A lithium niobate thin film MEMS traveling wave motor design structure and a preparation method thereof

Abstract

The application provides a lithium niobate thin film MEMS traveling wave motor design structure and a preparation method, relates to the technical field of traveling wave motors, and comprises an upper electrode, a lower electrode, a piezoelectric driving layer and a traveling wave micro-actuator belt displacement amplification tooth structure; the upper electrode is arranged on the upper surface of the piezoelectric driving layer, the lower electrode is arranged on the lower surface of the piezoelectric driving layer, and the traveling wave micro-actuator belt displacement amplification tooth structure is arranged on the lower surface of the lower electrode; the material of the piezoelectric driving layer is lithium niobate; the piezoelectric driving layer is divided into a plurality of driving electrode partitions; driving is realized by applying a multi-phase sinusoidal excitation signal to the piezoelectric driving layer, and each driving electrode partition is respectively applied with a sinusoidal excitation signal; the lithium niobate thin film MEMS traveling wave motor is prepared based on an LN-SOI wafer or based on an LN-SI wafer. The application has the advantages of improving the reliability and output performance of the micro motor.

Description

TECHNICAL FIELD

[0001] The application relates to the technical field of traveling wave motors, in particular to a lithium niobate thin film MEMS traveling wave motor design structure and a preparation method. BACKGROUND

[0002] The MEMS piezoelectric plane traveling wave resonator is a kind of piezoelectric resonator, which is based on a sheet-shaped piezoelectric material with small thickness and is processed through a MEMS process.

[0003] In operation, a fixed phase difference of 90° alternating signal is input to the driving electrode area at different positions on the surface, two columns of plane standing waves with a phase difference of 90° are excited, and a column of plane traveling waves can be formed by superposition. The traveling waves drive the particles on the surface to make elliptical motion, and drive the surface load through friction, thereby outputting torque to the outside, thereby realizing the driving function of the micro motor. Such devices are also called MEMS piezoelectric plane drivers. The traveling waves excited by the piezoelectric plane traveling wave resonator form a periodic distribution of protrusions on the surface, and the protrusions propagate forward along a fixed direction like waves, and drive the load to move in a certain direction through friction. The height of the protrusion is the amplitude of the traveling wave, and the periodic distribution of the protrusion is the mode of the traveling wave. When the piezoelectric plane traveling wave resonator encounters environmental changes or load changes, the mechanical stiffness of the physical structure may change, thereby changing the resonant frequency of the physical structure. If the resonant frequency of the plane traveling wave resonator changes while the frequency of the input driving signal remains unchanged, the amplitude of the excited traveling wave may decrease or the traveling wave mode may be incomplete, thereby reducing the output force, reliability and stability of the driver. At present, the polarization intensity of the piezoelectric film of the mainstream MEMS traveling wave micro motor decays for a long time, and since the sputtering method is used for growth, it can only be limited to a thickness of <5 microns, and the driving voltage and output performance are difficult to improve.

[0004] Therefore, it is urgent to optimize the structure and preparation method of the MEMS traveling wave motor to realize higher piezoelectric response, better resonant stability and stronger output performance, and improve the reliability and output performance of the micro motor. SUMMARY

[0005] The application aims to provide a lithium niobate thin film MEMS traveling wave motor design structure and a preparation method, which can improve the reliability and output performance of the micro motor.

[0006] The application is achieved by the following technical solutions:

[0007] A lithium niobate thin film MEMS traveling wave motor design structure, comprising an upper electrode, a lower electrode, a piezoelectric driving layer and a traveling wave micro actuator with displacement amplification tooth structure.

[0008] The upper electrode is positioned above the piezoelectric driving layer, the lower electrode is positioned below the piezoelectric driving layer, and the traveling wave micro actuator with displacement amplification tooth structure is positioned below the lower electrode.

[0009] The piezoelectric driving layer is made of lithium niobate. The piezoelectric driving layer is divided into multiple driving electrode partitions. Driving is achieved by applying a multiphase sinusoidal excitation signal to the piezoelectric driving layer, and each driving electrode partition is applied with a sinusoidal excitation signal.

[0010] The lithium niobate thin-film MEMS traveling wave motor is fabricated based on LN-SOI wafers or LN-SI wafers.

[0011] Preferably, when the lithium niobate thin-film MEMS traveling wave motor is fabricated based on an LN-SOI wafer, the traveling wave micro-actuator with displacement amplification tooth structure includes top silicon, bottom silicon, and silicon oxide;

[0012] The top silicon is disposed below the bottom electrode, and the silicon oxide is disposed below the top silicon;

[0013] The substrate silicon is disposed below the silicon oxide, and the substrate silicon has a toothed structure distributed circumferentially along the silicon oxide.

[0014] Preferably, when the lithium niobate thin-film MEMS traveling wave motor is fabricated based on an LN-SI wafer, the traveling wave micro-actuator with displacement amplification tooth structure includes toothed silicon.

[0015] The toothed silicon is a toothed structure distributed circumferentially along the lower electrode.

[0016] Preferably, the mode of the traveling wave micro-actuator with displacement amplification tooth structure is B03 mode, B04 mode, B05 mode, or B06 mode.

[0017] Preferably, the method for applying the multiphase sinusoidal excitation signal is as follows:

[0018] The piezoelectric driving layer is annular, and the piezoelectric driving layer is divided into... Each sector, It is an integer. The number of phases of the multiphase sinusoidal excitation signal;

[0019] The multiphase sinusoidal excitation signals are numbered sequentially from 1 according to phase order, and the sectors are numbered sequentially from 1 along the sector arrangement.

[0020] For the first The first phase sinusoidal excitation signal is applied to the sector, which is the first... The sector is given a second-phase sinusoidal excitation signal, which is the first... The sector is given a third-phase sinusoidal excitation signal, which is the first... the fourth sector applies a fourth phase sinusoidal excitation signal, .

[0021] Preferably, the multi-phase sinusoidal excitation signal is a four-phase sinusoidal excitation signal, the amplitudes and frequencies of the four-phase sinusoidal excitation signals are the same, and the phases of the first phase sinusoidal excitation signal to the fourth phase sinusoidal excitation signal are sequentially different by 90 degrees.

[0022] Preferably, the piezoelectric driving layer is divided into 12 sectors.

[0023] The application also provides a preparation method of a lithium niobate thin film MEMS traveling wave motor, which is used for preparing the design structure of the lithium niobate thin film MEMS traveling wave motor and comprises the following steps:

[0024] A wafer is prepared, the wafer is an LN-SOI wafer or an LN-SI wafer, and the wafer comprises, from top to bottom, a first electrode layer, a lithium niobate layer, a second electrode layer and a structure layer;

[0025] After performing a photolithography etching on the top of the wafer, the upper electrode patterning is realized, and the upper electrode is obtained;

[0026] A deep silicon etching process is performed on the bottom of the wafer to generate the traveling wave micro-actuator belt displacement amplification tooth structure and expose the lower electrode;

[0027] The laser etching method is used to etch the lithium niobate layer to form a bare core structure release.

[0028] Preferably, when the lithium niobate thin film MEMS traveling wave motor is prepared based on an LN-SOI wafer, the preparation method comprises the following steps:

[0029] An LN-SOI wafer is prepared, the LN-SOI wafer comprises, from top to bottom, a first electrode layer, a lithium niobate layer, a second electrode layer and a structure layer, and the structure layer comprises, from top to bottom, a top silicon layer, a silicon oxide layer and a bottom silicon layer;

[0030] The first electrode layer is subjected to a photolithography etching to realize the upper electrode patterning;

[0031] A deep silicon etching process is performed on the bottom silicon layer and the silicon oxide layer to form a tooth structure distributed along the periphery of the top silicon layer;

[0032] A deep silicon etching process is performed on the outer circle of the top silicon layer to expose the outer circle part of the second electrode layer;

[0033] The laser etching method is used to etch the lithium niobate layer to form a bare core structure release, the top silicon layer, the bottom silicon layer and the silicon oxide layer form the traveling wave micro-actuator belt displacement amplification tooth structure, the first electrode layer and the second electrode layer form the upper electrode and the lower electrode respectively, and the lithium niobate layer forms the piezoelectric driving layer.

[0034] Preferably, the lithium niobate thin film MEMS traveling wave motor is prepared based on the LN-SI wafer, and the preparation method comprises the following steps:

[0035] An LN-SI wafer is prepared, and the LN-SI wafer is sequentially provided with a first electrode layer, a lithium niobate layer, a second electrode layer and a structure layer from top to bottom, and the structure layer is a silicon layer;

[0036] After the first electrode layer is subjected to patterned photoetching, etching is performed, and the upper electrode is patterned;

[0037] A deep silicon etching process is performed on the silicon layer, a tooth-shaped structure is formed along the circumference of the bottom of the second electrode layer, and the part outside the tooth-shaped structure is exposed to the second electrode layer;

[0038] The lithium niobate layer is etched by a laser etching method to form a bare core structure release, the silicon layer forms a displacement amplification tooth structure of the traveling wave micro-actuator, the first electrode layer and the second electrode layer form the upper electrode and the lower electrode respectively, and the lithium niobate layer forms the piezoelectric driving layer.

[0039] The technical scheme of the present application has at least the following advantages and beneficial effects:

[0040] The present application adopts single crystal LN lithium niobate and SOI or SI wafer bonding to form a piezoelectric thin film wafer, and the MEMS traveling wave motor designed with LN as the core piezoelectric driving layer has the performance advantages of stable piezoelectric performance and large voltage and large torque compared with the PZT thin film traveling wave motor;

[0041] The present application does not have the problem of polarization direction decay over time, avoids the driving performance decline caused by polarization degradation, and can maintain stable piezoelectric response in long-term operation, thereby improving the reliability and service life of the traveling wave motor;

[0042] The present application proposes a wafer-level etching process based on laser scribing, which can realize high-precision and low-damage processing of the lithium niobate thin film structure, and improves the process controllability and device consistency;

[0043] The MEMS traveling wave motor based on LN-SOI / SI designed in the present application is reasonable in design and simple in structure, can maintain stable resonant frequency and output characteristics under different environmental and load conditions, has complete traveling wave mode and high amplitude, thereby realizing long-term stable driving performance output, and significantly improving the reliability and applicability of the device. BRIEF DESCRIPTION OF DRAWINGS

[0044] Figure 1 The structure schematic diagram of the lithium niobate thin film MEMS traveling wave motor prepared based on the LN-SOI wafer for the embodiment 1 of the present application is shown in the figure;

[0045] Figure 2A structure schematic diagram of a lithium niobate thin film MEMS traveling wave motor prepared based on an LN-SI wafer is provided for the embodiment 1 of the present application.

[0046] Figure 3 A schematic diagram of an application case of a multiphase sinusoidal excitation signal is provided for the embodiment 1 of the present application.

[0047] Figure 4 A preparation flow schematic diagram of a lithium niobate thin film MEMS traveling wave motor prepared based on an LN-SOI wafer is provided for the embodiment 2 of the present application.

[0048] Figure 5 A preparation flow schematic diagram of a lithium niobate thin film MEMS traveling wave motor prepared based on an LN-SI wafer is provided for the embodiment 2 of the present application. DETAILED DESCRIPTION

[0049] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described below in connection with the drawings in the embodiments of the present application. Obviously, the described embodiments are some but not all of the embodiments of the present application. The components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0050] Embodiment 1

[0051] The embodiment provides a lithium niobate thin film MEMS traveling wave motor design structure, referring to Figures 1-2 , comprising an upper electrode, a lower electrode, a piezoelectric driving layer and a traveling wave micro-actuator belt displacement amplification tooth structure.

[0052] The upper electrode is arranged above the piezoelectric driving layer, the lower electrode is arranged below the piezoelectric driving layer, and the traveling wave micro-actuator belt displacement amplification tooth structure is arranged below the lower electrode.

[0053] The material of the piezoelectric driving layer is lithium niobate, the piezoelectric driving layer is divided into a plurality of driving electrode partitions, driving is realized by applying a multiphase sinusoidal excitation signal to the piezoelectric driving layer, and each driving electrode partition is respectively applied with a sinusoidal excitation signal.

[0054] The lithium niobate thin film MEMS traveling wave motor is prepared based on an LN-SOI wafer or based on an LN-SI wafer.

[0055] This embodiment uses lithium niobate (LN) as the piezoelectric drive layer material, which has higher piezoelectric performance stability and lower dielectric loss, maintaining excellent drive response and energy conversion efficiency under high-frequency conditions, thereby improving the output performance of the traveling wave motor. Furthermore, the upper and lower electrodes above and below the piezoelectric drive layer can form a vertical electric field distribution, fully stimulating the piezoelectric effect of the lithium niobate crystal, achieving stable and high-amplitude vibration output, and thus enhancing the driving force of the micro-actuator. The traveling wave micro-actuator with displacement amplification tooth structure allows the vibration energy of the traveling wave motor to be better output, improving the micro-drive efficiency of the system.

[0056] On the one hand, such as Figure 1 As shown, when the lithium niobate thin-film MEMS traveling wave motor is fabricated based on LN-SOI wafer, the traveling wave micro-actuator with displacement amplification tooth structure includes top silicon, bottom silicon and silicon oxide;

[0057] The top silicon is disposed below the bottom electrode, and the silicon oxide is disposed below the top silicon;

[0058] The substrate silicon is disposed below the silicon oxide, and the substrate silicon has a toothed structure distributed circumferentially along the silicon oxide.

[0059] On the other hand, such as Figure 2 As shown, when the lithium niobate thin-film MEMS traveling wave motor is fabricated based on LN-SI wafer, the traveling wave micro-actuator with displacement amplification tooth structure includes toothed silicon.

[0060] The toothed silicon is a toothed structure distributed circumferentially along the lower electrode.

[0061] Preferably, the mode of the traveling wave micro-actuator with displacement amplification tooth structure is B03 mode, B04 mode, B05 mode, or B06 mode.

[0062] Based on the above technical solution, the method for applying the multiphase sinusoidal excitation signal is as follows:

[0063] The piezoelectric driving layer is annular, and the piezoelectric driving layer is divided into... Each sector, It is an integer. The number of phases of the multiphase sinusoidal excitation signal;

[0064] The multiphase sinusoidal excitation signals are numbered sequentially from 1 according to phase order, and the sectors are numbered sequentially from 1 along the sector arrangement.

[0065] For the first The first phase sinusoidal excitation signal is applied to the sector, which is the first... The sector is given a second-phase sinusoidal excitation signal, which is the first... The third phase sinusoidal excitation signal is applied to the first sector The fourth phase sinusoidal excitation signal is applied to the second sector .

[0066] Specifically, the multi-phase sinusoidal excitation signal is a four-phase sinusoidal excitation signal, the amplitudes and frequencies of the four-phase sinusoidal excitation signals are the same, and the phases of the first phase sinusoidal excitation signal to the fourth phase sinusoidal excitation signal are sequentially different by 90 degrees. As a preferred solution, the piezoelectric driving layer is divided into 12 sectors.

[0067] That is, as per the four-phase sinusoidal excitation signal and the 12 sectors, the distribution of the sinusoidal excitation signal can be referred to Figure 3 , the phase angle of the first phase sinusoidal excitation signal is 0° (corresponding to sin 0° in the figure), the phase angle of the second phase sinusoidal excitation signal is 90° (corresponding to cos 90° in the figure), the phase angle of the third phase sinusoidal excitation signal is 180° (corresponding to -sin 180° in the figure), and the phase angle of the fourth phase sinusoidal excitation signal is 270° (corresponding to -cos 270° in the figure). According to the above distribution, the first sector, the fifth sector, and the ninth sector apply the first phase sinusoidal excitation signal, the second sector, the sixth sector, and the tenth sector apply the second phase sinusoidal excitation signal, the third sector, the seventh sector, and the eleventh sector apply the third phase sinusoidal excitation signal, and the fourth sector, the eighth sector, and the twelfth sector apply the fourth phase sinusoidal excitation signal.

[0068] The principle of the above sinusoidal excitation signal application is to excite a fixed phase difference (θ) in space by two columns of standing waves with the same frequency and amplitude ) excitation, so that the surface particles produce elliptical motion by the superposition of the out-of-plane vertical vibrations of the two columns of standing waves, thereby forming in-plane displacement and sliding friction with the rotor to form a driving effect:

[0069] ;

[0070] In the formula, represents the displacement response of the stator, is the response amplitude of the standing wave excitation, is the displacement distribution function along the radial direction perpendicular to the middle surface, is the displacement distribution function along the circumferential direction, is the response frequency of the standing wave.

[0071] Example 2

[0072] The embodiment provides a preparation method of a lithium niobate thin film MEMS traveling wave motor, which is used for preparing the design structure of the lithium niobate thin film MEMS traveling wave motor.

[0073] Prepare a wafer, the wafer is an LN-SOI wafer or an LN-SI wafer, and the wafer has, from top to bottom, a first electrode layer, a lithium niobate layer, a second electrode layer, and a structure layer;

[0074] After performing patterned photoetching on the top of the wafer, etching is performed to achieve patterned upper electrodes, thereby obtaining the upper electrodes;

[0075] Deep silicon etching is performed on the bottom of the wafer to generate the row wave micro-actuator belt displacement amplification tooth structure and expose the lower electrodes;

[0076] Laser etching is used to etch the lithium niobate layer to form a bare core structure release.

[0077] A single-crystal LN lithium niobate is bonded with an SOI or SI wafer to form a piezoelectric thin film wafer. The LN-based MEMS row wave motor is designed as a core piezoelectric driving layer. In view of the problem that the LN thick film is difficult to be etched by a MEMS process, a laser wafer-level etching process is proposed. Generally, a precision mechanical machining method can be used for patterned processing of the LN thick film wafer. However, the mechanical machining method has low precision and high manufacturing cost. The method of the embodiment has high precision and saves cost, and has high cost performance.

[0078] On the one hand, the lithium niobate thin film MEMS row wave motor is prepared based on an LN-SOI wafer, and Figure 4 The preparation method comprises the following steps:

[0079] An LN-SOI wafer is prepared, and the LN-SOI wafer has, from top to bottom, a first electrode layer, a lithium niobate layer, a second electrode layer, and a structure layer. The structure layer comprises, from top to bottom, a top silicon layer, a silicon oxide layer, and a bottom silicon layer.

[0080] After performing patterned photoetching on the first electrode layer, etching is performed to achieve patterned upper electrodes.

[0081] Deep silicon etching is performed on the bottom silicon layer and the silicon oxide layer to form a tooth-shaped structure distributed along the bottom of the top silicon layer.

[0082] Deep silicon etching is performed on the outer circle of the top silicon layer to expose the outer circle part of the second electrode layer.

[0083] Laser scribing is performed, that is, laser etching is used to etch the lithium niobate layer to form a bare core structure release. The top silicon layer, the bottom silicon layer, and the silicon oxide layer form the row wave micro-actuator belt displacement amplification tooth structure. The first electrode layer and the second electrode layer form the upper electrodes and the lower electrodes, respectively. The lithium niobate layer forms the piezoelectric driving layer.

[0084] On the other hand, the lithium niobate thin film MEMS row wave motor is prepared based on an LN-SI wafer, andFigure 5 The preparation method comprises the following steps:

[0085] Prepare an LN-SI wafer, which comprises a first electrode layer, a lithium niobate layer, a second electrode layer and a structure layer from top to bottom, and the structure layer is a silicon layer;

[0086] After the first electrode layer is subjected to patterned photoetching and etching, the upper electrode is patterned;

[0087] A deep silicon etching process is performed on the silicon layer to form a tooth-shaped structure distributed along the periphery of the bottom of the second electrode layer, and the part outside the tooth-shaped structure is exposed to the second electrode layer;

[0088] Laser scribing is performed, the lithium niobate layer is etched by a laser etching method to form a bare core structure release, the silicon layer forms a traveling wave micro-actuator belt displacement amplification tooth structure, the first electrode layer and the second electrode layer form the upper electrode and the lower electrode respectively, and the lithium niobate layer forms the piezoelectric driving layer.

[0089] The above only describes the preferred embodiments of the present application and is not used to limit the present application. For those skilled in the art, the present application can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A lithium niobate thin film MEMS traveling wave motor design structure, characterized by, The displacement amplification tooth structure of the row wave micro-actuator belt is arranged below the lower electrode. The upper electrode is arranged above the piezoelectric driving layer, the lower electrode is arranged below the piezoelectric driving layer, and the displacement amplification tooth structure of the row wave micro-actuator belt is arranged below the lower electrode. The material of the piezoelectric driving layer is lithium niobate, the piezoelectric driving layer is divided into a plurality of driving electrode partitions, driving is realized by applying a multi-phase sinusoidal excitation signal to the piezoelectric driving layer, and each driving electrode partition is respectively applied with a sinusoidal excitation signal. The lithium niobate thin film MEMS row wave motor is prepared based on an LN-SOI wafer or based on an LN-SI wafer. When the lithium niobate thin film MEMS row wave motor is prepared based on the LN-SOI wafer, the preparation method comprises the following steps: An LN-SOI wafer is prepared, the LN-SOI wafer comprises a first electrode layer, a lithium niobate layer, a second electrode layer and a structure layer from top to bottom, and the structure layer comprises a top silicon layer, a silicon oxide layer and a bottom silicon layer distributed from top to bottom; After the first electrode layer is subjected to patterned photoetching, etching is performed, and upper electrode patterning is realized; A deep silicon etching process is performed on the bottom silicon layer and the silicon oxide layer, and a tooth structure distributed along the circumference of the bottom of the top silicon layer is formed; A deep silicon etching process is performed on the outer circle of the top silicon layer, and the outer circle part of the second electrode layer is exposed; A laser etching method is used to etch the lithium niobate layer to form a bare core structure release, the top silicon layer, the bottom silicon layer and the silicon oxide layer form the displacement amplification tooth structure of the row wave micro-actuator belt, the first electrode layer and the second electrode layer form the upper electrode and the lower electrode respectively, and the lithium niobate layer forms the piezoelectric driving layer. When the lithium niobate thin film MEMS row wave motor is prepared based on the LN-SI wafer, the preparation method comprises the following steps: An LN-SI wafer is prepared, the LN-SI wafer comprises a first electrode layer, a lithium niobate layer, a second electrode layer and a structure layer from top to bottom, and the structure layer is a silicon layer; After the first electrode layer is subjected to patterned photoetching, etching is performed, and upper electrode patterning is realized; A deep silicon etching process is performed on the silicon layer, a tooth structure distributed along the circumference of the bottom of the second electrode layer is formed, and the part outside the tooth structure exposes the second electrode layer; A laser etching method is used to etch the lithium niobate layer to form a bare core structure release, the silicon layer forms the displacement amplification tooth structure of the row wave micro-actuator belt, the first electrode layer and the second electrode layer form the upper electrode and the lower electrode respectively, and the lithium niobate layer forms the piezoelectric driving layer.

2. The design structure of a lithium niobate thin film MEMS traveling wave motor according to claim 1, wherein, When the lithium niobate thin film MEMS row wave motor is prepared based on the LN-SOI wafer, the displacement amplification tooth structure of the row wave micro-actuator belt comprises top silicon, bottom silicon and silicon oxide; The top silicon is arranged below the lower electrode, and the silicon oxide is arranged below the top silicon. The bottom silicon is arranged below the silicon oxide, and the bottom silicon is a tooth structure distributed along the circumference of the silicon oxide.

3. The design structure of a lithium niobate thin film MEMS traveling wave motor of claim 1, wherein, When the lithium niobate thin film MEMS row wave motor is prepared based on the LN-SI wafer, the displacement amplification tooth structure of the row wave micro-actuator belt comprises tooth-shaped silicon. The tooth-shaped silicon is a tooth structure distributed along the circumference of the lower electrode.

4. The design structure of a lithium niobate thin film MEMS traveling wave motor of claim 1, wherein, The modal of the traveling wave micro-actuator with displacement amplification tooth structure is B03 modal or B04 modal or B05 modal or B06 modal.

5. The design structure of a lithium niobate thin film MEMS traveling wave motor of claim 1, wherein, The method for applying the multiphase sinusoidal excitation signal is: The piezoelectric driving layer is circular ring-shaped, and the piezoelectric driving layer is divided into sectors, is an integer, is the number of phases of the multiphase sinusoidal excitation signal. The multiphase sinusoidal excitation signal is sequentially numbered from 1 in the phase sequence, and the arrangement of the sectors is sequentially numbered from 1 along the sectors. for the first sector, a first phase sinusoidal excitation signal is applied, for the second sector, a second phase sinusoidal excitation signal is applied, for the third sector, a third phase sinusoidal excitation signal is applied, for the fourth sector, a fourth phase sinusoidal excitation signal is applied, .

6. The design structure of a lithium niobate thin film MEMS traveling wave motor of claim 5, wherein, The multiphase sinusoidal excitation signal is a four-phase sinusoidal excitation signal, and the amplitudes and frequencies of the four-phase sinusoidal excitation signals are the same, and the phases of the first-phase sinusoidal excitation signal to the fourth-phase sinusoidal excitation signal are sequentially different by 90 degrees.

7. The design structure of a lithium niobate thin film MEMS traveling wave motor of claim 6, wherein, The piezoelectric driving layer is divided into 12 sectors.

8. A method for fabricating a lithium niobate thin film MEMS traveling wave motor design structure as claimed in any one of claims 1 to 7, wherein, The method comprises the following steps: A wafer is prepared, the wafer is an LN-SOI wafer or an LN-SI wafer, and the wafer is sequentially composed of a first electrode layer, a lithium niobate layer, a second electrode layer and a structure layer from top to bottom; After performing photolithography on the top of the wafer, etching is performed to achieve patterning of the upper electrode, thereby obtaining the upper electrode; Deep silicon etching process is performed on the bottom of the wafer to generate the traveling wave micro-actuator with displacement amplification tooth structure and expose the lower electrode; The lithium niobate layer is etched by using a laser etching method to form a bare core structure and release.

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