Wafer drying apparatus and wafer drying system
By using rotatable circular and annular drying plates and components in the wafer drying apparatus, the gas flow direction is ensured to be from the center to the edge, which solves the problem of bubble defects in the room temperature bonding wafer drying process, and improves the drying effect and product yield.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- NEXCHIP SEMICON CO LTD
- Filing Date
- 2025-06-19
- Publication Date
- 2026-06-23
AI Technical Summary
During the drying process of wafers bonded at room temperature, the spin drying method can easily cause gaps to appear at the wafer bonding interface, allowing gas to enter and form bubbles or cavities, which affects product yield.
The system employs circular and annular drying plates that can rotate around the same center. The circular drying plate has air jet holes, and the annular drying plate has air suction holes. The gas flow direction is from the center of the wafer to the edge. Combined with the rotation of the crystal face and crystal back drying components, it ensures drying without dead angles.
This reduces the probability of gas entering the wafer bonding interface, improves drying effect and uniformity, and increases product yield.
Smart Images
Figure CN224398216U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a wafer drying apparatus and a wafer drying system. Background Technology
[0002] After the wafers are bonded, it is necessary to check whether there are air bubbles between the two wafers to monitor whether the bonded wafers are qualified, and thus monitor the stability of the wafer bonding process.
[0003] Typically, ultrasonic testing in a deionized water environment is used to detect air bubbles at the wafer bonding interface. After testing, the wafer is dried to prepare for subsequent processing steps. However, for wafers bonded at room temperature, the ultrasonic testing system uses rotation for drying, which can cause tiny gaps to appear at the bonding interface under the rotational force. This allows gas to enter the bonding interface and form bubbles or cavities. Utility Model Content
[0004] Therefore, it is necessary to provide a wafer drying apparatus and a wafer drying system for drying the laminated wafers to reduce the risk of gaps appearing at the bonding interface at the wafer edges.
[0005] This application provides a wafer drying apparatus for drying wafers that have undergone bonding processes, including:
[0006] The collection unit includes a wafer carrier stage;
[0007] A wafer drying unit includes a crystal face drying component and a crystal back drying component. Both the crystal face drying component and the crystal back drying component include a circular drying plate and an annular drying plate that can rotate around the same center. The annular drying plate is sleeved around the circular drying plate. The circular drying plate is provided with multiple air jet holes, and the annular drying plate is provided with multiple air suction holes.
[0008] During the drying process of the wafer set on the wafer carrier, the back-side drying assembly and the front-side drying assembly are respectively arranged in parallel on both sides of the wafer and rotate relative to the wafer. The rotation axis of the back-side drying assembly and the front-side drying assembly passes through the center of the circle and extends in a direction perpendicular to the surface of the wafer. The jet hole blows gas onto the surface of the wafer, and the suction hole absorbs the blown gas.
[0009] In one embodiment, the air jet holes are uniformly disposed around the center on the circular drying plate, and the air intake holes are uniformly disposed around the center on the annular drying plate.
[0010] In one embodiment, the annular drying sheet and the circular drying sheet rotate at a constant speed in a clockwise or counterclockwise direction.
[0011] In one embodiment, the rotational speed of the annular drying sheet and the circular drying sheet ranges from 180° / min to 360° / min.
[0012] In one embodiment, the gas ejected from the jet hole includes an inert gas, and the temperature range of the gas ejected from the jet hole is 80°C to 100°C.
[0013] In one embodiment, the diameter of the circular drying sheet is greater than or equal to the diameter of the wafer, and the diameter of the circular drying sheet is less than or equal to the inner ring diameter of the annular drying sheet.
[0014] In one embodiment, the carrier collection unit further includes a liquid collection tank disposed on the wafer carrier stage and located directly below the wafer.
[0015] Accordingly, this application also provides a wafer drying system for drying wafers that have undergone bonding processes, including:
[0016] Wafer wetting apparatus, including a wetting tank;
[0017] A wafer transfer device, including a clamping assembly and a pushing assembly;
[0018] The wafer drying apparatus described above includes a carrier collection unit and a wafer drying unit;
[0019] The process of drying wafers after bonding using a wafer drying system includes:
[0020] The wafer is placed in the wetting tank, allowing the liquid in the wetting tank to wet the surface of the wafer. The wetting wafer is then transferred to the carrier collection unit using the clamping assembly, and the carrier collection unit is pushed into the wafer drying unit using the pushing assembly. The wafer drying unit then dries the wetted wafer.
[0021] In one embodiment, the liquid in the wetting tank comprises an aqueous solution of isopropanol.
[0022] In one embodiment, the temperature range of the liquid in the wetting tank includes 50°C to 80°C.
[0023] The unexpected effect of this application is that by setting up a circular drying plate and a ring-shaped drying plate that can rotate around the same center, and setting multiple air jet holes on the circular drying plate and multiple air suction holes on the ring-shaped drying plate, it is ensured that the gas flow direction during the drying process is from the center of the wafer to the edge of the wafer from the inside out, thereby reducing the probability of gas entering the wafer bonding interface and forming bubble defects; by setting interface drying components and back drying components that rotate relative to the wafer on both sides of the wafer, it is ensured that there are no dead corners during the wafer drying process, improving the wafer drying effect and drying uniformity, thereby improving product yield. Attached Figure Description
[0024] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0025] Figure 1 This is a schematic diagram of a wafer structure that has undergone room-temperature bonding in a related technology.
[0026] Figure 2 for Figure 1 The diagram shows a cross-sectional view of the wafer structure along the AB direction.
[0027] Figure 3 This is a schematic diagram of the structure of a wafer drying apparatus provided in one embodiment of this application.
[0028] Figure 4 This is a schematic diagram of the structure of the crystal face drying component and the crystal back drying component in a wafer drying apparatus provided in one embodiment of this application.
[0029] Figure 5 This is a cross-sectional structural diagram of the collection unit in a wafer drying apparatus provided in one embodiment of this application.
[0030] Figure 6 This is a schematic diagram of the structure of a wafer drying system provided in one embodiment of this application.
[0031] The reference numerals in the accompanying drawings include: 100a - first wafer; 100b - second wafer; 110 - bonding interface; 110a - edge region; 110b - bubble; 200 - wafer drying device; 210 - carrier collection unit; 211 - wafer carrier stage; 212 - liquid collection tank; 220 - wafer drying unit; 221 - crystal face drying assembly; 222 - crystal back drying assembly; C1 - circular drying sheet; C2 - annular drying sheet; a - air jet hole; b - air suction hole; z - support part; W - wafer; 300 - wafer drying system; 310 - wafer wetting device; 311 - wetting tank; 320 - wafer transfer device; 321 - clamping assembly; 322 - pushing assembly. Detailed Implementation
[0032] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.
[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
[0034] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, parts, regions, layers, doping types, and / or portions, these elements, parts, regions, layers, doping types, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, part, region, layer, doping type, or portion from another element, part, region, layer, doping type, or portion. Therefore, without departing from the teachings of this application, the first element, component, region, layer, doping type, or portion discussed below may be represented as a second element, component, region, layer, or portion; for example, the first doping type may be referred to as the second doping type, and similarly, the second doping type may be referred to as the first doping type; the first doping type and the second doping type are different doping types, for example, the first doping type may be P-type and the second doping type may be N-type, or the first doping type may be N-type and the second doping type may be P-type.
[0035] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, the element or feature described as “below,” “under,” or “below” will be oriented “above” the other element or feature. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. Furthermore, the device may also include other orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptive terms used herein will be interpreted accordingly.
[0036] When used herein, the singular forms of “a,” “an,” and “ / the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising / including” or “having,” etc., specify the presence of the stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. Meanwhile, in this specification, the term “and / or” includes any and all combinations of the associated listed items.
[0037] To monitor the stability of the wafer bonding process, it is typically necessary to inspect the bonded wafers. Common methods for detecting air bubbles between bonded wafers include ultrasonic testing in a deionized water environment. This allows for rapid, non-contact, and non-destructive bubble detection, ensuring the wafer bonding quality meets process requirements. Since ultrasonic testing is performed in a deionized water environment, the wafers must be dried afterward to prepare for subsequent processing steps.
[0038] In typical testing processes, wafers are usually dried using a spin-drying method. This method is more suitable for wafers bonded using high-temperature annealing bonding. However, for wafers that have only undergone room-temperature bonding (between 20°C and 28°C) without high-temperature annealing bonding, the spin-drying process can cause tiny gaps to appear at the bonding interface between the two wafers due to the rotational force. This allows ambient gas to enter the gaps between the bonding interfaces and form bubbles or cavities.
[0039] Figure 1 This is a schematic diagram of the structure of a wafer bonded at room temperature. Figure 2 for Figure 1 A schematic diagram of the cross-sectional structure along the AB direction. (See attached diagram.) Figure 1 and Figure 2 A bonding interface 110 is formed between the first wafer 100a and the second wafer 100b after room temperature bonding. During the drying process of the bonded first wafer 100a and the second wafer 100b by spin drying, tiny gaps (not shown in the figure) are easily generated at the edge region 110a of the bonding interface 110. Gas in the environment enters the gap between the bonding interfaces and forms bubbles 110b.
[0040] However, the presence of bubble defects at the wafer bonding interface increases the risk of edge chipping during subsequent processes. In severe cases, it can even expose the metal interconnects within the wafer and cause metal ion contamination, thereby greatly affecting the product yield.
[0041] To address the aforementioned issues, this application provides a wafer drying apparatus and a wafer drying system for drying laminated wafers to reduce the risk of bubble defects at the bonding interface at the wafer edges.
[0042] Figure 3 This is a schematic diagram of the structure of a wafer drying apparatus provided in one embodiment of this application. Figure 4 This is a schematic diagram of the structure of the crystal face drying component and the crystal back drying component in a wafer drying apparatus provided in one embodiment of this application. (See also...) Figure 3 and Figure 4 One embodiment of this application provides a wafer drying apparatus 200 for drying a wafer W after the bonding process has been completed. The wafer drying apparatus 200 includes a carrier collection unit 210 and a wafer drying unit 220. The carrier collection unit 210 includes a wafer carrier stage 211 for carrying the wafer W after the bonding process has been completed. The wafer drying unit 220 includes a crystal face drying component 221 and a crystal back drying component 222. Both the crystal face drying component 221 and the crystal back drying component 222 include a circular drying plate C1 and an annular drying plate C2 that can rotate around the same center. The annular drying plate C2 is sleeved around the circular drying plate C1. The circular drying plate C1 is provided with a plurality of air jet holes a, and the annular drying plate C2 is provided with a plurality of air suction holes b.
[0043] Continue reading Figure 3 and Figure 4 During the drying process of the wafer W placed on the wafer carrier stage 211, the back drying assembly 222 and the front drying assembly 221 are respectively arranged parallel to each other on both sides of the wafer W and rotate relative to the wafer W. The rotation axes of the back drying assembly 222 and the front drying assembly 221 (i.e., Figure 3 The dotted line in the middle) passes through the center of the circle (i.e. Figure 3 The central rotation axis is located at the intersection of the back-side drying assembly 222 and the front-side drying assembly 221. The center of the front-side drying assembly 221 is obscured by the wafer W and is not shown. The center of the back-side drying assembly 222 is point O. The assembly extends in a direction perpendicular to the surface of the wafer W. The jet hole a blows gas onto the surface of the wafer W, and the suction hole b absorbs the blown gas.
[0044] The wafer drying apparatus described above, by setting up a circular drying plate and an annular drying plate that can rotate around the same center, and setting multiple air jet holes on the circular drying plate and multiple air suction holes on the annular drying plate, ensures that the gas flow direction during the drying process is from the center of the wafer to the edge of the wafer from the inside out, thereby reducing the probability of gas entering the wafer bonding interface and forming bubble defects; by setting interface drying components and back drying components that rotate relative to the wafer on both sides of the wafer, it ensures that there are no dead corners during the wafer drying process, improving the wafer drying effect and drying uniformity, and thus improving product yield.
[0045] See Figure 3 and Figure 5 ( Figure 5 for Figure 3(A cross-sectional view of the carrier collection unit 210 along the MN direction) In one embodiment, the carrier collection unit 210 further includes a liquid collection tank 212, which is disposed on the wafer carrier stage 211 and located directly below the wafer W, to collect liquid dripping from the surface of the wafer W, thereby further improving the drying effect of the wafer drying device.
[0046] It should be noted that, in order to better demonstrate the specific structure of the liquid collection tank 212, Figure 5 The wafer carrier stage 211 and the liquid collection tank 212 are provided with different filling patterns for distinction. It should also be emphasized that in other embodiments of this application, the specific structure and morphology of the liquid collection tank can be adjusted according to actual needs, and this application does not impose any limitations on this.
[0047] Continue reading Figure 3 In one embodiment, both the crystal face drying assembly 221 and the crystal back drying assembly 222 include a support portion z to ensure that the crystal back drying assembly 222 and the crystal face drying assembly 221 are respectively arranged parallel to each other on both sides of the wafer W, while ensuring that the rotation axis of the crystal back drying assembly 222 and the crystal face drying assembly 221 (i.e., Figure 3 The dotted line in the middle) passes through the center of the circle (i.e. Figure 3 The central rotation axis intersects with the crystal back drying assembly 222 and the crystal face drying assembly 221, wherein the center of the crystal face drying assembly 221 is obscured by the wafer W and is not shown, and the center of the crystal back drying assembly 222 is point O) and extends in a direction perpendicular to the surface of the wafer W.
[0048] In one embodiment, both the circular and annular drying plates of the crystal face drying assembly are rotatably disposed within a housing (not shown in the figure). The housing covers the side of the circular drying plate without air jet holes and the side of the annular drying plate without air intake holes. Simultaneously, the side of the housing away from the circular and annular drying plates is connected to a support portion. It should be noted that since the crystal back drying assembly is structurally and functionally identical to the crystal face drying assembly, its specific structure will not be described separately here.
[0049] In one embodiment, the circular drying plate, the annular drying plate, the housing, and the support portion included in the crystal surface drying assembly are all detachably connected to improve the portability of the crystal surface drying assembly. Optionally, the support portion has a lifting function; for example, the support portion can be a liftable bracket composed of multiple lifting rods to adjust the relative position between the circular and annular drying plates and the wafer, thereby helping to improve the drying effect of the wafer.
[0050] In one embodiment, the support portion of the face drying assembly, the support portion of the back drying assembly, and the wafer carrier are interconnected to fix the relative positions of the face drying assembly, the back drying assembly, and the wafer, facilitating wafer drying. Optionally, the support portions of the face drying assembly, the back drying assembly, and the wafer carrier are detachably connected to improve the flexibility of the wafer drying apparatus.
[0051] It should be noted that when the support parts of the crystal face drying assembly, the crystal back drying assembly, and the wafer carrier are detachably connected, the crystal face drying assembly, the wafer carrier, and the crystal back drying assembly can be separated first, and their relative positions adjusted. When the circular drying plates in the crystal face drying assembly and the crystal back drying assembly are parallel to the wafer on the wafer carrier, and the center of the wafer, the center of the circular drying plate in the crystal face drying assembly, and the center of the circular drying plate in the crystal back drying assembly are all on the same horizontal line (at this time, the crystal face drying assembly, the wafer carrier, and the crystal back drying assembly are aligned), the crystal face drying assembly, the wafer carrier, and the crystal back drying assembly are connected to each other to fix the relative positions of the three components, thereby reducing or avoiding the situation where the positional deviation between different components affects the drying effect during subsequent drying processes.
[0052] See Figure 4 In one embodiment, the air jet holes a are uniformly disposed around the center (i.e., the geometric center of the circular drying plate C1) on the circular drying plate C1, and the air suction holes b are uniformly disposed around the center (i.e., the geometric center of the annular drying plate C2) on the annular drying plate C2.
[0053] In one embodiment, all the jet holes on the circular drying plate are divided into several groups. Each jet hole in the same group is equidistant from the center of the circular drying plate, and the angle formed by the lines connecting any two adjacent jet holes in the same group to the center is the same. Similarly, all the suction holes on the annular drying plate are divided into several groups. Each suction hole in the same group is equidistant from the center of the annular drying plate, and the angle formed by the lines connecting any two adjacent suction holes in the same group to the center is the same. Optionally, the angle formed by the lines connecting any two adjacent jet holes (or suction holes) in the same group to the center can be, for example, 30°, 45°, or 60°, or any angle between 0° and 180°. The specific angle value can be selected according to actual needs, and this application does not impose any limitations on it.
[0054] In one embodiment, both the annular and circular drying plates rotate at a uniform speed in a clockwise or counterclockwise direction. For example, the annular and circular drying plates can both rotate at the same speed in the same direction, or they can both rotate at the same speed in opposite directions. In other embodiments of this application, the rotation speeds and directions of the annular and circular drying plates can be different. The specific rotation speeds and directions can be set according to actual needs, as long as it ensures that the wafer surface can be uniformly brushed and the wafer dried. Optionally, the rotation speed range of the annular and circular drying plates includes 180° / min to 360° / min.
[0055] In one embodiment, the gas ejected from the jet hole includes an inert gas, and the temperature range of the gas ejected from the jet hole is 80°C to 100°C, so as to reduce or avoid corrosion or contamination of the wafer while drying the wafer.
[0056] In one embodiment, the diameter of the circular drying sheet is greater than or equal to the diameter of the wafer, and the diameter of the circular drying sheet is less than or equal to the inner ring diameter of the annular drying sheet, so that the circular drying sheet can be embedded in the annular drying sheet, and the air vents on the circular drying sheet can blow away all areas of the wafer, and the air vents on the annular drying sheet can suck away the blown gas, thereby reducing or avoiding the probability of gas entering the wafer bonding interface, and thus reducing or avoiding the formation of bubble defects in the wafer bonding interface.
[0057] Accordingly, see Figure 3 and Figure 6 One embodiment of this application also provides a wafer drying system 300 for drying wafers that have completed the bonding process. The wafer drying system 300 includes a wafer wetting device 310, a wafer transfer device 320, and a wafer drying device 200 as described above. The wafer wetting device 310 includes a wetting tank 311; the wafer transfer device 320 includes a clamping component 321 and a pushing component 322; the wafer drying device 200 includes a carrier collection unit 210 and a wafer drying unit 220. The process of drying wafers that have completed the bonding process using the wafer drying system 300 includes: placing the wafer W into the wetting tank 311, allowing the liquid in the wetting tank 311 to wet the surface of the wafer W; using the clamping component 321 to transfer the wetted wafer W to the carrier collection unit 210; and using the pushing component 322 to push the carrier collection unit 210 into the wafer drying unit 220, whereby the wetted wafer W is dried by the wafer drying unit 220.
[0058] As described above, the wafer drying system first wets the wafer using a wafer wetting device, then transfers the wafer to a wafer drying device using a wafer transfer device, where the wafer drying device dries the wafer. This reduces the mechanical forces experienced by the wafer during the drying process, ensuring that the wafer edges remain tightly adhered. Simultaneously, the wafer drying device in the system ensures that there are no dead zones during the drying process, improving the drying effect and uniformity, thereby increasing product yield.
[0059] In one embodiment, the liquid in the infiltration tank comprises an aqueous solution of isopropanol (IPA). Optionally, the temperature range of the liquid in the infiltration tank includes 50°C to 80°C.
[0060] See Figures 3 to 5 In one embodiment, the carrier collection unit 210 includes a wafer carrier stage 211 and a liquid collection tank 212. The wafer carrier stage 211 is used to carry the wafer W after the bonding process is completed, and the liquid collection tank 212 is used to collect the liquid dripping from the surface of the wafer W. The wafer drying unit 220 includes a crystal surface drying component 221 and a crystal back drying component 222. Both the crystal surface drying component 221 and the crystal back drying component 222 include a circular drying plate C1 and an annular drying plate C2 that can rotate around the same center. The annular drying plate C2 is sleeved around the circular drying plate C1. The circular drying plate C1 is provided with multiple air jet holes a, and the annular drying plate C2 is provided with multiple air suction holes b. During the drying process of the wafer W set on the wafer carrier stage 211, the crystal back drying component 222 and the crystal surface drying component 221 are respectively arranged parallel to both sides of the wafer W and rotate relative to the wafer W. The rotation axis of the crystal back drying component 222 and the crystal surface drying component 221 (i.e., Figure 3 The dotted line in the middle passes through the center of the circle ( Figure 3 The center of the back drying component 222 is point O, and the center of the surface drying component 221 is obscured by the wafer W and is not shown) and extends in a direction perpendicular to the surface of the wafer W. The jet hole a blows gas onto the surface of the wafer W, and the suction hole b absorbs the blown gas.
[0061] It should be noted that the wafer drying system described in this application uses the wafer drying device provided in the aforementioned application. The specific structure and working principle of the wafer drying device have been described in detail in the foregoing content, so they will not be repeated here.
[0062] The following section uses a wafer wetting device containing an isopropanol aqueous solution as an example to illustrate the application of the wafer drying system provided in this application.
[0063] First, the wafer is placed in the wetting tank of the wafer wetting device. The wetting tank contains an isopropanol aqueous solution at 50°C to 80°C, so that the water remaining on the wafer surface is mixed with the isopropanol aqueous solution.
[0064] Next, the wafer is removed from the wetting tank using the clamping device in the wafer transfer device and transferred to the wafer carrier stage in the carrier collection unit. Then, the wafer carrier stage is pushed into the wafer drying unit using the pushing device in the wafer transfer device, so that the center of the wafer is aligned with the center of the crystal face drying component and the crystal back drying component in the wafer drying unit.
[0065] Subsequently, all the jet nozzles within the wafer drying unit continuously spray inert gas at 80°C to 100°C onto the wafer surface, while simultaneously, all the suction nozzles within the wafer drying unit continuously draw in air and remove the water vapor generated by the evaporation of the IPA aqueous solution from the crystal face and back surfaces. During this drying process, the crystal face drying assembly and the crystal back drying assembly can rotate simultaneously and uniformly (at a speed between 180° / min and 360° / min) in the same direction (clockwise or counterclockwise), or they can rotate simultaneously and uniformly in different directions, ensuring uniform heating of the wafer and improving the drying effect and uniformity.
[0066] The unexpected effect of this application is that by setting up a circular drying plate and a ring-shaped drying plate that can rotate around the same center, and setting multiple air jet holes on the circular drying plate and multiple air suction holes on the ring-shaped drying plate, it is ensured that the gas flow direction during the drying process is from the center of the wafer to the edge of the wafer from the inside out, thereby reducing the probability of gas entering the wafer bonding interface and forming bubble defects; by setting interface drying components and back drying components that rotate relative to the wafer on both sides of the wafer, it is ensured that there are no dead corners during the wafer drying process, improving the wafer drying effect and drying uniformity, thereby improving product yield.
[0067] In the description of this specification, the references to terms such as "some embodiments," "other embodiments," "ideal embodiments," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example that are included in at least one embodiment or example of this application. In this specification, the illustrative descriptions of the above terms do not necessarily refer to the same embodiments or examples.
[0068] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features of the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0069] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these modifications and improvements all fall within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the appended claims.
Claims
1. A wafer drying apparatus for drying wafers after bonding processes, characterized in that, include: The collection unit includes a wafer carrier stage; A wafer drying unit includes a crystal face drying component and a crystal back drying component. Both the crystal face drying component and the crystal back drying component include a circular drying plate and an annular drying plate that can rotate around the same center. The annular drying plate is sleeved around the circular drying plate. The circular drying plate is provided with multiple air jet holes, and the annular drying plate is provided with multiple air suction holes. During the drying process of the wafer set on the wafer carrier, the back-side drying assembly and the front-side drying assembly are respectively arranged in parallel on both sides of the wafer and rotate relative to the wafer. The rotation axis of the back-side drying assembly and the front-side drying assembly passes through the center of the circle and extends in a direction perpendicular to the surface of the wafer. The jet hole blows gas onto the surface of the wafer, and the suction hole absorbs the blown gas.
2. The wafer drying apparatus according to claim 1, characterized in that, The air jet holes are evenly arranged around the center on the circular drying plate, and the air intake holes are evenly arranged around the center on the annular drying plate.
3. The wafer drying apparatus according to claim 1, characterized in that, The annular drying sheet and the circular drying sheet rotate at a constant speed in a clockwise or counterclockwise direction.
4. The wafer drying apparatus according to claim 1 or 3, characterized in that, The rotational speed range of the annular drying sheet and the circular drying sheet includes 180° / min to 360° / min.
5. The wafer drying apparatus according to claim 1, characterized in that, The gas ejected from the jet hole includes an inert gas, and the temperature range of the gas ejected from the jet hole is 80℃~100℃.
6. The wafer drying apparatus according to claim 1, characterized in that, The diameter of the circular drying sheet is greater than or equal to the diameter of the wafer, and the diameter of the circular drying sheet is less than or equal to the inner ring diameter of the annular drying sheet.
7. The wafer drying apparatus according to claim 1, characterized in that, The carrier collection unit also includes a liquid collection tank, which is disposed on the wafer carrier platform and located directly below the wafer.
8. A wafer drying system for drying wafers after bonding processes, characterized in that, include: Wafer wetting apparatus, including a wetting tank; A wafer transfer device, including a clamping assembly and a pushing assembly; The wafer drying apparatus according to any one of claims 1 to 7 includes a carrier collection unit and a wafer drying unit; The process of drying wafers after bonding using a wafer drying system includes: The wafer is placed in the wetting tank, allowing the liquid in the wetting tank to wet the surface of the wafer. The wetting wafer is then transferred to the carrier collection unit using the clamping assembly, and the carrier collection unit is pushed into the wafer drying unit using the pushing assembly. The wafer drying unit then dries the wetted wafer.
9. The wafer drying system according to claim 8, characterized in that, The liquid in the wetting tank includes an aqueous solution of isopropanol.
10. The wafer drying system according to claim 8, characterized in that, The temperature range of the liquid in the wetting tank is 50℃~80℃.