Wafer and substrate mounting heating platform based on nitrogen protection

Abstract

The invention relates to the technical field of semiconductor packaging, in particular to a wafer and substrate mounting heating platform based on nitrogen protection, which comprises a support frame, and a heat insulation plate and a heating table which are arranged on the support frame, the heating table is composed of a lower heating plate and an upper heat conduction plate, and the upper surface of the heating table is provided with a vacuum suction port and a nitrogen outlet. A plurality of independent air channels are formed in the heat insulation plate and the heat conduction plate and communicated with the vacuum suction port, the nitrogen outlet, an external vacuum pump and an external nitrogen source respectively. The substrate is uniformly heated through the heating table so as to enhance the viscidity of the silver paste and realize firm mounting; the nitrogen channel is integrated in the heating area, preheated nitrogen is output and can be rapidly emitted upwards, a local oxygen-free environment is formed around a mounting surface, and oxidation of a substrate and a wafer is effectively prevented. The platform integrates the functions of heating, adsorption and gas protection, is compact in structure, and is suitable for a high-quality wafer mounting process in semiconductor packaging.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor packaging, and in particular to a wafer and substrate mounting and heating platform based on nitrogen protection. BACKGROUND

[0002] In the process of semiconductor packaging automation, it is usually necessary to take the wafer out of the wafer disc or carrier disc and mount it on the substrate. The traditional mounting process relies on mechanical pressure to realize the combination of the wafer and the substrate. However, in the normal temperature environment, it is difficult to ensure the firmness of the mounting only by relying on the pressure, especially when silver paste or other adhesive materials are used, the insufficient adhesion of which can easily lead to insufficient mounting strength, affecting the packaging quality and reliability.

[0003] In addition, during the mounting process, the mounting surface of the substrate and the wafer is often directly exposed to the air, which is easy to react with oxygen, leading to oxidation, and thus affecting the electrical performance and long-term stability.

[0004] The information disclosed in this BACKGROUND section is only intended to enhance the understanding of the general background of the present disclosure and should not be taken as an acknowledgment or any form of suggestion that this information constitutes prior art. SUMMARY

[0005] The present application provides a patent name, which can effectively solve the problems in the background art.

[0006] In order to achieve the above purpose, the technical scheme adopted by the present application is: A wafer and substrate mounting and heating platform based on nitrogen protection, comprising a support frame and a heat insulation plate arranged thereon, a heating table is arranged on the heat insulation plate, a vacuum suction port and a nitrogen outlet are arranged on the upper surface of the heating table; A first air duct and a second air duct are formed in the heat insulation plate, the vacuum suction port and the nitrogen outlet are respectively connected with the first air duct and the second air duct, and a first interface and a second interface are respectively arranged on the side surface of the heat insulation plate corresponding to the first air duct and the second air duct.

[0007] Further, the heating table comprises a heating plate and a heat conducting plate arranged thereon, a heating device is arranged on the heating plate, and the vacuum suction port and the nitrogen outlet are arranged on the heat conducting plate; A first through hole and a second through hole are respectively arranged on the upper and lower sides of the heating plate, the first air duct is connected with the vacuum suction port through the first through hole, and the second air duct is connected with the nitrogen outlet through the second through hole.

[0008] Further, the heating device comprises a plurality of thermocouples arranged side by side, and the plurality of thermocouples are uniformly arranged.

[0009] Further, a third air channel and a fourth air channel are arranged in the heat-conducting plate, and the vacuum suction port and the nitrogen outlet are communicated with the third air channel and the fourth air channel respectively. The first air channel is communicated with the third air channel through the first through hole, and the second air channel is communicated with the fourth air channel through the second through hole.

[0010] Further, the vacuum suction port and the nitrogen outlet are arranged in a plurality of ways along a first direction, and the first air channel, the second air channel, the third air channel and the fourth air channel are arranged along a second direction, and correspond to the vacuum suction port and the nitrogen outlet arranged in a plurality of ways along the first direction respectively, and the first direction is arranged perpendicularly to the second direction.

[0011] Further, the vacuum suction port and the nitrogen outlet are arranged in a plurality of ways along a second direction, and the plurality of vacuum suction ports are communicated with the first through hole through the same third air channel, and the plurality of nitrogen outlets are communicated with the second through hole through the same fourth air channel.

[0012] Further, a ring groove is arranged on the upper surface of the heating table corresponding to the vacuum suction port, and the vacuum suction port is arranged in the ring groove.

[0013] Further, a heat-conducting seat is arranged protruding on the upper surface of the heating table, the vacuum suction port is arranged on the heat-conducting seat, and the nitrogen outlet is arranged on the upper surface of the heating table close to the heat-conducting seat.

[0014] Further, a first sealing structure is arranged at the connection between the first air channel and the first through hole, and a second sealing structure is arranged at the connection between the first through hole and the third air channel. The first sealing structure and the second sealing structure are the same, comprising oppositely arranged upper and lower sink heads, a guide ring is arranged in the lower sink head, the outer side of the guide ring is arranged as an inclined surface, and the inclined surface is arranged towards the upper sink head, the inner wall section of the upper sink head is in a circular arc structure, and the central angle thereof is greater than 90°.

[0015] Further, the support frame comprises a support plate and a heating substrate arranged thereon, and the heat insulation plate is arranged on the heating substrate.

[0016] The technical scheme of the present application can achieve the following technical effects: This invention effectively solves the problems of poor mounting due to insufficient heating of the substrate and wafer, and oxidation due to exposure to air, in traditional mounting processes by highly integrating heating, vacuum adsorption, and nitrogen protection into a compact platform. The platform adopts a layered structure of heating plate and heat-conducting plate, combined with multiple evenly distributed thermocouples, to ensure that the heating platform has a fast response and excellent thermal uniformity, providing the optimal activation temperature for the silver paste, thereby greatly improving the mounting adhesion.

[0017] The gas path design allows the nitrogen delivery channel to run directly through the heating area, preheating the output nitrogen and making it more efficient at dissipating upwards. This quickly removes the air around the mounting surface, creating a uniform and stable local oxygen-free environment, providing efficient and comprehensive anti-oxidation protection for the substrate and wafer. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of a wafer and substrate mounting heating platform based on nitrogen protection. Figure 2 This is a schematic diagram of an explosion of a nitrogen-protected wafer and substrate mounting heating platform. Figure 3 This is a schematic diagram of the insulation board structure; Figure 4 This is a schematic diagram of the heating platform. Figure 5 A schematic diagram of the air passage for a vacuum suction port; Figure 6 This is a schematic diagram of the gas duct for nitrogen outlet; Figure 7 for Figure 5 Schematic diagram of the first sealing structure at point A; Figure 8 This is a schematic diagram of the operation of the mounting heating platform.

[0020] Reference numerals: 1. Support frame; 11. Support plate; 12. Heating base plate; 2. Heat insulation plate; 21. First air passage; 22. Second air passage; 23. First interface; 24. Second interface; 3. Heating platform; 31. Heating plate; 311. First through hole; 312. Second through hole; 32. Heat-conducting plate; 321. Third air passage; 322. Fourth air passage; 33. Heating device; 331. Thermocouple; 34. Vacuum suction port; 341. Annular groove; 35. Nitrogen outlet; 36. Heat-conducting base; 41. First sealing structure; 411. Upper countersunk head; 412. Lower countersunk head; 413. Guide ring; 42. Second sealing structure. Detailed Implementation

[0021] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0022] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0023] This invention discloses a wafer and substrate mounting heating platform based on nitrogen protection, which is used to solve the problems of poor substrate and wafer mounting and easy oxidation in air during semiconductor packaging.

[0024] like Figure 1 As shown, it includes a support frame 1 and a heat insulation plate 2 disposed thereon. A heating platform 3 is disposed on the heat insulation plate 2. A vacuum suction port 34 and a nitrogen outlet 35 are disposed on the upper surface of the heating platform 3. A first air passage 21 and a second air passage 22 are opened inside the heat insulation plate 2. The vacuum suction port 34 and the nitrogen outlet 35 are respectively connected to the first air passage 21 and the second air passage 22. A first interface 23 and a second interface 24 are respectively disposed on the side of the heat insulation plate 2 corresponding to the first air passage 21 and the second air passage 22.

[0025] In this invention, the vacuum suction port 34 is used to firmly adsorb the substrate during the mounting process to ensure its stable position; the nitrogen outlet 35 is used to continuously output nitrogen to form a local oxygen-free environment around the mounting surface of the substrate and the wafer, thereby reducing the occurrence of oxidation.

[0026] In the specific implementation process, such as Figure 3As shown, to achieve the delivery of vacuum and nitrogen, a first air passage 21 and a second air passage 22, which are independent of each other, are provided inside the heat insulation plate 2. The air intake is connected to the first air passage 21, and the nitrogen outlet 35 is connected to the second air passage 22. The first interface 23 is used to connect to an external vacuum pump to provide suction force; the second interface 24 is used to connect to an external nitrogen supply pump to provide high-purity nitrogen. Integrating the gas passages inside the heat insulation plate 2 results in a compact structure and a neat pipeline layout.

[0027] In this embodiment, as Figure 2 As shown, the heating platform 3 adopts a layered design, including a heating plate 31 and a heat-conducting plate 32 disposed thereon. A heating device 33 is disposed on the heating plate 31, and a vacuum suction port 34 and a nitrogen outlet 35 are both disposed on the heat-conducting plate 32. A first through hole 311 and a second through hole 312 are respectively provided on the upper and lower sides of the heating plate 31. The first air passage 21 is connected to the vacuum suction port 34 through the first through hole 311, and the second air passage 22 is connected to the nitrogen outlet 35 through the second through hole 312.

[0028] The heating plate 31 serves as a concentrated heat source area, facilitating centralized management and control of heat. The heat-conducting plate 32, mounted on the heating plate 31, is made of a material with high thermal conductivity, enabling it to quickly and evenly transfer heat to the entire upper surface, avoiding local overheating or undercooling and ensuring uniform heating of the substrate.

[0029] To connect the air passage between the heat-conducting plate 32 and the heat insulation plate 2, a first through hole 311 and a second through hole 312 are provided on the heating plate 31 between them, extending through its upper and lower sides. The first air passage 21 in the heat insulation plate 2 is connected to the vacuum suction port 34 on the heat-conducting plate 32 through the first through hole 311; similarly, the second air passage 22 is connected to the nitrogen outlet 35 on the heat-conducting plate 32 through the second through hole 312. This forms a complete and closed gas flow channel from the external gas source to the working surface, ensuring the efficiency and sealing of gas delivery.

[0030] Furthermore, the heating device 33 includes multiple thermocouples 331 arranged in parallel, with the multiple thermocouples 331 evenly distributed. The parallel operation of multiple thermocouples 331 not only increases the heating power but also, combined with the temperature control system, achieves precise closed-loop control of the temperature on the three sides of the heating platform. The even distribution further ensures the uniformity of the thermal field on the platform.

[0031] In this embodiment, as Figure 4 As shown, a third air passage 321 and a fourth air passage 322 are provided within the heat-conducting plate 32, and the vacuum suction port 34 and the nitrogen outlet 35 are respectively connected to the third air passage 321 and the fourth air passage 322; see further details. Figure 5 and Figure 6As shown, the first air passage 21 is connected to the third air passage 321 through the first through hole 311, and the second air passage 22 is connected to the fourth air passage 322 through the second through hole 312. The air passages are arranged within the heat-conducting plate 32 to facilitate a more rational layout of the vacuum suction and nitrogen outlet 35.

[0032] To accommodate simultaneous production at multiple workstations and improve efficiency, multiple vacuum suction ports 34 and nitrogen outlets 35 are provided along the first direction. The first air passage 21, the second air passage 22, the third air passage 321 and the fourth air passage 322 are all provided along the second direction, and multiple vacuum suction ports 34 and nitrogen outlets 35 are provided along the first direction respectively. The first direction is perpendicular to the second direction.

[0033] Multiple vacuum suction ports 34 and nitrogen outlets 35 are provided along the second direction. Multiple vacuum suction ports 34 are connected to the first through hole 311 through the same third air passage 321, and multiple nitrogen outlets 35 are connected to the second through hole 312 through the same fourth air passage 322.

[0034] In practice, a single vacuum source or a single nitrogen source can serve multiple workstations simultaneously, which not only simplifies the system complexity but also greatly improves work efficiency.

[0035] In this embodiment, an annular groove 341 is formed on the upper surface of the heating stage 3 corresponding to the vacuum suction port 34, and the vacuum suction port 34 is disposed within the annular groove 341. The annular groove 341 structure effectively increases the negative pressure area, which can provide stronger and more stable adsorption force.

[0036] In this embodiment, a heat-conducting seat 36 protrudes from the upper surface of the heating stage 3, a vacuum suction port 34 is disposed on the heat-conducting seat 36, and a nitrogen outlet 35 is disposed near the heat-conducting seat 36 on the upper surface of the heating stage 3. A heat-conducting seat 36 protrudes from the heat-conducting plate 32. When the carrier plate carrying the substrate descends, the heat-conducting seat 36 can lift the substrate, separating it from the carrier plate, and transfer heat to the substrate through the heat-conducting seat 36; see further details. Figure 8 As shown, the carrier tray allows nitrogen gas to more thoroughly coat the bottom surface of the substrate and the wafer mounting surface. After the operation is completed, the carrier tray rises to remove the substrate from the heat-conducting base 36, realizing automated mounting of the substrate and the wafer.

[0037] In this embodiment, as Figure 7 As shown, in order to ensure the airtightness of the gas connection, especially in a vacuum environment, a first sealing structure 41 is provided at the connection between the first gas passage 21 and the first through hole 311, and a second sealing structure 42 is provided at the connection between the first through hole 311 and the third gas passage 321.

[0038] Specifically, the first sealing structure 41 and the second sealing structure 42 are the same, including an upper countersunk head 411 and a lower countersunk head 412 arranged opposite to each other. A guide ring 413 is provided in the lower countersunk head 412. The outer side of the guide ring 413 is set as an inclined surface, and the inclined surface is set towards the upper countersunk head 411. The inner wall cross section of the upper countersunk head 411 has a circular arc structure, and its central angle is greater than 90°.

[0039] During the vacuuming process, the airflow is guided by the inclined surface of the guide ring 413 and impacts the arc-shaped inner wall of the countersunk head 411, forming local turbulence at this connection point. This effectively prevents the infiltration of external air and forms a dynamic air seal effect. Compared with the traditional static sealing ring, this design is more resistant to high temperatures and has no wear and aging problems, making it suitable for long-term use in the high-temperature environment of this heating platform.

[0040] like Figure 2 As shown, the support frame 1 includes a support plate 11 and a heating base plate 12 disposed thereon, and a heat insulation plate 2 is disposed on the heating base plate 12.

[0041] Although this application has been described in conjunction with specific features and embodiments, it is obvious that various modifications and combinations can be made thereto without departing from the spirit and scope of this application. Accordingly, this specification and drawings are merely exemplary illustrations of the application as defined herein, and are to be considered as covering any and all modifications, variations, combinations, or equivalents within the scope of this application. Clearly, those skilled in the art can make various alterations and modifications to this application without departing from its scope. Thus, if such modifications and modifications fall within the scope of this application and its equivalents, this application intends to include such modifications and modifications.

Claims

1. A wafer and substrate mounting heating platform based on nitrogen protection, characterized in that, It includes a support frame and a heat insulation plate disposed thereon, a heating platform is disposed on the heat insulation plate, and a vacuum suction port and a nitrogen outlet are disposed on the upper surface of the heating platform; The heat insulation plate has a first air passage and a second air passage inside it. The vacuum suction port and the nitrogen outlet are respectively connected to the first air passage and the second air passage. The heat insulation plate has a first interface and a second interface respectively corresponding to the first air passage and the second air passage.

2. The wafer and substrate mounting heating platform based on nitrogen protection according to claim 1, characterized in that, The heating platform includes a heating plate and a heat-conducting plate disposed thereon. A heating device is disposed on the heating plate. The vacuum suction port and the nitrogen outlet are both disposed on the heat-conducting plate. A first through hole and a second through hole are respectively provided on the upper and lower sides of the heating plate. The first air passage is connected to the vacuum suction port through the first through hole, and the second air passage is connected to the nitrogen outlet through the second through hole.

3. The wafer and substrate mounting heating platform based on nitrogen protection according to claim 2, characterized in that, The heating device includes multiple thermocouples arranged in parallel, and the multiple thermocouples are evenly distributed.

4. The wafer and substrate mounting heating platform based on nitrogen protection according to claim 2, characterized in that, A third air passage and a fourth air passage are provided inside the heat-conducting plate, and the vacuum suction port and the nitrogen outlet are respectively connected to the third air passage and the fourth air passage; The first airway is connected to the third airway through the first through hole, and the second airway is connected to the fourth airway through the second through hole.

5. The wafer and substrate mounting heating platform based on nitrogen protection according to claim 4, characterized in that, The vacuum inlet and the nitrogen outlet are each provided with multiple locations along the first direction. The first air passage, the second air passage, the third air passage and the fourth air passage are each provided with multiple locations along the second direction, respectively corresponding to the vacuum inlet and the nitrogen outlet. The first direction is perpendicular to the second direction.

6. The wafer and substrate mounting heating platform based on nitrogen protection according to claim 5, characterized in that, Multiple vacuum suction ports and multiple nitrogen outlets are provided along the second direction. Multiple vacuum suction ports are connected to the first through hole through the same third air passage, and multiple nitrogen outlets are connected to the second through hole through the same fourth air passage.

7. The wafer and substrate mounting heating platform based on nitrogen protection according to claim 1, characterized in that, An annular groove is formed on the upper surface of the heating platform corresponding to the vacuum suction port, and the vacuum suction port is disposed in the annular groove.

8. The wafer and substrate mounting heating platform based on nitrogen protection according to claim 1, characterized in that, A heat-conducting seat is protruding from the upper surface of the heating platform, the vacuum suction port is disposed on the heat-conducting seat, and the nitrogen outlet is disposed near the heat-conducting seat on the upper surface of the heating platform.

9. The wafer and substrate mounting heating platform based on nitrogen protection according to claim 4, characterized in that, A first sealing structure is provided at the connection between the first air passage and the first through hole, and a second sealing structure is provided at the connection between the first through hole and the third air passage. The first sealing structure is the same as the second sealing structure, including an upper countersunk head and a lower countersunk head arranged opposite each other. A guide ring is provided inside the lower countersunk head. The outer side of the guide ring is set as an inclined surface, and the inclined surface is set towards the upper countersunk head. The inner wall cross-section of the upper countersunk head has a circular arc structure, and its central angle is greater than 90°.

10. The wafer and substrate mounting heating platform based on nitrogen protection according to claim 1, characterized in that, The support frame includes a support plate and a heating base plate disposed thereon, and the heat insulation plate is disposed on the heating base plate.

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