Monitoring method and device of rapid thermal annealing equipment, electronic equipment and storage medium
By growing a Ti layer and converting it into a TiN layer, and measuring the resistivity uniformity, the problem of not being able to monitor the temperature uniformity of gallium nitride power devices in the prior art is solved. This enables accurate monitoring of rapid thermal annealing equipment and ensures that the equipment meets design requirements.
Patent Information
- Application Number
- CN202511343517.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-19
- Publication Date
- 2026-02-03
AI Technical Summary
Existing rapid thermal annealing equipment monitoring methods cannot effectively monitor the temperature uniformity of gallium nitride power devices, especially during the metal fusion process after ohmic contact, which cannot be accurately monitored by the RTO process.
By growing a Ti layer and measuring its resistivity uniformity, a TiN layer is formed after rapid thermal annealing using the equipment under test. The resistivity uniformity of the TiN layer is then measured, and the difference between the two values is used to determine whether the equipment meets the design requirements.
It enables temperature uniformity monitoring of rapid thermal annealing equipment for gallium nitride power devices, ensuring that the equipment meets design requirements, simulating the annealing process of real devices, and providing accurate monitoring methods.
Smart Images
Figure CN121463784A_ABST
Abstract
Description
Technical Field
[0001] This disclosure belongs to the field of semiconductor technology, and specifically relates to a monitoring method and apparatus for a rapid thermal annealing equipment, an electronic device, and a storage medium. Background Technology
[0002] Gallium nitride power devices are semiconductor devices that require RTA (Rapid Thermal Annealing) equipment to perform rapid thermal annealing on ohmic resistors during their fabrication process.
[0003] In rapid thermal annealing (RTA) processes, the temperature uniformity of the RTA equipment is crucial to the effectiveness of the process. Therefore, accurate monitoring of the temperature uniformity of the RTA equipment is necessary. Summary of the Invention
[0004] This disclosure provides a monitoring method, apparatus, electronic device, and storage medium for a rapid thermal annealing (RTA) device, capable of accurately monitoring the temperature uniformity of the RTA device. The technical solution is as follows:
[0005] In a first aspect, embodiments of this disclosure provide a method for monitoring a rapid thermal annealing apparatus, including:
[0006] Growth of Ti layer;
[0007] The resistivity uniformity of the Ti layer was measured.
[0008] The Ti layer is rapidly thermally annealed using a rapid thermal annealing equipment to obtain a TiN layer. The annealing parameters of the Ti layer are consistent with the annealing parameters of the gallium nitride power device to be annealed.
[0009] The resistivity uniformity of the TiN layer was measured.
[0010] Based on the resistivity uniformity values of the Ti layer and the TiN layer, determine whether the rapid thermal annealing equipment under test meets the design requirements.
[0011] In one implementation of this disclosure, growing the Ti layer includes:
[0012] The growth power was set to 2000–4000 W, the growth time to 28–35 s, the growth thickness to 50–100 nm, the argon gas introduction rate to 60–80 sccm, the vacuum degree to less than 10 mTorr, and the target-substrate distance to 60–65 mm.
[0013] In another implementation of this disclosure, the resistivity uniformity value of the Ti layer is measured, including:
[0014] At least nine measurement points are selected on the Ti layer;
[0015] Measure the resistivity at each of the aforementioned measurement points;
[0016] The resistivity uniformity value of the Ti layer is calculated based on the resistivity of each measurement point.
[0017] In another implementation of this disclosure, the annealing parameters of the Ti layer include:
[0018] Annealing temperature, annealing time, heating rate, cooling rate, and nitrogen flow rate.
[0019] In another implementation of this disclosure, the resistivity uniformity value of the TiN layer is measured, including:
[0020] At least nine measurement points were selected on the TiN layer;
[0021] Measure the resistivity at each of the aforementioned measurement points;
[0022] The resistivity uniformity value of the TiN layer is calculated based on the resistivity of each measurement point.
[0023] In another implementation of this disclosure, determining whether the rapid thermal annealing equipment under test meets design requirements based on the resistivity uniformity values of the Ti layer and the TiN layer includes:
[0024] The resistivity uniformity difference is calculated, and the resistivity uniformity difference is the difference between the resistivity uniformity value of the Ti layer and the resistivity uniformity value of the TiN layer.
[0025] If the ratio of the resistivity uniformity difference to the resistivity uniformity of the Ti layer is within a set range, the rapid thermal annealing equipment under test meets the design requirements; if the ratio of the resistivity uniformity difference to the resistivity uniformity of the Ti layer is outside the set range, the rapid thermal annealing equipment under test does not meet the design requirements.
[0026] Secondly, embodiments of this disclosure provide a monitoring device for a rapid thermal annealing apparatus, comprising:
[0027] The growth module is used to grow the Ti layer;
[0028] The first measurement module is used to measure the resistivity uniformity value of the Ti layer;
[0029] The annealing module is used to rapidly anneal the Ti layer using a rapid thermal annealing device under test to obtain a TiN layer. The annealing parameters of the Ti layer are consistent with the annealing parameters of the gallium nitride power device to be annealed.
[0030] The second measurement module is used to measure the resistivity uniformity value of the TiN layer;
[0031] The judgment module is used to determine whether the rapid thermal annealing equipment under test meets the design requirements based on the resistivity uniformity values of the Ti layer and the TiN layer.
[0032] In one implementation of this disclosure, the judgment module includes:
[0033] The calculation submodule is used to calculate the resistivity uniformity difference, which is the difference between the resistivity uniformity value of the Ti layer and the resistivity uniformity value of the TiN layer.
[0034] The judgment submodule is used to determine whether the rapid thermal annealing equipment under test meets the design requirements if the ratio of the resistivity uniformity difference to the resistivity uniformity of the Ti layer is within a set range, and whether the rapid thermal annealing equipment under test does not meet the design requirements if the ratio of the resistivity uniformity difference to the resistivity uniformity of the Ti layer is outside the set range.
[0035] Thirdly, embodiments of this disclosure provide an electronic device, including:
[0036] processor;
[0037] Memory used to store processor-executable instructions;
[0038] The processor is configured as follows:
[0039] Perform the monitoring method for the rapid thermal annealing equipment as described in the first aspect.
[0040] Fourthly, embodiments of this disclosure provide a computer-readable storage medium including at least one instruction, which, when executed by a processor, performs the monitoring method for the rapid thermal annealing apparatus described in the first aspect.
[0041] The beneficial effects of the technical solutions provided in this disclosure are:
[0042] The monitoring method provided in this disclosure allows for the monitoring of temperature uniformity in a rapid thermal annealing apparatus. First, a Ti layer is grown, and the resistivity uniformity of the Ti layer is measured. Then, the Ti layer is rapidly thermally annealed using the apparatus under test, and the annealing parameters of the Ti layer are consistent with those of the gallium nitride power device to be annealed. Therefore, the process accurately simulates the conditions of a real gallium nitride power device undergoing rapid thermal annealing using the apparatus. After rapid thermal annealing of the Ti layer, a TiN layer is obtained. Next, the resistivity uniformity of the TiN layer is measured. Finally, based on the resistivity uniformity values of the Ti layer and the TiN layer, it is determined whether the rapid thermal annealing apparatus meets the design requirements. Since the rapid thermal annealing process of the Ti layer accurately simulates the conditions of a real gallium nitride power device during subsequent annealing, comparing the Ti layer before and after rapid thermal annealing allows for the determination of whether the rapid thermal annealing apparatus meets the design requirements. Attached Figure Description
[0043] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0044] Figure 1 This is a flowchart of a monitoring method for a rapid thermal annealing apparatus provided in an embodiment of this disclosure;
[0045] Figure 2 This is a flowchart of another monitoring method for a rapid thermal annealing apparatus provided in this disclosure embodiment;
[0046] Figure 3 This is a schematic diagram of the structure of a monitoring device for a rapid thermal annealing equipment provided in an embodiment of this disclosure;
[0047] Figure 4 This is a structural block diagram of a computer device provided in an embodiment of this disclosure.
[0048] The accompanying drawings have illustrated specific embodiments of this disclosure, which will be described in more detail below. These drawings and descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concepts of this disclosure to those skilled in the art through reference to particular embodiments. Detailed Implementation
[0049] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.
[0050] In related technologies, there exists a type of CMOS power device that also requires a rapid thermal annealing process during its fabrication. Rapid thermal annealing for CMOS power devices primarily occurs after ion implantation. Its purpose is to repair wafer damage caused by high-energy ion implantation, activate implanted impurity atoms, reduce resistivity, and improve the electrical performance and reliability of the transistor. In addition, it can also repair interface defects. For example, rapid thermal annealing of the gate dielectric layer (such as High-k materials) can reduce the SiO2 / Si interface state density and simultaneously suppress interfacial diffusion between the metal gate and the dielectric layer.
[0051] When monitoring the rapid thermal annealing equipment for CMOS power devices, a SiO2 film of a certain thickness is grown on the wafer using the RTO (Rapid Thermal Oxidation) process. The SiO2 film on the wafer is then monitored, and the change in film thickness after annealing is measured using an ellipsometry to determine whether the temperature uniformity of the rapid thermal annealing equipment meets the design requirements.
[0052] However, the monitoring methods described above are not applicable to gallium nitride (GaN) power devices. This is because the rapid thermal annealing process for GaN power devices involves metal-to-metal fusion after ohmic contact, which optimizes ohmic contact performance and forms a low-resistance alloy layer (such as Ti, Al, or TiN), reducing contact resistance. Since the fabrication of GaN power devices does not involve an RTO (Regenerative Thermal Oxidation) process, the rapid thermal annealing equipment used in GaN power device fabrication cannot be monitored using the aforementioned methods.
[0053] To address the aforementioned technical problems, this disclosure provides a monitoring method for rapid thermal annealing equipment, adaptable to gallium nitride power devices. Figure 1 For a flowchart of this monitoring method, see [link / reference]. Figure 1 In this embodiment, the monitoring method includes:
[0054] Step 101: Grow the Ti layer.
[0055] Step 102: Measure the resistivity uniformity of the Ti layer.
[0056] Step 103: Perform rapid thermal annealing on the Ti layer using the rapid thermal annealing equipment to obtain the TiN layer. The annealing parameters of the Ti layer are consistent with the annealing parameters of the gallium nitride power device to be annealed.
[0057] Step 104: Measure the resistivity uniformity of the TiN layer.
[0058] Step 105: Based on the resistivity uniformity values of the Ti layer and the TiN layer, determine whether the rapid thermal annealing equipment under test meets the design requirements.
[0059] The monitoring method provided in this disclosure allows for the monitoring of temperature uniformity in a rapid thermal annealing apparatus. First, a Ti layer is grown, and the resistivity uniformity of the Ti layer is measured. Then, the Ti layer is rapidly thermally annealed using the apparatus under test, and the annealing parameters of the Ti layer are consistent with those of the gallium nitride power device to be annealed. Therefore, the process accurately simulates the conditions of a real gallium nitride power device undergoing rapid thermal annealing using the apparatus. After rapid thermal annealing of the Ti layer, a TiN layer is obtained. Next, the resistivity uniformity of the TiN layer is measured. Finally, based on the resistivity uniformity values of the Ti and TiN layers, it is determined whether the rapid thermal annealing apparatus meets the design requirements. Since the rapid thermal annealing process of the Ti layer accurately simulates the conditions of a real gallium nitride power device during subsequent annealing, comparing the Ti layer before and after rapid thermal annealing allows for the determination of whether the rapid thermal annealing apparatus meets the design requirements.
[0060] This disclosure provides another monitoring method for rapid thermal annealing equipment, adaptable to gallium nitride power devices. Figure 2 For a flowchart of this monitoring method, see [link / reference]. Figure 2 In this embodiment, the monitoring method includes:
[0061] Step 201: Grow the Ti layer.
[0062] In step 201, a silicon wafer is provided, and a Ti layer is grown on the silicon wafer using a PVD (Physical Vapor Deposition) device.
[0063] For example, the growth parameters of the Ti layer are set as follows:
[0064] The growth power was set to 2000–4000 W, the growth time to 28–35 s, the growth thickness to 50–100 nm, the argon gas introduction rate to 60–80 sccm, the vacuum degree to less than 10 mTorr, and the target-substrate distance to 60–65 mm.
[0065] In this embodiment, the growth power is set to 3000W, the growth time is set to 30s, the growth thickness is set to 60nm, the argon gas injection rate is set to 70sccm, the vacuum degree is set to 6mTorr, and the target-substrate distance is set to 62mm.
[0066] Setting the growth parameters of the Ti layer to the values above facilitates the measurement of its resistivity uniformity and allows for control over the thickness of the subsequently obtained TiN layer, thus making it easier to measure the resistivity uniformity of the TiN layer.
[0067] Step 202: Measure the uniformity value of the Ti layer thickness.
[0068] In this embodiment, step 202 includes the following steps:
[0069] Step 2021: Select at least 9 measurement points on the Ti layer.
[0070] For example, an outer circle line and an inner circle line are selected on the Ti layer. The diameter of the outer circle line is larger than that of the inner circle line. Both the outer circle line and the inner circle line are coaxial with the Ti layer, and the distance between the outer circle line and the outer edge of the Ti layer is at least 5 mm. Four measurement points are evenly selected circumferentially on the outer circle line, four measurement points are evenly selected circumferentially on the inner circle line, and one measurement point is selected at the center of the Ti layer.
[0071] It is worth noting that if more measurement points are required, the number of measurement points on the outer circle line and the number of measurement points on the inner circle line can be appropriately increased.
[0072] Step 2022: Measure the film thickness at each measurement point.
[0073] Step 2023: Calculate the uniformity value of the Ti layer thickness based on the film thickness at each measurement point.
[0074] The uniformity of the Ti layer thickness is calculated using the following formula:
[0075]
[0076] Where D% is the film thickness uniformity value, D max D represents the maximum film thickness at each measurement point. min This represents the minimum film thickness at each measurement point.
[0077] Step 203: Determine whether the Ti layer meets the design requirements based on the uniformity value of the Ti layer thickness.
[0078] If the uniformity of the Ti layer thickness is less than 2%, then the uniformity of the Ti layer thickness meets the design requirements, and step 204 is executed. If the uniformity of the Ti layer thickness is greater than 2%, then the uniformity of the Ti layer thickness does not meet the design requirements, and step 201 is executed again.
[0079] Step 204: Measure the resistivity uniformity value of the Ti layer.
[0080] In this embodiment, step 204 includes the following steps:
[0081] Step 2041: Select at least 9 measurement points on the Ti layer.
[0082] The measurement point selected in step 2041 can be either the measurement point selected in step 2021 or a newly selected measurement point; this disclosure does not impose any restrictions on this.
[0083] If the measurement point in step 2041 is a newly selected measurement point, then the method for selecting the measurement point in step 2041 can be the same as the method for selecting the measurement point in step 2021, and will not be repeated here.
[0084] Step 2042: Measure the resistivity at each measurement point.
[0085] For example, the resistivity at each measurement point is measured using a four-probe thin film thickness tester.
[0086] Step 2043: Calculate the resistivity uniformity value of the Ti layer based on the resistivity of each measurement point.
[0087] The resistivity uniformity of the Ti layer is calculated using the following formula:
[0088]
[0089] Where U% is the resistivity uniformity value, R max R represents the maximum resistivity at each measurement point. min This represents the minimum resistivity at each measurement point.
[0090] Step 205: Perform rapid thermal annealing on the Ti layer using the rapid thermal annealing equipment to obtain the TiN layer. The annealing parameters of the Ti layer are consistent with the annealing parameters of the gallium nitride power device to be annealed.
[0091] For example, the annealing parameters of the Ti layer include: annealing temperature, annealing time, heating rate, cooling rate, and nitrogen flow rate.
[0092] Step 206: Measure the resistivity uniformity of the TiN layer.
[0093] The method for measuring the resistivity uniformity of the TiN layer is the same as that for the Ti layer, and will not be repeated here.
[0094] Step 207: Based on the resistivity uniformity values of the Ti layer and the TiN layer, determine whether the rapid thermal annealing equipment under test meets the design requirements.
[0095] In step 207, the resistivity uniformity difference is calculated, which is the difference between the resistivity uniformity value of the Ti layer and the resistivity uniformity value of the TiN layer.
[0096] If the ratio of the resistivity uniformity difference to the resistivity uniformity of the Ti layer is within the set range, the rapid thermal annealing equipment under test meets the design requirements. If the ratio of the resistivity uniformity difference to the resistivity uniformity of the Ti layer is outside the set range, the rapid thermal annealing equipment under test does not meet the design requirements.
[0097] In this embodiment, the set range is 3%.
[0098] The results of the experiment are shown in Table 1.
[0099]
[0100] Table 1
[0101] In Table 1, columns 2 to 5 contain data corresponding to the Ti layer, and columns 6 to 9 contain data corresponding to the TiN layer.
[0102] Figure 3 This is a schematic diagram of the structure of a monitoring device for a rapid thermal annealing apparatus provided in an embodiment of this disclosure. This monitoring device for the rapid thermal annealing apparatus can be implemented as all or part of a computer device through software, hardware, or a combination of both. See also... Figure 3 The monitoring device for the rapid thermal annealing equipment includes: a growth module 310, a first measurement module 320, an annealing module 330, a second measurement module 340, and a judgment module 350.
[0103] Among them, the growth module 310 is used to grow the Ti layer.
[0104] The first measurement module 320 is used to measure the resistivity uniformity value of the Ti layer.
[0105] Annealing module 330 is used to perform rapid thermal annealing on Ti layer through rapid thermal annealing equipment under test to obtain TiN layer. The annealing parameters of Ti layer are consistent with the annealing parameters of gallium nitride power device to be annealed.
[0106] The second measurement module 340 is used to measure the resistivity uniformity value of the TiN layer.
[0107] The judgment module 350 is used to determine whether the rapid thermal annealing equipment under test meets the design requirements based on the resistivity uniformity values of the Ti layer and the TiN layer.
[0108] In this embodiment, the judgment module 350 includes a calculation submodule 351 and a judgment submodule 352.
[0109] The calculation submodule 351 is used to calculate the resistivity uniformity difference, which is the difference between the resistivity uniformity value of the Ti layer and the resistivity uniformity value of the TiN layer.
[0110] The judgment submodule 352 is used to determine whether the rapid thermal annealing equipment under test meets the design requirements if the ratio of the resistivity uniformity difference to the resistivity uniformity of the Ti layer is within the set range, and whether the rapid thermal annealing equipment under test does not meet the design requirements if the ratio of the resistivity uniformity difference to the resistivity uniformity of the Ti layer is outside the set range.
[0111] It should be noted that the monitoring device provided in the above embodiments is only illustrated by the division of the above functional modules. In actual applications, the above functions can be assigned to different functional modules as needed, that is, the internal structure of the device can be divided into different functional modules to complete all or part of the functions described above. In addition, the monitoring device and the monitoring method embodiments provided in the above embodiments belong to the same concept, and the specific implementation process can be found in the method embodiments, which will not be repeated here.
[0112] Figure 4 This is a structural block diagram of a computer device provided in an embodiment of this disclosure. The computer device 400 includes a central processing unit (CPU) 401, a system memory 404 including random access memory (RAM) 402 and read-only memory (ROM) 403, and a system bus 405 connecting the system memory 404 and the CPU 401. The computer device 400 also includes a basic input / output system (I / O system) 406 that facilitates the transfer of information between various devices within the computer, and a mass storage device 407 for storing an operating system 413, application programs 414, and other program modules 415.
[0113] The basic input / output system 406 includes a display 408 for displaying information and an input device 409 for user input, such as a mouse or keyboard. Both the display 408 and the input device 409 are connected to the central processing unit 401 via an input / output controller 410 connected to the system bus 405. The basic input / output system 406 may also include the input / output controller 410 for receiving and processing input from multiple other devices such as a keyboard, mouse, or electronic stylus. Similarly, the input / output controller 410 also provides output to a display screen, printer, or other types of output devices.
[0114] Mass storage device 407 is connected to central processing unit 401 via a mass storage controller (not shown) connected to system bus 405. Mass storage device 407 and its associated computer-readable media provide non-volatile storage for computer device 400. That is, mass storage device 407 may include computer-readable media (not shown) such as hard disk or CD-ROM drive.
[0115] Without loss of generality, computer-readable media can include computer storage media and communication media. Computer storage media include volatile and non-volatile, removable and non-removable media implemented using any method or technology for storing information such as computer-readable instructions, data structures, program modules, or other data. Computer storage media include RAM, ROM, EPROM, EEPROM, flash memory or other solid-state storage technologies, CD-ROM, DVD or other optical storage, magnetic tape cassettes, magnetic tape, disk storage, or other magnetic storage devices. Of course, those skilled in the art will recognize that computer storage media are not limited to the above-mentioned types. The system memory 404 and mass storage device 407 described above can be collectively referred to as memory.
[0116] According to various embodiments of this disclosure, the computer device 400 can also be connected to a remote computer on a network, such as the Internet. That is, the computer device 400 can be connected to a network 412 via a network interface unit 411 connected to a system bus 405, or the network interface unit 411 can be used to connect to other types of networks or remote computer systems (not shown).
[0117] The memory also includes one or more programs, which are stored in the memory. The central processing unit 401 implements these programs by executing them. Figure 1 or Figure 2 The monitoring method shown.
[0118] In exemplary embodiments, a non-transitory computer-readable storage medium including instructions is also provided, such as a memory including instructions that can be executed by a processor of a computer device to perform the monitoring methods shown in the various embodiments of this disclosure. For example, the non-transitory computer-readable storage medium may be a ROM, random access memory (RAM), CD-ROM, magnetic tape, floppy disk, and optical data storage device, etc.
[0119] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” “third,” and similar terms used in this patent application specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms “an” or “a” and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms “comprising” or “including” and similar terms mean that the elements or objects preceding “comprising” or “including” encompass the elements or objects listed following “comprising” or “including” and their equivalents, and do not exclude other elements or objects. The terms “connected” or “linked” and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms “upper,” “lower,” “left,” “right,” etc., are used only to indicate relative positional relationships; when the absolute position of the described objects changes, the relative positional relationship may also change accordingly.
[0120] The above description is merely an optional embodiment of this disclosure and is not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.
Claims
1. A monitoring method for a rapid thermal annealing equipment, characterized in that, include: Growth of Ti layer; The resistivity uniformity of the Ti layer was measured. The Ti layer is rapidly thermally annealed using a rapid thermal annealing equipment to obtain a TiN layer. The annealing parameters of the Ti layer are consistent with the annealing parameters of the gallium nitride power device to be annealed. The resistivity uniformity of the TiN layer was measured. Based on the resistivity uniformity values of the Ti layer and the TiN layer, determine whether the rapid thermal annealing equipment under test meets the design requirements.
2. The monitoring method according to claim 1, characterized in that, The Ti layer is grown, including: The growth power was set to 2000–4000 W, the growth time to 28–35 s, the growth thickness to 50–100 nm, the argon gas introduction rate to 60–80 sccm, the vacuum degree to less than 10 mTorr, and the target-substrate distance to 60–65 mm.
3. The monitoring method according to claim 1, characterized in that, The resistivity uniformity of the Ti layer was measured, including: At least nine measurement points are selected on the Ti layer; Measure the resistivity at each of the aforementioned measurement points; The resistivity uniformity value of the Ti layer is calculated based on the resistivity of each measurement point.
4. The monitoring method according to claim 1, characterized in that, The annealing parameters of the Ti layer include: Annealing temperature, annealing time, heating rate, cooling rate, and nitrogen flow rate.
5. The monitoring method according to claim 1, characterized in that, The resistivity uniformity of the TiN layer was measured, including: At least nine measurement points were selected on the TiN layer; Measure the resistivity at each of the aforementioned measurement points; The resistivity uniformity value of the TiN layer is calculated based on the resistivity of each measurement point.
6. The monitoring method according to claim 1, characterized in that, Based on the resistivity uniformity values of the Ti layer and the TiN layer, determine whether the rapid thermal annealing equipment under test meets the design requirements, including: The resistivity uniformity difference is calculated, and the resistivity uniformity difference is the difference between the resistivity uniformity value of the Ti layer and the resistivity uniformity value of the TiN layer. If the ratio of the resistivity uniformity difference to the resistivity uniformity of the Ti layer is within a set range, the rapid thermal annealing equipment under test meets the design requirements; if the ratio of the resistivity uniformity difference to the resistivity uniformity of the Ti layer is outside the set range, the rapid thermal annealing equipment under test does not meet the design requirements.
7. A monitoring device for a rapid thermal annealing equipment, characterized in that, include: The growth module is used to grow the Ti layer; The first measurement module is used to measure the resistivity uniformity value of the Ti layer; The annealing module is used to rapidly anneal the Ti layer using a rapid thermal annealing device under test to obtain a TiN layer. The annealing parameters of the Ti layer are consistent with the annealing parameters of the gallium nitride power device to be annealed. The second measurement module is used to measure the resistivity uniformity value of the TiN layer; The judgment module is used to determine whether the rapid thermal annealing equipment under test meets the design requirements based on the resistivity uniformity values of the Ti layer and the TiN layer.
8. The monitoring device according to claim 7, characterized in that, The judgment module includes: The calculation submodule is used to calculate the resistivity uniformity difference value, which is the difference between the resistivity uniformity value of the Ti layer and the resistivity uniformity value of the TiN layer. The judgment submodule is used to determine whether the rapid thermal annealing equipment under test meets the design requirements if the ratio of the resistivity uniformity difference to the resistivity uniformity of the Ti layer is within a set range, and whether the rapid thermal annealing equipment under test does not meet the design requirements if the ratio of the resistivity uniformity difference to the resistivity uniformity of the Ti layer is outside the set range.
9. An electronic device, characterized in that, include: processor; Memory used to store processor-executable instructions; The processor is configured as follows: The monitoring method for the rapid thermal annealing equipment as described in any one of claims 1 to 6 shall be implemented.
10. A computer-readable storage medium, characterized in that, The computer-readable storage medium includes at least one instruction, which, when executed by a processor, performs the monitoring method for the rapid thermal annealing apparatus according to any one of claims 1 to 6.