Power sharing method and device
CN121506212BActive Publication Date: 2026-05-26SHENZHEN ITZR TECH
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHENZHEN ITZR TECH
- Filing Date
- 2026-01-13
- Publication Date
- 2026-05-26
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Figure CN121506212B_ABST
Abstract
This invention relates to the field of power sharing technology, and discloses a power sharing method and apparatus. The method involves connecting a DDR3 detection signal line to the ground contact of the DDR3 slot on the motherboard. A pull-up resistor pulls the DDR3 detection signal line to a high level, controlling the first transistor to conduct and the second transistor to cut off. With the second transistor off, the power supply chip outputs a DDR4 operating voltage. When a DDR3 memory module is inserted into the DDR3 slot, the ground pin of the DDR3 memory module pulls the DDR3 detection signal line to a low level, controlling the first transistor to cut off and driving the second transistor to conduct. With the second transistor on, a voltage divider network is switched to allow the power supply chip to output a DDR3 operating voltage to supply the DDR3 memory module. This invention employs a safety strategy of defaulting to a low voltage and only boosting the voltage when DDR3 is detected, effectively avoiding the risk of high-voltage damage due to misoperation or incorrect insertion, and protecting expensive memory hardware.
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