Mother pixel arrangement structure and micro display device

Abstract

The invention relates to a mother pixel arrangement structure and a micro display device. The mother pixel arrangement structure comprises a driving backboard and a plurality of sub-pixels. In the two sub-pixels located in different pixel layers, one sub-pixel in the upper pixel layer is internally provided with a light-transmitting hole to form a light-transmitting pixel, the periphery of the light-transmitting hole of the light-transmitting pixel forms a peripheral light-emitting area, the projection area, on the driving backboard, of the light-transmitting hole is a second projection area, the other sub-pixel in the lower pixel layer is an associated pixel, and the other sub-pixel in the lower pixel layer is a second light-emitting area; the projection area of the associated pixel on the driving backboard is a first projection area, and the first projection area and the second projection area at least partially coincide, so that at least part of light emitted by the associated pixel is emitted through the light-transmitting hole of the light-transmitting pixel. The invention further discloses a micro display device, the lighting effect and reliability of the display device can be effectively improved, and the light pattern of the display device can meet the requirements of different application scenes.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, in particular to a mother pixel arrangement structure and a micro display device. BACKGROUND

[0002] Micro display devices have small size, high resolution, high brightness and other characteristics, and can be applied to AR / VR devices, vehicle-mounted displays, medical detection, smart wear and many other fields. Micro display devices such as Micro-LED and Micro-OLED have been widely developed in recent years. In particular, Micro-LED display technology has the advantages of high efficiency, low power consumption, high integration and high stability, and is considered to be one of the most promising next-generation new display and light-emitting devices. In the field of micro display, in order to further ensure the pixel size and pixel density, there is a need for multi-color stacked integration when performing color display. LED devices in a multi-layer stacked form generally have a driving backboard (with a driving circuit) and a multi-layer structure above the driving backboard. Pixels are arranged in each layer structure. Each layer of pixels needs to establish an electrical connection with the driving backboard. The overall structure is complex, there is a large loss of light-emitting area for each pixel, and it is not convenient to adjust the light-emitting area, which cannot achieve the best light distribution effect, and the overall device has higher power consumption, which is not conducive to ensuring the reliability and stability of the LED display device. SUMMARY

[0003] Therefore, the technical problem to be solved by the present application is to improve the light efficiency and reliability of the micro display device in the prior art.

[0004] To solve the above technical problems, the present application provides a mother pixel arrangement structure, comprising,

[0005] a driving backboard;

[0006] a plurality of sub-pixels, at least two of the sub-pixels are located in different pixel layers respectively; all the pixel layers are sequentially stacked from bottom to top above the driving backboard;

[0007] Among the two sub-pixels located in different pixel layers, one sub-pixel in the upper pixel layer is internally provided with a light-transmitting hole to form a light-transmitting pixel, the periphery of the light-transmitting hole of the light-transmitting pixel forms a peripheral light-emitting area, the projection area of the light-transmitting hole on the driving backboard is a second projection area, the other sub-pixel in the lower pixel layer is an associated pixel, the projection area of the associated pixel on the driving backboard is a first projection area, and the first projection area and the second projection area at least partially overlap, so that the light emitted by the associated pixel at least partially passes through the light-transmitting hole of the light-transmitting pixel.

[0008] In an embodiment of the present application, the overlapping area of the first projection area and the second projection area is not less than 1 / 2 of the area of the first projection area.

[0009] In an embodiment of the present application, the first projection area is completely inside the second projection area.

[0010] In an embodiment of the present application, the light-transmitting pixel and the associated pixel are coaxially arranged.

[0011] In an embodiment of the present application, at least two associated pixels in different pixel layers are both below the same light-transmitting hole of the light-transmitting pixel.

[0012] In an embodiment of the present application, the light-transmitting pixel and at least one associated pixel below are arranged in different axes.

[0013] In an embodiment of the present application, the same light-transmitting pixel is provided with a plurality of light-transmitting holes, and the associated pixels and the light-transmitting holes of the light-transmitting pixel are in one-to-one correspondence.

[0014] In an embodiment of the present application, the periphery of the light-transmitting pixel is surrounded by a peripheral air gap.

[0015] In an embodiment of the present application, the periphery of the light-transmitting pixel is further surrounded by a partition wall, and the partition wall between the light-transmitting pixel and the periphery has the peripheral air gap.

[0016] In an embodiment of the present application, the inside of the light-transmitting pixel is provided with an inner air gap.

[0017] In an embodiment of the present application, the light-emitting colors of at least two sub-pixels in different pixel layers are different.

[0018] The present application also discloses a micro display device, characterized in comprising at least one mother pixel, wherein each of the mother pixels comprises a plurality of sub-pixels, and each of the mother pixels adopts the mother pixel arrangement structure according to any one of the above.

[0019] In an embodiment of the present application, the bottom end of each of the plurality of sub-pixels in different pixel layers in the mother pixel is respectively electrically connected to a corresponding first type of electrode contact, and the top ends of the plurality of sub-pixels are interconnected through a top conductive layer and then electrically connected to a corresponding second type of electrode contact to form a top common electrode structure, wherein the polarities of the first type of electrode contact and the second type of electrode contact are opposite.

[0020] In one embodiment of the present application, in the top co- pole structure, in two sub-pixels of different pixel layers, one sub-pixel is the light-transmitting pixel, and the other sub-pixel is the associated pixel, the bottom end of the light-transmitting pixel is electrically connected to the corresponding first type of electrode contact through a non-co-pole conductive member, and the non-co-pole conductive member connected to the light-transmitting pixel is located in the periphery of the associated pixel.

[0021] In one embodiment of the present application, the periphery of the associated pixel has an insulating filling area, and the non-co-pole conductive member connected to the light-transmitting pixel passes through the insulating filling area.

[0022] In one embodiment of the present application, the periphery of the associated pixel has a compound semiconductor area, and the non-co-pole conductive member connected to the light-transmitting pixel passes through the compound semiconductor area.

[0023] In one embodiment of the present application, the compound semiconductor area is annular, and the associated pixel is surrounded inside the corresponding compound semiconductor area.

[0024] In one embodiment of the present application, the periphery of the associated pixel is surrounded by a plurality of compound semiconductor areas, and the plurality of compound semiconductor areas are distributed in a circumferential direction.

[0025] In one embodiment of the present application, the periphery of the associated pixel is further surrounded by a peripheral air gap, and the peripheral air gap is located between the associated pixel and the compound semiconductor area of the periphery.

[0026] In one embodiment of the present application, in the top co- pole structure, at least one pixel layer is a two-type pixel layer, the bottom end of the sub-pixel in the two-type pixel layer is electrically connected to the corresponding first type of electrode contact through a bottom conductive layer, and the bottom surface of the sub-pixel in the two-type pixel layer is completely covered by the bottom conductive layer.

[0027] In one embodiment of the present application, the pixel layer where the light-transmitting pixel is located is the two-type pixel layer, and the bottom end of the light-transmitting pixel in the two-type pixel layer is electrically connected to the corresponding non-co-pole conductive member through a bottom conductive layer.

[0028] In one embodiment of the present application, the bottom conductive layer adopts a metal bonding layer, a first peripheral metal fence and a first internal metal fence are formed above the bottom conductive layer of the light-transmitting pixel in the two-type pixel layer, the periphery of the light-transmitting pixel in the two-type pixel layer is surrounded by the first peripheral metal fence, and the inside of the light-transmitting hole is surrounded by the first internal metal fence.

[0029] In an embodiment of the present application, at least one of the pixel layers is a first type of pixel layer, and the bottom ends of the sub-pixels in the first type of pixel layer are each electrically connected to a corresponding first type of electrode contact through an independent conductive block corresponding to the first type of electrode contact; wherein the conductive block has an electrical contact area for electrical connection with the bottom end of the corresponding sub-pixel in the first type of pixel layer, and the area of the electrical contact area is smaller than the area of the bottom surface of the corresponding sub-pixel in the first type of pixel layer.

[0030] In an embodiment of the present application, the bottom ends of the sub-pixels in the first type of pixel layer are electrically connected through a metal reflective layer and the corresponding conductive block.

[0031] In an embodiment of the present application, the pixel layer in which the light-transmitting pixel is located is the first type of pixel layer, and the bottom end of the light-transmitting pixel in the first type of pixel layer is electrically connected to the corresponding non-antipodal conductive member through the metal reflective layer and the conductive block in sequence.

[0032] In an embodiment of the present application, a peripheral reflective portion and an inner reflective portion are formed above the metal reflective layer of the light-transmitting pixel in the first type of pixel layer, the peripheral reflective portion surrounds the light-transmitting pixel in the first type of pixel layer, and the inner reflective portion surrounds the inside of the light-transmitting hole.

[0033] In an embodiment of the present application, in the top antipodal structure, the driving backplane is divided into a display area, and all the parent pixels form a pixel array, the projections of the pixel array on the driving backplane are located inside the display area, the second type of electrode contact is arranged inside the display area, and / or the second type of electrode contact is arranged outside the display area, and the second type of electrode contact is electrically connected to the top conductive layer of the top ends of the plurality of sub-pixels through an antipodal conductive member.

[0034] In an embodiment of the present application, in the top antipodal structure, the top ends of the sub-pixels in different pixel layers in the parent pixel are each independently provided with the top conductive layer without sharing, and the top conductive layer in the same layer pixel layer is located at the upper part of the electrically connected sub-pixel.

[0035] In an embodiment of the present application, in the top antipodal structure, the top ends of the sub-pixels in at least two different pixel layers in the parent pixel are each independently provided with the top conductive layer without sharing, and the antipodal conductive member includes an interconnecting conductive portion, and the top conductive layers of adjacent two are interconnected through the interconnecting conductive portion to achieve electrical connection.

[0036] In one embodiment of the present application, in the top common electrode structure, at least two of the sub-pixels in the mother pixel share one of the top conductive layers, and the sub-pixels sharing the top conductive layer are located in different pixel layers, respectively.

[0037] In one embodiment of the present application, in the top common electrode structure, the bottom end of the common electrode conductive member is in direct contact with the corresponding second type of electrode contact.

[0038] In one embodiment of the present application, the top end of each of the plurality of sub-pixels in the mother pixel located in different pixel layers is respectively electrically connected to the corresponding second type of electrode contact through a top conductive layer, and the bottom ends of the plurality of sub-pixels are electrically connected to the first type of electrode contact after being conductively interconnected to form a bottom common electrode structure, wherein the polarities of the first type of electrode contact and the second type of electrode contact are opposite.

[0039] In one embodiment of the present application, in the bottom common electrode structure, among the two sub-pixels located in different pixel layers, one sub-pixel is the light-transmitting pixel and the other sub-pixel is the associated pixel, the bottom end of the light-transmitting pixel and the bottom end of the associated pixel are electrically connected through a common electrode conductive member, and the common electrode conductive member connected to the light-transmitting pixel is located in the periphery of the associated pixel.

[0040] In one embodiment of the present application, the periphery of the associated pixel has an insulating filling area, and the common electrode conductive member connected to the light-transmitting pixel passes through the insulating filling area.

[0041] In one embodiment of the present application, the periphery of the associated pixel has a compound semiconductor area, and the common electrode conductive member connected to the light-transmitting pixel passes through the compound semiconductor area.

[0042] In one embodiment of the present application, the top conductive layer of the associated pixel is electrically connected to the corresponding second type of electrode contact through a non-common electrode conductive member, and the top conductive layer of the top conductive layer of the associated pixel is electrically connected to the corresponding non-common electrode conductive member after passing through the light-transmitting hole of the light-transmitting pixel.

[0043] In one embodiment of the present application, in the bottom common electrode structure, the driving backplane is divided into a display area, and all the mother pixels form a pixel array, the projection of the pixel array on the driving backplane is located inside the display area, and the first type of electrode contact is arranged inside the display area and / or the first type of electrode contact is arranged outside the display area.

[0044] In one embodiment of the present application, in the bottom co-polar structure, the top conductive layer is arranged separately on the top end of the sub-pixel in the parent pixel located in different pixel layers, and the top conductive layer in the same layer pixel layer is located on the upper part of the electrically connected sub-pixel.

[0045] In one embodiment of the present application, at least one of the top conductive layers is electrically connected with a metal reinforcing member which is located above or below the electrically connected top conductive layer.

[0046] In one embodiment of the present application, the top end of the sub-pixel is in contact with the electrically connected top conductive layer, or the top end and at least part of the sidewall of the sub-pixel are in contact with the electrically connected top conductive layer.

[0047] In one embodiment of the present application, the upper part of the uppermost sub-pixel is provided with a lens which covers at least one of the sub-pixels in the parent pixel.

[0048] The above technical solutions of the present application have the following advantages compared with the prior art:

[0049] The parent pixel arrangement structure and the micro display device of the present application are beneficial to reduce the shielding of the light emitting surface of the lower sub-pixel, ensure the effective light emitting area of the lower sub-pixel, reduce energy waste, and thus realize the best light distribution effect, effectively improve the light efficiency and reliability of the display device, and also make the light type meet the needs of different application scenarios. BRIEF DESCRIPTION OF DRAWINGS

[0050] In order to make the content of the present application more easily understood, the present application will be further described in detail below according to specific embodiments of the present application and in conjunction with the drawings.

[0051] Figure 1 is a structural schematic diagram of a first micro display device of the present application (two-layer structure);

[0052] Figure 2 is Figure 1 is a schematic diagram of the arrangement of each sub-pixel in the micro display device shown in (top view);

[0053] Figure 3 is Figure 1 is a local enlarged view of M1 in

[0054] Figure 4 is a structural schematic diagram of a second micro display device of the present application (three-layer structure);

[0055] Figure 5 is Figure 4 is a schematic diagram of the arrangement of each sub-pixel in the micro display device shown in (top view);

[0056] Figure 6 is a structural schematic diagram of a third micro display device of the present application;

[0057] Figure 7 is a structural schematic diagram of a fourth micro display device of the present application;

[0058] Figure 8 is a structural schematic diagram of a fifth micro display device of the present application;

[0059] Figure 9 is a structural schematic diagram of a sixth micro display device of the present application; Figure 8

[0060] Figure 10 is a structural schematic diagram of a seventh micro display device of the present application (with metal reinforcement);

[0061] Figure 11 is a structural schematic diagram of an eighth micro display device of the present application;

[0062] Figure 12 is a structural schematic diagram of a ninth micro display device of the present application;

[0063] Figure 13 is a structural schematic diagram of a tenth micro display device of the present application;

[0064] Figure 14 is a structural schematic diagram of an eleventh micro display device of the present application;

[0065] Figure 15 is a structural schematic diagram of a twelfth micro display device of the present application; Figure 14

[0066] Figure 16 is a distribution schematic diagram (top view) of a display area in the present application;

[0067] Figure 17 is a schematic diagram (top view) of a peripheral electrode contact area and an interface connection in the present application;

[0068] Figure 18 is a structural schematic diagram of a first layer pixel layer independently setting a top conductive layer;

[0069] Figure 19 is another structural schematic diagram of a first layer pixel layer independently setting a top conductive layer;

[0070] Figure 20 is a structural schematic diagram of a thirteenth micro display device of the present application; Figure 19

[0071] Figure 21 is a structural schematic diagram of a fourteenth micro display device of the present application;

[0072] Figure 22 ​​​Fig. 12 is a schematic diagram of the structure of a twelfth micro display device according to the present application;

[0073] Figure 23 Fig. 13 is a schematic diagram of the structure of a thirteenth micro display device according to the present application;

[0074] Figure 24 Fig. 14 is a schematic diagram of the structure of a micro display device according to the present application with a lens;

[0075] Figure 25 Fig. 15 is another schematic diagram of the structure of a micro display device according to the present application with a lens;

[0076] Legend of the drawings:

[0077] 10, drive backplane; 101, first type of electrode contact; 102, second type of electrode contact; 103, display area; 104, peripheral electrode contact area; 105, interface;

[0078] 20, first layer of pixel layers;

[0079] 30, second layer of pixel layers;

[0080] 40, third layer of pixel layers;

[0081] 50, sub-pixel; 501, light-transmitting hole; 502, peripheral light-emitting area; 503, channel;

[0082] 60, top conductive layer;

[0083] 70, bottom conductive layer;

[0084] 80, non-omnibus conductive member;

[0085] 90, omnibus conductive member; 901, interconnecting conductive portion;

[0086] 110, insulating filling area;

[0087] 120, compound semiconductor area;

[0088] 130, first inner peripheral metal fence; 140, first peripheral metal fence; 150, first insulating layer; 160, second insulating layer; 180, bottom ohmic contact layer; 190, metal reinforcing member; 210, peripheral air gap; 220, inner peripheral air gap; 250, lens; 260, partition wall; 270, conductive block; 2701, electrical contact area; 280, metal reflective layer; 2801, peripheral reflective portion; 2802, inner peripheral reflective portion; DETAILED DESCRIPTION

[0089] The present application will be further described below with reference to the drawings and specific examples, so that those skilled in the art can better understand the present application and implement it. It is obvious that the described examples are only a part of the embodiments of the present disclosure, but not all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative, but not as any limitation on the present disclosure and its application or use.

[0090] In the description of the present application, it should be understood that the terms "vertical", "upper", "lower", "top", "side", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise specified, the meaning of "a plurality of" is two or more.

[0091] In the description of the present application, it should be noted that, unless otherwise specified and limited, the terms "mounting", "connection", "connection" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integral connection; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through intermediate medium, or the internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0092] The LED device in the conventional technology adopts a multi-layer stacking form, the overall structure is complex, the light emitting area of each pixel has a large loss, which is not conducive to the adjustment of the light emitting area, and the optimal light distribution effect cannot be achieved, and the overall device has higher power consumption, which is not conducive to ensuring the reliability and stability of the LED display device. In view of this, the present application provides a micro display device to improve the above problems, so as to better ensure the photoelectric performance and reliability of the LED display device.

[0093] It should be noted that the sub-pixel in the present application is generally etched from a compound semiconductor layer, and the compound semiconductor layer refers to a layer structure with a certain thickness prepared from a compound semiconductor material. The compound semiconductor generally refers to a compound formed by two or more elements, including crystalline inorganic compounds (such as III-V group, II-VI group compound semiconductors) and oxide semiconductors. The compound semiconductor involved in the present application is mainly a light emitting diode epitaxial material, such as an InGaN ternary material system or an AlGaInP quaternary material system, and its light emitting wavelength can cover the full wave band from ultraviolet, visible light and infrared, and its substrate material can be GaN, Si, SiC, sapphire, GaAs, InP, etc.

[0094] Taking the field of Micro-LED as an example, some compound semiconductor materials involved in the present application are as shown in Table 1. In some actual applications, the film layer of the compound semiconductor will be more complex, or there will be a case of cross use of materials. The typical compound semiconductor mainly includes P-type semiconductor material, N-type semiconductor material, and MQW active quantum well and other functional layers (barrier layer, confinement layer, waveguide layer, buffer layer, etc.) sandwiched therebetween.

[0095] Table 1: Compound semiconductor film layer material table

[0096]

[0097] The structure of the micro display device of the present application will be further described below in combination with the following specific embodiments.

[0098] Embodiment one

[0099] Referring to Figure 1 The embodiment discloses a multi-layer stacked micro display device, which includes at least one parent pixel, each parent pixel has a plurality of (two or more) sub-pixels. The structure of the above micro display device will be specifically explained below, and the structure shown in the drawing only shows the case of one parent pixel. When there are a plurality of parent pixels, the structure inside each parent pixel is basically the same.

[0100] The micro display device in the present application has Z direction, X direction and Y direction, and the three directions are perpendicular to each other. The Z direction is the stacking direction of the sub-pixels of each layer, that is, the up-down direction, and can also be understood as the direction away from / close to the driving backboard. The "height" or "up / down" or "top / bottom" is along the Z direction.

[0101] In the present application, the "bottom end of the sub-pixel" refers to the end of the sub-pixel close to the driving backboard, and the "top end of the sub-pixel" refers to the end of the sub-pixel away from (far from) the driving backboard.

[0102] It should be noted that the sectional views in the drawings of the present application in the XZ plane can be a schematic view after cutting a single section, or a schematic view after cutting a plurality of sections in combination, to show the connection of different electrode contacts.

[0103] The micro display device in the embodiment, LED display device, includes a parent pixel, the parent pixel includes a driving backboard 10 and a plurality of sub-pixels 50.

[0104] Wherein, the driving backboard 10 is an element with a driving circuit, the first type electrode contact 101 and the second type electrode contact 102 are the lead terminals of the driving circuit, used for electrically connecting the driving circuit and the sub-pixel 50, the sub-pixel 50 is a light emitting element, through the electrical connection of the driving backboard 10 and the sub-pixel 50, the connection of the sub-pixel and the driving circuit is realized, so that the sub-pixel can be driven to emit light, and each sub-pixel can be individually driven to emit light independently.

[0105] The driving backboard 10 includes but is not limited to a CMOS (Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor) driving backboard.

[0106] The driving backboard 10 can be provided with the first type electrode contact 101 and the second type electrode contact 102, the polarities of the first type electrode contact 101 and the second type electrode contact 102 are opposite, one of which is an anode, and the other is a cathode; it can be understood that, in order to prevent short circuit, the first type electrode contact 101 and the second type electrode contact 102 need to be insulated and isolated; through the setting of the first type electrode contact 101 and the second type electrode contact 102, the driving backboard 10 can be electrically connected with the sub-pixel 50, so as to control the light emission of each sub-pixel 50 by using the driving backboard 10.

[0107] It can be understood that the two ends of the sub-pixel 50 along the Z direction are the bottom end and the top end respectively; the bottom end and the top end of the sub-pixel 50 are two ends with opposite polarities, the sub-pixel 50 includes a P-type semiconductor layer, an active layer and an N-type semiconductor layer arranged in sequence along the Z direction, the active layer is used for emitting light, wherein the top end of the sub-pixel 50 is the end where the N-type semiconductor layer is located (or the end where the P-type semiconductor layer is located-anode), and the bottom end is the end where the P-type semiconductor layer is located (or the end where the N-type semiconductor layer is located-cathode), which need to be connected to electrode contacts with different polarities respectively.

[0108] Referring to Figures 1-2 The micro display device in the embodiment includes a driving backboard 10 and two pixel layers, each pixel layer is provided with a sub-pixel 50, and at least two sub-pixels are located in different pixel layers; all pixel layers are stacked from bottom to top above the driving backboard 10;

[0109] The parent pixel in the micro display device comprises a plurality of sub-pixels 50, which adopts a parent pixel arrangement structure comprising a driving back plate 10 and a plurality of sub-pixels 50, and the sub-pixels with different light emitting colors are respectively located in different pixel layers;

[0110] Among the two sub-pixels 50 in different pixel layers, one sub-pixel 50 in the upper pixel layer is internally provided with a light transmission hole 501 to form a light transmission pixel, the periphery of the light transmission hole 501 of the light transmission pixel forms a peripheral light emitting area 502, the projection area of the light transmission hole 501 on the driving back plate 10 is a second projection area, the other sub-pixel 50 in the lower pixel layer is an associated pixel, the projection area of the associated pixel on the driving back plate 10 is a first projection area, the first projection area and the second projection area at least partially overlap, so that the light emitted by the associated pixel is at least partially emitted out of the light transmission hole 501 of the light transmission pixel without being blocked, the effective light emitting area of the lower sub-pixel 50-associated pixel is increased, and the best light distribution effect is facilitated. As shown in Figure 1 The dashed arrow direction in the figure is the light emitting direction of the first layer sub-pixel 50-associated pixel.

[0111] It can be understood that the inside of the light transmission hole 501 in the light transmission pixel can be filled with transparent material, as long as the light emitted by the lower sub-pixel can be emitted out of the light transmission hole.

[0112] For example, as shown in the structure shown in Figure 1 The structure has two pixel layers, the first layer pixel layer 20 and the second layer pixel layer 30 from bottom to top, wherein each of the first layer pixel layer 20 and the second layer pixel layer 30 has one sub-pixel 50, the sub-pixel 50 in the first layer pixel layer 20 is an associated pixel, and the sub-pixel 50 in the second layer pixel layer 30 is a light transmission pixel provided with a light transmission hole 501, the light emitted by the lower associated pixel is at least partially emitted out of the light transmission hole 501 of the upper light transmission pixel, thereby minimizing the blocking of the light emitting surface of the lower sub-pixel 50, facilitating the improvement of the light emitting intensity of the whole device, and thereby improving the efficiency.

[0113] Alternatively, for example, as shown in Figure 4The structure shown has three layers of pixel layers, from bottom to top, the first layer of pixel layer 20, the second layer of pixel layer 30 and the third layer of pixel layer 40, wherein the first layer of pixel layer 20, the second layer of pixel layer 30 and the third layer of pixel layer 40 each have a sub-pixel 50, the sub-pixel 50 in the third layer of pixel layer 40 is a light-transmitting pixel with a light-transmitting hole 501, the sub-pixel 50 in the first layer of pixel layer 20 is an associated pixel, and the sub-pixel 50 in the second layer of pixel layer 30 is also an associated pixel. For the first layer of pixel layer 20 and the third layer of pixel layer 40, the light emitted by the associated pixel in the first layer of pixel layer 20 at least partially passes through the light-transmitting hole 501 of the light-transmitting pixel in the third layer of pixel layer 40; for the second layer of pixel layer 30 and the third layer of pixel layer 40, the light emitted by the associated pixel in the second layer of pixel layer 30 at least partially passes through the light-transmitting hole 501 of the light-transmitting pixel in the third layer of pixel layer 40; thereby minimizing the obstruction of the light-emitting surface of the lower sub-pixel 50, which is beneficial to improve the light-emitting intensity of the overall device, thereby improving the efficiency; as Figure 4 As shown, the dashed arrow direction in the figure is the light-emitting direction of the sub-pixel 50-associated pixel of the first layer and the second layer.

[0114] The light emitted by the lower associated pixel at least partially passes through the light-transmitting hole 501 of the upper light-transmitting pixel, thereby minimizing the obstruction of the light-emitting surface of the lower sub-pixel, which is beneficial to improve the light-emitting intensity of the overall device, thereby improving the efficiency.

[0115] It can be understood that the "peripheral light-emitting area" in the embodiment is the area that can emit light after being powered on. The so-called "associated pixel" refers to the sub-pixel associated with the "light-transmitting pixel", and the light emitted by the associated pixel at least partially passes through the light-transmitting hole of the associated light-transmitting pixel.

[0116] In addition, in the embodiment, the projection area of the sub-pixel 50 on the driving backboard refers to the overall area surrounded by the outer edge of the projection, for example, the projection area of the sub-pixel 50-light-transmitting pixel with a light-transmitting hole on the driving backboard 10 refers to the overall area surrounded by the outer edge of the projection, including the area where the light-transmitting hole is located. The projection area of the associated pixel on the driving backboard is the first projection area, and the "first projection area" actually refers to the overall area surrounded by the outer edge of the projection.

[0117] The structure above opens a light transmission hole 501 in the upper sub-pixel 50 to form a light transmission pixel, and the lower sub-pixel 50-associated pixel is located below the light transmission hole 501 of the light transmission pixel, so that the light emitted by the lower associated pixel can be emitted upward through the light transmission hole 501 of the upper light transmission pixel, thereby effectively reducing the shielding of the light emission area of the lower sub-pixel, increasing the effective light emission area of the lower sub-pixel, and facilitating the realization of the best light distribution effect; At the same time, it also reduces the problem of light shielding and light absorption of the lower sub-pixel by the metal bonding layer when the metal bonding layer is arranged at the bottom end of the upper sub-pixel, thereby reducing the energy waste of the lower sub-pixel 50 and reducing the phenomenon of excessive device temperature due to energy loss converted into heat, thereby effectively increasing the light efficiency and reliability of the display device.

[0118] In addition, the sub-pixel distribution structure of the above structure is also more conducive to flexibly designing the light emission area of each layer of sub-pixel to make up for the short board of too bright or too dark light intensity of a certain sub-pixel; For example, by adjusting the size and position of the light transmission hole in the light transmission pixel, the light emission position and size of the lower associated pixel can be flexibly adjusted, thereby realizing the adjustment of the light emission area and light emission area, which can be applied to different application requirements and is more convenient for adjusting the light emission area; The above structure is also conducive to regulating the position of the sub-pixel, so that the lower sub-pixel is arranged at different positions of the upper sub-pixel, thereby regulating the light type of the multi-color stacked device to meet the different needs of XR (extended reality) application;

[0119] The "upper pixel layer" in the embodiment refers to each pixel layer located above the lowermost pixel layer, and the "lower pixel layer" is opposite to the "upper pixel layer" and refers to the pixel layer located below the upper pixel layer. Similarly, the "upper sub-pixel" refers to each sub-pixel located above the lowermost sub-pixel, and the "lower sub-pixel" is opposite to the "upper sub-pixel" and refers to the sub-pixel located below the upper sub-pixel.

[0120] In some embodiments, the projection area of the light transmission hole 501 on the driving back plate 10 is a second projection area, the projection area of the associated pixel on the driving back plate 10 is a first projection area, and the overlapping area of the first projection area and the second projection area is not less than 1 / 3 of the area of the first projection area. For example, the overlapping area of the first projection area and the second projection area is not less than 1 / 2 of the area of the first projection area, or the overlapping area of the first projection area and the second projection area is not less than 2 / 3 of the area of the first projection area, etc.

[0121] Further, the first projection area is completely located inside the second projection area, thereby minimizing the shielding of the lower sub-pixel by the upper sub-pixel, so that the light emitted upward by the lower sub-pixel can be emitted from the light transmission hole of the upper sub-pixel, thereby ensuring better light emission effect.

[0122] In some embodiments, the inside of the associated pixel can be provided with a hole 503, or can not be provided with a hole 503. For example, Figure 1 In the two-layer structure shown, the sub-pixel 50 in the first layer pixel layer 20 is an associated pixel, and the inside of the associated pixel is not provided with a hole 503. Figure 2 In the three-layer structure shown, the sub-pixel 50 in the first layer pixel layer 20 is an associated pixel, and the inside of the associated pixel is provided with a hole 503; the sub-pixel 50 in the second layer pixel layer 30 is also an associated pixel, and the inside of the associated pixel is not provided with a hole 503.

[0123] In some embodiments, the light-transmitting pixel and the associated pixel are coaxially arranged.

[0124] For example, refer to Figures 1-2 , wherein, Figure 1 may be Figure 2 The cross-sectional view along A-A of the structure in FIG. 1C. The structure is a two-layer structure, the first layer pixel layer 20 is provided with a sub-pixel 50, which is an associated pixel; the second layer pixel layer 30 is provided with another sub-pixel 50, which is a light-transmitting pixel; the associated pixel is located below the light-transmitting hole 501, and the light-transmitting pixel above is coaxially arranged (the axes coincide). Figure 2 In FIG. 1C, the sub-pixel 50 in the first layer pixel layer 20 is denoted as i1, which is an associated pixel; the first type of electrode contact 101 connected thereto is denoted as c1; the sub-pixel 50 in the second layer pixel layer 30 is denoted as i2, which is a light-transmitting pixel; the first type of electrode contact 101 connected thereto is denoted as c2.

[0125] In some embodiments, at least two associated pixels located in different pixel layers are both located below the same light-transmitting hole 501 of the light-transmitting pixel, so that the light emitted by the multiple associated pixels is emitted from the same light-transmitting hole 501. This way can make the overall structure more compact, and is more conducive to arrangement and processing.

[0126] For example, refer to Figures 4-5 , Figure 5 is Figure 4 The top view position schematic diagram of each sub-pixel of the structure shown in FIG. 1D. The structure is a three-layer structure, the first layer pixel layer 20 is provided with a sub-pixel 50, which is an associated pixel; the second layer pixel layer 30 is provided with a sub-pixel 50, which is also an associated pixel; the third layer pixel layer 30 is provided with a sub-pixel 50, which is a light-transmitting pixel; the associated pixels of the first layer and the second layer are both located below the same light-transmitting hole 501 above; and the light-transmitting pixel above is coaxially arranged with the two associated pixels below. Figure 5The sub-pixel 50 in the first pixel layer 20 is denoted as i1, which is an associated pixel in this case, and the first electrode contact 101 connected thereto is denoted as c1; the sub-pixel 50 in the second pixel layer 30 is denoted as i2, which is an associated pixel in this case, and the first electrode contact 101 connected thereto is denoted as c2; and the sub-pixel 50 in the third pixel layer 40 is denoted as i3, which is a light-transmitting pixel in this case, and the first electrode contact 101 connected thereto is denoted as c3.

[0127] In some embodiments, the light-transmitting pixel is arranged coaxially with the at least one associated pixel below.

[0128] In some embodiments, the light-transmitting pixel is arranged coaxially with the at least one associated pixel below.

[0129] In some embodiments, the light-transmitting pixel is arranged coaxially with the at least one associated pixel below.

[0130] In some embodiments, the light-transmitting pixel is arranged coaxially with the at least one associated pixel below.

[0131] In some embodiments, the shape of each sub-pixel 50 is not limited and can be circular, oval, polygonal (triangular, trapezoidal, rectangular, etc.), or other shapes.

[0132] For example, the sub-pixel 50 includes, in order from top to bottom, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer; and the thickness of the sub-pixel 50 (the distance between the upper surface of the N-type semiconductor layer and the lower surface of the P-type semiconductor layer) is 0.1 um to 5 um.

[0133] In some embodiments, referring to Figures 8-9 The periphery of the light-transmitting pixel is surrounded by a peripheral air gap 210.

[0134] The peripheral air gap 210 can be annular, such as a circular ring, a square ring, etc., and the specific shape is not limited.

[0135] By providing the air gap, the total reflection phenomenon occurs when light is incident from the high-refractive sub-pixel corresponding film layer to the low-refractive air gap, the optical angle is modulated, the light-emitting divergence angle is reduced, the light is collimated, the display brightness of the display device is improved, and the light efficiency is improved.

[0136] Further, the periphery of the light-transmitting pixel is also surrounded by a partition wall 260, and the light-transmitting pixel and the partition wall 260 of the periphery have a peripheral air gap 210.

[0137] The partition wall 260 is made of a compound semiconductor material.

[0138] In some embodiments, as shown in FIG. 1, the inner periphery of the light-transmitting pixel is surrounded by an inner air gap 220. Figure 10

[0139] In particular, as shown in FIG. 1, the inner air gap 220 can surround the periphery of the light-transmitting hole 501 in the light-transmitting pixel. Figure 10

[0140] Alternatively, the inner air gap 220 can be arranged inside a transparent medium filled in the light-transmitting hole 501.

[0141] The inner air gap 220 can have a ring shape, such as a circular ring, a square ring, etc., and the specific shape is not limited.

[0142] In some embodiments, as shown in FIG. 1, the periphery of the associated pixel is surrounded by an outer air gap 210. Figure 7

[0143] The embodiment also discloses a micro display device, as shown in FIG. 2, which comprises at least one parent pixel, and each parent pixel comprises a plurality of sub-pixels 50. Figures 1-5 In some embodiments, the bottom end of each of the plurality of sub-pixels 50 in the parent pixel is respectively electrically connected to a corresponding first electrode contact 101, and the top end of the plurality of sub-pixels 50 is electrically connected to a corresponding second electrode contact 102, wherein the polarities of the first electrode contact 101 and the second electrode contact 102 are opposite, one being an anode and the other being a cathode.

[0144] The first electrode contact 101 and the second electrode contact 102 are arranged on the driving backboard 10 as electrode terminals of the internal driving circuit of the driving backboard.

[0145] In some embodiments, as shown in FIG. 1, the periphery of the associated pixel has an insulating filling area 110, and the top end of an interconnecting conductive member is electrically connected to the top end or the bottom end of the light-transmitting pixel.

[0146] Figure 1 The insulating filling area 110 can be made of a transparent filling material.

[0147] In some other embodiments, as shown in FIG. 1, the periphery of the associated pixel has an insulating filling area 110, and the top end of an interconnecting conductive member is electrically connected to the top end or the bottom end of the light-transmitting pixel.

[0148] In some other embodiments, as shown in FIG. 1, the periphery of the associated pixel has an insulating filling area 110, and the top end of an interconnecting conductive member is electrically connected to the top end or the bottom end of the light-transmitting pixel. Figure 6 ​​​​The periphery of the associated pixel has a compound semiconductor region 120, the inside of the compound semiconductor region 120 is provided for the interconnection conductive member to pass through, and the top end of the interconnection conductive member is electrically connected to the top end or bottom end of the light-transmitting pixel. In this way, more compound semiconductor material can be reserved, and the compound semiconductor material has good heat conduction, which is beneficial to improve the heat dissipation effect of the whole device.

[0149] The material of the interconnection conductive member can be metal such as aluminum (Al), copper (Cu), tungsten (W), and corresponding adhesion layers or barrier layers thereof, such as titanium (Ti), titanium nitride (TiN), tantalum nitride / copper (Ti / Cu), tantalum nitride / copper (TaN / Cu), etc.

[0150] In some embodiments, the light-emitting colors of the at least two sub-pixels in the parent pixel located in different pixel layers are different. For example, in a two-layer structure with two pixel layers, the light-emitting colors of the sub-pixels in each pixel layer can be the same, and the light-emitting colors of the sub-pixels in different pixel layers are different, or one pixel layer has two sub-pixels with different light-emitting colors, and the other pixel layer has one sub-pixel with a light-emitting color different from that of at least one sub-pixel in the first layer.

[0151] For example, in some embodiments, the light-emitting colors of the sub-pixels 50 in different pixel layers are different to realize a color configuration.

[0152] For example, in a two-layer structure, the light-emitting colors of the sub-pixels 50 in the first pixel layer 20 and the second pixel layer 30 are different to realize a two-color configuration. For example, the light-emitting colors of the sub-pixels 50 from bottom to top are red and green, respectively, or red and blue, or green and blue, etc.

[0153] In this embodiment, each sub-pixel 50 can use inorganic compound semiconductor material.

[0154] In some embodiments, the upper part of the uppermost sub-pixel 50 is provided with a lens, and the lens covers at least one sub-pixel 50 in the parent pixel. For example, one lens can cover one sub-pixel 50, or cover multiple sub-pixels 50.

[0155] The lens is made of insulating material, which can be made of materials such as silicon oxide, silicon nitride, aluminum oxide, silicate glass, silica gel, electron beam photoresist (PMMA, SU8, etc.).

[0156] The parent pixel arrangement structure and micro display device of the embodiment are beneficial to reduce the shielding of the light-emitting surface of the lower sub-pixel, ensure the effective light-emitting area of the lower sub-pixel, reduce energy waste, and thus realize the best light distribution effect, which can effectively improve the light efficiency and reliability of the LED display device.

[0157] Embodiment two

[0158] Referring to Figures 1-5 The micro display device of the embodiment is characterized in that the bottom end of each of the plurality of sub-pixels 50 in the parent pixel in different pixel layers is respectively electrically connected to a corresponding first type of electrode contact 101, and the top ends of the plurality of sub-pixels 50 are electrically connected to a corresponding second type of electrode contact 102 after being interconnected by the top conductive layer 60 to form a top common electrode structure. That is, the top conductive layer 60 of each sub-pixel 50 in the top common electrode structure is electrically connected together and in conductive communication with each other.

[0159] The polarity of the first type of electrode contact 101 and the second type of electrode contact 102 is opposite.

[0160] The parent pixels in the embodiment can be arranged in the form of the parent pixel arrangement structure described in Embodiment 1.

[0161] In some embodiments, in the top common electrode structure, of the two sub-pixels 50 in different pixel layers, one sub-pixel 50 is a light-transmitting pixel and the other sub-pixel 50 is an associated pixel, the bottom end of the light-transmitting pixel is electrically connected to a corresponding first type of electrode contact 101 through a non-common electrode conductive member 80, and the non-common electrode conductive member 80 connected to the light-transmitting pixel is located in the periphery of the associated pixel.

[0162] Exemplarily, Figure 1 The micro display device shown is a top common electrode structure, which is a two-layer structure and has a first layer pixel layer 20 and a second layer pixel layer 30, the first layer pixel layer 20 is provided with one sub-pixel 50, which is an associated pixel, and the second layer pixel layer 30 is provided with one sub-pixel 50, which is a light-transmitting pixel, the bottom end of the light-transmitting pixel is electrically connected to a corresponding first type of electrode contact 101 through a non-common electrode conductive member 80, and the non-common electrode conductive member 80 connected to the light-transmitting pixel is located in the periphery of the associated pixel.

[0163] Alternatively, Figure 4 The micro display device shown is a top common electrode structure, which is a three-layer structure and has a first layer pixel layer 20, a second layer pixel layer 30, and a third layer pixel layer 40, the first layer pixel layer 20 is provided with one sub-pixel 50, which is an associated pixel, the second layer pixel layer 30 is provided with one sub-pixel 50, which is also an associated pixel, and the third layer pixel layer 40 is provided with one sub-pixel 50, which is a light-transmitting pixel, the bottom end of the light-transmitting pixel is electrically connected to a corresponding first type of electrode contact 101 through a non-common electrode conductive member 80, and the non-common electrode conductive member 80 connected to the light-transmitting pixel is located in the periphery of the corresponding associated pixel below.

[0164] It can be understood that the "non-idiophoric conductive member 80" refers to a conductive member for electrically connecting the non-idiophoric end of the sub-pixel 50.

[0165] The material of the non-idiophoric conductive member 80 can be a metal such as aluminum (Al), copper (Cu), tungsten (W), and the like, and a corresponding adhesion layer or barrier layer thereof, such as titanium (Ti), titanium nitride (TiN), tantalum nitride / copper (Ti / Cu), tantalum nitride / copper (TaN / Cu), and the like.

[0166] The top conductive layer 60 is a transparent conductive layer, which is more conducive to light transmission, so that the light emitted by the lower sub-pixel 50 can pass through the top conductive layer 60 and be emitted upward. The transparent conductive layer can be one or a combination of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum-doped zinc oxide (AZO), Al-doped indium tin oxide, Ag-doped indium tin oxide, and Au-doped indium tin oxide.

[0167] In some embodiments, referring to Figure 1 , the periphery of the associated pixel has an insulating filling region 110, and the inside of the insulating filling region 110 is provided for the interconnection conductive member to pass through, and in the top idiophoric structure, the interconnection conductive member is the non-idiophoric conductive member 80;

[0168] That is, the periphery of the associated pixel has an insulating filling region 110, and the non-idiophoric conductive member 80 connected to the light-transmitting pixel (i.e., the non-idiophoric conductive member 80) passes through the insulating filling region 110 of the periphery of the associated pixel, and in the top idiophoric structure, the bottom end of the light-transmitting pixel is electrically connected to the corresponding first type of electrode contact 101 through the non-idiophoric conductive member 80.

[0169] The above structure can be prepared by the following preparation method: filling an insulating material in the periphery of the associated pixel to form an insulating filling region 110, so that the non-idiophoric conductive member 80 directly passes through the insulating filling region 110. In the top idiophoric structure, the non-idiophoric conductive member 80 can also be directly in contact with the corresponding first type of electrode contact 101 after directly passing through the insulating filling region 110 to achieve electrical connection.

[0170] For example, the filling material of the insulating filling region 110 can be one or a combination of silicon oxide, silicon nitride, silicon carbide (SiC), silicon carbon nitride (SiCN), phosphorus silicon glass (PSG), boron phosphorus silicon glass (BPSG), or polyimide.

[0171] Further, the insulating filling region 110 can use a transparent filling material.

[0172] In another way, referring to Figure 6 , the periphery of the associated pixel has a compound semiconductor region 120, and the inside of the compound semiconductor region 120 is provided for the interconnection conductive member to pass through, and in the top idiophoric structure, the interconnection conductive member is the non-idiophoric conductive member 80;

[0173] That is, the periphery of the associated pixel has the compound semiconductor region 120, and the non-idiostatic conductive member 80 connected to the light-transmitting pixel penetrates the compound semiconductor region 120. In the top-idiostatic structure, the bottom end of the light-transmitting pixel is electrically connected to the corresponding first-type electrode contact 101 through the non-idiostatic conductive member 80.

[0174] This way can reserve more compound semiconductor material, and the compound semiconductor material has better heat conductivity, which is beneficial to improve the heat dissipation effect of the whole device.

[0175] It can be understood that the compound semiconductor region 120 penetrated by the non-idiostatic conductive member 80 does not emit light after being electrified.

[0176] Further, the compound semiconductor region 120 is annular, and the associated pixel is surrounded inside the corresponding compound semiconductor region 120, so as to better isolate the associated pixel from other peripheral conductive members and avoid the leakage phenomenon caused by the diffusion of metal atoms to the sidewall of the associated pixel.

[0177] Alternatively, the periphery of the associated pixel is surrounded by a plurality of compound semiconductor regions 120, and the plurality of compound semiconductor regions are distributed in a circumferential direction.

[0178] In some embodiments, referring to Figure 7 The periphery of the associated pixel is also surrounded by a peripheral air separation layer 210 between the associated pixel and the compound semiconductor region 120 of the periphery.

[0179] In some embodiments, referring to Figures 8-9 The periphery of the light-transmitting pixel is also surrounded by a peripheral air separation layer 210.

[0180] In the embodiment, the driving backboard 10 is divided into a display area 103, and all the parent pixels constitute a pixel array. The projection of the pixel array on the driving backboard 10 is located inside the display area 103, that is, the display area 103 is the area where the pixel array is projected.

[0181] The second-type electrode contact 102 can be arranged in the following ways:

[0182] Only the second-type electrode contact 102 is arranged inside the display area 103;

[0183] Alternatively, only the second-type electrode contact 102 is arranged on the periphery of the display area 103. For example, as shown in Figure 16 The periphery of the display area 103 is provided with a peripheral electrode contact area 104, and the second-type electrode contact 102 can be arranged in the peripheral electrode contact area 104; for example, as shown in Figure 17As shown, the periphery of the display region 103 is also provided with an interface 105, and the peripheral electrode contact region 104 can be electrically connected with the interface 105.

[0184] Alternatively, the second type of electrode contact 102 is provided on the outside and inside of the display region 103.

[0185] In some modes, in the above-mentioned top common electrode structure, a common electrode conductor 90 is further included, and the second type of electrode contact 102 is electrically connected to the top conductive layer 60 at the top end of the plurality of sub-pixels through the common electrode conductor 90 to realize the top common electrode.

[0186] The common electrode conductor 90 can be located inside or outside the display region.

[0187] In some modes, referring to Figure 22 In the above-mentioned top common electrode structure, the bottom end of the common electrode conductor 90 directly contacts the corresponding second type of electrode contact 102.

[0188] In some embodiments, in the top common electrode structure, the top conductive layer 60 can be arranged in the following manner:

[0189] The first: at least two sub-pixels 50 in a parent pixel share one top conductive layer 60, and the sub-pixels 50 sharing the top conductive layer 60 are respectively located in different pixel layers.

[0190] Exemplarily, Figure 1 The micro display device shown is a top common electrode structure, which is a two-layer structure, has a first layer of pixel layer 20 and a second layer of pixel layer 30, and the sub-pixels 50 in the first layer of pixel layer 20 and the second layer of pixel layer 30 share one top conductive layer 60; or, Figure 3 The micro display device shown is a top common electrode structure, which is a three-layer structure, has a first layer of pixel layer 20, a second layer of pixel layer 30, and a third layer of pixel layer 40, and the sub-pixels 50 in the first layer of pixel layer 20, the second layer of pixel layer 30, and the third layer of pixel layer 40 share one top conductive layer 60.

[0191] In some embodiments, in the above-mentioned top common electrode structure, a common electrode conductor 90 is further included, and the second type of electrode contact 102 is electrically connected to the top conductive layer 60 at the top end of the plurality of sub-pixels through the common electrode conductor 90 to realize the top common electrode.

[0192] Among them, at least two sub-pixels in a parent pixel share one top conductive layer 60, and the common electrode conductor 90 directly contacts the shared top conductive layer 60 to realize electrical connection; or the common electrode conductor 90 does not directly contact the shared top conductive layer 60, but makes the common electrode conductor 90 electrically connected to the shared top conductive layer 60 through a transition conductor.

[0193] Second: the top of the sub-pixel in the different pixel layers in the mother pixel is separately provided with a top conductive layer 60 without sharing (the pixel layer structure with a separately provided top conductive layer 60 is shown in Figures 18-25 );

[0194] That is, the top of the sub-pixel in the different pixel layers in the mother pixel is separately provided with a top conductive layer 60 without sharing, and can be interconnected through the common-pole conductive member.

[0195] Further, the top conductive layer in the same layer pixel layer (the top conductive layer electrically connected with the sub-pixel in the same layer pixel layer) is located at the upper part of the corresponding sub-pixel in the layer pixel layer to which it is electrically connected. Here, the so-called "upper part" refers to being located near the top of the sub-pixel. The sub-pixel includes a P-type semiconductor layer, an active layer, and an N-type semiconductor layer arranged in sequence along the Z direction. Therefore, the so-called "upper part" can be understood as making the lowest point of the top conductive layer higher than the upper surface of the active layer in the sub-pixel. For example, referring to Figure 18 , the entire top conductive layer 60 of the sub-pixel in the first layer pixel layer is located above the sub-pixel 50, or referring to Figure 19 , the entire top conductive layer 60 of the sub-pixel in the first layer pixel layer is located at the upper part of the sub-pixel 50, and only the part of the top conductive layer region on the periphery of the sub-pixel is slightly lower.

[0196] For example, referring to Figure 21 , in a two-layer structure with two layers of pixel layers, a top conductive layer 60 can be separately provided at the top of the sub-pixel 50 in the first layer pixel layer 20, and a top conductive layer 60 can also be separately provided at the top of the sub-pixel 50 in the second layer pixel layer 30. The two top conductive layers 60 can be interconnected through an interconnection conductive part 901, which is part of the common-pole conductive member 90.

[0197] Or;

[0198] In a three-layer structure with three layers of pixel layers, a top conductive layer 60 can be separately provided at the top of the sub-pixel 50 in the first layer pixel layer 20, and a top conductive layer 60 can also be separately provided at the top of the sub-pixel 50 in the second layer pixel layer 30 and the third layer pixel layer 40. The three top conductive layers 60 can be interconnected through the common-pole conductive member 90.

[0199] The preparation method of the top conductive layer 60 in the first pixel layer includes: etching to obtain the sub-pixel in the first pixel layer 20, then backfilling the insulating medium in the current pixel layer, after backfilling, planarizing the top of the first pixel layer to expose the top end of the sub-pixel in the pixel layer, then depositing the top conductive layer 60 to make it contact with the exposed area of the top end of the sub-pixel to realize electrical connection, then depositing the insulating medium on the upper part of the pixel layer and planarizing again, then stacking the upper pixel layer, the upper pixel layer can also be prepared in the same way to separately prepare the top conductive layer 60, that is, after etching to obtain the sub-pixel, backfilling the insulating medium, after backfilling, planarizing the top of the pixel layer to expose the top end of the sub-pixel in the pixel layer, then depositing the top conductive layer 60 to realize electrical connection. The insulating medium in the process can be transparent material.

[0200] The above preparation method also makes the top conductive layer of the sub-pixel separately provided in the sub-pixel basically located at the upper part of the sub-pixel.

[0201] In the above-mentioned embodiment, the top end of the sub-pixel in at least two different pixel layers of the parent pixel is separately provided with the top conductive layer 60 without sharing, and the common electrode conductive part 90 includes an interconnecting conductive part 901, and the upper and lower two adjacent top conductive layers 60 are interconnected through the interconnecting conductive part 901 to realize electrical connection. For details, please refer to Figures 12-23 .

[0202] Further, at least one top conductive layer 60 can be in direct contact with the interconnecting conductive part 901 to realize electrical connection, or at least one top conductive layer 60 is not in direct contact with the interconnecting conductive part 901, but the top conductive layer 60 and the interconnecting conductive part 901 are electrically connected through a metal reinforcing part.

[0203] In some embodiments, in the top common electrode structure, at least one pixel layer is a two-type pixel layer, the bottom end of the sub-pixel 50 in the two-type pixel layer is electrically connected to the corresponding first-type electrode contact 101 through the bottom conductive layer 70, and the bottom surface of the sub-pixel 50 in the two-type pixel layer is completely covered by the bottom conductive layer 70. This method generally makes the area of the bottom conductive layer 70 larger than the area of the first-type electrode contact 101 electrically connected thereto, so that the first-type electrode contact 101 only needs to be in contact with the bottom conductive layer 70 to realize electrical connection, without the need for alignment. For example, Figure 1 In the above-mentioned embodiment, the two pixel layers are both two-type pixel layers, Figure 4 In the above-mentioned embodiment, the three pixel layers are all two-type pixel layers.

[0204] In some schemes, please refer to Figure 1The bottom end of the sub-pixel 50 in the second-type pixel layer is further provided with a bottom ohmic contact layer 180 made of a conductive material.

[0205] The bottom end of the sub-pixel 50 in the second-type pixel layer is electrically connected through the bottom ohmic contact layer 180 and the bottom conductive layer 70.

[0206] For example, the bottom ohmic contact layer 180 can be one or more of indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium tin zinc oxide (IGZO), aluminum-doped zinc oxide (AZO), and other transparent conductive films, or one or more of nickel (Ni), chromium (Cr), gold (Au), silver (Ag), zinc (Zn), rhodium (Rh), beryllium (Be), aluminum (Al), and other conductive metal materials, or a composite structure formed by combining transparent metal oxides and metals; the thickness of the bottom ohmic contact layer 180 is in the range of 1 nm to 500 nm.

[0207] Further, among the two sub-pixels 50 in different pixel layers, one sub-pixel 50 is a light-transmitting pixel and the other sub-pixel 50 is an associated pixel, the pixel layer where the light-transmitting pixel is located is the second-type pixel layer, and the bottom end of the light-transmitting pixel in the second-type pixel layer is electrically connected to the corresponding non-common-potential conductive member 80 through the bottom conductive layer 70.

[0208] The pixel layer where the associated pixel is located can be the second-type pixel layer or other types of pixel layers.

[0209] In some schemes, the bottom conductive layer 70 described above can be a non-metal conductive layer.

[0210] In some schemes, referring to Figure 1 and Figure 3 the bottom conductive layer 70 described above can be a metal bonding layer, and a first outer metal fence 140 and a first inner metal fence 130 are formed above the bottom conductive layer 70 of the light-transmitting pixel in the second-type pixel layer, so that the light-transmitting pixel in the second-type pixel layer is surrounded by the first outer metal fence 140, and the inside of the light-transmitting hole 501 is surrounded by the first inner metal fence 130.

[0211] It can be understood that the first outer metal fence 140 and the outer sidewall of the surrounded light-transmitting pixel are insulated and isolated. The first inner metal fence 130 and the inner sidewall of the peripheral light-emitting area 502 of the light-transmitting pixel also need to be insulated and isolated.

[0212] Specifically, the first insulating layer 150 can be covered at the outer sidewall of the light-transmitting pixel, so that the first peripheral metal fence 140 and the outer sidewall of the surrounded light-transmitting pixel are insulated and separated by the first insulating layer 150. The first inner peripheral metal fence 130 and the inner sidewall of the peripheral light-emitting area 502 of the light-transmitting pixel are also insulated and separated by the first insulating layer 150.

[0213] It can be understood that the outer sidewall of the sub-pixel 50 refers to the sidewall at the outer periphery edge of the sub-pixel, for example, the sub-pixel 50 is a light-transmitting pixel, and a light-transmitting hole 501 is formed in the light-transmitting pixel, so that the light-transmitting pixel is annular, and the outer sidewall of the light-transmitting pixel refers to the outer wall of the annular. The inner sidewall of the peripheral light-emitting area 502 refers to the sidewall on the side facing the inner light-transmitting hole 501, that is, the sidewall at the inner periphery edge, for example, the peripheral light-emitting area 502 is annular, and the inner sidewall of the peripheral light-emitting area 502 refers to the inner wall of the annular.

[0214] Exemplarily, the first insulating layer 150 can be made of one or more of silicon oxide, aluminum oxide, silicon nitride, titanium oxide, hafnium oxide, tantalum oxide, niobium oxide, aluminum nitride, or gallium nitride.

[0215] In some schemes, the thickness of the first insulating layer 150 can be 5 nm to 2 um.

[0216] Exemplarily, the metal bonding layer can be a combination of metal materials, for example, a combination of nickel (Ni), tin (Sn), gold (Au), copper (Cu), aluminum (Al), indium tin oxide (ITO), and the like. Exemplarily, the metal bonding layer can be one or more of a combination of Ni and Sn, a combination of Au and Sn, a combination of Cu and Sn, a combination of Au and In, a combination of Au and Au, a combination of Al and Al, a combination of Cu and Cu, or a combination of ITO and ITO. The metal bonding layer and the driving backplane 10 can further include an adhesion layer (material: Cr, Ti, Ni, etc.) and a barrier depletion layer (material: Ni, Pt, Cu, etc.). The metal bonding layer on the pixel layer and the driving backplane 10 can be symmetrical or asymmetrical.

[0217] In some preferred modes, the metal bonding layer can be a multi-layer structure stacked in the height direction, and the layers from bottom to top are respectively a Cr layer (adhesion layer), a Pt layer (barrier depletion layer), an Au layer, a Sn layer, and an Au layer, with thicknesses of 10 nm, 50 nm, 100 nm, 150 nm, and 50 nm, respectively.

[0218] The metal bonding layer at the bottom end of the light-transmitting pixel is integrally formed with the first peripheral metal fence 140, and the metal bonding layer is sputtered to form a metal fence during etching, thereby achieving integral formation. Alternatively, the metal bonding layer at the bottom end of the light-transmitting pixel is separately provided from the first peripheral metal fence 140.

[0219] Similarly, the metal bonding layer at the bottom end of the light-transmitting pixel is integrally formed with the first inner metal fence 130, and the metal bonding layer is sputtered to form the metal fence during etching, thereby achieving integral formation. Alternatively, the metal bonding layer at the bottom end of the light-transmitting pixel and the first inner metal fence 130 are separately arranged.

[0220] The first outer metal fence 140 and the first inner metal fence 130 can both be annular.

[0221] In some modes, referring to Figure 1 and Figure 3 To achieve insulation and isolation of the first outer metal fence 140 of the upper sub-pixel 50 and the top conductive layer 60, a second insulating layer 160 can also be arranged between the first outer metal fence 140 and the top conductive layer 60; the material of the second insulating layer 160 can be the same as that of the first insulating layer 150.

[0222] It can be understood that when the upper sub-pixel and the lower adjacent sub-pixel share a top conductive layer 60, a second insulating layer 160 is arranged between the first outer metal fence 140 of the upper sub-pixel and the shared top conductive layer 60.

[0223] In some modes, the periphery of the associated pixel in the two-pixel layer can also be surrounded by the first outer metal fence 140.

[0224] In some embodiments, in the case that there is no metal bonding layer at the bottom of the sub-pixel, the first inner metal fence 130 and the first outer metal fence 140 described above can also be arranged.

[0225] In some modes, referring to Figure 7 , the periphery of the associated pixel in the two-pixel layer has a compound semiconductor region 120, and the common electrode conductive member 90 connected to the light-transmitting pixel passes through the compound semiconductor region 120. The compound semiconductor region 120 is annular, and the associated pixel is surrounded inside the corresponding compound semiconductor region 120, and the periphery of the associated pixel is also surrounded by a peripheral air separation layer 210, which is located between the associated pixel and the compound semiconductor region 120 of the periphery.

[0226] Further, the first outer metal fence 140 of the periphery of the associated pixel in the two-pixel layer and the compound semiconductor region 120 are provided with the peripheral air separation layer 210 described above.

[0227] For example, Figure 1In the top common electrode structure shown, the first pixel layer 20 and the second pixel layer 30 are both two-type pixel layers, the sub-pixels 50 in the second pixel layer 30 are light-transmitting pixels with light-transmitting holes 501, and the sub-pixels 50 in the first pixel layer 20 are associated pixels. The periphery of the light-transmitting pixels is surrounded by a first peripheral metal fence 140, and the inside of the light-transmitting holes 501 is surrounded by a first inner metal fence 130. The periphery of the associated pixels is also surrounded by a first peripheral metal fence 140. The bottom conductive layer 70 of the light-transmitting pixels is electrically connected to the corresponding first-type electrode contact 101 through a non-common electrode conductive member 80 (interconnected conductive member).

[0228] In some embodiments, the light-emitting colors of at least two sub-pixels in different pixel layers are different, so as to realize a color configuration.

[0229] For example, in a two-layer structure, the light-emitting colors of the sub-pixels 50 in the first pixel layer 20 and the second pixel layer 30 are different, so as to realize a two-color configuration. For example, the light-emitting colors of the sub-pixels 50 from bottom to top are red and green, or red and blue, or green and blue, etc. Alternatively, a pixel layer has two types of sub-pixels with different light-emitting colors, and a pixel layer has a sub-pixel with a light-emitting color different from that of at least one sub-pixel in the first pixel layer.

[0230] In this embodiment, each sub-pixel 50 can be made of an inorganic compound semiconductor material.

[0231] In some embodiments, the upper part of the uppermost sub-pixel 50 is provided with a lens 250, and the lens 250 covers at least one sub-pixel 50 in the parent pixel. For example, one lens 250 can cover one sub-pixel 50, or as shown, cover multiple sub-pixels 50. Figures 24-25

[0232] In some embodiments, as shown in Figure 24 , the bottom end of the lens 250 can be in direct contact with the top surface of the uppermost top conductive layer 60; or as shown in Figure 25 , the bottom end g1 of the lens 250 can be higher than the top surface of the uppermost top conductive layer 60.

[0233] The micro display device structure of the above embodiments can be applied not only to a two-layer structure with two pixel layers, but also to a three-layer structure with three pixel layers, or a structure with more than three layers.

[0234] ​The LED display device of the embodiment simplifies the electrical connection structure, is more conducive to preparation, can flexibly realize adjustment of the sub-pixel light-emitting area and the light-emitting position, is conducive to reducing shielding of the lower sub-pixel light-emitting surface, increases the effective light-emitting area of the lower sub-pixel, is conducive to reducing energy waste, realizes the best light distribution effect, makes the light pattern meet the needs of different application scenarios, and also effectively improves the light efficiency and reliability of the display device.

[0235] Embodiment three

[0236] Referring to Figure 12 The embodiment discloses a micro display device, and the main difference between the embodiment and embodiment two is that at least one pixel layer is a type one pixel layer, and the bottom end of each sub-pixel 50 in the type one pixel layer is electrically connected to a corresponding first type electrode contact 101 through an independent conductive block 270, and the conductive block 270 corresponds to the first type electrode contact 101 one by one.

[0237] The conductive block 270 has an electrical contact area 2701 for electrical connection with the bottom end of the corresponding sub-pixel 50 in the type one pixel layer, and the area of the electrical contact area 2701 is smaller than the area of the bottom surface of the corresponding sub-pixel in the type one pixel layer without the need to contact the entire bottom surface of the sub-pixel.

[0238] In the above structure, a type one pixel layer is used in a certain layer of pixel layers, the bottom end of each sub-pixel 50 in the type one pixel layer is electrically connected to a corresponding first type electrode contact 101 through an independent conductive block 270, and the conductive block 270 corresponds to the first type electrode contact 101 one by one, which is conducive to improving the bonding accuracy and thus improving the resolution and display effect of the device.

[0239] In some embodiments, the bottom end of each sub-pixel 50 in the type one pixel layer is also provided with a metal reflection layer 280 for electrical connection through the metal reflection layer 280 and the corresponding conductive block 270.

[0240] Further, the bottom end of each sub-pixel 50 in the type one pixel layer is in contact with the electrical contact area 2701 of the corresponding conductive block 270 through the metal reflection layer 280 to realize electrical connection.

[0241] Further, only the bottom end of each sub-pixel 50 in the type one pixel layer is electrically connected to the metal reflection layer 280, at which time only the bottom end of the sub-pixel 50 can be exposed to contact the metal reflection layer 280.

[0242] Alternatively, the bottom end and at least part of the sidewall of each sub-pixel 50 in the type one pixel layer are both electrically connected to the metal reflection layer 280, at which time the bottom end and part of the sidewall of the sub-pixel 50 can be exposed to contact the metal reflection layer 280, and this mode further increases the contact area, thereby increasing the current injection capacity.

[0243] It can be understood that the "side wall" above can be an outer side wall or an inner side wall of the sub-pixel 50. If the sub-pixel has a light-transmitting hole 501, an inner side wall is formed, otherwise only an outer side wall is formed. The exposed height of the side wall for electrical contact should not be too large, so as to ensure that the sub-pixel side wall cannot be short-circuited.

[0244] In some embodiments, a peripheral reflection part 2801 is formed above the metal reflection layer 280 of the sub-pixel 50 in the first type pixel layer.

[0245] In some embodiments, the pixel layer where the light-transmitting pixel is located is a first type pixel layer. The bottom end of the light-transmitting pixel in the first type pixel layer is electrically connected to the corresponding non-common electrode conductive part 80 through the metal reflection layer 280 and the conductive block 270 in sequence.

[0246] For example, referring to Figure 12 In the top common electrode structure, the first layer pixel layer 20 and the second layer pixel layer 30 are both first type pixel layers. The sub-pixel 50 in the second layer pixel layer 30 is a light-transmitting pixel, and the sub-pixel 50 in the first layer pixel layer 20 is an associated pixel. The bottom end of the light-transmitting pixel is electrically connected to the corresponding non-common electrode conductive part 80 through the metal reflection layer 280 and the conductive block 270 in sequence, and is electrically connected to the corresponding first type electrode contact 101 through the non-common electrode conductive part 80. Since the pixel layer where the associated pixel is located is the bottommost pixel layer, the bottom end of the associated pixel can be directly electrically connected to the corresponding first type electrode contact 101 through the metal reflection layer 280 and the conductive block 270. Among them, Figure 12 The dashed arrow direction in the middle is the light-emitting direction of the associated pixel in the first layer.

[0247] Further, the peripheral reflection part 2801 and the inner peripheral reflection part 2802 are formed above the metal reflection layer 280 of the light-transmitting pixel in the first type pixel layer. The light-transmitting pixel in the first type pixel layer is surrounded by the peripheral reflection part 2801, and the inside of the light-transmitting hole 501 is surrounded by the inner peripheral reflection part 2802.

[0248] The peripheral reflection part 2801 and the outer side wall of the surrounded light-transmitting pixel are insulated and separated by the first insulating layer 150, so as to prevent the light-transmitting pixel from being short-circuited at the side wall and leaking electricity. In this way, the metal reflection layer 280 is arranged around the end of the light-transmitting pixel close to the driving backboard 10 and the side wall of the light-transmitting pixel, which can better reflect the light emitted by the light-transmitting pixel in the X direction back, so that most of the light emitted by the light-transmitting pixel can be emitted from above the light-transmitting pixel, thereby enhancing the light efficiency.

[0249] Similarly, the inner peripheral reflection part 2802 is insulated and separated from the inner side wall of the peripheral light emitting area 502 of the light transmission pixel by the first insulating layer 150. The inner peripheral reflection part 2802 can make the light emitted by the light transmission pixel towards the inside of the light transmission hole 501 be reflected back by the inner peripheral reflection part 2802, thereby better reducing the light loss of the peripheral light emitting area 502.

[0250] In some embodiments, the inner peripheral reflection part 2802 and the inner peripheral reflection part 2802 can both be annular.

[0251] In some embodiments, the metal reflection layer 280 of the associated pixel in the first pixel layer is formed with a peripheral reflection part 2801, and the associated pixel in the first pixel layer is surrounded by the peripheral reflection part 2801.

[0252] For example, referring to Figure 12 the top common electrode structure shown, the first layer pixel layer 20 and the second layer pixel layer 30 are both first pixel layers, the sub-pixel 50 in the second layer pixel layer 30 is a light transmission pixel, the sub-pixel 50 in the first layer pixel layer 20 is an associated pixel, the upper part of the metal reflection layer 280 of the light transmission pixel in the second layer is formed with a peripheral reflection part 2801 and an inner peripheral reflection part 2802, the inner peripheral reflection part 2802 is located inside the light transmission hole 501 of the light transmission pixel, and the peripheral reflection part 2801 surrounds the periphery of the light transmission pixel; and the upper part of the metal reflection layer 280 of the associated pixel in the first layer is formed with a peripheral reflection part 2801, and the peripheral reflection part 2801 surrounds the periphery of the associated pixel.

[0253] In some embodiments, the micro display device has multiple pixel layers, which can be such that other pixel layers are second pixel layers; or can be such that all pixel layers are first pixel layers, or can be such that all pixel layers are second pixel layers.

[0254] In some embodiments, as shown in Figure 12 in the top common electrode structure, at least two sub-pixels 50 in a parent pixel share a top conductive layer 60, and the sub-pixels 50 sharing the top conductive layer 60 are located in different pixel layers. For example, in Figure 12 the two-layer structure shown, both the first layer pixel layer 20 and the second layer pixel layer 30 are first pixel layers, the sub-pixel 50 in the second layer pixel layer 30 is a light transmission pixel, and the top conductive layer of the light transmission pixel is electrically connected to the top of the associated pixel in the first layer pixel layer 20 through the light transmission hole, so that they share a top conductive layer 60.

[0255] Alternatively, the top of the sub-pixel in the parent pixel located in different pixel layers is separately provided with a top conductive layer 60 without sharing; that is, the top of the sub-pixel in the different pixel layers in the parent pixel is separately provided with a top conductive layer 60 without sharing, and can be interconnected by a common electrode conductive member. For example, in Figures 21-25In the two-layer structure shown, both of the two pixel layers are two-type pixel layers, and the sub-pixels 50 in the second pixel layer 30 are light-transmitting pixels, and the top conductive layer 60 of the light-transmitting pixel is conductively interconnected with the top conductive layer 60 of the associated pixel in the first pixel layer 20.

[0256] In some embodiments, the upper part of the uppermost sub-pixel 50 is provided with a lens, and the lens covers at least one sub-pixel 50 in the parent pixel. For example, one lens can cover one sub-pixel 50, or can cover multiple sub-pixels 50.

[0257] Embodiment Four

[0258] Referring to Figures 13-15 The micro display device of the present embodiment is mainly different from that of Embodiment Two in that the multiple sub-pixels 50 in the parent pixel adopt a bottom common electrode structure when being electrically connected.

[0259] In the present embodiment, the top end of each of the multiple sub-pixels 50 in the parent pixel located in different pixel layers is electrically connected to the corresponding second-type electrode contact 102 through the top conductive layer 60, and the bottom ends of the multiple sub-pixels 50 are conductively interconnected and connected to the first-type electrode contact 101 to form a bottom common electrode structure, that is, the bottom ends of the multiple sub-pixels 50 in the bottom common electrode structure are electrically connected together and conductively communicated with each other.

[0260] Here, the polarities of the first-type electrode contact 101 and the second-type electrode contact 102 are opposite.

[0261] In some embodiments, in the bottom common electrode structure, the bottom ends of the sub-pixels 50 in different pixel layers are electrically connected through the common electrode conductive member 90, and the top conductive layer 60 of each sub-pixel 50 is respectively electrically connected to the corresponding second-type electrode contact 102 through the non-common electrode conductive member 80.

[0262] It can be understood that the "common electrode conductive member 90" refers to the conductive member for electrically connecting the common electrode ends of the sub-pixels. The material of the above-mentioned common electrode conductive member 90 can be metal such as aluminum (Al), copper (Cu), tungsten (W), and the corresponding adhesion layer or barrier layer thereof, such as titanium (Ti), titanium nitride (TiN), tantalum nitride / copper (Ti / Cu), tantalum nitride / copper (TaN / Cu), etc.

[0263] In some embodiments, referring to Figure 13In the bottom common electrode structure, among two sub-pixels 50 located in different pixel layers, one sub-pixel 50 is a light-transmitting pixel located in the second layer of pixel layers 30, and the other sub-pixel 50 is an associated pixel located in the first layer of pixel layers 20. The bottom end of the light-transmitting pixel and the bottom end of the associated pixel are electrically connected through the common electrode conductive member 90. The common electrode conductive member 90 connected to the light-transmitting pixel is located in the periphery of the associated pixel. Among them, Figure 12 The dotted arrow direction is the light-emitting direction of the associated pixel in the first layer.

[0264] In some embodiments, referring to Figure 13 , the periphery of the associated pixel has an insulating filling area 110, and the inside of the insulating filling area 110 is provided for the interconnection conductive member to pass through. In the bottom common electrode structure, the interconnection conductive member is the common electrode conductive member 90.

[0265] That is, the periphery of the associated pixel has an insulating filling area 110, and the common electrode conductive member 90 connected to the light-transmitting pixel passes through the insulating filling area 110. In the bottom common electrode structure, the common electrode conductive member 90 connected to the light-transmitting pixel is electrically connected to the first type of electrode contact 101 after passing through the insulating filling area 110.

[0266] In other embodiments, referring to Figures 14-15 , the periphery of the associated pixel has a compound semiconductor area 120, and the inside of the compound semiconductor area 120 is provided for the interconnection conductive member to pass through. In the bottom common electrode structure, the interconnection conductive member is the common electrode conductive member 90.

[0267] That is, the periphery of the associated pixel has a compound semiconductor area 120, and the common electrode conductive member 90 connected to the light-transmitting pixel passes through the compound semiconductor area 120. In the bottom common electrode structure, the common electrode conductive member 90 connected to the light-transmitting pixel is electrically connected to the first type of electrode contact 101 after passing through the compound semiconductor area 120.

[0268] It can be understood that the compound semiconductor area 120 penetrated by the common electrode conductive member 90 does not emit light after being electrified.

[0269] Further, the compound semiconductor area 120 is annular, and the associated pixel is surrounded inside the corresponding compound semiconductor area 120; so as to better isolate the associated pixel from other peripheral conductive members, and avoid the leakage phenomenon caused by the diffusion of metal atoms to the sidewall of the associated pixel.

[0270] Among them, referring to Figures 14-15 , the periphery of the associated pixel can also be surrounded by a peripheral air separation layer 210; and the compound semiconductor area 120 and the associated pixel surrounded thereby have the above-mentioned peripheral air separation layer 210.

[0271] In some embodiments, the top conductive layer 60 of the associated pixel is electrically connected to the corresponding second-type electrode contact 102 through the non-co-located conductive member 80, and the top conductive layer 60 of the associated pixel is electrically connected to the corresponding non-co-located conductive member 90 after passing through the light-transmitting hole 501 of the light-transmitting pixel.

[0272] It can be understood that the top conductive layer 60 of the associated pixel needs to be insulated and isolated from the light-transmitting pixel to avoid causing self-short circuit of the light-transmitting pixel.

[0273] For example, referring to Figure 13 , the micro display device has two pixel layers, i.e., a first layer of pixels 20 and a second layer of pixels 30. The sub-pixels 50 in the first layer of pixels 20 are associated pixels, and the sub-pixels 50 in the second layer of pixels 30 are light-transmitting pixels. The top conductive layer 60 of the light-transmitting pixel is electrically connected to the left second-type electrode contact 102 through the left non-co-located conductive member 80, and the top conductive layer 60 of the lower associated pixel extends upwardly and passes through the light-transmitting hole 501 of the upper light-transmitting pixel and is electrically connected to the right second-type electrode contact 102 through the right non-co-located conductive member 80.

[0274] In some embodiments, referring to Figure 13 , in the bottom co-located structure, at least one pixel layer is a two-type pixel layer. The bottom end of the sub-pixel 50 in the two-type pixel layer is electrically connected to the corresponding first-type electrode contact 101 through the bottom conductive layer 70, and the bottom surface of the sub-pixel 50 in the two-type pixel layer is completely covered by the bottom conductive layer 70.

[0275] In some schemes, the bottom of the sub-pixel 50 in the two-type pixel layer is further provided with a bottom ohmic contact layer 180, which is prepared from a conductive material.

[0276] The bottom end of the sub-pixel 50 in the two-type pixel layer is electrically connected through the bottom ohmic contact layer 180 and the bottom conductive layer 70.

[0277] For example, the bottom ohmic contact layer 180 can be one or more of indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium tin zinc oxide (IGZO), aluminum-doped zinc oxide (AZO), and other transparent conductive thin films, can be one or more of nickel (Ni), chromium (Cr), gold (Au), silver (Ag), zinc (Zn), rhodium (Rh), beryllium (Be), aluminum (Al), and other conductive metal materials, or can be a composite structure composed of a transparent metal oxide and a metal. The thickness of the bottom ohmic contact layer 180 is 1 nm to 500 nm.

[0278] Further, the pixel layer in which the light-transmitting pixel is located is a two-type pixel layer, and the bottom end of the light-transmitting pixel in the two-type pixel layer is electrically connected to the co-located conductive member 90 through the bottom conductive layer 70.

[0279] If the pixel layer where the associated pixel is located is also a second-type pixel layer, the bottom conductive layer 70 at the bottom end of the light-transmitting pixel and the bottom conductive layer 70 at the bottom end of the associated pixel are electrically connected through the common electrode conductive member 90.

[0280] In some embodiments, referring to Figure 13 , the bottom conductive layer 70 is a metal bonding layer, and a first peripheral metal fence 140 and a first inner metal fence 130 are formed above the bottom conductive layer 70 of the light-transmitting pixel in the second-type pixel layer, so that the light-transmitting pixel in the second-type pixel layer is surrounded by the first peripheral metal fence 140, and the inside of the light-transmitting hole 501 is surrounded by the first inner metal fence 130.

[0281] It can be understood that the first peripheral metal fence 140 and the outer sidewall of the surrounded light-transmitting pixel are insulated and separated. The first inner metal fence 130 and the inner sidewall of the peripheral light-emitting area 502 of the light-transmitting pixel also need to be insulated and separated.

[0282] Specifically, the first insulating layer 150 can be covered at the outer sidewall of the light-transmitting pixel, so that the first peripheral metal fence 140 and the outer sidewall of the surrounded light-transmitting pixel are insulated and separated through the first insulating layer 150. The first inner metal fence 130 and the inner sidewall of the peripheral light-emitting area 502 of the light-transmitting pixel are also insulated and separated through the first insulating layer 150.

[0283] The metal bonding layer at the bottom end of the light-transmitting pixel and the first peripheral metal fence 140 are integrally formed, and the metal bonding layer will be sputtered to form a metal fence during etching, thereby achieving integral formation; or the metal bonding layer at the bottom end of the light-transmitting pixel and the first peripheral metal fence 140 are separately arranged.

[0284] Similarly, the metal bonding layer at the bottom end of the light-transmitting pixel and the first inner metal fence 130 are integrally formed, and the metal bonding layer will be sputtered to form a metal fence during etching, thereby achieving integral formation; or the metal bonding layer at the bottom end of the light-transmitting pixel and the first inner metal fence 130 are separately arranged.

[0285] The first peripheral metal fence 140 and the first inner metal fence 130 can both be annular.

[0286] In some embodiments, to achieve the insulation and separation of the first peripheral metal fence 140 of the upper sub-pixel 50 and the top conductive layer 60 of itself, a second insulating layer 160 can also be arranged between the first peripheral metal fence 140 and the top conductive layer 60.

[0287] For example, referring to Figure 13, the micro display device is a bottom common electrode structure, and has a first pixel layer 20 and a second pixel layer 30, both of which are two-type pixel layers, a sub-pixel 50 in the first pixel layer 20 is a correlation pixel, and a sub-pixel 50 in the second pixel layer 30 is a light-transmitting pixel, a bottom conductive layer 70 of the light-transmitting pixel and a bottom conductive layer 70 of the correlation pixel are electrically connected through a common electrode conductive member 90 to form the bottom common electrode structure; a first peripheral metal fence 140 is arranged around the periphery of the light-transmitting pixel in the second layer, and a first inner metal fence 130 is arranged around the inside of the light-transmitting hole 501.

[0288] In some embodiments, in the bottom common electrode structure, two sub-pixels 50 located in different pixel layers are a light-transmitting pixel and a correlation pixel, respectively, and a top conductive layer 60 of the light-transmitting pixel is electrically connected to a corresponding second-type electrode contact 102 through a non-common electrode conductive member 80 located in the periphery of the correlation pixel.

[0289] Further, the top conductive layer 60 of the correlation pixel is also electrically connected to the corresponding second-type electrode contact 102 through another non-common electrode conductive member 80 also located in the periphery of the correlation pixel.

[0290] In the bottom common electrode structure, the top end of the sub-pixel located in different pixel layers in the parent pixel is separately provided with the top conductive layer, and the following forms can be used in the specific arrangement:

[0291] In some arrangement forms, the top conductive layer of the sub-pixel can be partially located on the side of the sub-pixel.

[0292] In another arrangement form, the top conductive layer 60 in at least one pixel layer is completely located above the corresponding sub-pixel in the pixel layer to which the top conductive layer is electrically connected, that is, the top conductive layer of the sub-pixel is completely located above the sub-pixel.

[0293] Further, the top conductive layer in the same pixel layer (the top conductive layer electrically connected to the sub-pixel in the same pixel layer) can be completely located above the corresponding sub-pixel in the pixel layer to which the top conductive layer is electrically connected, that is, the top conductive layer of the sub-pixel in the pixel layer is completely located above the sub-pixel.

[0294] In some embodiments, in the bottom common electrode structure, a display area 103 is divided on the driving back plate 10, and all the parent pixels form a pixel array, and the projection of the pixel array on the driving back plate 10 is located inside the display area, that is, the display area 103 is the area where the pixel array is projected.

[0295] The first electrode contact 101 can be arranged in the following manners: only in the display area 103; only outside the display area 103; or both inside and outside the display area 103.

[0296] In the bottom common electrode structure, the top conductive layer of each sub-pixel in the parent pixel is arranged separately, and can be arranged in the following manners:

[0297] In some arrangements, the top conductive layer of a sub-pixel can be partially arranged on the side of the sub-pixel and extend to the lower part of the sub-pixel. For example, the top conductive layer 60 of a sub-pixel in the second pixel layer 30 in FIG. 6B. Figure 13

[0298] In another arrangement, the top conductive layer in the same pixel layer (the top conductive layer electrically connected to the sub-pixel in the same pixel layer) is arranged above the corresponding sub-pixel in the pixel layer. Here, the "upper part" refers to the position near the top end of the sub-pixel. The sub-pixel includes a P-type semiconductor layer, an active layer, and an N-type semiconductor layer arranged in sequence along the Z direction (height direction). The lowest point of the top conductive layer is higher than the upper surface of the active layer in the sub-pixel. For example, the entire top conductive layer 60 of a sub-pixel is arranged above the sub-pixel 50, or the entire top conductive layer 60 of a sub-pixel in the first pixel layer is arranged above the sub-pixel 50, and only a small part of the top conductive layer is slightly lower than the top surface of the sub-pixel.

[0299] In some embodiments, in the bottom common electrode structure, the top conductive layer 60 of each sub-pixel is electrically connected to the corresponding second electrode contact 102 through the corresponding non-common electrode conductive member 80. The bottom end of the non-common electrode conductive member 80 can directly contact the corresponding second electrode contact 102.

[0300] In some embodiments, the light-emitting colors of at least two sub-pixels in different pixel layers are different, so as to realize color configuration.

[0301] For example, in a two-layer structure, the light-emitting colors of the sub-pixels 50 in the first pixel layer 20 and the second pixel layer 30 are different, so as to realize double-color configuration. For example, the light-emitting colors of the sub-pixels 50 from bottom to top are red and green, respectively, or red and blue, or green and blue, etc. Alternatively, a pixel layer has two sub-pixels with different light-emitting colors, and the light-emitting color of a sub-pixel in another pixel layer is different from that of at least one sub-pixel in the first pixel layer.

[0302] ​In some embodiments, the upper part of the uppermost sub-pixel 50 is provided with a lens, which covers at least one sub-pixel 50 in the parent pixel. For example, one lens can cover one sub-pixel 50, or cover multiple sub-pixels 50.

[0303] Embodiment Five

[0304] In the micro display device in this embodiment, the top conductive layer 60 is electrically connected to the metal reinforcing member 190, so that the current spreading capability is increased through the metal reinforcing member.

[0305] In some embodiments, the metal reinforcing members 190 in different parent pixels can be shared or used independently by the respective parent pixels.

[0306] In the top common electrode structure or the bottom common electrode structure, at least one top conductive layer 60 can be electrically connected to the metal reinforcing member 190, and the metal reinforcing member 190 can be located above or below the top conductive layer 60 to which it is electrically connected.

[0307] In the top common electrode structure: if at least two sub-pixels 50 in the parent pixel share one top conductive layer 60, and the sub-pixels sharing the top conductive layer 60 are located in different pixel layers, respectively, the shared top conductive layer 60 can be electrically connected to the metal reinforcing member 190, and the following methods can be used when arranging the metal reinforcing member 190.

[0308] The first method: referring to Figure 11 , the metal reinforcing member 190 is located above the shared top conductive layer 60;

[0309] The second method: the metal reinforcing member 190 is located below the shared top conductive layer 60.

[0310] Further, the metal reinforcing member 190 surrounds the periphery of one sub-pixel 50 below the shared top conductive layer 60.

[0311] In some embodiments, the light-transmitting pixel and the associated pixel can share one top conductive layer 60, and the shared top conductive layer 60 can be electrically connected to the metal reinforcing member 190.

[0312] In the top common electrode structure: if the top ends of the sub-pixels in at least two different pixel layers in the parent pixel are each provided with a top conductive layer 60 without sharing, at least one top conductive layer 60 can be electrically connected to the metal reinforcing member 190, and the metal reinforcing member 190 can also be located above (see Figure 23 ) or below the top conductive layer 60 to which it is electrically connected.

[0313] In the bottom common electrode structure, the top of the sub-pixel in the parent pixel located in different pixel layers is provided with a top conductive layer 60, so that at least one top conductive layer 60 is electrically connected with the metal reinforcing member 190, and the metal reinforcing member 190 can be located above or below the electrically connected top conductive layer 60.

[0314] Embodiment six

[0315] In this embodiment, the top of the sub-pixel 50 is in contact with the top conductive layer 60 to achieve electrical connection, which can adopt the following electrical connection forms:

[0316] The first one: referring to Figure 1 and Figure 18 , only the top of the sub-pixel 50 is in contact with the electrically connected top conductive layer 60; at this time, the top of the sub-pixel can be partially exposed or completely exposed, and the exposed area is in contact with the corresponding top conductive layer 60 to achieve electrical connection.

[0317] The second one: referring to Figures 19-20 , the top and at least part of the sidewall of the sub-pixel 50 are in contact with the electrically connected top conductive layer 60; at this time, in addition to the top of the sub-pixel 50 being exposed, at least part of the sidewall of the sub-pixel 50 is also exposed, thereby forming an exposed area together to be in contact with the corresponding top conductive layer 60 to achieve electrical connection. This way can increase the electrical contact area, facilitate current expansion, and enhance the current conduction capability.

[0318] It can be understood that in specific arrangement, the first electrical connection form can be adopted in one sub-pixel in the parent pixel, and the second electrical connection form can be adopted in other sub-pixels, or the same electrical connection form can be adopted in each sub-pixel, which can be selected according to actual needs.

[0319] The micro display device structure of the above embodiments can not only be applied to a two-layer structure with two pixel layers, but also can be applied to a three-layer structure with three pixel layers, and can be applied to a structure with more than three layers.

[0320] The micro display device of each of the above embodiments simplifies the electrical connection structure, is more conducive to preparation, can effectively increase the effective light emitting area of the lower sub-pixel, and is more conducive to the best light distribution effect, thereby effectively improving the light efficiency and reliability of the display device.

[0321] All the optional technical solutions described above can be combined to form optional embodiments of the present application, that is, any number of embodiments can be combined to meet the needs of different application scenarios, which are all within the protection scope of the present application, and will not be described one by one here.

[0322] It should be noted that the above-mentioned embodiments are only examples for clearly illustrating the present application and are not intended to limit the present application. Based on the above-mentioned embodiments, other different forms of changes or modifications can be made by those skilled in the art. Here, all the embodiments are not required to be enumerated. The obvious changes or modifications derived from the above-mentioned embodiments are still within the scope of the present application.

Claims

1. A mother pixel arrangement structure, characterized by: The display panel comprises: a driving backplate; a plurality of sub-pixels, at least two of which are located in different pixel layers; all the pixel layers are sequentially stacked from bottom to top above the driving backplate; of the two sub-pixels located in different pixel layers, one sub-pixel in the upper pixel layer is internally provided with a light-transmitting hole to form a light-transmitting pixel, the periphery of the light-transmitting hole of the light-transmitting pixel forms a peripheral light-emitting area, the projection area of the light-transmitting hole on the driving backplate is a second projection area, the other sub-pixel in the lower pixel layer is an associated pixel, the projection area of the associated pixel on the driving backplate is a first projection area, the first projection area and the second projection area at least partially overlap, so that the light emitted by the associated pixel at least partially passes through the light-transmitting hole of the light-transmitting pixel.

2. The mother pixel arrangement structure according to claim 1, wherein: The overlapping area of the first projection area and the second projection area is not less than 1 / 2 of the area of the first projection area.

3. The mother pixel arrangement structure according to claim 2, wherein: The first projection area is completely located inside the second projection area.

4. The mother pixel arrangement structure of claim 1, wherein: The light-transmitting pixel and the associated pixel are coaxially arranged.

5. The mother pixel arrangement structure according to claim 4, characterized in that: At least two associated pixels located in different pixel layers are located below the same light-transmitting hole of the light-transmitting pixel.

6. The mother pixel arrangement structure of claim 1, wherein: The light-transmitting pixel and the at least one associated pixel below are arranged in different axes.

7. The mother pixel arrangement structure according to claim 6, characterized in that: The same light-transmitting pixel is provided with a plurality of light-transmitting holes, and the associated pixel and the light-transmitting hole of the light-transmitting pixel correspond one by one.

8. The mother pixel arrangement structure of claim 1, wherein: The periphery of the light-transmitting pixel is surrounded by a peripheral air separation layer.

9. The mother pixel arrangement structure according to claim 8, characterized in that: The periphery of the light-transmitting pixel is also surrounded by a partition wall, and the light-transmitting pixel and the peripheral partition wall have the peripheral air separation layer therebetween.

10. The mother pixel arrangement structure of claim 1, wherein: The light-transmitting pixel is internally provided with an inner air separation layer.

11. The mother pixel arrangement structure of claim 1, wherein: The light-emitting colors of the at least two sub-pixels located in different pixel layers are different.

12. A microdisplay device, characterized by: The display panel comprises at least one mother pixel, each of which comprises a plurality of sub-pixels, and each of the mother pixels adopts the mother pixel arrangement structure of any one of claims 1-11.

13. The microdisplay device of claim 12, wherein: The bottom end of each of the plurality of sub-pixels located in different pixel layers in the mother pixel is respectively electrically connected to a corresponding first type of electrode contact, and the top ends of the plurality of sub-pixels are electrically connected to a corresponding second type of electrode contact after being interconnected by a top conductive layer to form a top common electrode structure, wherein the polarities of the first type of electrode contact and the second type of electrode contact are opposite.

14. The microdisplay device of claim 13, wherein: In the top common electrode structure, of the two sub-pixels located in different pixel layers, one sub-pixel is the light-transmitting pixel, and the other sub-pixel is the associated pixel, the bottom end of the light-transmitting pixel is electrically connected to the corresponding first type of electrode contact through a non-common electrode conductive member, and the non-common electrode conductive member connected to the light-transmitting pixel is located in the periphery of the associated pixel.

15. The microdisplay device of claim 13, wherein: The periphery of the associated pixel has an insulating filling area, and the non-common electrode conductive member connected to the light-transmitting pixel passes through the insulating filling area.

16. The microdisplay device of claim 13, wherein: The periphery of the associated pixel has a compound semiconductor area, and the non-common electrode conductive member connected to the light-transmitting pixel passes through the compound semiconductor area.

17. The microdisplay device of claim 16, wherein, The compound semiconductor area is annular, and the associated pixel is surrounded inside the corresponding compound semiconductor area.

18. The microdisplay device of claim 16, wherein, The peripheral of the associated pixel is surrounded by a plurality of compound semiconductor regions, and the plurality of compound semiconductor regions are distributed in a circumferential direction.

19. The microdisplay device of claim 16, wherein: The peripheral of the associated pixel is also surrounded by a peripheral air gap between the associated pixel and the compound semiconductor region of the peripheral.

20. The microdisplay device of claim 14, wherein: In the top common electrode structure, at least one pixel layer is a two-type pixel layer, the bottom end of the sub-pixel in the two-type pixel layer is electrically connected to the corresponding first electrode contact through a bottom conductive layer, and the bottom surface of the sub-pixel in the two-type pixel layer is completely covered by the bottom conductive layer.

21. The microdisplay device of claim 20, wherein: The pixel layer where the light-transmitting pixel is located is the two-type pixel layer, and the bottom end of the light-transmitting pixel in the two-type pixel layer is electrically connected to the corresponding non-common electrode conductive member through a bottom conductive layer.

22. The microdisplay device of claim 21, wherein: The bottom conductive layer adopts a metal bonding layer, a first peripheral metal fence and a first inner peripheral metal fence are formed above the bottom conductive layer of the light-transmitting pixel in the two-type pixel layer, the peripheral of the light-transmitting pixel in the two-type pixel layer is surrounded by the first peripheral metal fence, and the inside of the light-transmitting hole is surrounded by the first inner peripheral metal fence.

23. The microdisplay device of claim 14, wherein: At least one pixel layer is a one-type pixel layer, the bottom end of the sub-pixel in the one-type pixel layer is electrically connected to the corresponding first electrode contact through an independent conductive block, and the conductive block corresponds to the first electrode contact one by one; wherein the conductive block has an electrical contact area for electrical connection with the bottom end of the corresponding sub-pixel in the one-type pixel layer, and the area of the electrical contact area is smaller than the area of the bottom surface of the corresponding sub-pixel in the one-type pixel layer.

24. The microdisplay device of claim 23, wherein: The bottom end of the sub-pixel in the one-type pixel layer is electrically connected through a metal reflection layer and the corresponding conductive block.

25. The microdisplay device of claim 24, wherein: The pixel layer where the light-transmitting pixel is located is the one-type pixel layer, and the bottom end of the light-transmitting pixel in the one-type pixel layer is electrically connected to the corresponding non-common electrode conductive member in turn through the metal reflection layer and the conductive block.

26. The microdisplay device of claim 24, wherein: A peripheral reflection part and an inner peripheral reflection part are formed above the metal reflection layer of the light-transmitting pixel in the one-type pixel layer, the peripheral of the light-transmitting pixel in the one-type pixel layer is surrounded by the peripheral reflection part, and the inside of the light-transmitting hole is surrounded by the inner peripheral reflection part.

27. The microdisplay device of claim 13, wherein: In the top common electrode structure, a display area is divided on the driving back plate, all the parent pixels constitute a pixel array, the projection of the pixel array on the driving back plate is located inside the display area, the second electrode contact is arranged inside the display area, and / or the second electrode contact is arranged outside the display area, and the second electrode contact is electrically connected to the top conductive layer of the top end of a plurality of sub-pixels through a common electrode conductive member.

28. The microdisplay device of claim 27, wherein: In the top common electrode structure, the top end of the sub-pixel in the parent pixel located in different pixel layers is separately provided with the top conductive layer without sharing, and the top conductive layer in the same layer pixel layer is located in the upper part of the electrically connected sub-pixel.

29. The microdisplay device of claim 28, wherein: In the top common electrode structure, the top ends of the sub-pixels of at least two different pixel layers in the parent pixel are each provided with a top conductive layer without sharing, and the common electrode conductive member comprises an interconnecting conductive part, and the two adjacent top conductive layers are electrically connected through the interconnecting conductive part.

30. The microdisplay device of claim 27, wherein: In the top common electrode structure, at least two sub-pixels in the parent pixel share one top conductive layer, and the sub-pixels sharing the top conductive layer are respectively located in different pixel layers.

31. The microdisplay device of claim 27, wherein: In the top common electrode structure, the bottom end of the common electrode conductive member directly contacts the corresponding second type of electrode contact.

32. The microdisplay device of claim 12, wherein: The top ends of each of the plurality of sub-pixels in different pixel layers in the parent pixel are each electrically connected to the corresponding second type of electrode contact through a top conductive layer, and the bottom ends of the plurality of sub-pixels are electrically connected after being conductively interconnected to form a bottom common electrode structure, wherein the polarities of the first type of electrode contact and the second type of electrode contact are opposite.

33. The microdisplay device of claim 32, wherein: In the bottom common electrode structure, of the two sub-pixels in different pixel layers, one is the light-transmitting pixel and the other is the associated pixel, the bottom end of the light-transmitting pixel and the bottom end of the associated pixel are electrically connected through a common electrode conductive member, and the common electrode conductive member connected to the light-transmitting pixel is located in the periphery of the associated pixel.

34. The microdisplay device of claim 33, wherein: The periphery of the associated pixel has an insulating filling area, and the common electrode conductive member connected to the light-transmitting pixel passes through the insulating filling area.

35. The microdisplay device of claim 33, wherein: The periphery of the associated pixel has a compound semiconductor area, and the common electrode conductive member connected to the light-transmitting pixel passes through the compound semiconductor area.

36. The microdisplay device of claim 33, wherein: The top conductive layer of the associated pixel is electrically connected to the corresponding second type of electrode contact through a non-common electrode conductive member, and the top conductive layer of the top conductive layer of the associated pixel is electrically connected to the corresponding non-common electrode conductive member after passing through the light-transmitting hole of the light-transmitting pixel.

37. The microdisplay device of claim 32, wherein: In the bottom common electrode structure, the driving backplane is divided into a display area, and all the parent pixels form a pixel array, the projection of the pixel array on the driving backplane is located inside the display area, and the first type of electrode contact is arranged inside the display area and / or the first type of electrode contact is arranged outside the display area.

38. The microdisplay device of claim 32, wherein: In the bottom common electrode structure, the top ends of the sub-pixels of the parent pixel in different pixel layers are each provided with a top conductive layer, and the top conductive layers in the same pixel layer are located in the upper part of the electrically connected sub-pixel.

39. The microdisplay device of any one of claims 13 or 32, wherein: At least one of the top conductive layers is electrically connected to a metal reinforcing member, and the metal reinforcing member is located above or below the electrically connected top conductive layer.

40. The microdisplay device of any one of claims 13 or 32, wherein: The top end of the sub-pixel is in contact with the electrically connected top conductive layer, or the top end of the sub-pixel and at least part of the side wall are in contact with the electrically connected top conductive layer.

41. The microdisplay device of claim 12, wherein: The upper part of the uppermost sub-pixel is provided with a lens, and the lens covers at least one of the sub-pixels in the parent pixel.

Images