Controllable sensing device and method

Abstract

The invention provides a controllable sensing device. The controllable sensing device comprises a reaction end; the control transistor comprises a control end configured to receive a control signal, a first conductive end and a second conductive end; the sensing transistor comprises a sensing grid electrode, a sensing source electrode and a sensing leak electrode; the reading end is configured to be electrically connected to one of the sensing source electrode and the sensing leak electrode of the sensing transistor; wherein the reaction terminal is electrically connected to one of the first conductive terminal and the second conductive terminal, and wherein the sensing gate is electrically connected to the other of the first conductive terminal and the second conductive terminal.

Description

Technical Field

[0001] This disclosure relates to a controllable sensing device and method, and more particularly to a controllable sensing device and method that uses a control transistor as a switch for an EGFET. Background Technology

[0002] Sensing devices used for sensing and measuring various chemical and biological reactions and identification are widely used in the chemical and biological fields.

[0003] One sensing device is a field-effect transistor (FET), a powerful biosensor with excellent sensitivity and specificity, and advantages such as low cost, real-time processing, and label-free operation in biosensing applications. By modifying the FET surface with probes containing detection targets such as nucleic acids and proteins, the sensing device can directly convert the target signal on the FET surface into an electronic signal.

[0004] One type of FET used for biosensing is the ion-sensitive field-effect transistor, often referred to as ISFET in related literature. An ISFET is an impedance switching device that operates similarly to a metal-oxide-semiconductor field-effect transistor (MOSFET) and is specifically configured to selectively measure ion activity in solution.

[0005] Similar to the operation of MOSFETs, ISFETs operate based on charge concentration modulation (channel conductance) formed by the MOS capacitance created by the polysilicon gate, gate oxide, and well regions (e.g., N-type wells) between the source and drain. For example, when a negative voltage is applied between the gate and source regions, a channel is formed at the interface between the region and the gate oxide by depleting electrons in this region.

[0006] Another type of sensing device, such as the extended-gate field-effect transistor (EGFET), is based on the ISFET. It uses a metal wire (or other material with conductive properties) to connect the extended gate to the gate of the MOSFET to achieve the connection between the sensing area and the gate of the MOSFET (or ISFET).

[0007] The primary application of EGFETs is to detect ionic substances, pH values, and especially biomolecules such as antigens, cells, nucleic acids, and proteins by processing the sensing surface in the sensing region that contacts the extended gate of the EGFET. Biomolecular / ionic sensing can be achieved by combining EGFETs with other biomolecular / ionic sensing elements or materials. Summary of the Invention

[0008] However, due to the high sensitivity of the FET itself, the gate voltage can affect the output signal of the FET, which can be used to sense low concentrations of biomolecules / ions. If the gate is affected by external noise during the measurement process, it will immediately cause a change in the FET output signal, resulting in FET output signal recognition drift and thus misjudgment.

[0009] When a FET is combined with an EG, the sensitivity increases due to the larger surface area (sensing area). However, when detecting low concentrations of biomolecules / ions, it becomes more susceptible to noise. Therefore, it is necessary to implement controllable means for the sensing device to avoid noise interference during measurement. Furthermore, since biological or chemical reactions may change over time, the measurement time must be controlled to achieve high-sensitivity sensing.

[0010] In order to effectively block noise interference during non-sensing periods and effectively control the sensing time window of biosensing, this disclosure provides a controllable sensing device and method.

[0011] One object of this disclosure is to provide a controllable sensing device. The controllable sensing device includes: a reactive terminal; a control transistor including: a control terminal configured to receive a control signal, a first conductive terminal, and a second conductive terminal; a sensing transistor including: a sensing gate, a sensing source, and a sensing drain; and a readout terminal configured to be electrically connected to one of the sensing source and sensing drain of the sensing transistor; wherein the reactive terminal is electrically connected to one of the first conductive terminal and the second conductive terminal, and wherein the sensing gate is electrically connected to the other of the first conductive terminal and the second conductive terminal.

[0012] In one embodiment, the magnitude of the control signal is variable.

[0013] In one embodiment, the conductivity of the control transistor is variable depending on the magnitude of the control signal.

[0014] In one embodiment, the duration of the control signal is variable.

[0015] In one embodiment, the period during which the control transistor is turned on is variable depending on the period of the control signal.

[0016] In one embodiment, the second conductive terminal is directly electrically connected to the sensing gate.

[0017] In one embodiment, the control transistor is a metal-oxide-semiconductor field-effect transistor (MOSFET), wherein the control terminal is the gate, the first conductive terminal is one of the source and drain of the MOSFET, and the second conductive terminal is the other of the source and drain of the MOSFET.

[0018] In one embodiment, the sensing transistor is an extended gate field-effect transistor (EGFET).

[0019] In one embodiment, the reaction end is configured to be connected to the sample reaction region used for ion sensing.

[0020] In one embodiment, the controllable sensing device further includes a capacitor electrically connected to the sensing gate and in parallel with the sensing transistor.

[0021] In one embodiment, the sensing transistor is an N-MOSFET; the sensing transistor is an N-MOSFET; and the readout terminal is electrically connected to the sensing drain.

[0022] In one embodiment, the controllable sensing device further includes: a capacitor, one end of which is electrically connected between a sensing gate and a second conductive terminal, and the other end of which is electrically connected to a sensing source.

[0023] In one embodiment, the controllable sensing device further includes: a ground terminal electrically connected to the sensing source; and a voltage terminal electrically connected to the sensing drain.

[0024] In one embodiment, the control transistor is a P-MOSFET; the sensing transistor is an N-MOSFET; and the readout terminal is electrically connected to the sensing drain.

[0025] In one embodiment, the controllable sensing device further includes: a capacitor, one end of which is electrically connected between a sensing gate and a second conductive terminal, and the other end of which is electrically connected to a sensing source.

[0026] In one embodiment, the controllable sensing device further includes: a ground terminal electrically connected to the sensing source; and a voltage terminal electrically connected to the sensing drain.

[0027] In one embodiment, the control transistor is an N-MOSFET; the sensing transistor is a P-MOSFET; and the readout terminal is electrically connected to the sensing drain.

[0028] In one embodiment, the controllable sensing device further includes: a capacitor, one end of which is electrically connected between a sensing gate and a second conductive terminal, and the other end of which is electrically connected to a sensing source.

[0029] In one embodiment, the controllable sensing device further includes a voltage terminal electrically connected to the sensing source electrode.

[0030] In one embodiment, the control transistor is a P-MOSFET; the sensing transistor is a P-MOSFET; and the readout terminal is electrically connected to the sensing drain.

[0031] In one embodiment, the controllable sensing device further includes: a capacitor, one end of which is electrically connected between a sensing gate and a second conductive terminal, and the other end of which is electrically connected to a sensing source.

[0032] In one embodiment, the controllable sensing device further includes a voltage terminal electrically connected to the sensing source electrode.

[0033] Another object of this disclosure is to provide a controllable sensing device. The controllable sensing method includes: providing a reactive terminal; providing a control transistor including a control terminal, a first conductive terminal, and a second conductive terminal; providing a sensing transistor including a sensing gate, a sensing source, and a sensing drain; and receiving a control signal via the control terminal for switching a signal change sensed via a readout terminal, wherein the readout terminal is configured to be electrically connected to one of the sensing source and sensing drain of the sensing transistor, wherein the reactive terminal is electrically connected to one of the first conductive terminal and the second conductive terminal, and wherein the sensing gate is electrically connected to the other of the first conductive terminal and the second conductive terminal.

[0034] In one embodiment, the magnitude of the control signal is variable.

[0035] In one embodiment, the conductivity of the control transistor is variable depending on the magnitude of the control signal.

[0036] In one embodiment, the duration of the control signal is variable.

[0037] In one embodiment, the period during which the control transistor is turned on is variable depending on the period of the control signal.

[0038] In one embodiment, the second conductive terminal is directly electrically connected to the sensing gate.

[0039] In one embodiment, the control transistor is a metal-oxide-semiconductor field-effect transistor (MOSFET), wherein the control terminal is the gate, the first conductive terminal is one of the source and drain of the MOSFET, and the second conductive terminal is the other of the source and drain of the MOSFET.

[0040] In one embodiment, the sensing transistor is an extended gate field-effect transistor (EGFET).

[0041] In one embodiment, the reaction end is configured to be connected to the sample reaction region used for ion sensing.

[0042] In one embodiment, the controllable sensing method further includes providing a capacitor electrically connected to the sensing gate and in parallel with the sensing transistor.

[0043] In one embodiment, the control transistor is an N-MOSFET; the sensing transistor is an N-MOSFET; and the readout terminal is electrically connected to the sensing drain.

[0044] In one embodiment, the controllable sensing method further includes providing a capacitor, one end of which is electrically connected between a sensing gate and a second conductive terminal, and the other end of which is electrically connected to a sensing source.

[0045] In one embodiment, the controllable sensing method further includes: providing a ground terminal electrically connected to a sensing source; and providing a voltage terminal electrically connected to a sensing drain.

[0046] In one embodiment, the control transistor is a P-MOSFET; the sensing transistor is an N-MOSFET; and the readout terminal is electrically connected to the sensing drain.

[0047] In one embodiment, the controllable sensing method further includes providing a capacitor, one end of which is electrically connected between a sensing gate and a second conductive terminal, and the other end of which is electrically connected to a sensing source.

[0048] In one embodiment, the controllable sensing method further includes: providing a ground terminal electrically connected to a sensing source; and providing a voltage terminal electrically connected to a sensing drain.

[0049] In one embodiment, the control transistor is an N-MOSFET; the sensing transistor is a P-MOSFET; and the readout terminal is electrically connected to the sensing drain.

[0050] In one embodiment, the controllable sensing method further includes providing a capacitor, one end of which is electrically connected between a sensing gate and a second conductive terminal, and the other end of which is electrically connected to a sensing source.

[0051] In one embodiment, the controllable sensing method further includes providing a voltage terminal electrically connected to a sensing source.

[0052] In one embodiment, the control transistor is a P-MOSFET; the sensing transistor is a P-MOSFET; and the readout terminal is electrically connected to the sensing drain.

[0053] In one embodiment, the controllable sensing method further includes providing a capacitor, one end of which is electrically connected between a sensing gate and a second conductive terminal, and the other end of which is electrically connected to a sensing source.

[0054] In one embodiment, the controllable sensing method further includes providing a voltage terminal electrically connected to a sensing source. Attached Figure Description

[0055] Figure 1 This illustrates a controllable sensing device according to an embodiment of the present disclosure.

[0056] Figure 2 This invention discloses a controllable sensing device having a sample reaction region according to an embodiment of the present disclosure.

[0057] Figure 3 This invention discloses a controllable sensing device having capacitance according to an embodiment of the present disclosure.

[0058] Figure 4A This invention discloses a controllable sensing device having an N-type control transistor and an N-type sensing transistor according to an embodiment of the present disclosure.

[0059] Figure 4B This invention discloses a controllable sensing device having an N-type control transistor, an N-type sensing transistor, and a capacitor according to an embodiment of the present disclosure.

[0060] Figure 4C This invention discloses a controllable sensing device having an N-type control transistor and an N-type sensing transistor according to an embodiment of the present disclosure, and shows the arrangement of the ground terminal and the voltage terminal.

[0061] Figure 4D This invention discloses a controllable sensing device having an N-type control transistor, an N-type sensing transistor, and a capacitor according to an embodiment of the present disclosure, and shows the arrangement of the ground terminal and the voltage terminal.

[0062] Figure 5A This invention discloses a controllable sensing device having a P-type control transistor and an N-type sensing transistor according to an embodiment of the present disclosure.

[0063] Figure 5B This invention discloses a controllable sensing device having a P-type control transistor, an N-type sensing transistor, and a capacitor according to an embodiment of the present disclosure.

[0064] Figure 5C This invention discloses a controllable sensing device having a P-type control transistor and an N-type sensing transistor according to an embodiment of the present disclosure, and shows the arrangement of the ground terminal and the voltage terminal.

[0065] Figure 5D This invention discloses a controllable sensing device having a P-type control transistor, an N-type sensing transistor, and a capacitor according to an embodiment of the present disclosure, and shows the arrangement of the ground terminal and the voltage terminal.

[0066] Figure 6A This invention discloses a controllable sensing device having an N-type control transistor and a P-type sensing transistor according to an embodiment of the present disclosure.

[0067] Figure 6B This invention discloses a controllable sensing device having an N-type control transistor, a P-type sensing transistor, and a capacitor according to an embodiment of the present disclosure.

[0068] Figure 6C This invention discloses a controllable sensing device having an N-type control transistor and a P-type sensing transistor according to an embodiment of the present disclosure, and shows the arrangement of the voltage terminals.

[0069] Figure 6D This invention discloses a controllable sensing device having an N-type control transistor, a P-type sensing transistor, and a capacitor according to an embodiment of the present disclosure, and shows the arrangement of the voltage terminals.

[0070] Figure 7A This invention discloses a controllable sensing device having a P-type control transistor and a P-type sensing transistor according to an embodiment of the present disclosure.

[0071] Figure 7B This invention discloses a controllable sensing device having a P-type control transistor, a P-type sensing transistor, and a capacitor according to an embodiment of the present disclosure.

[0072] Figure 7C This invention discloses a controllable sensing device having a P-type control transistor and a P-type sensing transistor according to an embodiment of the present disclosure, and shows the arrangement of the voltage terminals.

[0073] Figure 7D This invention discloses a controllable sensing device having a P-type control transistor, a P-type sensing transistor, and a capacitor according to an embodiment of the present disclosure, and shows the arrangement of the voltage terminals.

[0074] Figure 8 This is a diagram showing a controllable sensing device 10 having a number of electrical nodes according to an embodiment of the present disclosure.

[0075] Figure 8A This is a graph showing the simulation results of the electrical changes of each node when the control signal is turned off and the simulated biological signal is turned off, according to an embodiment of the present disclosure.

[0076] Figure 8B This is a graph showing the simulation results of the electrical changes of each node when the control signal is turned off and the simulated biological signal is turned on, according to an embodiment of the present disclosure.

[0077] Figure 8C This is a graph showing the simulation results of the electrical changes of each node when the control signal is turned on and the simulated biological signal is turned off, according to an embodiment of the present disclosure.

[0078] Figure 8D This is a graph showing the simulation results of the electrical changes of each node when the control signal is turned on and the simulated biological signal is turned on, according to an embodiment of the present disclosure.

[0079] Figure 9 It is a graph showing the simulation results of the electrical changes of each node having a capacitor according to an embodiment of the present disclosure.

[0080] Figure 10 This is a graph showing the simulation results of the electrical changes of each node with capacitance when noise is applied, according to an embodiment of the present disclosure.

[0081] Figure 11A This is a graph showing experimental results of sensing a pH 4 standard solution using a sensing transistor without a control transistor to block noise, according to an embodiment of the present disclosure.

[0082] Figure 11B This is a graph showing experimental results of sensing a pH 4 standard solution using a sensing transistor having a control transistor to block noise, according to an embodiment of the present disclosure.

[0083] Figure 12A This is a graph showing experimental results of sensing a pH 7 standard solution using a sensing transistor without a control transistor to block noise, according to an embodiment of the present disclosure.

[0084] Figure 12B This is a graph showing experimental results of sensing a pH 7 standard solution using a sensing transistor having a control transistor to block noise, according to an embodiment of the present disclosure.

[0085] Figure 13A This is a graph showing experimental results of sensing a pH 10 standard solution using a sensing transistor without a control transistor to block noise, according to an embodiment of the present disclosure.

[0086] Figure 13BThis is a graph showing experimental results of sensing a pH 10 standard solution using a sensing transistor having a control transistor to block noise, according to an embodiment of the present disclosure. Detailed Implementation

[0087] To facilitate understanding of the purpose, features, and effects of this disclosure, embodiments and accompanying drawings are provided to describe this disclosure in detail.

[0088] To block noise interference during non-sensing periods, control the sensing time window of biosensing, and prevent noise from affecting the true sensing signal of biological samples, this disclosure provides a controllable sensing device and method that uses a control transistor as a switch between the reaction terminal of an EGFET and a sensing transistor.

[0089] Figure 1 This is a diagram showing a controllable sensing device according to an embodiment of the present disclosure. Figure 1 As shown, the controllable sensing device 10 includes a control transistor 100, a sensing transistor 200, a response terminal RT, and a readout terminal VD. Figure 2 This displays a controllable sensing device 10 having a sample reaction region SRZ according to an embodiment of the present disclosure.

[0090] The control transistor 100 includes a control terminal Ct0, a first conductive terminal Ct1, and a second conductive terminal Ct2. The control terminal Ct0 is configured to receive a control signal CTRL. The conductivity between the first conductive terminal Ct1 and the second conductive terminal Ct2 depends on the characteristics (e.g., voltage magnitude) of the control signal CTRL applied to the control terminal Ct0.

[0091] In some embodiments, the control transistor 100 is a metal-oxide-semiconductor field-effect transistor (MOSFET), wherein the control terminal Ct0 is the gate, the first conductive terminal Ct1 is one of the source and drain of the MOSFET, and the second conductive terminal Ct2 is the other of the source and drain of the MOSFET. In some embodiments, the control transistor 100 is a bipolar junction transistor (BJT), wherein the control terminal Ct0 is the base, the first conductive terminal Ct1 is one of the emitter and collector of the BJT, and the second conductive terminal Ct2 is the other of the emitter and collector of the BJT. In some embodiments, the control transistor 100 is an insulated-gate bipolar transistor (IGBT), wherein the control terminal Ct0 is the gate, the first conductive terminal Ct1 is one of the emitter and collector of the IGBT, and the second conductive terminal Ct2 is the other of the emitter and collector of the IGBT.

[0092] The sensing transistor 200 includes a sensing gate SG, a sensing source SS, and a sensing drain SD. The sensing transistor 200 is configured to change the conduction characteristics between the sensing source SS and the sensing drain SD based on the electrical change of the sensing gate SG.

[0093] In some embodiments, the sensing transistor 200 is an ion-sensitive field-effect transistor (ISFET). In some embodiments, the sensing transistor 200 is an extended-gate field-effect transistor (EGFET).

[0094] The reaction terminal RT is configured to be directly or indirectly electrically connected to a sensing region that may come into contact with a biological or chemical sample (or sensing target) solution, so as to detect changes in electrical properties while detecting the sensing target. In some embodiments, for example, the reaction terminal RT may be directly connected to an electrode, or it may be connected to a wire connected to an electrode. The reaction terminal RT is configured to be electrically connected to one of the first conductive terminal Ct1 and the second conductive terminal Ct2, and the sensing gate SG is configured to be electrically connected to the other of the first conductive terminal Ct1 and the second conductive terminal Ct2.

[0095] The readout terminal VD is configured to be electrically connected to one of the sensing source SS and sensing drain SD of the sensing transistor 200. The readout terminal VD is configured to measure minute electrical changes between the sensing source SS and sensing drain SD, for example, to measure the change in current through the sensing source SS and sensing drain SD based on the change in ion concentration sensed by the sensing gate SG.

[0096] use Figure 1 The illustrated architecture, by adding a control transistor 100 between the sensing transistor 200 and the reaction terminal RT, allows the reaction terminal RT to be electrically connected to one of the first conductive terminal Ct1 and the second conductive terminal Ct2. The conductivity between them is controlled by the control signal CTRL via the control terminal Ct0. Furthermore, the other of the first conductive terminal Ct1 and the second conductive terminal Ct2 can be electrically connected to the sensing transistor 200 to transmit a signal from the reaction terminal RT to the sensing transistor 200. Therefore, the control transistor 100 can act as a switch between the reaction terminal RT and the sensing transistor 200, and also as a switch for the sensing process of the controllable sensing device 10.

[0097] In some embodiments, the magnitude of the control signal CTRL is variable. In some embodiments, the conductivity of the control transistor 100 varies according to the magnitude of the control signal CTRL. That is, the conductivity between the first conductive terminal Ct1 and the second conductive terminal Ct2 can vary according to the magnitude of the control signal CTRL, so that the control transistor 100 behaves like an analog switch by adjusting the control signal CTRL.

[0098] In some embodiments, the duration of the control signal is variable. In some embodiments, the duration for which the control transistor is turned on varies depending on the duration of the control signal. That is, the sensing time window can be precisely controlled by adjusting the on-time of the control signal CTRL.

[0099] In some embodiments, the second conductive terminal Ct2 is directly electrically connected to the sensing gate SG, and there are no other electronic components in between. This means that there are no other electronic components connected in series between the second conductive terminal Ct2 and the sensing gate SG, but other electronic components may be connected in parallel.

[0100] Therefore, the controllable sensing device 10 can isolate the sensing gate SG of the sensing transistor 200 from the reactive terminal RT. Compared with a conventional EGFET, the controllable sensing device 10 has at least the following advantages.

[0101] Under actual biosensing conditions, some environmental factors can affect the reaction terminal RT and / or the sample reaction region SRZ, thereby causing noise. By using the controllable sensing device 10 of this disclosure, noise from the reaction terminal RT can be easily blocked by the control transistor 100. Compared with conventional EGFETs with switches, where the switch of a conventional EGFET is located at or between the drain / source of the conventional EGFET to block the current flow between the drain / source of the conventional EGFET, thereby achieving the goal of turning the entire conventional EGFET on or off. In addition, most conventional EGFET switches are located in the peripheral circuitry of the conventional EGFET to turn the conventional EGFET on / off. However, the control transistor 100 of the controllable sensing device 10 is located "within" the EGFET (between the reaction terminal RT and the sensing transistor 200) to block noise from entering the sensing gate SG of the sensing transistor 200, thereby achieving the goal of turning the input of the reaction terminal RT on / off rather than turning the entire sensing transistor 200 on / off.

[0102] In some embodiments, the controllable sensing device 10 includes a noise detection module. For example, the noise detection module is configured to immediately turn the control signal CTRL on / off via the control terminal Ct0 to control the transistor 100 to "turn on / off" once the noise detection module or other external circuitry or device for detecting noise detects noise, so as to block the influence of noise for subsequent reading and analysis of biosignals. The control signal CTRL turning the control transistor 100 on / off depends on the component characteristics of the control transistor 100.

[0103] In some embodiments, the control signal CTRL is sent by other devices, circuits, or modules. The control signal CTRL can be sent through some devices or circuits to couple to the control terminal Ct0, such as clock circuits, remote control modules, data acquisition modules, synchronization circuits, etc.

[0104] A control transistor 100 is disposed between the sensing gate SG and the reactive terminal of the sensing transistor 200. The control transistor 100 can act as a switch for the sensing target to the sensing transistor 200 when an input signal is received. Furthermore, since the magnitude and / or duration of the control signal CTRL are variable, the conduction magnitude and / or duration of the control transistor 100 can also be variable according to the control signal CTRL. Therefore, it may interact with the control transistor 100 in terms of conductivity magnitude and conduction duration, or it may be possible to control only conductivity or conduction time depending on the specific context of the sensing application. For example, specific sensing of different biomolecule detection characteristics can be achieved through sensing window control of the control transistor 100, improving detection accuracy, or it can function as an analog switch rather than a digital switch for sensing.

[0105] In some embodiments, the material of the reactive terminal RT or the material between the sensing gate SG and the reactive terminal RT can be a metal wire or other material with conductive properties, which can place the control transistor 100 between the two.

[0106] In some embodiments, the reaction end RT is configured to be connected to the sample reaction region SRZ for ion sensing, such as... Figure 2 As shown. The sample reaction region SRZ can be a sensing area suitable for ion sensing. In some embodiments, the sample reaction region SRZ can be a chamber containing a solution containing a target sample S, such as a probe, biomolecule, chemical, etc.

[0107] Figure 3 This invention discloses a controllable sensing device having capacitance according to an embodiment of the present disclosure.

[0108] In some embodiments, the controllable sensing device 10 includes a capacitor C. The capacitor C is configured to be electrically connected to the sensing gate SG and in parallel with the sensing transistor 200, such as... Figure 3 As shown.

[0109] In some embodiments, the controllable sensing device 10 further includes a plurality of capacitors C electrically connected to the sensing gate SG and connected in parallel with the sensing transistor 200.

[0110] use Figure 3In the illustrated architecture, at least one capacitor C is connected in parallel with the sensing transistor 200, and one end of the capacitor C is electrically connected to the sensing gate SG. The capacitor C provides a charge conversion function, ensuring that a stable input signal (from the reactive terminal RT via the on-state control transistor 100) is available for a period of time after the control sensor 100 is turned off. This ensures that the original signal (the input signal from the reactive terminal RT when the control transistor 100 is on) continues to be output to the sensing gate SG and sensed by the sensing transistor 200. That is, even if the control transistor 100 is turned off, at least one capacitor C can maintain the signal from the reactive terminal RT for the sensing transistor 200 for a certain period of time. In some embodiments, this period is determined by parameters of the capacitor C.

[0111] Figure 4A This invention discloses a controllable sensing device having an N-type control transistor and an N-type sensing transistor according to an embodiment of the present disclosure.

[0112] In some embodiments, the control transistor 100 is an N-MOSFET (N-Type MOSFET), and the sensing transistor 200 is an N-MOSFET (N-Type MOSFET). Accordingly, the control terminal Ct0 is the control gate CG, the first conductive terminal Ct1 is the control drain CD, and the second conductive terminal Ct2 is the control source CS. The control drain CD is electrically connected to the response terminal RT. The control gate CG is configured to receive the control signal CTRL. The control source CS is electrically connected to the sensing gate SG of the sensing transistor 200. The readout terminal VD is electrically connected to the sensing drain SD. Since both the control transistor 100 and the sensing transistor 200 are N-MOSFETs, the control base CB and the sensing base SB are connected to the ground terminal GND.

[0113] Figure 4B This invention discloses a controllable sensing device having an N-type control transistor, an N-type sensing transistor, and a capacitor according to an embodiment of the present disclosure.

[0114] In some embodiments, Figure 4A The controllable sensing device 10 shown further includes a capacitor C. One end of the capacitor C is electrically connected between the sensing gate SG and the second conductive terminal Ct2 (which is also the control source CS in this embodiment), and the other end of the capacitor C is electrically connected to the sensing source SS. In some embodiments, the controllable sensing device 10 further includes a plurality of capacitors C, which are connected in parallel between the sensing gate SG and the sensing source SS.

[0115] Figure 4C The present invention discloses a controllable sensing device having an N-type control transistor and an N-type sensing transistor, and shows the arrangement of a ground terminal and a voltage terminal according to an embodiment of the present disclosure.

[0116] In some embodiments, the controllable sensing device 10 includes a ground terminal GND electrically connected to the sensing source SS and a voltage terminal VDD electrically connected to the sensing drain SD. In some embodiments, the controllable sensing device 10 includes a resistor (not shown) disposed between the sensing drain SD and the voltage terminal VDD.

[0117] Figure 4D The present invention discloses a controllable sensing device having an N-type control transistor, an N-type sensing transistor and a capacitor, and shows the arrangement of a ground terminal and a voltage terminal according to an embodiment of the present disclosure.

[0118] In some embodiments, the controllable sensing device 10 includes at least one capacitor C, one end of which is electrically connected between the sensing gate SG and the control source CS, the other end of which is electrically connected to the sensing source SS, the ground terminal GND is electrically connected to the sensing source SS, the control base CB and the capacitor C, the voltage terminal VDD is electrically connected to the sensing drain SD, and a resistor (not shown) is disposed between the sensing drain SD and the voltage terminal VDD.

[0119] Figure 5A This invention discloses a controllable sensing device having a P-type control transistor and an N-type sensing transistor according to an embodiment of the present disclosure.

[0120] In some embodiments, the control transistor 100 is a P-MOSFET (P-Type MOSFET), and the sensing transistor 200 is an N-MOSFET (N-Type MOSFET). Therefore, the control terminal Ct0 is the control gate CG, the first conductive terminal Ct1 is the control source CS, and the second conductive terminal Ct2 is the control drain CD. The control source CS is electrically connected to the response terminal RT. The control gate CG is configured to receive the control signal CTRL. The control drain CD is electrically connected to the sensing gate SG of the sensing transistor 200. The readout terminal VD is electrically connected to the sensing drain SD. Since the control transistor 100 is a P-MOSFET, a control base CB is connected to the voltage terminal VDD.

[0121] Figure 5B This invention discloses a controllable sensing device having a P-type control transistor, an N-type sensing transistor, and a capacitor according to an embodiment of the present disclosure.

[0122] In some embodiments, Figure 4A The controllable sensing device 10 shown further includes a capacitor C. One end of the capacitor C is electrically connected between the sensing gate SG and the second conductive terminal Ct2 (which is also the control drain CD in this embodiment), and the other end of the capacitor C is electrically connected to the sensing source SS. In some embodiments, the controllable sensing device 10 further includes a plurality of capacitors C, which are connected in parallel between the sensing gate SG and the sensing source SS.

[0123] Figure 5C The present invention discloses a controllable sensing device having a P-type control transistor and an N-type sensing transistor, and shows the arrangement of a ground terminal and a voltage terminal according to an embodiment of the present disclosure.

[0124] In some embodiments, the controllable sensing device 10 includes a ground terminal GND electrically connected to the sensing source SS and a voltage terminal VDD electrically connected to the sensing drain SD. In some embodiments, the controllable sensing device 10 includes a resistor (not shown) disposed between the sensing drain SD and the voltage terminal VDD.

[0125] Figure 5D The present invention discloses a controllable sensing device having a P-type control transistor, an N-type sensing transistor and a capacitor, and shows the arrangement of a ground terminal and a voltage terminal according to an embodiment of the present disclosure.

[0126] In some embodiments, the controllable sensing device 10 includes at least one capacitor C, one end of which is electrically connected between the sensing gate SG and the control drain CD, and the other end of which is electrically connected to the sensing source SS, and includes a ground terminal GND electrically connected to the sensing source SS and the capacitor C, a voltage terminal VDD electrically connected to the sensing drain SD, and a resistor (not shown) disposed between the sensing drain SD and the voltage terminal VDD.

[0127] Figure 6A This invention discloses a controllable sensing device having an N-type control transistor and a P-type sensing transistor according to an embodiment of the present disclosure.

[0128] In some embodiments, the control transistor 100 is an N-MOSFET (N-Type MOSFET), and the sensing transistor 200 is a P-MOSFET (P-Type MOSFET). Therefore, the control terminal Ct0 is the control gate CG, the first conductive terminal Ct1 is the control drain CD, and the second conductive terminal Ct2 is the control source CS. The control drain CD is electrically connected to the response terminal RT. The control gate CG is configured to receive the control signal CTRL. The control source CS is electrically connected to the sensing gate SG of the sensing transistor 200. The readout terminal VD is electrically connected to the sensing drain SD. Since the control transistor 100 is an N-MOSFET, a control base CB is connected to the ground terminal GND.

[0129] Figure 6B This invention discloses a controllable sensing device having an N-type control transistor, a P-type sensing transistor, and a capacitor according to an embodiment of the present disclosure.

[0130] In some embodiments, Figure 6AThe controllable sensing device 10 shown further includes a capacitor C. One end of the capacitor C is electrically connected between the sensing gate SG and the second conductive terminal Ct2 (which is also the control source CS in this embodiment), and the other end of the capacitor C is electrically connected to the sensing source SS. In some embodiments, the controllable sensing device 10 further includes a plurality of capacitors C, which are connected in parallel between the sensing gate SG and the sensing source SS.

[0131] Figure 6C A controllable sensing device having an N-type control transistor and a P-type sensing transistor is shown, and the arrangement of voltage terminals according to an embodiment of the present disclosure is shown.

[0132] In some embodiments, the controllable sensing device 10 includes a voltage terminal VDD electrically connected to the sensing source SS. In some embodiments, the controllable sensing device 10 includes a resistor (not shown) disposed between the sensing source SS and the voltage terminal VDD.

[0133] Figure 6D The present invention discloses a controllable sensing device having an N-type control transistor, a P-type sensing transistor and a capacitor, and shows the arrangement of voltage terminals according to an embodiment of the present disclosure.

[0134] In some embodiments, the controllable sensing device 10 includes at least one capacitor C, one end of which is electrically connected between the sensing gate SG and the control source CS, the other end of which is electrically connected to the sensing source SS, the voltage terminal VDD is electrically connected to the sensing source SS, and a resistor (not shown) is disposed between the sensing source SS and the voltage terminal VDD.

[0135] Figure 7A This invention discloses a controllable sensing device having a P-type control transistor and a P-type sensing transistor according to an embodiment of the present disclosure.

[0136] In some embodiments, the control transistor 100 is a P-MOSFET (P-Type MOSFET), and the sensing transistor 200 is a P-MOSFET (P-Type MOSFET). Therefore, the control terminal Ct0 is the control gate CG, the first conductive terminal Ct1 is the control source CS, and the second conductive terminal Ct2 is the control drain CD. The control source CS is electrically connected to the response terminal RT. The control gate CG is configured to receive the control signal CTRL. The control drain CD is electrically connected to the sensing gate SG of the sensing transistor 200. The readout terminal VD is electrically connected to the sensing drain SD. Since the control transistor 100 is a P-MOSFET, a control base CB is connected to the voltage terminal VDD.

[0137] Figure 7B This invention discloses a controllable sensing device having a P-type control transistor, a P-type sensing transistor, and a capacitor according to an embodiment of the present disclosure.

[0138] In some embodiments, Figure 7A The controllable sensing device 10 shown further includes a capacitor C. One end of the capacitor C is electrically connected between the sensing gate SG and the second conductive terminal Ct2 (which is also the control drain CD in this embodiment), and the other end of the capacitor C is electrically connected to the sensing source SS. In some embodiments, the controllable sensing device 10 further includes a plurality of capacitors C, which are connected in parallel between the sensing gate SG and the sensing source SS.

[0139] Figure 7C A controllable sensing device having a P-type control transistor and a P-type sensing transistor is shown, and the arrangement of voltage terminals according to an embodiment of the present disclosure is shown.

[0140] In some embodiments, the controllable sensing device 10 includes a voltage terminal VDD electrically connected to the sensing source SS. In some embodiments, the controllable sensing device 10 includes a resistor (not shown) disposed between the sensing source SS and the voltage terminal VDD.

[0141] Figure 7D A controllable sensing device having a P-type control transistor, a P-type sensing transistor and a capacitor is shown, and the arrangement of voltage terminals according to an embodiment of the present disclosure is shown.

[0142] In some embodiments, the controllable sensing device 10 includes at least one capacitor C, one end of which is electrically connected between the sensing gate SG and the control drain CD, and the other end of which is electrically connected to the sensing source SS. A voltage terminal VDD is electrically connected to the sensing source SS, and a resistor (not shown) is disposed between the sensing source SS and the voltage terminal VDD.

[0143] Figure 8 This is a diagram showing a controllable sensing device 10 having a number of electrical nodes according to an embodiment of the present disclosure. Based on... Figure 3 In some embodiments, the controllable sensing device 10 includes a capacitor C connected in parallel between the sensing gate SG and the sensing source SS, and a resistor R electrically connected between the voltage terminal VDD and the readout terminal VDD, such as... Figure 8 As shown. Control transistor 100 is an N-type transistor, and sensing transistor 200 is also an N-type transistor. Node VC displays the voltage from the response terminal RT via control transistor 100, and simultaneously, the voltage of node VC is the voltage of the sensing gate SG of sensing transistor 200. The voltage of node VC affects the signal sensed by sensing transistor 200 and can be measured by readout terminal VD. The voltage of node VC can be equivalently converted by capacitor C. Readout terminal VD is electrically connected to the sensing drain SD and serves as the primary indicator of the measured signal change and as the output signal of the controllable sensing device 10.

[0144] Figures 8A to 8DIt is displayed according to Figure 8 The diagram illustrates the simulation results of the electrical changes at each node in the illustrated embodiment. I_R1 is the current through resistor R, which is equal to the current through sensing transistor 200 and can be used as the output current of the controllable sensing device 10. V_Ctrl is the voltage of the control signal CTRL, configured as a switch for control transistor 100 and controlling the conduction between the reaction terminal RT and sensing transistor 200. V_GATE is the voltage applied to the reaction terminal RT to simulate the signal changes (e.g., changes in ion concentration or other biosignals) occurring at the reaction terminal RT. V_GATE is named from the perspective of sensing transistor 200 rather than control transistor 100; therefore, V_GATE is applied to control the drain CD rather than the gate CG. V_VC is the voltage output from the reaction terminal RT via control transistor 100 and is also the voltage of the sensing gate SG. V_VD is the primary indicator for measuring the signal changes occurring at the reaction terminal RT.

[0145] Figure 8A This is a graph showing the simulation results of the electrical changes of each node when the control signal is turned off (V_Ctrl=0V) and the simulated biological signal is turned off (V_GATE=0V) according to an embodiment of the present disclosure.

[0146] like Figure 8A The simulation results shown are as follows: Figure 8A Display based on Figure 8 The simulation results of the architecture are shown below. When V_GATE=0V and V_Ctrl=0V, the changes in voltages and output current are as follows: Figure 8A As shown. Since there is no signal input from V_GATE (the simulation has no biological signals or noise from the reaction terminal RT), the main measurement parameter V_VD is not affected as expected (the NMOS characteristics of the control transistor 100 cause small changes in VC and I_R1, but their effect on V_VD is negligible).

[0147] Figure 8B This is a graph showing the simulation results of the electrical changes of each node when the control signal is turned off (V_Ctrl=0V) and the simulated biological signal is turned on (V_GATE=3V) according to an embodiment of the present disclosure.

[0148] like Figure 8B The simulation results shown are as follows: Figure 8B Display based on Figure 8 The simulation results of the architecture are shown below. When V_GATE=3V but V_Ctrl=0V, the changes in voltages and output current are as follows: Figure 8BAs shown. The input signal from V_GATE (simulated as a biosignal or noise from the reaction terminal RT) cannot pass through the control transistor 100, and the main measurement parameter V_VD is not affected as expected (the NMOS leakage current of the control transistor 100 causes very slight changes in VC and I_R1, but the effect on V_VD is negligible).

[0149] Figure 8C This is a graph showing the simulation results of the electrical changes of each node when the control signal is turned on (V_Ctrl=3V) and the simulated biological signal is turned off (V_GATE=0V) according to an embodiment of the present disclosure.

[0150] like Figure 8C The simulation results shown are as follows: Figure 8C Display based on Figure 8 The simulation results of the architecture are shown below. The changes in voltages and output current when V_GATE=0V and V_Ctrl=3V are as follows: Figure 8C As shown. The electronic channel of sensing transistor 200 (control transistor 100) is turned on, and both V_GATE and VC are 0V. The main measurement index V_VD is unaffected as expected (VC and I_R1 have very small changes, but the effect on V_VD is negligible).

[0151] Figure 8D This is a graph showing the simulation results of the electrical changes of each node when the control signal is turned on (V_Ctrl=3V) and the simulated biological signal is turned on (V_GATE=3V) according to an embodiment of the present disclosure.

[0152] like Figure 8D The simulation results shown are as follows: Figure 8D Display based on Figure 8 The simulation results of the architecture, when V_GATE=0-3V and V_Ctrl=3V, show the changes in various voltages and output current as follows: Figure 8D As shown, the V_GATE signal can smoothly affect V_VC within a specific range (below 2.3V) via the control transistor 100, further causing the current I_R1 of the sensing transistor 200 to increase linearly as expected. The main measurement indicator V_VD decreases linearly as expected, thus enabling the sensing and measurement of the RT signal at the reaction terminal.

[0153] Figure 9 This is a graph showing the simulation results of the electrical changes of each node and capacitor C according to an embodiment of the present disclosure.

[0154] like Figure 9The simulation results shown are intended to demonstrate that the controllable sensing device 10 according to this disclosure can operate continuously, and that, through the use of capacitor C, the key measurement parameter V_VD can remain unchanged and undisturbed for a period of time after the control transistor 100 is turned off. Figure 9 Display based on Figure 8 The simulation results of the architecture have different combinations of V_GATE and V_Ctrl in sequence.

[0155] By enabling / disabling the combination of V_GATE and V_Ctrl, these changes can be observed as shown above. Figures 8A to 8D The results of the individual simulations are consistent, and it can be further observed that when V_Ctrl=0 (i.e. when the control transistor 100 is turned off as a switch), the capacitor C is already charged. Therefore, after the control transistor 100 is turned off, the capacitor C continues to discharge, allowing V_VC to be maintained (slowly discharged), and the sensing transistor 200 continues to operate. I_RA and V_VD will continue to exist and can be measured.

[0156] Figure 10 This is a graph showing the simulation results of electrical changes when noise is applied to nodes having capacitance according to an embodiment of the present disclosure.

[0157] like Figure 10 The simulation results shown are intended to further demonstrate that the controllable sensing device 10 according to this disclosure can block noise interference from V_GATE at a specific time and can perform detection at a specific time as needed. Figure 10 Display based on Figure 8 The simulation results of the architecture have different combinations of V_GATE, V_Ctrl, and noise in sequence.

[0158] like Figure 10 As shown, at time 1.2m on the horizontal axis, the voltage change of V_GATE no longer transfers to V_VC after V_Ctrl turns off the control transistor 100 (blocking the signal from the reaction terminal RT). However, due to the continuous discharge of capacitor C, the sensing transistor 200 continues to operate, thereby allowing the measurement of the voltage and change of V_VD. At time 11.6m on the horizontal axis, the voltage of V_GATE stabilizes, and the control transistor 100 is turned on again by the voltage provided by V_Ctrl. Then, the signal of V_VD will be re-aligned to V_GATE as expected.

[0159] Figure 11A This is a graph showing experimental results of sensing a pH 4 standard solution using a sensing transistor without a control transistor to block noise, according to an embodiment of the present disclosure.

[0160] Figure 11BThis is a graph showing experimental results of sensing a pH 4 standard solution using a sensing transistor having a control transistor to block noise, according to an embodiment of the present disclosure.

[0161] Figure 12A This is a graph showing experimental results of sensing a pH 7 standard solution using a sensing transistor without a control transistor to block noise, according to an embodiment of the present disclosure.

[0162] Figure 12B This is a graph showing experimental results of sensing a pH 7 standard solution using a sensing transistor having a control transistor to block noise, according to an embodiment of the present disclosure.

[0163] Figure 13A This is a graph showing experimental results of sensing a pH 10 standard solution using a sensing transistor without a control transistor to block noise, according to an embodiment of the present disclosure.

[0164] Figure 13B This is a graph showing experimental results of sensing a pH 10 standard solution using a sensing transistor having a control transistor to block noise, according to an embodiment of the present disclosure.

[0165] In some embodiments, experimental results of the sensing signal of the pH 4 / 7 / 10 standard solution are obtained by integrating the controllable sensing device 10 into a known source follower circuit or a known Wheatstone bridge to convert the output signal read from the EGFET (the sensing transistor of the controllable sensing device) into a linear form. The pH 4 / 7 / 10 standard solution is purchased from Merck. The output signal characteristics of different pH standard solution samples can be identified by determining the falling edge, for example, at the point where voltage = 1.

[0166] like Figure 11A , 12A As shown in the experimental results of 13A, when a noise signal of about 0.8V is applied to the input terminal at the same time, the output signal will be affected by the noise without the control transistor blocking the noise.

[0167] In comparison, as such Figure 11B , 12B As shown in Figure 13B, when a noise signal of approximately 0.8V is simultaneously applied to the input terminal, the output signal is not affected by the noise when the control transistor is used to block the noise. Therefore, the measurement of the output signal of the pH 4 / 7 / 10 standard solution can be performed by reducing the influence of noise using the control transistor of this disclosure.

[0168] This disclosure further provides a controllable sensing method. The controllable sensing method includes the following steps: providing a reactive terminal; providing a control transistor, which includes a control terminal, a first conductive terminal, and a second conductive terminal; providing a sensing transistor, which includes a sensing gate, a sensing source, and a sensing drain; and receiving a control signal via the control terminal for switching on a signal change sensed via a readout terminal, wherein the readout terminal is configured to be electrically connected to one of the sensing source and sensing drain of the sensing transistor, wherein the reactive terminal is electrically connected to one of the first conductive terminal and the second conductive terminal, and wherein the sensing gate is electrically connected to the other of the first conductive terminal and the second conductive terminal.

[0169] In some embodiments, the magnitude of the control signal is variable. The conductivity of the control transistor is variable depending on the magnitude of the control signal.

[0170] In some embodiments, the duration of the control signal is variable. The duration during which the control transistor is turned on is variable depending on the duration of the control signal.

[0171] In some embodiments, the second conductive terminal is directly electrically connected to the sensing gate.

[0172] In some embodiments, the control transistor is a metal-oxide-semiconductor field-effect transistor (MOSFET), wherein the control terminal is the gate, the first conductive terminal is one of the source and drain of the MOSFET, and the second conductive terminal is the other of the source and drain of the MOSFET. In some embodiments, the sensing transistor is an extended gate field-effect transistor (EGFET).

[0173] In some embodiments, the reaction end is configured to be connected to the sample reaction region used for ion sensing.

[0174] In some embodiments, the controllable sensing method further includes providing a capacitor electrically connected to the sensing gate and in parallel with the sensing transistor.

[0175] In some embodiments, the control transistor is an N-MOSFET; the sensing transistor is an N-MOSFET; and the readout terminal is electrically connected to the sensing drain.

[0176] In some embodiments, the controllable sensing method further includes: providing a capacitor, one end of which is electrically connected between a sensing gate and a second conductive terminal, and the other end of which is electrically connected to a sensing source.

[0177] In some embodiments, the controllable sensing method further includes: providing a ground terminal electrically connected to a sensing source; and providing a voltage terminal electrically connected to a sensing drain.

[0178] In some embodiments, the control transistor is a P-MOSFET; the sensing transistor is an N-MOSFET; and the readout terminal is electrically connected to the sensing drain.

[0179] In some embodiments, the controllable sensing method further includes: providing a capacitor, one end of which is electrically connected between a sensing gate and a second conductive terminal, and the other end of which is electrically connected to a sensing source.

[0180] In some embodiments, the controllable sensing method further includes: providing a ground terminal electrically connected to a sensing source; and providing a voltage terminal electrically connected to a sensing drain.

[0181] In some embodiments, the control transistor is an N-MOSFET; the sensing transistor is a P-MOSFET; and the readout terminal is electrically connected to the sensing drain.

[0182] In some embodiments, the controllable sensing method further includes: providing a capacitor, one end of which is electrically connected between a sensing gate and a second conductive terminal, and the other end of which is electrically connected to a sensing source.

[0183] In some embodiments, the controllable sensing method further includes providing a voltage terminal electrically connected to a sensing source.

[0184] In some embodiments, the control transistor is a P-MOSFET; the sensing transistor is a P-MOSFET; and the readout terminal is electrically connected to the sensing drain.

[0185] In some embodiments, the controllable sensing method further includes: providing a capacitor, one end of which is electrically connected between a sensing gate and a second conductive terminal, and the other end of which is electrically connected to a sensing source.

[0186] In some embodiments, the controllable sensing method further includes providing a voltage terminal electrically connected to a sensing source.

[0187] Although this disclosure has been described by way of specific embodiments, those skilled in the art can make various modifications and alterations thereto without departing from the scope and spirit of this disclosure as set forth in the claims.

Claims

1. A controllable sensing device, comprising: Reaction end; Control transistors, including: The control terminal is configured to receive control signals. First conductive terminal, and Second conductive terminal; Sensing transistor, including: Sensing gate, Sensing source, and Sensing drain; and The readout terminal is configured to be electrically connected to one of the sensing source and sensing drain of the sensing transistor; The reaction terminal is electrically connected to one of the first conductive terminal and the second conductive terminal, and The sensing gate is electrically connected to the other of the first conductive terminal and the second conductive terminal.

2. The controllable sensing device according to claim 1, wherein, The magnitude of the control signal is variable.

3. The controllable sensing device according to claim 2, wherein, The conductivity of the control transistor is variable depending on the magnitude of the control signal.

4. The controllable sensing device according to claim 1, wherein, The duration of the control signal is variable.

5. The controllable sensing device according to claim 4, wherein, The period during which the control transistor is turned on is variable depending on the period of the control signal.

6. The controllable sensing device according to claim 1, wherein, The second conductive terminal is directly electrically connected to the sensing gate.

7. The controllable sensing device according to claim 1, wherein, The control transistor is a metal-oxide-semiconductor field-effect transistor (MOSFET), wherein the control terminal is the gate, the first conductive terminal is one of the source and drain of the MOSFET, and the second conductive terminal is the other of the source and drain of the MOSFET.

8. The controllable sensing device according to claim 1, wherein, The sensing transistor is an extended gate field-effect transistor (EGFET).

9. The controllable sensing device according to claim 1, wherein, The reaction end is configured to be connected to the sample reaction region used for ion sensing.

10. The controllable sensing device according to claim 1, further comprising: A capacitor is electrically connected to the sensing gate and in parallel with the sensing transistor.

11. The controllable sensing device according to claim 1, wherein: The control transistor is an N-MOSFET; The sensing transistor is an N-MOSFET; and The readout terminal is electrically connected to the sensing drain.

12. The controllable sensing device according to claim 11, further comprising: A capacitor, one end of which is electrically connected between the sensing gate and the second conductive terminal, and the other end of which is electrically connected to the sensing source.

13. The controllable sensing device of claim 11, further comprising: The grounding terminal is electrically connected to the sensing source electrode; as well as The voltage terminal is electrically connected to the sensing drain.

14. The controllable sensing device according to claim 1, wherein: The control transistor is a P-MOSFET; The sensing transistor is an N-MOSFET; and The readout terminal is electrically connected to the sensing drain.

15. The controllable sensing device according to claim 14, further comprising: A capacitor, one end of which is electrically connected between the sensing gate and the second conductive terminal, and the other end of which is electrically connected to the sensing source.

16. The controllable sensing device of claim 14, further comprising: The grounding terminal is electrically connected to the sensing source electrode; as well as The voltage terminal is electrically connected to the sensing drain.

17. The controllable sensing device according to claim 1, wherein: The control transistor is an N-MOSFET; The sensing transistor is a P-MOSFET; and The readout terminal is electrically connected to the sensing drain.

18. The controllable sensing device according to claim 17, further comprising: A capacitor, one end of which is electrically connected between the sensing gate and the second conductive terminal, and the other end of which is electrically connected to the sensing source.

19. The controllable sensing device according to claim 17, further comprising: The voltage terminal is electrically connected to the sensing source electrode.

20. The controllable sensing device according to claim 1, wherein: The control transistor is a P-MOSFET; The sensing transistor is a P-MOSFET; and The readout terminal is electrically connected to the sensing drain.

21. The controllable sensing device according to claim 20, further comprising: A capacitor, one end of which is electrically connected between the sensing gate and the second conductive terminal, and the other end of which is electrically connected to the sensing source.

22. The controllable sensing device of claim 20, further comprising: The voltage terminal is electrically connected to the sensing source electrode.

23. A controllable sensing method, comprising the following steps: Provide the reaction end; A control transistor is provided, comprising: a control terminal, a first conductive terminal, and a second conductive terminal; A sensing transistor is provided, comprising: a sensing gate, a sensing source, and a sensing drain; and The control terminal receives a control signal to switch the signal change sensed by the readout terminal, wherein the readout terminal is configured to be electrically connected to one of the sensing source and sensing drain of the sensing transistor. The reaction terminal is electrically connected to one of the first conductive terminal and the second conductive terminal, and The sensing gate is electrically connected to the other of the first conductive terminal and the second conductive terminal.

24. The controllable sensing method according to claim 23, wherein, The magnitude of the control signal is variable.

25. The controllable sensing method according to claim 24, wherein, The conductivity of the control transistor is variable depending on the magnitude of the control signal.

26. The controllable sensing method according to claim 23, wherein, The duration of the control signal is variable.

27. The controllable sensing method according to claim 26, wherein, The period during which the control transistor is turned on is variable depending on the period of the control signal.

28. The controllable sensing method according to claim 23, wherein, The second conductive terminal is directly electrically connected to the sensing gate.

29. The controllable sensing method according to claim 23, wherein, The control transistor is a metal-oxide-semiconductor field-effect transistor (MOSFET), wherein the control terminal is the gate, the first conductive terminal is one of the source and drain of the MOSFET, and the second conductive terminal is the other of the source and drain of the MOSFET.

30. The controllable sensing method according to claim 23, wherein, The sensing transistor is an extended gate field-effect transistor (EGFET).

31. The controllable sensing method according to claim 23, wherein, The reaction end is configured to be connected to the sample reaction region used for ion sensing.

32. The controllable sensing method according to claim 23, further comprising: A capacitor is provided, which is electrically connected to the sensing gate and in parallel with the sensing transistor.

33. The controllable sensing method according to claim 23, wherein: The control transistor is an N-MOSFET; The sensing transistor is an N-MOSFET; and The readout terminal is electrically connected to the sensing drain.

34. The controllable sensing method according to claim 33, further comprising: A capacitor is provided, one end of which is electrically connected between the sensing gate and the second conductive terminal, and the other end of which is electrically connected to the sensing source.

35. The controllable sensing method according to claim 33, further comprising: A ground terminal is provided, which is electrically connected to the sensing source electrode; as well as A voltage terminal is provided, which is electrically connected to the sensing drain.

36. The controllable sensing method according to claim 23, wherein: The control transistor is a P-MOSFET; The sensing transistor is an N-MOSFET; and The readout terminal is electrically connected to the sensing drain.

37. The controllable sensing method according to claim 36, further comprising: A capacitor is provided, one end of which is electrically connected between the sensing gate and the second conductive terminal, and the other end of which is electrically connected to the sensing source.

38. The controllable sensing method according to claim 36, further comprising: A ground terminal is provided, which is electrically connected to the sensing source electrode; as well as A voltage terminal is provided, which is electrically connected to the sensing drain.

39. The controllable sensing method according to claim 23, wherein: The control transistor is an N-MOSFET; The sensing transistor is a P-MOSFET; and The readout terminal is electrically connected to the sensing drain.

40. The controllable sensing method according to claim 39, further comprising: A capacitor is provided, one end of which is electrically connected between the sensing gate and the second conductive terminal, and the other end of which is electrically connected to the sensing source.

41. The controllable sensing method according to claim 39, further comprising: A voltage terminal is provided, which is electrically connected to the sensing source electrode.

42. The controllable sensing method according to claim 23, wherein: The control transistor is a P-MOSFET; The sensing transistor is a P-MOSFET; and The readout terminal is electrically connected to the sensing drain.

43. The controllable sensing method according to claim 42, further comprising: A capacitor is provided, one end of which is electrically connected between the sensing gate and the second conductive terminal, and the other end of which is electrically connected to the sensing source.

44. The controllable sensing method according to claim 42, further comprising: A voltage terminal is provided, which is electrically connected to the sensing source electrode.

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