Method of forming semiconductor device
By forming a contact etch stop layer and an interlayer dielectric in a semiconductor device, and implementing etching and silicide formation processes, the problem of metal deposition and removal on dielectric regions is solved, thereby improving the device's integration density and electrical connection reliability.
CN121548099APending Publication Date: 2026-02-17TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information
- Application Number
- CN202511540264.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2025-02-28
- Filing Date
- 2025-10-27
- Publication Date
- 2026-02-17
AI Technical Summary
Technical Problem
As the minimum component size of semiconductor devices decreases, challenges arise in efficiently removing metal deposits and forming contact plugs in dielectric regions, affecting the integration density and performance of devices.
Method used
By forming a contact etch stop layer and an interlayer dielectric, an etching process is performed to form contact openings, a silicide formation process is carried out, excess metal is selectively etched away, and finally a contact plug is formed to connect the silicide region.
Benefits of technology
This technology enables the efficient removal of unnecessary metal deposits in semiconductor devices, improving device integration density and performance, and enhancing the reliability of electrical connections.
✦ Generated by Eureka AI based on patent content.
Abstract
The method comprises the following steps: forming a source / drain region; forming a contact etch stop layer over the source / drain region; forming an interlayer dielectric over the contact etch stop layer; and performing an etching process to form contact openings in the interlayer dielectric and the contact etch stop layer. The source / drain region is exposed to the contact opening. A silicide formation process is performed to form a silicide region on a surface of the source / drain region. An etch process is performed to remove metal deposited on the dielectric region, where the dielectric region is exposed during the first silicide formation process. A contact plug is formed in the contact opening. The embodiment of the invention also relates to a method for forming the semiconductor device.
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