Transient voltage suppressor and manufacturing method

Abstract

The invention discloses a transient voltage suppressor and a manufacturing method thereof, and the transient voltage suppressor comprises a first transient voltage suppression unit which is formed on a first substrate area and is provided with a first external end and a first connection end; the second transient voltage suppression unit is formed on a second substrate area and is provided with a second external end and a second connecting end; and the connecting path is at least partially not formed on the first substrate area and the second substrate area and is used for electrically connecting the first connecting end and the second connecting end.

Description

Technical Field

[0001] This invention relates to the field of circuit protection, specifically to a transient voltage suppressor and its manufacturing method. Background Technology

[0002] Excessive or transient voltage changes in integrated circuits can damage the device. Typical transient voltages may include those generated during normal power supply operation, AC line transitions, electrical surges, and electrostatic discharge (ESD). Transient voltage suppressors are used to clamp voltage surges in circuits, limiting the voltage to downstream components and thus preventing circuit malfunctions.

[0003] Existing transient voltage suppressors are divided into unidirectional and bidirectional types. Bidirectional transient voltage suppressors can function in the face of either positive or negative transient voltages. However, manufacturing bidirectional transient voltage suppressors requires additional epitaxy processes, deep trench processes, metal-2 processes, and / or via processes to avoid parasitic components. These additional processes increase the manufacturing difficulty of bidirectional transient voltage suppressors. Therefore, the cost and manufacturing difficulty differences between bidirectional and unidirectional transient voltage suppressors are significant.

[0004] Furthermore, due to their circuit structure, unidirectional transient voltage suppressors have a relatively higher overall component capacitance compared to bidirectional transient voltage suppressors. This makes them more difficult to apply for transient voltage protection in high-frequency circuit devices (e.g., communications).

[0005] Therefore, it is necessary to create a transient voltage suppressor that is lower in cost and has lower overall component capacitance, but can still achieve bidirectional voltage regulation. Summary of the Invention

[0006] The purpose of this invention is to provide a transient voltage suppressor and method that is simple in process and low in manufacturing cost.

[0007] To achieve the above objectives, the present invention adopts the following technical solution:

[0008] The transient voltage suppressor of the present invention includes: a first transient voltage suppression unit formed on a first substrate region and having a first external terminal and a first connection terminal; a second transient voltage suppression unit formed on a second substrate region and having a second external terminal and a second connection terminal; and a connection path, at least partially not formed on the first substrate region and the second substrate region and used to electrically connect the first connection terminal and the second connection terminal.

[0009] The present invention discloses a method for manufacturing a transient voltage suppressor, comprising: forming a first transient voltage suppressor unit on a substrate, wherein the first transient voltage suppressor unit has a first external terminal and a first connection terminal; forming a second transient voltage suppressor unit on the substrate, wherein the second transient voltage suppressor unit has a second external terminal and a second connection terminal; performing a dicing process on the substrate to separate a first substrate region where the first transient voltage suppressor unit is disposed and a second substrate region where the second transient voltage suppressor unit is disposed; and providing a connection path for electrically connecting the first connection terminal and the second connection terminal.

[0010] The transient voltage suppressor of this invention can achieve bidirectional current discharge under different electrical connection conditions, and the series connection of two transient voltage suppression units can also reduce the component capacitance. That is, the component function of this invention is exactly the same as that of the traditional bidirectional transient voltage suppressor, but the manufacturing cost of this invention is lower. Attached Figure Description

[0011] Figure 1 This is a schematic diagram of the transient voltage suppressor of the present invention.

[0012] Figure 2 This is a schematic diagram showing the addition of a packaging frame to the transient voltage suppressor of the present invention.

[0013] Figure 3 This is a schematic diagram showing the electrical connection between the transient voltage suppressor and the packaging frame of the present invention.

[0014] Figure 4A and Figure 4B This is a diagram of an embodiment of the transient voltage suppressor of the present invention.

[0015] Figure 4C This is a schematic diagram of the current path of an embodiment of the transient voltage suppressor of the present invention when facing a positive voltage.

[0016] Figure 4D This is a schematic diagram of the current path of an embodiment of the transient voltage suppressor of the present invention when facing reverse bias.

[0017] Figure 4E and Figure 4F This is a diagram of an embodiment of the transient voltage suppressor of the present invention.

[0018] Figure 4G This is a schematic diagram of the current path of an embodiment of the transient voltage suppressor of the present invention when facing a positive voltage.

[0019] Figure 4H This is a schematic diagram of the current path of an embodiment of the transient voltage suppressor of the present invention when facing reverse bias.

[0020] Figure 5A and Figure 5B This is a diagram of an embodiment of the transient voltage suppressor of the present invention.

[0021] Figure 5C This is a schematic diagram of the current path of an embodiment of the transient voltage suppressor of the present invention when facing a positive voltage.

[0022] Figure 5D This is a schematic diagram of the current path of an embodiment of the transient voltage suppressor of the present invention when facing reverse bias.

[0023] Figure 6 This is an example diagram of adding a cutting channel to the transient voltage suppressor of the present invention.

[0024] Figure 7A This is a schematic diagram of an embodiment of the transient voltage suppressor of the present invention.

[0025] Figure 7B This is a schematic diagram of the current path of an embodiment of the transient voltage suppressor of the present invention when facing a positive voltage.

[0026] Figure 7C This is a schematic diagram of the current path of an embodiment of the transient voltage suppressor of the present invention when facing reverse bias.

[0027] Figure 8A This is a schematic diagram of an embodiment of the transient voltage suppressor of the present invention.

[0028] Figure 8B This is a schematic diagram of the current path of an embodiment of the transient voltage suppressor of the present invention when facing a positive voltage.

[0029] Figure 8C This is a schematic diagram of the current path of an embodiment of the transient voltage suppressor of the present invention when facing reverse bias.

[0030] Figure 9 This is a flowchart illustrating the manufacturing method of the transient voltage suppressor of the present invention.

[0031] Figures 10A to 10C This is a schematic diagram illustrating the fabrication method of the transient voltage suppressor of the present invention.

[0032] Figure 11 This is a schematic diagram of the internal structure process of the transient voltage suppressor of the present invention.

[0033] Figure 12 This is a schematic diagram of the connection path during the fabrication of the transient voltage suppressor of the present invention.

[0034] Figure 13 This is a schematic diagram of another connection path during the fabrication of the transient voltage suppressor of the present invention.

[0035] Figure 14 This is another schematic diagram of the connection path during the fabrication of the transient voltage suppressor of the present invention. [Symbol Explanation]

[0036] 10 Transient Voltage Suppressor 100 First Transient Voltage Suppression Unit 110 First substrate region 120 First external terminal 130 First connection terminal 140 First Zener diode 145 First bipolar junction transistor; 150 First diode 160 Second Diode 170 First Diode Connection Terminal 200 Second transient voltage suppression unit 210 Second substrate region 220 Second external terminal 230 Second connection terminal 240 Second Zener Diode; 245 Second Bipolar Junction Transistor 250 third diode 260 fourth diode 270 Second diode connection terminal 300 Connection path 400 package frame 510 first direction transient voltage 511 First direction current 520 Second direction transient voltage 521 Second Direction Current 600 Cutting Track 610 Solid Molding Material 900 Flowchart 910, 920, 930 square 1000, 1000' substrate 1110 well process, 1120 high-concentration doping process Detailed Implementation

[0037] Various embodiments will be described below, and those skilled in the art should readily understand the spirit and principles of the invention by referring to the description and accompanying drawings. However, while specific embodiments will be described in detail herein, these embodiments are merely illustrative and are not intended to be limiting or exhaustive in any respect. Therefore, various changes and modifications to the invention will be readily apparent and easily achievable by those skilled in the art without departing from the spirit and principles of the invention.

[0038] Reference Figure 1This is a schematic diagram of the transient voltage suppressor 10 of the present invention, which includes: a first transient voltage suppression unit 100, a second transient voltage suppression unit 200, and a connection path 300. The first transient voltage suppression unit 100 is formed on a first substrate region 110 and has a first external terminal 120 and a first connection terminal 130. The first external terminal 120 serves as an input or output current port when facing transient voltage. The first connection terminal 130 serves as a connection to other transient voltage suppression units (e.g., the second transient voltage suppression unit 200) or a package frame (not shown). Figure 1 The second transient voltage suppression unit 200 is formed on the second substrate region 210 and has a second external terminal 220 and a second connection terminal 230. The second external terminal 220 serves as an input or output current port when facing transient voltage. The second connection terminal 230 serves as a port for connecting other transient voltage suppression units (e.g., the first transient voltage suppression unit 100) or a package frame. The connection path 300 is at least partially not formed on the first substrate region 110 and the second substrate region 210 and is used to electrically connect the first connection terminal 130 and the second connection terminal 230. Specifically, the first substrate region 110 and the second substrate region 210 can be any region on the substrate. The substrate forming the first substrate region 110 and the second substrate region 210 can be of P-type or N-type conductivity type.

[0039] When the transient voltage suppressor 10 encounters a transient voltage, the first transient voltage suppression unit 100 and the second transient voltage suppression unit 200 correspond to transient voltages of different phases. For example, when a transient voltage enters the transient voltage suppressor 10 from the first external terminal 120, the first transient voltage suppression unit 100 suppresses the transient voltage, and the second transient voltage suppression unit 200 is turned on. When a transient voltage enters the transient voltage suppressor 10 from the second external terminal 220, the first transient voltage suppression unit 100 is turned on, and the second transient voltage suppression unit 200 suppresses the transient voltage. In other words, a transient voltage can enter from either the first external terminal 120 or the second external terminal 220 (e.g., the first external terminal 120), pass through the connection path 300 between the first connection terminal 130 and the second connection terminal 230, and then exit from the other of the first external terminal 120 or the second external terminal 220 (e.g., the second external terminal 220). After the first transient voltage suppression unit 100 and the second transient voltage suppression unit 200 are electrically connected through the connection path 300, they can respectively correspond to transient voltages of different phases. It should be noted that the present invention is not limited to the number of transient voltage suppression units. For example, there can be a plurality of transient voltage suppression units, each corresponding to a transient voltage of a different phase, but it is not limited thereto.

[0040] The connection path 300 can be any electrical connection method. The connection path 300 is at least partially not formed on the first substrate region 110 and the second substrate region 210. In other words, the first transient voltage suppression unit 100 and the second transient voltage suppression unit 200 do not directly form a complete connection path on the substrate to electrically connect the first connection terminal 130 and the second connection terminal 230. In a specific embodiment, the connection path 300 is a conductor line of a metal wire bonding process, but is not limited thereto. The connection path 300 prevents the first substrate region 110 and the second substrate region 210 from being directly connected on the substrate. Therefore, the first substrate region 110 and the second substrate region 210 do not interact with each other. Furthermore, the first transient voltage suppression unit 100 and the second transient voltage suppression unit 200 may also eliminate the need for the additional processes required by the bidirectional transient voltage suppressor in the prior art. This achieves the goal of reducing component capacitance and lowering manufacturing difficulty and cost.

[0041] In one embodiment, reference is made to Figure 2 This is a schematic diagram of the transient voltage suppressor 10 including the encapsulation frame 400 of the present invention. Specifically, the first transient voltage suppression unit 100 and the second transient voltage suppression unit 200 are disposed in the accommodating space formed by the encapsulation frame 400. The encapsulation frame 400 isolates the first transient voltage suppression unit 100 and the second transient voltage suppression unit 200 from the outside environment. This makes the transient voltage suppressor 10 integral, maintaining the transient voltage suppression function while reducing the influence of external factors.

[0042] In an embodiment of the encapsulation framework, refer to Figure 3 . Figure 3 This diagram illustrates the electrical connection between the first transient voltage suppression unit 100 and the second transient voltage suppression unit 200 through the encapsulation frame 400. Specifically, the encapsulation frame 400 is made of a conductive material, and the first connection terminal 130 and the second connection terminal 230 are electrically connected to the encapsulation frame 400. In other words, a connection path 300 electrically connecting the first connection terminal 130 and the second connection terminal 230 is formed on the encapsulation frame 400. In this embodiment, when faced with a transient voltage, the transient current will enter from either the first external terminal 120 or the second external terminal 220, pass through the connection path 300 formed on the encapsulation frame 400, and then exit from the other of the first external terminal 120 or the second external terminal 220. In this path, the transient voltage will be suppressed by either the first transient voltage suppression unit 100 or the second transient voltage suppression unit 200, while the other is conducting. By providing the connection path 300 through the encapsulation frame 400, the transient voltage suppressor 10 can adapt to different wiring (layout) requirements. On the other hand, the encapsulation frame 400 can allow for larger transient currents and achieve the goal of reducing overall component capacitance and production costs.

[0043] In another embodiment, reference is made to Figure 4A and Figure 4B This is another schematic diagram of the transient voltage suppressor 10 of the present invention. Figure 4A In this embodiment, the first transient voltage suppression unit 100 includes a first Zener diode 140. The first Zener diode 140 utilizes the Zener effect of a diode under reverse bias operation to stabilize voltage. In this embodiment, the first external terminal 120 of the first transient voltage suppression unit 100 is defined as the anode or cathode of the first Zener diode 140, and the first connection terminal 130 is defined as the other terminal. It should be noted that the present invention is not limited to the first transient voltage suppression unit 100 and the second transient voltage suppression unit 200 having corresponding structures. In embodiments where the first transient voltage suppression unit 100 and the second transient voltage suppression unit 200 have corresponding structures, please refer to... Figure 4B The second transient voltage suppression unit 200 includes a second Zener diode 240, wherein the second external terminal 220 is defined as the anode or cathode of the Zener diode, and the second connection terminal 230 is defined as the other terminal. Specifically, when the first connection terminal 130 is defined as the anode of the first Zener diode 140, the second connection terminal 230 should be defined as the anode of the second Zener diode 240. In this way, the first Zener diode 140 and the second Zener diode 240 can respectively correspond to transient voltages in different directions.

[0044] In this embodiment, please refer to the specific transient current path. Figure 4C and Figure 4D .like Figure 4C As shown, connection path 300 electrically connects the anode of the first Zener diode 140 and the anode of the second Zener diode 240. When faced with a first-direction transient voltage 510 from the cathode of the first Zener diode 140 (i.e., the first external terminal 120), the first-direction transient voltage 510 generates a first-direction current 511. The first-direction current 511 flows to the first Zener diode 140, causing it to undergo Zener breakdown due to reverse bias, thus achieving voltage regulation. The first-direction current 511 then flows from the first connection terminal 130 to connection path 300, and after passing through connection path 300, it flows through the second connection terminal 230 to the second Zener diode 240, and is conducted out from the second external terminal 220.

[0045] like Figure 4DAs shown, connection path 300 electrically connects the anode of the first Zener diode 140 and the anode of the second Zener diode 240. When faced with a second-direction transient voltage 520 from the cathode of the second Zener diode 240 (i.e., the second external terminal 220), the second-direction transient voltage 520 generates a second-direction current 521. The second-direction current 521 flows to the second Zener diode 240, causing the second Zener diode 240 to undergo Zener breakdown due to reverse bias, thus achieving voltage regulation. The second-direction current 521 is then conducted from the second connection terminal 230 to connection path 300, and after passing through connection path 300, it flows through the first connection terminal 130 to the first Zener diode 140, and is conducted out from the first external terminal 120.

[0046] In another embodiment, reference is made to Figure 4E and Figure 4F This is another schematic diagram of the transient voltage suppressor 10 of the present invention. Figure 4E In this embodiment, the first transient voltage suppression unit 100 includes a first bipolar junction transistor 145. In this embodiment, the first bipolar junction transistor is an NPN structure. By connecting the base and emitter of the first bipolar junction transistor 145, the first bipolar junction transistor 145 is equivalent to a Zener diode structure and also has a voltage stabilization function. In this embodiment, the first external terminal 120 of the first transient voltage suppression unit 100 is defined as the collector or emitter of the bipolar junction transistor, and the first connection terminal 130 is defined as the other terminal. It should be noted that the present invention is not limited to the first transient voltage suppression unit 100 and the second transient voltage suppression unit 200 having corresponding structures, and the bipolar junction transistor can be an NPN or PNP structure. In embodiments where the first transient voltage suppression unit 100 and the second transient voltage suppression unit 200 have corresponding structures, please refer to... Figure 4F The second transient voltage suppression unit 200 includes a second bipolar junction transistor 245, wherein the second external terminal 220 is defined as the collector or emitter of the bipolar junction transistor, and the second connection terminal 230 is defined as the other terminal. Specifically, when the first connection terminal 130 is defined as the emitter of the first bipolar junction transistor 145, the second connection terminal 230 should be defined as the emitter of the second bipolar junction transistor 245. In this way, the first bipolar junction transistor 145 and the second bipolar junction transistor 245 can respectively correspond to transient voltages in different directions.

[0047] In this embodiment, please refer to the specific transient current path. Figure 4G and Figure 4H .like Figure 4GAs shown, connection path 300 electrically connects the emitter of the first bipolar junction diode 145 and the emitter of the second bipolar junction diode 245. When faced with a first-direction transient voltage 510 from the collector of the first bipolar junction diode 145 (i.e., the first external terminal 120), the first-direction transient voltage 510 generates a first-direction current 511. The first-direction current 511 flows to the first bipolar junction diode 145, causing the collector and base of the first bipolar junction diode 145 to achieve a voltage regulation function after the reverse bias voltage approximates Zener collapse. The first-direction current 511 then flows from the first connection terminal 130 to connection path 300, and after passing through connection path 300, it flows through the second connection terminal 230 to the second bipolar junction diode 245, and is conducted out from the second external terminal 220.

[0048] like Figure 4H As shown, connection path 300 electrically connects the emitter of the first bipolar junction diode 145 and the emitter of the second bipolar junction diode 245. When faced with a second-direction transient voltage 520 from the collector of the second bipolar junction diode 245 (i.e., the second external terminal 220), the second-direction transient voltage 520 generates a second-direction current 521. The second-direction current 521 flows to the second bipolar junction diode 245, causing the collector and base of the second bipolar junction diode 245 to achieve a voltage regulation function after the reverse bias voltage approximates Zener collapse. The second-direction current 521 is then conducted from the second connection terminal 230 to connection path 300, and after passing through connection path 300, it flows through the first connection terminal 130 to the first bipolar junction diode 145, and is conducted out from the first external terminal 120.

[0049] In another embodiment, reference is made to Figure 5A and Figure 5B This is another schematic diagram of the transient voltage suppressor 10 of the present invention. Figure 5A In this embodiment, the first transient voltage suppression unit 100 includes a first Zener diode 140, a first diode 150, and a second diode 160; wherein the cathode of the first diode 150 is electrically connected to the cathode of the first Zener diode 140; the anode of the second diode 160 is electrically connected to the anode of the first Zener diode 140; a first diode connection terminal 170 is electrically connected to the cathode of the second diode 160 and the anode of the first diode 150; a first external terminal 120 is defined as either the anode of the Zener diode or the first diode connection terminal 170, and a first connection terminal 130 is defined as the other. It should be noted that this invention is not limited to the first transient voltage suppression unit 100 and the second transient voltage suppression unit 200 having corresponding structures. In embodiments where the first transient voltage suppression unit 100 and the second transient voltage suppression unit 200 have corresponding structures, please refer to... Figure 5BThe architecture of the second transient voltage suppression unit 200 can be the same as that of the first transient voltage suppression unit 100. In this case, the second transient voltage suppression unit 200 includes a second Zener diode 240, a third diode 250, and a fourth diode 260. The cathode of the third diode 250 is electrically connected to the cathode of the second Zener diode 240, and the anode of the fourth diode 260 is electrically connected to the anode of the second Zener diode 240. The second diode connection terminal 270 is electrically connected to both the cathode of the fourth diode 260 and the anode of the third diode 250. The second external terminal 220 is defined as either the anode of the second Zener diode 240 or the second diode connection terminal 270, and the second connection terminal 230 is defined as the other. Specifically, when the first connection terminal 130 is defined as the anode of the first Zener diode 140, the second connection terminal 230 should be defined as the anode of the second Zener diode 240. Thus, the first Zener diode 140 and the second Zener diode 240 can respectively correspond to transient voltages in different directions.

[0050] In this embodiment, please refer to the specific transient current path. Figure 5C and Figure 5D ,like Figure 5C As shown, connection path 300 electrically connects the anode of the first Zener diode 140 and the anode of the second Zener diode 240. When faced with a first-direction transient voltage 510 from the first diode connection terminal 170 (i.e., the first external terminal 120), the first-direction transient voltage 510 generates a first-direction current 511. The first-direction current 511 is received through the first external terminal 120 and flows to the first diode 150. After being rectified by the first diode 150, it flows from the first diode 150 to the first Zener diode 140, causing the first Zener diode 140 to achieve voltage regulation after Zener breakdown due to reverse bias. The first-direction current 511 then flows from the first connection terminal 130 to connection path 300, and after passing through connection path 300, it flows through the second connection terminal 230 to the fourth diode 260. After being rectified by the fourth diode 260, it is conducted out from the second external terminal 220.

[0051] Reference Figure 5DConnection path 300 electrically connects the anode of the first Zener diode 140 and the anode of the second Zener diode 240. When faced with a second-direction transient voltage 520 from the second diode connection terminal 270 (i.e., the second external terminal 220), the second-direction transient voltage 520 generates a second-direction current 521. The second-direction current 521 is received through the second external terminal 220 and flows to the third diode 250. After being rectified by the third diode 250, it flows from the third diode 250 to the second Zener diode 240, causing the second Zener diode 240 to achieve voltage regulation after Zener breakdown due to reverse bias. The second-direction current 521 then flows from the second connection terminal 230 to the connection path 300, and after passing through the connection path 300, it flows through the first connection terminal 130 to the second diode 160. After being rectified by the second diode 160, it is conducted out from the first external terminal 120.

[0052] Reference Figure 6 This is a schematic diagram of the transient voltage suppressor 10 and the cleavage 600 of the present invention. The cleavage 600 is located between the first substrate region 110 and the second substrate region 210, preventing the formation of parasitic components between the first transient voltage suppressor unit 100 and the second transient voltage suppressor unit 200. The cleavage 600 may be less than 20µm in the manufacturing process. In one embodiment, the cleavage 600 is preferably provided with a solid molding material 610 to help prevent the formation of parasitic components between the first transient voltage suppressor unit 100 and the second transient voltage suppressor unit 200.

[0053] Reference Figure 7AThe diagram below illustrates another embodiment of the transient voltage suppressor 10 of the present invention. The first transient voltage suppressor unit 100 includes a first Zener diode 140, a first diode 150, and a second diode 160. The anode of the first Zener diode 140 serves as the first external terminal 120 of the first transient voltage suppressor 10 unit. The cathode of the first diode 150 is electrically connected to the cathode of the first Zener diode 140. The anode of the second diode 160 is electrically connected to the first external terminal 120. The anode of the first diode 150 and the cathode of the second diode 160 are electrically connected to form the first diode connection terminal 170, which serves as the first connection terminal 130. The second transient voltage suppressor unit 200 includes a second Zener diode 240, a third diode 250, and a fourth diode 260. The anode of the second Zener diode 240 serves as the second external terminal 220 of the second transient voltage suppressor unit 10. The cathode of the third diode 250 is electrically connected to the cathode of the second Zener diode 240, and the anode of the fourth diode 260 is electrically connected to the second external terminal 220. The anode of the third diode 250 and the cathode of the fourth diode 260 are electrically connected, serving as the second diode connection terminal 270, which in turn serves as the second connection terminal 230. The transient voltage suppressor 10 further includes a package frame 400, wherein the first transient voltage suppressor unit 100 and the second transient voltage suppressor unit 200 are disposed in the accommodating space formed by the package frame 400. The connection path 300 between the first connection terminal 130 and the second connection terminal 230 is electrically connected, and the connection path 300 is not located on the first substrate region 110 and the second substrate region 210.

[0054] In this embodiment, please refer to the specific transient current path. Figure 7B and Figure 7C .like Figure 7B As shown, connection path 300 electrically connects the first diode connection terminal 170 and the second diode connection terminal 270. When faced with a first-direction transient voltage 510 from the anode of the first Zener diode 140 (i.e., the first external terminal 120), the first-direction transient voltage 510 generates a first-direction current 511. The first-direction current 511 is received through the first external terminal 120 and flows to the second diode 160. After being rectified by the second diode 160, it flows from the first connection terminal 130 to connection path 300. After passing through connection path 300, it flows through the second connection terminal 230 to the third diode 250. After being rectified by the third diode 250, it flows to the second Zener diode 240, causing the second Zener diode 240 to achieve voltage regulation after Zener breakdown due to reverse bias. The first-direction current 511 is then conducted out from the second external terminal 220.

[0055] Reference Figure 7CConnection path 300 electrically connects the first diode connection terminal 170 and the second diode connection terminal 270. When faced with a second-direction transient voltage 520 from the anode of the second Zener diode 240 (i.e., the second external terminal 220), the second-direction transient voltage 520 generates a second-direction current 521. The second-direction current 521 is received through the second external terminal 220 and flows to the fourth diode 260. After being rectified by the fourth diode 260, it flows from the second connection terminal 230 to the connection path 300. After passing through the connection path 300, it flows through the first connection terminal 130 to the first diode 150. After being rectified by the first diode 150, it flows to the first Zener diode 140, causing the first Zener diode 140 to achieve voltage regulation after Zener collapse due to reverse bias. The second-direction current 521 is then conducted out from the first external terminal 120.

[0056] Reference Figure 8A This is a schematic diagram of another embodiment of the transient voltage suppressor 10 of the present invention. Figure 8A In the first transient voltage suppression unit 100, there are a first Zener diode 140, a first diode 150 and a second diode 160. The anode of the first Zener diode 140 serves as the first connection terminal 130 of the first transient voltage suppression unit 100. The cathode of the first diode 150 is electrically connected to the cathode of the first Zener diode 140. The anode of the second diode 160 is electrically connected to the first connection terminal 130. The anode of the first diode 150 and the cathode of the second diode 160 are electrically connected to form the first diode connection terminal 170. The first diode connection terminal 170 serves as the first external terminal 120. The second transient voltage suppression unit 200 includes a second Zener diode 240, a third diode 250, and a fourth diode 260. The anode of the second Zener diode 240 serves as the second connection terminal 230 of the second transient voltage suppression unit 200. The cathode of the third diode 250 is electrically connected to the cathode of the second Zener diode 240. The anode of the fourth diode 260 is electrically connected to the second connection terminal 230. The anode of the third diode 250 and the cathode of the fourth diode 260 are electrically connected, serving as the second diode connection terminal 270, which in turn serves as the second external terminal 220. The transient voltage suppressor 10 further includes a package frame 400, wherein the first transient voltage suppression unit 100 and the second transient voltage suppression unit 200 are disposed in the accommodating space formed by the package frame 400. Wherein, the first connection end 130 and the second connection end 230 are electrically connected to the packaging frame 400 to form a connection path 300. At this time, the packaging frame 400 is part of the connection path 300, and the connection path 300 is not located on the first substrate region 110 and the second substrate region 210.

[0057] In this embodiment, please refer to the specific transient current path. Figure 8B and Figure 8C .like Figure 8B As shown, when faced with a first-direction transient voltage 510 from the first diode connection terminal 170 (i.e., the first external terminal 120), the first-direction transient voltage 510 generates a first-direction current 511. The first-direction current 511 is received through the first external terminal 120 and flows to the first diode 150. After being rectified by the first diode 150, it flows from the first diode 150 to the first Zener diode 140, causing the first Zener diode 140 to achieve voltage regulation after Zener collapse due to reverse bias. The first-direction current 511 then flows from the first connection terminal 130 to the connection path 300. After passing through the connection path 300, it flows through the second connection terminal 230 to the fourth diode 260. After being rectified by the fourth diode 260, it is conducted out from the second external terminal 220.

[0058] Reference Figure 8C When faced with a transient voltage 520 in the second direction from the second diode connection terminal 270 (i.e., the second external terminal 220), the transient voltage 520 generates a second directional current 521. The second directional current 521 is received through the second external terminal 220 and flows to the third diode 250. After being rectified by the third diode 250, it flows from the third diode 250 to the second Zener diode 240, causing the second Zener diode 240 to achieve voltage regulation after Zener collapse due to reverse bias. The second directional current 521 then flows from the second connection terminal 230 to the connection path 300, and after passing through the connection path 300, it flows through the first connection terminal 130 to the second diode 160. After being rectified by the second diode 160, it is conducted out from the first external terminal 120.

[0059] The transient voltage suppressors of the various embodiments of the present invention can achieve bidirectional current discharge under different electrical connection conditions, and the series connection of two sets of transient voltage suppression units can also reduce the component capacitance. That is, the component function of the present invention is exactly the same as that of the traditional bidirectional transient voltage suppressor, but the manufacturing cost of the present invention is lower.

[0060] Reference Figure 9 The flowchart 900, which is a method for manufacturing a transient voltage suppressor according to the present invention, includes: forming a first transient voltage suppressor unit on a substrate, wherein the first transient voltage suppressor unit has a first external terminal and a first connection terminal; forming a second transient voltage suppressor unit on the substrate, wherein the second transient voltage suppressor unit has a second external terminal and a second connection terminal; performing a cutting process on the substrate to separate a first substrate region where the first transient voltage suppressor unit is disposed and a second substrate region where the second transient voltage suppressor unit is disposed; and setting a connection path for electrically connecting the first connection terminal and the second connection terminal.

[0061] Reference Figures 10A-10CThis is a schematic diagram illustrating the fabrication method of the transient voltage suppressor of the present invention, as shown below. Figure 10A As shown, a first substrate region 110 and a second substrate region 210 are formed on the substrate 1000; as Figure 10B As shown, a dicing process is performed on substrate 1000' to separate the first transient voltage suppression unit 100 in the first substrate region 110 and the second transient voltage suppression unit 200 in the second substrate region 210; as Figure 10C As shown, a connection path 300 is set up to electrically connect the first connection terminal 130 and the second connection terminal 230.

[0062] In one embodiment, the formation of the first transient voltage suppression unit 100 and the second transient voltage suppression unit 200 further includes a well process 1110 and a high-concentration doping process 1120 to generate the PN junction required for a diode. Furthermore, the well process 1110 and the high-concentration doping process 1120 of the transient voltage suppressor fabrication method of the present invention can form a diode or a Zener diode, such as... Figure 11 As shown, the first transient voltage suppression unit 100 includes a first diode 150, a second diode 160 and a first Zener diode 140, and the second transient voltage suppression unit 200 includes a third diode 250, a fourth diode 260 and a second Zener diode 240.

[0063] In one embodiment, during the cutting process, a cutting path 600 can be further generated between the first transient voltage suppression unit 100 and the second transient voltage suppression unit 200, such as... Figure 11 As shown, the cleavage 600 prevents the formation of parasitic components between the first transient voltage suppression unit 100 and the second transient voltage suppression unit 200. The cleavage 600 may be less than 20µm during the manufacturing process; in this case, it is preferable to use a solid molding material 610 to help prevent the formation of parasitic components between the first transient voltage suppression unit 100 and the second transient voltage suppression unit 200.

[0064] In one embodiment, reference is made to Figure 12This is a schematic diagram of the connection path during the fabrication of the transient voltage suppressor of the present invention. During the packaging stage, the first transient voltage suppression unit 100 and the second transient voltage suppression unit 200 are housed in the packaging frame 400. In this embodiment, the anode of the first diode 150 is electrically connected to the anode of the first Zener diode 140, the cathode of the first diode 150 is electrically connected to the anode of the second diode 160, and is defined as the first diode connection terminal 170. The cathode of the second diode 160 is electrically connected to the cathode of the first Zener diode 140, and the anode of the third diode 250 is electrically connected to the anode of the second Zener diode 140. The anode of diode 240 is electrically connected, the cathode of third diode 250 is electrically connected to the anode of fourth diode 260 and defined as the second diode connection terminal 270, and the cathode of fourth diode 260 is electrically connected to the cathode of second Zener diode 240; the anode of first Zener diode 140 is defined as the first connection terminal 130, the anode of second Zener diode 240 is defined as the second connection terminal 230, and the first connection terminal 130 of first transient voltage suppression unit 100 and the second connection terminal 230 of second transient voltage suppression unit 200 are electrically connected by connection path 300.

[0065] In one embodiment, reference is made to Figure 13 This is a schematic diagram of another connection path during the fabrication of the transient voltage suppressor of the present invention. In this embodiment, the first diode connection terminal 170 is defined as the first connection terminal 130, and the second diode connection terminal 270 is defined as the second connection terminal 230; the anode of the first Zener diode 140 is defined as the first external terminal 120, and the anode of the second Zener diode 240 is defined as the second external terminal 220. The first connection terminal 130 of the first transient voltage suppression unit 100 and the second connection terminal 230 of the second transient voltage suppression unit 200 are electrically connected by connection path 300.

[0066] In one embodiment, reference is made to Figure 14 This is another schematic diagram of the connection path during the fabrication of the transient voltage suppressor of the present invention. In this embodiment, the first diode connection terminal 170 is defined as the first external terminal 120, and the second diode connection terminal 270 is defined as the second external terminal 220; the anode of the first Zener diode 140 is defined as the first connection terminal 130, and the anode of the second Zener diode 240 is defined as the second connection terminal 230. At this time, the connection path 300 can be electrically connected from the first connection terminal 130 and the second connection terminal 230 to the package frame 400 respectively, and the connection path 300 is formed on the package frame 400.

[0067] In summary, the transient voltage suppressor according to the embodiments of the present invention can achieve bidirectional transient voltage suppression, and can be formed by electrically connecting two transient voltage suppression units. Furthermore, the transient voltage suppressor according to the embodiments of the present invention can be used as a transient voltage suppression component in power supplies, AC line converters, electrical surge detectors, and electrostatic discharge detectors, and its applications are not limited to the examples specifically listed herein.

[0068] The foregoing description comprises only some preferred embodiments of the present invention. The proportions and relative proportions of the components or parts presented in the drawings may be exaggerated or varied for clarity or convenience of explanation, and those skilled in the art should understand that they are not intended to be specific dimensional limitations. Furthermore, it should be noted that various changes and modifications can be made to the present invention without departing from its spirit and principles. Those skilled in the art should understand that the present invention is defined by the appended claims, and that various possible substitutions, combinations, modifications, and uses, etc., do not exceed the scope of the present invention as defined by the appended claims, provided they conform to the intent of the present invention.

Claims

1. A transient voltage suppressor characterized by The transient voltage suppressor further comprises a package frame; wherein the first transient voltage suppression unit and the second transient voltage suppression unit are disposed in a receiving space formed by the package frame. The package frame is made of a conductor material, the first connecting end and the second connecting end are electrically connected to the package frame respectively, and the connecting path is formed on the package frame. The first transient voltage suppression unit comprises a Zener diode, wherein the first external end is defined as an anode or a cathode of the Zener diode, and the first connecting end is defined as the other pole. The first transient voltage suppression unit comprises a bipolar junction transistor, wherein the first external end is defined as a collector or an emitter of the bipolar junction transistor, and the first connecting end is defined as the other pole.

2. The transient voltage suppressor of claim 1, wherein, The base and the emitter of the bipolar junction transistor are connected together.

3. The transient voltage suppressor of claim 2, wherein, The first transient voltage suppression unit comprises a Zener diode, a first diode and a second diode; 4. The transient voltage suppressor of claim 1, wherein, wherein the cathode of the first diode is electrically connected to the cathode of the Zener diode, and the anode of the second diode is electrically connected to the anode of the Zener diode; 5. The transient voltage suppressor of claim 1, wherein, wherein a diode connecting end is electrically connected to the cathode of the second diode and the anode of the first diode, the first external end is defined as the anode of the Zener diode or the diode connecting end, and the first connecting end is defined as the other pole.

6. The transient voltage suppressor of claim 5, wherein, There is a cutting path between the first substrate region and the second substrate region.

7. The transient voltage suppressor of claim 1, wherein, A solid encapsulation material is disposed in the cutting path. The connecting path is disposed on the first connecting end and the second connecting end through a metal wire bonding process. The transient voltage suppressor further comprises a package frame; wherein the first transient voltage suppression unit and the second transient voltage suppression unit are disposed in a receiving space formed by the package frame.

8. The transient voltage suppressor of claim 1, wherein, The package frame is made of a conductor material, the first connecting end and the second connecting end are electrically connected to the package frame respectively, and the connecting path is formed on the package frame.

9. The transient voltage suppressor of claim 8, wherein, The first transient voltage suppression unit comprises a Zener diode, wherein the first external end is defined as an anode or a cathode of the Zener diode, and the first connecting end is defined as the other pole.

10. The transient voltage suppressor of claim 1, wherein, The first transient voltage suppression unit comprises a bipolar junction transistor, wherein the first external end is defined as a collector or an emitter of the bipolar junction transistor, and the first connecting end is defined as the other pole.

11. A method of fabricating a transient voltage suppressor, the method comprising: The base and the emitter of the bipolar junction transistor are connected together. The first transient voltage suppression unit comprises a Zener diode, a first diode and a second diode; wherein the cathode of the first diode is electrically connected to the cathode of the Zener diode, and the anode of the second diode is electrically connected to the anode of the Zener diode; wherein a diode connecting end is electrically connected to the cathode of the second diode and the anode of the first diode, the first external end is defined as the anode of the Zener diode or the diode connecting end, and the first connecting end is defined as the other pole.

12. The method of manufacturing according to claim 11, wherein, There is a cutting path between the first substrate region and the second substrate region.

13. The method of manufacturing according to claim 12, wherein, A solid encapsulation material is disposed in the cutting path.

14. The method of making of claim 11, wherein The connecting path is disposed on the first connecting end and the second connecting end through a metal wire bonding process.

15. The method of manufacturing according to claim 14, wherein The transient voltage suppressor further comprises a package frame; wherein the first transient voltage suppression unit and the second transient voltage suppression unit are disposed in a receiving space formed by the package frame. The package frame is made of a conductor material, the first connecting end and the second connecting end are electrically connected to the package frame respectively, and the connecting path is formed on the package frame. The first transient voltage suppression unit comprises a Zener diode, wherein the first external end is defined as an anode or a cathode of the Zener diode, and the first connecting end is defined as the other pole. The first transient voltage suppression unit comprises a bipolar junction transistor, wherein the first external end is defined as a collector or an emitter of the bipolar junction transistor, and the first connecting end is defined as the other pole. The base and the emitter of the bipolar junction transistor are connected together. The first transient voltage suppression unit comprises a Zener diode, a first diode and a second diode; wherein the cathode of the first diode is electrically connected to the cathode of the Zener diode, and the anode of the second diode is electrically connected to the anode of the Zener diode; wherein a diode connecting end is electrically connected to the cathode of the second diode and the anode of the first diode, the first external end is defined as the anode of the Zener diode or the diode connecting end, and the first connecting end is defined as the other pole.

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