Laminated OLED device
By dividing the charge generation layer into a multi-layer structure and adjusting its thickness and doping ratio, the problems of lateral crosstalk and visible light absorption in OLED devices were solved, thereby improving device efficiency and lifetime.
Patent Information
- Application Number
- CN202411110982.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-13
- Publication Date
- 2026-02-13
AI Technical Summary
In existing OLED devices, the choice of materials for P-CGL and N-CGL leads to lateral crosstalk and visible light absorption issues, affecting device efficiency and lifespan.
The charge generation layer is divided into a multi-layer structure. The thickness and doping ratio of each layer are adjusted. Hole generation layer and electron generation layer are made of the same material. The metal stabilizing layer is eliminated. The light color value is adjusted through an optical adjustment layer.
It improves the efficiency and lifespan of OLED devices, reduces lateral crosstalk and visible light absorption, and extends the lifespan of the devices.
Smart Images
Figure CN121531906A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the field of OLED devices, in particular to a stacked OLED device. BACKGROUND
[0002] OLED devices have been widely used in high-performance display field in recent years, especially the increasing demand for notebook computers and vehicle screens, which requires long life and high HDR for OLED screens, and therefore the tandem OLED device is favored by the market.
[0003] The key technology of the tandem device structure is the charge generation layer (CGL), which provides electrons and holes for a single electron light emitting element. The CGL generally includes N-CGL and P-CGL, which are used to generate electrons and holes respectively. The CGL must have a low work function to reduce the operating voltage and power consumption, and have a good LUMO and HUMO energy level matching with the adjacent charge transport layer to prevent charge accumulation and cause voltage drop at the P-N interface. In order to stabilize the P-N interface carriers, a metal stabilizing layer is generally provided between the N-CGL and the P-CGL.
[0004] However, the P-CGL generally dopes a conductive organic material in the hole transport material, so when the doping reaches a certain proportion, it is easy to cause lateral crosstalk under the action of the electric field; in addition, the doped material in the P-CGL has absorption to visible light, especially blue light, and the metal stabilizing layer further prevents light extraction, resulting in reduced device efficiency; for the N-CGL, the material is generally a low work function metal or alkali metal doped in the electron transport material, which often leads to mismatch of P-N carrier transport rate, resulting in high device operating voltage and poor life.
[0005] In view of the above defects, the present application provides a stacked OLED device. SUMMARY
[0006] The present application aims to provide a stacked OLED device, improve the structure of the stacked OLED device, improve its use effect, and increase the service life.
[0007] The present application solves the above technical problems by the following technical solutions:
[0008] The present application provides a stacked OLED device, comprising an anode layer, wherein one side of the anode layer is provided with a first light emitting layer, a charge generation layer, a second light emitting layer, a cathode layer and an optical extraction layer in sequence along the direction away from the anode layer.
[0009] The first light-emitting layer is sequentially provided with a first hole transport layer, a first electron blocking layer, a first pixel light-emitting layer, a first hole blocking layer and a first electron transport layer in the direction away from the anode layer, the second light-emitting layer is sequentially provided with a second hole transport layer, a second electron blocking layer, a second pixel light-emitting layer, a second hole blocking layer and a second electron transport layer in the direction away from the anode layer, and an optical adjustment layer is arranged between the second electron blocking layer and the second pixel light-emitting layer.
[0010] The charge generation layer is sequentially provided with an electron generation layer, a first hole generation layer and a second hole generation layer in the direction away from the anode layer; the charge generation layer is doped with an organic material having strong electron absorption capacity, and the doping proportion of the first hole generation layer is higher than that of the second hole generation layer.
[0011] In the technical solution, the charge generation layer is divided into multiple thin layers, the thickness and doping proportion of each layer in the charge generation layer are adjusted, the carrier rate between adjacent layers is matched, the obvious voltage drop at the interface between the adjacent two layers caused by charge accumulation is prevented, and the service life of the OLED device is prolonged; no metal stabilizing layer is arranged in the charge generation layer, the low transmittance in the visible light band is avoided to hinder light extraction, and thus the efficiency of the OLED device is improved.
[0012] Preferably, the doping proportion of the first hole generation layer and the doping proportion of the electron generation layer are both 5-10%.
[0013] In the technical solution, the doping proportion is adjusted to match the carrier rate at the interface between the first hole generation layer and the electron generation layer, the obvious voltage drop at the interface caused by charge accumulation is prevented, and the service life of the device is reduced.
[0014] Preferably, the doping proportion of the second hole generation layer is 0.5-1%.
[0015] In the technical solution, the doping proportion is adjusted to quickly transfer the carriers in the second hole generation layer and reduce the conductivity, thereby reducing the horizontal crosstalk in the OLED device.
[0016] Preferably, the materials of the first hole generation layer and the second hole generation layer are the same as those of the first hole transport layer and the second hole transport layer and are doped with HAT-CN.
[0017] In the technical solution, the hole generation layer uses the same material as the hole transport layer, the types of materials used in the production process are reduced, and the carrier rate is adjusted by doping HAT-CN.
[0018] Preferably, the material of the electron generation layer is the same material as the first electron transport layer and the second electron transport layer, which is doped with alkali metal, and the electron generation layer contains arylamine compounds with the first electron transport layer and the second electron transport layer.
[0019] In the technical solution, the electron generation layer uses the same material as the electron transport layer, reducing the types of materials used in the production process, and adjusting the carrier rate by doping alkali metal.
[0020] Preferably, the thickness of the electron generation layer and the second hole generation layer is greater than the thickness of the first hole generation layer.
[0021] In the technical solution, the first hole generation layer replaces the metal stabilizing layer, and the carrier rate is coordinated by adjusting the thickness, while reducing the absorption of visible light and avoiding reducing the device efficiency.
[0022] Preferably, the thickness of the second hole generation layer is
[0023] In the technical solution, the second hole generation layer is set to an appropriate thickness to generate sufficient carriers and avoid affecting the carrier moving rate.
[0024] Preferably, the thickness of the first hole generation layer is
[0025] In the technical solution, the first hole generation layer is set to an appropriate thickness to coordinate the carrier moving rate between adjacent film layers and avoid the accumulation of charges at the interface, resulting in a pressure drop.
[0026] Preferably, the thickness of the electron generation layer is
[0027] In the technical solution, the electron generation layer is set to an appropriate thickness to generate sufficient carriers and avoid affecting the carrier moving rate.
[0028] Preferably, the first pixel light-emitting layer includes a first blue pixel light-emitting layer, a first green pixel light-emitting layer, and a first red pixel light-emitting layer, and the second pixel light-emitting layer includes a second blue pixel light-emitting layer, a second green pixel light-emitting layer, and a second red pixel light-emitting layer; the optical adjustment layer includes a green pixel light-emitting adjustment layer corresponding to the first green pixel light-emitting layer and the second green pixel light-emitting layer, and a red pixel light-emitting adjustment layer corresponding to the first red pixel light-emitting layer and the second red pixel light-emitting layer.
[0029] In the technical solution, the optical adjustment layer adjusts the visible light color value after passing through the charge generation layer to keep it basically consistent with the set value, improving the display quality.
[0030] On the basis of common knowledge in the art, the above-mentioned preferred conditions can be combined arbitrarily, thereby obtaining preferred examples of the present application.
[0031] The positive progress effect of the present application is that:
[0032] The stacked OLED device of the present application divides the charge generation layer into multiple thin layers, and by adjusting the thickness and doping ratio of each layer in the charge generation layer, the carrier velocity of each adjacent layer can be matched, preventing the accumulation of charges from causing a significant voltage drop at the interface between the two adjacent layers, thereby prolonging the service life of the OLED device; the charge generation layer does not have a metal stabilizing layer, which avoids the low transmittance in the visible light range from hindering light extraction, thereby improving the efficiency of the OLED device.
[0033] For a more detailed understanding of the features and technical contents of the present application, please refer to the following detailed description and drawings of the present application. However, the detailed description and drawings herein are only used to illustrate the present application, and do not limit the scope of the claims of the present application in any way. BRIEF DESCRIPTION OF DRAWINGS
[0034] The above-mentioned and other features and advantages of the present application will become more apparent by describing in detail example embodiments thereof with reference to the attached drawings.
[0035] Figure 1 A schematic diagram of the stacked OLED device of an embodiment of the present application.
[0036] REFERENCE NUMERALS
[0037] 1 anode layer
[0038] 100 first light-emitting layer
[0039] 21 first hole transport layer
[0040] 31 first electron blocking layer
[0041] 41 first pixel light-emitting layer
[0042] 411 first blue pixel light-emitting layer
[0043] 421 first green pixel light-emitting layer
[0044] 431 first red pixel light-emitting layer
[0045] 51 first hole blocking layer
[0046] 61 first electron transport layer
[0047] 7 charge generation layer
[0048] 71 electron generation layer
[0049] 72 first hole generation layer
[0050] 73 second hole generation layer
[0051] 200 second light emitting layer
[0052] 22 second hole transport layer
[0053] 32 second electron blocking layer
[0054] 42 second pixel light emitting layer
[0055] 412 second blue pixel light emitting layer
[0056] 422 second green pixel light emitting layer
[0057] 432 second red pixel light emitting layer
[0058] 52 second hole blocking layer
[0059] 62 second electron transport layer
[0060] 8 optical adjustment layer
[0061] 81 green pixel optical adjustment layer
[0062] 82 red pixel optical adjustment layer
[0063] 9 cathode layer
[0064] 10 light extraction layer DETAILED DESCRIPTION
[0065] The present application is herein described, by way of example only, with the
[0066] With reference to the drawings, embodiments of the present application are explained in detail. The present application can be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Please refer to the following description to fully understand the scope of the present application.
[0067] In the present specification, the expressions "one embodiment", "some embodiments", "exemplary", "detailed example", or "some examples" etc. mean that the particular feature, structure, material, or characteristic being referred to is included in at least one embodiment or example of the present application. Moreover, such expressions do not necessarily refer to the same embodiment or example. Furthermore, such expressions do not necessarily refer to any one or the same embodiment or example. In addition, if a specific feature, structure, material, or characteristic is referred to in a certain embodiment or example, it is understood that such feature, structure, material or characteristic can be combined with one or more other features, structures, materials or characteristics of the same or different embodiments or examples, but are not limited thereto.
[0068] Further, the terms "first", "second", etc. are used herein only to describe various elements, and do not imply or suggest relative importance or a number of the elements indicated. Thus, the features defined with "first", "second" can explicitly or implicitly include at least one of the features. In the present specification, the meaning of "a plurality of" is two or more, unless specifically limited otherwise.
[0069] For the purpose of clear explanation of the present application, the devices irrelevant to the explanation are omitted, and the same reference numerals are assigned to the same or similar constituent elements throughout the specification.
[0070] In the present specification, when it is said that a certain device is "connected" to another device, this includes not only the case of "direct connection", but also the case of "indirect connection" in which other elements are interposed therebetween. In addition, when it is said that a certain device "includes" a certain constituent element, other constituent elements are not excluded unless specifically stated to the contrary, but it means that other constituent elements can also be included.
[0071] When it is said that a certain device is "on" another device, this can be directly on the other device, but can also be accompanied by other devices therebetween. When it is said that a certain device is "directly" on another device, there are no other devices therebetween.
[0072] Although the terms first, second, etc. can be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first interface and a second interface, etc. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises", "comprising", "includes" and / or "including", when used herein, specify the presence of stated features, steps, operations, elements, components, items, and / or groups thereof, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, items, and / or groups thereof. As used herein, the terms "or" and "and / or" are construed to be inclusive, or mean any one or any combination of the listed items. Thus, "A, B or C" or "A, B and / or C" means any of the following: A; B; C; A and B; A and C; B and C; A, B and C. Exceptions to this definition will only be present when the combination of elements, functions, steps or actions are inherently mutually exclusive based on a context.
[0073] The professional terms used herein are only used to refer to specific embodiments, and are not intended to limit the present application. The singular form used herein, unless the statement explicitly indicates the opposite meaning, also includes the plural form. The meaning of "include" used in the specification is to specify the particular characteristics, regions, integers, steps, operations, elements and / or components, and is not to exclude the existence or addition of other characteristics, regions, integers, steps, operations, elements and / or components.
[0074] Although not differently defined, all terms used herein including technical and scientific terms have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. Terms defined in commonly used dictionaries are to be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure, and should not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
[0075] As Figure 1As shown, the stacked OLED device in the embodiment includes an anode layer 1, and a first light-emitting layer 100, a charge generation layer 7, a second light-emitting layer 200, a cathode layer 9 and an optical extraction layer 10 are sequentially arranged on one side of the anode layer 1 in a direction away from the anode layer 1; the first light-emitting layer 100 includes a first hole transport layer 21, a first electron blocking layer 31, a first pixel light-emitting layer 41, a first hole blocking layer 51 and a first electron transport layer 61 which are sequentially arranged in a direction away from the anode layer 1, and the second light-emitting layer 200 includes a second hole transport layer 22, a second electron blocking layer 32, a second pixel light-emitting layer 42, a second hole blocking layer 52 and a second electron transport layer 62 which are sequentially arranged in a direction away from the anode layer 1, and the second electron blocking layer 32 and the second pixel light-emitting layer 42 are provided with an optical adjustment layer 8; the charge generation layer 7 includes an electron generation layer 71, a first hole generation layer 72 and a second hole generation layer 73 which are sequentially arranged in a direction away from the anode layer 1; the charge generation layer 7 is doped with an organic material having strong electron absorption capacity, and the doping proportion of the first hole generation layer 72 is higher than that of the second hole generation layer 73. The charge generation layer 7 is divided into multiple thin layers, and the thickness and doping proportion of each layer in the charge generation layer 7 are adjusted to match the carrier rate between adjacent layers, prevent the accumulation of charges from causing a significant voltage drop at the interface between the two adjacent layers, and thus prolong the service life of the OLED device; and the charge generation layer 7 is not provided with a metal stabilizing layer, which avoids the low transmittance of the visible light band from hindering light extraction, and thus improves the efficiency of the OLED device.
[0076] The doping proportion of the first hole generation layer 72 and the doping proportion of the electron generation layer 71 are both 5%. The doping proportion is adjusted to match the carrier rate at the interface between the first hole generation layer 72 and the electron generation layer 71, prevent the accumulation of charges from causing a significant voltage drop at the interface, and thus reduce the service life of the device.
[0077] In other embodiments, the doping proportion of the first hole generation layer 72 and the doping proportion of the electron generation layer 71 can also be other values within the range of 5-10%, for example, 7%, and the doping proportion of the first hole generation layer 72 and the doping proportion of the electron generation layer 71 can also be different.
[0078] In the embodiment, the doping proportion of the second hole generation layer 73 is 1%. The doping proportion is adjusted to quickly transfer the carriers in the second hole generation layer 73 and reduce the conductivity, and thus reduce the lateral crosstalk in the OLED device.
[0079] In other embodiments, the doping proportion of the second hole generation layer 73 can also be other values within the range of 0.5-1%, for example, 0.8%.
[0080] In this embodiment, the material of the first hole generation layer 72 and the second hole generation layer 73 is the same material as the first hole transport layer 21 and the second hole transport layer 22, and is doped with HAT-CN. The hole generation layer uses the same material as the hole transport layer, reducing the types of materials used in the production process, and the carrier rate is adjusted by doping HAT-CN.
[0081] In other embodiments, the first hole transport layer 21 and the second hole transport layer 22 can also be doped with other organic materials with strong electron absorption capacity according to product requirements.
[0082] The material of the electron generation layer 71 is the same material as the first electron transport layer 61 and the second electron transport layer 62, and is doped with alkali metal. The electron generation layer 71 and the first electron transport layer 61 and the second electron transport layer 62 both contain arylamine compounds. The electron generation layer 71 uses the same material as the electron transport layer, reducing the types of materials used in the production process, and the carrier rate is adjusted by doping alkali metal.
[0083] The thickness of the electron generation layer 71 and the second hole generation layer 73 is greater than the thickness of the first hole generation layer 72. The first hole generation layer 72 replaces the metal stabilization layer, and the carrier rate is coordinated by adjusting the thickness, while reducing the absorption of visible light to avoid reducing the device efficiency.
[0084] The thickness of the second hole generation layer 73 is The second hole generation layer 73 is set to an appropriate thickness to generate sufficient carriers and avoid affecting the carrier mobility rate.
[0085] In other embodiments, the thickness of the second hole generation layer 73 can also be other values within the range, such as
[0086] In this embodiment, the thickness of the first hole generation layer 72 is The first hole generation layer 72 is set to an appropriate thickness to coordinate the carrier mobility rate between adjacent film layers and avoid the accumulation of charges at the interface, resulting in a pressure drop.
[0087] In other embodiments, the thickness of the first hole generation layer 72 can also be other values within the range, such as
[0088] In this embodiment, the thickness of the electron generation layer 71 is The electron generation layer is set to an appropriate thickness to generate sufficient carriers and avoid affecting the carrier mobility rate.
[0089] In other embodiments, the thickness of the electron generation layer 71 can also be other values within the range, for example
[0090] In the embodiment, the first pixel light-emitting layer 41 comprises a first blue pixel light-emitting layer 411, a first green pixel light-emitting layer 421 and a first red pixel light-emitting layer 431, the second pixel light-emitting layer 42 comprises a second blue pixel light-emitting layer 412, a second green pixel light-emitting layer 422 and a second red pixel light-emitting layer 432; the optical adjustment layer 8 comprises a green pixel light-emitting adjustment layer 81 corresponding to the first green pixel light-emitting layer 421 and the second green pixel light-emitting layer 422, and a red pixel light-emitting adjustment layer 82 corresponding to the first red pixel light-emitting layer 431 and the second red pixel light-emitting layer 432. The optical adjustment layer 8 adjusts the color value of the visible light after the charge generation layer 7, so that it remains basically consistent with the set value, and improves the display quality.
[0091] In conclusion, the present application aims to provide a kind of laminated OLED device, improve the structure of laminated OLED device, improve its use effect, increase service life.
[0092] The above is further detailed description of the present application in combination with specific preferred embodiments, and cannot be considered as the specific implementation of the present application is limited to these descriptions. For ordinary skilled in the art to which the present application belongs, without departing from the concept of the present application, a number of simple deductions or substitutions can also be made, which should be considered as belonging to the protection scope of the present application.
Claims
1. A stacked OLED device, characterized in that, The anode layer (1) is sequentially provided with a first light-emitting layer (100), a charge generation layer (7), a second light-emitting layer (200), a cathode layer (9) and an optical extraction layer (10) in sequence along a direction away from the anode layer (1); The first light-emitting layer (100) is sequentially provided with a first hole transport layer (21), a first electron blocking layer (31), a first pixel light-emitting layer (41), a first hole blocking layer (51) and a first electron transport layer (61) in sequence along a direction away from the anode layer (1), and the second light-emitting layer (200) is sequentially provided with a second hole transport layer (22), a second electron blocking layer (32), a second pixel light-emitting layer (42), a second hole blocking layer (52) and a second electron transport layer (62) in sequence along a direction away from the anode layer (1), and an optical adjustment layer (8) is arranged between the second electron blocking layer (32) and the second pixel light-emitting layer (42). The charge generation layer (7) is sequentially provided with an electron generation layer (71), a first hole generation layer (72) and a second hole generation layer (73) in sequence along a direction away from the anode layer (1); the charge generation layer (7) is doped with an organic material having strong electron absorption capacity, and the doping proportion of the first hole generation layer (72) is higher than that of the second hole generation layer (73).
2. The OLED device of claim 1, wherein, The doping proportion of the first hole generation layer (72) and the doping proportion of the electron generation layer (71) are both 5-10%.
3. The OLED device of claim 2, wherein the first and second layers of the first electrode are formed of the same material. The doping proportion of the second hole generation layer (73) is 0.5-1%.
4. The OLED device of claim 1, wherein, The materials of the first hole generation layer (72) and the second hole generation layer (73) are the same as those of the first hole transport layer (21) and the second hole transport layer (22) and are doped with HAT-CN.
5. The OLED device of claim 1, wherein, The material of the electron generation layer (71) is the same as that of the first electron transport layer (61) and the second electron transport layer (62) and is doped with alkali metal, and the electron generation layer (71) and the first electron transport layer (61) and the second electron transport layer (62) all contain arylamine compounds.
6. The OLED device of claim 1, wherein, The thicknesses of the electron generation layer (71) and the second hole generation layer (73) are both greater than the thickness of the first hole generation layer (72).
7. The OLED device of claim 6, wherein the first and second layers of the first electrode are formed of the same material. The thickness of the second hole generation layer (73) is 8. The OLED device of claim 6, wherein the first and second layers of the first electrode are formed of the same material. The thickness of the first hole generation layer (72) is 9. The OLED device of claim 1, wherein, The thickness of the electron-generating layer (71) is 10. The OLED device of claim 1, wherein, The first pixel light-emitting layer (41) includes a first blue pixel light-emitting layer (411), a first green pixel light-emitting layer (421) and a first red pixel light-emitting layer (431), the second pixel light-emitting layer (42) includes a second blue pixel light-emitting layer (412), a second green pixel light-emitting layer (422) and a second red pixel light-emitting layer (432), the optical adjustment layer (8) includes a green pixel light-emitting adjustment layer (81) corresponding to the first green pixel light-emitting layer (421) and the second green pixel light-emitting layer (422), and a red pixel light-emitting adjustment layer (82) corresponding to the first red pixel light-emitting layer (431) and the second red pixel light-emitting layer (432).