High-heat-flux Chiplet vapor chamber structure based on partition design

Abstract

The invention relates to the field of cooling of high-heat-flux electronic devices, and discloses a high-heat-flux Chiplet vapor chamber structure based on partition design. Wherein the metal shell comprises an upper metal shell and a lower metal shell, and the upper metal shell and the lower metal shell are connected to form a closed space; the upper surface of the upper metal shell is connected with the liquid cooling plate, and the lower surface of the lower metal shell is connected with the electronic element; the supporting columns are distributed in the closed space and are supported between the upper metal shell and the lower metal shell; the capillary structure is located in the closed space and comprises an upper capillary structure, a lower capillary structure and a partition capillary structure, the upper capillary structure is fixed to the lower surface of the upper metal shell, and the lower capillary structure is fixed to the upper surface of the lower metal shell; the partition capillary structure is connected between the upper metal shell and the lower metal shell. The device has the advantages that rapid heat conduction in different transverse and longitudinal directions can be realized, a relatively large heat conductivity coefficient can be achieved with a relatively small heat dissipation / heating area ratio, and the problem of thermal crosstalk can be effectively inhibited.

Description

Technical Field

[0001] This invention relates to the field of cooling high heat flux electronic devices, and more particularly to a high heat flux density chiplet vapor chamber (VC) structure based on a partitioned design. Background Technology

[0002] Against the backdrop of developing electronic components with more functional designs, more compact size, shorter interconnects, and higher computing power, high-density multi-chip integration is considered an important future trend in chip integration technology. This trend, however, leads to the stacking of high-power modules, increasing thermal resistance in vertical layers and temperature non-uniformity, thus limiting the improvement of computing power. Furthermore, chip miniaturization and high integration result in a significant increase in local heat flux density. Currently, the hot spot heat flux density of integrated chips can reach the kW / cm² level, and the surface heat flux density can reach the 100W / cm² level. Therefore, research on chip-enhanced heat dissipation technology is one of the keys to improving chip performance. Traditional external heat dissipation methods rely on a "heat generation-heat dissipation-heat conduction" technical path, where the internal thermal resistance of the chip accounts for 80%, making it difficult to cool the high-power local hot spots of the chip. The lack of core-level efficient heat dissipation technology necessitates the development of embedded cooling technology. Currently, academia and industry have conducted extensive research on new efficient heat dissipation technologies, mainly including microchannel liquid flow boiling, fluid spray cooling, and vapor chamber cooling. Microchannel liquid flow boiling can enhance phase change heat transfer efficiency while adapting to compact development requirements; fluid spray cooling can withstand high ultimate heat flux density and obtain uniform cooling surface temperature by utilizing extremely strong unit mass fluid cooling capacity; vapor chamber cooling can utilize fluid evaporation behavior to drive its own capillary flow, achieving adaptive and self-regulating high-efficiency cooling.

[0003] Currently, in the industry, the requirements for power consumption above 1000W and local heat flux density exceeding 1W / mm² are significant. 2 A suitable and reliable heat spreader cooling solution has yet to be found for the heat flow distribution conditions. Among these challenges, achieving a VC (Vibration Ventilation) monolithic packaging process capable of withstanding reflow temperatures (at least 260°C) with a relatively thin thickness (<3.5 mm) remains difficult. The heat dissipation area to heat-receiving area ratio of common VCs is generally greater than 10:1, and heat dissipation capacity becomes a significant challenge when a larger area ratio cannot be achieved. Simultaneously, thermal crosstalk between different electronic components due to their different junction temperatures (logic components ~105°C, memory components ~95°C) also urgently needs to be addressed. Therefore, it is necessary to develop VC structure design methods that can achieve a large thermal conductivity with a small heat dissipation / heat-receiving area ratio, while simultaneously resolving the thermal crosstalk problem between different operating components. Summary of the Invention

[0004] This invention aims to at least partially solve one of the technical problems in related technologies. To this end, one objective of this invention is to propose a high heat flux density chiplet heat sink structure based on a partitioned design, which enables rapid heat conduction in different directions, both laterally and longitudinally, achieves a large thermal conductivity with a small heat dissipation / heat absorption area ratio, effectively suppresses thermal crosstalk, and is suitable for cooling high heat flux electronic devices.

[0005] The high heat flux density chiplet vapor chamber structure based on partitioned design according to the present invention includes: The metal casing includes an upper metal casing and a lower metal casing, which are connected to form a sealed space. The metal casing has a liquid injection port communicating with the sealed space. The upper surface of the upper metal casing is connected to a liquid cooling plate, and the lower surface of the lower metal casing is connected to electronic components. Support columns, which are distributed in the enclosed space and supported between the upper metal shell and the lower metal shell; The capillary structure is located in the sealed space and includes an upper capillary structure, a lower capillary structure, and a partitioned capillary structure. The upper capillary structure is fixed to the lower surface of the upper metal shell, and the lower capillary structure is fixed to the upper surface of the lower metal shell. There is a gap between the upper capillary structure and the lower capillary structure. The partitioned capillary structure is connected between the upper metal shell and the lower metal shell, dividing the sealed space into multiple evaporation chambers to meet the junction temperature requirements of different electronic components.

[0006] The working principle of the high heat flux density chiplet heat exchanger structure based on partitioned design in this invention embodiment is as follows: After the high heat flux density chiplet heat exchanger structure based on partitioned design comes into contact with the heat flux transferred from the working electronic components, the heat is transferred to the upper metal shell, and then to the lower metal shell. The liquid in the lower capillary structure undergoes a gas-liquid phase change upon heating, generating vapor and forming a gas-liquid interface. The vapor accumulates in the vapor chamber and transfers heat upwards to the upper capillary structure. Since the upper metal shell is connected to the liquid cooling plate, the upper capillary structure on the inner wall of the upper metal shell is relatively cool. The heated vapor condenses and re-condenses into droplets upon encountering the relatively cool surface of the upper capillary structure. This vapor is then transferred laterally through the upper capillary structure and diffused around it, before flowing back to the lower capillary structure through the vertically arranged capillary structure, preventing accumulation in the lower capillary structure. This process is repeated, utilizing the phase change process of the working fluid for rapid heat conduction, transferring the high heat flux absorbed by the upper metal shell to the upper metal shell. The upper metal shell then transfers the heat to the liquid cooling plate. In this process, the metal shell and support column can directly transfer heat. At the same time, the partitioned capillary structure can further transfer heat longitudinally and laterally, and transfer excessive heat in a targeted manner to a lower heat flow area to ensure that no high temperature area appears. It also prevents the lower junction temperature element from being affected by the heat flow of other areas and thus exceeding its working junction temperature, causing malfunction.

[0007] The high heat flux density Chiplet vapor chamber structure based on partitioned design in this embodiment of the invention has the following advantages: First, by setting the support columns and partitioned capillary structures between the upper metal shell and the upper metal shell, a good supporting effect is achieved, preventing the upper metal shell from collapsing, making the structure reliable and less prone to failure; Second, by setting the lower and upper capillary structures, the thermal conductivity of the vapor chamber is greatly enhanced, achieving rapid heat conduction. Simultaneously, the setting of the support columns further enhances the thermal conductivity of the vapor chamber; Third, due to the significant improvement in thermal conductivity, the high heat flux density Chiplet vapor chamber structure based on partitioned design in this embodiment of the invention... The high heat flux density chiplet heat exchanger structure designed for the heat source has an area ratio of no more than 10:1, resulting in a small heat exchanger volume and minimal space occupation. Fourthly, the partitioned capillary structure enables the zoning design of the vapor chamber, thereby achieving enhanced heat conduction in a fixed direction in local areas. This directs excessively high heat to lower heat flux areas, ensuring no high-temperature zones appear. Simultaneously, it prevents lower junction temperature components from being affected by heat flux from other areas, thus avoiding exceeding their operating junction temperature and causing malfunction. This not only improves the overall thermal conductivity of the structure but also avoids thermal crosstalk, protecting the normal operation of electronic components with different junction temperatures.

[0008] In summary, the high heat flux density Chiplet heat spreader structure based on partitioned design in this embodiment of the invention can achieve rapid heat conduction in different directions, both horizontally and vertically. It can achieve a large thermal conductivity with a small heat dissipation / heat absorption area ratio, effectively suppress thermal crosstalk problems, and is suitable for cooling high heat flux electronic devices.

[0009] In some embodiments, the thickness of the high heat flux density Chiplet vapor chamber structure based on partitioned design is no more than 3.5 mm, and the ratio of the heat dissipation area of ​​the upper surface to the heat-receiving area of ​​the lower surface is less than 10:1.

[0010] In some embodiments, the metal casing is a copper casing.

[0011] In some embodiments, the support column is a solid copper column.

[0012] In some embodiments, the capillary structure further includes an annular capillary structure disposed on the circumferential surface of the solid copper column.

[0013] In some embodiments, the partitioned capillary structure is strip-shaped.

[0014] In some embodiments, the capillary structure is a porous structure processed by a microgroove type, powder sintering type, foam metal type, or wire mesh sintering type.

[0015] In some embodiments, the upper capillary structure is welded and fixed to the upper metal shell; the lower capillary structure is welded and fixed to the lower metal shell; the upper end of the partitioned capillary structure is welded and fixed to the upper metal shell; and the lower end of the partitioned capillary structure is welded and fixed to the lower metal shell.

[0016] In some embodiments, the upper metal shell and the lower metal shell are welded together; the upper end of the support column is welded together with the upper metal shell; the lower end of the support column is welded together with the lower metal shell, or the support column and the lower metal shell are integrally formed.

[0017] In some embodiments, the upper surface of the upper metal casing and the liquid cooling plate, and the lower surface of the lower metal casing and the core are connected by a thermally conductive material layer.

[0018] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0019] Figure 1 This is a longitudinal cross-sectional schematic diagram of a high heat flux density Chiplet heat spreader structure based on partitioned design according to an embodiment of the present invention. Figure 2 yes Figure 1 Enlarged view of point A in the middle; Figure 3 This is a cross-sectional view of a high heat flux density Chiplet heat spreader structure based on partitioned design according to an embodiment of the present invention.

[0020] Figure Labels Metal shell 1; upper metal shell 101; lower metal shell 102; support column 2; capillary structure 3; upper capillary structure 301; lower capillary structure 302; partitioned capillary structure 303; annular capillary structure 304. Detailed Implementation

[0021] Embodiments of the present invention are described in detail below. Examples of these embodiments are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0022] The following is combined Figures 1 to 3 This invention describes a high heat flux density Chiplet vapor chamber structure based on a partitioned design, according to an embodiment of the present invention.

[0023] like Figures 1 to 3 As shown, in this embodiment of the invention, the area ratio of the high heat flux density Chiplet vapor chamber structure based on partitioned design to the heat source is no greater than 10:1, which makes the space occupied by the high heat flux density Chiplet vapor chamber structure based on partitioned design in this embodiment of the invention smaller.

[0024] The high heat flux density Chiplet heat spreader structure based on partitioned design in this embodiment of the invention includes a metal shell 1, support columns 2, and capillary structures 3.

[0025] The metal casing 1 includes an upper metal casing 101 and a lower metal casing 102, which are connected to form a sealed space. The metal casing 1 has a liquid injection port communicating with the sealed space. The upper surface of the upper metal casing 101 is connected to a liquid cooling plate, and the lower surface of the lower metal casing 102 is connected to electronic components. The ratio of the heat dissipation area of ​​the upper surface to the heat-receiving area of ​​the lower surface of the upper metal casing 101 is generally less than 10:1, which makes the space occupied by the high heat flux density chiplet heat spreader structure based on the partitioned design of this embodiment of the invention smaller. The sealed space formed by the upper metal casing 101 and the lower metal casing provides space for the installation of the capillary structure 3. Figure 1The lower metal casing 102 is the hot end, and the upper metal casing 101 is the cold end. The hot end is connected to electronic components such as chips, and the cold end is connected to a liquid cooling plate. In this way, the lower metal casing 102 can efficiently absorb the heat generated by the electronic components such as chips, thus serving a heating function. The upper metal casing 101 can be connected to a liquid cooling plate or other final heat dissipation solution, thus serving a heat dissipation function. The liquid injection port can inject liquid working fluid into a sealed space through vacuum evacuation. The injection rate can be adjusted according to the actual working fluid and heat flow conditions, generally between 20% and 80%. It should be noted that heat can be directly transferred from the lower metal casing 1 to the upper metal casing 101.

[0026] Support columns 2 are distributed within the enclosed space and supported between the upper metal casing 101 and the lower metal casing 102. Support columns 2 increase structural strength, preventing failure of the high heat flux density chiplet vapor chamber structure based on a zoned design. Simultaneously, support columns 2 themselves have thermal conductivity, rapidly transferring heat absorbed by the lower metal casing 102 longitudinally to the upper metal casing. Capillary structures 3 are located within the enclosed space and include an upper capillary structure 301, a lower capillary structure 302, and a zoned capillary structure 303. The upper capillary structure 301 is fixed to the lower surface of the upper metal casing 101, and the lower capillary structure 302 is fixed to the upper surface of the lower metal casing 102, with a gap between them. The zoned capillary structure 303 connects the upper metal casing 101 and the lower metal casing 102, dividing the enclosed space into multiple evaporation chambers to meet the junction temperature requirements of different electronic components. The lower capillary structure 302 acts as an evaporator. The heat from electronic components, such as the core, is transferred to the lower capillary structure through the upper metal shell 101. The liquid in the lower metal shell 102 undergoes a gas-liquid phase change after being heated, generating steam and forming a gas-liquid interface. The steam accumulates in the steam chamber and transfers heat upward to the upper capillary structure 301. The upper capillary structure 301 acts as a condenser. Since the upper metal shell 101 is connected to the cooling plate, the upper capillary structure 301 is relatively cold. The heated steam condenses and re-condenses into liquid after encountering the relatively cold upper capillary structure 301. The heat is then transferred laterally through the upper capillary structure 301 and then along the surrounding area, preventing accumulation in the lower capillary structure 302. This process of phase change of the working fluid is repeated to achieve rapid heat conduction, greatly enhancing the thermal conductivity of the heat spreader. The partitioned capillary structure 303 provides support, preventing VC structure failure, and also offers significant thermal resistance. The vapor chamber is partitioned according to the junction temperature requirements of different electronic components beneath the upper metal casing 101, achieving enhanced heat conduction in a fixed direction in localized areas. This directs excessive heat to lower heat flow regions, preventing the formation of high-temperature zones and avoiding the influence of heat flow from other areas on lower junction temperature components, thus preventing them from exceeding their operating junction temperature and causing malfunction. This improves the overall thermal conductivity of the structure while avoiding thermal crosstalk, protecting the normal operation of electronic components with different junction temperatures. For example, as... Figure 3As shown, when the bottom of the high heat flux density chiplet heat sink structure based on partitioned design comes into contact with electrical components, some electronic components may have extremely high power consumption. Although they can meet the junction temperature requirements, the heat transfer will cause the temperature of the surrounding low-power electronic components to rise above their junction temperature, resulting in a "thermal crosstalk" phenomenon. In the high heat flux density chiplet heat sink structure based on partitioned design, the vapor chamber partitioned design is adopted according to the differences in the heat flux environment and junction temperature requirements of different electronic components. The vapor chamber corresponding to the upper part of the high power consumption component is separated, and the partitioned capillary structure 303 is used to prevent heat exchange between different vapor chambers, thereby reducing the heat transfer between electronic components with different junction temperatures.

[0027] The working principle of the high heat flux density chiplet heat exchanger structure based on partitioned design in this embodiment of the invention is as follows: After the high heat flux density chiplet heat exchanger structure based on partitioned design comes into contact with the heat flux transferred by the working electronic components, the heat is transferred to the upper metal shell 101, and then to the lower metal shell 102. The liquid in the lower capillary structure 302 undergoes a gas-liquid phase change after being heated, generating steam and forming a gas-liquid interface. The steam accumulates in the steam chamber and transfers heat upward to the upper capillary structure 301. Connected to the liquid cooling plate, the upper capillary structure 301 on the inner wall of the upper metal shell 101 is relatively cold. Heated vapor condenses and re-condenses into droplets upon encountering the cooler surface of the upper capillary structure 301. This droplets are then transferred laterally through the upper capillary structure 301 and diffused around the perimeter. Finally, they flow back to the lower capillary structure 302 through the vertically arranged capillary structures, preventing accumulation in the lower capillary structure 302. This process, utilizing the phase change of the working fluid, facilitates rapid heat conduction, transferring the high heat flux absorbed by the upper metal shell 101 to the upper metal shell 101. The upper metal shell 101 then transfers the heat to the liquid cooling plate. During this process, the metal shell 1 and support column 2 can directly transfer heat. Simultaneously, the partitioned capillary structure 303 further facilitates longitudinal and lateral heat transfer, redirecting excessively high heat to areas with lower heat flux, preventing the formation of high-temperature zones, and preventing lower junction temperature components from being affected by heat flux from other areas, thus exceeding their operating junction temperature and causing malfunction.

[0028] The high heat flux density chiplet heat exchanger structure based on partitioned design of this invention has the following advantages: First, by setting support columns 2 and partitioned capillary structures 303 between the upper metal shell 101, a good supporting effect is achieved, preventing the upper metal shell 101 from collapsing, making the structure reliable and less prone to failure; Second, by setting lower capillary structures 302 and upper capillary structures 301, the thermal conductivity of the heat exchanger is greatly enhanced, achieving rapid heat conduction. Simultaneously, the setting of support columns 2 further enhances the thermal conductivity of the heat exchanger; Third, due to the significant improvement in thermal conductivity, the high heat flux density chiplet heat exchanger structure of this invention has the following advantages: The area ratio of the high heat flux density chiplet heat exchanger structure to the heat source can be no more than 10:1, resulting in a small heat exchanger volume and small space occupation. Fourth, the vapor chamber location is partitioned through the partitioned capillary structure 303, thereby achieving enhanced heat conduction in a fixed direction in local areas. Excessive heat in local areas is specifically transferred to lower heat flux areas, ensuring that no high temperature areas appear. At the same time, it prevents lower junction temperature components from being affected by heat flux from other areas, thus preventing them from exceeding their operating junction temperature and causing malfunction. This not only improves the overall thermal conductivity of the structure, but also avoids the phenomenon of "thermal crosstalk", protecting the normal operation of electronic components with different junction temperatures.

[0029] In summary, the high heat flux density Chiplet heat spreader structure based on partitioned design in this embodiment of the invention can achieve rapid heat conduction in different directions, both horizontally and vertically. It can achieve a large thermal conductivity with a small heat dissipation / heat absorption area ratio, effectively suppress thermal crosstalk problems, and is suitable for cooling high heat flux electronic devices.

[0030] In some embodiments, the thickness of the high heat flux density chipplet heat sink structure based on partitioned design is no more than 3.5 mm, and the ratio of the heat dissipation area of ​​the upper surface to the heat-receiving area of ​​the lower surface is less than 10:1. This configuration enables rapid heat transfer of the chipplet within a small space based on the small heat dissipation / heat-receiving area ratio of the heat sink, solving the problem that existing heat sinks often require a large space, and is more suitable for the more compact design size of future chips.

[0031] In some embodiments, the metal outer shell 1 is a copper shell, which has good thermal conductivity and is easy to process and form. Specifically, the upper metal outer shell 101 and the lower metal outer shell 102 can be made of thermally conductive materials such as high-purity oxygen-free copper. High-purity oxygen-free copper provides high structural strength and good temperature resistance. It also has excellent thermal conductivity, is easy to process and form, and has high airtightness, effectively maintaining the internal environment. After fabrication, vacuum diffusion welding is required to ensure the sealing between the upper and lower structures.

[0032] In some embodiments, the support column 2 is a solid copper column. The solid copper column firstly provides strong mechanical support, ensuring the structural performance and effectively resisting atmospheric pressure when a vacuum is drawn inside the metal casing 1. Secondly, the high thermal conductivity of copper makes the support column 2 an additional longitudinal heat conduction channel, enabling the rapid upward transfer of locally accumulated heat, aiding in temperature equalization and further reducing overall thermal resistance.

[0033] In some embodiments, the capillary structure 3 further includes an annular capillary structure 304 disposed on the circumferential surface of the solid copper pillar. On the one hand, the solid copper pillar ensures the mechanical properties of the structure itself and reduces the large contact thermal resistance brought about by the capillary structure 3, so that the high heat flux density chiplet heat sink structure based on the partitioned design can maintain small deformation during subsequent high-temperature reflow soldering. On the other hand, the capillary copper porous structure of the annular capillary structure 304 enhances the reflux capability of the cooling medium inside the high heat flux density chiplet heat sink structure based on the partitioned design, shortening the flow path of the fluid reflux from the condensation section to the evaporation section.

[0034] In some embodiments, the partitioned capillary structure 303 is strip-shaped, which facilitates the partitioning design of different vapor chambers. The partitioned capillary structure 303 can be flexibly arranged according to the differences in power consumption, junction temperature, and geometric characteristics of the electronic components in contact with the lower surface, to isolate multiple partitions of the vapor chamber, preventing low-operating junction temperature components from being affected by higher heat flux and exceeding their operating temperature, thus avoiding thermal crosstalk problems.

[0035] In some embodiments, the capillary structure 3 is a porous structure fabricated using microgroove, powder sintering, foam metal, or wire mesh sintering methods. The porous structure ensures that coolant can be replenished to the heated area in a timely manner, achieving efficient heat conduction of the overall structure.

[0036] In some embodiments, the upper capillary structure 301 is welded to the upper metal shell 101; the lower capillary structure 302 is welded to the lower metal shell 102; the upper end of the partitioned capillary structure 303 is welded to the upper metal shell 101; and the lower end of the partitioned capillary structure 303 is welded to the lower metal shell 102. Welding ensures a strong, low-thermal-resistance connection between the capillary structure 3 and the metal shell 1.

[0037] In some embodiments, the upper metal shell 101 and the lower metal shell 102 are welded together; the upper end of the support column 2 is welded to the upper metal shell 101; and the lower end of the support column 2 is welded to the lower metal shell 102, or the support column 2 and the lower metal shell 102 are integrally formed. Welding ensures high vacuum and airtightness of the cavity. The welding or integral forming of the support column 2 with the shell creates a stable internal support. The integral forming process further reduces interfacial thermal resistance and improves thermal conductivity.

[0038] In some embodiments, the upper surface of the upper metal casing 101 is connected to the liquid cooling plate, and the lower surface of the lower metal casing 102 is connected to the chip via a thermally conductive material layer. The thermally conductive material layer is used to fill the gaps in the contact surfaces, eliminate air, significantly reduce contact thermal resistance, and ensure that heat can be efficiently transferred from the chip to the lower metal casing 102 and to the liquid cooling plate.

[0039] In some embodiments, the thermally conductive material layer is thermally conductive grease or thermally conductive silicone. Thermally conductive grease and thermally conductive silicone have good flowability, thermal conductivity, and stability.

[0040] In some embodiments, the vapor chamber is evacuated through the injection port before the coolant working medium is injected. The high vacuum environment lowers the boiling point of the working fluid, allowing it to boil and evaporate violently at the chip's operating temperature, which is the basis for achieving efficient phase change heat transfer. At the same time, the vacuum environment also avoids air obstructing the vapor flow, ensuring that heat can be transferred at the speed of sound.

[0041] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A high heat flux density chiplet vapor chamber structure based on a partitioned design, characterized in that, include: The metal casing includes an upper metal casing and a lower metal casing, which are connected to form a sealed space. The metal casing has a liquid injection port communicating with the sealed space. The upper surface of the upper metal casing is connected to a liquid cooling plate, and the lower surface of the lower metal casing is connected to electronic components. Support columns, which are distributed in the enclosed space and supported between the upper metal shell and the lower metal shell; The capillary structure is located in the enclosed space and includes an upper capillary structure, a lower capillary structure, and a partitioned capillary structure. The upper capillary structure is fixed to the lower surface of the upper metal shell, and the lower capillary structure is fixed to the upper surface of the lower metal shell. There is a gap between the upper capillary structure and the lower capillary structure. The partitioned capillary structure connects the upper metal shell and the lower metal shell, dividing the sealed space into multiple evaporation chambers to meet the junction temperature requirements of different electronic components.

2. The high heat flux density Chiplet vapor chamber structure based on partitioned design according to claim 1, characterized in that, The thickness of the high heat flux density Chiplet vapor chamber structure based on partitioned design is no more than 3.5 mm, and the ratio of the heat dissipation area of ​​the upper surface to the heat-receiving area of ​​the lower surface is less than 10:

1.

3. The high heat flux density Chiplet vapor chamber structure based on partitioned design according to claim 1, characterized in that, The metal outer shell is a copper shell.

4. The high heat flux density Chiplet vapor chamber structure based on partitioned design according to claim 1, characterized in that, The support column is a solid copper column.

5. The high heat flux density Chiplet vapor chamber structure based on partitioned design according to claim 4, characterized in that, The capillary structure also includes an annular capillary structure disposed on the circumferential surface of the solid copper column.

6. The high heat flux density Chiplet vapor chamber structure based on partitioned design according to claim 1, characterized in that, The partitioned capillary structure is strip-shaped.

7. The high heat flux density Chiplet vapor chamber structure based on partitioned design according to claim 1, characterized in that, The capillary structure is a porous structure processed by microgroove type, powder sintering type, foam metal type or wire mesh sintering type.

8. The high heat flux density Chiplet vapor chamber structure based on partitioned design according to claim 1, characterized in that, The upper capillary structure is welded and fixed to the upper metal shell; the lower capillary structure is welded and fixed to the lower metal shell; the upper end of the partitioned capillary structure is welded and fixed to the upper metal shell; and the lower end of the partitioned capillary structure is welded and fixed to the lower metal shell.

9. The high heat flux density Chiplet vapor chamber structure based on partitioned design according to claim 1, characterized in that, The upper metal shell and the lower metal shell are welded and fixed; the upper end of the support column is welded and fixed to the upper metal shell; the lower end of the support column is welded and fixed to the lower metal shell, or the support column and the lower metal shell are integrally formed.

10. The high heat flux density Chiplet vapor chamber structure based on partitioned design according to claim 1, characterized in that, The upper surface of the upper metal shell is connected to the liquid cooling plate, and the lower surface of the lower metal shell is connected to the core particle through a thermally conductive material layer.

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