Chip packaging method based on TMV preparation technology, application and product thereof
By employing a chip packaging method involving multiple electroplating and grinding processes, the limitations of aspect ratio and uneven electroplating in traditional TMV fabrication processes have been resolved. This method enables controllable electroplating and high-yield packaging of high-thickness TMVs, thereby improving packaging efficiency.
Patent Information
- Application Number
- CN202511636063.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-10
- Publication Date
- 2026-01-30
AI Technical Summary
Traditional TMV manufacturing processes suffer from limitations in aspect ratio, poor electroplating uniformity, and low yield, making it difficult to produce high-thickness, high-depth TMVs and resulting in low finished product yield.
The process involves multiple electroplating and polishing steps. By depositing a seed layer and dry film on a carrier board, TMV vias are formed and electroplated. Then, molding and polishing are performed, combined with polyimide coating. The height and uniformity of the metal pillar structure are gradually adjusted, and good products are screened before flip-chip bonding.
It significantly improves the problem of uneven electroplating, enhances the controllability and uniformity of the metal pillar structure, improves the yield of finished products, and improves packaging efficiency through panel-level processes.
Smart Images
Figure CN121443085A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of TMV preparation process, and particularly relates to a chip packaging method based on a TMV preparation process, application and product thereof. BACKGROUND
[0002] The traditional TMV preparation process is mainly based on a multi-step process of a carrier plate, dry film photoetching, electroplating and grinding, and typical process steps include: RDL (re-distribution layer) formation: a metal wire layer is made on the carrier plate to provide a conductive path for the TMV structure; dry film attachment: a dry film is attached on the RDL layer to define a hole site; dry film exposure and development: a through-hole morphology is formed by photoetching; TMV electroplating: copper is deposited in the hole to form a vertical conductive column; dry film and seed layer removal; the chip is attached to the carrier plate; packaging molding; grinding: the top end of the TMV is exposed to realize conduction.
[0003] Although the traditional TMV preparation process is mature, it has the following obvious defects: limited dry film aspect ratio: the aspect ratio of the traditional dry film process can usually only reach 10:1, which cannot meet the manufacturing requirements of high thickness and high depth TMV; long electroplating time and poor uniformity: when the size of the metal column structure is large or the depth increases, the non-uniform electroplating rate leads to significant column height difference; limited yield: due to the difficulty in controlling the electroplating and grinding processes of the TMV metal column structure, connection failure and waste problems are prone to occur in the bridge chip packaging.
[0004] Therefore, a chip packaging method based on a TMV preparation process and product thereof are developed to solve the above problems. SUMMARY
[0005] The present application proposes a chip packaging method based on a TMV preparation process, application and product thereof to solve the problems of limited aspect ratio, poor electroplating uniformity and low yield in the existing TMV preparation process.
[0006] The present application achieves the above-mentioned purposes through the following technical solutions: The present application is a chip packaging method based on a TMV preparation process, comprising: A seed layer is deposited on the surface of the carrier plate, a dry film is attached on the upper surface of the seed layer, exposure and development are performed on the dry film through a mask plate to form a TMV hole site, electroplating is performed inside the TMV hole site to form an initial metal column structure in the TMV hole, and the dry film and the seed layer are removed, and the overall structure after the dry film is removed is subjected to plastic encapsulation molding and grinding to expose the top surface of the initial metal column structure, at which time the top surface of the overall structure forms an exposed surface; Polyimide coating, exposure and development are performed on the exposed surface; Afterwards, a new seed layer is deposited on the top surface of the whole structure again, a new dry film is attached to the upper surface of the new seed layer, exposure and development are carried out on the new dry film through a mask plate, a new TMV hole site is formed, electroplating is carried out inside the new TMV hole site, a new metal column structure is formed in the new TMV hole, and the new dry film and the seed layer are removed, and the whole structure after the new dry film and the seed layer are removed is molded by plastic encapsulation, and is ground to expose the top surface of the new metal column structure, the top surface of the new metal column structure is electroplated and welded with a bump, and the TMV chip of a required size is cut after the carrier plate is removed.
[0007] Further, the application also includes an extension step: forming a redistribution layer on the permanent carrier plate; flip-chip the TMV chip to the surface of the permanent carrier plate, and align and weld the bottom bump of the TMV chip with the bump on the redistribution layer; attach a bridge chip between adjacent TMV chips; mold the whole structure after the bridge chip is attached by plastic encapsulation, and grind to expose the top surface of the metal column structure, and then form a top redistribution layer on the top surface of the whole structure after grinding to obtain a chip packaging structure.
[0008] Further, the TMV chip is screened for good quality before or during flip-chip to the surface of the carrier plate.
[0009] Further, when electroplating is carried out inside the TMV hole site, the height of the TMV metal column structure and the uniformity of the metal column structure are adjusted by multiple electroplating.
[0010] Further, the metal column structure is a copper column structure.
[0011] The application also provides an application of a chip packaging method based on a TMV preparation process, and the application of any of the chip packaging methods based on the TMV preparation process in a Panel-level TMV process.
[0012] The application also provides a product prepared by the chip packaging method based on the TMV preparation process.
[0013] The application has the following beneficial effects: The chip packaging method based on the TMV preparation process and the product thereof can freely adjust the height of the TMV metal column structure through multiple electroplating cycles, and significantly improve the problem of uneven electroplating caused by the limitation of the depth-width ratio of the traditional dry film. BRIEF DESCRIPTION OF DRAWINGS
[0014] Figure 1 The chip packaging method based on the TMV preparation process in the embodiments of the application is shown in the flowchart; Figure 2 Flow chart for the extension step in the embodiments of the present application. DETAILED DESCRIPTION
[0015] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are some but not all of the embodiments of the present application. The components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.
[0016] Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. All other embodiments obtained by a person of ordinary skill in the art without creative labor based on the embodiments in the present application are within the scope of protection of the present application.
[0017] In the description of the present application, it should be understood that the terms “upper”, “lower”, “inner”, “outer”, “left”, “right” and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship commonly placed when the product of the present application is used, or the orientation or positional relationship commonly understood by those skilled in the art, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.
[0018] The specific embodiments of the present application will be described in detail below with reference to the drawings.
[0019] As shown in the drawings, a chip packaging method based on a TMV preparation process of the present application comprises: Figure 1 Depositing a seed layer on the surface of a carrier plate, adhering a dry film to the upper surface of the seed layer, exposing and developing on the dry film through a mask plate to form a TMV hole site, electroplating inside the TMV hole site to form an initial metal column structure in the TMV hole, and removing the dry film and the seed layer, plastic encapsulation molding and grinding the overall structure after removing the dry film to expose the top surface of the initial metal column structure, at this time the top surface of the overall structure forms an exposed surface; Performing polyimide coating, exposure and development on the exposed surface; Performing polyimide coating, exposure and development on the exposed surface; Afterwards, a new seed layer is deposited on the top surface of the whole structure again, a new dry film is attached to the upper surface of the new seed layer, exposure and development are performed on the new dry film through a mask plate to form a new TMV hole site, electroplating is performed inside the new TMV hole site, a new metal column structure is formed in the new TMV hole, and the new dry film and the seed layer are removed, the whole structure after the new dry film and the seed layer are removed is molded and ground to expose the top surface of the new metal column structure, a solder bump is electroplated on the top surface of the new metal column structure, and the TMV chip of the required size is cut after the carrier plate is removed.
[0020] The present application can be plated and ground multiple times by designing the mold size, and the plating size is not limited by the film thickness. The previous high aspect ratio can be solved by reducing the dry film thickness and increasing the plating times.
[0021] Figure 1 M0 Seed Dep represents M0 seed layer deposition, Dry Film Lamination represents dry film attachment, Dry Film EXP & DEV represents dry film exposure and development, Cu Plating represents copper electroplating, Dry Film Strip represents dry film stripping, Molding represents molding, Grinding represents grinding, PI Coater & EXP & DEV represents polyimide (PI) coating and development, Bump Plating represents bump electroplating, Glass Debond represents glass plate removal, and PKG Saw represents cutting and separation.
[0022] As shown in FIG. 1, in an embodiment, the present application further includes the following steps: Figure 2 forming a redistribution layer on the permanent carrier plate; flip-chip bonding the TMV chip to the surface of the permanent carrier plate so that the bottom solder bump is aligned and soldered to the solder bump on the redistribution layer; attaching a bridge chip between adjacent TMV chips; molding and grinding the whole structure after the bridge chip is attached to expose the top surface of the metal column structure, and then forming a top redistribution layer on the top surface of the whole structure after grinding to obtain a chip packaging structure.
[0023] In the above embodiment, RDL represents a redistribution layer, TMV Die FC Bond represents flip-chip bonding the TMV chip to the surface of the carrier plate so that the bottom solder bump is aligned and soldered to the solder bump on the redistribution layer, Bridge Die FC Bond represents attaching a bridge chip between adjacent TMV chips, Molding represents molding, Grinding represents grinding, and Top RDL represents forming a redistribution layer on the top layer. Figure 2
[0024] In an embodiment, the TMV chip is screened for good quality before or during flip-chip mounting on the surface of the carrier plate.
[0025] In an embodiment, the height of the TMV metal pillar structure and the uniformity of the metal pillar structure are adjusted by multiple plating when plating inside the TMV hole site.
[0026] In an embodiment, the metal pillar structure is a copper pillar structure.
[0027] In an embodiment, the application also provides an application of a chip packaging method based on a TMV preparation process, which is an application of any of the chip packaging methods based on the TMV preparation process in a Panel-level TMV process.
[0028] In an embodiment, the application also provides a product prepared by the chip packaging method based on the TMV preparation process.
[0029] Compared with the traditional TMV preparation scheme, the application has the following significant advantages: 1. Controllable plating height and improved uniformity: the height of the TMV metal pillar structure can be freely adjusted by multiple plating cycles, which significantly improves the problem of uneven plating caused by the limited depth-width ratio of the traditional dry film; 2. Significant improvement in yield: the TMV chip is screened for good quality before or during flip-chip mounting on the surface of the carrier plate, which avoids the waste of subsequent bridge chip packaging caused by the loss of traditional TMV yield.
[0030] 3. Improved packaging efficiency: Panel-level processing is used to realize parallel processing of multiple chips, which significantly improves the production capacity compared with the traditional piece-by-piece preparation.
[0031] The above only describes the preferred embodiments of the application, and it should be noted that for ordinary skilled persons in the art, several improvements and refinements can be made without departing from the technical principles of the application, and these improvements and refinements should also be considered as the protection scope of the application.
Claims
1. A chip packaging method based on a TMV preparation process, characterized in that, Comprising: Depositing a seed layer on the surface of the carrier plate, attaching a dry film to the upper surface of the seed layer, exposing and developing on the dry film through a mask plate to form TMV hole sites, electroplating inside the TMV hole sites, forming an initial metal column structure in the TMV hole, and removing the dry film and the seed layer, plastic encapsulation molding and grinding the overall structure after removing the dry film, so that the top surface of the initial metal column structure is exposed, at this time the top surface of the overall structure forms an exposed surface; Carrying out polyimide coating, exposure and development on the exposed surface; Then depositing a new seed layer on the top surface of the overall structure at this time, attaching a new dry film to the upper surface of the new seed layer, exposing and developing on the new dry film through a mask plate to form new TMV hole sites, electroplating inside the new TMV hole sites, forming a new metal column structure in the new TMV hole, and removing the new dry film and the seed layer, plastic encapsulation molding and grinding the overall structure after removing the new dry film and the seed layer, so that the top surface of the new metal column structure is exposed, the top surface of the new metal column structure is electroplated with solder bumps, and the TMV chip is cut to the required size after removing the carrier plate.
2. The chip packaging method based on the TMV preparation process according to claim 1, wherein, Further comprising an expansion step: Forming a redistribution layer on the permanent carrier plate; Flip-chip the TMV chip to the surface of the permanent carrier plate, so that the bottom solder bumps are aligned and soldered with the solder bumps on the redistribution layer; Attaching a bridge chip between adjacent TMV chips; Plastic encapsulation molding and grinding the overall structure after attaching the bridge chip, exposing the top surface of the metal column structure, then forming a top redistribution layer on the top surface of the overall structure after grinding, to obtain a chip packaging structure.
3. The chip packaging method based on the TMV preparation process according to claim 2, characterized in that, Before or during flip-chip the TMV chip to the surface of the carrier plate, screening the TMV chip for good products.
4. The chip packaging method based on TMV preparation process according to claim 1, characterized in that, When electroplating inside the TMV hole site, adjust the height and uniformity of the TMV metal column structure through multiple electroplating.
5. The chip packaging method based on TMV preparation process according to claim 1, characterized in that, The metal column structure is a copper column structure.
6. Use of a chip packaging method based on the TMV manufacturing process, characterized in that, Application of any of the chip packaging methods based on the TMV preparation process of claims 1-5 in Panel-level TMV process.
7. A product characterized by, The product is a product prepared by the chip packaging method based on the TMV preparation process according to any of claims 1-5.