Ferroelectric-phase Mn2NO2-based multiferroic track memory device and preparation and use methods of ferroelectric-phase Mn2NO2-based multiferroic track memory device

Abstract

The invention discloses a multiferroic track memory device based on ferroelectric phase Mn2NO2, the multiferroic track memory device comprises a substrate, a ferroelectric phase Mn2NO2 nanosheet, a write electrode, a read electrode and a signal interpreter, the invention also discloses a method for preparing the memory device, the single-layer ferroelectric phase Mn2NO2 nanosheet is transferred to the substrate, in-plane region division is carried out, and the ferroelectric phase Mn2NO2 nanosheet is obtained; the invention further discloses a use method of the memory device, information is written in through the write-in electrode, and the information is read through the read electrode. The memory device is simple in structure, the core material is only the ferroelectric phase Mn2NO2 nanosheet, and the problems that a small-size multiferroic material cannot be further obtained due to the size effect of an existing multiferroic material, coexistence of ferroelectricity and ferromagnetism of a two-dimensional material is difficult to achieve, and an intrinsic small-size multiferroic electronic device is difficult to prepare are solved.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of memory devices, and particularly relates to a multi-ferroic racetrack memory device based on ferroelectric phase Mn2NO2 and a preparation and use method thereof. BACKGROUND

[0002] In recent years, the rapid development of information technology has put forward higher requirements for data storage performance. Among various storage technologies, magnetic storage has undergone an important evolution from traditional hard disks to Skyrmion-based Racetrack Memory. Racetrack Memory realizes data storage by controlling the movement of magnetic domain walls in nanowires, significantly improving storage speed and durability. However, its information writing process still relies on spin current injection, which has the limitation of high energy consumption. On the other hand, ferroelectric memory uses the polarization direction of ferroelectric materials to store data, with nanosecond-level writing speed and low power consumption characteristics. However, it faces the density bottleneck caused by the size reduction limit of the unit, as well as the problem of fatigue aging.

[0003] Multi-ferroic materials have both ferroelectricity and ferromagnetism, providing a new way for the development of a new generation of low-power and high-density memory. However, the electric polarization effect of traditional bulk multi-ferroic materials significantly weakens at the nanoscale, making it difficult to meet the requirements of high-integration devices. Although two-dimensional multi-ferroic materials have attracted widespread attention in recent years, the types discovered so far are limited, and most of them have weak electric polarization or insufficient ferromagnetism, which cannot meet the performance requirements of actual non-volatile memory. In addition, existing schemes for realizing dual-state storage are mostly based on multi-phase composite materials or complex heterostructures, which often have significant interface effects, complex preparation processes, limited coupling strength, and poor compatibility with existing semiconductor technologies. Therefore, developing a new type of memory device with simple structure, strong magnetic-electric coupling effect, and easy micro-nano processing has become an urgent technical requirement in the field.

[0004] In view of the above challenges, it is necessary to provide a multi-ferroic racetrack memory device based on ferroelectric phase Mn2NO2 and a preparation and use method thereof. SUMMARY

[0005] The technical problem to be solved by the present application is to provide a multi-ferroic racetrack memory device based on ferroelectric phase Mn2NO2 to overcome the shortcomings of the prior art. The memory device has a simple structure, and the core material is only ferroelectric phase Mn2NO2 nanosheet. The same region is written with binary signals by setting a writing electrode for electric polarization and magnetization. The electric polarization and magnetic storage are realized by the reading electrode to sense the electric polarization and magnetization signals in the region for information reading and analysis. The problems of existing multi-ferroic materials that cannot obtain further small-size multi-ferroic materials due to size effect, and two-dimensional materials that cannot coexist with ferroelectricity and ferromagnetism, and cannot prepare intrinsic small-size multi-ferroic electronic devices are solved.

[0006] To solve the above technical problems, the technical scheme adopted by the present application is: a multi-ferro racetrack memory device based on ferroelectric phase Mn2NO2, characterized in that the memory device comprises a substrate, the substrate is provided with ferroelectric phase Mn2NO2 nanosheets, a write electrode and a read electrode are respectively arranged above the ferroelectric phase Mn2NO2 nanosheets, the write electrode comprises a write capacitor and a write head, the read electrode comprises a read capacitor and a read head, and the read electrode is connected with a signal interpreter.

[0007] The multi-ferro racetrack memory device based on ferroelectric phase Mn2NO2 described above is characterized in that the substrate is a semiconductor material or an insulator substrate with an insulating layer on the surface, and the semiconductor material is Si, GaAs, MgO or Al2O3.

[0008] The multi-ferro racetrack memory device based on ferroelectric phase Mn2NO2 described above is characterized in that the write capacitor and the read capacitor are both made of ceramic capacitor materials, the ceramic capacitor material is barium titanate or titanium dioxide, and the write head and the read head are both made of magnetoresistance materials, and the magnetoresistance material is CoFe / NiFe / CoFe three-layer magnetoresistance.

[0009] In addition, the present application also provides a method for preparing a multi-ferro racetrack memory device based on ferroelectric phase Mn2NO2, characterized in that the method comprises the following steps: Step one, preparing single-layer ground-state paraelectric phase Mn2NO2 nanosheets; Step two, regulating the single-layer ground-state paraelectric phase Mn2NO2 nanosheets prepared in step one into single-layer ferroelectric phase Mn2NO2 nanosheets by strain or electron injection; Step three, transferring the single-layer ferroelectric phase Mn2NO2 nanosheets regulated in step two onto the substrate and dividing the in-plane area into multiple nanometer regions with uniform size as the smallest unit of signal storage to obtain a basic structure; Step four, placing the basic structure obtained in step three on a mechanical device for two-dimensional motion, then connecting the write capacitor and the write head to the external circuit respectively, packaging and integrating into the write electrode, connecting the read capacitor and the read head to the external circuit respectively, packaging and integrating into the read electrode, and then connecting with the signal interpreter to obtain the multi-ferro racetrack memory device based on ferroelectric phase Mn2NO2.

[0010] The application stretches or compresses the single-layer Mn2NO2 ground-state paraelectric phase nanosheet two-dimensional material by strain, makes it generate a phase transition under external pressure, overcomes the Schottky barrier caused by the work function difference at the metal-two-dimensional material interface by injecting electrons into the two-dimensional material from the external electrode through the process of electron injection, effectively introduces the electrons into the conduction channel of the two-dimensional material, changes the carrier concentration and Fermi level thereof, and finally controls the electrical properties thereof, so that the single-layer ferroelectric phase Mn2NO2 nanosheet is controlled.

[0011] In the application, the electron injection can also be hole injection, which is the process of extracting electrons from the valence band of the two-dimensional material through the external electrode, thereby generating positively charged hole carriers in the valence band thereof, and the efficiency thereof is also determined by the Schottky barrier height of the metal-two-dimensional material interface.

[0012] In the application, the ferroelectric phase Mn2NO2 nanosheet is laid on the substrate by transfer, the size of each nanometer region is ensured to be the same through in-plane region division, information writing and reading are performed in different nanometer regions, and a high-integration single-material raceway memory is formed.

[0013] In the application, the mechanical device for in-plane two-dimensional movement refers to the mechanical structure of a hard disk, that is, the mechanical device drives the substrate and thus the single-layer ferroelectric phase Mn2NO2 nanosheet moves, so that each nanometer region of the single-layer ferroelectric phase Mn2NO2 nanosheet is sequentially matched with the writing electrode or the reading electrode for writing or reading.

[0014] In the application, the external circuit is a circuit connection in a conventional electronic device, and only needs to provide a specific voltage and current.

[0015] In addition, the application also provides a use method of a ferroelectric phase Mn2NO2-based multi-ferro raceway memory device, and the method comprises the following steps: Step one, information writing: the ferroelectric phase Mn2NO2 nanosheet is moved by the substrate, the writing capacitor and the writing head of the writing electrode are controlled by the external circuit to generate an alternating electric field and an alternating magnetic field at the same time, the ferroelectric phase Mn2NO2 nanosheet in different nanometer regions is polarized and magnetized, the electric signal and the magnetic signal are written into the ferroelectric phase Mn2NO2 nanosheet, the information storage is completed, and the ferroelectric phase Mn2NO2 nanosheet with the stored information is obtained; Step two, reading information: the ferroelectric phase Mn2NO2 nanosheet obtained in step one is moved through the substrate, the reading capacitor in the reading electrode and the reading head perceive the electrode polarization direction and magnetization direction of different nanometer regions in the ferroelectric phase Mn2NO2 nanosheet, read the electric signal and magnetic signal and transmit to the signal interpreter to convert into binary digits, define that the upward and downward electrode polarization is 0 and 1 respectively, and the upward and downward magnetization is 0 and 1 respectively, finally convert the binary signal obtained in the signal interpreter into readable signal, complete the reading of information.

[0016] In the present application, during the movement of the ferroelectric phase Mn2NO2 nanosheet in a certain direction, the writing capacitor in the writing electrode and the writing head generate different oriented electric field and magnetic field respectively by independent external circuit, and the ferroelectric phase Mn2NO2 nanosheet is subjected to different oriented polarization and magnetization, and the binary polarization and magnetic signals are written in the same region at the same time; when reading information, the ferroelectric phase Mn2NO2 nanosheet moves in a certain direction, the reading capacitor in the reading electrode and the reading head perceive the polarization and magnetization signals in the region, and read the information.

[0017] The method has the characteristics that the ferroelectric phase Mn2NO2 nanosheet in step one is divided into different tracks before writing information, and the track is a row or a column of nanometer regions.

[0018] The method has the characteristics that after the writing information in step one or the reading information in step two is written in a single track, the ferroelectric phase Mn2NO2 nanosheet is moved to the next track relative to the writing electrode or the reading electrode, and the writing information or the reading information in a single track is repeated.

[0019] Compared with the prior art, the present application has the following advantages: 1、The storage device of the present application has simple structure, and the core material is only the ferroelectric phase Mn2NO2 nanosheet, which is subjected to polarization and magnetization in the same region by the writing electrode arranged thereon to write binary signal, and the polarization and magnetization are stored, and the polarization and magnetization signals in the region are sensed by the reading electrode to read and analyze information, which solves the problems that the size effect of the existing multiferroic material cannot obtain further small size multiferroic material, and the two-dimensional material is difficult to coexist with ferroelectricity and ferromagnetism, and it is difficult to prepare intrinsic small size multiferroic electronic device.

[0020] 2. The Mn2NO2 in this invention belongs to MXenes materials, which is a new type of two-dimensional material. It can be prepared by etching MAX ceramic materials with solutions such as hydrofluoric acid. The ferroelectric phase of Mn2NO2 is a newly discovered phase structure. Mn2NO2 itself has both ferroelectricity and ferromagnetism (i.e., multiferroicity). In intrinsic single-phase materials, the coexistence and mutual control of polarization and magnetopolarization can be achieved. Polarization reversal can be achieved under an external electric field, and magnetization reversal can be achieved under an external magnetic field, thus taking into account the coexistence of ferroelectricity and ferromagnetism.

[0021] 3. The multi-ferroelectric track memory device based on ferroelectric phase Mn2NO2 provided by this invention is a new path to achieve intrinsic electrical and magnetic dual-sequence parametric storage in the same homogeneous material. It effectively solves the inherent contradiction between traditional flash memory and magnetic storage technology in terms of power consumption, lifespan and speed. The device utilizes the strong magnetoelectric coupling characteristics of the material itself to achieve an ultra-low power operation mode of "electric writing and magnetic reading", which significantly reduces writing power consumption. At the same time, a single cell can exhibit polymorphic storage, which greatly improves the integration density.

[0022] 4. The ferroelectric Mn2NO2 nanosheets of this invention simultaneously exhibit strong in-plane ferromagnetism and stable polarization characteristics. This not only overcomes the problem of polarization decay in traditional multiferroic materials at the nanoscale, but also makes up for the shortcomings of insufficient magnetoelectric properties in existing two-dimensional multiferroic materials. Multiferroic track memory constructed based on this material can simultaneously write magnetization and polarization states in the same memory cell, laying a physical foundation for realizing multi-bit storage and significantly improving storage density. It also provides an ideal platform for the development of ultra-low power operation and new multifunctional devices, thus effectively solving the inherent limitations of traditional single-mode storage technology. It has significant technological advancements and application prospects.

[0023] The technical solution of the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of the structure of the ferroelectric phase Mn2NO2 multiferroic track storage device of the present invention.

[0025] Figure 2 This is a schematic diagram illustrating the writing and reading of electrical and magnetic signals in the ferroelectric Mn2NO2 multiferroic track memory device of the present invention.

[0026] Figure 3 The diagram shows the crystal structure of Mn2NO2 in the ground state paraelectric phase or ferroelectric phase, respectively, and the transformation mechanism of Mn2NO2 from the ground state paraelectric phase to the ferroelectric phase.

[0027] Figure 4 The results show the stability calculations for the ferroelectric phase Mn2NO2 and the ground-state paraelectric phase Mn2NO2 crystal structures of this invention.

[0028] Figure 5 Atomic structure of ferroelectric phase Mn2NO2 and corresponding electric polarization orientation and out-of-plane electrostatic potential map.

[0029] Figure 6 Magnetic configuration energy contrast and magnetic anisotropy of ferroelectric phase Mn2NO2.

[0030] Figure 7 Storage array schematic of a multiferroic racetrack memory device of ferroelectric phase Mn2NO2.

[0031] BRIEF DESCRIPTION OF DRAWINGS DETAILED DESCRIPTION

[0032] A multiferroic racetrack memory device based on ferroelectric phase Mn2NO2 of the present application is described in detail by way of Example 1.

[0033] Example 1 As shown in Figure 1 and Figure 2 A multiferroic racetrack memory device based on ferroelectric phase Mn2NO2 of the present embodiment includes a substrate 1, on which a ferroelectric phase Mn2NO2 nanosheet 2 is arranged, a write electrode 3 and a read electrode 4 are arranged above the ferroelectric phase Mn2NO2 nanosheet 2 respectively, the write electrode 3 includes a write capacitor 5 and a write head 6, the read electrode 4 includes a read capacitor 7 and a read head 8, and the read electrode 7 is connected with a signal interpreter 9.

[0034] It should be noted that the ferroelectric phase structure in the ferroelectric phase Mn2NO2 nanosheet 2 has stability at room temperature, the ferromagnetism and the spontaneous ferroelectric polarization are both out-of-plane directions, and are independent of each other, by arranging the write capacitor 5 and the write head 6, the region polarization and magnetization direction of the ferroelectric phase Mn2NO2 nanosheet 2 are changed by applying electric field and magnetic field respectively, so as to write the electric and magnetic signals, by arranging the read capacitor 7 and the read head 8, the region polarization and magnetization direction in the ferroelectric phase Mn2NO2 nanosheet 2 are read respectively, so as to read the electric and magnetic signals, and the signal is analyzed by the signal interpreter 9, which solves the problems that the size effect of the existing multiferroic material cannot obtain further small-size multiferroic material, and the two-dimensional material is difficult to coexist with ferroelectricity and ferromagnetism, and it is difficult to prepare intrinsic small-size multiferroic electronic devices.

[0035] In the present embodiment, the substrate 1 is a semiconductor material or an insulator substrate with an insulating layer on the surface, and the semiconductor material is Si, GaAs, MgO or Al2O3. By controlling the material of the substrate, the ferroelectric phase Mn2NO2 nanosheet is supported.

[0036] In this embodiment, the write capacitor 5 and the read capacitor 7 are both made of ceramic capacitor material, which is barium titanate or titanium dioxide, and the write head 6 and the read head 8 are both made of magnetoresistive material, which is CoFe / NiFe / CoFe three-layer magnetoresistance. By controlling the materials of the write capacitor 5, the read capacitor 7, the write head 6 and the read head 8, it is convenient to cooperate with the ferroelectric phase Mn2NO2 nanosheet 2 to complete the writing and reading of signals.

[0037] It should be noted that the CoFe / NiFe / CoFe three-layer magnetoresistance is a three-layer structure, and the materials of each layer are CoFe, NiFe and CoFe in turn.

[0038] A method for preparing a multi-ferro racetrack memory device based on the ferroelectric phase Mn2NO2 according to the application is described in detail in Embodiment 2.

[0039] Embodiment 2 This embodiment includes the following steps: Step one, preparing a single-layer ground-state paraelectric phase Mn2NO2 nanosheet; Step two, regulating the single-layer ground-state paraelectric phase Mn2NO2 nanosheet prepared in step one into a single-layer ferroelectric phase Mn2NO2 nanosheet by strain or electron injection; Step three, transferring the single-layer ferroelectric phase Mn2NO2 nanosheet regulated in step two to the substrate and dividing it into multiple nanometer regions with uniform size as the smallest unit of signal storage in the plane, to obtain a basic structure; Step four, placing the basic structure obtained in step three on a mechanical device that moves in two dimensions, then connecting the write capacitor and the write head to the external circuit respectively, and packaging and integrating them into a write electrode, connecting the read capacitor and the read head to the external circuit respectively, and packaging and integrating them into a read electrode, and then connecting them to a signal interpreter, to obtain a multi-ferro racetrack memory device based on the ferroelectric phase Mn2NO2.

[0040] Figure 3 Fig. 1 is a schematic diagram of the crystal structure of Mn2NO2 as a ground-state paraelectric phase or a ferroelectric phase, and a transition mechanism diagram of Mn2NO2 from a ground-state paraelectric phase to a ferroelectric phase, Figure 3 The upper part is a schematic diagram of the crystal structure, and the middle and lower parts are transition mechanism diagrams, from Figure 3 As can be seen, the crystal structures of Mn2NO2 as a ground-state paraelectric phase and a ferroelectric phase are not the same, and the structure transition is achieved by translating the single-sided Mn-O layer in the ground-state paraelectric phase Mn2NO2 to obtain the ferroelectric phase Mn2NO2.

[0041] Figure 4The calculation results of the stability of the crystal structure of the ferroelectric phase Mn2NO2 and the ground paraelectric phase Mn2NO2 of the application, Figure 4 In (a), the calculation results of the phase transition barrier, (b) is the first principle molecular dynamics calculation results, PE represents the ground paraelectric phase, and FE represents the ferroelectric phase. As shown in (a), the phase transition barrier of the ground paraelectric phase Mn2NO2 and the ferroelectric phase Mn2NO2 is 0.325 eV / f.u., which indicates that the ferroelectric phase Mn2NO2 does not spontaneously change under the external stimulus, that is, the ferroelectric phase has a certain stability, and as shown in (b), the ferroelectric phase structure energy fluctuates stably after the ferroelectric phase Mn2NO2 runs for 6 ps at 300 K, and the structure does not have obvious distortion, which indicates that the phase structure has stability at normal temperature, and the device made of the same can work stably at normal temperature.

[0042] Figure 5 The atomic structure, corresponding polarization orientation and out-of-plane electrostatic potential diagram of the ferroelectric phase Mn2NO2 of the application, Figure 5 In (a), the atomic structure, corresponding polarization orientation and out-of-plane electrostatic potential diagram of the ferroelectric phase Mn2NO2 when the polarization direction is upward, and (b) is the atomic structure, corresponding polarization orientation and out-of-plane electrostatic potential diagram of the ferroelectric phase Mn2NO2 when the polarization direction is downward. As shown in (a) and (b), the ferroelectric phase Mn2NO2 is a surface polarization, that is, perpendicular to the material surface, the polarization direction is related to the position of the N atom in the middle layer, when the N atom is inclined to the upper surface, the polarization direction is downward, and when the N atom is inclined to the lower surface, the polarization direction is upward.

[0043] Figure 6 The magnetic configuration energy contrast and magnetic anisotropy of the ferroelectric phase Mn2NO2 of the application, Figure 6 In (a), the magnetic configuration energy contrast of the ferroelectric phase Mn2NO2, and the four small diagrams respectively represent the four magnetic configuration distributions of the ferroelectric phase Mn2NO2, that is, ferromagnetic, anti-ferromagnetic I, II and III, and (b) is the magnetic anisotropy of the ferroelectric phase Mn2NO2. As shown in (a) and (b), the ferroelectric phase Mn2NO2 still shows ferromagnetism, and the magnetization direction is the out-of-plane direction, which is independent of the polarization direction, which indicates that the magnetism and the electricity in the material are independent of each other and do not affect each other, and the independent magnetization or polarization can be carried out.

[0044] The use method of the multi-ferro track memory device based on the ferroelectric phase Mn2NO2 of the application is described in detail through Example 3.

[0045] Step one, write information: the ferroelectric phase Mn2NO2 nanosheet is moved by the substrate, the write capacitor and the write head of the electrode are controlled by the external circuit to generate an alternating electric field and an alternating magnetic field at the same time, the ferroelectric phase Mn2NO2 nanosheet in different nanometer regions is polarized and magnetized, the electric signal and the magnetic signal are written into the ferroelectric phase Mn2NO2 nanosheet, the storage of information is completed, and the ferroelectric phase Mn2NO2 nanosheet with stored information is obtained; Step two, read information: the ferroelectric phase Mn2NO2 nanosheet with stored information obtained in step one is moved by the substrate, the read capacitor and the read head in the electrode perceive the polarization direction and the magnetization direction of the ferroelectric phase Mn2NO2 nanosheet in different nanometer regions, the electric signal and the magnetic signal are read and transmitted to the signal interpreter to be converted into binary digits, the polarization upward and downward are respectively 0 and 1, the magnetization upward and downward are respectively 0 and 1, finally the binary signal obtained in the signal interpreter is converted into readable signals, the reading of information is completed; the ferroelectric phase Mn2NO2 nanosheet is divided into different tracks before writing information, the track is a row or a column of nanometer regions, see Figure 7 , the track is divided into track I, track II, track III, etc., after the information is written or read according to the above steps for a single track, the ferroelectric phase Mn2NO2 nanosheet is moved to the next track relative to the write electrode or the read electrode, and the information writing or reading of a single track is repeated.

[0046] The above is only a preferred embodiment of the present application, and does not limit the present application. Any simple modification, change and equivalent change made according to the technical essence of the application to the above embodiment are still within the protection scope of the technical solution of the present application.

Claims

1. A multiferroic racetrack memory device based on ferroelectric phase Mn2NO2, characterized in that, The memory device comprises a substrate, a ferroelectric phase Mn2NO2 nanosheet is arranged on the substrate, a write electrode and a read electrode are respectively arranged above the ferroelectric phase Mn2NO2 nanosheet, the write electrode comprises a write capacitor and a write head, the read electrode comprises a read capacitor and a read head, and the read electrode is connected with a signal interpreter.

2. The multiferroic racetrack memory device based on ferroelectric phase Mn2NO2 of claim 1, wherein, The substrate is a semiconductor material or an insulator substrate, and the semiconductor material is Si, GaAs, MgO or Al2O3.

3. The multiferroic racetrack memory device based on ferroelectric phase Mn2NO2 of claim 1, wherein, The write capacitor and the read capacitor are both made of ceramic capacitor material, and the ceramic capacitor material is barium titanate or titanium dioxide; the write head and the read head are both made of magnetoresistance material, and the magnetoresistance material is CoFe / NiFe / CoFe three-layer magnetoresistance.

4. A method of fabricating a multiferroic racetrack memory device based on the ferroelectric phase Mn2NO2 as claimed in any one of claims 1 to 3, characterized in that, The method comprises the following steps: Step one, preparing a single-layer ground paraelectric phase Mn2NO2 nanosheet; Step two, regulating the single-layer ground paraelectric phase Mn2NO2 nanosheet prepared in step one into a single-layer ferroelectric phase Mn2NO2 nanosheet by strain or electron injection; Step three, transferring the single-layer ferroelectric phase Mn2NO2 nanosheet regulated in step two to the substrate and dividing the area in the plane to obtain a basic structure, wherein the basic structure is divided into multiple nanometer regions with uniform size as the smallest unit of signal storage; Step four, placing the basic structure obtained in step three on a mechanical device moving in the plane, then connecting the write capacitor and the write head to the external circuit respectively, packaging and integrating into the write electrode, connecting the read capacitor and the read head to the external circuit respectively, packaging and integrating into the read electrode, and then connecting with the signal interpreter to obtain a multi-ferroelectric race track memory device based on the ferroelectric phase Mn2NO2.

5. A method of using a multiferroic racetrack memory device based on the ferroelectric phase Mn2NO2 as claimed in any one of claims 1 to 3, characterized in that, The method comprises the following steps: Step one, writing information: moving the ferroelectric phase Mn2NO2 nanosheet by the substrate, and simultaneously generating an alternating electric field and an alternating magnetic field by the write capacitor and the write head of the write electrode controlled by the external circuit, so as to polarize and magnetize the ferroelectric phase Mn2NO2 nanosheet in different nanometer regions, write electric signals and magnetic signals into the ferroelectric phase Mn2NO2 nanosheet, complete the storage of information, and obtain the ferroelectric phase Mn2NO2 nanosheet storing information; Step two, reading information: moving the ferroelectric phase Mn2NO2 nanosheet storing information obtained in step one by the substrate, and sensing the polarization direction and magnetization direction of different nanometer regions in the ferroelectric phase Mn2NO2 nanosheet by the read capacitor and the read head in the read electrode, reading the electric signals and the magnetic signals and transmitting them to the signal interpreter to be converted into binary digits, wherein the upward and downward polarizations are respectively defined as 0 and 1, and the upward and downward magnetizations are respectively defined as 0 and 1, finally converting the binary signals obtained in the signal interpreter into readable signals to complete the reading of information.

6. The method of claim 5, wherein, The ferroelectric phase Mn2NO2 nanosheet in step one is divided into different races before writing information, and the race is a row or a column of nanometer regions.

7. The method of claim 6, wherein, After the writing information in step one or the reading information in step two is performed for a single race track, the ferroelectric phase Mn2NO2 nanosheet is moved to the next race track relative to the writing electrode or the reading electrode, and the writing information or the reading information of a single race track is repeated.

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