Simulation model construction method, electronic equipment and storage medium

Abstract

The invention discloses a simulation model construction method, electronic equipment and a storage medium, and the method comprises the steps: obtaining the determination information of a probe card model, and generating the probe card model based on the determination information; acquiring a relative distance between the simulated heat source and the probe card model; determining a target position of the simulated heat source in a preset initial probe station model based on the relative distance; in the initial probe station model, adjusting the position of the simulated heat source to a target position to obtain a final probe station model; and the probe card model and the final probe station model are assembled, so that the probe card model is opposite to the simulation heat source, the probe card model, the simulation heat source and the probe station main body model jointly form a simulation chamber, and a simulation model is obtained. The probe card model, the simulation heat source and the probe station main body model jointly form the simulation chamber, so that the simulation model can fit an actual test scene, and the result of a simulation experiment performed by adopting the simulation model is more accurate.

Description

Technical Field

[0001] This invention relates to the field of probe card technology, specifically to a method for constructing a simulation model, an electronic device, and a storage medium. Background Technology

[0002] Probe cards are core components in semiconductor wafer testing, undertaking the critical tasks of signal transmission and electrical performance detection between testing equipment and wafer chips. Their performance stability directly determines the accuracy and efficiency of wafer testing results. During actual testing, probe cards can deform due to heat, affecting test results. Therefore, the design of probe cards requires simulation experiments to determine temperature field data and mechanical simulation results under heat, and to optimize the probe card's structural design.

[0003] In existing technologies, simulation experiments are generally conducted by directly heating the entire probe card model using a simulated heat source.

[0004] However, in actual testing, the probe card does not completely fit the heat source, so the results of simulation experiments are not accurate enough in the existing technology. Summary of the Invention

[0005] To address the shortcomings of existing technologies, this application provides a method for constructing a simulation model, an electronic device, and a storage medium. By assembling a probe card model with a final probe station model, so that the probe card model is opposite to the simulated heat source, the probe card model, the simulated heat source, and the main body model of the probe station together form a simulation chamber, thereby obtaining a simulation model. This simulation model can closely match the actual test scenario, thus making the results of simulation experiments using this simulation model more accurate.

[0006] To address the above problems, the present invention provides the following technical solution: In a first aspect, embodiments of this application provide a method for constructing a simulation model, comprising: obtaining determination information of a probe card model, and generating a probe card model based on the determination information of the probe card model; Obtain the relative distance between the simulated heat source and the probe card model; The target position of the simulated heat source is determined in a preset initial probe station model based on the relative distance. The initial probe station model includes the simulated heat source and a probe station main body model. The simulated heat source is assembled with the probe station main body model, and the upper surface of the simulated heat source is lower than the upper surface of the probe station main body model. In the initial probe station model, the position of the simulated heat source is adjusted to the target position to obtain the final probe station model; The probe card model is assembled with the final probe station model so that the probe card model is opposite the simulated heat source. The probe card model, the simulated heat source, and the probe station main body model together form a simulation chamber, thereby obtaining a simulation model.

[0007] Secondly, embodiments of this application provide an electronic device, the electronic device comprising: At least one processor; and, A memory communicatively connected to the at least one processor; wherein, The memory stores instructions that can be executed by the at least one processor to enable the at least one processor to perform the method for constructing the simulation model as described in the first aspect.

[0008] Thirdly, embodiments of this application provide a computer-readable storage medium storing an executable program, which is executed by a processor to implement the simulation model construction method as described in the first aspect.

[0009] This application provides a method for constructing a simulation model, an electronic device, and a storage medium. This application assembles a probe card model with a final probe station model so that the probe card model is opposite to the simulated heat source. The probe card model, the simulated heat source, and the main body model of the probe station together form a simulation chamber, thereby obtaining a simulation model. This simulation model can fit the actual test scenario, thus making the simulation experiment results using this simulation model more accurate. Attached Figure Description

[0010] Figure 1 This is a flowchart illustrating the method for constructing a simulation model provided in this application embodiment.

[0011] Figure 2 This is a top view structural diagram of the simulation model provided in the embodiments of this application.

[0012] Figure 3 This is the first implementation of the simulation model. Figure 2 Sectional view at section line AA.

[0013] Figure 4 This is an exploded view of the first embodiment of the simulation model provided in this application.

[0014] Figure 5 This is the second implementation of the simulation model. Figure 2 Sectional view at section line AA.

[0015] Figure 6AThis is a temperature field distribution diagram of the side of the mechanical reinforcement model away from the wafer model in a heat conduction simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application.

[0016] Figure 6B This is a temperature field distribution diagram of the side of the mechanical reinforcement model close to the wafer model in a heat conduction simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application.

[0017] Figure 6C This is a temperature field distribution diagram of the side of the circuit board model away from the wafer model in a heat conduction simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application.

[0018] Figure 6D This is a temperature field distribution diagram of the side of the circuit board model closest to the wafer model in a heat conduction simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application.

[0019] Figure 7A This is a stress distribution diagram of the side of the circuit board model away from the wafer model in a mechanical simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application.

[0020] Figure 7B This is a stress distribution diagram of the side of the circuit board model closest to the wafer model in a mechanical simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application.

[0021] Figure 7C This is a diagram showing the deformation distribution of the side of the mechanical reinforcement model away from the wafer model in a mechanical simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application.

[0022] Figure 7D This is a diagram showing the deformation distribution of the side of the mechanical reinforcement model closest to the wafer model in a mechanical simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application.

[0023] Figure 7E This is a cross-sectional view of the mechanical reinforcement model in the mechanical simulation experiment of the probe card implemented using the simulation model provided in the embodiments of this application.

[0024] Figure 7F This is a diagram showing the deformation distribution of the side of the circuit board model away from the wafer model in a mechanical simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application.

[0025] Figure 7G This is a diagram showing the deformation distribution of the side of the circuit board model closest to the wafer model in a mechanical simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application.

[0026] Figure 7H This is a cross-sectional view of the circuit board model in the mechanical simulation experiment of the probe card implemented using the simulation model provided in the embodiments of this application.

[0027] Figure 8 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application.

[0028] Figure 9 This is a structural block diagram of a computer-readable storage medium provided in an embodiment of this application. Detailed Implementation

[0029] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0030] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "multiple" means two or more, unless otherwise explicitly specified.

[0031] This application provides a method for constructing a simulation model, an electronic device, and a storage medium. By assembling a probe card model with a final probe station model, so that the probe card model is opposite to the simulated heat source, the probe card model, the simulated heat source, and the main body model of the probe station together form a simulation chamber, thereby obtaining a simulation model. This simulation model can fit the actual test scenario, thus making the results of simulation experiments using the simulation model more accurate.

[0032] The simulation model construction method of this application is used for designing or simulating test probe cards, and is applied in the fields of probe card testing, wafer testing, or probe testing. Probe cards belong to quantitative testing equipment.

[0033] The method for constructing the simulation model provided in this application will be described in detail below with reference to the accompanying drawings.

[0034] Please see Figure 1 , Figure 1 This is a flowchart illustrating the method for constructing a simulation model provided in an embodiment of this application. For example... Figure 1 As shown, the method for constructing the simulation model includes steps S100 to S500.

[0035] Step S100: Obtain the determination information of the probe card model, and generate the probe card model based on the determination information of the probe card model.

[0036] In some implementations, the probe card model includes multiple component models. In this case, step S100 includes steps S110 to S130.

[0037] Step S110: Obtain the identifier of each component model of the probe card model.

[0038] The identifiers of the component models correspond one-to-one with the component models themselves.

[0039] Optionally, the identification of the component model includes the component model number.

[0040] Step S120: Obtain each component model from the preset component library based on the identifier of each component model.

[0041] The preset parts library includes model files for all available parts models.

[0042] Step S130: Obtain the component model assembly relationship, and assemble all component models based on the component model assembly relationship to obtain the probe card model.

[0043] In some implementations, the component model assembly relationship input by the user is directly obtained, and all component models are assembled based on the component model assembly relationship to obtain the probe card model.

[0044] In some implementations, multiple component models are of different types. In this case, the type of each component model is determined based on its identifier and a pre-defined correspondence between the identifier and type. This determines the type combination of all component models. Then, the assembly relationship of the component models corresponding to this type combination is obtained, and all component models are assembled based on this assembly relationship to obtain the probe card model. This method improves the flexibility of generating probe card models, enabling the generation of corresponding probe card models according to different user needs.

[0045] The assembly relationship of the component models includes the assembly position of each component model.

[0046] In some implementations, the information for determining the probe card model is the model file of the probe card model. In this case, step S100 includes step S140.

[0047] Step S140: Obtain the determination information of the probe card model, and parse the determination information of the probe card model to obtain the probe card model.

[0048] Step S200: Obtain the relative distance between the simulated heat source and the probe card model.

[0049] Optionally, the relative distance can range from 5 millimeters (mm) to 20 millimeters. For example, the relative distance can be 5 mm, 6 mm, 10 mm, 15 mm, 18 mm, or 10 mm.

[0050] Step S300: Determine the target location of the simulated heat source in the preset initial probe station model based on the relative distance.

[0051] The initial probe station model includes a simulated heat source and a probe station main body model. The simulated heat source is assembled with the probe station main body model, and the upper surface of the simulated heat source is lower than the upper surface of the probe station main body model.

[0052] Please see Figure 2 and Figure 3 , Figure 2 This is a top view structural diagram of the simulation model provided in the embodiments of this application. Figure 3 This is the first implementation of the simulation model. Figure 2 A sectional view at section line AA. (See example.) Figure 2 and Figure 3 As shown, simulation model 1 includes probe station model 10 and probe card model 20. Probe station model 20 is the final probe station model. The only difference between the initial probe station model and the final probe station model is that the position of the simulated heat source 11 may be different.

[0053] like Figure 3 As shown, in some embodiments, the probe station model 10 includes a simulated heat source 11 and a probe station body model 12. The upper surface A1 of the simulated heat source 11 is lower than the upper surface A2 of the probe station body model 12.

[0054] In some implementations, the simulated heat source is a test chuck model, which is a three-dimensional model of the device used to test the probe card.

[0055] Optionally, the probe station body model 12 is a geometry with a simulated hole D, and the simulated heat source 11 is located in the simulated hole D and divides the simulated hole D into two completely isolated parts.

[0056] For example, the probe station body model 12 is a cuboid with simulated holes D. The simulated heat source 11 is a cylinder.

[0057] In existing technologies, the probe station body often includes a large number of complex testing devices, and constructing a probe station body model according to its actual structure would significantly increase the computational load. Furthermore, the test chuck also often comprises numerous parts. This application simplifies the probe station body model and the simulated heat source, thereby greatly reducing the computational load for simulation experiments using this model.

[0058] In some implementations, the relative distance is a numerical value. The upper surface of the simulated heat source is made parallel to the upper surface of the initial probe station model, with the distance being a relative distance, thus determining the target location of the simulated heat source. This method allows the simulated heat source to be directly aligned with the probe card model to be placed on the upper surface of the probe station model, thereby simplifying the simulation model and reducing the computational load of the simulation experiment.

[0059] Optionally, the target location of the simulated heat source can be a specified point on the simulated heat source or a target location on a specified plane.

[0060] In other embodiments, the relative distance is a distance vector from a designated plane on the simulated heat source to a preset standard point. In this case, the target position of the simulated heat source is determined based on this distance vector, the designated plane on the simulated heat source, and the preset standard point. The standard point is used to identify the position of the probe card model to be assembled with the final probe station model. In this situation, the upper surface of the simulated heat source may not be parallel to the upper surface of the initial probe station model, thus the simulated heat source may not be directly facing the probe card model. This allows for flexible adjustment of the target position of the simulated heat source according to user needs.

[0061] Step S400: In the initial probe station model, adjust the position of the simulated heat source to the target position to obtain the final probe station model.

[0062] Step S500: Assemble the probe card model with the final probe station model so that the probe card model is opposite to the simulated heat source. The probe card model, the simulated heat source and the probe station main body model together form a simulation chamber, thereby obtaining the simulation model.

[0063] In some implementations, the probe card model is placed on the upper surface of the final probe station model so that the probe card model is opposite to the simulated heat source. The probe card model, the simulated heat source, and the main probe station model together form a simulation chamber, thereby obtaining a simulation model.

[0064] For example, the probe card model 20 is placed on the upper surface of the final probe station model 20 so that the probe card model 20 is opposite to the simulated heat source 11. The probe card model 20, the simulated heat source 11, and the probe station main body model 12 together form a simulated chamber 30, thereby obtaining the simulation model 1. Here, the probe card model 20 and the probe station model 20 are defined to be in rigid contact.

[0065] Please see Figure 4 , Figure 4 This is an exploded view of the first embodiment of the simulation model provided in this application. (See attached diagram.) Figure 4As shown, in some embodiments, the probe card model 20 includes a mechanical reinforcement model 21 and a circuit board model 22. The mechanical reinforcement model 21 is assembled with the circuit board model 22, and the distance between the circuit board model 22 and the simulated heat source 11 is less than the distance between the mechanical reinforcement model 21 and the simulated heat source 11.

[0066] In existing technologies, probe cards include electrical probes, and the mechanical simulation results for each probe are typically calculated based on the elastic modulus of each probe. However, the computational load of existing technologies is enormous. The inventors discovered that the probes are made of metal, while the circuit boards and mechanical reinforcements are made of flame-retardant resin materials (e.g., FR-4 grade materials). During the heating process of the probe card, the deformation generated by the circuit board or mechanical reinforcement is far greater than the deformation generated by the probe itself. Therefore, to reduce the computational load, the probe card model 20 is further composed of a mechanical reinforcement model 21 and a circuit board model 22.

[0067] In some implementations, the circuit board model is circular or approximately circular, with a diameter of 400 mm to 500 mm.

[0068] In some embodiments, the mechanical reinforcement model is circular or approximately circular in shape, with a diameter of 450 mm to 600 mm.

[0069] Furthermore, the probe card model also includes a substrate model and a probe model. The assembly sequence of the various component models of the probe card model is as follows: mechanical reinforcement model, circuit board model, substrate model, and probe model. In this way, the structure of the probe card model can be made closer to the structure of a real probe card, thereby improving the accuracy of experimental results.

[0070] In some implementations, there are multiple probe models, such as 5,000 or 10,000 probe models. The probe models are perpendicular to the substrate model.

[0071] In some embodiments, the substrate model is circular or approximately circular in shape, with a diameter of 320 mm to 300 mm.

[0072] Please see Figure 5 , Figure 5 This is the second implementation of the simulation model. Figure 2 A sectional view at section line AA. (See example.) Figure 5 As shown, the final probe station model 10 further includes a wafer model 13, which is located above the simulated heat source 11 and below the probe card model 20. In some embodiments, the wafer model 13 is simulated to be placed on the simulated heat source 11, and the position of the wafer model 13 changes when the position of the simulated heat source 11 changes.

[0073] like Figure 5 As shown, in some embodiments, the probe card model 20 includes a mechanical reinforcement model 21, a circuit board model 22, a substrate model 23, and a probe model 24. The assembly order of the multiple component models of the probe card model 20 is mechanical reinforcement model 21, circuit board model 22, substrate model 23, and probe model 24. During the simulation experiment, the positions of the simulated heat source 11 and the wafer model 13 can be set so that the probe model 24 directly contacts the wafer model 13.

[0074] By using the above methods, the simulation model can more closely resemble the actual test scenario, thus making the results of simulation experiments conducted using this simulation model more accurate.

[0075] In some embodiments, the method further includes steps S610 to S620. Steps S610 to S620 are used to implement a thermal conduction simulation experiment of the probe card.

[0076] Step S610: Obtain the actual temperature data and thermal conductivity data of the probe card.

[0077] The actual temperature data of the probe card is obtained by measuring the temperature of the probe card during the actual test.

[0078] Optionally, the probe card includes multiple components. These components include mechanical reinforcements, circuit boards, substrates, and probes. The thermal conductivity data includes the thermal conductivity of each component of the probe card.

[0079] Step S620: Based on the simulation model, actual temperature data and thermal conductivity coefficient data, conduct a heat conduction simulation experiment including the first heat transfer mode and the second heat transfer mode to obtain temperature field data.

[0080] The first heat transfer method is a direct contact between the probe card model and the probe station model. The second heat transfer method is an indirect heat transfer from the simulated heat source to the probe card model through the simulated chamber.

[0081] In some implementations, step S620 includes steps S621 to S622.

[0082] Step S621: Determine the steady-state temperature from the actual temperature data as the boundary condition in the heat conduction simulation experiment.

[0083] Steady-state temperature refers to the stable temperature at which the temperature distribution at various points in an object no longer changes with time, after reaching dynamic equilibrium.

[0084] In some implementations, during actual testing, the probe card is assembled with the probe station to form a chamber, and the temperature detected within the chamber is the experimental temperature. At one experimental temperature, the temperature of each component of the probe card is measured to obtain the steady-state temperature of each component.

[0085] Step S622: Conduct a heat conduction simulation experiment based on actual temperature data and simulation model, including the first heat transfer mode and the second heat transfer mode, to obtain temperature field data under boundary conditions.

[0086] In some implementations, in finite element analysis software, actual temperature data is imported into a thermal simulation calculation model. Based on the actual temperature data and the simulation model, a heat conduction simulation experiment including a first heat transfer mode and a second heat transfer mode is conducted to obtain temperature field data under boundary conditions.

[0087] In some implementations, the heat transfer sequence in the first heat transfer method is: simulated heat source, wafer model, probe model, substrate model, circuit board model, and mechanical reinforcement model.

[0088] In some implementations, the heat transfer sequence in the second heat transfer method is: simulated heat source, wafer model, simulated chamber, probe model, substrate model, circuit board model, and mechanical reinforcement model.

[0089] Optionally, in the thermal simulation calculation model, calculations can be performed simultaneously based on the first heat transfer method and the second heat transfer method to obtain temperature field data.

[0090] In some embodiments, the probe card includes a mechanical reinforcement and a circuit board, and the method further includes steps S630 to S640.

[0091] Step S630: During the testing of the probe card, the temperature of multiple points on the surface of the mechanical reinforcement of the probe card is detected to obtain multiple first detection temperatures, and the temperature of multiple points on the surface of the circuit board is detected to obtain multiple second detection temperatures.

[0092] In some implementations, during the testing of the probe card, when the temperature detected by the first temperature detection device of the probe station assembled with the probe card is the experimental temperature, the second temperature detection device is controlled to detect the temperature at multiple points on the surface of the mechanical reinforcement of the probe card during the testing process to obtain multiple first detection temperatures, and to detect the temperature at multiple points on the surface of the circuit board to obtain multiple second detection temperatures.

[0093] The first temperature detection device of the probe station is used to detect the temperature inside the cavity.

[0094] Step S640: Determine the actual temperature data of the probe card based on all first detection temperatures and all second detection temperatures.

[0095] In some implementations, step S640 includes steps S641 to S642.

[0096] Step S641: Determine the average value of all first detected temperatures as the steady-state temperature of the mechanical reinforcement in the actual temperature data.

[0097] Step S642: Determine the average value of all second-detected temperatures as the steady-state temperature of the circuit board in the actual temperature data, thereby obtaining the actual temperature data.

[0098] Using the above method, the steady-state temperature in the actual temperature data is calculated based on the real detected temperature, which can improve the accuracy of the temperature field data.

[0099] In some embodiments, after step S620, the method further includes steps S710 to S740. Steps S710 to S740 are used to perform mechanical simulation experiments on the probe card.

[0100] Step S710: Obtain and calculate the equivalent modulus of the circuit board based on the number of conductor layers, the thickness of each conductor layer, the number of dielectric layers, and the thickness of each dielectric layer of the circuit board obtained from the probe card.

[0101] In existing technologies, probe cards consist of a circuit board and probes. Generally, the mechanical simulation results for each probe are calculated based on its elastic modulus. However, the computational load of existing technologies is enormous. The inventors discovered that the probes are made of metal, while the circuit board is made of flame-retardant resin (e.g., FR-4 grade material). During the heating process of the probe card, the deformation of the circuit board is far greater than that of the probes themselves. The deformation of the circuit board is the main factor affecting the change in probe flatness. Therefore, to reduce the computational load, the deformation of the circuit board can be calculated instead of the probe deformation, without affecting the accuracy of the calculation.

[0102] In some implementations, the circuit board is composed of multiple alternating layers of conductor and dielectric layers, with the conductor layers forming a circuit network on the dielectric layers. To simplify calculations, instead of calculating the exact modulus of the circuit board, its equivalent modulus can be calculated, and the equivalent modulus is used to characterize the mechanical properties of the circuit board. This approach reduces computational load, improves computational efficiency, and does not compromise the accuracy of the calculations.

[0103] Alternatively, the conductor layer may be made of materials such as copper, gold, or silver.

[0104] Optionally, the dielectric layer is made of a flame-retardant resin material, such as an FR-4 grade material.

[0105] By acquiring and calculating the equivalent modulus of the circuit board based on the number of conductor layers, the thickness of each conductor layer, the number of dielectric layers, and the thickness of each dielectric layer, and based on the simulation model, equivalent modulus, material parameters, boundary conditions, and temperature field data, the mechanical simulation results of the simulation model under the constraints of the boundary conditions and temperature field data can be calculated. The mechanical properties of the circuit board can be characterized by the equivalent modulus, and there is no need to calculate the mechanical simulation results of each probe, which greatly reduces the amount of calculation and improves the calculation efficiency.

[0106] When the probe card includes a circuit board and mechanical reinforcement, only the deformation of the circuit board and mechanical reinforcement can be calculated.

[0107] In some implementations, step S710 includes steps S711 to S715.

[0108] Step S711: Obtain the number of conductor layers, the thickness of each conductor layer, the number of dielectric layers, and the thickness of each dielectric layer of the probe card's circuit board.

[0109] Step S712: Calculate the first volume percentage of the conductor layers and the second volume percentage of the dielectric layers of the circuit board based on the number of conductor layers, the thickness of each conductor layer, the number of dielectric layers, and the thickness of each dielectric layer.

[0110] In some implementations, step S712 includes steps S7121 to S7122.

[0111] Step S7121: Calculate the total thickness of the probe card's circuit board based on the number of conductor layers, the thickness of each conductor layer, the number of dielectric layers, and the thickness of each dielectric layer.

[0112] In some implementations, the formula for calculating the total thickness of the probe card's circuit board is: , in, This indicates the total thickness of the probe card's circuit board. Indicates the number of conductor layers. Indicates the thickness of each conductor layer. Indicates the number of dielectric layers. This indicates the thickness of each dielectric layer.

[0113] In some implementations, the circuit network is relatively complex. In order to improve the calculation accuracy, a preset conductor layer coverage can be obtained, and the total thickness of the probe card's circuit board can be calculated based on the conductor layer coverage, the number of conductor layers, the thickness of each conductor layer, the number of dielectric layers, and the thickness of each dielectric layer.

[0114] , in, This indicates the coverage of the conductor layer.

[0115] In this way, the mechanical simulation experiment method of the probe card can achieve high calculation accuracy for different stacking designs and wiring schemes of the circuit board.

[0116] Step S7122: Calculate the first volume percentage of the conductor layer based on the total thickness of the circuit board, the number of conductor layers, and the thickness of each conductor layer, and calculate the second volume percentage of the dielectric layer based on the first volume percentage of the conductor layer.

[0117] In some implementations, the formula for calculating the first volume percentage is: ,in, This indicates the percentage of the first volume.

[0118] In some implementations, the formula for calculating the second volume percentage is: ,in, This indicates the percentage of the second volume.

[0119] Step S713: Obtain the first elastic modulus of the conductor layer and the second elastic modulus of the dielectric layer.

[0120] The first elastic modulus represents the unit strain produced by the conductor layer under unit stress during the elastic deformation stage at the first temperature. The second elastic modulus represents the unit strain produced by the dielectric layer under unit stress during the elastic deformation stage at the second temperature.

[0121] In some implementations, during actual testing, the probe card and probe station are assembled to form a chamber, and the temperature detected within the chamber is the experimental temperature. In the simulation model, the probe card model and probe station model are assembled to form a simulated chamber. The first temperature refers to the temperature of the conductor layer of the circuit board model in the temperature field data obtained through a heat conduction simulation experiment when the temperature of the simulated chamber is the preset experimental temperature. The second temperature refers to the temperature of the dielectric layer of the circuit board model in the temperature field data obtained through a heat conduction simulation experiment when the temperature of the simulated chamber is the preset experimental temperature.

[0122] In some implementations, the method further includes steps S810 to S820.

[0123] Step S810: Obtain the first temperature, the standard temperature, the first temperature coefficient of the conductor material of the conductor layer, and the first reference elastic modulus of the conductor material at the standard temperature.

[0124] The first temperature is the temperature of the conductor layer of the circuit board model in the temperature field data.

[0125] Optionally, step S810 is located before step S720. In step S810, temperature field data is acquired first, and a first temperature is determined based on the temperature field data. In step S720, the acquired temperature field data can be directly retrieved.

[0126] Step S820: Calculate the first elastic modulus based on the first temperature, standard temperature, first temperature coefficient, and first reference elastic modulus.

[0127] In some implementations, the formula for calculating the first elastic modulus is: , in, Indicates the first elastic modulus. Indicates the first reference elastic modulus. Indicates the first temperature coefficient. Indicates the first temperature. Indicates the standard temperature.

[0128] For example, the first temperature is 100 degrees Celsius (°C), 150°C, or 200°C, etc.

[0129] For example, the standard temperature is 20°C or 25°C, etc.

[0130] In some implementations, the method further includes steps S910 to S920.

[0131] Step S910: Obtain the second temperature, the standard temperature, the second temperature coefficient of the dielectric material of the dielectric layer, and the second reference elastic modulus of the dielectric material at the standard temperature.

[0132] The second temperature is the temperature of the dielectric layer of the circuit board model in the temperature field data.

[0133] Optionally, the second temperature is the same as the first temperature.

[0134] Optionally, the second temperature is different from the first temperature.

[0135] Optionally, step S910 is located before step S720. In step S910, temperature field data is acquired first, and a second temperature is determined based on the temperature field data. In step S720, the acquired temperature field data can be directly retrieved.

[0136] Step S920: Calculate the second elastic modulus based on the second temperature, standard temperature, second temperature coefficient, and second reference elastic modulus.

[0137] In some implementations, the formula for calculating the second elastic modulus is: , in, Indicates the second elastic modulus. This represents the second reference elastic modulus. Indicates the second temperature coefficient. Indicates the second temperature. Indicates the standard temperature.

[0138] The calculation methods for the first and second elastic moduli described above have been simplified compared to existing technologies. This approach further reduces the computational load and improves computational efficiency.

[0139] In some embodiments, the elastic modulus of the dielectric material changes significantly near a temperature at which the elastic modulus changes abruptly. In this case, step S920 includes steps S921 to S923.

[0140] Step S921: Obtain the temperature at which the elastic modulus of the medium material changes abruptly.

[0141] For example, the temperature at which the elastic modulus changes abruptly is 130°C.

[0142] Step S922: When the second temperature is higher than the temperature at which the elastic modulus changes abruptly, obtain the high-temperature correction calculation coefficient for the medium material.

[0143] Step S923: Calculate the second elastic modulus based on the second temperature, standard temperature, second temperature coefficient, high temperature correction calculation coefficient, and second reference elastic modulus.

[0144] In some implementations, the formula for calculating the second elastic modulus is: , in, This represents the high-temperature correction factor for the dielectric material.

[0145] In some implementations, the high-temperature correction factor for the medium material is related to the experimental temperature. The high-temperature correction factor can be calculated based on the experimental temperature and a preset formula for calculating the high-temperature correction factor.

[0146] In some implementations, when the experimental temperature is greater than or equal to the temperature at which the elastic modulus changes abruptly, The value is less than 1.

[0147] By using high-temperature correction coefficients to calculate the second elastic modulus, the calculation accuracy of the second elastic modulus can be improved, thereby improving the accuracy of the mechanical simulation results.

[0148] Step S714: Calculate the first equivalent modulus of the probe card in the first direction based on the first volume ratio, the second volume ratio, the first elastic modulus, and the second elastic modulus using a preset first calculation method.

[0149] The first direction refers to the direction within the first plane where the circuit board of the probe card is located.

[0150] The first plane where the probe card's circuit board is located refers to the plane on the upper surface of the circuit board covered with a conductor layer.

[0151] In some implementations, the first equivalent modulus is obtained by adding the product of the first volume percentage and the first elastic modulus to the product of the second volume percentage and the second elastic modulus. In this case, the formula for calculating the first equivalent modulus is: , in, This represents the first equivalent modulus.

[0152] Step S715: Calculate the second equivalent modulus of the probe card in the second direction based on the first volume ratio, the second volume ratio, the first elastic modulus, and the second elastic modulus using a preset second calculation method.

[0153] The second direction is the direction perpendicular to the first plane.

[0154] In some implementations, the reciprocal of the sum of the quotient of the first volume percentage divided by the first elastic modulus and the quotient of the second volume percentage divided by the second equivalent modulus is determined as the second equivalent modulus. In this case, the formula for calculating the second equivalent modulus is: , in, This represents the second equivalent modulus.

[0155] Step S720: Obtain simulation model, material parameters, and temperature field data.

[0156] In some implementations, the simulation model includes a probe card model and a probe station model, which are assembled together. The probe card model includes multiple component models. For example, the probe card model includes a mechanical reinforcement model and a circuit board model, which are assembled together. Multiple material parameters are included. These material parameters may include the model's coefficient of thermal expansion and other material performance parameters.

[0157] Optionally, the temperature field data is steady-state temperature distribution field data, which is a collection of temperatures of the simulation model at various locations.

[0158] In some implementations, the probe station model includes a simulated heat source, and one set of temperature field data corresponds to an experimental temperature of the simulated heat source.

[0159] In some implementations, temperature field data at multiple different experimental temperatures can be acquired, and other steps in this method can be performed based on each set of temperature field data to conduct multiple mechanical simulation experiments and obtain mechanical simulation results data at different experimental temperatures.

[0160] Optionally, at least one experimental temperature can be selected from each of the multiple experimental temperature ranges to obtain multiple different experimental temperatures. The multiple experimental temperature ranges may include a low temperature range, a normal temperature range, and a high temperature range.

[0161] For example, the experimental temperature is -40°C, 25°C, or 125°C, etc.

[0162] In some implementations, after step S720, the method further includes: performing mesh refinement processing on the specified component model in the probe card model. This improves the accuracy of the mechanical simulation results data and ensures that temperature gradients and stress distributions are captured.

[0163] Optionally, one or more component models can be specified.

[0164] In some implementations, the probe card model further includes a probe model, and multiple designated component models include the probe model and the mechanical reinforcement model. In this case, the mechanical simulation results of the circuit board model and the mechanical reinforcement model are calculated only based on the influence relationship between the probe model and the circuit board model and the mechanical reinforcement model, without needing to calculate the mechanical simulation results for each probe.

[0165] Step S730: Determine boundary conditions based on the simulation model.

[0166] Boundary conditions refer to the physical constraints imposed on the simulation model.

[0167] At this time, step S730 includes steps S731 to S733.

[0168] Step S731: Determine the rigid boundary conditions based on the installation structure region in the probe card model.

[0169] Optionally, the mounting structure area includes the fastener mounting area and / or support structure area in the mechanical reinforcement model.

[0170] Step S732: Determine the boundary conditions between the mechanical reinforcement model and the circuit board model as assembly contact boundary conditions.

[0171] Step S733: Determine the boundary conditions between the probe card model and the probe station model as assembly contact boundary conditions.

[0172] By determining the assembly contact boundary conditions, it is possible to simulate the friction and thermal expansion between models, thereby improving the accuracy of the mechanical simulation results.

[0173] In some implementations, the probe station model is also defined as a rigid body to eliminate the influence of the probe station model on the mechanical simulation of the probe card model.

[0174] In some implementations, each adjacent component model in the probe card model is contact-bonded to simulate the screw tightening effect in an actual test scenario.

[0175] Step S740: Calculate the mechanical simulation results of the simulation model under the constraints of the boundary conditions and temperature field data based on the simulation model, equivalent modulus, material parameters, boundary conditions and temperature field data.

[0176] In some implementations, temperature field data is imported as a load into the mechanical simulation model in finite element analysis software. The mechanical simulation model is then used to conduct simulation experiments on the model based on material parameters, equivalent modulus, and boundary conditions to obtain mechanical simulation results. Specifically, only the mechanical simulation results of the probe card model are calculated; the mechanical simulation results of the probe station model are not required.

[0177] In some implementations, the mechanical simulation results data include deformation distribution data and stress field data for each component model of the probe card model.

[0178] Optionally, a stress contour map can be generated based on the stress field data. The stress contour map is used to visually represent the stress index values ​​and distribution at various points on the probe card model.

[0179] Optionally, a deformation cloud map is generated based on the deformation distribution data. The deformation cloud map is used to visually represent the deformation index values ​​and distribution at various points in the probe card model.

[0180] Optionally, probe flatness can be calculated based on deformation distribution data from the circuit board model.

[0181] Optionally, the stress field data includes equivalent stress (von Mises stress) field data and first principal stress field data. The equivalent stress field is used to represent the combined stress of the model under multiaxial stress conditions. The first principal stress field is used to represent the maximum principal stress of the model.

[0182] In some embodiments, after step S740, the method further includes steps S901 to S904. Steps S901 to S904 are used to perform mechanical simulation result data analysis of the probe card model.

[0183] Step S901: Obtain the mechanical simulation results data of the probe card model.

[0184] The mechanical simulation results were obtained using the probe card mechanical simulation experiment method described above. The mechanical simulation results include numerical values ​​of the mechanical simulation results at various points on the probe card model.

[0185] Optionally, the mechanical simulation results can be multiple, including deformation index values ​​and stress index values.

[0186] In some implementations, the mechanical simulation results data include deformation distribution data and stress field data for each component model of the probe card model.

[0187] Optionally, the mechanical simulation results data also include stress contour plots and deformation contour plots.

[0188] Step S902: Determine the stress concentration area of ​​the probe card model based on the mechanical simulation results data.

[0189] In some implementations, the probe card model includes multiple component models. For example, the probe card model includes a mechanical reinforcement model and a circuit board model, with the mechanical reinforcement model assembled with the circuit board model.

[0190] Optionally, the stress concentration areas of the mechanical reinforcement model and the circuit board model in the probe card model can be determined based on the mechanical simulation results data.

[0191] Optionally, stress concentration areas where the deformation index value is greater than a preset deformation threshold can be determined based on the deformation distribution data in the mechanical simulation results.

[0192] Optionally, stress concentration regions where the stress index value is greater than a preset stress threshold can be determined based on the stress field data in the mechanical simulation results.

[0193] In some implementations, the stress field data includes first principal stress field data and equivalent stress field data.

[0194] In some implementations, the stress concentration region of the probe card model is determined based on the first principal stress field data and equivalent stress field data in the mechanical simulation results.

[0195] Optionally, a first stress concentration region with a first principal stress index value greater than a preset stress threshold is determined based on the first principal stress field data, and a second stress concentration region with an equivalent stress index value greater than a preset stress threshold is determined based on the equivalent stress field data.

[0196] Step S903: Determine whether the probe card model needs optimization based on the mechanical simulation results of the stress concentration region, the target component model in the probe card model where the stress concentration region is located, and the standard values ​​corresponding to the mechanical simulation results of the preset target component model.

[0197] The probe card model includes multiple component models, and the target component model is one of the multiple component models.

[0198] By using the mechanical simulation results of stress concentration areas, the target component model in the probe card model where the stress concentration areas are located, and the standard values ​​corresponding to the mechanical simulation results of the preset target component model, it is determined whether the probe card model needs optimization. When it is determined that the probe card model needs optimization, optimization suggestions are determined based on the type of the target component model. This can greatly reduce the dependence of data analysis methods on manual work, improve optimization efficiency, and also improve optimization results.

[0199] Optionally, the multiple component models include a mechanical reinforcement model, a circuit board model, a substrate model, and a probe model. The assembly order of the multiple component models is as follows: mechanical reinforcement model, circuit board model, substrate model, and probe model.

[0200] Optionally, the mechanical simulation results for the stress concentration region can be at least one numerical value.

[0201] Optionally, at least one mechanical simulation result value includes deformation index values ​​and / or stress index values ​​from the mechanical simulation result data. The mechanical simulation result data includes multiple mechanical simulation result values ​​at various locations within the stress concentration region.

[0202] In some implementations, the standard value corresponds to both the type of the target component model and the type of the mechanical simulation result value. That is, the type of a target component model and the type of a mechanical simulation result value together determine a corresponding standard value.

[0203] In some implementations, the standard value is either a safe operating value or a maximum value. The safe operating value refers to the maximum mechanical simulation result value that allows the actual first component to operate safely and continuously. The maximum value refers to the maximum mechanical simulation result value that the first component can withstand in a short period. The safe operating value is less than the maximum value.

[0204] In some implementations, if at least one stress index value in the stress concentration region is higher than the corresponding standard value, the probe card model is determined to need optimization; otherwise, the probe card model is determined not to need optimization.

[0205] For example, when the mechanical simulation result is a stress index value and the standard value is a safe working stress index value, if there is a stress index value of 600 MPa in the probe card model, while the safe working stress index value is 500 MPa, then even if the stress index value does not exceed the maximum stress index value, the probe card model is still judged to need optimization. In this way, the optimization effect of probe card design can be improved.

[0206] In some implementations, when at least one of the first principal stress values ​​in the stress concentration region is higher than the corresponding standard value, and / or one of the equivalent stress values ​​is higher than the corresponding standard value, the probe card model is determined to need optimization; otherwise, the probe card model is determined not to need optimization.

[0207] In some implementations, if at least one deformation index value in the stress concentration region is higher than the corresponding standard value, it is determined that the probe card model needs to be optimized; otherwise, it is determined that the probe card model does not need to be optimized.

[0208] Optionally, the standard value corresponding to the deformation index value can be the tip flatness, which is used to represent the flatness of the probe tip of the probe card.

[0209] For example, when there is at least one deformation index value of 0.8453 mm in the stress concentration area and the standard value of the needle tip flatness is 0.5 mm, it is determined that the probe card model needs to be optimized.

[0210] In some implementations, if there is at least one stress index value in the stress concentration region that is higher than the corresponding standard value, and there is at least one deformation index value that is higher than the corresponding standard value, it is determined that the probe card model needs to be optimized; otherwise, it is determined that the probe card model does not need to be optimized.

[0211] Step S904: When it is determined that the probe card model needs optimization, optimization suggestions are determined based on the type of the target component model.

[0212] In some implementations, when the probe card model needs optimization based on the stress index value, and the target component model is a mechanical reinforcement model, the optimization recommendations include at least one of adding fillets to the stress concentration area, increasing the number of reinforcing ribs in the mechanical reinforcement model, and increasing the thickness of the mechanical reinforcement model.

[0213] Specifically, in step S903, when at least one stress index value in the stress concentration region is higher than the corresponding standard value, it is determined that the probe card model needs optimization. At this time, in step S840, the optimization suggestions are determined to include at least one of adding fillets to the stress concentration region, increasing the number of reinforcing ribs in the mechanical reinforcement model, and increasing the thickness of the mechanical reinforcement model.

[0214] In some implementations, when the probe card model needs optimization based on the deformation index value, and the target component model is a mechanical reinforcement model, the optimization suggestions include at least one of increasing the thickness of the mechanical reinforcement model, selecting a material with a higher elastic modulus than the current material of the mechanical reinforcement model, and adding a symmetrical support structure to the mechanical reinforcement model.

[0215] Specifically, in step S903, when at least one deformation index value in the stress concentration region is higher than the corresponding standard value, it is determined that the probe card model needs optimization. At this time, in step S840, the optimization suggestions include at least one of the following: increasing the thickness of the mechanical reinforcement model, selecting a material with a higher elastic modulus than the current material of the mechanical reinforcement model, and adding a symmetrical support structure to the mechanical reinforcement model.

[0216] In some implementations, when the probe card model is determined to require optimization based on deformation and stress index values, and the target component model is a mechanical reinforcement model, the optimization suggestions include at least one of the following: selecting a material with a lower coefficient of thermal expansion than the current material of the circuit board model in the probe card model; selecting a material with a higher elastic modulus than the current material of the circuit board model; or changing the assembly preload of the mechanical reinforcement model and the circuit board model in the probe card model. This approach provides comprehensive optimization suggestions and improves the optimization effect.

[0217] Specifically, in step S903, when at least one stress index value in the stress concentration region is higher than the corresponding standard value, and at least one deformation index value is higher than the corresponding standard value, it is determined that the probe card model needs optimization. In this case, in step S904, the optimization suggestions include at least one of the following: selecting a material with a lower coefficient of thermal expansion than the current material of the circuit board model in the probe card model; selecting a material with a higher elastic modulus than the current material of the circuit board model; and changing the assembly preload of the mechanical reinforcement model and the circuit board model in the probe card model.

[0218] In some implementations, step S904 includes: when it is determined that the probe card model needs optimization, determining optimization recommendations based on the type of the target component model and the type of stress concentration region.

[0219] In some implementations, when it is determined that the probe card model needs optimization, and the target component model is a mechanical reinforcement model, and the stress concentration area is the fastener mounting area in the mechanical reinforcement model, the optimization suggestions include adjusting the arrangement of the fastener mounting holes.

[0220] By using the mechanical simulation results of stress concentration areas, the target component model in the probe card model where the stress concentration areas are located, and the standard values ​​corresponding to the mechanical simulation results of the preset target component model, it is determined whether the probe card model needs optimization. When it is determined that the probe card model needs optimization, optimization suggestions are determined based on the type of the target component model. This can greatly reduce the dependence of data analysis methods on manual work, improve optimization efficiency, and also improve optimization results.

[0221] In summary, the simulation model construction method provided in this application has the following advantages: 1. By assembling the probe card model with the final probe station model, so that the probe card model is opposite to the simulated heat source, the probe card model, the simulated heat source and the main body model of the probe station together form a simulated chamber, thus obtaining a simulation model. This simulation model can fit the actual test scenario, thereby making the simulation experiment results using this simulation model more accurate.

[0222] 2. By simplifying the main model of the probe station and the simulated heat source, the amount of computation required for simulation experiments using this simulation model can be greatly reduced.

[0223] 3. By making the upper surface of the simulated heat source parallel to the upper surface of the initial probe station model and the distance between them is relative, the target position of the simulated heat source can be determined. This allows the simulated heat source to be aligned with the probe card model to be placed on the upper surface of the probe station model, thereby simplifying the simulation model and reducing the computational load of the simulation experiment.

[0224] 4. By determining the target position of the simulated heat source based on the distance vector, the specified plane on the simulated heat source, and the preset standard point, the upper surface of the simulated heat source does not have to be parallel to the upper surface of the initial probe station model. Thus, the simulated heat source does not have to be directly facing the probe card model, and the target position of the simulated heat source can be flexibly adjusted according to user needs.

[0225] 5. By making the upper surface of the simulated heat source parallel to the upper surface of the initial probe station model and the distance between them relative to each other, the target position of the simulated heat source can be determined. This allows the simulated heat source to be directly aligned with the probe card model to be placed on the upper surface of the probe station model, thereby simplifying the simulation model and reducing the amount of computation in the simulation experiment.

[0226] Please see Figure 6A and Figure 6B , Figure 6A This is a temperature field distribution diagram of the side of the mechanical reinforcement model away from the wafer model in a heat conduction simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application. Figure 6B This is a temperature field distribution diagram of the side of the mechanical reinforcement model near the wafer model in a heat conduction simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application. (See diagram for example.) Figure 6A and Figure 6B As shown, the temperature index value at the center of the mechanical reinforcement model 21 is higher than that at the edge.

[0227] Please see Figure 6C and Figure 6D , Figure 6C This is a temperature field distribution diagram of the side of the circuit board model away from the wafer model in a thermal conduction simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application. Figure 6DThis is a temperature field distribution diagram of the side of the circuit board model closest to the wafer model in a heat conduction simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application. (See diagram for example.) Figure 6C and Figure 6D As shown, the temperature index value at the center of circuit board model 22 is higher than the temperature index value at the edge. The temperature index value of the edge of the circuit board model closer to the wafer model is higher than the temperature index value of the edge of the circuit board model farther from the wafer model.

[0228] Please see Figure 7A and Figure 7B , Figure 7A This is a stress distribution diagram of the side of the circuit board model away from the wafer model in a mechanical simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application. Figure 7B This is a stress distribution diagram of the side of the circuit board model closest to the wafer model in a mechanical simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application. Figure 7A and Figure 7B As shown, the stress index value of a portion of the edge region of circuit board model 22 is higher than that of the center region.

[0229] Please see Figures 7C to 7E , Figure 7C This is a diagram showing the deformation distribution of the side of the mechanical reinforcement model away from the wafer model in a mechanical simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application. Figure 7D This is a diagram showing the deformation distribution of the side of the mechanical reinforcement model closest to the wafer model in a mechanical simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application. Figure 7E This is a cross-sectional view of the mechanical reinforcement model in the mechanical simulation experiment of the probe card, implemented using the simulation model provided in the embodiments of this application. For example... Figures 7C to 7E As shown, the deformation at the center of the mechanical reinforcement model 21 is greater than the deformation at the edge.

[0230] Please see Figures 7F to 7H , Figure 7F This is a diagram showing the deformation distribution of the side of the circuit board model away from the wafer model in a mechanical simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application. Figure 7G This is a diagram showing the deformation distribution of the side of the circuit board model closest to the wafer model in a mechanical simulation experiment of a probe card implemented using the simulation model provided in the embodiments of this application. Figure 7H This is a cross-sectional view of the circuit board model used in the mechanical simulation experiment of the probe card implemented using the simulation model provided in the embodiments of this application. For example... Figures 7F to 7H As shown, the deformation at the center of circuit board model 22 is greater than the deformation at the edges.

[0231] Please see Figure 8, Figure 8 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. For example... Figure 8 As shown, the electronic device 400 includes: one or more processors 410 and a memory 420. Figure 8 Take a processor 410 as an example.

[0232] In some implementations, the processor 410 and the memory 420 may be connected via a bus or other means. Figure 8 Taking the example of a connection between China and Israel via a bus.

[0233] In some embodiments, the processor 410 is configured to acquire determination information of the probe card model and generate a probe card model based on the determination information; acquire the relative distance between the simulated heat source and the probe card model; determine the target position of the simulated heat source in a preset initial probe station model based on the relative distance, wherein the initial probe station model includes a simulated heat source and a probe station main body model, the simulated heat source is assembled with the probe station main body model, and the upper surface of the simulated heat source is lower than the upper surface of the probe station main body model; in the initial probe station model, the position of the simulated heat source is adjusted to the target position to obtain the final probe station model; the probe card model is assembled with the final probe station model so that the probe card model is opposite to the simulated heat source, and the probe card model, the simulated heat source and the probe station main body model together form a simulation chamber, thereby obtaining a simulation model.

[0234] In some embodiments, memory 420 serves as a non-volatile computer-readable storage medium, used to store non-volatile software programs, non-volatile computer-executable programs, and modules, such as the program instructions / modules for the simulation model construction method in the embodiments of this application. Processor 410 executes various functional applications and data processing of electronic device 400 by running the non-volatile software programs, instructions, and modules stored in memory 420, thereby implementing the simulation model construction method of the above-described method embodiments.

[0235] In some embodiments, memory 420 may include a program storage area and a data storage area, wherein the program storage area may store the operating system and applications required for at least one function; the data storage area may store data created based on the use of electronic device 400, etc. Furthermore, memory 420 may include high-speed random access memory and may also include non-volatile memory, such as at least one disk storage device, flash memory device, or other non-volatile solid-state storage device. In some embodiments, memory 420 may optionally include memory remotely located relative to processor 410, and this remote memory may be connected to the controller via a network. Examples of such networks include, but are not limited to, the Internet, corporate intranets, local area networks, mobile communication networks, and combinations thereof.

[0236] In some implementations, one or more modules are stored in memory 420 and, when executed by one or more processors 410, perform the simulation model construction method in any of the above method embodiments, for example, performing the above-described... Figure 1 The method steps S100 to S500.

[0237] Please refer to Figure 9 , Figure 9 This is a structural block diagram of a computer-readable storage medium provided in an embodiment of this application. The computer-readable storage medium 500 stores program code 510, which can be called by a processor to execute the simulation model construction method described in the above method embodiments.

[0238] The computer-readable storage medium 500 may be an electronic storage device such as flash memory, electrically erasable programmable read-only memory (EEPROM), hard disk, or read-only memory (ROM). Optionally, the computer-readable storage medium includes a non-volatile computer-readable medium. The computer-readable storage medium 500 has storage space for program code that performs any of the method steps of the construction method of the above-described simulation model. This program code can be read from or written to one or more computer program products. The program code may, for example, be compressed in a suitable form.

[0239] This application also provides a computer program product, including a computer program that, when executed by a processor, implements the above-described method for constructing a simulation model.

[0240] In summary, this application provides a method for constructing a simulation model, an electronic device, and a storage medium. The method for constructing the simulation model includes: acquiring determination information of a probe card model and generating a probe card model based on the determination information; acquiring the relative distance between a simulated heat source and the probe card model; determining the target position of the simulated heat source in a preset initial probe station model based on the relative distance, wherein the initial probe station model includes a simulated heat source and a probe station main body model, the simulated heat source is assembled with the probe station main body model, and the upper surface of the simulated heat source is lower than the upper surface of the probe station main body model; adjusting the position of the simulated heat source to the target position in the initial probe station model to obtain the final probe station model; assembling the probe card model with the final probe station model so that the probe card model is opposite to the simulated heat source, and the probe card model, the simulated heat source, and the probe station main body model together form a simulation chamber, thereby obtaining the simulation model. This application assembles a probe card model with a final probe station model so that the probe card model is positioned opposite the simulated heat source. The probe card model, the simulated heat source, and the main body model of the probe station together form a simulated chamber, thereby obtaining a simulation model. This simulation model can closely match the actual test scenario, thus making the simulation results of the simulation experiment using this simulation model more accurate.

[0241] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A method for constructing a simulation model, characterized in that, include: Obtain the determination information of the probe card model, and generate the probe card model based on the determination information of the probe card model; Obtain the relative distance between the simulated heat source and the probe card model; The target position of the simulated heat source is determined in a preset initial probe station model based on the relative distance. The initial probe station model includes the simulated heat source and a probe station main body model. The simulated heat source is assembled with the probe station main body model, and the upper surface of the simulated heat source is lower than the upper surface of the probe station main body model. In the initial probe station model, the position of the simulated heat source is adjusted to the target position to obtain the final probe station model; The probe card model is assembled with the final probe station model so that the probe card model is opposite the simulated heat source. The probe card model, the simulated heat source, and the probe station main body model together form a simulation chamber, thereby obtaining a simulation model.

2. The method for constructing a simulation model according to claim 1, characterized in that, The probe card model includes multiple component models. The step of acquiring determination information of the probe card model and generating the probe card model based on the determination information includes: Obtain the identifier of each component model of the probe card model; Each component model is retrieved from a pre-defined component library based on its identifier. Obtain the component model assembly relationship, and assemble all the component models based on the component model assembly relationship to obtain the probe card model.

3. The method for constructing a simulation model according to claim 1, characterized in that, The determination information of the probe card model is the model file of the probe card model. The step of obtaining the determination information of the probe card model and generating the probe card model based on the determination information includes: Obtain the determination information of the probe card model, and parse the determination information of the probe card model to obtain the probe card model.

4. The method for constructing a simulation model according to claim 1, characterized in that, The process of determining the target location of the simulated heat source in a preset initial probe station model based on the relative distance includes... The target location of the simulated heat source is determined by making the upper surface of the simulated heat source parallel to the upper surface of the initial probe station model and the distance between them being the relative distance.

5. The method for constructing a simulation model according to claim 1, characterized in that, The process involves assembling the probe card model with the final probe station model, so that the probe card model is positioned opposite the simulated heat source. The probe card model, the simulated heat source, and the probe station main body model together form a simulation chamber, thereby obtaining a simulation model, including: The probe card model is placed on the upper surface of the final probe station model so that the probe card model is opposite to the simulated heat source. The probe card model, the simulated heat source and the probe station main body model together form a simulated chamber, thereby obtaining a simulation model.

6. The method for constructing a simulation model according to claim 1, characterized in that, The probe card model includes a mechanical reinforcement model and a circuit board model. The mechanical reinforcement model is assembled with the circuit board model. The distance between the circuit board model and the simulated heat source is less than the distance between the mechanical reinforcement model and the simulated heat source.

7. The method for constructing a simulation model according to claim 6, characterized in that, The probe card model also includes a substrate model and a probe model. The assembly order of the multiple component models of the probe card model is as follows: mechanical reinforcement model, circuit board model, substrate model, and probe model.

8. The method for constructing a simulation model according to claim 7, characterized in that, The final probe station model also includes a wafer model, which is located above the simulated heat source and below the probe card model, with the probe model in direct contact with the wafer model.

9. An electronic device, characterized in that, The electronic device includes: At least one processor; and a memory communicatively connected to said at least one processor; wherein, The memory stores instructions that can be executed by the at least one processor to enable the at least one processor to perform the method for constructing the simulation model as described in any one of claims 1 to 8.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores an executable program, which is executed by a processor to implement the method for constructing a simulation model as described in any one of claims 1 to 8.

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