A laser device, processing method, and quantum device

Abstract

The application provides a laser device, a processing method and a quantum device, relates to the technical field of quantum computing, and the laser device comprises a laser source and a modulation module. The modulation module comprises a phase modulation unit, an arbitrary waveform generation unit, a filtering unit and an intensity modulation unit. The arbitrary waveform generation unit provides a first voltage signal and a second voltage signal, the phase modulation unit cooperates with the first voltage signal, and forms a second laser beam based on a first laser beam emitted by the laser source. The filtering unit screens out an mth-order sub-beam in the second laser beam, the intensity modulation unit cooperates with the second voltage signal, and forms a target beam based on the mth-order sub-beam, which is used for quantum state coherent transfer and / or construction of a fast entanglement gate. Wherein, based on the first voltage signal and the second voltage signal, the frequency of the target beam and the waveform and period of the target beam are adjustable respectively, and programmable tuning of the target beam is realized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of quantum computing, and in particular to a laser device, a processing method and a quantum device for quantum state coherent transfer and quantum entanglement gate construction. BACKGROUND

[0002] In the field of quantum computing, realizing quantum state coherent transfer and quantum entanglement is a key step to promote the practicality of quantum computing technology. The realization of quantum state coherent transfer and quantum entanglement has high requirements for the editability of various parameters of laser pulses, such as pulse frequency, waveform, period, intensity, etc. Therefore, how to provide laser pulses meeting the requirements has become a key problem for those skilled in the art. SUMMARY

[0003] Therefore, the present application provides a laser device, a processing method and a quantum device, and the scheme is as follows:

[0004] The present application provides a laser device for quantum state coherent transfer and fast entanglement gate construction, comprising a laser source and a modulation module, wherein the modulation module comprises a phase modulation unit, an arbitrary waveform generation unit, a filter unit and an intensity modulation unit.

[0005] The laser source emits a first laser beam.

[0006] The arbitrary waveform generation unit provides a first voltage signal and a second voltage signal, and the phase modulation unit is located on the transmission path of the first laser beam. The phase modulation unit cooperates with the first voltage signal to form a second laser beam based on the first laser beam. The second laser beam is a composite light beam comprising multiple sub-beams.

[0007] The filter unit is located on the transmission path of the second laser beam, and the mth sub-beam in the second laser beam is screened out, m≥1, and the frequency of the mth sub-beam is a first preset value based on the first voltage signal.

[0008] The intensity modulation unit is located on the transmission path of the mth sub-beam, and the intensity modulation unit cooperates with the second voltage signal to form a target light beam based on the mth sub-beam. The target light beam is a pulse light beam, and the waveform of the target light beam is a preset waveform and the pulse period is a second preset value based on the second voltage signal.

[0009] The target light beam is transmitted to a target region and acts on target ions in the target region to perform quantum state coherent transfer and / or construct a fast entanglement gate.

[0010] Optionally, the modulation module further comprises a power amplifier, the power amplifier comprises a first-stage power amplifier and a second-stage power amplifier, and the intensity modulation unit is located between the first-stage power amplifier and the second-stage power amplifier.

[0011] The first-stage power amplifier is located on a transmission path of the mth-order sub-beam, and the second-stage power amplifier is located on a transmission path of the target beam.

[0012] The intensity of the target beam is a third preset value based on the power amplifier.

[0013] The filtering unit comprises a grating filtering device or a Fabry-Perot cavity filtering device.

[0014] The grating filtering device comprises, in sequence along a transmission direction of the second laser beam, a beam expander, a first grating, a first mirror, a first lens, a mask, a second lens, a second grating, and a beam reducer; the second laser beam is transmitted to the mask in sequence through the beam expander, the first grating, the first mirror, and the first lens, the mask screens out the mth-order sub-beam in the second laser beam; and the mth-order sub-beam is output in sequence through the second lens, the second grating, and the beam reducer.

[0015] The Fabry-Perot cavity filtering device comprises, in sequence along a transmission direction of the second laser beam, an incident collimating mirror, a Fabry-Perot cavity, and an exit collimating mirror; the Fabry-Perot cavity is composed of oppositely arranged first and second cavity mirrors, a resonant cavity is formed between the first and second cavity mirrors, and the first and / or second cavity mirror is a partially reflective mirror.

[0016] The second laser beam is incident to the Fabry-Perot cavity after collimation by the incident collimating mirror, the mth-order sub-beam in the second laser beam is screened out, and the mth-order sub-beam is output after collimation by the exit collimating mirror.

[0017] Optionally, the laser device further comprises a wavelength conversion module, and the wavelength conversion module is located on a transmission path of the target beam.

[0018] The wavelength conversion module comprises a first beam splitter and a frequency doubling crystal; a part of the target beam of a fundamental frequency is reflected and output by the first beam splitter, and another part is transmitted to the frequency doubling crystal through the first beam splitter; the frequency doubling crystal outputs the target beam of a second frequency based on the target beam of the fundamental frequency transmitted thereto.

[0019] At least one of the target beam of the fundamental frequency and the target beam of the second frequency is the target beam, and the target beam of the fundamental frequency is the target beam without frequency doubling.

[0020] Optionally, the wavelength conversion module further comprises a second beam splitter and a frequency mixing crystal.

[0021] The target light beams at the fundamental frequency and the target light beams at the second harmonic frequency are transmitted through the second beam splitter, a part of which is reflected by the second beam splitter and output, and a part of which is transmitted through the second beam splitter and transmitted to the frequency mixing crystal, and the frequency mixing crystal outputs target light beams at the third harmonic frequency based on the target light beams at the fundamental frequency and the target light beams at the second harmonic frequency transmitted thereto.

[0022] At least one of the target light beams at the fundamental frequency, the target light beams at the second harmonic frequency and the target light beams at the third harmonic frequency is the target light beam.

[0023] Optionally, the laser device further comprises a reverse module, the reverse module comprising a polarizer and a third mirror, and the target light beam comprising a first target light beam and a second target light beam.

[0024] The modulation module alternately outputs the first target light beam and the second target light beam, and the first target light beam and the second target light beam are transmitted to the target region to jointly act on target ions in the target region to perform quantum state coherent transfer and / or construct a fast entanglement gate based on the first target light beam and the second target light beam.

[0025] The second target light beam is transmitted to the third mirror through the polarizer, reflected by the third mirror, and then transmitted to the target region through the polarizer to act on ions in the target region, and the third mirror is arranged on a displacement table, and the displacement table adjusts the position of the third mirror so that the second target light beam and the first target light beam simultaneously act on target ions in the target region.

[0026] The application further provides a processing method applied to the laser device for quantum state coherent transfer and fast entanglement gate construction.

[0027] The laser source emits a first laser beam.

[0028] The arbitrary waveform generation unit provides a first voltage signal and a second voltage signal.

[0029] The phase modulation unit is located on the transmission path of the first laser, and cooperates with the first voltage signal to form a second laser beam based on the first laser beam, and the second laser beam is a composite light beam comprising multiple sub-beams.

[0030] The filtering unit is located on the transmission path of the second laser beam, and screens out an mth-order sub-beam in the second laser beam; the mth-order sub-beam has a first preset frequency based on the first voltage signal;

[0031] The intensity modulation unit is located on the transmission path of the mth-order sub-beam, and cooperates with the second voltage signal to form a target beam based on the mth-order sub-beam; the target beam is a pulsed beam, and has a preset waveform and a second preset pulse period based on the second voltage signal;

[0032] Based on the target beam transmitted to the target region and acting on the target ions in the target region, quantum state coherent transfer and / or a fast entanglement gate are performed.

[0033] Optionally, based on the first voltage signal, the mth-order sub-beam has a first preset frequency, which includes:

[0034] Based on the frequency of the first voltage signal, the mth-order sub-beam has the first preset frequency;

[0035] Based on the second voltage signal, the target beam has a preset waveform and a second preset pulse period, which includes:

[0036] Based on the waveform of the second voltage signal, the target beam has the preset waveform;

[0037] Based on the period of the second voltage signal, the target beam has the second preset pulse period.

[0038] Optionally, the modulation module further includes a power amplifier, the power amplifier includes a first-stage power amplifier and a second-stage power amplifier, the intensity modulation unit is located between the first-stage power amplifier and the second-stage power amplifier, the first-stage power amplifier is located on the transmission path of the mth-order sub-beam, and the second-stage power amplifier is located on the transmission path of the target beam; the processing method further includes:

[0039] Based on the power amplifier, the target beam has a third preset intensity;

[0040] Based on the first-stage power amplifier, the mth-order sub-beam has a fourth preset intensity, and the intensity modulation unit forms the target beam based on the mth-order sub-beam with the fourth preset intensity;

[0041] Based on the second-stage power amplifier, the target beam has the third preset intensity.

[0042] The application also provides a quantum device comprising the laser device.

[0043] Compared with the related art, the technical scheme of the application has the following beneficial effects:

[0044] The laser device comprises a laser source and a modulation module, the modulation module comprises a phase modulation unit, an arbitrary waveform generation unit and a filter unit. The laser source emits a first laser beam, and the arbitrary waveform generation unit provides a first voltage signal and a second voltage signal. The phase modulation unit cooperates with the first voltage signal to form a second laser beam based on the first laser beam. The second laser beam is a composite light beam comprising multiple sub-beams, and specifically can be a superposition light beam of an infinite number of sub-beams. The filter unit screens out an mth sub-beam in the second laser beam, and the mth sub-beam can be any one of the infinite number of sub-beams in the second laser beam. Based on the first voltage signal, the frequency of the mth sub-beam is a first preset value. The intensity modulation unit cooperates with the second voltage signal to form a target light beam based on the mth sub-beam. Based on the second voltage signal, the waveform of the target light beam is a preset waveform, and the pulse period is a second preset value. The laser device can realize programmable modulation of the frequency, waveform and period of the target light beam based on the first voltage signal and the second voltage signal, that is, programmable modulation of the frequency, waveform and period of the light beam for performing quantum state coherent transfer and / or constructing a fast entanglement gate. Therefore, the laser device can accurately generate the required laser pulse by designing a suitable target light beam, and realizes high fidelity of quantum state coherent transfer and construction of a fast entanglement gate. In addition, the laser device can realize tuning of the frequency, period and waveform of the target light beam by the phase modulation unit and the intensity modulation unit cooperating with the alternating voltage signal provided by the arbitrary waveform generation unit, without the need for complex additional auxiliary optical paths, and is simple to operate and has stronger practicability. BRIEF DESCRIPTION OF DRAWINGS

[0045] In order to more clearly illustrate the technical solutions in the embodiments of the application or the related art, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, the drawings in the following description are only embodiments of the application, and for those skilled in the art, other drawings can be obtained without creative labor on the basis of the provided drawings.

[0046] The structures, proportions, sizes, etc. shown in the drawings of the specification are only used to cooperate with the content disclosed in the specification, to enable those skilled in the art to understand and read, and are not used to limit the conditions that can be implemented by the application, so they do not have technical significance. Any modification of structure, change of proportion relationship or adjustment of size, without affecting the effects and purposes that can be achieved by the application, should still fall within the scope of the technical content disclosed by the application.

[0047] Figure 1 A structural schematic diagram of a laser device provided in the present application is shown in FIG. 1.

[0048] Figure 2 A structural schematic diagram of a modulation module in a laser device provided in the present application is shown in FIG. 2.

[0049] Figure 3 A structural schematic diagram of a grating filtering device in a laser device provided in the present application is shown in FIG. 3.

[0050] Figure 4 A structural schematic diagram of a wavelength conversion module in a laser device provided in the present application is shown in FIG. 4.

[0051] Figure 5 A structural schematic diagram of a reverse module in a laser device provided in the present application is shown in FIG. 5.

[0052] Figure 6 A flow chart of a processing method provided in the present application is shown in FIG. 6. DETAILED DESCRIPTION

[0053] The embodiments in the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0054] In order to make the above objectives, features and advantages of the present application more obvious and easy to understand, the present application will be further described in detail with reference to the drawings and specific embodiments.

[0055] Ion trap system is one of the most potential platforms to realize quantum computing. It is of great significance to explore the methods of quantum state coherence transfer and quantum entanglement in ion trap system for the development of quantum computing.

[0056] Quantum state coherent transfer: In ion trap system, quantum bits are mostly encoded in the ground state hyperfine level of ions, and the coherent transformation between bits is generally realized by two-photon transition, that is, the transition of quantum state is realized by Raman process composed of two pulsed lights. By adjusting the parameters of the two pulsed lights, different protocols can be used to complete the process of quantum state coherent transfer. For example, ① stimulated Raman transition (SRT), which is simple to operate but sensitive to light intensity. ② Adiabatic Rapid Passage (ARP), which is complex to operate but not sensitive to light intensity and phase. ③ Stimulated Raman Adiabatic Rapid Passage (STIRAP), which is simple to operate and not sensitive to light intensity and phase, but sensitive to the time difference between the two pulses. ④ Dynamical Decoupling (DE), which is complex to operate but not sensitive to phase. As can be seen, different quantum state transfer protocols have different advantages and disadvantages, and different application scenarios may require different quantum state coherent transfer protocols. In order to execute different quantum state coherent transfer protocols, the pulsed light needs to be tuned in multiple ways. The parameters of the output pulsed light of the traditional pulsed laser are difficult to tune, so additional optical path configuration is needed to control it, which greatly increases the complexity of the optical path and reduces the operation fidelity.

[0057] Fast entangling gate construction: In ion trap system, there are mainly two ways to construct entangling gate, one is to apply spin dependent force to the ion by continuous laser, and the other is to apply spin dependent kick to the ion by pulsed light. Although both methods can realize the entanglement between multiple ion spin levels, the pulsed light scheme has faster operation speed and higher scalability, and is suitable for large-scale quantum computing.

[0058] The method of constructing entanglement gates by applying spin-dependent impulses to ions using pulsed light requires high precision in controlling the pulse timing. Currently, most laser pulses used to construct entanglement gates are generated by mode-locked lasers. However, mode-locked lasers produce pulses with fixed intervals, making it impossible to obtain the required pulse at any given time. This forces the selection of suitable pulses from a fixed pulse sequence to complete the entanglement gate construction, often resulting in low fidelity. Furthermore, traditional mode-locked pulsed lasers have low repetition rates, typically below 100 Hz, while pulsed light schemes require a large number of pulses to complete the entanglement operation within a short time (usually less than one microsecond). Therefore, mode-locked pulsed lasers cannot provide sufficient pulse resources for selection. These drawbacks make entanglement gate construction using mode-locked lasers as pulse sources extremely difficult and also lead to low fidelity in the final entanglement gate.

[0059] In summary, most current pulsed light cannot meet the requirements for coherent quantum state transfer and fast entanglement gate construction. Therefore, how to provide laser pulses that meet the requirements has become a key issue for those skilled in the art.

[0060] Based on the above, this application provides a laser device that can be used for coherent quantum state transfer and fast entanglement gate construction. For example... Figure 1 As shown, Figure 1 This application provides a schematic diagram of a laser device, which includes a laser source 100 and a modulation module 200. Figure 2 As shown, Figure 2 The diagram shows the structure of the modulation module 200, which includes a phase modulation unit 220, an arbitrary waveform generation unit 240, a filtering unit 260, and an intensity modulation unit 280. The laser source 100 is used to emit a first laser beam.

[0061] The arbitrary waveform generation unit 240 provides a first voltage signal and a second voltage signal, both of which are AC voltage signals. The phase modulation unit 220 is located on the transmission path of the first laser beam. The phase modulation unit 220 can work in conjunction with the first voltage signal to form a second laser beam based on the first laser beam. Specifically, the phase modulation unit 220 can form a second laser beam using the first laser beam based on its own parameters and the first voltage signal provided by the arbitrary waveform generation unit 240. The second laser beam is a composite beam of multiple sub-beams, specifically a composite beam formed by the superposition of infinitely many sub-beams. That is, after the first laser beam emitted by the laser source 100 is modulated by the phase modulation unit 220, it is in a superposition state of infinitely many sub-beams.

[0062] The filtering unit 260 is located on the transmission path of the second laser beam, and is used to screen out the mth-order sub-beam in the second laser beam, where m is greater than or equal to 1, and the mth-order sub-beam can be any one of the infinite-order sub-beams in the second laser beam. That is, the filtering unit 260 can screen out any sub-beam in the second laser beam according to requirements to form a target light beam. Based on the first voltage signal, the frequency of the mth-order sub-beam is a first preset value, that is, based on the first voltage signal provided by the arbitrary waveform generating unit 240 to the phase modulation unit 220, the frequency of the mth-order sub-beam is the first preset value. It should be noted that the above-mentioned frequency of the mth-order sub-beam based on the first voltage signal is the first preset value, and the mth-order sub-beam can be any sub-beam in the second laser beam, so the frequencies of the sub-beams in the second laser beam can be determined based on the first voltage signal, that is, can be controlled based on the first voltage signal. However, it should be noted that the frequencies of the sub-beams in the second laser beam are usually different.

[0063] The intensity modulation unit 280 is located on the transmission path of the mth-order sub-beam, that is, the intensity modulation unit 280 is located on the transmission path of the screened sub-beam. The intensity modulation unit 280 cooperates with the second voltage signal to form a target light beam based on the mth-order sub-beam, that is, the intensity modulation unit 280 can form a target light beam based on the mth-order sub-beam based on its own parameters and the second voltage signal provided by the arbitrary waveform generating unit 240. The above-mentioned target light beam is a pulsed light beam, and based on the second voltage signal, the waveform of the target light beam is a preset waveform, and the pulse period is a second preset value. That is, the intensity modulation unit 280 can form a target pulsed light beam based on the mth-order sub-beam based on its own parameters and the second voltage signal, and during the formation of the target light beam, the waveform and period of the target pulsed light beam can be controlled according to the second voltage signal.

[0064] When performing quantum state coherent transfer and / or constructing a fast entanglement gate, the above-mentioned target light beam is transmitted to a target region, for example, an ion target region, and acts on a target ion in the target region, thereby performing quantum state coherent transfer and / or constructing a fast entanglement gate.

[0065] It should be noted that the expression of the electric field E of the second laser beam formed after the phase modulation unit 220 modulation is as follows:

[0066] ;

[0067] wherein, is the amplitude of the electric field of the first laser beam, is an integer from negative infinity to positive infinity, represents the mth-order Bessel function, an amplitude of the alternating current signal outputted by the arbitrary waveform generating unit 240 to the phase modulation unit 220 (i.e. an amplitude of the first voltage signal), a half-wave voltage of the phase modulation unit 220, a wave vector of the second laser beam, denotes an optical path, a frequency of the first laser beam, a frequency of the alternating current signal outputted by the arbitrary waveform generating unit 240 (i.e. a frequency of the first voltage signal), denotes time, denotes a conjugate part.

[0068] Based on the above formula, the electric field of the mthsub-beam is The expression is , so the frequency of the mthsub-beam is . It is known that the frequency of the first voltage signal provided by the arbitrary waveform generating unit 240 to the phase modulation unit 220, so based on the frequency of the first voltage signal, the frequency of the mthsub-beam is a first preset value , that is, the frequency of the mthsub-beam can be regulated based on the first voltage signal.

[0069] After the mthsub-beam is formed into a target beam by the intensity modulation unit 280, the electric field expression of the target beam is as follows:

[0070] ;

[0071] wherein, a voltage magnitude of the alternating current signal outputted by the arbitrary waveform generating unit 240 to the intensity modulation unit 280 (i.e. a second voltage signal), a half-wave voltage of the intensity modulation unit 280. The intensity modulation unit 280 can modulate the waveform and frequency of the target beam based on its own parameters and in cooperation with the second voltage signal. Specifically, the amplitude of the first voltage signal outputted by the arbitrary waveform generating unit 240 is fixed , that is, the amplitude of the first voltage signal outputted by the arbitrary waveform generating unit 240 is kept unchanged , the amplitude of the second voltage signal outputted by the arbitrary waveform generating unit 240 to the intensity modulation unit 280 is changed The target beam exhibits periodic changes; that is, a periodic second voltage signal can be applied to the intensity modulation unit 280 by the arbitrary waveform generation unit 240, so that the waveform and period of the target beam can be obtained based on the waveform and period of the second voltage signal. Therefore, the waveform and period of the target beam can be precisely modulated based on the second voltage signal. It should be noted that the frequency of the known m-th order sub-beam can be precisely modulated based on the first voltage signal, and according to the electric field expression of the target beam, the frequency of the target beam is not changed during the process of the intensity modulation unit 280 cooperating with the second voltage signal to form the target beam; that is, the frequency of the target beam remains at the first preset value. In other words, the frequency, waveform, and period of the target beam can be precisely modulated based on the first and second voltage signals, thereby realizing programmable modulation of the frequency, waveform, and period of the target beam.

[0072] As described above, this laser device can achieve programmable modulation of the frequency, waveform, and period of the target beam based on the first and second voltage signals. This means it enables programmable modulation of the beam frequency, waveform, and period used for quantum state coherent transfer and / or constructing a fast entanglement gate. Therefore, by designing a suitable target beam, this laser device can precisely generate the required laser pulses, achieving high fidelity in quantum state coherent transfer and constructing a fast entanglement gate. It can be used to execute different quantum state coherent transfer protocols and applied in various physical scenarios. Furthermore, the programmable modulation of the target beam's frequency, waveform, and period allows the quantum state to undergo target evolution, ultimately achieving a high-fidelity and robust fast entanglement gate.

[0073] Meanwhile, as can be seen from the above, the laser device can achieve tuning of the frequency, period and waveform of the target beam by using the AC voltage signal provided by the phase modulation unit 220 and intensity modulation unit 280 in conjunction with the arbitrary waveform generation unit 240. It does not require a complex additional auxiliary optical path, making it simple to operate and more practical.

[0074] In one embodiment of this application, such as Figure 2As shown, the modulation module 200 further includes a power amplifier, which includes a first-stage power amplifier 320 and a second-stage power amplifier 340, and the intensity modulation unit 280 is located between the first-stage power amplifier 320 and the second-stage power amplifier 340. The mth-order sub-beam is transmitted to the intensity modulation unit 280 after power amplification by the first-stage power amplifier 320, and the intensity modulation unit 280 forms a target beam based on the mth-order sub-beam amplified by the first-stage power amplifier 320. The target beam is transmitted to the second-stage power amplifier 340, and after amplification by the second-stage power amplifier 340, the intensity of the target beam is a third preset value, so as to increase the intensity of the target beam, so that the intensity of the target beam meets the requirements.

[0075] In an embodiment of the present application, the filtering unit 260 includes a grating filtering device or a Fabry-Perot cavity filtering device.

[0076] If the filtering unit 260 includes a grating filtering device, as shown, Figure 3 Figure 3 A structure diagram of a grating filtering device provided by the present application is shown, which includes, in sequence along the transmission direction of the second laser beam, a beam expander 261, a first grating 262, a first mirror 263, a first lens 264, a mask 265, a second lens 266, a second mirror 267, a second grating 268, and a beam reducer 269. The second laser beam is transmitted to the mask 265 in sequence through the beam expander 261, the first grating 262, the first mirror 263, and the first lens 264, the mask 265 screens out the mth-order sub-beam in the second laser beam, and the mth-order sub-beam is output in sequence through the second lens 266, the second mirror 267, the second grating 268, and the beam reducer 269.

[0077] Specifically, the second laser beam enters the beam expander 261, the spot size is enlarged, and then is incident on the first grating 262 to diffract, and sub-beams of different frequencies have different diffraction angles. The diffracted second laser beam is reflected by the first mirror 263 and focused by the first lens 264 to be incident on the mask 265, the mask 265 only allows a specific order of sub-beam to pass through, and other orders of sub-beams will be filtered out, for example, the mask 265 allows the mth-order sub-beam to pass through. The mth-order sub-beam obtained after filtering is sequentially transmitted through the second lens 266, the second mirror 267, the second grating 268, and the beam reducer 269, and the spot size thereof is reduced by the beam reducer 269 to become the original spot size as much as possible, and is incident into the first-stage power amplifier 320.

[0078] ​If the filtering unit 260 comprises a Fabry-Perot cavity filtering device, the Fabry-Perot cavity filtering device comprises, in sequence along the transmission direction of the second laser beam, an incident collimating mirror, a Fabry-Perot cavity, and an exit collimating mirror. The Fabry-Perot cavity is composed of a first cavity mirror and a second cavity mirror arranged oppositely, a resonant cavity is formed between the first cavity mirror and the second cavity mirror, and the first cavity mirror and / or the second cavity mirror is a partial mirror. The second laser beam is collimated by the incident collimating mirror and then incident to the Fabry-Perot cavity, and the mth-order sub-beam in the second laser beam is screened out. The mth-order sub-beam is collimated by the exit collimating mirror and then output. It should be noted that the first cavity mirror and / or the second cavity mirror is a partial mirror, which is used for multi-beam interference frequency selection of the second laser beam. Specifically, the second laser beam is transmitted to the Fabry-Perot cavity through the incident collimating mirror, at this time, only the sub-beam in the second laser beam that satisfies the cavity length resonance condition of the Fabry-Perot cavity can transmit through the Fabry-Perot cavity, and the remaining sub-beams are reflected or suppressed to realize filtering, and the mth-order sub-beam in the second laser beam is screened out.

[0079] In an embodiment of the present application, as shown in Figure 1 , the laser device further comprises a wavelength conversion module 400, which is located on the transmission path of the target light beam, specifically along the light beam transmission direction in the laser device, behind the modulation module 200. As shown in Figure 4 , the wavelength conversion module 400 is located on the transmission path of the target light beam, specifically along the light beam transmission direction in the laser device, behind the modulation module 200. Figure 4 is a structural schematic diagram of the wavelength conversion module, the wavelength conversion module 400 comprises a first beam splitter 420 and a frequency doubling crystal 440, the fundamental frequency target light beam is transmitted to the first beam splitter 420, a part is reflected and output by the first beam splitter 420, and a part is transmitted to the frequency doubling crystal 440 through the first beam splitter 420, the frequency doubling crystal 440 outputs a second-harmonic target light beam based on the fundamental frequency target light beam transmitted thereto. At least one of the fundamental frequency target light beam and the second-harmonic target light beam is used as the final target light beam for coherent transfer of quantum states and fast entanglement gate construction. It should be noted that, with respect to the second-harmonic target light beam, the above-mentioned fundamental frequency target light beam is the initial target light beam without frequency doubling.

[0080] In an embodiment of the present application, as shown in Figure 4As shown, the wavelength conversion module 400 may further include a second beam splitter 460 and a frequency combiner crystal 480. A second-harmonic target beam is transmitted to the second beam splitter 460, with a portion reflected and output by the second beam splitter 460, and a portion transmitted through the second beam splitter 460 to the frequency combiner crystal 480. The fundamental frequency target beam can also be transmitted through the second beam splitter 460 to the frequency combiner crystal 480. The frequency combiner crystal 480 outputs a third-harmonic target beam based on the fundamental frequency target beam and the second-harmonic target beam transmitted thereon. At least one of the target beam, the second-harmonic target beam, and the third-harmonic target beam serves as the target beam for coherent quantum state transfer and fast entanglement gate construction.

[0081] As described above, the wavelength conversion module 400 can have one, two, or three output windows. If the wavelength conversion module 400 outputs a target beam of fundamental frequency and a target beam of second harmonic frequency, the reflecting end of the first beam splitter 420 and the output end of the frequency doubling crystal are each two output windows. If the wavelength conversion module 400 outputs target beams of fundamental frequency, second harmonic frequency, and third harmonic frequency, then the reflecting end of the first beam splitter 420, the reflecting end of the second beam splitter 460, and the output end of the frequency combining crystal are each three output windows. Specifically, the expression for the electric field of the second harmonic target beam is: The expression for the electric field of the third harmonic target beam is: Therefore, the frequencies of the aforementioned target beams are specifically controlled by adjusting the order of the m-th order sub-beam and / or by adjusting the frequency of the first voltage signal output by the arbitrary waveform generation unit 240. This allows for arbitrary adjustment. Furthermore, the light intensity of each of the aforementioned target beams is proportional to... Therefore, the amplitude of the first voltage signal can be fixed. That is, keeping the amplitude of the first voltage signal output from the arbitrary waveform generation unit 240 to the phase modulation unit 220 unchanged, and making the amplitude of the second voltage signal output from the arbitrary waveform generation unit 240 to the intensity modulation unit 280 unchanged. The periodic variation allows the arbitrary waveform generation unit 240 to apply a periodic AC signal to the intensity modulation unit 280, causing the intensity of each target beam to vary periodically. Based on the above, it can be seen that this laser device can accurately construct pulse beams with the required frequency, waveform, and period, thus accurately constructing target beams that meet the requirements.

[0082] Based on the above, the laser device can output three different wavelength target beams, and the frequency of each target beam can be arbitrarily adjusted by adjusting the order of the sub-beam allowed to pass through the mask 265 or the frequency of the alternating current signal output by the arbitrary waveform generation unit 240 to the phase modulation unit 220, the waveform and period of each target beam can be arbitrarily adjusted by adjusting the amplitude of the alternating current signal output by the arbitrary waveform generation unit 240 to the phase modulation unit 220 and the intensity modulation unit 280, and the intensity of each target beam can be adjusted by the power amplifier. This means that the frequency, waveform, single pulse width and pulse interval of each target beam described above can be arbitrarily adjusted, so that the laser device can realize programmable control of the required pulsed light beam, and then realize programmable adjustment of the target beam.

[0083] For some application scenarios that require two-sided light, i.e., two pulsed light beams simultaneously acting on target ions in a target region, in an embodiment of the present application, as shown in Figure 5 , Figure 5 is a structural schematic diagram of a reverse module 500, and the laser device further includes the reverse module 500, which includes a polarizer 520 and a third mirror 540. The modulation module 200 alternately outputs a first target beam and a second target beam, and the first target beam and the second target beam are transmitted to the target region and simultaneously act on target ions in the target region. Specifically, the two pulsed light beams simultaneously act on the target ions in the target region in opposite directions, and quantum state coherent transfer and / or fast entanglement gate construction are performed based on the first target beam and the second target beam.

[0084] Among them, the second target beam is transmitted to the third mirror 540 through the polarizer 520, reflected by the third mirror 540, and then transmitted to the target region through the polarizer 520 and acts on the ions in the target region. The third mirror 540 is arranged on a displacement table 560, and the displacement table 560 adjusts the position of the third mirror 540, so that the second target beam and the first target beam simultaneously act on the target ions in the target region, and then the two pulsed light beams simultaneously act on the target ions in the target region. It should be noted that the parameters of the two pulsed light beams are different, such as frequency, intensity, pulse period, etc.

[0085] Correspondingly, the present application also provides a processing method, which is applied to the laser device described in any of the above embodiments. The laser device includes a laser source 100 and a modulation module 200, and the modulation module 200 includes a phase modulation unit 220, an arbitrary waveform generation unit 240 and a filter unit 260. The processing method can perform quantum state coherent transfer and fast entanglement gate construction based on the laser device described in any of the above embodiments. As shown in Figure 6 , Figure 6 is a flowchart of a processing method provided by the present application. The processing method includes:

[0086] S1: the laser source 100 emits a first laser beam.

[0087] S2: the arbitrary waveform generating unit 240 provides a first voltage signal and a second voltage signal.

[0088] S3: the phase modulation unit 220 is located on the transmission path of the first laser beam, and the phase modulation unit 220 can form a second laser beam based on the first laser beam in cooperation with the first voltage signal, that is, the phase modulation unit 220 can form the second laser beam based on its own parameters and the first voltage signal provided by the arbitrary waveform generating unit 240. The second laser beam is a composite beam of multiple sub-beams, specifically a composite beam composed of an infinite number of sub-beams, that is, the first laser beam emitted by the laser source 100 is in the superposition state of an infinite number of sub-beams after being modulated by the phase modulation unit 220.

[0089] S4: the filtering unit 260 is located on the transmission path of the second laser beam, and is used to screen out the mth sub-beam in the second laser beam, m≥1, that is, the mth sub-beam can be any one of the infinite number of sub-beams in the second laser beam. The frequency of the mth sub-beam is a first preset value based on the first voltage signal, that is, based on the first voltage signal provided by the arbitrary waveform generating unit 240 to the phase modulation unit 220. It should be noted that the frequency of the mth sub-beam is the first preset value based on the first voltage signal, and the mth sub-beam is any sub-beam in the second laser beam, so the frequency of each sub-beam in the second laser beam can be determined based on the first voltage signal, that is, can be controlled based on the first voltage signal. However, it should be noted that the frequencies of the sub-beams in the second laser beam are usually different due to different orders.

[0090] S5: the intensity modulation unit 280 is located on the transmission path of the mth sub-beam, that is, the intensity modulation unit 280 is located on the transmission path of the mth sub-beam screened out. The intensity modulation unit 280 cooperates with the second voltage signal to form a target beam based on the mth sub-beam, that is, the intensity modulation unit 280 can form a target beam based on the mth sub-beam based on its own parameters and the second voltage signal provided by the arbitrary waveform generating unit 240. The above-mentioned target beam is a pulse beam, and the waveform of the target beam is a preset waveform and the pulse period is a second preset value based on the second voltage signal. That is, the intensity modulation unit 280 can form a target pulse beam based on the mth sub-beam based on its own parameters and the second voltage signal, and the waveform and period of the target pulse beam can be controlled based on the second voltage signal.

[0091] S6: performing quantum state coherent transfer and / or constructing a fast entanglement gate based on the target light beam transmitted to the target region and acting on the target ions in the target region. It should be noted that the target region may, for example, be an ion target region.

[0092] As can be seen from the above, the processing method can realize programmable modulation of the frequency, waveform and period of the target light beam based on the first voltage signal and the second voltage signal, that is, programmable modulation of the frequency, waveform and period of the light beam for performing quantum state coherent transfer and / or constructing a fast entanglement gate. Therefore, the laser device can accurately generate the required laser pulse by designing a suitable target light beam, realize high fidelity of quantum state coherent transfer and construction of a fast entanglement gate, and can be used to perform different quantum state coherent transfer protocols and applied to different physical scenarios. In addition, the processing method realizes programmable modulation of the frequency, waveform and period of the required target light beam, that is, the quantum state can be evolved to the target, and finally a fast entanglement gate with high fidelity and robustness is realized.

[0093] In an embodiment of the present application, the frequency of the mth-order sub-beam is the first preset value based on the frequency of the first voltage signal. The waveform of the target light beam is a preset waveform based on the waveform of the second voltage signal, and the pulse period of the target light beam is the second preset value based on the period of the second voltage signal. It should be noted that the relationship between the first voltage signal and the frequency of the mth-order sub-beam, and the relationship between the second voltage signal and the waveform and period of the target light beam have been described in detail in the foregoing laser device, and will not be repeated here.

[0094] In an embodiment of the present application, the processing method further comprises: based on the power amplifier, the intensity of the target light beam is a third preset value. Specifically, based on a first-level power amplifier, the intensity of the mth-order sub-beam is amplified to a fourth preset value, and the intensity modulation unit forms the target light beam based on the mth-order sub-beam with the intensity of the fourth preset value; based on a second-level power amplifier, the intensity of the target light beam is amplified to a third preset value, so that the intensity of the target light beam meets the requirements.

[0095] The present application also provides a quantum device comprising the laser device of any one of the above embodiments. It should be noted that the laser device has been described in detail in the foregoing, and will not be repeated here.

[0096] In order to more clearly introduce the laser device described in the present application, the working process of the laser device will be described in detail below through specific embodiments.

[0097] Embodiment One

[0098] Applied to Implement quantum state coherent transfer based on ARP protocol in ion system. Specifically, adopt in ion energy level as quantum bit , as quantum bit . The corresponding configuration of the laser device can be as follows: using an optical path containing an intensity modulation unit 280, the laser source 100 outputs a first laser beam with a wavelength of 1108 nm, and the filter unit 260 is adjusted to allow the -3 order sub-beam to pass. The phase modulation unit 220 alternately outputs two kinds of configured lasers, and the configurations of the two kinds of lasers can be as follows: the intensities of the two are the same, and the frequencies satisfy , where is the energy level difference between the two hyperfine energy levels, need to be optimized according to experimental conditions. The intensity modulation unit 280 outputs the two kinds of configured lasers as pulsed light, specifically, an arbitrary waveform generating unit 240 is used to apply an alternating current signal with a period of to the intensity modulation unit 280. The wavelength conversion module 400 outputs third harmonic light, that is, the laser wavelength of the target beam is converted to 369 nm. The target beam enters the ion manipulation area and is incident on the target ion. The target beam is linearly polarized light, and its incident direction is the same as the direction of the static magnetic field. The polarizer 520 in the reverse module 500 is a 1 / 4 wave plate, so that the polarization direction of the second target beam is rotated by 90 degrees after being reversed, and the third mirror 540 is adjusted to the distance so that when the first target beam with a frequency of reaches the target ion, the second target beam with a frequency of also reaches the target ion. By selecting appropriate pulse intensity and , the quantum state can be flipped in an adiabatic path within time, that is, the quantum state coherent transfer under ARP protocol is successfully performed.

[0099] Embodiment Two

[0100] Applied to Implement quantum state coherent transfer based on STIRARP protocol in ion system. Adopt in ion energy level as quantum bit , as quantum bit The corresponding configuration of the laser device can be as follows: An optical path containing an intensity modulation unit 280 is used; the laser source 100 outputs a laser wavelength of 1108 nm; and the filter unit 260 is adjusted to allow -3rd order light to pass through. The phase modulation unit 220 alternately outputs two laser configurations, specifically, the two lasers have the same waveform and pulse frequencies of [missing information]. , . , It is a constant value and must satisfy the following conditions: ,in , which is the energy level difference between two hyperfine energy levels. The intensity modulation unit 280 outputs laser light in both configurations as pulsed light; specifically, the arbitrary waveform generation unit 240 applies a period of to the intensity modulation unit 280. The wavelength conversion module 400 outputs third-harmonic light, meaning the laser wavelength of the target beam is converted to 369nm. The target beam enters the ion manipulation region and is incident on the target ions. The target beam is linearly polarized, and its incident direction is the same as the direction of the static magnetic field. In the reversing module 500, the polarizer 520 is a quarter-wave plate, so the polarization direction of the second target beam rotates 90 degrees after reversal. The distance of the third reflecting mirror 540 is adjusted so that when the frequency is... When the first target beam reaches the target ion, the frequency is The second target beam also happened to follow The time is reached by the target ion. This is achieved by selecting an appropriate pulse intensity and delay time. This allows quantum states to be in The quantum state flips within a time frame via an adiabatic path, thus successfully executing the coherent quantum state transfer under the STIRARP protocol.

[0101] It should be noted that the laser device can also realize coherent quantum state transfer based on other transfer protocols, such as the AE transfer protocol described in the background section. This application only uses the above embodiments as examples for illustration.

[0102] Example 3

[0103] Applied to A fast entanglement gate based on spin-dependent impulse is constructed in an ion system. The laser device can be configured as described in Example 1, except that the target beam acts on two target ions in the target region. Since the ions acquire an impulse related to their initial spin state during an adiabatic Raman transition, their spin can be coupled to their motion state. By having the modulation module 200 output the two target beam configurations in a specific timing sequence, the motion state of the ions can evolve along a closed path in phase space, ultimately coupling their spin states to construct an entanglement gate between the two ions. The timing sequence of the target beams needs to be optimized based on specific experimental conditions.

[0104] In summary, the application provides a laser device, a processing method and a quantum device. The laser device comprises a laser source and a modulation module. The modulation module comprises a phase modulation unit, an arbitrary waveform generation unit and a filter unit. The laser source emits a first laser beam. The arbitrary waveform generation unit provides a first voltage signal and a second voltage signal. The phase modulation unit cooperates with the first voltage signal to form a second laser beam based on the first laser beam. The second laser beam is a composite beam comprising multiple sub-beams, and specifically can be a superposition beam of an infinite number of sub-beams. The filter unit filters out an mth sub-beam in the second laser beam, which can be any one of the infinite number of sub-beams in the second laser beam. The frequency of the mth sub-beam is a first preset value based on the first voltage signal. The intensity modulation unit cooperates with the second voltage signal to form a target beam based on the mth sub-beam. The waveform of the target beam is a preset waveform and the pulse period is a second preset value based on the second voltage signal. The laser device can achieve programmable modulation of the frequency, waveform and period of the target beam based on the first voltage signal and the second voltage signal, i.e., programmable modulation of the frequency, waveform and period of the beam for quantum state coherent transfer and / or construction of a fast entanglement gate. Therefore, the laser device can accurately generate the required laser pulse by designing a suitable target beam, achieving high fidelity of quantum state coherent transfer and construction of a fast entanglement gate. In addition, the laser device can achieve tuning of the frequency, period and waveform of the target beam by the phase modulation unit and the intensity modulation unit cooperating with the alternating voltage signal provided by the arbitrary waveform generation unit, without the need for complex additional auxiliary optical paths, simple operation and strong practicability.

[0105] In the description of the present application, the various embodiments are described in a progressive, or parallel, or a combination of progressive and parallel manner, and each embodiment focuses on the difference from other embodiments. The same or similar parts of each embodiment can be referred to each other. For the device disclosed in the embodiments, since it corresponds to the method disclosed in the embodiments, the description is relatively simple, and the relevant parts are referred to the method part.

[0106] It should be noted that in the description of the present application, it should be understood that the terms "upper", "lower", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. When a component is considered to be "connected" to another component, it can be directly connected to the other component or there can be a component disposed therebetween.

[0107] It is also noted that the relational terms herein, such as first and second, and the like, are used solely to distinguish one from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises", "comprising", or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a vesicle or apparatus that comprises a list of elements does not include only those elements but can also include other elements not expressly listed or inherent to such vesicle or apparatus. An element proceeded by "comprises a... " does not, without more constraints, preclude the existence of additional identical elements in the vesicle or apparatus that comprises the recited element.

[0108] The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A laser device, characterized in that, For quantum state coherent transfer and fast entanglement gate construction, it includes: a laser source and a modulation module, wherein the modulation module includes a phase modulation unit, an arbitrary waveform generation unit, a filtering unit and an intensity modulation unit; The laser source emits a first laser beam; The arbitrary waveform generating unit provides a first voltage signal and a second voltage signal. The phase modulation unit is located on the transmission path of the first laser beam. The phase modulation unit works in conjunction with the first voltage signal to form a second laser beam based on the first laser beam. The second laser beam is a composite beam including multiple sub-beams. The filtering unit is located on the transmission path of the second laser beam, and filters out the m-th order sub-beam in the second laser beam, where m≥1, and the frequency of the m-th order sub-beam is a first preset value based on the first voltage signal; The intensity modulation unit is located on the transmission path of the m-th order sub-beam. The intensity modulation unit, in conjunction with the second voltage signal, forms a target beam based on the m-th order sub-beam. The target beam is a pulse beam, and based on the second voltage signal, the waveform of the target beam is a preset waveform, and the pulse period is a second preset value. The target beam is transmitted to the target region and acts on the target ions in the target region to perform quantum state coherent transfer and / or construct a fast entanglement gate.

2. The laser device according to claim 1, characterized in that, The modulation module further includes a power amplifier, which includes a first-stage power amplifier and a second-stage power amplifier, and the intensity modulation unit is located between the first-stage power amplifier and the second-stage power amplifier; The first-stage power amplifier is located on the transmission path of the m-th sub-beam, and the second-stage power amplifier is located on the transmission path of the target beam. The intensity of the target beam is a third preset value, based on the power amplifier.

3. The laser device according to claim 1, characterized in that, The filtering unit includes a grating filter or a Fabry-Perot cavity filter; The grating filtering device includes a beam expander, a first grating, a first reflector, a first lens, a mask, a second lens, a second grating, and a beam reducer arranged sequentially along the transmission direction of the second laser beam; the second laser beam is transmitted sequentially through the beam expander, the first grating, the first reflector, and the first lens to the mask, and the mask filters out the m-th order sub-beam in the second laser beam; The m-th order sub-beam is output sequentially through the second lens, the second grating, and the beam shrinking mirror; The Fabry-Perot cavity filtering device includes an incident collimator, a Fabry-Perot cavity, and an exit collimator arranged sequentially along the transmission direction of the second laser beam; wherein, the Fabry-Perot cavity is composed of a first cavity mirror and a second cavity mirror arranged opposite to each other, a resonant cavity is formed between the first cavity mirror and the second cavity mirror, and the first cavity mirror and / or the second cavity mirror is a partial reflector; The second laser beam is collimated by the incident collimating lens and then incident into the Fabry-Perot cavity. The m-th order sub-beam in the second laser beam is selected and then collimated by the exit collimating lens before being output.

4. The laser device according to claim 1, characterized in that, The laser device also includes a wavelength conversion module, which is located on the transmission path of the target beam; The wavelength conversion module includes a first beam splitter and a frequency doubling crystal. The target beam with the fundamental frequency passes through the first beam splitter, part of which is reflected and output by the first beam splitter, and part of which is transmitted through the first beam splitter to the frequency doubling crystal. The frequency doubling crystal outputs the target beam with the second harmonic frequency based on the target beam with the fundamental frequency transmitted thereto. The target beam is at least one of the fundamental frequency target beam and the second harmonic target beam, wherein the fundamental frequency target beam is the unharmonicized target beam.

5. The laser device according to claim 4, characterized in that, The wavelength conversion module also includes a second beam splitter and a frequency combining crystal; The target beam of the fundamental frequency and the target beam of the second harmonic are passed through the second beam splitter. Part of the beam is reflected and output by the second beam splitter, and part of the beam is transmitted through the second beam splitter to the frequency combining crystal. The frequency combining crystal outputs the target beam of the third harmonic based on the target beam of the fundamental frequency and the target beam of the second harmonic transmitted thereto. The target beam is at least one of the fundamental frequency target beam, the second harmonic target beam, and the third harmonic target beam.

6. The laser device according to claim 1, characterized in that, The laser device also includes a reversing module, which includes a polarizer and a third mirror, and the target beam includes a first target beam and a second target beam. The modulation module alternately outputs the first target beam and the second target beam. The first target beam and the second target beam are transmitted to the target region and act together on the target ions in the target region. Based on the first target beam and the second target beam, quantum state coherent transfer and / or fast entanglement gate are performed. The second target beam is transmitted to the third reflector via the polarizer, reflected by the third reflector, and then transmitted to the target region via the polarizer to act on the ions in the target region. The third reflector is disposed on a displacement stage, and the displacement stage adjusts the position of the third reflector so that the second target beam and the first target beam act on the target ions in the target region simultaneously.

7. A processing method, characterized in that, This processing method is applied to the laser device for quantum state coherent transfer and fast entanglement gate construction as described in any one of claims 1-6; the processing method includes: The laser source emits a first laser beam; The arbitrary waveform generation unit provides a first voltage signal and a second voltage signal; The phase modulation unit is located on the transmission path of the first laser beam. The phase modulation unit works in conjunction with the first voltage signal to form a second laser beam based on the first laser beam. The second laser beam is a composite beam including multiple sub-beams. The filtering unit is located on the transmission path of the second laser beam, and filters out the m-th order sub-beam in the second laser beam. Based on the first voltage signal, the frequency of the m-th order sub-beam is a first preset value. The intensity modulation unit is located on the transmission path of the m-th order sub-beam. The intensity modulation unit, in conjunction with the two voltage signals, forms a target beam based on the m-th order sub-beam. The target beam is a pulse beam. Based on the second voltage signal, the waveform of the target beam is a preset waveform, and the pulse period is a second preset value. Based on the target beam transmitted to the target region and acting on the target ions in the target region, quantum state coherent transfer and / or construction of fast entanglement gates are performed.

8. The processing method according to claim 7, characterized in that, Based on the first voltage signal, the frequency of the m-th order sub-beam is a first preset value, including: Based on the frequency of the first voltage signal, the frequency of the m-th order sub-beam is the first preset value; Based on the second voltage signal, the waveform of the target beam is a preset waveform, and the pulse period is a second preset value, including: Based on the waveform of the second voltage signal, the waveform of the target beam is the preset waveform; Based on the period of the second voltage signal, the pulse period of the target beam is the second preset value.

9. The processing method according to claim 7, characterized in that, The modulation module further includes a power amplifier, which comprises a first-stage power amplifier and a second-stage power amplifier. The intensity modulation unit is located between the first-stage power amplifier and the second-stage power amplifier. The first-stage power amplifier is located on the transmission path of the m-th order sub-beam, and the second-stage power amplifier is located on the transmission path of the target beam. The processing method further includes: Based on the power amplifier, the intensity of the target beam is a third preset value; Wherein, based on the first-stage power amplifier, the intensity of the m-th order sub-beam is a fourth preset value, and the intensity modulation unit forms the target beam based on the m-th order sub-beam with the intensity of the fourth preset value; Based on the second-stage power amplifier, the intensity of the target beam is the third preset value.

10. A quantum device, characterized in that, Includes the laser device according to any one of claims 1-6.

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