Light Emitting Diodes and Light Emitting Devices

Abstract

This invention relates to the field of semiconductor manufacturing technology, and particularly to a light-emitting diode (LED), comprising a semiconductor stack, a first insulating layer, a transparent conductive layer, a first insertion layer, a first electrode, a second electrode, and a protective layer. The semiconductor stack includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked sequentially. The first insulating layer covers a portion of the second semiconductor layer, the transparent conductive layer covers the first insulating layer and is electrically connected to the second semiconductor layer, the first insertion layer covers a portion of the transparent conductive layer, the first electrode is electrically connected to the first semiconductor layer, the second electrode is disposed on the first insertion layer and is electrically connected to the second semiconductor layer, and the protective layer is disposed on the semiconductor stack, the first electrode, and the second electrode. The opening size of the first insertion layer is less than or equal to the opening size of the transparent conductive layer. This avoids the risk of electrode detachment and achieves synergistic optimization of brightness and reliability.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a light-emitting diode and a light-emitting device. Background Technology

[0002] A light-emitting diode (LED) is a semiconductor light-emitting element, typically made of semiconductors such as GaN, GaAs, GaP, and GaAsP. Its core is a PN junction with light-emitting properties. LEDs possess advantages such as high luminous intensity, high efficiency, small size, and long lifespan, and are considered one of the most promising light sources currently available. LEDs are widely used in lighting, monitoring and command systems, high-definition broadcasting, high-end cinemas, office displays, interactive conferencing, and virtual reality. Currently, in traditional LEDs, the electrodes are in direct contact with the transparent conductive layer. Due to poor adhesion between the electrodes and the transparent conductive layer, interface delamination easily occurs during wire bonding, leading to electrode detachment. Therefore, solving this technical challenge is a pressing issue for those skilled in the art.

[0003] It should be noted that the information disclosed in this background section is intended only to enhance the understanding of the overall background of the present invention, and should not be construed as an admission or in any way implying that the information constitutes prior art known to those skilled in the art. Summary of the Invention

[0004] The present invention provides a light-emitting diode, which includes a semiconductor stack, a first insulating layer, a transparent conductive layer, a first insertion layer, a first electrode, a second electrode, and a protective layer.

[0005] The semiconductor stack includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked sequentially; a first insulating layer is disposed on the second semiconductor layer; a transparent conductive layer is disposed on the first insulating layer and electrically connected to the second semiconductor layer; a first insertion layer is disposed on the transparent conductive layer; a first electrode is electrically connected to the first semiconductor layer; a second electrode is disposed on the first insertion layer and electrically connected to the second semiconductor layer; a protective layer is disposed on the semiconductor stack, the first electrode, and the second electrode; wherein the transparent conductive layer and the first insertion layer each have an opening below the second electrode, and the opening size of the first insertion layer is less than or equal to the opening size of the transparent conductive layer.

[0006] The present invention also provides another light-emitting diode, which includes a semiconductor stack, a first insulating layer, a transparent conductive layer, a first insertion layer, a first electrode, a second electrode, and a protective layer.

[0007] The semiconductor stack includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked sequentially; a first insulating layer is disposed on the second semiconductor layer; a transparent conductive layer is disposed on the first insulating layer and electrically connected to the second semiconductor layer; a first insertion layer is disposed on the transparent conductive layer; a first electrode is electrically connected to the first semiconductor layer; a second electrode is disposed on the first insertion layer and electrically connected to the second semiconductor layer; a protective layer is disposed on the semiconductor stack, the first electrode, and the second electrode; wherein the first insertion layer is located between the transparent conductive layer and the second electrode, and the first insertion layer at least partially isolates the transparent conductive layer and the second electrode.

[0008] The present invention also provides a light-emitting device, which includes a light-emitting diode, wherein the light-emitting diode is any of the light-emitting diodes provided above.

[0009] An embodiment of the present invention provides a light-emitting diode and a light-emitting device. By adding a first insertion layer, on the one hand, the contact interface structure of the electrode can be improved, avoiding the risk of electrode detachment during wire bonding; on the other hand, by combining it with a protective layer, the thickness of the first insertion layer and the thickness of the protective layer can be independently adjusted, thereby achieving synergistic optimization of brightness and reliability.

[0010] Other features and advantages of the present invention will be set forth in the following description, and some of the technical features and advantages may be apparent from the description or learned by practicing the invention. Attached Figure Description

[0011] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, some of the drawings in the following description are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0012] Figure 1A This is a top view schematic diagram of the light-emitting diode provided in the first embodiment of the present invention; Figure 1B yes Figure 1A A magnified view of a portion of the image; Figure 1C This is a partially enlarged structural diagram showing that the size of the third opening is smaller than the size of the fourth opening. Figure 2A yes Figure 1A A schematic diagram of the cross-sectional structure taken along the FF intercept line; Figure 2B It corresponds Figure 1C A schematic cross-sectional view of a light-emitting diode provided in another embodiment of the present invention; Figure 3This is a top view schematic diagram of the light-emitting diode provided in the second embodiment of the present invention; Figures 4 to 9 This is a schematic diagram of the structure of the light-emitting diode at each stage of the fabrication process provided in the first embodiment of the present invention; Figure 10 This is a top view of the light-emitting diode provided in the third embodiment of the present invention; Figure 11 This is a top view schematic diagram of the light-emitting diode provided in the fourth embodiment of the present invention; Figure 12 This is a top view of the light-emitting diode provided in the fifth embodiment of the present invention; Figure 13 This is a top view of the light-emitting diode provided in the sixth embodiment of the present invention; Figure 14 This is a cross-sectional structural schematic diagram of the light-emitting diode provided in the seventh embodiment of the present invention; Figure 15 It corresponds Figure 14 A partially enlarged structural diagram showing that the third opening is larger than the fifth opening.

[0013] Figure label: 10-Substrate; 12-Semiconductor stack; 121-First semiconductor layer; 122-Light-emitting layer; 123-Second semiconductor layer; 14-First insulating layer; 16-Transparent conductive layer; 18-First insertion layer; 181-Third opening; 182-Fourth opening; 183-Fifth opening; 20-First electrode; 201-First starting electrode; 202-First extension electrode; 22-Second electrode; 221-Second starting electrode; 222-Second extension electrode Electrode; 24-protective layer; 241-first opening; 242-second opening; 26-second insulating layer; 28-second insertion layer; 30-side; 40-chamfered portion; 50-chamfered edge; 54-outer edge of the first insulating layer; 61, 62-inner wall; W1-first width; W2-second width; W3-third width; W4-fourth width; W5-fifth width; W6-sixth width; L1, L2-space; S1, S2-opening size. Detailed Implementation

[0014] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. The technical features designed in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0015] In the description of this invention, it should be understood that the terms "center," "lateral," "upper," "lower," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more. Additionally, the term "comprising" and any variations thereof mean "at least comprising." The technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of this invention through various specific implementations.

[0016] Please see Figure 1A , Figure 1B and Figure 2A , Figure 1A This is a top view schematic diagram of the light-emitting diode provided in the first embodiment of the present invention. Figure 1B yes Figure 1A A partially enlarged schematic diagram, Figure 2A yes Figure 1A A schematic diagram of the cross-sectional structure taken along the FF intercept line. Figure 1B The image is primarily used to illustrate comparisons between edges and contours, as well as widths. To achieve at least one or more of the aforementioned advantages, a first embodiment of the present invention provides a light-emitting diode (LED). As shown in the figure, the LED includes a semiconductor stack 12, a first insulating layer 14, a transparent conductive layer 16, a first insertion layer 18, a first electrode 20, a second electrode 22, and a protective layer 24.

[0017] A semiconductor stack 12 is disposed on a substrate 10. The substrate 10 may be an insulating substrate 10, preferably made of a transparent or translucent material. In the illustrated embodiment, the substrate 10 is a sapphire substrate 10. In some embodiments, the substrate 10 may be a patterned sapphire substrate 10, but the invention is not limited thereto. The substrate 10 may also be made of a conductive or semiconductor material. For example, the substrate 10 material may include at least one of silicon carbide, silicon, magnesium aluminum oxide, magnesium oxide, lithium aluminum oxide, aluminum gallium oxide, and gallium nitride.

[0018] The semiconductor stack 12 includes a first semiconductor layer 121, a light-emitting layer 122, and a second semiconductor layer 123 sequentially stacked on the substrate 10. That is, the light-emitting layer 122 is located between the first semiconductor layer 121 and the second semiconductor layer 123.

[0019] The first semiconductor layer 121 may be an N-type semiconductor layer, which can provide electrons to the light-emitting layer 122 under the influence of a power source. In some embodiments, the first semiconductor layer 121 includes an N-type doped nitride layer. The N-type doped nitride layer may include N-type impurities. N-type impurities may include one or a combination of Si, Ge, and Sn.

[0020] The light-emitting layer 122 can be a quantum well (QW) structure. In some embodiments, the light-emitting layer 122 can also be a multiple quantum well (MQW) structure, wherein the multiple quantum well structure includes multiple quantum well layers (Wells) and multiple quantum barrier layers (Barriers) arranged alternately in a repeating manner, such as a GaN / AlGaN, InAlGaN / InAlGaN, or InGaN / AlGaN multi-quantum well structure. Furthermore, the composition and thickness of the well layers within the light-emitting layer 122 determine the wavelength of the generated light. To improve the luminous efficiency of the light-emitting layer 122, this can be achieved by changing the depth of the quantum wells, the number of paired quantum wells and quantum barriers, the thickness, and / or other characteristics within the light-emitting layer 122.

[0021] The second semiconductor layer 123 can be a P-type semiconductor layer, which can provide holes to the light-emitting layer 122 under power. In some embodiments, the second semiconductor layer 123 includes a P-type doped nitride layer. The P-type doped nitride layer may include one or more P-type impurities. The P-type impurities may include one or a combination of Mg, Zn, and Be. The second semiconductor layer 123 can be a single-layer structure or a multi-layer structure with different compositions.

[0022] A first insulating layer 14 is disposed above and partially covers the second semiconductor layer 123. The first insulating layer 14 can be used to block the vertical injection of current into the second semiconductor layer 123, promoting its lateral diffusion to achieve a more uniform current distribution; however, this disclosure is not limited to this. The material of the first insulating layer 14 includes a non-conductive material, which can be an oxide and a relatively transparent material, such as one or more combinations of silicon oxide, titanium oxide, silicon nitride, aluminum oxide, magnesium fluoride, spin-coated glass (SOG), and polymers; this application is not limited to the examples listed herein. Such combinations can also include, for example, a Bragg mirror (DBR) formed by repeatedly stacking two or more materials with different refractive indices.

[0023] A transparent conductive layer 16 is disposed on the first insulating layer 14 and electrically connected to the second semiconductor layer 123. The transparent conductive layer 16 may cover all or part of the first insulating layer 14. The material of the transparent conductive layer 16 includes a transparent conductive material, which may include indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium-doped zinc oxide (GZO), tungsten-doped indium oxide (IWO), or zinc oxide (ZnO), but the embodiments disclosed herein are not limited thereto.

[0024] The first insertion layer 18 is disposed on top of the transparent conductive layer 16 and covers a portion of the transparent conductive layer 16. The material of the first insertion layer 18 includes an insulating material, such as one or a combination of aluminum oxide, silicon nitride, silicon oxide, titanium oxide, or magnesium fluoride. The first insertion layer 18 may also be a Bragg reflector (DBR) formed by repeatedly stacking two or more materials.

[0025] The first electrode 20 is electrically connected to the first semiconductor layer 121. The first electrode 20 can be a single-layer, double-layer, or multi-layer structure, such as: Ti / Al, Ti / Al / Ti / Au, Ti / Al / Ni / Au, V / Al / Pt / Au, etc.

[0026] The second electrode 22 is disposed on the first insertion layer 18 and electrically connected to the second semiconductor layer 123. The second electrode 22 can be a single-layer, double-layer, or multi-layer structure, such as: Ti / Al, Ti / Al / Ti / Au, Ti / Al / Ni / Au, V / Al / Pt / Au stacked structures, etc.

[0027] Viewed from above the light-emitting diode and looking down at the semiconductor stack 12, i.e. Figure 1B As shown, to clarify the shape and position of the first insertion layer 18, it is depicted with a filled pattern and does not extend beyond the outer edge 54 of the first insulating layer 14. It can be understood that the outer edge 54 of the first insulating layer 14 refers to its outermost boundary line. The refractive index of the first insertion layer 18 is less than that of the transparent conductive layer 16, and the refractive index of the first insulating layer 14 is less than that of the transparent conductive layer 16. By forming a Bragg reflector (low-high-low refractive index structure) below the second electrode 22 through the sequentially distributed first insulating layer 14, transparent conductive layer 16, and first insertion layer 18 from bottom to top, light below the second electrode 22 is reflected back, preventing some of the emitted light from being absorbed by the second electrode 22, thereby improving the light emission performance of the light-emitting diode.

[0028] Specifically, when light is emitted from the light-emitting layer 122, in a conventional structure, some of the light emitted to the area below the second electrode 22 will be absorbed by the second electrode 22, affecting the light emission efficiency. This invention adds a first insertion layer 18, thereby forming a Bragg reflector consisting of a first insulating layer 14, a transparent conductive layer 16, and a first insertion layer 18 below the second electrode 22. This reflects the light emitted to the area below the second electrode 22 back and allows it to be emitted from other locations, enabling more light to penetrate and emit, thereby improving the light emission performance of the light-emitting diode.

[0029] Preferably, the width of the first insertion layer 18 is the same as the width of the second electrode 22. However, due to practical process considerations, ensuring that their widths are the same would be difficult to manufacture and increase process costs. Therefore, the width of the second electrode 22 is controlled to be less than or equal to the width of the first insertion layer 18 and less than or equal to the width of the first insulating layer 14, i.e., the width of the first insertion layer 18 is less than the width of the first insulating layer 14. This is because, in locations other than directly below the second electrode 22, it is generally desirable for light to pass through and be emitted directly. Therefore, the first insertion layer 18 is added only directly below the second electrode 22 to reflect light, thereby reducing the brightness loss caused by the reduced transmittance around the second electrode 22 and improving the overall light emission performance of the LED.

[0030] In some embodiments, optionally, the edge of the first insertion layer 18 located at the outer contour of the second electrode 22 does not extend beyond the outer edge 54 of the first insulating layer 14, so that more light can penetrate and be emitted, thereby improving the light emission performance of the light-emitting diode.

[0031] In some embodiments, the light-emitting diode further includes a protective layer 24, which is formed on the semiconductor stack 12 and covers the first electrode 20 and the second electrode 22. The protective layer 24 has a first opening 241 and a second opening 242, where the first opening 241 is located on the first electrode 20 and the second opening 242 is located on the second electrode 22. The protective layer 24 can be used to prevent leakage of conductive material that could cause electrical connection between the first semiconductor layer 121 and the second semiconductor layer 123, reducing short-circuit abnormalities in the light-emitting diode. It can also effectively block moisture and contaminants in the air from entering the chip, ensuring the reliability of the light-emitting diode. However, the embodiments disclosed herein are not limited thereto. The material of the protective layer 24 includes a non-conductive material. The non-conductive material is preferably an inorganic material or a dielectric material. Inorganic materials include silicone or glass. Dielectric materials include alumina (AlO), silicon nitride (SiNx), silicon oxide (SiOx), titanium oxide (TiOx), or magnesium fluoride (MgFx), which can be electrically insulating materials. For example, the protective layer 24 can be silicon dioxide, silicon nitride, titanium oxide, tantalum oxide, niobium oxide, barium titanate, or a combination thereof. Such combinations can also be, for example, a Bragg reflector (DBR) formed by repeatedly stacking two or more materials. Therefore, the thicknesses of the first insertion layer 18 and the protective layer 24 can be independently controlled, thereby improving the light emission performance of the LED while ensuring the coating effect, ultimately achieving synergistic optimization of brightness and reliability.

[0032] It should be further explained that if the first insertion layer 18 extends beyond the outer edge 54 of the first insulating layer 14, it means that the first insertion layer 18 simultaneously serves as both a Bragg reflector and a protective layer. Since the thickness of the first insertion layer 18 itself is limited to one value, if it functions as a Bragg reflector, the thickness cannot be too large, thus inevitably worsening the coverage for the protective function; conversely, the same applies. In contrast, the film thickness of the first insertion layer 18 and the film thickness of the protective layer 24 in this invention can be adjusted independently, resulting in better brightness and coverage.

[0033] In some embodiments, the thickness of the first insertion layer 18 is (λ / 4n) ± 10%, where λ is the emission wavelength of the light-emitting layer 122 and n is the refractive index of the first insertion layer 18. By controlling the thickness range of the first insertion layer 18, interference enhancement can be achieved on the one hand, and excessive thickness can be avoided from affecting its reflectivity when forming a Bragg reflector on the other hand.

[0034] In some embodiments, the thickness of the protective layer 24 is greater than or equal to [(λ / 4m)×(2k-1)]±10%, where k is a natural number greater than or equal to 1, λ is the emission wavelength of the light-emitting layer 122, and m is the refractive index of the protective layer 24. By controlling the thickness range of the protective layer 24, its anti-reflection effect can be achieved on the one hand, and its coverage can be deteriorated due to excessively small thickness on the other hand.

[0035] In some embodiments, viewed from above, the second electrode 22 includes a second starting electrode 221 and a second extending electrode 222. The second extending electrode 222 is connected to the second starting electrode 221 and extends from the second starting electrode 221 toward the first electrode 20. The width of the first insulating layer 14 located at the second extending electrode 222 is defined as the first width W1, the width of the first insertion layer 18 located at the second extending electrode 222 is defined as the second width W2, and the width of the second extending electrode 222 is defined as the third width W3, where the first width W1 ≥ the second width W2 and the second width W2 ≥ the third width W3. Preferably, the second width W2 and the third width W3 are the same; however, due to practical process considerations, it is difficult to make their widths the same. Therefore, the third width W3 is controlled to be ≤ the second width W2 ≤ the first width W1, i.e., the second width W2 < the first width W1, thereby reducing the brightness loss due to reduced transmittance around the second electrode 22. Furthermore, in one embodiment, the difference between the second width W2 and the third width W3 is no greater than 20 μm, preferably no greater than 10 μm, thereby minimizing the brightness loss due to reduced transmittance around the second electrode 22 while avoiding process difficulties.

[0036] In some embodiments, such as Figure 1A As shown, the first insertion layer 18 located at the second extension electrode 222 is composed of a series of discrete block structures with intervals between them, exposing a portion of the surface of the transparent conductive layer 16 at the second extension electrode 222, and the second electrode 22 is electrically connected to the transparent conductive layer 16 through the intervals.

[0037] In some embodiments, the first insertion layer 18 has a third opening 181 at the second starting electrode 221, that is, the opening of the first insertion layer 18 is located below the second starting electrode 221, and the first insulating layer 14 has a fourth opening 182 at the second starting electrode 221. The second electrode 22 is electrically connected to the second semiconductor layer 123 through the third opening 181 and the fourth opening 182. In this embodiment, the third opening 181 and the fourth opening 182 are annular. In other embodiments, the third opening 181 and the fourth opening 182 may also be circular, square, or other shapes. In other embodiments, the third opening 181 is annular and the fourth opening 182 is circular, or the third opening 181 is circular and the fourth opening 182 is annular, or both the third opening 181 and the fourth opening 182 are circular (e.g., ...). Figure 3 (as shown in the image).

[0038] In some embodiments, viewed from above, such as Figure 1B As shown, the size of the third opening 181 can be larger than the size of the fourth opening 182, and the first insertion layer 18 is entirely located within the first insulating layer 14. In some embodiments, viewed from above, such as Figure 1C As shown, the size of the third opening 181 can be smaller than the size of the fourth opening 182 to increase the Bragg reflector area and further improve the light emission performance of the LED. It should be noted that in this embodiment, the first insertion layer 18 still does not extend beyond the outer edge 54 of the first insulating layer 14. In some embodiments, the transparent conductive layer 16 and the first insertion layer 18 each have an opening below the second electrode 22. The opening size S1 of the first insertion layer 18 is less than or equal to the opening size S2 of the transparent conductive layer 16, thereby solving the problem of interface delamination during wire bonding caused by poor adhesion between the second electrode 22 and the transparent conductive layer 16, and improving the reliability of the LED. Furthermore, the combination of the first insertion layer 18 and the protective layer 24 allows for independent adjustment of the thickness of the first insertion layer 18 and the protective layer 24, thereby achieving synergistic optimization of brightness and reliability. Figure 1B and Figure 2A For example, the transparent conductive layer 16 has a fifth opening 183 located at the second starting electrode 221, meaning the opening of the transparent conductive layer 16 is below the second starting electrode 221, and the fifth opening 183 can be circular. The size S1 of the third opening 181 is smaller than the size S2 of the fifth opening 183; that is, the opening size S1 of the first insertion layer 18 is smaller than the opening size S2 of the transparent conductive layer 16. It should be noted that when the third opening 181 is annular, its opening size S1 can refer to the diameter of the outermost circle. Figure 2AAs shown, the inner wall 61 of the opening of the first insertion layer 18 completely covers the inner wall 62 of the opening of the transparent conductive layer 16. By setting the first insertion layer 18 between the transparent conductive layer 16 and the first electrode 20, the problem of interface delamination during wire bonding caused by poor adhesion between the second starting electrode 221 and the transparent conductive layer 16 can be solved, thus improving the reliability of the light-emitting diode. Since most of the contact surface between the second electrode 22 and the transparent conductive layer 16 is located on the top surface of the transparent conductive layer 16 (that is, the front light-emitting surface of the light-emitting diode) and the transparent conductive layer 16 is usually extremely thin, in some embodiments, the size S1 of the third opening 181 can also be equal to the size S2 of the fifth opening 183. That is, the opening size S1 of the first insertion layer 18 is equal to the opening size S2 of the transparent conductive layer 16.

[0039] Furthermore, in some embodiments, please refer to Figure 2B , Figure 2B It corresponds Figure 1C The provided schematic diagram of the cross-sectional structure of the light-emitting diode shows that the first insertion layer 18 can be further extended downward to cover the sidewall of the first insulating layer 14, so as to further avoid the risk of the electrode falling off during wire bonding.

[0040] In some embodiments, such as Figure 2A As shown, by placing the first insertion layer 18 between the transparent conductive layer 16 and the second electrode 22, and by having the first insertion layer 18 at least partially isolate the transparent conductive layer 16 and the second electrode 22, the problem of interface delamination during wire bonding caused by poor adhesion between the second electrode 22 and the transparent conductive layer 16 can be solved, thereby improving the reliability of the light-emitting diode.

[0041] In some embodiments, viewed from above the light-emitting diode towards the semiconductor stack 12, the semiconductor stack 12 has a shortest side 30 and at least one chamfered edge 50. The shortest side 30 is connected to the chamfered edge 50. The transparent conductive layer 16 has at least one chamfered portion 40, the radius of curvature of which is greater than that of the chamfered edge 50. The dimension of the shortest side 30 is defined as x micrometers, and the radius of curvature of the chamfered portion 40 ranges from 15 to x / 2 micrometers. Preferably, the radius of curvature of the chamfered portion 40 ranges from 30 to 200 micrometers, and the radius of curvature of the chamfered edge 50 ranges from 5 to 15 micrometers. While the transparent conductive layer 16 enhances the lateral current diffusion capability, it also has a certain light-shielding effect, especially in the portion far from the electrode. The negative light emission effect caused by this light-shielding outweighs the beneficial light emission effect from the lateral current diffusion capability. Therefore, by enlarging the chamfered portion 40 of the transparent conductive layer 16 and reducing unnecessary coverage by the transparent conductive layer 16, the beneficial light emission effect from the lateral current diffusion capability of the transparent conductive layer 16 can be made greater than the negative light emission effect from the light-shielding effect, thereby improving the external quantum efficiency of the light-emitting diode and further enhancing its light emission performance. Figure 1A As shown, viewed from above the light-emitting diode towards the semiconductor stack 12, the semiconductor stack 12 has four chamfered edges 50, and the transparent conductive layer 16 has four chamfered portions 40, each corresponding to one of the four chamfered edges 50. The radius of curvature of each of the four chamfered edges 50 is smaller than the radius of curvature of each of the four chamfered portions 40. The radius of curvature of each of the four chamfered portions 40 ranges from 15 to 2 micrometers.

[0042] In some embodiments, the light-emitting diode further includes a second insertion layer 28, which is disposed above and partially covers the first semiconductor layer 121, and the first electrode 20 is disposed above the second insertion layer 28. The material of the second insertion layer 28 includes an insulating material, such as one or a combination of aluminum oxide, silicon nitride, silicon oxide, titanium oxide, or magnesium fluoride. The second insertion layer 28 may also be a Bragg reflector (DBR) formed by repeated stacking of two or more materials. By designing the second insertion layer 28, it can, on the one hand, act as a current blocking layer to prevent current from being vertically injected into the first semiconductor layer 121, promoting its lateral diffusion to achieve a more uniform current distribution; on the other hand, it can form a good ODR reflective layer with the upper first electrode 20, improving reflection efficiency and further enhancing the photoelectric effect of the light-emitting diode.

[0043] In some embodiments, viewed from above, the first electrode 20 includes a first starting electrode 201 and a first extending electrode 202. The first extending electrode 202 is connected to the first starting electrode 201 and extends from the first starting electrode 201 toward the second electrode 22. The width of the second insertion layer 28 located at the first extending electrode 202 is a fifth width W5, and the width of the first extending electrode 202 is a sixth width W6, where the fifth width W5 ≥ the sixth width W6. This increases the overall area of ​​the ODR reflective layer, further improving the reflection efficiency.

[0044] Please see Figures 4 to 9 , Figures 4 to 9 This is a schematic diagram of the structure of the light-emitting diode at each stage of the manufacturing process provided in the first embodiment of the present invention.

[0045] First, such as Figure 4 As shown, a semiconductor stack 12 is formed on the substrate 10. The semiconductor stack 12 includes a first semiconductor layer 121, a light-emitting layer 122, and a second semiconductor layer 123 sequentially stacked on the substrate 10. Mesa surfaces are formed by etching the second semiconductor layer 123 and the light-emitting layer 122, exposing the first semiconductor layer 121.

[0046] Secondly, such as Figure 5 As shown, a first insulating layer 14 is formed to cover a portion of the second semiconductor layer 123. Figure 5The diagram illustrates the structural distribution of the first insulating layer 14. The outer edge 54 of the first insulating layer 14 can be referenced... Figure 5 The location of the identifier is shown in the figure.

[0047] Then, as Figure 6 As shown, a transparent conductive layer 16 is provided to cover the first insulating layer 14, and the transparent conductive layer 16 is electrically connected to the second semiconductor layer 123. Figure 6 The diagram shows the structural distribution of the transparent conductive layer 16.

[0048] Next, as Figure 7 As shown, a first insertion layer 18 is provided to cover a portion of the transparent conductive layer 16. A second insertion layer 28 is provided on the first semiconductor layer 121. Figure 7 The diagram illustrates the structural distribution of the first insertion layer 18 and the second insertion layer 28.

[0049] Then, as Figure 8 As shown, the second electrode 22 is disposed on the first insertion layer 18, and the second electrode 22 is electrically connected to the second semiconductor layer 123. The first electrode 20 is disposed on the second insertion layer 28. Figure 8 The diagram illustrates the structural distribution of the first electrode 20 and the second electrode 22.

[0050] Finally, as Figure 9 As shown, a protective layer 24 is provided to cover the first electrode 20 and the second electrode 22. The protective layer 24 has a first opening 241 and a second opening 242, the first opening 241 being located on the first electrode 20 and the second opening 242 being located on the second electrode 22. Figure 9 The diagram shows the structural distribution of the protective layer 24.

[0051] Please see Figure 10 , Figure 10This is a top view schematic diagram of the light-emitting diode (LED) provided in the third embodiment of the present invention. Compared to LEDs in other embodiments, the main difference in this embodiment is that the LED further includes a second insulating layer 26, i.e., a second insertion layer 28 is disposed on the second insulating layer 26, the second insulating layer 26 is disposed on the first semiconductor layer 121, and the first electrode 20 is disposed on the second insertion layer 28. The material of the second insulating layer 26 includes a non-conductive material, which can be an oxide, and can also be a relatively transparent material, such as one or more combinations of silicon oxide, titanium oxide, silicon nitride, aluminum oxide, magnesium fluoride, spin-coated glass (SOG), polymer, etc. This application is not limited to the examples listed herein; the combination could also be a Bragg reflector (DBR) formed by repeatedly stacking two or more materials with different refractive indices. The second insulating layer 26 acts as a current blocking layer to prevent current from vertically injecting into the first semiconductor layer 121, improving the uniformity of current distribution. The second insulating layer 26, the second insertion layer 28, and the first electrode 20 above form a good ODR reflective layer, improving reflection efficiency and further enhancing the photoelectric effect of the LED.

[0052] In some embodiments, viewed from above the light-emitting diode and towards the semiconductor stack 12, the outer edge of the second insulating layer 26 does not extend beyond the outer edge of the second insertion layer 28. Since the second insertion layer 28 does not act as a current barrier, its thickness can be appropriately reduced, thereby reducing over-etching area loss and increasing the overall area of ​​the second insulating layer 26 and the second insertion layer 28 directly below the first electrode 21, further improving reflection efficiency. In some embodiments, viewed from above, the width of the second insulating layer 26 located at the first extended electrode 202 is defined as a fourth width W4, a fifth width W5 ≥ the fourth width W4, and a fourth width W4 ≥ the sixth width W6. This increases the overall area of ​​the ODR reflective layer, further improving reflection efficiency.

[0053] Please see Figure 11 , Figure 11 This is a top view schematic diagram of the light-emitting diode provided in the fourth embodiment of the present invention. Compared with the light-emitting diodes of other embodiments, the main difference of this embodiment is that the fourth width W4 and the fifth width W5 are the same. When the width of the second insertion layer 28 is equal to the width of the second insulating layer 26, even without the use of high-precision equipment, the overlay window can still be ensured (to ensure that the alignment accuracy between the front and rear process layers meets the product design requirements), thereby reducing costs.

[0054] Please see Figure 12 , Figure 12This is a top view schematic diagram of the light-emitting diode provided in the fifth embodiment of the present invention. Compared with the light-emitting diodes of other embodiments, the main difference of this embodiment is that the first width W1 and the second width W2 are the same. When the width of the first insertion layer 18 is equal to the width of the first insulating layer 14, the manufacturing process difficulty and cost can also be reduced.

[0055] Please see Figure 13 , Figure 13 This is a top view schematic diagram of the light-emitting diode provided in the sixth embodiment of the present invention. Compared to light-emitting diodes in other embodiments, the main difference in this embodiment is that the first insertion layer 18 located at the second extension electrode 222 is composed of a series of discrete block structures with intervals between them. The size of one interval L1 can be different from the size of another interval L2. This interval gradually decreases along the extension direction of the second extension electrode 222. As shown in the figure, the size of the interval L1 closer to the second starting electrode 221 is larger than the size of the interval L2 farther from the second starting electrode 221, thereby achieving a voltage reduction effect, i.e., preventing current accumulation at the end of the extension electrode, improving current uniformity, and reducing voltage. However, this invention is not limited to this; the interval can also gradually increase along the extension direction of the second extension electrode 222, thereby increasing brightness. Since the width of the second extension electrode 222 generally gradually narrows, with the largest width at the position extending from the second starting electrode 221, increasing the overlap area between this position and the second extension electrode 222 can increase the reflective area and improve brightness.

[0056] Please see Figure 14 and Figure 15 , Figure 14 This is a cross-sectional structural diagram of the light-emitting diode provided in the seventh embodiment of the present invention. Figure 15 It corresponds Figure 14 A schematic diagram showing the structure where the opening size S1 of the first insertion layer 18 is larger than the opening size S2 of the transparent conductive layer 16. Compared to other embodiments of the light-emitting diode, the main difference in this embodiment is that the opening size S1 of the first insertion layer 18 is larger than the opening size S2 of the transparent conductive layer 16. In some embodiments, the distance between the opening of the first insertion layer 18 and the opening of the transparent conductive layer 16 is no greater than 5 μm, such as half the difference between S1 and S2 being no greater than 5 μm, or the distance between the inner wall 61 of the opening of the first insertion layer 18 and the inner wall 62 of the opening of the transparent conductive layer 16 being no greater than 5 μm. This controls the contact area ratio between the second electrode 22 and the first insertion layer 18 and the transparent conductive layer 16, specifically by reducing the contact area between the second electrode 22 and the transparent conductive layer 16 while ensuring sufficient contact area between the second electrode 22 and the first insertion layer 18. Furthermore, in some embodiments, the opening size S1 of the first insertion layer 18 can also be equal to the opening size S2 of the transparent conductive layer 16.

[0057] An embodiment of the present invention also provides a light-emitting device, which may employ a light-emitting diode from any of the foregoing embodiments.

[0058] In summary, the light-emitting diode and light-emitting device provided by one embodiment of the present invention, by adding a first insertion layer 18, can improve the contact interface structure of the electrode (i.e., avoid the second electrode 22 directly contacting the transparent conductive layer 16), and avoid the risk of electrode detachment during wire bonding; on the other hand, by combining it with the protective layer 24, the thickness of the first insertion layer 18 and the thickness of the protective layer 24 can be independently adjusted, thereby achieving synergistic optimization of brightness and reliability.

[0059] Furthermore, those skilled in the art should understand that although many problems exist in the prior art, each embodiment or technical solution of the present invention can be improved in only one or a few aspects, without necessarily solving all the technical problems listed in the prior art or the background art simultaneously. Those skilled in the art should understand that any content not mentioned in a claim should not be construed as a limitation on that claim.

[0060] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light emitting diode, characterized by: The light-emitting diode includes: A semiconductor stack, the semiconductor stack comprising a first semiconductor layer, a light-emitting layer and a second semiconductor layer stacked sequentially; A first insulating layer is disposed on the second semiconductor layer; A transparent conductive layer is disposed on the first insulating layer and electrically connected to the second semiconductor layer; A first insertion layer is disposed on the transparent conductive layer; A first electrode, the first electrode being electrically connected to the first semiconductor layer; The second electrode is disposed on the first insertion layer and electrically connected to the second semiconductor layer; A protective layer is disposed on the semiconductor stack, the first electrode, and the second electrode; The transparent conductive layer and the first insertion layer each have an opening below the second electrode, and the opening size of the first insertion layer is less than or equal to the opening size of the transparent conductive layer.

2. The light emitting diode of claim 1, wherein: Viewed from above the light-emitting diode and towards the semiconductor stack, the first insertion layer does not extend beyond the outer edge of the first insulating layer.

3. The light emitting diode of claim 1, wherein: Viewed from above the light-emitting diode and looking down at the semiconductor stack, the first insertion layer is entirely located within the first insulating layer.

4. The light-emitting diode according to claim 1, characterized in that: The thickness of the first insertion layer is (λ / 4n)±10%, where λ is the emission wavelength of the light-emitting layer and n is the refractive index of the first insertion layer.

5. The light-emitting diode according to claim 1, characterized in that: The thickness of the protective layer is greater than or equal to [(λ / 4m)×(2k-1)]±10%, where k is a natural number greater than or equal to 1, λ is the emission wavelength of the light-emitting layer, and m is the refractive index of the protective layer.

6. The light-emitting diode according to claim 1, characterized in that: Viewed from above the light-emitting diode toward the semiconductor stack, the second electrode includes a second starting electrode and a second extending electrode. The second extending electrode is connected to the second starting electrode and extends from the second starting electrode toward the first electrode. The opening of the first insertion layer is located below the second starting electrode, and the opening of the transparent conductive layer is located below the second starting electrode.

7. The light-emitting diode according to claim 6, characterized in that: The first insertion layer located at the second extension electrode is composed of a series of discrete block structures with intervals, exposing a portion of the surface of the transparent conductive layer at the second extension electrode, and the second electrode is electrically connected to the transparent conductive layer through the intervals.

8. The light-emitting diode according to claim 1, characterized in that: The inner wall of the opening of the first insertion layer completely covers the inner wall of the opening of the transparent conductive layer.

9. A light-emitting diode, characterized in that: The light-emitting diode includes: A semiconductor stack, the semiconductor stack comprising a first semiconductor layer, a light-emitting layer and a second semiconductor layer stacked sequentially; A first insulating layer is disposed on the second semiconductor layer; A transparent conductive layer is disposed on the first insulating layer and electrically connected to the second semiconductor layer; A first insertion layer is disposed on the transparent conductive layer; A first electrode, the first electrode being electrically connected to the first semiconductor layer; The second electrode is disposed on the first insertion layer and electrically connected to the second semiconductor layer; A protective layer is disposed on the semiconductor stack, the first electrode, and the second electrode; The first insertion layer is located between the transparent conductive layer and the second electrode, and the first insertion layer at least partially isolates the transparent conductive layer and the second electrode. The second electrode includes a second starting electrode and a second extending electrode. The second extending electrode is connected to the second starting electrode. The transparent conductive layer and the first insertion layer each have an opening below the second starting electrode. The opening size of the first insertion layer is greater than or equal to the opening size of the transparent conductive layer.

10. The light-emitting diode according to claim 9, characterized in that: Viewed from above the light-emitting diode toward the semiconductor stack, the second extended electrode extends from the second starting electrode toward the first electrode.

11. The light-emitting diode according to claim 10, characterized in that: The distance between the opening of the first insertion layer and the opening of the transparent conductive layer is no greater than 5 μm.

12. The light-emitting diode according to claim 9, characterized in that: The first insertion layer does not extend beyond the outer edge of the first insulating layer.

13. The light-emitting diode according to claim 9, characterized in that: The first insertion layer is entirely located within the first insulating layer.

14. The light-emitting diode according to claim 9, characterized in that: The thickness of the first insertion layer is (λ / 4n)±10%, where λ is the emission wavelength of the light-emitting layer and n is the refractive index of the first insertion layer.

15. The light-emitting diode according to claim 9, characterized in that: The thickness of the protective layer is greater than or equal to [(λ / 4m)×(2k-1)]±10%, where k is a natural number greater than or equal to 1, λ is the emission wavelength of the light-emitting layer, and m is the refractive index of the protective layer.

16. The light-emitting diode according to claim 1 or 9, characterized in that: The refractive index of the first insertion layer is less than that of the transparent conductive layer, and the refractive index of the first insulating layer is less than that of the transparent conductive layer.

17. A light-emitting device, characterized in that: The light-emitting device includes a light-emitting diode, and the light-emitting diode is the light-emitting diode as described in any one of claims 1 to 16.

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