A multi-target configured high-aspect-ratio-capable (TGV) seed layer sputter device and method

Abstract

The application relates to the technical field of seed layer sputtering, in particular to a multi-target-arranged high-deep-hole-capability TGV seed layer sputtering device and method, the multi-target-arranged high-deep-hole-capability TGV seed layer sputtering device comprising: a rotary base for bearing a substrate; a multi-target sputtering assembly, the multi-target sputtering assembly comprising: a center target arranged above the rotary base, eccentric targets arranged around the center target; an angle adjusting mechanism connected with the center target, the angle adjusting mechanism being capable of repeatedly adjusting the inclination angle of the center target during sputtering; and a power control component, the power control component being capable of independently and dynamically regulating the power of the center target and the eccentric targets in a hybrid driving mode. The application combines the center target and the five eccentric targets, and cooperates with the multi-target-arranged high-penetration-capability TGV seed layer sputtering method, so that the in-hole coverage uniformity and the film completeness are significantly improved.

Description

Technical Field

[0001] This invention belongs to the field of glass through-hole seed layer sputtering technology applied in advanced packaging, and in particular relates to a multi-target configuration high deep hole capability TGV seed layer sputtering apparatus and method. Background Technology

[0002] As electronic products evolve towards higher performance, smaller size, and greater computing power, advanced packaging plays an irreplaceable role. Through-Glass Via (TGV) technology refers to the technique of creating vertical conductive vias on a glass substrate for inter-chip interconnection in advanced packaging to facilitate information transmission. Compared to Through-Silicon Vias (TSV), TGV offers lower high-frequency signal loss and higher insulation, demonstrating significant application potential in the packaging of radio frequency devices, optoelectronic devices, and microelectromechanical systems (MEMS).

[0003] The manufacturing process of TGV involves forming high aspect ratio vias on a glass substrate and depositing a thin, continuous conductive seed layer on the inner surface of the TGV via. The quality of this seed layer directly determines the success or failure of subsequent electroplating. However, using traditional physical vapor deposition techniques, such as magnetron sputtering, presents a significant challenge during seed layer deposition due to the quasi-linear propagation of the sputtered atomic or ion streams. In high aspect ratio via structures, the interaction between the via edges and sputtered particles first easily leads to a localized "masking effect." This not only results in the film at the TGV opening being much thicker than the film inside the via, causing a severe deficiency in step coverage (SC%, DSC%), but also causes excessive deposition at the via opening, leading to thickness differences in the planar film at different locations, thus increasing the in-plane uniformity index U of the entire substrate. On the sidewalls and bottom of the TGV, the seed layer may be very thin or even interrupted, while at the opening, excessive deposition creates vertical structural differences. This imbalance of "thick accumulation at the pore opening and insufficient accumulation inside the pore" will simultaneously worsen the performance of SC / DSC and U%.

[0004] To address this issue, the industry has explored various approaches. For example, patent document CN118910563B discloses a wafer coating apparatus for improving step coverage. This apparatus employs a central target and two symmetrically arranged side targets, and tilts the wafer using a "tilting and reversing mechanism," allowing micro-holes to alternately face the side targets, thereby increasing the amount of metal sputtered onto the sidewalls of the micro-holes and improving step coverage to some extent. However, the inventors of this application have discovered the following inherent defects in the technical solution of this patent document: First, the design of this solution mainly focuses on improving the step coverage index, but for applications with large-size substrates (e.g., 26 inches and above), introducing multiple sputtering sources, especially eccentric targets, will negatively impact the uniformity of the film thickness on the substrate's surface. This patent does not provide an effective solution, making it difficult to balance the two indices of deep-hole coating and surface uniformity. Second, the tilted substrate solution it employs suffers from structural complexity and low process efficiency when dealing with large-size, heavy, and fragile glass substrates, making it unsuitable for mass production requirements that demand high versatility, high yield, and high capacity.

[0005] On the other hand, high-energy ions generated by high-power pulsed magnetron sputtering (HiPIMS) can increase ion kinetic energy, making them easier to reach the bottom and adhere. However, the instantaneous power density is extremely high, generating a large number of high-energy metal ions and process gas ions. When these high-energy ions bombard the insulating TGV glass substrate, electron injection is hindered, leading to the accumulation of positive charge, which in turn prevents ions from reaching the bottom of the TGV via and affects the sputtering rate.

[0006] In summary, existing technologies have not yet provided a solution that can simultaneously address the problems of insufficient deep-hole coverage, poor uniformity of film thickness on large-area substrates, and charge accumulation in TGV seed layer sputtering processes within a single system. Therefore, developing a TGV seed layer sputtering apparatus and method that can achieve both good deep-hole coverage and high uniformity, while also resolving the charge accumulation problem, has significant technological importance and market value. Summary of the Invention

[0007] The technical problem to be solved by the present invention is to provide a TGV seed layer sputtering apparatus and method with high deep hole penetration capability that can solve the problems of insufficient deep hole penetration capability, poor uniformity of film thickness on large-area substrates, and charge accumulation in a single system. The present invention provides a TGV seed layer sputtering apparatus and method with high deep hole capability and multi-target configuration.

[0008] To achieve the above objectives, the present invention provides the following technical solution:

[0009] In a first aspect, the present invention provides a multi-target configuration high deep-hole capability TGV seed layer sputtering apparatus, comprising: a rotating base for supporting a substrate;

[0010] A multi-target sputtering assembly, the multi-target sputtering assembly comprising:

[0011] A central target is positioned above the rotating base, and an eccentric target is positioned around the central target;

[0012] An angle adjustment mechanism is connected to a central target and satisfies the following conditions: during the sputtering process, the central target is continuously oscillated to adjust the tilt angle, thereby improving the deposition uniformity.

[0013] A power control component that satisfies the following conditions: applying an RF sputtering mode to the central target and applying a HiPIMS sputtering mode to the eccentric target.

[0014] Furthermore, the number of eccentric targets is five, and the five eccentric targets are evenly distributed at angular intervals of 72° with the central target as the center.

[0015] Furthermore, the incident angle γ of the eccentric target is adjustable, with an adjustment range of 15° to 35°.

[0016] Furthermore, a TGV glass substrate is placed on the rotating base, and the rotating base can drive the TGV glass substrate to rotate during the sputtering process.

[0017] Furthermore, the rotating base rotates at a speed of 15-45 revolutions per minute.

[0018] Furthermore, the target material for the central target and the eccentric target is at least one of Cu, Ti, or Ru.

[0019] Secondly, the present invention also provides a method for sputtering a high-deep-hole capability TGV seed layer with a multi-target configuration, comprising the following steps:

[0020] S1. Drive the rotary base to rotate;

[0021] S2. Start sputtering on the central target and the eccentric target. Apply an RF sputtering mode to the central target through a power control component and simultaneously apply a HiPIMS sputtering mode to the eccentric target to start sputtering.

[0022] S3. During the sputtering process, the angle adjustment mechanism controls the central target to continuously swing or adjust its posture within an angle range of ±5°.

[0023] S4. During the sputtering process, the sputtering power of the central target and the eccentric target is independently adjusted by the power control component.

[0024] Furthermore, in step S1, the rotational speed of the rotating base is set to 20 revolutions per minute.

[0025] Furthermore, the TGV structure prepared according to the multi-target configuration high deep-hole capability TGV seed layer sputtering method described above has an aspect ratio ≤10:1.

[0026] In summary, the present invention has the following beneficial effects:

[0027] 1. This invention provides a high-depth-through-hole capability TGV seed layer sputtering apparatus with a multi-target configuration, employing a "one central target, five eccentric targets" layout. The five eccentric targets are set at tilt angles of 15° to 35°, providing incident particles at large angles that directly bypass the obstruction at the opening of high aspect ratio through-holes, effectively covering the sidewalls and bottom of the holes. More importantly, the five eccentric targets are evenly distributed at 72° angular intervals, and combined with a rotatable substrate, this ensures that sputtered particles can enter the microholes from more diverse angles, thereby eliminating coverage blind spots that may be caused by fixed target positions and significantly improving coverage uniformity and coating integrity within the holes.

[0028] 2. This invention provides a TGV seed layer sputtering apparatus with high deep hole capability through a multi-target configuration. Through the synergistic design of "dynamic tilting of the central target" and "multi-target hybrid drive", the use of HiPIMS mode to drive the eccentric target can effectively ensure the deep hole penetration capability; while the central target can be dynamically tilted by ±5° to actively compensate and optimize, thus ensuring the planar uniformity of the large-area substrate. Ultimately, it achieves excellent performance with U% in ±1%-3% and DSC% in 5-12%.

[0029] 3. This invention provides a multi-target configuration for high-depth-hole capability TGV seed layer sputtering. The central target employs a dynamic tilt adjustment approach. Its core purpose is not to directly enhance in-hole coverage, but rather to actively compensate for the excessive film thickness concentration in the central region of the substrate caused by vertical sputtering of the central target. Even on large-area substrates, it achieves good sputtering results with planar film thickness uniformity U% between ±1% and 3%, single-sided step coverage of 3-5%, and double-sided step coverage of 5-12%.

[0030] 4. This invention employs a hybrid driving mode, combining radio frequency (RF) and high-power pulsed magnetron sputtering (HiPIMS). The power control unit is configured to apply an RF sputtering mode to the central target and a HiPIMS sputtering mode to the eccentric target. Traditional HiPIMS driving generates a large number of positive ions that bombard the insulating glass substrate, leading to positive charge accumulation and a repulsive electric field that hinders the penetration of subsequent ions. The ingenuity of this invention lies in the synergistic application of RF sputtering to the central target. The large number of electrons in the RF plasma actively neutralize the positive charge accumulated on the substrate surface by HiPIMS, thereby eliminating the confinement effect. This synergistic principle not only ensures that the penetration advantage of HiPIMS high-energy ions is fully utilized but also simultaneously improves the overall sputtering rate and uniformity. Attached Figure Description

[0031] Figure 1 This is a schematic cross-sectional view of the structure of the present invention;

[0032] Figure 2 This is a schematic diagram of the target distribution of the multi-target sputtering assembly of the present invention;

[0033] Figure 3 It is a diagram showing the uniformity of film thickness distribution in a plane.

[0034] Explanation of reference numerals in the attached drawings: 1-Central target, 2-Eccentric target, 3-Rotating base, 4-TGV glass substrate, 5-Angle adjustment mechanism, 6-Power control component. Detailed Implementation

[0035] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0036] It should be noted that in the description of this invention, the terms "center", "upper", "lower", "left", "right", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0037] This embodiment provides a multi-target configuration for high-depth-hole capability TGV seed layer sputtering. This apparatus is used to deposit a high-quality seed layer within deep holes in a large TGV glass substrate 4. The glass substrate has a pre-formed TGV via structure with a high aspect ratio.

[0038] The invention also includes a rotating base 3 for supporting the TGV glass substrate 4. During sputtering, the rotating base 3 can rotate at a constant speed of 15-45 rpm. The rotating base 3 is designed to ensure that each deep hole on the glass substrate periodically passes through all sputtering targets, thereby improving the uniformity of the overall deposition.

[0039] Above the rotating base 3, a multi-target sputtering assembly is installed. For example... Figure 2As shown, the assembly includes a central target 1 and five eccentric targets 2. The central target 1 is sputtered perpendicular to the horizontal TGV glass substrate 4 in the initial state. The five eccentric targets 2 are evenly distributed around the central target 1 with angular positions of 0°, 72°, 144°, 216°, and 288°, with the central target 1 as the center.

[0040] The distance R between the center of each eccentric target 2 and the center of the central target 1 is adjustable from 200 to 350 mm, and the adjustable distance between the central target 1 and the eccentric target 2 and the TGV glass substrate 4 is 100 to 200 mm. This five-target structure, combined with the rotatable TGV glass substrate 4 during sputtering, effectively avoids the systematic shading effect that occurs in high-density TGV arrays, improves the uniformity of coverage on the inner wall of the hole, and enhances the integrity of the coating in deep holes.

[0041] A key technical feature of this invention is that the central target 1 can be dynamically tilted by ±5° during the sputtering process. This dynamic tilt can actively compensate for the excessive concentration of the coating in the central region of the substrate caused by the vertical sputtering of the central target 1, thereby optimizing the planar film thickness uniformity (U%) of the entire TGV glass substrate 4, reducing it to below ±1.5%. Furthermore, each eccentric target 2 faces the TGV glass substrate 4 at a specific tilt angle, and its incident angle γ can be adjusted within the range of 15° to 35°. This tilting arrangement aims to provide incident particles at a suitable angle, making it easier for them to reach and deposit on the vertical deep hole sidewalls of the TGV glass substrate 4, which is also crucial for improving deep hole penetration capability.

[0042] Another key technical feature of this device lies in its power control component 6, which can dynamically regulate the power of each target source using a hybrid RF / HiPIMS driving mode. In a preferred process, the power control component 6 applies an RF sputtering mode to the central target 1 to ensure and optimize the overall planar uniformity. Simultaneously, a HiPIMS sputtering mode is applied to the five eccentric targets 2. The HiPIMS sputtering mode generates highly ionized metal plasma, which can effectively overcome the shielding effect of deep holes, thereby improving the deep hole coating capability. By supporting dynamic adjustment and independent allocation of power for different target sources, and allowing for fine-tuning of target angles and distances, independent optimization of the two core indicators—planar film thickness uniformity and deep hole penetration—is successfully achieved.

[0043] To more clearly illustrate how this embodiment solves the technical problems of the prior art, its core working principle is explained as follows:

[0044] (1) In traditional vertical sputtering, for vias with high aspect ratios, the sidewalls block the bottom, making it difficult for sputtered particles to reach the bottom directly, resulting in a "shielding effect". The five eccentric targets 2 of the present invention are set at tilt angles of 15° to 35°, allowing sputtered particles to bypass the sidewalls and effectively cover the sidewalls and bottom of the vias. However, multi-target systems are prone to excessive film thickness concentration in the center of the substrate. To address this, the central target 1 of the present invention is dynamically tilted by ±5° through the angle adjustment mechanism 5. Its core purpose is to actively compensate for the film thickness in the central region, "pushing" some sputtered particles to the edge, thereby significantly optimizing the planar film thickness uniformity of large-area substrates. At the same time, the TGV glass substrate 4 is placed on the rotating base 3 and rotates during operation, further homogenizing the deposition in all directions, reducing the film thickness gradient, and improving the overall film coverage.

[0045] (2) The extremely high aspect ratio of TGV makes conventional sputtering of particles insufficient to penetrate to the bottom of the hole. In this embodiment, a high-power pulsed magnetron sputtering (HiPIMS) is used to drive the eccentric target 2 through a power control component. HiPIMS can generate high-energy metal ions and process gas ions, making it easier for them to penetrate deep holes and reach the bottom and adhere. However, when a large number of high-energy ions generated by HiPIMS bombard the insulating TGV glass substrate, positive charge accumulation will occur due to the obstruction of electron injection. This positive charge layer will form a repulsive electric field, which will hinder subsequent ions from reaching the bottom of the TGV via and affect the sputtering rate. To solve this problem, the present invention uses radio frequency (RF) sputtering to drive the central target 1. The plasma generated during RF sputtering contains a large number of electrons, which can effectively neutralize the charge accumulated by HiPIMS on the surface of the TGV glass substrate 4, thereby eliminating the obstruction effect and ensuring that high-energy ions can reach the bottom of the TGV via smoothly. Ultimately, while improving the deep hole capability and step coverage, it also improves the overall sputtering rate and uniformity.

[0046] This embodiment also provides a method for sputtering a TGV seed layer with high deep-hole capability using a multi-target configuration, the process of which mainly includes the following steps:

[0047] Step S1: Place the TGV glass substrate 4 to be processed on the rotating base 3, and start the rotating base 3 to rotate at a speed of 15-45 rpm.

[0048] Step S2: Activate the power control unit to apply RF power to the central target 1 and HiPIMS power to the five eccentric targets 2 at the same time to start the sputtering deposition process.

[0049] Step S3: During the sputtering process, the central target 1 is dynamically tilted by ±5° to compensate for the coating thickness in the central area of ​​the TGV glass substrate 4 in real time and optimize the uniformity of the planar film thickness.

[0050] Step S4: After the sputtering reaches the preset time or thickness, stop the power supply to all target sources to complete the sputtering.

[0051] Comparison of proportions and effects

[0052] To verify the significant advancements of the present invention compared to existing technologies, the inventors conducted multiple sets of comparative experiments. To ensure fairness in the comparison, all comparative examples and embodiments of the present invention were conducted under a unified process environment. Specific basic process parameters were set as follows: the pressure at the bottom of the vacuum chamber was 5.0 × 10⁻⁶. -6 Torr, the flow rate of the process gas argon is controlled at 200 sccm, and the sputtering process pressure is maintained at 2.0 × 10⁻⁶. -3 Torr was used, with a target-to-substrate distance of 150 mm and a target surface magnetic field strength of 200–250 Gauss (using an unbalanced magnetic field design). All experiments were conducted on TGV glass substrates measuring 515 mm × 510 mm with holes 450 μm deep and 50 μm wide (i.e., an aspect ratio of 9:1), under similar total power and processing time. The results are recorded in the table below:

[0053]

[0054] The data above shows that, from Comparative Example 1 to Comparative Example 3, with different target configurations, the various performance indicators (U%, SC%, DSC%) show a gradual improvement trend. Specifically:

[0055] Comparative Example 1

[0056] Sputtering was performed using a traditional single-target configuration, employing a single target with an area of ​​21 inches (533.4 mm) × 21 inches (533.4 mm), fixedly mounted directly above the TGV glass substrate 4. During deposition, the rotating base 3 rotated at 30 rpm, but the central target lacked dynamic angle compensation. The central target 1 used a DC sputtering mode with a power density of approximately 3–5 W / cm², without RF or HiPIMS hybrid drive. Due to the single vertically incident particle flux, over-deposition easily occurred at the aperture, while the inner sidewalls and bottom of the aperture were insufficiently thick, resulting in extremely poor planar film thickness uniformity (U%), and poor step coverage (SC%) and DSC%.

[0057] Comparative Example 2

[0058] Sputtering was performed using a symmetrical dual-target configuration. Two targets, each with an area of ​​10.5 inches (266.7 mm) × 10.5 inches (266.7 mm), were mounted on either side of the central axis of the TGV glass substrate 4. Their adjustable tilt angles ranged from 8° to 50°, and they were symmetrically distributed. After adjusting the fixed tilt angles for a single deposition, deposition could proceed. During deposition, both targets remained fixed without dynamic oscillation or angle adjustment; the rotating base 3 rotated at 30 rpm during deposition. Both targets used DC sputtering mode with a power density of approximately 3–5 W / cm², and a hybrid drive method was not used. Because only symmetrical oblique flux could be provided, it was still impossible to simultaneously cover the orifice and bottom, resulting in limited improvement in planar uniformity U%.

[0059] Comparative Example 3

[0060] A three-target configuration was used for sputtering, comprising a central target 1 and two eccentric targets 2. The central target 1 has a target area of ​​13.5 inches (342.9 mm), and the two eccentric targets 2 each have a target area of ​​7 inches (177.8 mm) × 7 inches (177.8 mm). The central target 1 is fixed directly above the TGV glass substrate 4. The tilt angle of the two eccentric targets 2 is adjustable from 8° to 50°. After adjusting the tilt angle for a single deposition, deposition can proceed. During deposition, the central target 1 remains fixed, while the two eccentric targets 2 have a dynamic swing range of ±20°. During deposition, the rotating base 3 rotates at a speed of 30 rpm. RF power is applied to the central target 1, and HiPIMS power is applied to the two eccentric targets 2, with a power density of approximately 3–5 W / cm². Although this configuration improves the sidewall thickness compared to Comparative Example 2, its dynamic compensation capability is limited and still insufficient to simultaneously meet the requirements for planar uniformity U% and deep hole step coverage SC% and DSC%.

[0061] In summary, the comparisons above show that none of the aforementioned comparative examples effectively suppress orifice thickness accumulation and in-plane unevenness. Therefore, the planar uniformity U% is only limitedly improved, and the increases in in-hole step coverage SC% and DSC% are also limited. However, when the six-target configuration of this invention is adopted (i.e., one central target 1 + five eccentric targets 2, combined with dynamic tilting of the central target 1 and a hybrid driving mode), the planar uniformity U% can be further reduced to ±1-3%, while SC% and DSC% are significantly improved. This result proves that the technical effect of this invention does not stem from a simple increase in the number of targets, but rather from the synergistic effect of the target configuration structure and the dynamic driving method. It fundamentally solves the technical contradictions that existing technologies cannot overcome, achieving a breakthrough technical effect.

[0062] A preferred set of structural parameters for this embodiment is as follows: a TGV glass substrate 4 with dimensions of 515mm × 510mm is used. This TGV glass substrate 4 has a through-hole structure with a depth of 450μm, a width of 50μm, and an aspect ratio of 9:1. The rotating base 3 rotates at a speed of 30 rpm. In this embodiment, the central target 1 uses a target material with a diameter of 8 inches, and both the eccentric targets 2 use target materials with a diameter of 8 inches. Using the apparatus and method of this embodiment, a planar film thickness uniformity U of ±1.5% can be achieved on a large-area glass substrate, while the step coverage rate of single-sided sputtering within the hole reaches 3.2%, and the double-sided step coverage rate reaches 5.8%, demonstrating excellent performance.

[0063] The above are all preferred embodiments of the present invention and are not intended to limit the scope of protection of the present invention. Therefore, all equivalent changes made in accordance with the structure, shape and principle of the present invention should be covered within the scope of protection of the present invention.

Claims

1. A multi-target configuration for high-deep-hole capability TGV seed layer sputtering, characterized in that, include: Rotary base for supporting substrate (3); A multi-target sputtering assembly, the multi-target sputtering assembly comprising: The central target (1) is set above the rotating base (3), and the eccentric targets (2) are set around the central target (1); the number of the eccentric targets (2) is five, and the five eccentric targets (2) are evenly distributed with the central target (1) as the center, at an angular interval of 72°. The central target (1) is sputtered perpendicular to the horizontal TGV glass substrate (4) in the initial state; the incident angle γ of the eccentric target can be adjusted in the range of 15° to 35°; An angle adjustment mechanism (5) is connected to the central target (1). The angle adjustment mechanism (5) is configured to control the central target (1) to continuously swing or adjust its posture within an angle range of ±5° during the sputtering process. The power control component (6) applies an RF sputtering mode to the central target (1) and a HiPIMS sputtering mode to the eccentric target (2) to utilize the large number of electrons contained in the plasma generated during the RF sputtering process to effectively neutralize the charge accumulated on the surface of the HiPIMS on the TGV glass substrate (4), thereby eliminating the obstruction effect and ensuring that high-energy ions can reach the bottom of the TGV via smoothly.

2. The TGV seed layer sputtering apparatus with high deep-hole capability and multi-target configuration according to claim 1, characterized in that: The TGV glass substrate (4) is placed on the rotating base (3), and the rotating base (3) can drive the TGV glass substrate (4) to rotate during the sputtering process.

3. The multi-target configuration high-deep-hole capability TGV seed layer sputtering apparatus according to claim 2, characterized in that: The rotating base (3) rotates at a speed of 15-45 revolutions per minute.

4. The TGV seed layer sputtering apparatus with high deep-hole capability and multi-target configuration according to claim 1, characterized in that: The target material of the central target (1) and the eccentric target (2) is at least one of Cu, Ti or Ru.

5. A method for sputtering a high-deep-hole capability TGV seed layer using a multi-target configuration, characterized in that: The method employs a multi-target configuration high-deep-hole capability TGV seed layer sputtering apparatus as described in any one of claims 1 to 4, and includes the following steps: S1. Drive the rotary base (3) to rotate; S2. Start sputtering on the central target (1) and the eccentric target (2). Apply an RF sputtering mode to the central target (1) through the power control unit (6) and apply a HiPIMS sputtering mode to the eccentric target (2) at the same time to start sputtering. S3. During the sputtering process, the angle adjustment mechanism (5) controls the central target (1) to continuously swing or adjust its posture within an angle range of ±5°. S4. During the sputtering process, the sputtering power of the central target (1) and the eccentric target (2) is independently adjusted by the power control component (6).

6. The method for sputtering a high-deep-hole capability TGV seed layer with multi-target configuration according to claim 5, characterized in that: In step S1, the rotational speed of the rotating base (3) is set to 20 revolutions per minute.

7. The method for sputtering a high-deep-hole capability TGV seed layer with multi-target configuration according to claim 5, characterized in that: The TGV structure prepared according to the multi-target configuration high deep-hole capability TGV seed layer sputtering method described above has an aspect ratio ≤10:1.

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