Method for forming titanium nitride thin film and semiconductor device

By supplying a titanium-containing source gas and a reaction gas containing nitrogen and hydrogen to the substrate, and forming plasma in the processing space, the problem of metal contamination in titanium nitride films was solved, and high-quality film formation was achieved.

CN121532536APending Publication Date: 2026-02-13JUSUNG ENG
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Patent Information

Application Number
CN202480045838.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-07-06
Filing Date
2024-07-05
Publication Date
2026-02-13

AI Technical Summary

Technical Problem

Existing technologies suffer from metal contamination issues when forming titanium nitride films, particularly copper contamination caused by the reaction of byproducts with the chamber's metal materials.

Method used

A method is adopted to supply a titanium-containing source gas and a reaction gas containing nitrogen and hydrogen to a substrate, and to form a plasma in the processing space. A titanium nitride film is formed through a process cycle, including the alternating supply of source gas and reaction gas and plasma exposure steps, and the process temperature is controlled between 100°C and 400°C.

Benefits of technology

It effectively prevents metal contamination of titanium nitride films while maintaining the characteristics of resistivity, step coverage and film thickness, thus avoiding the occurrence of metal contamination.

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Abstract

The present disclosure relates to a method of forming a titanium nitride thin film and a semiconductor device, and more particularly, to a method of forming a titanium nitride thin film for forming a titanium nitride thin film on a substrate and a semiconductor device. A method of forming a titanium nitride thin film according to an embodiment of the present disclosure includes: placing a substrate in a processing space; supplying a titanium-containing source gas to the substrate; and supplying a reaction gas containing nitrogen and hydrogen to the substrate, in which the step of supplying the source gas and the step of supplying the reaction gas are sequentially performed, and when the reaction gas is supplied, plasma is formed in the processing space.
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Citation Information

Patent Citations

  • Deposition of titanium nitride film

    KR1020060107818A