV via of the TGV substrate 10 to improve its insulation performance.

[0039] In some embodiments of this application, the insulating support portion 200 may be configured as a plate-like structure, so that the insulating support portion 200 may also be conveyed by the conveying mechanism for conveying the TGV substrate 10. The length and width of the insulating support portion 200 may be the same as the length and width of the TGV substrate 10, or the length and width of the insulating support portion 200 may be slightly larger than the length and width of the TGV substrate 10, so that the insulating support portion 200 can fit and support the entire TGV substrate 10, thereby improving the support stability of the TGV substrate 10.

[0040] In some embodiments of this application, the thickness of the insulating support portion 200 is 0.4mm-1.1mm. The minimum thickness of the insulating support portion 200 is limited to 0.4mm. This ensures sufficient distance between the TGV substrate 10 and the substrate stage body 100 to prevent arcing due to excessive proximity, while also preventing it from being too thin, which would hinder production and transport. The maximum thickness of the insulating support portion 200 is limited to 1.1mm to prevent excessive weight from affecting its transport. It should be noted that the insulating support portion 200 in this embodiment can be transported via a transport mechanism for the TGV substrate 10. This transport mechanism typically employs a robotic arm, using a lifting method for transport. If the insulating support portion 200 is too heavy, it may cause deformation of the robotic arm.

[0041] In some embodiments of this application, the insulating support portion 200 is provided with an inorganic material layer, the upper surface of which is horizontal for attaching and supporting the TGV substrate 10. It should be noted that the surface of the structure made of inorganic material is hard and flat, effectively preventing damage to the surface of the TGV substrate 10 and facilitating cleaning. Furthermore, inorganic materials have extremely high thermal stability, are not prone to thermal deformation, maintain shape and position stability, improve support accuracy, and prevent displacement of the TGV substrate 10 due to thermal deformation. In some specific embodiments, the entire insulating support portion 200 may be composed of an inorganic material layer.

[0042] In some embodiments of this application, the inorganic material layer of the insulating support 200 is made of one or more materials selected from glass, quartz and ceramic, wherein glass is a preferred material due to its lower cost.

[0043] In some embodiments of this application, reference is made to Figure 1 and Figure 4As shown, the first lifting part 300 is vertically provided with a plurality of first lifting rods 301, and the insulating support part 200 is vertically provided with first clearance holes 201 for the first lifting rods 301 to pass through. The first clearance holes 201 correspond one-to-one with the first lifting rods 301. When the first lifting part 300 moves upward, the plurality of first lifting rods 301 lift the TGV substrate 10 to move upward horizontally, thereby smoothly lifting the TGV substrate 10 and effectively preventing the TGV substrate 10 from shaking or shifting during the lifting process.

[0044] In addition, by setting multiple first lifting rods 301, it is convenient for the conveying mechanism (e.g., a robot arm) to convey the TGV substrate 10. During the conveying process, after the multiple first lifting rods 301 lift the TGV substrate 10 upward and move it horizontally until it is separated from the insulating support part 200, the conveying mechanism can be inserted between the multiple first lifting rods 301, and then the TGV substrate 10 is lifted upward and removed. The operation can be reversed when placing the TGV substrate 10.

[0045] In some embodiments of this application, a plurality of first lifting rods 301 are evenly distributed around the center of the substrate stage body 100, and the centers of the insulating support 200, the TGV substrate 10, and the substrate stage body 100 are aligned, so that the TGV substrate 10 can be stably and reliably lifted by the plurality of first lifting rods 301. The first lifting rods 301 can be provided in one or more groups, with each group having four first lifting rods 301 arranged in a rectangular array.

[0046] In some embodiments of this application, reference is made to Figure 1 As shown, the first lifting part 300 is also provided with a first bracket 302, and a plurality of first lifting rods 301 are provided at the upper end of the first bracket 302. The first bracket 302 is used to connect the first driving part.

[0047] In some embodiments of this application, reference is made to Figure 1 and Figure 2 As shown, the second lifting part 400 is vertically provided with multiple second lifting rods 401; wherein, when the second lifting part 400 moves upward, the multiple second lifting rods 401 lift the insulating support part 200 to move upward horizontally, thereby smoothly lifting the insulating support part 200 and effectively preventing the insulating support part 200 from shaking or shifting during the lifting process.

[0048] In addition, by setting multiple second lifting rods 401, it is convenient for the transfer mechanism (e.g., a robot arm) to transfer the insulating support 200. During transfer, after the multiple second lifting rods 401 lift the insulating support 200 upward and move it to separate it from the substrate stage body 100, the transfer mechanism can be inserted between the multiple second lifting rods 401, and then lift the insulating support 200 upward and remove it. The operation can be reversed when placing the insulating support 200.

[0049] In some embodiments of this application, a plurality of second lifting rods 401 are evenly distributed around the center of the substrate stage body 100, so that the insulating support 200 can be stably and reliably lifted by the plurality of second lifting rods 401. The second lifting rods 401 can be provided in one or more groups, with each group having four second lifting rods 401 distributed in a rectangular array.

[0050] In some embodiments of this application, reference is made to Figure 1 and Figure 2 As shown, the second lifting part 400 is also provided with a second bracket 402, and a plurality of second lifting rods 401 are provided at the upper end of the second bracket 402. The second bracket 402 is used to connect the second drive part.

[0051] In some embodiments of this application, a second clearance hole and a third clearance hole are vertically provided on the substrate stage body 100. The second clearance hole corresponds one-to-one with the first lifting rod 301 and is used for the first lifting rod 301 to pass through. The third clearance hole corresponds one-to-one with the second lifting rod 401 and is used for the second lifting rod 401 to pass through.

[0052] In some embodiments of this application, a positioning groove may be provided on the upper surface of the substrate stage body 100 for the insulating support 200 to be embedded and positioned to ensure its positional accuracy. In addition, in order to make the insulating support 200 smoothly embedded in the positioning groove, a bevel structure may be provided at the opening end of the positioning groove to guide the insulating support 200 to be embedded in the positioning groove.

[0053] It should be noted that the dimensions and positions of the first lifting part 300 and the second lifting part 400 should meet the requirement that their lifting and lowering do not interfere with each other. This embodiment does not impose specific limitations on this.

[0054] It should be noted that the first lifting rod 301 and the first bracket 302 can be connected in various ways, such as welding, plugging, or fastener connection, and this embodiment does not specifically limit this; the second lifting rod 401 and the second bracket 402 can also be connected in various ways, such as welding, plugging, or fastener connection, and this embodiment does not specifically limit this.

[0055] It should be noted that, since high heat may be generated during the deposition process, a corresponding cooling structure can be provided to cool the substrate stage structure. The cooling structure can take the form of arranging cooling pipes on the substrate stage body 100 and introducing a cooling medium. The cooling medium can be a liquid or a gas; when using a gas, an inert gas can be used. Of course, other forms of cooling can also be used, such as directly cooling the entire working environment, or other feasible forms, as long as the requirement of achieving the cooling function is met without affecting the deposition process. This embodiment does not impose specific limitations.

[0056] The following describes a substrate stage structure according to one specific embodiment of this application. The substrate stage structure includes: a substrate stage body 100, an insulating support portion 200, a first lifting portion 300, a second lifting portion 400, an RF bias source, a first driving portion, and a second driving portion.

[0057] The substrate stage 100 is made of metal and is grounded by an RF bias source to provide RF bias energy for the deposition of the metal seed layer.

[0058] The insulating support 200 is a plate-shaped structure made of glass and is disposed on the upper surface of the substrate stage body 100. The insulating support 200 is adapted to adhere to and support the TGV substrate 10 and block the lower end of the TGV through-hole of the TGV substrate 10, thereby separating the TGV substrate 10 from the substrate stage body 100. The insulating support 200 and the TGV substrate 10 are in surface contact, so even if the thickness of the TGV substrate 10 is less than 0.6 mm, there will be no problem of bending in the middle.

[0059] The length and width of the insulating support portion 200 are the same as those of the TGV substrate 10, so as to fit and support the entire TGV substrate 10 and improve support stability. The thickness of the insulating support portion 200 is 0.6mm, which ensures that there is sufficient distance between the TGV substrate 10 and the substrate stage body 100 to prevent arcing abnormalities, while also avoiding excessive weight of the insulating support portion 200 that would affect transmission.

[0060] The first lifting section 300 is vertically mounted and includes a first support 302 and four first lifting rods 301. The four first lifting rods 301 are vertically positioned at the upper end of the first support 302. The insulating support section 200 has first clearance holes 201 for the first lifting rods 301 to pass through; the two are one-to-one. The four first lifting rods 301 are evenly distributed around the center of the substrate stage body 100, and the centers of the insulating support section 200, the TGV substrate 10, and the substrate stage body 100 are aligned. When the first lifting section 300 moves upward, it lifts the TGV substrate 10 using the four first lifting rods 301.

[0061] The second lifting section 400 is vertically mounted and includes a second support 402 and four second lifting rods 401. The four second lifting rods 401 are vertically positioned at the upper end of the second support 402 and are evenly distributed around the center of the substrate stage body 100. When the second lifting section 400 moves upward, it lifts the insulating support section 200 via the four second lifting rods 401. The substrate stage body 100 has a second clearance hole and a third clearance hole. The second clearance hole corresponds one-to-one with the first lifting rod 301, allowing the first lifting rod 301 to pass through. The third clearance hole corresponds one-to-one with the second lifting rod 401, allowing the second lifting rod 401 to pass through.

[0062] The first drive unit is connected to the first bracket 302 to drive the first bracket 302 to rise and fall, thereby driving the first lifting unit 300 to rise and fall. The first drive unit is a hydraulic cylinder or a pneumatic cylinder.

[0063] The second drive unit is connected to the second bracket 402 to drive the second bracket 402 to rise and fall, thereby driving the second lifting unit 400 to rise and fall. The second drive unit is a hydraulic cylinder or a pneumatic cylinder.

[0064] This application also proposes a seed layer deposition apparatus for a TGV substrate, comprising: a vacuum chamber, a substrate stage structure as described in the above embodiments, and a transfer mechanism.

[0065] The vacuum chamber is equipped with a transfer port for the transfer mechanism to enter and exit; a closable valve is installed at this transfer port. It should be noted that the vacuum chamber connects to other process chambers or transition chambers in a vacuum environment via the transfer port, but does not connect to the external environment.

[0066] The substrate stage structure is disposed within a vacuum chamber; wherein, the substrate stage body 100, the insulating support part 200, the first lifting part 300, and the second lifting part 400 of the substrate stage structure are all located within the vacuum chamber, while the first driving part and the second driving part can be disposed within the vacuum chamber or outside the vacuum chamber. When the latter is used, it is easier to maintain; in addition, a support structure for supporting the substrate stage body 100 is disposed within the vacuum chamber.

[0067] The transfer mechanism is configured to: enter the vacuum chamber to pick up and place the TGV substrate 10, and enter the vacuum chamber to pick up and place the insulating support portion 200. The transfer mechanism may employ a robotic arm to enter and exit the vacuum chamber through the transfer port. It should be noted that all operations of the transfer mechanism are performed in a vacuum environment. The structure and principle of the transfer mechanism are existing technology known to those skilled in the art and will not be described in detail here.

[0068] Specifically, the placement and removal of the insulating support 200 is as follows: When placing the insulating support 200, the second lifting part 400 moves upward so that the upper end of the second lifting rod 401 is higher than the upper surface of the substrate stage body 100. Then, the conveying mechanism transfers the insulating support 200 onto the multiple second lifting rods 401. After that, the second lifting part 400 moves downward to reset, so that the insulating support 200 falls onto the upper surface of the substrate stage body 100. Removing the insulating support 200 only requires the reverse operation, which will not be described in detail here.

[0069] The TGV substrate 10 is placed and removed as follows: When placing the TGV substrate 10, the first lifting part 300 moves upward so that the first lifting rod 301 passes through the first clearance hole 201 of the insulating support part 200. Then, the conveying mechanism transfers the TGV substrate 10 onto the plurality of first lifting rods 301. After that, the first lifting part 300 moves downward to reset, so that the TGV substrate 10 falls onto the insulating support part 200. When removing the TGV substrate 10, the operation can be reversed, which will not be described in detail here.

[0070] In this embodiment, by providing an insulating support portion 200 on the substrate stage body 100 to adhere to and support the TGV substrate 10, the TGV substrate 10 and the substrate stage body 100 can be separated during the deposition of the metal seed layer on the TGV substrate 10. Regardless of whether the side of the TGV substrate 10 facing the substrate stage body 100 has been deposited with a metal seed layer, arcing abnormalities between the TGV substrate 10 and the substrate stage body 100 can be effectively prevented. In addition, the separable design between the insulating support portion 200 and the substrate stage body 100 allows the insulating support portion 200 to be lifted by the second lifting portion 400 when it is replaced, and then removed by the conveying mechanism for replacement. The entire process can be carried out in a vacuum environment, realizing the replacement of the insulating support portion 200 in continuous production, which is efficient and convenient and helps to improve production efficiency.

[0071] In some embodiments of this application, the seed layer deposition equipment for the TGV substrate further includes a magnetron sputtering assembly. The magnetron sputtering assembly is disposed in a vacuum chamber and located above the insulating support 200. It is used to deposit a metal seed layer on the TGV substrate 10. The magnetron sputtering assembly includes components such as a magnetron, a magnetron mounting component, a target material, and a power supply. The structure and principle of each component of the magnetron sputtering assembly, as well as the magnetron sputtering principle, are all prior art known to those skilled in the art and will not be explained in detail here.

[0072] This application also proposes a seed layer deposition method for a TGV substrate, applied to the aforementioned seed layer deposition apparatus for the TGV substrate, which includes at least the following steps: Deposit a predetermined number of TGV substrates 10; After depositing a set number of TGV substrates 10, the insulating support 200 is lifted until it separates from the substrate stage body 100, and then the insulating support 200 is moved out of the vacuum chamber. The new insulating support 200 is transferred to the substrate stage body 100.

[0073] The seed layer deposition method for the TGV substrate in this embodiment replaces the insulating support 200 after depositing a set number of TGV substrates 10. This effectively prevents the deposition of too much metal seed layer on the insulating support 200, which could lead to film detachment and arcing risks. Furthermore, the insulating support 200 can be easily removed and replaced simply by lifting it to separate it from the substrate stage body 100, making it highly efficient and convenient.

[0074] It should be noted that during the deposition of the metal seed layer, some metal seed layer material will pass through the TGV vias of the TGV substrate 10 and be deposited on the surface of the insulating support portion 200. Therefore, the insulating support portion 200 needs to be replaced periodically. In addition, the specific value of the above-mentioned set quantity depends on the actual process and is not specifically limited in this embodiment.

[0075] The following describes a seed layer deposition method for a TGV substrate based on the seed layer deposition apparatus of the above embodiments, comprising the following steps: S1. Place the insulating support 200: The second drive unit drives the second lifting unit 400 to move upward, so that the upper end of the second lifting rod 401 is higher than the upper surface of the substrate stage body 100. Then the transfer mechanism transfers the insulating support 200 to multiple second lifting rods 401. After that, the second lifting unit 400 moves downward to reset, so that the insulating support 200 falls on the upper surface of the substrate stage body 100. S2, Depositing a predetermined number of TGV substrates 10, specifically including: S2.1 The first driving unit drives the first lifting unit 300 to move upward, so that the first lifting rod 301 passes through the first clearance hole 201 of the insulating support unit 200. Then the transfer mechanism transfers the TGV substrate 10 onto the multiple first lifting rods 301. After that, the first lifting unit 300 moves downward to reset, so that the TGV substrate 10 falls onto the insulating support unit 200. Then, the magnetron sputtering assembly deposits a metal seed layer on the first surface of the TGV substrate 10 and the TGV via. S2.2, the first driving unit drives the first lifting unit 300 to move upward, lifting the TGV substrate 10 until it separates from the insulating support unit 200. The conveying mechanism removes the TGV substrate 10, flips the TGV substrate 10, and then transfers the flipped TGV substrate 10 to multiple first lifting rods 301 (e.g., ...). Figure 4 (As shown), then the first lifting part 300 moves downward to reset, so that the TGV substrate 10 falls onto the insulating support part 200 (as shown). Figure 3 (as shown), then the second surface of the TGV substrate 10 and the TGV via are deposited by the magnetron sputtering assembly. After the deposition is completed, the first lifting part 300 lifts the TGV substrate 10 and the conveying mechanism takes away the TGV substrate 10. S2.3 Repeat steps S2.1 and S2.2 a set number of times to deposit a set number of TGV substrates 10; S3. Replace the new insulating support 200: After the set number of TGV substrates 10 are deposited, the second drive unit drives the second lifting unit 400 to move upward, so that the multiple second lifting rods 401 lift the insulating support 200 to separate it from the substrate stage body 100. Then the transfer mechanism takes away the insulating support 200 and moves it out of the vacuum chamber. After that, the transfer mechanism transfers the new insulating support 200 to the multiple second lifting rods 401, and then moves the second lifting unit 400 downward to reset, so that the new insulating support 200 falls on the upper surface of the substrate stage body 100.

[0076] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. In addition, those skilled in the art can combine different embodiments or examples described in this specification.

[0077] The embodiments of this application have been described in detail above with reference to the accompanying drawings. However, this application is not limited to the above embodiments. Within the scope of knowledge possessed by those skilled in the art, various changes can be made without departing from the spirit of this application.

Claims

1. A substrate stage structure, characterized in that, include: Substrate table body; An insulating support portion is disposed on the upper surface of the substrate stage body, and the insulating support portion is configured to fit and support the TGV substrate. A first lifting section is configured to pass upward through the insulating support section to lift the TGV substrate; The second lifting section is configured to lift the insulating support section upwards until it separates from the substrate stage body.

2. The substrate stage structure according to claim 1, characterized in that, The first lifting part is vertically provided with a plurality of first lifting rods, and the insulating support part is vertically provided with a first clearance hole for the first lifting rods to pass through; Specifically, when the first lifting part moves upward, the plurality of first lifting rods lift the TGV substrate to move upward and horizontally.

3. The substrate stage structure according to claim 2, characterized in that, The plurality of first lifting rods are evenly distributed around the center of the substrate stage body.

4. The substrate stage structure according to claim 1, characterized in that, The second lifting section is vertically equipped with multiple second lifting rods; When the second lifting part moves upward, the plurality of second lifting rods lift the insulating support part to move upward and horizontally.

5. The substrate stage structure according to claim 4, characterized in that, The plurality of second lifting rods are evenly distributed around the center of the substrate stage body.

6. The substrate stage structure according to claim 1, characterized in that, The insulating support portion is provided with an inorganic material layer to adhere to and support the TGV substrate.

7. The substrate stage structure according to claim 6, characterized in that, The inorganic material layer is made of one or more materials selected from glass, quartz, and ceramics.

8. The substrate stage structure according to claim 1, characterized in that, The thickness of the insulating support is 0.4mm-1.1mm.

9. A seed layer deposition apparatus for a TGV substrate, characterized in that, include: Vacuum cavity; The substrate stage structure according to any one of claims 1 to 8, wherein the substrate stage structure is disposed within the vacuum cavity; The conveying mechanism is configured to: enter the vacuum chamber to pick up and place the TGV substrate, and enter the vacuum chamber to pick up and place the insulating support portion.

10. A method for seed layer deposition of a TGV substrate, applied to the seed layer deposition apparatus for the TGV substrate as described in claim 9, characterized in that, Includes the following steps: Deposit a predetermined number of TGV substrates; Lift the insulating support portion until it separates from the substrate stage body, and then move the insulating support portion out of the vacuum cavity; The new insulating support is transferred to the substrate stage body.

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