Method for cleaning dirt on surface of semiconductor device on blue film

Abstract

The invention provides a method for cleaning dirt on the surface of a semiconductor device on a blue film, and relates to the technical field of semiconductor device cleaning. S2, brushing the semiconductor device after dipping the cleaning liquid medicine by using a brush; s3, washing the residual liquid medicine on the surface of the semiconductor device by using pure water; s4, blow-drying the semiconductor device by using a nitrogen gun; s5, after the step S4 is completed, the semiconductor device is continuously cleaned when dirt exists, and if the appearance of the semiconductor device is clean, cleaning is completed. The problem of smudginess of the surface of the chip can be solved, and qualitative change of the blue film cannot be caused. The cleaning efficiency is high, and the device surface is basically not damaged.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor device cleaning, in particular to a method for cleaning dirt on the surface of a semiconductor device on a blue film. BACKGROUND

[0002] During production, semiconductor devices are prone to dirt, which affects the appearance and performance of the devices. Before cutting, wafers can be easily cleaned with inorganic or organic chemicals. Plasma or other gas reactive ion cleaning methods can also be used. After cutting, the devices are transferred to a blue film. Because the blue film is easily corroded by chemicals, it cannot be directly cleaned with inorganic chemicals or highly corrosive organic chemicals such as acetone and ammonia.

[0003] In this industry, dirty and colored devices are often rejected, which results in a large amount of good product waste and increases production costs. Alternatively, glue can be used to remove surface dirt and debris, which is inefficient and can cause secondary scratches, seriously affecting the yield and performance of semiconductor devices. SUMMARY

[0004] The present application provides a method for cleaning dirt on the surface of a semiconductor device on a blue film to solve the technical problems raised in the background.

[0005] To solve the above technical problems, the present application discloses a method for cleaning dirt on the surface of a semiconductor device on a blue film, comprising: Step S1: configuring cleaning chemicals; Step S2: brushing the semiconductor device with a brush dipped in the cleaning chemicals; Step S3: rinsing the semiconductor device surface with residual chemicals with pure water; Step S4: drying the semiconductor device with a nitrogen gun; Step S5: if the semiconductor device has dirt, continue cleaning; if the semiconductor device is clean, stop cleaning.

[0006] Preferably, the cleaning chemicals are composed of isopropyl alcohol and pure water.

[0007] Preferably, in step S2, the semiconductor device is in a parallel state with the arm. In the cleaning process, the semiconductor device is first brushed horizontally, then vertically, and finally from top to bottom. When brushing horizontally, the non-arm side of the blue film is inclined downward. When brushing vertically, the vertical end of the blue film is inclined downward.

[0008] Preferably, when brushing horizontally, the non-arm side of the blue film is inclined downward by 30-60°.

[0009] Preferably, in the step S3, the water flow direction of the rinsing water is parallel to the semiconductor device, and the upper part of the non-hand gripping side of the blue film is inclined downward.

[0010] Preferably, in the step S4, the upper part of the non-hand gripping side of the blue film is inclined downward, and the air is blown from high to low, the air blowing is prohibited to the direction of the label, and the air is gradually blown forward until there is no water stain on the entire semiconductor device and the blue film.

[0011] Preferably, the cleaning liquid is prepared by mixing pure water and isopropyl alcohol at a mass ratio of 3:1, and whether there is dirt is observed under a microscope after the step S4 is completed.

[0012] Preferably, the step S4 includes a blow-drying evaluation process, which includes: Step S401: determining the difference between the temperature of the pure water used in the step S3 and the current environmental temperature based on the collection and calculation, determining the corresponding current temperature difference level based on the difference, and determining the current predicted fluctuation range of the pure water temperature based on the current temperature difference level and the temperature difference level-pure water temperature fluctuation range relationship; Step S402: determining the pure water temperature-related liquid characteristic parameter corresponding to the current predicted fluctuation range of the pure water temperature based on the pure water temperature-pure water temperature-related liquid characteristic parameter model, the pure water temperature-related liquid characteristic parameter including the pure water viscosity and the pure water tension; Step S403: obtaining the length of the cleaning surface of the present batch of semiconductor devices and the roughness of the cleaning surface Step S404: determining the water adhesion form factor based on the length of the cleaning surface of the present batch of semiconductor devices and the maximum pure water tension corresponding to the current predicted fluctuation range of the pure water temperature ; Step S405: determining the water resistance characteristic factor based on the pure water tension and the pure water viscosity corresponding to the current predicted fluctuation range of the pure water temperature and the surface roughness of the present batch of semiconductor devices; Step S406: obtaining the blow-drying control parameter range-flow rate fluctuation degree model corresponding to the nitrogen gun, and determining the flow rate fluctuation degree corresponding to the blow-drying control parameter before the blow-drying control parameter is adjusted; Step 407: determining the "flow rate fluctuation-resistance form combined characteristic coefficient" based on the step S404, the step S405, and the step S406; Step 408: when the "flow rate fluctuation-resistance form combined characteristic coefficient" does not meet the corresponding allowable range, a warning is given.

[0013] Preferably, it further includes: Step S409: determining the target drying control parameter of the present batch of semiconductor devices based on the nitrogen gun corresponding drying control parameter range-flow rate fluctuation model, the flow rate fluctuation-resistance form combined characteristic coefficient, and the standard drying control parameter; The actual drying control parameter of the nitrogen gun is the target drying control parameter for the semiconductor device drying.

[0014] Preferably, the step S3 based on the flushing of the flushing device, the determination process of the flushing device flushing parameter in step S3 includes: Step S301: obtaining the reference kinetic energy parameter corresponding to the present batch of semiconductor devices, and determining the corrected kinetic energy parameter of the present batch of semiconductor devices based on the collected roughness of the present batch of semiconductor devices; Step S302: determining the first water pressure range of the present batch of semiconductor devices based on the corrected kinetic energy parameter of the present batch of semiconductor devices, the surface area of the collected present batch of semiconductor devices, and the reference water outlet flow of the flushing device corresponding to the present batch of semiconductor devices; Step S303: selecting the target water pressure range from the first water pressure range based on the pre-obtained water pressure-acting radius range-feature flushing parameter model; the feature flushing parameter includes: stress concentration characteristic parameter and stress gradient parameter; When controlling the flushing of the present batch of semiconductor devices, the actual water outlet water pressure of the flushing device is in the target water pressure range.

[0015] The technical solutions of the present application are described in further detail below through the accompanying drawings and examples.

[0016] Compared with the prior art, the present application has the following beneficial effects: 1. Will not damage the semiconductor devices and the blue film.

[0017] 2. The chemical cleaning method is simple, and pure water, chemicals, and organic cleaning stations, and nitrogen are available.

[0018] 3. High cleaning efficiency, can realize batch processing of semiconductor devices on the blue film.

[0019] 4. Through the brushing of the brush in multiple directions and a specified number of times, combined with the flushing water parallel to the device and the directional drying operation, the chip surface dirt can be completely and thoroughly removed, and the cleaning quality can be ensured after visual inspection under a microscope.

[0020] Protecting the blue film and the device: controlling the inclination angle of the blue film during brushing and drying, and prohibiting air blowing to the label direction, etc. can effectively avoid the quality change of the blue film, and at the same time, there is basically no damage to the surface of the device, preventing secondary scratching and other problems, and ensuring the performance and yield of the device. BRIEF DESCRIPTION OF DRAWINGS

[0021] The accompanying drawings are included to provide a further understanding of the application, and are incorporated in and constitute a part of this specification, illustrate embodiments of the application, and together with the description serve to explain the principles of the application, and should not be taken as limiting the application. In the drawings: Figure 1 is a flow chart of the present application; Figure 2 is a schematic diagram of step S1 of the present application; Figure 3 is a schematic diagram of step S2 of the present application; Figure 4 is a schematic diagram of step S3 of the present application; Figure 5 is a schematic diagram of step S4 of the present application. DETAILED DESCRIPTION

[0022] The preferred embodiments of the present application will be described herein below with reference to the accompanying drawings, in which it is understood that the described preferred embodiments of the present application are merely for illustration and explanation of the present application, and are not intended to limit the present application.

[0023] In addition, the description such as "first", "second" and the like in the present application is only for the purpose of description, and does not mean to particularly indicate the order or sequence, nor to limit the present application, which is merely to distinguish the components or operations described by the same technical terms, and cannot be understood as indicating or implying the relative importance of the indicated technical features or implying the number of the indicated technical features. Therefore, the features defined as "first", "second" can explicitly or implicitly include at least one of the features. In addition, the technical solutions and technical features of various embodiments can be combined with each other, but it must be based on the realization of a person skilled in the art, when the combination of technical solutions appears to be contradictory or unachievable, it should be considered that the combination of technical solutions does not exist, nor within the protection scope required by the present application.

[0024] The present application provides the following embodiments: Embodiment 1, the present application provides a method for cleaning the surface of a semiconductor device on a blue film, as shown in Figures 1-5 , comprising: Step S1: configure cleaning chemicals; for reference Figure 2 After mixing, stir evenly with a glass cup; Step S2: use a brush to dip the cleaning chemicals and brush the semiconductor device; Step S3: use pure water to rinse the remaining chemicals on the surface of the semiconductor device; optionally, pure water rinsing for about 3 Min, to ensure that the cleaning is clean and no chemicals are left.

[0025] Step S4: use a nitrogen gun to dry the semiconductor device; Step S5: If the semiconductor device is dirty after step S4, continue cleaning; if the semiconductor device is clean, stop cleaning.

[0026] Preferably, the cleaning solution is prepared from isopropyl alcohol and pure water.

[0027] Preferably, in step S2, the semiconductor device is parallel to the arm. In the cleaning process, the semiconductor device is first brushed horizontally, then vertically, and then from top to bottom. When brushing horizontally, the non-arm holding side of the blue film is tilted downward. Figure 2 For the right side, the non-arm holding side of the blue film is tilted downward. When brushing vertically, the vertical end of the blue film is tilted downward.

[0028] According to the width of the brush, the chip is brushed 6-8 times horizontally and 6-8 times vertically, until the entire semiconductor device is brushed.

[0029] Preferably, when brushing horizontally, the non-arm holding side of the blue film is tilted downward by 30-60°.

[0030] Preferably, in step S3, the water flow direction is parallel to the semiconductor device, and the upper part of the non-arm holding side of the blue film is tilted downward.

[0031] Preferably, in step S4, the upper part of the non-arm holding side of the blue film is tilted downward, and the nitrogen gas is blown from high to low, but not towards the label, gradually forward, 6-8 times back and forth, for about 3 minutes, until there is no water stain on the entire chip and the blue film. The nitrogen drying time is related to the number of devices. Optionally, the nitrogen gas pressure can be about 0.1 Mpa.

[0032] Preferably, the cleaning solution is prepared from pure water and isopropyl alcohol in a mass ratio of 3:1, and step S4 is observed under a microscope to determine whether there is dirt.

[0033] The present application can solve the problem of dirt on the surface of the chip without causing quality changes in the blue film. The cleaning efficiency is high and the device surface is not damaged.

[0034] The beneficial effects of the above technical solutions are: 1. The semiconductor device and the blue film are not damaged.

[0035] 2. The chemical cleaning method is simple, and pure water, chemicals, and organic cleaning tables, and nitrogen are available.

[0036] 3. High cleaning efficiency, enabling batch processing of semiconductor device cleaning on the blue film.

[0037] 4. By brushing the chip surface with brushes in multiple directions (horizontal and vertical) and a specified number of times, combined with rinsing water parallel to the device and directional drying, dirt can be thoroughly removed. After cleaning, the chip can be visually inspected under a microscope to ensure the quality of cleaning.

[0038] Protecting the blue film and devices: Controlling the tilt angle of the blue film during brushing and drying, and prohibiting blowing air towards the label, can effectively prevent the blue film from undergoing quality changes, while causing minimal damage to the device surface, preventing secondary scratches and other problems, and ensuring device performance and yield.

[0039] Example 2, based on Example 1, step S4 includes a drying evaluation process (performed periodically, or corresponding to the predicted pure water temperature range after fluctuations): including: Step S401: Based on the data collection and calculation, determine the difference between the temperature of the pure water used in step S3 (which can be set to a fixed value or a fixed range) and the current ambient temperature (the temperature of the pure water used in step S3 minus the current ambient temperature). Based on the difference, determine the corresponding current temperature difference level. Based on the current temperature difference level and the relationship between the temperature difference level and the pure water temperature fluctuation range, determine the current predicted fluctuation range of the pure water temperature. Step S402: Based on the pure water temperature-pure water temperature-pure water characteristic parameter model, determine the pure water temperature-related chemical characteristic parameters corresponding to the current predicted fluctuation pure water temperature range. The pure water temperature-related chemical characteristic parameters include: pure water viscosity and pure water surface tension. Step S403: Obtain the length and roughness of the cleaning surface of the current batch of semiconductor devices. Step S404: Determine the water adhesion morphology factor based on the length of the cleaning surface of the current batch of semiconductor devices and the maximum tension of pure water corresponding to the current predicted fluctuation pure water temperature range. ; Step S405: Determine the water resistance characteristic factor based on the surface tension and viscosity of pure water corresponding to the current predicted fluctuation pure water temperature range and the surface roughness of the current batch of semiconductor devices. Step S406: Obtain the blow-drying control parameter range-flow rate fluctuation model corresponding to the nitrogen gun; determine the flow rate fluctuation corresponding to the blow-drying control parameter before adjustment (may be air pressure, may be controlled by controlling air pressure, nozzle and blow-drying distance may be set to be determined) (standard deviation of flow rate under blow-drying control parameter ÷ average value of flow rate under blow-drying control parameter; the above flow rate refers to the flow rate sensor arranged in the semiconductor device placement area of the blue film during the test for obtaining the model, based on the standard deviation and arithmetic mean of the average detection value of all flow rate sensors under the corresponding blow-drying control parameter); Step 407: Determine the "flow rate fluctuation-resistance form combined feature coefficient" based on steps S404, S405 and S406; Step 408: When the "flow rate fluctuation-resistance form combined feature coefficient" does not meet the corresponding allowable range ("allowable range" is a "safety threshold" determined by the limit experiment under the standard working condition, used to quantitatively judge whether the "water residual risk and blow-drying capacity" match, so as to realize early warning and precise regulation of the blow-drying process), warning is performed.

[0040] 1. Combine the process requirements to divide the temperature difference interval (for example, 0-2℃ is level 1, 2-4℃ is level 2, etc.), and substitute the calculated temperature difference into the interval for comparison to determine the corresponding level.

[0041] 2. The acquisition method of "current temperature difference level and temperature difference level-pure water temperature fluctuation range relationship" is as follows: First step: experimental scene design (covering core fluctuation conditions).

[0042] Select several typical working conditions (consistent with actual production line), fix the rated flushing parameters (such as rated flow rate 0.5-2L / min, pressure 0.2-0.5MPa) for each working condition, and only change the "temperature difference" and simulate different fluctuation intensities: Working condition 1: temperature difference 1℃ (pure water 25℃, environment 24℃); Working condition 2: temperature difference 3℃ (pure water 25℃, environment 22℃); Working condition 3: temperature difference 5℃ (pure water 25℃, environment 20℃); Second step: non-contact continuous temperature measurement (capture real fluctuations).

[0043] Under each working condition, continuously run the rated flushing parameters for several minutes (may include the commonly used flushing time of a single semiconductor device), collect the pure water temperature every 1 minute with an infrared thermometer (avoid local temperature measurement deviation caused by water flow disturbance; the pure water temperature on the semiconductor device), and record the complete temperature data sequence (such as the temperature data of working condition 2: 25℃→24.8℃→24.5℃→…→24.2℃→24.3℃, fluctuation around 24.5℃).

[0044] Step 3: Data statistics and fluctuation range calculation.

[0045] For each temperature data of the working condition, calculate the difference between "maximum temperature - minimum temperature", which is the fluctuation range of the working condition: Working condition 1 (temperature difference 1℃): fluctuation range ±0.3℃; the corresponding current predicted fluctuation range of pure water temperature is 25±0.3℃; Working condition 2 (temperature difference 3℃): fluctuation range ±0.8℃; Working condition 3 (temperature difference 5℃): fluctuation range ±1.4℃; Step 4: Classify working condition data according to "temperature difference level" and organize into a control table that only adapts to environmental factors, i.e. "current temperature difference level and temperature difference level-pure water temperature fluctuation range relationship (mapping table)".

[0046] 3. Obtain the "pure water temperature-pure water temperature associated water characteristic parameter model": The "pure water temperature-pure water temperature associated water characteristic parameter model" can be quickly obtained by calculating the model combined with the mapping table: call the pure water thermophysical property model to calculate the density, viscosity, surface tension and other basic parameters of pure water at different temperatures. Based on the experimental data mapping table of semiconductor cleaning process (water temperature, pure water viscosity and surface tension), the pure water parameters are coupled with water characteristics to form a "temperature-water characteristic" correlation model (which can be a pure water temperature range-pure water temperature associated water characteristic parameter mapping table).

[0047] ; is the water resistance characteristic factor; is the roughness of the cleaning surface of the present batch of semiconductor devices; is the standard pure water viscosity; is the roughness of the standard cleaning surface of the semiconductor device; is the current predicted fluctuation range of pure water temperature corresponding to the maximum viscosity-surface tension ratio; the maximum viscosity-surface tension ratio is obtained by dividing the surface tension corresponding to each temperature in the current predicted fluctuation range of pure water temperature by the viscosity; The stronger the synergistic effect of pure water viscosity and device roughness, the greater the flow resistance of water on the surface; ; is the surface tension of the current pure water corresponding to the temperature of the pure water; is the standard surface tension of pure water; is the standard semiconductor device length; D is the length of the cleaning surface of the present batch of semiconductor devices; is the water adhesion form factor; The greater the surface tension, the easier the drug solution "aggregates" into droplets, and the more irregular the residual form (small adhesion area but large thickness); the smaller the surface tension, the easier the drug solution spreads (large adhesion area but small thickness).

[0048] The longer the device length, the longer the flow path of the drug solution when vertically inclined cleaning, and the more likely the residue to "disperse and spread"; the shorter the length, the more likely the residue to "localize".

[0049] "Standard working condition experiment" refers to carrying out experiments under unified reference conditions (such as determining the optimal blow-drying control parameters that can meet the blow-drying efficiency and quality) to determine "standard parameters" as a reference for subsequent processes.

[0050] Specific reference includes: standard water temperature: usually select the commonly used reference temperature of semiconductor cleaning (such as 25℃) as the reference value of pure water physical properties (viscosity, tension). Standard semiconductor parameters: select the industry's "typical device specifications" as the reference, such as standard semiconductor device length (such as the design length of a certain general-purpose chip), standard surface roughness (such as the typical roughness of a silicon wafer), standard pure water viscosity (the viscosity of ultrapure water at 25℃), standard surface tension (the surface tension of pure water at 25℃); ; "Flow rate fluctuation-resistance form combined characteristic coefficient"; R is the flow rate fluctuation degree corresponding to the blow-drying control parameter before the current blow-drying control parameter is adjusted; Flow rate fluctuation degree reflects the state of airflow, and the shear force of airflow on residual liquid is not uniform when the flow rate fluctuation degree is large, and the viscosity will amplify this non-uniform resistance; Step 1: Experimental scene design (covering core fluctuation conditions).

[0051] Select several typical working conditions (consistent with actual production line), fix the rated flushing parameters for each working condition (such as rated flow rate 5L / min, pressure 0.3MPa), and only change "temperature difference" and, to simulate different fluctuation intensities: Working condition 1: temperature difference 1℃ (pure water 25℃, environment 24℃); Working condition 2: temperature difference 3℃ (pure water 25℃, environment 22℃); Working condition 3: temperature difference 5℃ (pure water 25℃, environment 20℃); Step 2: Non-contact continuous temperature measurement (capture real fluctuations).

[0052] Each working condition, the running rated flushing parameters for several minutes (cover "long continuous flushing" fluctuation cumulative effect), with an infrared thermometer every 1 minute acquisition 1 pure water temperature (avoid local temperature deviation caused by water flow disturbance), record the complete temperature data sequence (such as temperature data of working condition 2: 25℃→24.8℃→24.5℃→…→24.2℃→24.3℃, fluctuation around 24.5℃).

[0053] Third step: data statistics and fluctuation range calculation.

[0054] For each working condition, the temperature data, the difference between "maximum temperature-minimum temperature" is the fluctuation range of the working condition: Working condition 1 (temperature difference 1℃): fluctuation range ±0.3℃; Working condition 2 (temperature difference 3℃): fluctuation range ±0.8℃; Working condition 3 (temperature difference 5℃): fluctuation range ±1.4℃; The execution condition of step S40 is: when the semiconductor device batch switching, pure water system adjustment, environmental condition changes significantly, blow-dry equipment maintenance / parameter adjustment, or reach the periodic calibration cycle (such as once a week), trigger step S40 to ensure that the blow-dry parameters are accurately matched with the actual process state, and avoid redundant calculation.

[0055] The beneficial effects of the above technical scheme are: From pure water temperature fluctuation prediction (step S401) to water characteristic parameter correlation (step S402), and then to water resistance and adhesion form factor calculation (steps S404, S405), the "physical properties of water" and "device structure characteristics" are quantitatively coupled to ensure that the blow-dry parameters (such as flow rate) can accurately adapt to the actual water residue state of each batch of devices, and completely eliminate the parameter deviation problem of traditional "empirical" blow-dry.

[0056] Steps S407, S408 realize the forward identification of blow-dry risk through the calculation and allowable range verification of "flow fluctuation-resistance form joint characteristic coefficient". Before water stains and device damage occur, the coefficient can be used to warn and adjust the blow-dry parameters (such as optimizing the air pressure) in time, so as to minimize the device damage caused by blow-dry and significantly improve the product yield.

[0057] The collection and application of "the length and surface roughness of the cleaning surface of the present batch of semiconductor devices" (step S403) in the scheme can flexibly adapt to semiconductor devices of different sizes and structures. At the same time, the establishment of "temperature difference level-pure water temperature fluctuation range relationship" (step S401) is also compatible with different environmental temperature conditions, ensuring the stability of the blow-dry process under the conditions of seasonal temperature difference and workshop environment fluctuation.

[0058] Embodiment 3, further comprising, based on Embodiment 2: Step S409: determining the target drying control parameter of the present batch of semiconductor devices based on the nitrogen gun corresponding drying control parameter range-flow rate fluctuation model, the flow rate fluctuation-resistance form combined characteristic coefficient and the standard drying control parameter ; The actual drying control parameter (which can be flow rate; or can be directly adjusted by gas pressure) of the nitrogen gun for drying the semiconductor devices is the target drying control parameter.

[0059] ; is the flow rate fluctuation-resistance form combined characteristic coefficient threshold under standard conditions; is the correction index of the drying control parameter (value is 0.5-1.2); is the corresponding flow rate fluctuation in the nitrogen gun corresponding drying control parameter range-flow rate fluctuation model, The correction index needs to be determined through standard condition experiments, and the steps are as follows: Experimental scene design: select standard semiconductor devices and standard pure water conditions, fix the initial drying parameters, artificially introduce different degrees of risk disturbance (such as adjusting the pure water temperature to expand the fluctuation, replacing rough devices to simulate high resistance), so that the combined characteristic coefficient reaches 1.2 times, 1.5 times, etc. Gradient.

[0060] Parameter adjustment and data recording: for each gradient, adjust the drying control parameter until the drying effect meets the standard (no residue, no damage, both effect and efficiency meet the standard), record the corresponding parameter and the ratio of the combined characteristic coefficient to the standard threshold.

[0061] Exponential fitting: perform power function fitting on the experimental data to solve the optimal correction index.

[0062] Scene adaptation and verification: repeat the experiment to cover different device types and different cleaning processes to determine the universal correction index; if more precise control is needed, the correction index can be fitted separately for specific devices or processes (such as taking a smaller correction index for fragile devices to avoid excessive parameter adjustment).

[0063] The beneficial effects of the above technical solutions are: By quantifying the water residue difficulty and drying air flow stability through the "flow rate fluctuation-resistance form combined characteristic coefficient", and adjusting the target drying control parameter combined with the correction index, the flow rate or gas pressure of each batch can be accurately adapted to the actual process state.

[0064] ​​In any one of embodiments 1-3, the step S3 of flushing based on the flushing device, the process of determining the flushing device flushing parameter in the step S3 comprises: Step S301: obtaining the reference kinetic energy parameter corresponding to the present batch of semiconductor devices, and determining the corrected kinetic energy parameter of the present batch of semiconductor devices based on the collected roughness of the present batch of semiconductor devices; ; The reference kinetic energy parameter corresponding to the present batch of semiconductor devices; The reference water flow rate of the flushing device corresponding to the present batch of semiconductor devices; P is the reference water pressure of the flushing device corresponding to the present batch of semiconductor devices; S is the reference contact area (contact area with the blue film) corresponding to the present batch of semiconductor devices; The reference parameter corresponding to the present batch of semiconductor devices is the standard parameter verified by the same type (and same material) semiconductor devices corresponding to the present batch of semiconductor devices; The reference kinetic energy parameter E: the kinetic energy reference value of the semiconductor device in the "optimal flushing effect (less residue, no damage and no displacement of the semiconductor device)" in the historical batch (only one batch of semiconductor devices is selected as the historical / experimental reference). The reference contact area S: the "actual area (referred to as the standard area)" of the semiconductor device in contact with the blue film in the historical batch (used for normalization calculation to eliminate the influence of size difference). The reference roughness: the "actual roughness (referred to as the standard roughness)" of the contact surface of the semiconductor device in the historical batch (reflecting the reference of the surface micro-topography). The actual flushing flow rate corresponding to the "optimal flushing effect (less residue, no damage)" is the reference water flow rate, and the actual water pressure corresponding to the "optimal flushing effect (less residue, no damage)" is the reference water pressure; The kinetic energy parameter is the "effective kinetic energy density" when the water flow impacts the device.

[0065] ; Wherein, The corrected kinetic energy parameter of the present batch of semiconductor devices; The roughness of the contact surface of the present batch of semiconductor devices with the blue film; The reference roughness corresponding to the present batch of semiconductor devices; Step S302: determining the first water pressure range of the present batch of semiconductor devices based on the corrected kinetic energy parameter of the present batch of semiconductor devices, the collected surface area (cleaning surface area) of the present batch of semiconductor devices, and the reference water flow rate of the flushing device corresponding to the present batch of semiconductor devices; First, determine the target water flow rate corresponding to the present batch of semiconductor devices ; Wherein, A is the flushing surface area corresponding to the present batch of semiconductor devices; the reference flushing surface area corresponding to the present batch of semiconductor devices (see the above reference explanation); the first water pressure range ±Y; the actual contact area of the present batch of semiconductor devices with the blue film; Y is the allowable water pressure fluctuation range (the water pressure fluctuation range that ensures the flushing to be qualified); Step S303: screening the target water pressure range from the first water pressure range based on the pre-acquired water pressure-acting radius range-feature flushing parameter model (the model can be determined based on simulation or experiment, and predicts the commonly used cleaning water pressure of semiconductor devices and the commonly used water acting range under the fixed jet angle and jet distance); the feature flushing parameters include: stress concentration feature parameters and stress gradient parameters; The water pressure-acting radius range-feature flushing parameter model is to select a center point on the blue film as the water flow acting center before batch cleaning, and set flow rate sensors in different radius ranges at the center point, and multiple flow rate sensors are set on the periphery of each radius range; The actual water pressure is controlled to be different test water pressure ranges (water pressure, and the commonly used water pressure for cleaning semiconductor devices is specifically used), the water flow rate of the flushing device is controlled to be the rated flow rate, flushing tests are performed, each flushing test corresponds to a test water pressure, the average detection value of the flow rate sensor in each test water pressure test process is obtained, and the stress concentration feature parameters (for example, the stress concentration feature parameters of the current radius range are determined based on the average detection value of the flow rate sensor, that is, the maximum value Z of the average flow rate of all sub-radius ranges (for example, 0-1cm, 1-2cm; 2-3cm) included in the current radius range (for example, 2cm-3cm) under the current test water pressure, the minimum value L of the average flow rate of all sub-radius ranges included in the current radius range under the current test water pressure, and the arithmetic average G of the average flow rate of all sub-radius ranges included in the current radius range under the current test water pressure; and the stress concentration feature parameters of the current radius range under the current test flow rate = Z ÷ G) and the stress gradient parameters (specifically, (Z-L) ÷ (the difference between the median of the sub-radius range corresponding to Z and the median of the sub-radius range corresponding to L)) During the flushing of the present batch of semiconductor devices, the actual water pressure of the flushing device is controlled to be in the target water pressure range.

[0066] The beneficial effects of the above technical solutions are: The scheme accurately matches the effective kinetic energy density of water flow impact by "reference kinetic energy parameter (historical optimal benchmark) + present batch roughness correction", ensuring that the water flow can both fully strip the residues and will not damage the semiconductor devices due to excessive kinetic energy. Combined with the selection of water pressure range based on the "water pressure-acting radius-feature flushing parameter model", the stress distribution uniformity of water flow on the device surface is further optimized, avoiding residues or damage caused by local stress concentration, and finally achieving the optimal cleaning effect of "less residue, no damage and no device displacement".

[0067] The scheme can adapt to different batches and different semiconductor devices with different appearances. For batch differences, the scheme can flexibly adapt to devices of different production batches (even if there are deviations in size and surface appearance between batches) through the logic of "reference parameter (historical standard) + present batch personalized correction (roughness, surface area)".

[0068] With "historical optimal kinetic energy benchmark" as a constraint, the impact force and stress gradient of water flow on the device are strictly controlled through kinetic energy correction and water pressure range selection, which avoids the risk of semiconductor device displacement caused by improper flushing force from the root.

[0069] Obviously, those skilled in the art can make various modifications and variations to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalent technologies, the present application also intends to include these modifications and variations.

Claims

1. A method for cleaning the surface of a semiconductor device on a blue film, characterized by: The method comprises the following steps: S1: configuring cleaning solution; S2: using a brush to brush the semiconductor device after dipping in the cleaning solution; S3: using pure water to flush the cleaning solution remaining on the surface of the semiconductor device; S4: using a nitrogen gun to dry the semiconductor device; S5: if the semiconductor device is dirty after step S4, continue cleaning; if the semiconductor device is clean, stop cleaning.

2. The method according to claim 1, wherein the method is characterized by: The cleaning solution is configured by isopropyl alcohol and pure water.

3. The method according to claim 1, wherein the method is characterized by: In step S2, the semiconductor device is in a parallel state with the arm; In the cleaning process, the semiconductor device is first brushed horizontally, then vertically, and then from top to bottom. In the horizontal brushing, the non-arm side of the blue film is inclined downward. In the vertical brushing, the vertical end of the blue film is inclined downward.

4. The method according to claim 3, wherein the method is characterized by: In the horizontal brushing, the non-arm side of the blue film is inclined downward by 30-60°.

5. The method according to claim 3, wherein the method is characterized by: In step S3, the water flow direction is parallel to the semiconductor device, and the non-arm side of the blue film is inclined downward.

6. The method according to claim 1, wherein the method is characterized by: In step S4, the non-arm side of the blue film is inclined downward, and the nitrogen is blown from high to low, and the blowing direction is prohibited to be toward the label, and the blowing is gradually forward until there is no water stain on the semiconductor device and the blue film.

7. The method according to claim 2, wherein the method is characterized by: The cleaning solution is configured by pure water and isopropyl alcohol in a mass ratio of 3:1, and whether there is dirt is observed under a microscope after step S4.

8. The method according to claim 1, wherein the method is characterized by: Step S4 includes a drying evaluation process, which comprises: S401: determining the difference between the temperature of the pure water used in step S3 and the current environmental temperature based on collection and calculation, determining the corresponding current temperature difference level based on the difference, and determining the current predicted fluctuation range of the pure water temperature based on the current temperature difference level and the temperature difference level-pure water temperature fluctuation range relationship; S402: determining the temperature-related drug solution characteristic parameter of the pure water corresponding to the current predicted fluctuation range of the pure water temperature based on the temperature of the pure water-temperature-related water characteristic parameter model of the pure water, the temperature-related drug solution characteristic parameter of the pure water including the viscosity of the pure water and the surface tension of the pure water; S403: obtaining the length of the cleaned surface of the semiconductor device and the roughness of the cleaned surface of the semiconductor device; Step S404: determining the water adhesion form factor based on the length of the cleaning surface of the present batch of semiconductor devices, and the maximum water tension corresponding to the present predicted fluctuating pure water temperature range ; S405: determining the water resistance characteristic factor based on the surface roughness of the current batch of semiconductor devices and the surface tension and viscosity of the pure water corresponding to the current predicted fluctuation range of the pure water temperature; S406: obtaining the drying control parameter range-flow rate fluctuation degree model corresponding to the nitrogen gun, and determining the flow rate fluctuation degree corresponding to the drying control parameter before adjustment; S407: determining the "flow rate fluctuation-resistance form combined characteristic coefficient" based on steps S404, S405, and S406; S408: when the "flow rate fluctuation-resistance form combined characteristic coefficient" does not meet the corresponding allowable range, a warning is given.

9. The method according to claim 8, wherein the method is characterized by: Further comprising: S409: determining the target drying control parameter of the current batch of semiconductor devices based on the drying control parameter range-flow rate fluctuation degree model corresponding to the nitrogen gun, the "flow rate fluctuation-resistance form combined characteristic coefficient", and the standard drying control parameter. Actual drying control parameters of the nitrogen gun are the target drying control parameters for drying the semiconductor device.

10. The method of claim 1, wherein the method is implemented to clean the surface of the semiconductor device on the blue film. The flushing device is flushed in the step S3, and the determination process of the flushing device flushing parameters in the step S3 includes: In step S301, the reference kinetic energy parameters corresponding to the present batch of semiconductor devices are obtained, and the correction kinetic energy parameters of the present batch of semiconductor devices are determined based on the roughness of the collected present batch of semiconductor devices. In step S302, the first water pressure range of the present batch of semiconductor devices is determined based on the correction kinetic energy parameters of the present batch of semiconductor devices, the surface area of the collected present batch of semiconductor devices, and the reference water flow of the flushing device corresponding to the present batch of semiconductor devices. In step S303, the target water pressure range is selected from the first water pressure range based on the pre-obtained water pressure-acting radius range-feature flushing parameter model; the feature flushing parameters include stress concentration feature parameters and stress gradient parameters. When the present batch of semiconductor devices is flushed, the actual water outlet pressure of the flushing device is in the target water pressure range.

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