Semiconductor structure and forming method thereof

By forming interconnect via structures on the first and second sides of the semiconductor structure, the undercut problem is solved, and the electrical connection performance of the interconnect via structure and the yield of the semiconductor structure are improved.

CN121532030APending Publication Date: 2026-02-13SEMICON MFG INT (BEIJING) CORP +1
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Patent Information

Application Number
CN202411096146.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-08-09
Publication Date
2026-02-13

AI Technical Summary

Technical Problem

Existing technologies suffer from undercutting issues when forming interconnect via structures, leading to a decrease in the yield of semiconductor structures.

Method used

By forming interconnect via structures from the first and second sides of a semiconductor structure, respectively, the aspect ratio of the first and second interconnect via structures is reduced through the combination of the first and second interconnect via structures, thereby reducing the probability of undercutting and improving the electrical connection performance of the interconnect via structures.

Benefits of technology

It effectively reduces the probability of defects such as voids or gaps in interconnect via structures, improves the morphological quality and electrical connection performance of interconnect via structures, and increases the yield of semiconductor structures.

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Abstract

A semiconductor structure and a method of forming the same, the semiconductor structure comprising: a first interconnection via structure embedded in a first substrate structure from a first surface; and the second interconnection through hole structure is embedded in the first substrate structure from the second surface, and the second interconnection through hole structure corresponds to the first interconnection through hole structure in position and is connected with the first interconnection through hole structure. Compared with a scheme of directly penetrating through the first substrate structure from the first surface to form the interconnection through hole structure, the interconnection through hole structure is formed by the second interconnection through hole structure and the first interconnection through hole structure, so that respective depth-to-width ratios of the first interconnection through hole structure and the second interconnection through hole structure are reduced; therefore, the probability that an undercut problem occurs in the first substrate structure is reduced, the probability that defects such as cavities or gaps exist in the first interconnection through hole structure and the second interconnection through hole structure is correspondingly reduced, the morphology quality of the first interconnection through hole structure and the second interconnection through hole structure is improved, and then the electrical connection performance of the interconnection through hole structures is improved.
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