Mass spectrometer ion source cleaning method, system, terminal and storage medium

Abstract

The application provides a mass spectrometer ion source cleaning method, system, terminal and storage medium, relates to the technical field of mass spectrometer ion source cleaning, and comprises the following steps: obtaining impurity detection parameters and ultrasonic cleaning parameters of a preset ion source component; analyzing the impurity detection parameters and the ultrasonic cleaning parameters to determine an ion source cleaning time; obtaining cleaning liquid container size parameters, a cleaning liquid height and ion source component size parameters; analyzing the cleaning liquid container size parameters, the cleaning liquid height, the ion source component size parameters, the impurity detection parameters to determine ion source component motion parameters; and controlling a preset ultrasonic cleaning machine to clean the ion source component according to the ion source cleaning time and the ion source component motion parameters. The application has the effect of ensuring good cleaning effect of the mass spectrometer ion source.

Description

Technical Field

[0001] This application relates to the technical field of cleaning ion sources for mass spectrometers, and in particular to a method, system, terminal, and storage medium for cleaning ion sources for mass spectrometers. Background Technology

[0002] Mass spectrometer ion source cleaning is a routine maintenance operation to remove impurities adhering to its internal components. The purpose is to restore the performance of the ion source and ensure the sensitivity and accuracy of detection.

[0003] In related technologies, ultrasonic cleaning is usually used to clean the ion source of a mass spectrometer. For example, the ion source components are first disassembled, a solvent is selected according to the type of impurity, and the ion source components are completely immersed in a beaker containing the solvent. Then the beaker is placed in an ultrasonic cleaner and cleaned for 10-20 minutes. After cleaning, the components are rinsed with fresh solvent and reinstalled after the components are completely dry.

[0004] Regarding the aforementioned technologies, ultrasonic cleaning of ion sources involves cleaning for a fixed duration. However, due to varying operating conditions of mass spectrometers, the number of impurities on the ion source also differs. If cleaning is performed for a fixed duration, there may be cases of incomplete or excessive cleaning, resulting in poor cleaning performance of the ion source components. There is still room for improvement. Summary of the Invention

[0005] To ensure a good cleaning effect for the ion source, this application provides a method, system, terminal, and storage medium for cleaning the ion source of a mass spectrometer.

[0006] In a first aspect, this application provides a method for cleaning an ion source for a mass spectrometer, employing the following technical solution:

[0007] A method for cleaning an ion source for a mass spectrometer, comprising:

[0008] Obtain the impurity detection parameters and ultrasonic cleaning parameters of the preset ion source components;

[0009] The impurity detection parameters and ultrasonic cleaning parameters were analyzed to determine the ion source cleaning time;

[0010] Obtain the dimensions of the cleaning fluid container, the height of the cleaning fluid, and the dimensions of the ion source components;

[0011] The dimensions of the cleaning solution container, the height of the cleaning solution, the dimensions of the ion source components, and the impurity detection parameters were analyzed to determine the motion parameters of the ion source components.

[0012] The ultrasonic cleaner controls the cleaning of the ion source components according to the ion source cleaning time and the motion parameters of the ion source components.

[0013] By adopting the above technical solution, the ion source cleaning time is determined after analyzing the impurity detection parameters and ultrasonic cleaning parameters. The motion parameters of the ion source components are determined after analyzing the cleaning liquid container size parameters, cleaning liquid height, ion source component size parameters, and impurity detection parameters. Thus, the ultrasonic cleaner is controlled to clean the ion source components according to the ion source cleaning time and ion source component motion parameters, so that the ion source cleaning has a precise time and can prevent impurities from re-attaching during the cleaning process, thereby ensuring a good cleaning effect of the mass spectrometer ion source.

[0014] Optionally, the steps of analyzing impurity detection parameters and ultrasonic cleaning parameters to determine the ion source cleaning time include:

[0015] The impurity type and initial impurity content are determined based on the impurity detection parameters;

[0016] The solvent type is determined based on the impurity type and the preset impurity solvent correspondence;

[0017] The basic stripping difficulty coefficient is determined based on the correspondence between impurity type and preset impurity stripping difficulty.

[0018] The basic stripping difficulty coefficient is adjusted based on the initial impurity content to generate the actual stripping difficulty coefficient.

[0019] Obtain the material of the ion source components;

[0020] The material coefficient is determined based on the correspondence between the material of the ion source component and the preset material coefficient value;

[0021] Determine the ultrasonic power based on the ultrasonic cleaning parameters;

[0022] The material coefficient, actual peeling difficulty coefficient, ultrasonic power, solvent type, and preset benchmark difficulty coefficient are analyzed to determine the benchmark removal rate of impurities.

[0023] The initial impurity content, actual stripping difficulty coefficient, baseline difficulty coefficient, material coefficient, ultrasonic power, and baseline removal rate were analyzed to determine the ion source cleaning time.

[0024] By adopting the above technical solution, the impurity type and content are determined based on the impurity detection parameters, the solvent type is determined based on the correspondence between the impurity type and the impurity solvent, the basic stripping difficulty coefficient is determined based on the correspondence between the impurity type and the impurity stripping difficulty, and the actual stripping difficulty coefficient is generated after correcting the basic stripping difficulty coefficient based on the initial impurity content. The material coefficient is determined based on the correspondence between the ion source component material and the material coefficient value. Then, the baseline removal rate of the impurities is determined after analyzing the material coefficient, the actual stripping difficulty coefficient, the ultrasonic power, the solvent type, and the baseline removal rate. Finally, the ion source cleaning time is determined after analyzing the initial impurity content, the actual stripping difficulty coefficient, the baseline difficulty coefficient, the material coefficient, the ultrasonic power, and the baseline removal rate, thereby ensuring a good cleaning effect of the mass spectrometer ion source.

[0025] Optionally, the steps of analyzing the material coefficient, actual peeling difficulty coefficient, ultrasonic power, solvent type, and preset benchmark difficulty coefficient to determine the benchmark removal rate of impurities include:

[0026] The actual stripping difficulty coefficient and the benchmark difficulty coefficient are analyzed to determine the difficulty attenuation factor;

[0027] The ultrasonic power and the preset reference power are analyzed to determine the power influence factor;

[0028] The solvent compatibility coefficient is determined based on the correspondence between solvent type and preset impurity removal compatibility level.

[0029] The material coefficient, actual peeling difficulty coefficient, difficulty attenuation factor, ultrasonic power, power influence factor and solvent compatibility coefficient were analyzed to determine the benchmark removal rate of impurities.

[0030] By adopting the above technical solution, the difficulty attenuation factor is determined after analyzing the actual peeling difficulty coefficient and the benchmark difficulty coefficient, the power influence factor is determined after analyzing the ultrasonic power and the benchmark power, and the solvent compatibility coefficient is determined according to the correspondence between solvent type and impurity removal compatibility level. Thus, the benchmark removal rate of impurities is determined after analyzing the material coefficient, actual peeling difficulty coefficient, difficulty attenuation factor, ultrasonic power, power influence factor and solvent compatibility coefficient, thereby improving the accuracy of ion source cleaning time.

[0031] Optionally, the steps to determine the ion source cleaning time include analyzing the initial impurity content, actual peeling difficulty coefficient, baseline difficulty coefficient, material coefficient, ultrasonic power, and baseline removal rate.

[0032] The initial impurity content and baseline removal rate were analyzed to determine the impurity cleaning time;

[0033] The preset safe time reference constant, ultrasonic power, and material coefficient were analyzed to determine the maximum safe cleaning time for the ion source components.

[0034] Determine whether the actual stripping difficulty coefficient is not greater than the benchmark difficulty coefficient;

[0035] If the difficulty coefficient is not greater than the baseline, the corresponding impurity cleaning time is defined as the rough cleaning stage time.

[0036] The time of the rough washing stage and the maximum safe washing time were analyzed to determine the rough washing time;

[0037] If the difficulty coefficient is greater than the baseline, the corresponding impurity cleaning time will be defined as the fine cleaning stage time.

[0038] The fine cleaning stage time and the maximum safe cleaning time were analyzed to determine the fine cleaning time;

[0039] Correlate the coarse wash time and fine wash time to generate the ion source cleaning time.

[0040] By adopting the above technical solution, the impurity cleaning time is determined after analyzing the initial impurity content and the benchmark removal rate. The maximum safe cleaning time of the ion source component is determined after analyzing the safe time benchmark constant, ultrasonic power, and material coefficient. When the actual peeling difficulty coefficient is determined to be no greater than the benchmark difficulty coefficient, the corresponding impurity cleaning time is defined as the coarse cleaning stage time, and the coarse cleaning time is determined after analyzing the coarse cleaning stage time and the maximum safe cleaning time. If it is greater than the benchmark difficulty coefficient, the corresponding impurity cleaning time is defined as the fine cleaning stage time, and the fine cleaning time is determined after analyzing the fine cleaning stage time and the maximum safe cleaning time. The ion source cleaning time is obtained by correlating the coarse cleaning time and the fine cleaning time, thereby ensuring the accuracy of the ion source cleaning time.

[0041] Optionally, the steps of analyzing the size parameters of the cleaning fluid container, the height of the cleaning fluid, the size parameters of the ion source components, and the impurity detection parameters to determine the motion parameters of the ion source components include:

[0042] Obtain the type of ion source component;

[0043] The cleaning posture is determined based on the type of ion source component and the preset correspondence between component postures;

[0044] The size parameters of the cleaning fluid container, the height of the cleaning fluid, the cleaning posture, and the size parameters of the ion source components are analyzed to determine the bottom movement path, the middle movement path, and the top movement path.

[0045] The impurity density is determined based on the impurity detection parameters, and the cleaning fluid density is obtained.

[0046] The impurity density, cleaning fluid density, cleaning posture, bottom movement path, middle movement path, and top movement path are analyzed to determine the motion parameters of the ion source components.

[0047] By adopting the above technical solution, the cleaning posture is determined according to the correspondence between the ion source component type and the component posture. Then, after analyzing the parameters of the cleaning fluid container, the height of the cleaning fluid, the cleaning posture, and the size parameters of the ion source component, the bottom moving path, the middle moving path, and the top moving path are determined. Furthermore, after analyzing the impurity density, the density of the cleaning fluid, the cleaning posture, the bottom moving path, the middle moving path, and the top moving path, the motion parameters of the ion source component are determined, thereby preventing the re-adhesion of impurities on the ion source component during the cleaning process.

[0048] Optionally, the steps of analyzing impurity density, cleaning fluid density, cleaning posture, bottom movement path, middle movement path, and top movement path to determine the motion parameters of the ion source components include:

[0049] The density of impurities and the density of the cleaning solution were analyzed to determine the density comparison results;

[0050] The density comparison result is determined to be either the preset low-density impurity result, the preset high-density impurity result, or the preset mixed density result.

[0051] If the result is a low-density impurity, then the top movement path and cleaning posture are correlated to generate motion parameters for the ion source components;

[0052] If the result is a high density of impurities, then the bottom movement path and cleaning posture are correlated to generate motion parameters of the ion source component;

[0053] If the result is a mixture density, the impurity detection parameters, ion source component size parameters, cleaning posture, central movement path, and cleaning fluid density are analyzed to generate ion source component motion parameters.

[0054] By adopting the above technical solution, the density comparison results are determined after analyzing the impurity density and cleaning fluid density. When the result is determined to be a low-density impurity, the motion parameters of the ion source component are obtained by directly associating the top movement path and cleaning posture. When the result is determined to be a high-density impurity, the motion parameters of the ion source component are obtained by directly associating the bottom movement path and cleaning posture. When the result is determined to be a mixed density, the motion parameters of the ion source component are generated by analyzing the impurity detection parameters, ion source component size parameters, cleaning posture, middle movement path, and cleaning fluid density, thereby preventing impurities from re-adhering to the ion source component during the cleaning process.

[0055] Optionally, the steps of analyzing impurity detection parameters, ion source component size parameters, cleaning posture, central movement path, and cleaning fluid density to generate ion source component motion parameters include:

[0056] The average particle size of impurities is determined based on the impurity detection parameters, and the dynamic viscosity of the cleaning fluid is obtained.

[0057] The average particle size of impurities, impurity density, cleaning fluid density, and cleaning fluid dynamic viscosity were analyzed to determine the impurity movement velocity.

[0058] The cleaning posture and ion source component size parameters were analyzed to determine the height of the ion source component;

[0059] The height of the ion source components and the speed of impurity movement are analyzed to determine the directional rotation waiting time;

[0060] The cleaning posture, central movement path, and directional rotation waiting time are correlated to generate motion parameters for the ion source components.

[0061] By adopting the above technical solution, the average particle size of impurities is determined based on impurity detection parameters. Then, the impurity movement speed is obtained by analyzing the average particle size, impurity density, cleaning fluid density, and cleaning fluid dynamic viscosity. The height of the ion source component is determined by analyzing the cleaning posture and ion source component size parameters. Then, the directional rotation waiting time is determined by analyzing the ion source component height and impurity movement speed. Finally, the motion parameters of the ion source component are determined by correlating the cleaning posture, the central movement path, and the directional rotation waiting time, thereby preventing impurities from re-adhering to the ion source component during the cleaning process.

[0062] Secondly, this application provides a mass spectrometer ion source cleaning system, which adopts the following technical solution:

[0063] A mass spectrometer ion source cleaning system, comprising:

[0064] The acquisition module is used to acquire impurity detection parameters, ultrasonic cleaning parameters, cleaning fluid container size parameters, cleaning fluid height, and ion source component size parameters;

[0065] A memory for storing a program for a mass spectrometer ion source cleaning method as described in any of the preceding claims;

[0066] The processor and the program in the memory can be loaded and executed by the processor to implement a mass spectrometer ion source cleaning method as described in any of the above.

[0067] By adopting the above technical solution, a program for cleaning a mass spectrometer ion source stored in the memory is loaded and executed by a processor. The control acquisition module acquires a series of data related to the ion source cleaning time and the motion parameters of the ion source components. After analyzing the impurity detection parameters and ultrasonic cleaning parameters, the ion source cleaning time is determined. After analyzing the cleaning liquid container size parameters, cleaning liquid height, ion source component size parameters, and impurity detection parameters, the motion parameters of the ion source components are determined. Based on the ion source cleaning time and the motion parameters of the ion source components, the ultrasonic cleaner is controlled to clean the ion source components, thereby ensuring a good cleaning effect of the ion source.

[0068] Thirdly, this application provides a smart terminal, which adopts the following technical solution:

[0069] A smart terminal includes a memory and a processor, wherein the memory stores a computer program that can be loaded by the processor and executed as described in any of the preceding claims, a method for cleaning a mass spectrometer ion source.

[0070] By adopting the above technical solution, a program for cleaning a mass spectrometer ion source stored in the memory is loaded and executed by a processor. The control acquisition module acquires a series of data related to the ion source cleaning time and the motion parameters of the ion source components. After analyzing the impurity detection parameters and ultrasonic cleaning parameters, the ion source cleaning time is determined. After analyzing the cleaning liquid container size parameters, cleaning liquid height, ion source component size parameters, and impurity detection parameters, the motion parameters of the ion source components are determined. Based on the ion source cleaning time and the motion parameters of the ion source components, the ultrasonic cleaner is controlled to clean the ion source components, thereby ensuring a good cleaning effect of the ion source.

[0071] Fourthly, this application provides a computer storage medium capable of storing corresponding programs, which facilitates ensuring a good cleaning effect from the ion source, and adopts the following technical solution:

[0072] A computer-readable storage medium storing a computer program that can be loaded by a processor and executed as described in any of the preceding claims, a method for cleaning a mass spectrometer ion source.

[0073] By adopting the above technical solution, a program for cleaning a mass spectrometer ion source stored in the memory is loaded and executed by a processor. The control acquisition module acquires a series of data related to the ion source cleaning time and the motion parameters of the ion source components. After analyzing the impurity detection parameters and ultrasonic cleaning parameters, the ion source cleaning time is determined. After analyzing the cleaning liquid container size parameters, cleaning liquid height, ion source component size parameters, and impurity detection parameters, the motion parameters of the ion source components are determined. Based on the ion source cleaning time and the motion parameters of the ion source components, the ultrasonic cleaner is controlled to clean the ion source components, thereby ensuring a good cleaning effect of the ion source.

[0074] In summary, this application includes at least one of the following beneficial technical effects:

[0075] 1. The ion source cleaning time is determined by analyzing the impurity detection parameters and ultrasonic cleaning parameters. The motion parameters of the ion source components are determined by analyzing the size parameters of the cleaning fluid container, the height of the cleaning fluid, the size parameters of the ion source components, and the impurity detection parameters. Based on the ion source cleaning time and the motion parameters of the ion source components, the ultrasonic cleaner is controlled to clean the ion source components, thereby ensuring a good cleaning effect of the ion source.

[0076] 2. The impurity cleaning time is determined by analyzing the initial impurity content and the baseline removal rate. The maximum safe cleaning time for the ion source components is determined by analyzing the safe time reference constant, ultrasonic power, and material coefficient. When the actual peeling difficulty coefficient is not greater than the baseline difficulty coefficient, the corresponding impurity cleaning time is defined as the coarse cleaning stage time. The coarse cleaning time is determined by analyzing the coarse cleaning stage time and the maximum safe cleaning time. If the actual difficulty coefficient is greater than the baseline difficulty coefficient, the corresponding impurity cleaning time is defined as the fine cleaning stage time. The fine cleaning time is determined by analyzing the fine cleaning stage time and the maximum safe cleaning time. By correlating the coarse cleaning time and the fine cleaning time, the ion source cleaning time is obtained. This ensures the accurate cleaning time of the ion source and protects the ion source material from damage, thereby ensuring a good cleaning effect of the ion source.

[0077] 3. By determining the cleaning posture based on the correspondence between the ion source component type and the component posture, and then analyzing the size parameters of the cleaning fluid container, the height of the cleaning fluid, the posture of the cleaning fluid, and the size parameters of the ion source component, the bottom moving path, the middle moving path, and the top moving path are determined. Then, the motion parameters of the ion source component are analyzed based on the impurity density, the density of the cleaning fluid, the cleaning posture, the bottom moving path, the middle moving path, and the top moving path, so as to ensure that the ion source component prevents the re-adhesion of impurities through movement during the cleaning process. Attached Figure Description

[0078] Figure 1 This is a flowchart of a method for cleaning a mass spectrometer ion source according to an embodiment of this application.

[0079] Figure 2 This is a flowchart illustrating the steps in this application embodiment to analyze impurity detection parameters and ultrasonic cleaning parameters to determine the ion source cleaning time.

[0080] Figure 3 This is a flowchart illustrating the steps in this application embodiment to analyze the material coefficient, actual peeling difficulty coefficient, ultrasonic power, solvent type, and preset benchmark difficulty coefficient to determine the benchmark removal rate of impurities.

[0081] Figure 4 This is a flowchart illustrating the steps in this application to analyze the initial impurity content, actual stripping difficulty coefficient, benchmark difficulty coefficient, material coefficient, ultrasonic power, and benchmark removal rate to determine the ion source cleaning time.

[0082] Figure 5 This is a flowchart illustrating the steps in this application to analyze the size parameters of the cleaning fluid container, the height of the cleaning fluid, the size parameters of the ion source component, and the impurity detection parameters to determine the motion parameters of the ion source component.

[0083] Figure 6This is a flowchart of the steps in this application embodiment to analyze impurity density, cleaning fluid density, cleaning posture, bottom moving path, middle moving path and top moving path to determine the motion parameters of the ion source component.

[0084] Figure 7 This is a flowchart of the steps in this application embodiment to analyze impurity detection parameters, ion source component size parameters, cleaning posture, central movement path and cleaning fluid density to generate ion source component motion parameters. Detailed Implementation

[0085] To make the purpose, technical solution, and advantages of this application clearer, the following description is provided in conjunction with the appendix. Figures 1 to 7 The present application will be further described in detail below with reference to embodiments. It should be understood that the specific embodiments described herein are for illustrative purposes only and are not intended to limit the scope of the application.

[0086] This application discloses a method for cleaning the ion source of a mass spectrometer. Specifically, it discloses an ultrasonic cleaner, a processing terminal, and a motion control device. The processing terminal is communicatively connected to both the ultrasonic cleaner and the motion control device to achieve data interaction and control. After receiving impurity detection parameters and ultrasonic cleaning parameters, the processing terminal analyzes these parameters to determine the ion source cleaning time. It also analyzes the cleaning fluid container parameters, cleaning fluid height, ion source component size parameters, and impurity detection parameters to determine the ion source component motion parameters. Based on the ion source cleaning time and ion source component motion parameters, the ultrasonic cleaner and the motion control device are controlled to clean the ion source components, thereby ensuring a good cleaning effect for the ion source.

[0087] Reference Figure 1 This application discloses a method for cleaning an ion source for a mass spectrometer, comprising the following steps:

[0088] Step S100: Obtain the impurity detection parameters and ultrasonic cleaning parameters of the preset ion source component.

[0089] Among them, the impurity detection parameters refer to the relevant parameters of impurities attached to the ion source components, including impurity type, initial impurity content, impurity density, and average impurity particle size. These parameters are obtained by laser-induced breakdown spectroscopy, Raman spectroscopy, and laser particle size analyzer. The impurity type and initial impurity content are strongly correlated with the difficulty of ion source cleaning. The impurity type determines the difficulty of removal, and the higher the initial impurity content, the greater the cleaning difficulty and the longer the cleaning time. The impurity density determines the direction of movement of the impurities in the cleaning solution after removal. The average impurity particle size is strongly correlated with the movement speed of the impurities; the larger the average impurity particle size, the greater the movement speed of the impurities. This provides data support for subsequent specific analysis of impurity cleaning time and ion source component movement parameters.

[0090] Ultrasonic cleaning parameters include the ultrasonic power for different cleaning stages, which are preset by the operator. For example, there are coarse cleaning power and fine cleaning power. The cleaning stages are divided into coarse cleaning and fine cleaning stages. The coarse cleaning stage cleans loose impurities that are not difficult to clean, so a lower power is used, and the coarse cleaning power is set to 150W-250W. The fine cleaning stage cleans stubborn impurities that are difficult to clean, so a higher power is used, and the fine cleaning power is set to 300W-400W. By setting different cleaning power, it is possible to ensure precise cleaning of different types of impurities and ensure the cleaning effect.

[0091] Step S101: Analyze the impurity detection parameters and ultrasonic cleaning parameters to determine the ion source cleaning time.

[0092] The ion source cleaning time refers to the time required for the ultrasonic cleaner to completely remove impurities attached to the ion source components. This includes both rough cleaning and fine cleaning times, and is obtained by analyzing impurity detection parameters and ultrasonic cleaning parameters at the processing terminal. Specific methods are detailed in [reference needed]. Figure 2 The steps.

[0093] Step S102: Obtain the size parameters of the cleaning fluid container, the height of the cleaning fluid, and the size parameters of the ion source component.

[0094] Among them, the size parameter of the cleaning fluid container refers to the horizontal length of the cleaning fluid container, which is determined by the operator using measuring tools to measure the cleaning fluid container.

[0095] The cleaning fluid level refers to the vertical height of the cleaning fluid, which is determined by the operator using measuring tools to measure the cleaning fluid level.

[0096] The dimensional parameters of the ion source component refer to its length, width, and height, which are determined by the operator using measuring tools to measure the ion source component.

[0097] By calling the size parameters of the cleaning fluid container, the height of the cleaning fluid, and the size parameters of the ion source component, data support is provided for subsequent calculation of the movement path of the ion source component within the cleaning container.

[0098] Step S103: Analyze the size parameters of the cleaning solution container, the height of the cleaning solution, the size parameters of the ion source component, and the impurity detection parameters to determine the motion parameters of the ion source component.

[0099] Among them, the motion parameters of the ion source component refer to the motion parameters of the ion source component during the cleaning process, including the motion path of the ion source component, the rising height, the falling height, and the directional rotation waiting time. These parameters are obtained by the processing terminal after analyzing the size parameters of the cleaning fluid container, the cleaning fluid height, the size parameters of the ion source component, and the impurity detection parameters. Specific methods are described in [reference needed]. Figure 5The steps involve analyzing and calculating the motion parameters of the ion source components to ensure that the ion source stays away from the impurities removed during the cleaning process, preventing impurities from re-adhering to the ion source components.

[0100] Step S104: Control the preset ultrasonic cleaner to clean the ion source components according to the ion source cleaning time and the motion parameters of the ion source components.

[0101] In this process, after determining the ion source cleaning time and the motion parameters of the ion source components, the processing terminal starts the ultrasonic cleaner according to the coarse cleaning time and coarse cleaning power, and controls the motion control device to drive the ion source components to perform serpentine motion or horizontal reciprocating motion according to the motion parameters of the ion source components. After the coarse cleaning stage is completed, the processing terminal stops the ultrasonic cleaner, and the operator changes the cleaning solution. Then, the processing terminal starts the ultrasonic cleaner according to the fine cleaning time and fine cleaning power, and controls the motion device to drive the ion source components to perform serpentine motion or horizontal reciprocating motion according to the motion parameters of the ion source components until the cleaning is completed.

[0102] Reference Figure 2 The steps for determining the ion source cleaning time by analyzing impurity detection parameters and ultrasonic cleaning parameters include:

[0103] Step S200: Determine the impurity type and initial impurity content based on the impurity detection parameters.

[0104] Among them, impurity type refers to the different kinds of impurities attached to the ion source component. The processing terminal identifies and calls them from the impurity detection parameters. The impurity type directly determines the difficulty of stripping, so as to determine the actual stripping difficulty coefficient in the future.

[0105] The initial impurity content refers to the initial content of impurities attached to the ion source components. It is identified and retrieved by the processing terminal from the impurity detection parameters. The higher the initial impurity content, the longer the ion source cleaning time, thus providing data support for subsequent analysis of the ion source cleaning time.

[0106] Step S201: Determine the solvent type based on the impurity type and the preset impurity solvent correspondence.

[0107] Among them, the impurity solvent correspondence refers to the correspondence between the impurity type and the solvent type used to clean different types of impurities. For example, the solvent type corresponding to alkali metals is deionized water, and the solvent type corresponding to metal oxides is 5% nitric acid solution. The operator forms a mapping table by matching the impurity type and the solvent type one by one.

[0108] Solvent type refers to the different types of solvents used to clean different types of impurities. The processing terminal finds the solvent type in the mapping table of impurity-solvent correspondence. By identifying and calling the solvent type, the compatibility between the impurity and the solvent can be determined, so as to determine the baseline removal rate in the future.

[0109] Step S202: Determine the basic stripping difficulty coefficient based on the impurity type and the preset correspondence between impurity stripping difficulty.

[0110] The correspondence between impurity stripping difficulty refers to the correspondence between impurity type and the difficulty of stripping different types of impurities. For example, the basic stripping difficulty coefficient for alkali metals is 2, and the basic stripping difficulty coefficient for metal oxides is 5. Operators form a mapping table by matching impurity types with basic stripping difficulty coefficients one by one.

[0111] The basic stripping difficulty coefficient refers to a benchmark value that quantifies the ease of stripping impurities from the ion source surface based on the type of impurities. It is obtained by the processing terminal by looking up the impurity type in a mapping table corresponding to the stripping difficulty. By identifying and calling the basic stripping difficulty coefficient, the inherent stripping characteristics of different impurities can be obtained, thereby providing data support for determining the actual stripping difficulty coefficient.

[0112] Step S203: Correct the basic stripping difficulty coefficient based on the initial impurity content to generate the actual stripping difficulty coefficient.

[0113] The actual stripping difficulty coefficient refers to a comprehensive correction based on the basic stripping difficulty coefficient and the initial impurity content. It is obtained by analyzing the initial impurity content and the basic stripping difficulty coefficient at the processing terminal, and can be expressed as follows: ,in Based on the difficulty level of stripping away the basics, This represents the initial content of impurities. The actual stripping difficulty coefficient is determined by the initial content of impurities after the basic stripping difficulty coefficient is determined. The higher the initial content of impurities, the greater the actual stripping difficulty coefficient. The actual stripping difficulty coefficient can be used to determine the cleaning stage and baseline removal rate of impurities, so as to facilitate the subsequent calculation of ion source cleaning time.

[0114] Step S204: Obtain the material of the ion source component.

[0115] Among them, the material of the ion source component refers to the physical material that makes up the ion source component. It can be found in the paper manual provided by the equipment manufacturer. By analyzing the material of the ion source component, the tolerance of the ion source component to solvent can be determined, so as to determine the material coefficient in the future.

[0116] Step S205: Determine the material coefficient based on the correspondence between the material of the ion source component and the preset material coefficient value.

[0117] The material coefficient value correspondence refers to the correspondence between the material of the ion source component and its material coefficient value. For example, the material coefficient value of stainless steel in deionized water is 1.2 and the material coefficient value of stainless steel in 5% nitric acid solution is 1.0. The material coefficient value of alumina ceramic in deionized water is 1.2 and the material coefficient value of alumina ceramic in 5% nitric acid solution is 0.8. The operator will form a mapping table by matching the material of the ion source component with its material coefficient value.

[0118] The material coefficient refers to the tolerance of the ion source component material to different solvents. It is obtained by the processing terminal by looking up the material coefficient values ​​in a mapping table. By identifying and calling the material coefficient, it can be determined that the larger the material coefficient, the higher the tolerance of the ion source component to solvents, providing data support for subsequent calculation of the baseline removal rate.

[0119] Step S206: Determine the ultrasonic power based on the ultrasonic cleaning parameters.

[0120] Ultrasonic power refers to the power of the ultrasonic cleaner during cleaning, which is identified and called by the processing terminal from the ultrasonic cleaning parameters. When the ultrasonic power is high, the cleaning efficiency is high, thus providing data support for determining the benchmark cleaning rate.

[0121] Step S207: Analyze the material coefficient, actual peeling difficulty coefficient, ultrasonic power, solvent type and preset benchmark difficulty coefficient to determine the benchmark removal rate of impurities.

[0122] The baseline removal rate refers to the amount of impurities that can be effectively removed from the ion source component per unit time. It is obtained by analyzing the material coefficient, actual peeling difficulty coefficient, ultrasonic power, solvent type, and baseline difficulty coefficient at the processing terminal. Specific methods are detailed in [reference needed]. Figure 3 The steps are as follows. By analyzing the baseline clearance rate, it can be determined that the higher the baseline clearance rate, the shorter the cleaning time, thereby ensuring the accuracy of the ion source cleaning time.

[0123] Step S208: Analyze the initial impurity content, actual peeling difficulty coefficient, benchmark difficulty coefficient, material coefficient, ultrasonic power, and benchmark removal rate to determine the ion source cleaning time.

[0124] After determining the baseline removal rate, the processing terminal analyzes the initial impurity content, actual stripping difficulty coefficient, baseline difficulty coefficient, material coefficient, ultrasonic power, and baseline removal rate to obtain the ion source cleaning time. The specific method is described in [reference needed]. Figure 4 The steps are as follows. By calculating the ion source cleaning time, insufficient cleaning due to short cleaning time can be avoided, while damage to the ion source components due to long cleaning time can be prevented, thus ensuring a good cleaning effect of the ion source.

[0125] Reference Figure 3 The steps for determining the baseline removal rate of impurities include analyzing the material coefficient, actual peeling difficulty coefficient, ultrasonic power, solvent type, and preset baseline difficulty coefficient.

[0126] Step S300: Analyze the actual stripping difficulty coefficient and the baseline difficulty coefficient to determine the difficulty attenuation factor.

[0127] The difficulty attenuation factor refers to the parameter that affects the ultrasonic cleaning efficiency by the difference between the actual peeling difficulty coefficient of impurities on the ion source surface and the benchmark difficulty coefficient. It is obtained by the processing terminal after analyzing and calculating the actual peeling difficulty coefficient and the benchmark difficulty coefficient, and can be expressed as follows: ,in As the baseline difficulty level, The actual difficulty level of the stripping process. As a difficulty attenuation factor, analysis can determine that the greater the actual stripping difficulty coefficient, the smaller the difficulty attenuation factor, and the lower the removal efficiency, thus providing data support for subsequent calculation of the baseline removal rate.

[0128] Step S301: Analyze the ultrasonic power and the preset reference power to determine the power influence factor.

[0129] Among them, the power influence factor refers to the coefficient by which ultrasonic power improves or reduces clearance efficiency relative to the reference power. It is obtained by the processing terminal through analysis and calculation of ultrasonic power and reference power, and can be expressed as follows: ,in For ultrasonic power, As the reference power, This refers to the power influence factor. By calculating the power influence factor, it can be determined that the higher the ultrasonic power, the larger the power influence factor, and thus the greater the impact on the clearance efficiency, thereby providing data support for subsequent calculations of the baseline clearance rate.

[0130] Step S302: Determine the solvent compatibility coefficient based on the correspondence between solvent type and preset impurity removal compatibility level.

[0131] The impurity removal suitability level correspondence refers to the correspondence between solvent type and impurity removal suitability. For example, the impurity removal suitability level of deionized water is 1.0, and the impurity removal suitability level of 5% nitric acid solution is 1.8. Operators will form a mapping table by matching solvent type with impurity removal suitability level.

[0132] The solvent compatibility coefficient refers to the ability of the current solvent to remove target impurities. It is obtained by the processing terminal by looking up the corresponding mapping table of impurity removal compatibility levels according to the solvent type. By analyzing the solvent compatibility coefficient, it can be determined that the larger the solvent compatibility coefficient value, the stronger the compatibility, thus the better the impurity removal effect, and thus providing data support for subsequent calculation of the baseline removal rate.

[0133] Step S303: Analyze the material coefficient, actual peeling difficulty coefficient, difficulty attenuation factor, ultrasonic power, power influence factor and solvent compatibility coefficient to determine the benchmark removal rate of impurities.

[0134] Among them, after obtaining the solvent compatibility coefficient through terminal analysis, the baseline impurity removal rate is obtained by calculating the material coefficient, actual peeling difficulty coefficient, difficulty attenuation factor, ultrasonic power, power influence factor, and solvent compatibility coefficient, which can be expressed as: ,in, Indicates the material coefficient. Indicates ultrasonic power. Indicates the power influence factor. This indicates the actual difficulty level of the stripping process. This represents the difficulty decay factor. This represents the solvent compatibility factor. By calculating the baseline removal rate of impurities, the shortest effective time required to remove a specific amount of impurities can be determined, thereby ensuring the accuracy of the ion source cleaning time.

[0135] Reference Figure 4 The steps for determining the ion source cleaning time include analyzing the initial impurity content, actual peeling difficulty coefficient, baseline difficulty coefficient, material coefficient, ultrasonic power, and baseline removal rate.

[0136] Step S400: Analyze the initial impurity content and baseline removal rate to determine the impurity cleaning time.

[0137] Here, the impurity cleaning time refers to the cleaning time for different types of impurities, which is calculated by the processing terminal based on the initial impurity content and the baseline removal rate, and can be expressed as follows: ,in, Indicates the time for impurity cleaning. This represents the initial content of impurities. The baseline removal rate is used as the benchmark. By calculating the impurity cleaning time, it can be determined that the higher the baseline removal rate, the shorter the impurity cleaning time, providing data support for subsequently determining the ion source cleaning time.

[0138] Step S401: Analyze the preset safe time reference constant, ultrasonic power and material coefficient to determine the maximum safe cleaning time of the ion source component.

[0139] The safety time reference constant refers to the reference cleaning time calibrated before the equipment leaves the factory to ensure that the components are not damaged by ultrasonic waves. This can be found in the paper manual provided by the equipment manufacturer.

[0140] The maximum safe cleaning time refers to the upper limit of the longest permissible ultrasonic cleaning time set under the dual constraints of ultrasonic power and ion source material characteristics to avoid irreversible damage to ion source components due to prolonged ultrasonic vibration or solvent corrosion. It is obtained by analyzing the safe time reference constant, ultrasonic power, and material coefficients at the processing terminal, and can be expressed as follows: ,in Represents the safety time reference constant. Indicates the material coefficient. Indicates ultrasonic power. This indicates the maximum safe cleaning time. By calculating the maximum safe cleaning time, it can be determined that the higher the ultrasonic power, the shorter the maximum safe cleaning time; and the stronger the material's resistance, the longer the maximum safe cleaning time, thus ensuring that the ion source components are not damaged during the cleaning process.

[0141] Step S402: Determine whether the actual stripping difficulty coefficient is not greater than the benchmark difficulty coefficient.

[0142] Specifically, the actual stripping difficulty coefficient is determined by the processing terminal to determine whether it is not greater than the benchmark difficulty coefficient, thereby determining the cleaning stage of the impurities, and then analyzing the cleaning time of different cleaning stages.

[0143] Step S4021: If the difficulty coefficient is not greater than the baseline, the corresponding impurity cleaning time is defined as the rough cleaning stage time.

[0144] If the actual stripping difficulty coefficient is not greater than the benchmark difficulty coefficient, it indicates that the impurity is a low-difficulty loose impurity. Therefore, its cleaning time can be defined as the coarse cleaning stage time, providing data support for the subsequent determination of the ion source cleaning time.

[0145] The rough cleaning stage time refers to the time required to remove different types of loose impurities of low difficulty from the surface of the ion source. It is determined by classifying the impurity cleaning time at the processing terminal.

[0146] Step S40211: Analyze the coarse washing stage time and the maximum safe washing time to determine the coarse washing time.

[0147] In this process, after determining the time for the coarse washing stage, the processing terminal compares the coarse washing stage time with the maximum safe washing time and takes the minimum value as the coarse washing time.

[0148] The coarse cleaning time refers to the time required to remove loose, low-difficulty impurities from the surface of the ion source. It is obtained by analyzing the coarse cleaning stage time and the maximum safe cleaning time at the processing terminal. By calculating the coarse cleaning time, it is possible to accurately remove loose, low-difficulty impurities from the surface of the ion source components without damaging them.

[0149] Step S4022: If the difficulty coefficient is greater than the baseline, the corresponding impurity cleaning time is defined as the fine cleaning stage time.

[0150] If the actual stripping difficulty coefficient is greater than the benchmark difficulty coefficient, it indicates that the impurity is a highly difficult and stubborn impurity. Therefore, its cleaning time can be defined as the fine cleaning stage time, providing data support for the subsequent determination of the ion source cleaning time.

[0151] The time for the fine cleaning stage refers to the time required to remove different types of stubborn impurities from the surface of the ion source. This time is determined by classifying the impurity cleaning time at the processing terminal.

[0152] Step S40221: Analyze the fine cleaning stage time and the maximum safe cleaning time to determine the fine cleaning time.

[0153] In this process, after determining the time for the fine cleaning stage, the processing terminal compares the fine cleaning stage time with the maximum safe cleaning time and takes the minimum value as the fine cleaning time.

[0154] The fine cleaning time refers to the time required to remove stubborn impurities from the surface of the ion source. It is obtained by analyzing the fine cleaning stage time and the maximum safe cleaning time at the processing terminal. By calculating the fine cleaning time, it is possible to accurately remove stubborn impurities from the surface of the ion source components without damaging them.

[0155] Step S403: Correlate the coarse wash time and fine wash time to generate the ion source cleaning time.

[0156] After determining the coarse cleaning time and the fine cleaning time, the processing terminal adds the coarse cleaning time and the fine cleaning time to obtain the ion source cleaning time, which provides data support for the subsequent processing terminal to control the ultrasonic cleaner to clean the ion source components.

[0157] Reference Figure 5 The steps for analyzing the size parameters of the cleaning fluid container, the height of the cleaning fluid, the size parameters of the ion source components, and the impurity detection parameters to determine the motion parameters of the ion source components include:

[0158] Step S500: Obtain the ion source component type.

[0159] The ion source component type refers to the shape of the ion source component, including elongated, cavity, and orifice types. Elongated types include spray needles and discharge needles; cavity types include collision reaction chambers and sample target chambers; and orifice types include sampling cone holes and truncating cone holes. This is determined by the operator's observation. By obtaining the ion source component type, the areas prone to fouling can be identified, facilitating the subsequent determination of the ion source component's cleaning posture.

[0160] Step S501: Determine the cleaning posture according to the ion source component type and the preset component posture correspondence.

[0161] Among them, the component orientation correspondence refers to the correspondence between the ion source component type and the component orientation. For example, the component orientation corresponding to the slender component is horizontal, and the component orientation corresponding to the hole-shaped component is vertical. The operator forms a mapping table by matching the ion source component type and component orientation one by one.

[0162] The cleaning posture refers to the attitude maintained by the ion source component during its movement in the cleaning process. It is obtained by the processing terminal based on a mapping table that corresponds to the ion source component type and its posture. By identifying and calling the cleaning posture, the posture of the ion source component during the cleaning process can be kept in a position conducive to impurity removal, thereby preventing impurities from re-entering the cavity of the ion source component during cleaning and causing them to remain unremoved.

[0163] Step S502: Analyze the size parameters of the cleaning fluid container, the height of the cleaning fluid, the cleaning posture, and the size parameters of the ion source component to determine the bottom movement path, the middle movement path, and the top movement path.

[0164] The bottom movement path refers to the ion source component performing a serpentine movement starting from the bottom of the cleaning fluid container on one side of the container wall. This movement consists of multiple single paths and a fixed rising height, forming a closed-loop trajectory. The horizontal movement distance of each single path is determined based on the size parameters of the cleaning fluid container. The size parameters of the ion source component are then converted into actual size parameters under the cleaning posture. Half of the height in the actual size parameters is taken as the rising height for each path switch. At the same time, the total height of the rising action is limited according to the height of the cleaning fluid, thereby ensuring that the ion source component is always completely immersed in the cleaning fluid throughout the entire movement.

[0165] The middle movement path refers to the horizontal reciprocating motion of the ion source component from the midpoint of the cleaning liquid height on one side of the container wall to the other side, with the horizontal movement distance determined according to the size parameters of the cleaning liquid container.

[0166] The top movement path refers to the ion source component performing a serpentine movement starting from the highest point of the cleaning liquid on one side of the container wall. This movement consists of multiple single paths and a fixed descent height, forming a closed-loop trajectory. The horizontal movement distance of each single path is determined based on the size parameters of the cleaning liquid container. The size parameters of the ion source component are then converted into actual size parameters under the cleaning posture. Half of the height in the actual size parameters is taken as the descent height for each path switch. At the same time, the total descent height is limited according to the height of the cleaning liquid, so that the ion source component does not collide with the bottom of the cleaning liquid container during the descent.

[0167] By defining the bottom, middle, and top movement paths, the ion source components can be kept in motion throughout the cleaning process, thus preventing the re-adhesion of detached impurities due to the ion source components being stationary.

[0168] Step S503: Determine the impurity density based on the impurity detection parameters and obtain the cleaning solution density.

[0169] Among them, impurity density refers to the mass per unit volume of impurities on the surface of the ion source component, which is identified and retrieved by the processing terminal from the impurity detection parameters.

[0170] The density of the cleaning fluid refers to the mass per unit volume of the solvent used in ultrasonic cleaning, which is obtained by the operator by consulting a material density manual.

[0171] By analyzing the impurity density and cleaning fluid density, the direction of movement of the impurities after stripping can be determined, thus providing data support for the motion parameters of subsequent ion source components.

[0172] Step S504: Analyze the impurity density, cleaning fluid density, cleaning posture, bottom movement path, middle movement path, and top movement path to determine the motion parameters of the ion source component.

[0173] After determining the impurity density and cleaning fluid density, the processing terminal analyzes the impurity density, cleaning fluid density, cleaning posture, bottom movement path, middle movement path, and top movement path to determine the motion parameters of the ion source components. The specific method is described in [reference needed]. Figure 6 The steps involve determining the motion parameters of the ion source components to ensure that they remain away from the impurities removed during the cleaning process, thus preventing impurities from re-adhering to the ion source components.

[0174] Reference Figure 6 The steps for determining the motion parameters of the ion source components by analyzing impurity density, cleaning fluid density, cleaning posture, bottom movement path, middle movement path, and top movement path include:

[0175] Step S600: Analyze the density of impurities and the density of cleaning solution to determine the density comparison results.

[0176] The processing terminal compares the impurity density with the cleaning fluid density to determine the movement direction of the stripped impurities. This allows the ion source component to be associated with a movement path opposite to its movement direction, facilitating subsequent analysis of the ion source component's motion parameters.

[0177] The density comparison result refers to the comparison between the impurity density and the cleaning fluid density, including the low-density impurity result, the high-density impurity result, and the mixed density result, which is obtained by the processing terminal comparing the impurity density and the cleaning fluid density.

[0178] Step S601: Determine whether the density comparison result is the preset low impurity density result, the preset high impurity density result, or the preset mixed density result.

[0179] Among them, the low-density impurity result refers to the result where the impurity density is less than the cleaning fluid density, and is stored by the operator at the processing terminal.

[0180] High-density impurity results refer to results where the impurity density is greater than the cleaning fluid density, and are stored by the operator at the processing terminal.

[0181] The mixed density result refers to the simultaneous presence of impurity densities that are less than the cleaning fluid density and impurity densities that are greater than the cleaning fluid density, and is stored by the operator at the processing terminal.

[0182] By judging the density comparison results, the direction of movement of the stripped impurities can be determined, thereby determining the movement path of the ion source component, so as to facilitate the subsequent generation of the ion source component's motion parameters.

[0183] Step S6011: If the result is a low density of impurities, then associate the top moving path and the cleaning posture to generate motion parameters of the ion source component.

[0184] If the result is a low-density impurity, it indicates that the impurity density is less than the cleaning fluid density. In this case, the impurities peeled off from the surface of the ion source component will float to the surface. This shows that the lower the height, the less impurity content. Therefore, it is necessary to associate the top moving path and lower the ion source component by 1 / 2 of its height after it reaches the other side of the container wall. This can effectively prevent the peeled impurities from re-attaching to the ion source component. After the processing terminal associates the top moving path and the cleaning posture, it obtains the motion parameters of the ion source component when the result is a low-density impurity, so as to facilitate the subsequent control of the ion source component's motion.

[0185] Step S6012: If the result is a high density of impurities, then associate the bottom movement path and the cleaning posture to generate motion parameters of the ion source component.

[0186] If the result is a high-density impurity, it indicates that the impurity density is greater than the cleaning solution density. In this case, the impurities peeled off from the ion source surface will sink. This means that the higher the height, the less impurity content. Therefore, it is necessary to associate the bottom movement path and raise the ion source component by 1 / 2 of its height after it reaches the other side of the container wall. This can effectively prevent the peeled impurities from re-attaching to the ion source component. After the processing terminal associates the bottom movement path and the cleaning posture, it obtains the motion parameters of the ion source component when the result is a high-density impurity, so as to facilitate the subsequent control of the ion source component's movement.

[0187] Step S6013: If the result is a mixed density, analyze the impurity detection parameters, ion source component size parameters, cleaning posture, central movement path and cleaning fluid density to generate ion source component motion parameters.

[0188] If the result is a mixed density, it indicates that both impurity densities are less than and greater than the cleaning solution density. In this case, impurities detached from the ion source surface will simultaneously rise and sink. This suggests that the impurity content at the midpoint of the cleaning solution height will decrease over time. Therefore, it is necessary to correlate the midpoint movement path, ensuring the ion source component remains at a constant height and waits for a certain period after reaching the other container wall. The processing terminal analyzes the impurity detection parameters, ion source component size parameters, cleaning posture, midpoint movement path, and cleaning solution density to obtain the ion source component motion parameters when the mixed density result is obtained. This facilitates subsequent control of the ion source component movement. Specific methods are described in [reference needed]. Figure 7 The steps.

[0189] Reference Figure 7 The steps for generating motion parameters of the ion source components by analyzing impurity detection parameters, ion source component size parameters, cleaning posture, central movement path, and cleaning fluid density include:

[0190] Step S700: Determine the average particle size of impurities based on impurity detection parameters and obtain the dynamic viscosity of the cleaning fluid.

[0191] Among them, the average particle size of impurities refers to the volume-weighted average diameter of various impurities attached to the surface of the ion source, which is identified and retrieved by the processing terminal from the impurity detection parameters.

[0192] Dynamic viscosity of cleaning fluid refers to a physical quantity that measures the fluid's ability to resist flow deformation, and is measured by the operator using a rotational viscometer.

[0193] By analyzing the average particle size of impurities and the dynamic viscosity of the cleaning fluid, it can be determined that the larger the average particle size of impurities, the greater the impurity movement speed, while the greater the dynamic viscosity of the cleaning fluid, the smaller the impurity movement speed. This provides data support for subsequent calculations of impurity movement speed.

[0194] Step S701: Analyze the average particle size of the impurities, the density of the impurities, the density of the cleaning solution, and the dynamic viscosity of the cleaning solution to determine the movement speed of the impurities.

[0195] After obtaining the average particle size of the impurities and the dynamic viscosity of the cleaning fluid, the processing terminal calculates the impurity movement velocity based on the average particle size, impurity density, cleaning fluid density, and cleaning fluid dynamic viscosity, which can be expressed as follows: ,in The average particle size of the impurities is It is the acceleration due to gravity. For impurity density, The density of the cleaning fluid, The dynamic viscosity of the cleaning fluid. The velocity of the impurities is calculated. By calculating the velocity of the impurities, data is provided to support the subsequent determination of the directional rotation waiting time, thereby ensuring that the ion source components and impurities always maintain a safe distance.

[0196] Step S702: Analyze the cleaning posture and ion source component size parameters to determine the height of the ion source component.

[0197] Among them, the height of the ion source component refers to the vertical height of the ion source component in the cleaning posture. The processing terminal identifies and converts the ion source component size parameters according to the cleaning posture to determine the safe distance that the ion source component must maintain from the impurities, thereby providing data support for determining the direction rotation waiting time.

[0198] Step S703: Analyze the height of the ion source component and the speed of impurity movement to determine the directional rotation waiting time.

[0199] After determining the height of the ion source component, the processing terminal calculates the directional rotation waiting time based on the ion source component height and the impurity movement speed, which can be expressed as: ,in The height of the ion source component, The velocity of the impurities. The directional rotation waiting time is calculated by taking half the height of the ion source component as the safe distance between the ion source component and the impurity, thereby determining the distance at which the impurity needs to float or sink, and thus obtaining the directional rotation waiting time.

[0200] The directional rotation waiting time refers to the time that the ion source component waits after reaching the other side of the container wall, in order to prevent it from immediately returning and generating eddies that would cause impurities to re-adhere to the surface of the ion source component.

[0201] Step S704: Associate the cleaning posture, central movement path, and directional rotation waiting time to generate motion parameters for the ion source components.

[0202] After confirming the directional rotation waiting time, the processing terminal generates motion parameters for the ion source component by associating the cleaning posture, the central movement path, and the directional rotation waiting time, so that the processing terminal can control the motion of the ion source component.

[0203] Based on the same inventive concept, embodiments of this application provide a mass spectrometer ion source cleaning system, including:

[0204] The acquisition module is used to acquire impurity detection parameters, ultrasonic cleaning parameters, cleaning fluid container size parameters, cleaning fluid height, ion source component size parameters, ion source component material, ion source component type, cleaning fluid density, and cleaning fluid dynamic viscosity.

[0205] A memory for storing a program for cleaning a mass spectrometer ion source;

[0206] The processor can load and execute programs in memory to implement a method for cleaning ion sources for mass spectrometers.

[0207] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional modules is used as an example. In practical applications, the above functions can be assigned to different functional modules as needed, that is, the internal structure of the device can be divided into different functional modules to complete all or part of the functions described above. The specific working process of the system, device, and unit described above can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0208] This application provides a computer-readable storage medium storing a computer program that can be loaded by a processor and executed as a method for cleaning a mass spectrometer ion source.

[0209] Computer storage media include, for example, USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, optical disks, and other media that can store program code.

[0210] Based on the same inventive concept, embodiments of this application provide a smart terminal, including a memory and a processor, wherein the memory stores a computer program that can be loaded and executed by the processor to perform a method for cleaning a mass spectrometer ion source.

[0211] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional modules is used as an example. In practical applications, the above functions can be assigned to different functional modules as needed, that is, the internal structure of the device can be divided into different functional modules to complete all or part of the functions described above. The specific working process of the system, device, and unit described above can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0212] The above are all preferred embodiments of this application and are not intended to limit the scope of protection of this application. Any feature disclosed in this specification (including the abstract and drawings) may be replaced by other equivalent or similar features unless specifically stated otherwise. That is, unless specifically stated otherwise, each feature is only one example of a series of equivalent or similar features.

Claims

1. A method for cleaning an ion source for a mass spectrometer, characterized in that, include: Obtain the impurity detection parameters and ultrasonic cleaning parameters of the preset ion source components; The impurity detection parameters and ultrasonic cleaning parameters were analyzed to determine the ion source cleaning time; Obtain the dimensions of the cleaning fluid container, the height of the cleaning fluid, and the dimensions of the ion source components; The dimensions of the cleaning fluid container, the height of the cleaning fluid, the dimensions of the ion source components, and the impurity detection parameters were analyzed to determine the motion parameters of the ion source components. The ultrasonic cleaner is controlled according to the ion source cleaning time and the motion parameters of the ion source components to clean the ion source components. The steps for analyzing the dimensional parameters of the cleaning fluid container, the cleaning fluid height, the dimensional parameters of the ion source components, and the impurity detection parameters to determine the motion parameters of the ion source components include: Obtain the type of ion source component; The cleaning posture is determined based on the type of ion source component and the preset correspondence between component postures; The dimensions of the cleaning fluid container, the height of the cleaning fluid, the cleaning posture, and the dimensions of the ion source component are analyzed to determine the bottom, middle, and top movement paths. The bottom movement path refers to the ion source component performing a serpentine motion starting from the bottom of the cleaning fluid container on one side of the container wall, forming a closed loop trajectory by alternating multiple single paths and a fixed upward height. The middle movement path refers to the ion source component performing a horizontal reciprocating motion from the midpoint of the cleaning fluid height on one side of the container wall to the other side. The top movement path refers to the ion source component performing a serpentine motion starting from the highest point of the cleaning fluid height on one side of the container wall, forming a closed loop trajectory by alternating multiple single paths and a fixed downward height. The impurity density is determined based on the impurity detection parameters, and the cleaning fluid density is obtained. The impurity density, cleaning fluid density, cleaning posture, bottom movement path, middle movement path, and top movement path were analyzed to determine the motion parameters of the ion source components. The steps for analyzing impurity density, cleaning fluid density, cleaning posture, bottom movement path, middle movement path, and top movement path to determine the motion parameters of the ion source components include: The density of impurities and the density of the cleaning solution were analyzed to determine the density comparison results; The density comparison result is determined to be either the preset low-density impurity result, the preset high-density impurity result, or the preset mixed density result. If the result is a low-density impurity, then the top movement path and cleaning posture are correlated to generate motion parameters for the ion source components; If the result is a high density of impurities, then the bottom movement path and cleaning posture are correlated to generate motion parameters of the ion source component; If the result is a mixture density, the impurity detection parameters, ion source component size parameters, cleaning posture, central movement path, and cleaning fluid density are analyzed to generate ion source component motion parameters.

2. The method for cleaning an ion source for a mass spectrometer according to claim 1, characterized in that, The steps for analyzing impurity detection parameters and ultrasonic cleaning parameters to determine the ion source cleaning time include: The impurity type and initial impurity content are determined based on the impurity detection parameters; The solvent type is determined based on the impurity type and the preset impurity solvent correspondence; The basic stripping difficulty coefficient is determined based on the correspondence between impurity type and preset impurity stripping difficulty. The basic stripping difficulty coefficient is adjusted based on the initial impurity content to generate the actual stripping difficulty coefficient. Obtain the material of the ion source components; The material coefficient is determined based on the correspondence between the material of the ion source component and the preset material coefficient value; Determine the ultrasonic power based on the ultrasonic cleaning parameters; The material coefficient, actual peeling difficulty coefficient, ultrasonic power, solvent type, and preset benchmark difficulty coefficient are analyzed to determine the benchmark removal rate of impurities. The initial impurity content, actual stripping difficulty coefficient, baseline difficulty coefficient, material coefficient, ultrasonic power, and baseline removal rate were analyzed to determine the ion source cleaning time.

3. The method for cleaning a mass spectrometer ion source according to claim 2, characterized in that, The steps for determining the baseline impurity removal rate by analyzing the material coefficient, actual peeling difficulty coefficient, ultrasonic power, solvent type, and preset baseline difficulty coefficient include: The actual stripping difficulty coefficient and the benchmark difficulty coefficient are analyzed to determine the difficulty attenuation factor; The ultrasonic power and the preset reference power are analyzed to determine the power influence factor; The solvent compatibility coefficient is determined based on the correspondence between solvent type and preset impurity removal compatibility level. The material coefficient, actual peeling difficulty coefficient, difficulty attenuation factor, ultrasonic power, power influence factor and solvent compatibility coefficient were analyzed to determine the benchmark removal rate of impurities.

4. The method for cleaning an ion source for a mass spectrometer according to claim 2, characterized in that, The steps for determining the ion source cleaning time include analyzing the initial impurity content, actual peeling difficulty coefficient, baseline difficulty coefficient, material coefficient, ultrasonic power, and baseline removal rate. The initial impurity content and baseline removal rate were analyzed to determine the impurity cleaning time; The preset safe time reference constant, ultrasonic power, and material coefficient were analyzed to determine the maximum safe cleaning time for the ion source components. Determine whether the actual stripping difficulty coefficient is not greater than the benchmark difficulty coefficient; If the difficulty coefficient is not greater than the baseline, the corresponding impurity cleaning time is defined as the rough cleaning stage time. The time of the rough washing stage and the maximum safe washing time were analyzed to determine the rough washing time; If the difficulty coefficient is greater than the baseline, the corresponding impurity cleaning time will be defined as the fine cleaning stage time. The fine cleaning stage time and the maximum safe cleaning time were analyzed to determine the fine cleaning time; Correlate the coarse wash time and fine wash time to generate the ion source cleaning time.

5. The method for cleaning an ion source for a mass spectrometer according to claim 1, characterized in that, The steps for generating motion parameters of the ion source components by analyzing impurity detection parameters, ion source component size parameters, cleaning posture, central movement path, and cleaning fluid density include: The average particle size of impurities is determined based on the impurity detection parameters, and the dynamic viscosity of the cleaning fluid is obtained. The average particle size of impurities, impurity density, cleaning fluid density, and cleaning fluid dynamic viscosity were analyzed to determine the impurity movement velocity. The cleaning posture and ion source component size parameters were analyzed to determine the height of the ion source component; The height of the ion source components and the speed of impurity movement are analyzed to determine the directional rotation waiting time; The cleaning posture, central movement path, and directional rotation waiting time are correlated to generate motion parameters for the ion source components.

6. A mass spectrometer ion source cleaning system, characterized in that, include: The acquisition module is used to acquire impurity detection parameters, ultrasonic cleaning parameters, cleaning fluid container size parameters, cleaning fluid height, and ion source component size parameters; A memory for storing a program for cleaning a mass spectrometer ion source as described in any one of claims 1 to 5; The processor and the program in the memory can be loaded and executed by the processor to implement the mass spectrometer ion source cleaning method as described in any one of claims 1 to 5.

7. A smart terminal, characterized in that, It includes a memory and a processor, wherein the memory stores a computer program that can be loaded by the processor and executed as described in any one of claims 1 to 5 for cleaning a mass spectrometer ion source.

8. A computer-readable storage medium, characterized in that, The device stores a computer program capable of being loaded by a processor and executing a mass spectrometer ion source cleaning method as described in any one of claims 1 to 5.

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