Electronic device

Abstract

The invention provides an electronic device which comprises an electronic unit and a circuit structure. The circuit structure is electrically connected with the electronic unit, the circuit structure comprises a first conducting layer, a first insulating layer and a first heat dissipation piece, the first insulating layer is arranged between the first conducting layer and the electronic unit, and the first heat dissipation piece is in contact with the first conducting layer. The heat conduction coefficient of the first heat dissipation piece is larger than that of the first insulation layer and smaller than that of the first conductive layer.

Description

TECHNICAL FIELD

[0001] The present application relates to electronic devices, and more particularly to electronic devices with improved heat dissipation performance. BACKGROUND

[0002] Packaging technology can improve the integration density of electronic components (e.g., transistors, diodes, resistors, capacitors, etc.) in a given area, and has been widely used in the production of electronic devices in recent years. As the packaging size of semiconductors becomes smaller and smaller, the reliability requirements for chip manufacturing and packaging technology are also becoming higher and higher.

[0003] 2.5D or 3D advanced packaging technology using three-dimensional packaging stacks chips and then packages them on a substrate, thereby reducing the area occupied by the chips, reducing costs, and reducing the power consumption of the driving chips. Such electronic devices usually use a redistribution layer (RDL) to redistribute the lines or increase the fan-out area of the lines, such as changing the contact position of an integrated circuit (IC) by a metal wiring process and a bumping process, so that the integrated circuit can be applied to different component modules.

[0004] However, when multiple modules or systems are simultaneously bonded on the same redistribution layer substrate, the heat generated by each module or system is easily accumulated in large quantities on the substrate, which affects the performance of the electronic device. In order to further improve the performance of the electronic device, developing a structure design that can improve the heat dissipation performance of the electronic device is still one of the research topics that the industry is committed to. SUMMARY

[0005] According to some embodiments of the present application, an electronic device is provided, which includes an electronic unit and a circuit structure. The circuit structure is electrically connected to the electronic unit, and the circuit structure includes a first conductive layer, a first insulating layer, and a first heat dissipation member. The first insulating layer is disposed between the first conductive layer and the electronic unit, and the first heat dissipation member contacts the first conductive layer. The thermal conductivity of the first heat dissipation member is greater than the thermal conductivity of the first insulating layer and less than the thermal conductivity of the first conductive layer. BRIEF DESCRIPTION OF DRAWINGS

[0006] In order to make the above-mentioned objects, features and advantages of the present application more apparent, the specific embodiments of the present application will be described in detail below with reference to the accompanying drawings, in which:

[0007] Figure 1 FIG. 1 shows a cross-sectional structure of an electronic device according to some embodiments of the present application;

[0008] Figure 2 FIG. 2 shows a cross-sectional structure of an electronic device according to some embodiments of the present application;

[0009] FIG. 3 shows a cross-sectional structure of an electronic device according to some embodiments of the present application;Figure 3 FIG. 10A shows a schematic diagram of a cross-sectional structure of an electronic device according to some embodiments of the present application;

[0010] Figure 4 FIG. 10B shows a schematic diagram of a cross-sectional structure of an electronic device according to some embodiments of the present application;

[0011] Figure 5 FIG. 10C shows a schematic diagram of a cross-sectional structure of an electronic device according to some embodiments of the present application;

[0012] Figure 6 FIG. 10D shows a schematic diagram of a cross-sectional structure of an electronic device according to some embodiments of the present application;

[0013] Figure 7 FIG. 10E shows a schematic diagram of a cross-sectional structure of an electronic device according to some embodiments of the present application;

[0014] Figure 8 FIG. 10F shows a schematic diagram of a cross-sectional structure of an electronic device according to some embodiments of the present application.

[0015] Reference Signs:

[0016] 10A, 10B, 10C, 10D, 10E, 10F, 10G, 10H: electronic device

[0017] 100: chip

[0018] 101: substrate

[0019] 101V: via hole

[0020] 102: conductive pad

[0021] 103: connection component

[0022] 104: insulating layer

[0023] 106: insulating layer

[0024] 200a, 200b, 200c: insulating layer

[0025] 202a, 202b, 202c, 202d: conductive layer

[0026] 201: substrate

[0027] 201V: via hole

[0028] 203: conductive component

[0029] 205: connection component

[0030] 300A, 300A', 300A-1, 300A-2: first heat dissipation member

[0031] 300B: second heat dissipation member

[0032] 300C: third heat dissipation member

[0033] 400: encapsulation layer

[0034] 402: connection assembly

[0035] 403: encapsulation layer

[0036] 404: buffer layer

[0037] 500: electronic assembly

[0038] 501: substrate

[0039] 501V: via

[0040] 502: insulation layer

[0041] 503: contact pad

[0042] 505: conductive assembly

[0043] 507: conductive pad

[0044] 509: connection assembly

[0045] BP: connection assembly

[0046] CS: circuit structure

[0047] EU: electronic unit

[0048] FN: fin structure DETAILED DESCRIPTION

[0049] The electronic device of the embodiments of the present application is described in detail as follows. It should be understood that the following description provides many different embodiments, or examples, for implementing different aspects, embodiments and / or configurations of the present application. Each of the various embodiments can provide for a single implementation of the present application or a combination of various implementations of the present application. Some embodiments of the present application can be described in terms of components that are arranged to perform functions. It should be understood that such descriptive terms are merely descriptive of possible implementations and do not limit the scope of the present application to any one implementation. Furthermore, the described embodiments include other aspects, embodiments and / or configurations. In addition, each of the components described herein can be used independently of at least one other components and / or can be used in combination with at least one other component. In addition, the components can be used and / or implemented in hardware, software or both hardware and software.

[0050] It should be understood that the use of relative terms, such as "lower", "bottom", "upper" or "top", can be used herein for the purpose of describing a relative position of one component to another component. It will be understood that the depicted component on the "lower" side can become the component on the "upper" side, and vice versa, when the device is turned over. The embodiments of the present application can be combined with the device as shown in the figures.Figure 1 It is to be understood that the drawings of the application are to be read in conjunction with the detailed description. In the drawings, like reference numerals refer to like elements throughout the several views. It is to be understood that the drawings are not necessarily to scale, and that, unless otherwise indicated, the use of certain elements or components in the drawings is not intended to convey a limitation as to the scope of the application.

[0051] Furthermore, when a first material layer is said to be on or over a second material layer, it can include the case where the first material layer is in direct contact with the second material layer or the case where there can be one or more other material layers between the first material layer and the second material layer. However, if the first material layer is directly on the second material layer, it means the case where the first material layer is in direct contact with the second material layer.

[0052] Furthermore, it is to be understood that the use of certain terms or words, such as "first", "second", etc., in the specification and claims is not to be construed as limiting the scope of the application. Rather, such terms or words are used to identify or distinguish one component from another. For example, a first component can be a component that is named first in the specification, or a component that is named second in the specification. The use of such terms or words in the specification and claims is not intended to limit the scope of the application to only those components that are named first or second in the specification.

[0053] In some embodiments of the application, the terms such as "connected", "interconnected", etc. can mean that two structures are in direct contact, or can mean that two structures are not in direct contact, with other structures being disposed between the two structures. Also, the terms such as "connected", "interconnected", etc. can include the case where both structures are movable, or the case where both structures are fixed. Furthermore, the terms "electrically connected" or "coupled" include any direct and indirect electrical connection means.

[0054] In the present document, the terms "about", "substantially", "approximately" generally mean within 10% or within 5% or within 3% or within 2% or within 1% or within 0.5% of a given value or range. The term "ranging from a first value to a second value" means that the range includes the first value, the second value, and any other values therebetween. Furthermore, any two values or directions used to compare can have some error. If a first value is equal to a second value, it is implied that there can be about 10% error between the first value and the second value; if a first direction is perpendicular to a second direction, the angle between the first direction and the second direction can range from 80 degrees to 100 degrees; if a first direction is parallel to a second direction, the angle between the first direction and the second direction can range from 0 degrees to 10 degrees.

[0055] According to embodiments of the present application, the thickness, length and width can be measured by optical microscope (OM), and the thickness or width can be measured by cross-sectional image of electron microscope, but not limited thereto. The surface roughness can be observed by scanning electron microscope (SEM), transmission electron microscope (TEM) or the like under the same magnification, and the surface roughness can be compared by unit length (e.g. 10 μm). The suitable magnification means that at least one surface can be observed by at least 10 peaks of the roughness or average roughness under the field of view of the magnification.

[0056] It should be understood that the following examples can be substituted, recombined, combined with features of different embodiments to complete other embodiments without departing from the spirit of the present application. The features of different embodiments can be combined and used as long as they do not conflict with each other or the spirit of the present application.

[0057] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be understood that such terms as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure, and will not be interpreted in an idealized or overly formal sense unless expressly so defined in the embodiments of the present application.

[0058] According to embodiments of the present application, the electronic device provided includes a specific heat dissipation component, which can improve the heat dissipation effect of the electronic device (e.g. electronic device with a re-distribution layer structure), thereby improving the reliability and performance of the electronic device.

[0059] According to embodiments of the present disclosure, the electronic device can be applied to a power module, a semiconductor package device, a display apparatus, a light emitting device, a backlight device, an antenna device, a touch device, a sensing device, a wearable device, a vehicle device, a battery device, or a tiled device, but is not limited thereto. The electronic device can be a foldable or flexible electronic device. The display apparatus can be a non-self-emissive display apparatus or a self-emissive display apparatus. The antenna device can be a liquid crystal type antenna device or a non-liquid crystal type antenna device. The sensing device can be a sensing device that senses capacitance, light, heat energy, or ultrasound, but is not limited thereto. Furthermore, the electronic device can include, for example, liquid crystals, quantum dots (QD), fluorescence, phosphor, other suitable materials, or combinations thereof. The electronic device can include an electronic unit, and the electronic unit can include passive components and active components, such as a capacitor, a resistor, an inductor, a diode, a transistor, etc. The diode can include a light emitting diode or a photodiode. The light emitting diode can include, for example, an organic light emitting diode (OLED), a mini LED, a micro LED, or a quantum dot LED, but is not limited thereto. According to some embodiments, the electronic device can include a panel and / or a backlight module, and the panel can include, for example, a liquid crystal panel or other self-emissive panel, but is not limited thereto. The tiled device can be, for example, a display tiled device or an antenna tiled device, but is not limited thereto. It should be understood that the electronic device can be any arrangement combination of the foregoing, but is not limited thereto.

[0060] According to embodiments of the present disclosure, the electronic device can be applied to a package structure, and the package structure can include a system on chip (SoC), a system in package (SiP), a chip on wafer on substrate (CoWoS) package, a system on integrated chip (SoIC), an antenna in package (AiP), co-packaged optics (CPO), a micro electro mechanical system (MEMS), or combinations thereof, but is not limited thereto.

[0061] Please refer to Figure 1 , Figure 1FIG. 1 shows a schematic diagram of an electronic device 10A according to some embodiments of the present disclosure. It is to be understood that portions of the electronic device 10A can be omitted from the figures for the sake of clarity and that only some portions of the electronic device 10A are shown schematically. Additional features can be added to the electronic device 10A described below according to some embodiments.

[0062] Referring to FIG. 1, the electronic device 10A includes an electronic unit EU and a circuit structure CS electrically connected to the electronic unit EU. According to some embodiments, the electronic unit EU can include a chip 100, a conductive pad 102, and an insulating layer 104, but the present disclosure is not limited thereto. The conductive pad 102 can be disposed on one side of the chip 100, the chip 100 can be electrically connected to the conductive pad 102, and the chip 100 can be electrically connected to the circuit structure CS through the conductive pad 102. The insulating layer 104 can be in contact with the chip 100 and the conductive pad 102. According to some embodiments, the insulating layer 104 can be disposed between the chip 100 and the circuit structure CS, and the insulating layer 104 can surround the conductive pad 102. Figure 1 According to some embodiments, the chip 100 can include, for example, a known-good die (KGD), an integrated circuit chip (IC), a surface mount device (SMD), a diode chip, an antenna unit, a sensor, a structure of a semiconductor-related process, or a structure of a semiconductor-related process disposed on a substrate (e.g., polyimide, glass, silicon substrate, or other suitable substrate material), or other suitable electronic components, but the present disclosure is not limited thereto. Specifically, according to some embodiments, the electronic unit EU can include a system-on-chip, a dynamic random access memory, a high bandwidth memory, a photonic integrated circuit (PIC), an application-specific integrated circuit, or other logic integrated circuit.

[0063] In detail, the electronic unit EU can include at least one conductive pad 102. According to some embodiments, the width of the conductive pad 102 can be the same or different in the cross-sectional view. According to some embodiments, the conductive pad 102 can include a conductive material, such as a metal conductive material. According to some embodiments, the conductive pad 102 can include copper (Cu), titanium (Ti), aluminum (Al), tungsten (W), silver (Ag), gold (Au), tin (Sn), molybdenum (Mo), chromium (Cr), nickel (Ni), platinum (Pt), palladium (Pd), an alloy of the foregoing metals, other suitable conductive materials, or a combination thereof, but the present disclosure is not limited thereto. Furthermore, according to embodiments of the present disclosure, the aforementioned width can be the maximum width of the conductive pad 102 perpendicular to the normal direction of the chip 100.

[0064] ​

[0065] According to some embodiments, the insulating layer 104 can be a molding compound or an underfill, but is not limited thereto. According to some embodiments, the insulating layer 104 can include a molding compound, an epoxy, other suitable encapsulation material, or a combination thereof, but is not limited thereto.

[0066] According to some embodiments, the circuit structure CS can include the conductive layer 202a, the conductive layer 202b, the insulating layer 200a, the insulating layer 200b, and the first heat dissipation member 300A (also denoted as 300A-1 for convenience of subsequent description), the insulating layer 200b can be disposed on the insulating layer 200a, the conductive layer 202b can be disposed on the conductive layer 202a, and the insulating layer 200b can be disposed between the conductive layer 202a and the electronic unit EU. According to some embodiments, the conductive layer 202b can serve as a contact pad, and the conductive pad 102 of the electronic unit EU can be electrically connected to the circuit structure CS through the conductive layer 202b.

[0067] Further, the circuit structure CS can be a redistribution layer (RDL) of the electronic device 10A, which includes at least one conductive layer (e.g., the conductive layer 202a, the conductive layer 202b) and at least one insulating layer (e.g., the insulating layer 200a, the insulating layer 200b), and can be used to redistribute the lines of the electronic device and / or to further increase the line fan-out area, or to electrically connect different electronic components to each other via the circuit structure CS. The insulating layers and the conductive layers can be stacked in a direction parallel to the normal direction of the electronic unit EU. The redistribution layer can expand the connection to a wider pitch or redistribute the connection to another connection with a different pitch, and / or the redistribution layer can serve as a substrate for the electrical interface wiring between one connection and another connection. For example, the pitch of the two adjacent contact pads on one end of the redistribution layer can be less than or equal to the pitch of the two adjacent contact pads on the other end of the redistribution layer away from the electronic component, so that the redistribution layer can adjust the line fan-out condition or electrically connect the circuit structure / electronic component with a first pitch to the circuit structure / electronic component with a second pitch, but the application is not limited thereto. The steps of forming the redistribution layer can include providing a stack of at least one conductive layer and at least one insulating layer, and the method of forming the redistribution layer can include processes such as lithography, etching, surface treatment, laser, electroplating, chemical plating, deposition, atomic layer deposition, etc. The surface treatment can include roughening or activating the surface of the insulating layer or the surface of the conductive layer to improve the adhesion of the insulating layer or the conductive layer, for example, by increasing the surface roughness to improve the bonding force with the subsequent film layer. According to some embodiments, when the redistribution layer has multiple insulating layers, the coefficients of thermal expansion of the insulating layers can be the same or different. Further, according to some embodiments, when the coefficients of thermal expansion of the insulating layers are different, the coefficient of thermal expansion of the insulating layer close to the electronic unit EU is less than the coefficient of thermal expansion of the insulating layer away from the electronic unit EU.

[0068] Specifically, according to some embodiments, the materials of the conductive layer 202a and the conductive layer 202b can include copper (Cu), titanium (Ti), aluminum (Al), tungsten (W), silver (Ag), gold (Au), tin (Sn), molybdenum (Mo), chromium (Cr), nickel (Ni), platinum (Pt), palladium (Pd), alloys of the aforementioned metals, other suitable conductive materials, or combinations thereof, but the application is not limited thereto. Furthermore, the material of the conductive layer 202a can be the same as or different from the material of the conductive layer 202b.

[0069] According to some embodiments, the material of the insulating layer 200a and the insulating layer 200b can include an inorganic material, an organic material, or a combination thereof, but is not limited thereto. According to some embodiments, the inorganic material can include silicon nitride, silicon oxide, silicon oxynitride, glass, other suitable insulating material, or a combination thereof, but is not limited thereto. According to some embodiments, the organic material can include polyimide (PI), photosensitive polyimide (PSPI), polybenzoxazole (PBO), benzocyclobutene (BCB), epoxy, ABF (Ajinomoto Build-up Film) build-up material, solder resist material, other suitable insulating material, or a combination thereof, but is not limited thereto. As previously mentioned, the material of the insulating layer 200a can be the same as or different from the insulating layer 200b.

[0070] Further, according to some embodiments, a first heat dissipating member 300A can be disposed in the circuit structure CS, and the first heat dissipating member 300A can contact the conductive layer 202a. For example, in the cross-sectional view, the first heat dissipating member 300A can be disposed in the gap between the patterned portions of the conductive layer 202a, and contact the side edges of the conductive layer 202a. According to some embodiments, the upper surface and / or the lower surface of the first heat dissipating member 300A can be substantially flush or coplanar with the upper surface and / or the lower surface of the conductive layer 202a, but is not limited thereto. Further, according to some embodiments, the first heat dissipating member 300A also contacts the insulating layer 200a and the insulating layer 200b. In particular, the heat transfer coefficient of the first heat dissipating member 300A is greater than the heat transfer coefficient of the insulating layer 200b and less than the heat transfer coefficient of the conductive layer 202a. According to some embodiments, the coefficient of thermal expansion (CTE) of the first heat dissipating member 300A is greater than the coefficient of thermal expansion of the insulating layer 200b and less than the coefficient of thermal expansion of the conductive layer 202a.

[0071] In detail, according to some embodiments, the heat transfer coefficient of the first heat dissipating member 300A can be greater than or equal to 3 W / mK and less than or equal to 50 W / mK (i.e., 3 W / mK ≤ heat transfer coefficient ≤ 50 W / mK), for example, 5 W / mK, 10 W / mK, 15 W / mK, 20 W / mK, 25 W / mK, 30 W / mK, 35 W / mK, 40 W / mK, or 45 W / mK, but is not limited thereto. According to some embodiments, the coefficient of thermal expansion of the first heat dissipating member 300A can be greater than or equal to 5 ppm / °C and less than or equal to 40 ppm / °C (i.e., 5 ppm / °C ≤ coefficient of thermal expansion ≤ 40 ppm / °C). For example, at room temperature (25°C), the coefficient of thermal expansion of the first heat dissipating member 300A can be greater than or equal to 5 ppm and less than or equal to 40 ppm (i.e., 5 ppm ≤ coefficient of thermal expansion ≤ 40 ppm). Figure 1In the illustrated embodiment, the first heat-dissipating member 300A (300A-1) can have a coefficient of thermal expansion greater than or equal to 10 ppm / °C and less than or equal to 40 ppm / °C, such as 15 ppm / °C, 20 ppm / °C, 25 ppm / °C, 30 ppm / °C, or 35 ppm / °C, but not limited thereto. Further, the ratio of the coefficient of thermal expansion of the first heat-dissipating member 300A (300A-1) to the coefficient of thermal expansion of the insulating layer 200a or the insulating layer 200b can be between 0.6 and 4 (i.e., 0.6 ≤ coefficient of thermal expansion of the first heat-dissipating member 300A-1 / coefficient of thermal expansion of the insulating layer 200a ≤ 4, or 0.6 ≤ coefficient of thermal expansion of the first heat-dissipating member 300A-1 / coefficient of thermal expansion of the insulating layer 200b ≤ 4), such as 0.7, 0.8, 0.9, 1, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2, 2.1, 2.2, 2.3, 2.4, 2.5, 2.6, 2.7, 2.8, 2.9, 3, 3.1, 3.2, 3.3, 3.4, 3.5, 3.6, 3.7, 3.8, or 3.9, but not limited thereto.

[0072] It is worth noting that, by virtue of the foregoing configuration of the first heat-dissipating member 300A, the horizontal heat conduction capability of the electronic device or the circuit structure CS can be significantly improved, which can be referred to as follows. Figure 1 The heat-dissipating direction indicated by the dashed arrow.

[0073] According to some embodiments, the base material of the first heat-dissipating member 300A can include a photosensitive polyimide (PSPI), an epoxy, other suitable polymer material, or a combination thereof, but not limited thereto. Further, the first heat-dissipating member 300A can include filler particles. According to some embodiments, the first heat-dissipating member 300A can include different kinds of filler particles, such as filler particles having different thermal conductivities. Further, according to some embodiments, the first heat-dissipating member 300A can include first filler particles having a relatively small thermal conductivity, such as silicon dioxide, aluminum oxide, titanium dioxide, or a combination thereof, and second filler particles having a relatively large thermal conductivity, such as graphene, silicon carbide, aluminum nitride, or a combination thereof, but not limited thereto.

[0074] Further, according to some embodiments, the solid content of the first heat-dissipating member 300A can be between 20 wt% and 90 wt% (i.e., 20 wt% ≤ solid content ≤ 90 wt%). For example, in some embodiments, the solid content of the first heat-dissipating member 300A can be between 20 wt% and 80 wt% (i.e., 20 wt% ≤ solid content ≤ 80 wt%), such as 20 wt%, 25 wt%, 30 wt%, 35 wt%, 40 wt%, 45 wt%, 50 wt%, 55 wt%, 60 wt%, 65 wt%, 70 wt%, 75 wt%, or 80 wt%, but not limited thereto. Figure 1In the illustrated embodiment, the solid content of the first heat sink 300A (300A-1) can be between 20 wt% and 60 wt%, for example, 30 wt%, 35 wt%, 40 wt%, 45 wt%, 50 wt%, or 55 wt%, but is not limited thereto. According to some embodiments, the particle size of the filler particles in the first heat sink 300A can be between 0.02 mm and 55 mm. For example, in… Figure 1 In the illustrated embodiment, the particle size of the filler particles in the first heat sink 300A (300A-1) can be between 0.02 mm and 30 mm, for example, 0.5 mm, 1 mm, 5 mm, 10 mm, 15 mm, 20 mm, or 25 mm, but is not limited thereto. In particular, filler particles with the aforementioned particle size range can provide a complete heat conduction path. Furthermore, according to some embodiments, in the first heat sink 300A (300A-1), the ratio of the content of first filler particles with relatively low thermal conductivity to the content of second filler particles with relatively high thermal conductivity can be greater than 0 and less than or equal to 0.6 (i.e., 0 < first filler particle content / second filler particle content ≤ 0.6). For example, in... Figure 1 In the illustrated embodiment, the ratio of the content of the first filler particle to the content of the second filler particle can be greater than or equal to 0.4 and less than or equal to 0.6, for example, it can be 0.45, 0.5 or 0.55, but is not limited thereto. The first filler particle and the second filler particle configured in the aforementioned ratio can improve the insulation characteristics of the first heat sink 300A and avoid electrical interference to the circuit structure CS.

[0075] like Figure 2 As shown, the electronic device 10A may further include an encapsulation layer 400 surrounding the electronic unit EU. The encapsulation layer 400 may contact the chip 100, the insulating layer 104, and the insulating layer 200b of the circuit structure CS. The encapsulation layer 400 can reduce the impact of water and oxygen from the external environment on the electronic unit EU. According to some embodiments, the thermal conductivity of the first heat sink 300A is less than or equal to the thermal conductivity of the encapsulation layer 400. According to some embodiments, the encapsulation layer 400 may comprise a molding compound, epoxy resin, other suitable encapsulation materials, or combinations thereof, but is not limited thereto. Furthermore, the material of the encapsulation layer 400 may be the same as or different from the material of the insulating layer 104. According to some embodiments, the encapsulation layer 400 may be formed by compression molding, transfer molding, or other suitable methods. According to some embodiments, the encapsulation layer 400 may be molded in a liquid or semi-liquid state and then cured.

[0076] In addition, according to some embodiments, the electronic device 10A can further include another first heat dissipation member 300A (for convenience of description, the first heat dissipation member 300A disposed in the encapsulation layer 400 is also denoted as 300A-2). The first heat dissipation member 300A-2 can be disposed in the encapsulation layer 400 and contact the insulating layer 200b. According to some embodiments, the first heat dissipation member 300A-2 can extend from the top surface to the bottom surface of the encapsulation layer 400, in other words, the first heat dissipation member 300A-2 can penetrate through the encapsulation layer 400. The material and function of the first heat dissipation member 300A-2 are the same as or similar to those of the aforementioned first heat dissipation member 300A-1, and thus are not repeated here.

[0077] Further, the thermal conductivity of the first heat dissipation member 300A (300A-2) disposed in the encapsulation layer 400 can be greater than or equal to 3 W / mK and less than or equal to 50 W / mK, and the coefficient of thermal expansion of the first heat dissipation member 300A (300A-2) can be greater than or equal to 5 ppm / °C and less than or equal to 40 ppm / °C (for example, greater than or equal to 3 ppm / °C and less than or equal to 15 ppm / °C), for example, 5 ppm / °C, 8 ppm / °C, or 12 ppm / °C, but not limited thereto. Further, the ratio of the coefficient of thermal expansion of the first heat dissipation member 300A (300A-2) to the coefficient of thermal expansion of the insulating layer 200a or the insulating layer 200b can be between 0.6 and 4 (for example, between 0.8 and 4) (i.e., 0.8 ≤ the coefficient of thermal expansion of the first heat dissipation member 300A-2 / the coefficient of thermal expansion of the insulating layer 200a ≤ 4, or 0.8 ≤ the coefficient of thermal expansion of the first heat dissipation member 300A-2 / the coefficient of thermal expansion of the insulating layer 200b ≤ 4), for example, can be 0.9, 1, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2, 2.1, 2.2, 2.3, 2.4, 2.5, 2.6, 2.7, 2.8, 2.9, 3, 3.1, 3.2, 3.3, 3.4, 3.5, 3.6, 3.7, 3.8, or 3.9, but not limited thereto.

[0078] In addition, according to some embodiments, the first heat dissipation member 300A (300A-2) can have a solid content between 20 wt% and 90 wt% (e.g., between 60 wt% and 90 wt%), such as 65 wt%, 70 wt%, or 75 wt%, but not limited thereto. According to some embodiments, the first heat dissipation member 300A (300A-2) can have a particle size of the filler particles between 0.02 mm and 55 mm (e.g., between 0.02 mm and 50 mm), such as 0.5 mm, 1 mm, 5 mm, 10 mm, 15 mm, 20 mm, 25 mm, 30 mm, 35 mm, 40 mm, or 45 mm, but not limited thereto. In particular, the filler particles having the aforementioned particle size range can provide a complete thermal conduction path. In addition, according to some embodiments, in the first heat dissipation member 300A (300A-2), the ratio of the first filler particle content having a relatively small thermal conductivity coefficient to the second filler particle content having a relatively large thermal conductivity coefficient can be greater than 0 and less than or equal to 0.6 (e.g., greater than 0.2 and less than or equal to 0.4), such as 0.25, 0.3, or 0.35, but not limited thereto. The first filler particles and the second filler particles configured with the aforementioned ratio can improve the insulation properties of the first heat dissipation member 300A and avoid electrical interference to the circuit structure CS.

[0079] According to some embodiments, the electronic device 10A can further include a second heat dissipation member 300B and a third heat dissipation member 300C. The second heat dissipation member 300B can be disposed on the packaging layer 400, and the electronic unit EU is disposed between the second heat dissipation member 300B and the circuit structure CS. The third heat dissipation member 300C can be disposed on the second heat dissipation member 300B with a plurality of fin structures FN. The second heat dissipation member 300B can be in contact with the chip 100, the packaging layer 400, and the first heat dissipation member 300A-2 disposed in the packaging layer 400. According to some embodiments, the third heat dissipation member 300C can be in contact with air, and the fin structures FN can increase the surface in contact with air, improving the heat dissipation effect.

[0080] According to some embodiments, the thermal conductivity coefficient of the second heat dissipation member 300B is greater than the thermal conductivity coefficient of the first heat dissipation member 300A. According to some embodiments, the thermal conductivity coefficient of the third heat dissipation member 300C is greater than the thermal conductivity coefficient of the first heat dissipation member 300A. For example, the thermal conductivity coefficient of the second heat dissipation member 300B is greater than the thermal conductivity coefficient of the first heat dissipation member 300A and less than the thermal conductivity coefficient of the third heat dissipation member 300C. According to some embodiments, the material of the second heat dissipation member 300B can be the same as or similar to the material of the first heat dissipation member 300A. According to some embodiments, the material of the third heat dissipation member 300C can include metal (e.g., copper), graphite, other suitable materials, or combinations thereof, but not limited thereto.

[0081] In addition, according to some embodiments, the electronic device 10A can further include a connecting component 402, which can be electrically connected with the conductive layer 202a of the circuit structure CS. According to some embodiments, the connecting component 402 can be further electrically connected with an external electronic component, for example, the connecting component 402 can be further electrically connected with a printed circuit board (PCB), a chip, a control component or other electronic components (not shown), but the present application is not limited thereto.

[0082] According to some embodiments, the material of the connecting component 402 can include tin, silver, lead-free tin, copper, nickel, gold, other suitable materials or combinations thereof, but is not limited thereto. According to some embodiments, the connecting component 402 can be bonded on the conductive layer 202a of the circuit structure CS by a reflow process, a fusion bonding process, a hybrid bonding process, a metal-to-metal bonding process, other suitable methods or combinations thereof.

[0083] Please refer to Figure 2 , Figure 2 A cross-sectional structure schematic diagram of an electronic device 10B according to some other embodiments of the present application is shown. It should be understood that, for the sake of clarity, some components of the electronic device 10B can be omitted in the drawings, and only some components are shown schematically. According to some embodiments, additional features can be added to the electronic device 10B described below. In addition, components or components in the following text that are the same as or similar to those in the foregoing text will be denoted by the same or similar reference numerals, and their materials and functions are the same as or similar to those described in the foregoing text, so this part will not be described again in the following text.

[0084] Figure 3The electronic device 10B shown is substantially similar to the electronic device 10A, except that the first heat dissipation member 300A (300A-1) of the electronic device 10B is not disposed in the gap between the patterned portions of the conductive layer 202a of the circuit structure CS. For example, the first heat dissipation member 300A-1 can be disposed at the periphery of the conductive layer 202a. Similarly, in this embodiment, the first heat dissipation member 300A-1 can be disposed in the circuit structure CS, and the first heat dissipation member 300A-1 can contact the conductive layer 202a. The upper surface and / or the lower surface of the first heat dissipation member 300A-1 can be substantially flush or coplanar with the upper surface and / or the lower surface of the conductive layer 202a, but is not limited thereto. Further, the first heat dissipation member 300A-1 also contacts the insulating layer 200a and the insulating layer 200b. The thermal conductivity of the first heat dissipation member 300A-1 is greater than the thermal conductivity of the insulating layer 200b and less than the thermal conductivity of the conductive layer 202a. The coefficient of thermal expansion of the first heat dissipation member 300A-1 is greater than the coefficient of thermal expansion of the insulating layer 200b and less than the coefficient of thermal expansion of the conductive layer 202a. In particular, in this embodiment, the thermal conductivity of the first heat dissipation member 300A-1 can be greater than or equal to 3 W / mK and less than or equal to 50 W / mK, and the coefficient of thermal expansion of the first heat dissipation member 300A-1 can be greater than or equal to 10 ppm / °C and less than or equal to 40 ppm / °C. Further, the ratio of the coefficient of thermal expansion of the first heat dissipation member 300A-1 to the coefficient of thermal expansion of the insulating layer 200a or the insulating layer 200b can be between 0.6 and 4. In addition, in this embodiment, the solid content of the first heat dissipation member 300A-1 can be between 20 wt% and 60 wt%, and the particle size of the filler particles of the first heat dissipation member 300A-1 can be between 0.02 mm and 30 mm. In particular, the filler particles having the aforementioned particle size range can provide a complete thermal conduction path. In addition, in this embodiment, the ratio of the content of the first filler particles to the content of the second filler particles can be greater than or equal to 0.4 and less than or equal to 0.6. The first filler particles and the second filler particles configured in the aforementioned ratio can improve the insulation properties of the first heat dissipation member 300A and avoid electrical interference to the circuit structure CS.

[0085] Please refer to Figure 3 , Figure 3 A cross-sectional structure of an electronic device 10C according to some other embodiments of the present disclosure is shown. It should be understood that, for the sake of clarity, some components of the electronic device 10C can be omitted from the drawings, and only some components are shown schematically. According to some embodiments, additional features can be added to the electronic device 10C described below.

[0086] Figure 4The electronic device 10C is substantially similar to the electronic device 10A. Compared with the electronic device 10A, the first heat dissipation member 300A (300A-2) disposed in the encapsulation layer 400 of the electronic device 10C further extends on the side surface of the insulation layer 104. The first heat dissipation member 300A (300A-2) contacts the electronic unit EU. In detail, in this embodiment, the first heat dissipation member 300A-2 extends from the top surface to the bottom surface of the encapsulation layer 400, and further extends on the side surface and part of the top surface of the conductive layer 202b and the insulation layer 104. The first heat dissipation member 300A-2 can be conformably disposed on the side surface and part of the top surface of the insulation layer 104. Similarly, in this embodiment, the thermal conductivity of the first heat dissipation member 300A-2 is greater than the thermal conductivity of the insulation layer 200b and less than the thermal conductivity of the conductive layer 202a. The thermal expansion coefficient of the first heat dissipation member 300A-2 is greater than the thermal expansion coefficient of the insulation layer 200b and less than the thermal expansion coefficient of the conductive layer 202a. In detail, in this embodiment, the thermal conductivity of the first heat dissipation member 300A-2 can be greater than or equal to 3 W / mK and less than or equal to 50 W / mK, and the thermal expansion coefficient of the first heat dissipation member 300A-2 can be greater than or equal to 3 ppm / °C and less than or equal to 15 ppm / °C. Further, the ratio of the thermal expansion coefficient of the first heat dissipation member 300A-2 to the thermal expansion coefficient of the insulation layer 200a or the insulation layer 200b can be between 0.8 and 4. In addition, in this embodiment, the solid content of the first heat dissipation member 300A-2 can be between 60 wt% and 90 wt%, and the particle size of the filler particles of the first heat dissipation member 300A-2 can be between 0.02 mm and 50 mm. In particular, the filler particles with the aforementioned particle size range can provide a complete thermal conduction path. In addition, in this embodiment, the ratio of the content of the first filler particles to the content of the second filler particles can be greater than or equal to 0.2 and less than or equal to 0.4. The first filler particles and the second filler particles configured in the aforementioned ratio can improve the insulation properties of the first heat dissipation member 300A-2, avoiding electrical interference to the circuit structure CS.

[0087] Please refer to Figure 4 , Figure 4 A cross-sectional structure schematic diagram of an electronic device 10D according to some other embodiments of the present application is shown. It should be understood that, for the sake of clarity, some components of the electronic device 10D can be omitted from the drawings, and only some components are schematically shown. According to some embodiments, additional features can be added to the electronic device 10D described below.

[0088] Figure 5The electronic device 10D is substantially similar to the electronic device 10B, except that the insulating layer 104 in the electronic device 10D is replaced by a first thermal dissipation member 300A (300A-2). In this embodiment, the first thermal dissipation member 300A-2 is used as a filler material disposed between the circuit structure CS and the chip 100, and the first thermal dissipation member 300A (300A-2) contacts the electronic unit EU. The first thermal dissipation member 300A-2 can contact the chip 100, the conductive pad 102, the conductive layer 202b, and the insulating layer 200b. Similarly, in this embodiment, the thermal conductivity of the first thermal dissipation member 300A-2 is greater than the thermal conductivity of the insulating layer 200b and less than the thermal conductivity of the conductive layer 202a. The thermal expansion coefficient of the first thermal dissipation member 300A-2 is greater than the thermal expansion coefficient of the insulating layer 200b and less than the thermal expansion coefficient of the conductive layer 202a. In detail, in this embodiment, the thermal conductivity of the first thermal dissipation member 300A-2 can be greater than or equal to 3 W / mK and less than or equal to 50 W / mK, and the thermal expansion coefficient of the first thermal dissipation member 300A-2 can be greater than or equal to 3 ppm / °C and less than or equal to 15 ppm / °C. Furthermore, the ratio of the thermal expansion coefficient of the first thermal dissipation member 300A-2 to the thermal expansion coefficient of the insulating layer 200a or the insulating layer 200b can be between 0.8 and 4. In addition, in this embodiment, the solid content of the first thermal dissipation member 300A-2 can be between 60 wt% and 90 wt%, and the particle size of the filler particles of the first thermal dissipation member 300A-2 can be between 0.02 mm and 50 mm. In particular, the filler particles having the aforementioned particle size range can provide a complete thermal conduction path. In addition, in this embodiment, the ratio of the content of the first filler particles to the content of the second filler particles can be greater than or equal to 0.2 and less than or equal to 0.4. The first filler particles and the second filler particles configured in the aforementioned ratio can improve the insulating properties of the first thermal dissipation member 300A-2, thereby avoiding electrical interference to the circuit structure CS.

[0089] Next, referring to Figure 5 , Figure 5 shows a cross-sectional structure of an electronic device 10E according to some other embodiments of the present application. It should be understood that, for the sake of clarity, some components of the electronic device 10E can be omitted from the drawings, and only some components are schematically shown. According to some embodiments, additional features can be added to the electronic device 10E described below.

[0090] Figure 6The electronic device 10E is a package structure including a plurality of electronic units EU, which can have the same or different kinds of chips 100. In this embodiment, some of the chips 100 can be disposed on a substrate 101, which can be a through glass via (TGV) substrate having through vias 101V, and can serve as an interposer substrate. Some of the chips 100 can be bonded on the substrate 101 by a bonding assembly BP, which can include conductive bumps, but is not limited thereto. Further, the substrate 101 can be further electrically connected with the bonding assembly 402 by conductive pads 102 and circuit structures CS, and can be further electrically connected with external electronic components 500 by the bonding assembly 402. According to some embodiments, the electronic components 500 can include a printed circuit board (PCB), but the present application is not limited thereto.

[0091] Please refer to Figure 6 , Figure 6 A cross-sectional structure schematic diagram of an electronic device 10F according to some other embodiments of the present application is shown. It should be understood that, for the sake of clarity, some components of the electronic device 10F can be omitted from the drawings, and only some components are schematically shown. According to some embodiments, additional features can be added to the electronic device 10F described below.

[0092] Figure 7The electronic device 10F is substantially similar to the electronic device 10A. Compared with the electronic device 10A, the encapsulation layer 400 of the electronic device 10F is replaced by the first heat dissipation member 300A (300A-2). The electronic device 10F can not have the first heat dissipation member 300A disposed in the circuit structure CS. In this embodiment, the first heat dissipation member 300A-2 is used as the encapsulation layer 400. The first heat dissipation member 300A (300A-2) contacts the electronic unit EU. The first heat dissipation member 300A-2 can contact the chip 100, the conductive pad 102, and the insulating layer 200b. In this embodiment, the thermal conductivity of the first heat dissipation member 300A-2 is greater than the thermal conductivity of the insulating layer 200b and less than the thermal conductivity of the conductive layer 202a. The thermal expansion coefficient of the first heat dissipation member 300A-2 is greater than the thermal expansion coefficient of the insulating layer 200b and less than the thermal expansion coefficient of the conductive layer 202a. In detail, in this embodiment, the thermal conductivity of the first heat dissipation member 300A-2 can be greater than or equal to 3 W / mK and less than or equal to 50 W / mK, and the thermal expansion coefficient of the first heat dissipation member 300A-2 can be greater than or equal to 3 ppm / °C and less than or equal to 15 ppm / °C. Furthermore, the ratio of the thermal expansion coefficient of the first heat dissipation member 300A-2 to the thermal expansion coefficient of the insulating layer 200a or the insulating layer 200b can be between 0.8 and 4. In addition, in this embodiment, the solid content of the first heat dissipation member 300A-2 can be between 60 wt% and 90 wt%, and the particle size of the filler particles of the first heat dissipation member 300A-2 can be between 0.02 mm and 50 mm. In particular, the filler particles with the aforementioned particle size range can provide a complete heat conduction path. In addition, in this embodiment, the ratio of the content of the first filler particles to the content of the second filler particles can be greater than or equal to 0.2 and less than or equal to 0.4. The first filler particles and the second filler particles configured in the aforementioned ratio can improve the insulation properties of the first heat dissipation member 300A-2 and avoid electrical interference to the circuit structure CS.

[0093] In addition, the electronic device 10F can further include a buffer layer 404 disposed on the surface of the insulating layer 200a. The buffer layer 404 can contact the insulating layer 200a and the connecting component 402, and the connecting component 402 can pass through the buffer layer 404. The buffer layer 404 can absorb stress and protect the electronic device 10F. According to some embodiments, the buffer layer 404 can include a single layer or multiple layers. According to some embodiments, the buffer layer 404 can include a high-molecular insulating material, such as ABF build-up film, polybenzoxazole (PBO), polyimide, photosensitive polyimide (PSPI), benzocyclobutene (BCB), epoxy, other suitable buffer materials, or combinations thereof, but is not limited thereto.

[0094] Please refer to Figure 7 ​, Figure 7 FIG. 28 shows a cross-sectional view of an electronic device 10G according to some embodiments of the present disclosure. It is to be understood that portions of the electronic device 10G can be omitted from the figures for the sake of clarity, and that portions of the electronic device 10G can be shown in schematic form. According to some embodiments, additional features can be added to the electronic device 10G described below.

[0095] Figure 8 The electronic device 10G shown is generally similar to the electronic device 10A, except that the first heat spreader 300A (300A-2) of the electronic device 10G extends from the top surface of the encapsulation layer 400 to the conductive layer 202a of the circuit structure CS (the first heat spreader 300A disposed in the circuit structure CS is also denoted 300A-1). In this embodiment, the first heat spreader 300A-1 can contact the conductive layer 202a, and the first heat spreader 300A-2 can contact the second heat spreader 300B, the encapsulation layer 400, and the insulating layer 200b. In this embodiment, the thermal conductivity of the first heat spreader 300A (300A-1 and 300A-2) is greater than the thermal conductivity of the insulating layer 200b and less than the thermal conductivity of the conductive layer 202a. The coefficient of thermal expansion of the first heat spreader 300A (300A-1 and 300A-2) is greater than the coefficient of thermal expansion of the insulating layer 200b and less than the coefficient of thermal expansion of the conductive layer 202a. In particular, in this embodiment, the thermal conductivity of the first heat spreader 300A (300A-1 and 300A-2) can be greater than or equal to 3 W / mK and less than or equal to 50 W / mK, and the coefficient of thermal expansion of the first heat spreader 300A can be greater than or equal to 3 ppm / °C and less than or equal to 15 ppm / °C. Further, in this embodiment, the solid content of the first heat spreader 300A can be between 60 wt% and 90 wt%, and the particle size of the filler particles of the first heat spreader 300A can be between 0.02 mm and 50 mm. In particular, filler particles having the foregoing particle size range can provide a complete thermal conduction path. Further, in this embodiment, the ratio of the content of the first filler particles to the content of the second filler particles can be greater than or equal to 0.2 and less than or equal to 0.4. The first filler particles and the second filler particles configured in the foregoing ratio can improve the insulating properties of the first heat spreader 300A (300A-1 and 300A-2) and avoid electrical interference to the circuit structure CS.

[0096] Please refer to Figure 8 , Figure 8FIG. 10 shows a schematic diagram of a cross-sectional view of an electronic device 10H according to some embodiments of the present disclosure. It is to be understood that portions of the electronic device 10H can be omitted from the figures for clarity and only some of the components of the electronic device 10H are shown schematically. Additional features can be added to the electronic device 10H described below according to some embodiments.

[0097] Figure 8 The electronic device 10H shown is a package structure including a plurality of electronic units EU, which can have the same or different types of chips 100. In this embodiment, the electronic units EU can be first disposed on a substrate 201, which can be a through glass via (TGV) substrate having through vias 201V, and the substrate 201 can serve as an interposer substrate. The chips 100 can be electrically connected to a circuit structure CS via connection components 103, which can include conductive layers 202a, 202b, 202c, 202d, and insulating layers 200a, 200b, 200c stacked in a direction parallel to the normal direction of the electronic units EU. Further, the electronic device 10H can further include an insulating layer 106, which can be in contact with the package layer 400, the substrate 201, and the insulating layer 502, etc. The insulating layer 106 can serve as a filler material, and the material of the insulating layer 106 can be the same as or similar to that of the insulating layer 104. In addition, the electronic device 10H can further include a package layer 403, which can surround and be in contact with the package layer 400 and the insulating layer 106, and the package layer 403 can reduce the influence of water and oxygen in the external environment on the package structure. The material of the package layer 403 can be the same as or similar to that of the package layer 400.

[0098] Further, the circuit structure CS can be electrically connected to conductive components (not shown) on the substrate 501 via conductive components 203 disposed in the through vias 201V, connection components 205, and contact pads 503. In detail, the contact pads 503 can penetrate the insulating layer 502 to be electrically connected to the conductive components on the substrate 501. The substrate 501 can also be a through glass via substrate having through vias 501V, and the circuit structure CS can be electrically connected to connection components 509 via conductive components 505 disposed in the through vias 501V and conductive pads 507.

[0099] It is to be noted that in this embodiment, a first heat dissipation member 300A can be disposed on the side surface of the through vias 201V of the substrate 201 and extend on the surface of the substrate 201 (e.g., the side of the substrate 201 away from the circuit structure CS), and another first heat dissipation member 300A' can be disposed on the side surface of the through vias 501V of the substrate 501 and extend on the surface of the substrate 501 (e.g., the side of the substrate 501 away from the circuit structure CS).

[0100] In addition, according to some embodiments, part of the surface of the substrate 201 and the substrate 501 can be roughened, for example, the substrate 201 has a roughened surface on the side close to the circuit structure CS, and the substrate 501 has a roughened surface on the side close to the circuit structure CS, thereby improving the bonding force between the substrate and other film layers. Furthermore, according to some embodiments, the roughness of the surface layer (for example, the side close to the circuit structure CS) of the circuit structure CS (for example, the insulating layer 200c in the circuit structure CS) is greater than the roughness of the surface layer (for example, the side close to the circuit structure CS) of the substrate 201 or the roughness of the surface layer (for example, the side close to the circuit structure CS) of the substrate 501, and the roughness of the surface layer of the substrate 201 or the surface layer of the substrate 501 is greater than the roughness of the surface layer (for example, the side close to the circuit structure CS) of the conductive layer (for example, the conductive layer 202a in the circuit structure CS). Figure 8 ​

[0101] In summary, according to the embodiments of the present application, the electronic device provided includes a specific heat dissipation component configuration, which can improve the heat dissipation effect of the electronic device (for example, the electronic device with a re-distribution layer structure), thereby improving the reliability and performance of the electronic device.

[0102] Although the embodiments of the present application and their advantages have been disclosed, it should be understood that any person skilled in the art can make modifications, substitutions and refinements without departing from the spirit and scope of the present application. The features of the embodiments of the present application can be arbitrarily mixed and used as long as they do not conflict with each other. In addition, the scope of protection of the present application is not limited to the processes, machines, manufactures, compositions of matter, means, methods and steps described in the specific embodiments in the specification. Any person skilled in the art can understand the current or future developed processes, machines, manufactures, compositions of matter, means, methods and steps from the disclosed content of the present application, as long as they can substantially achieve the same function or obtain substantially the same results as in the embodiments described herein. Therefore, the scope of protection of the present application includes the above processes, machines, manufactures, compositions of matter, means, methods and steps. The scope of protection of the present application is defined by the scope of the claims attached hereto. Any embodiment or claim of the present application does not necessarily achieve all the purposes, advantages, features disclosed in the present application.​​

Claims

1. An electronic device, characterized by comprising: Comprising: an electronic unit; and a circuit structure electrically connected to the electronic unit, the circuit structure comprising a first conductive layer, a first insulating layer disposed between the first conductive layer and the electronic unit, and a first heat dissipation member contacting the first conductive layer, wherein a thermal conductivity of the first heat dissipation member is greater than a thermal conductivity of the first insulating layer and less than a thermal conductivity of the first conductive layer. 2.The electronic device of claim 1, wherein, wherein a thermal expansion coefficient of the first heat dissipation member is greater than a thermal expansion coefficient of the first insulating layer and less than a thermal expansion coefficient of the first conductive layer. 3.The electronic device of claim 1, wherein, Further comprising: a packaging layer surrounding the electronic unit. 4.The electronic device of claim 3, wherein, Further comprising: a second heat dissipation member disposed on the packaging layer, the electronic unit being disposed between the second heat dissipation member and the circuit structure, and a thermal conductivity of the second heat dissipation member being greater than a thermal conductivity of the first heat dissipation member. 5.The electronic device of claim 3, wherein, wherein the thermal conductivity of the first heat dissipation member is less than or equal to a thermal conductivity of the packaging layer. 6.The electronic device of claim 3, wherein, Further comprising: a further first heat dissipation member disposed in the packaging layer and contacting the first insulating layer. 7.The electronic device of claim 6, wherein, wherein the further first heat dissipation member contacts the electronic unit. 8.The electronic device of claim 1, wherein, wherein the thermal conductivity of the first heat dissipation member is greater than or equal to 3 W / mK and less than or equal to 50 W / mK. 9.The electronic device of claim 2, wherein, wherein the thermal expansion coefficient of the first heat dissipation member is greater than or equal to 5 ppm / °C and less than or equal to 40 ppm / °C. 10.The electronic device of claim 4, wherein, Further comprising: a third heat dissipation member disposed on the second heat dissipation member having a plurality of fin structures, and a thermal conductivity of the third heat dissipation member being greater than a thermal conductivity of the first heat dissipation member.

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