Solar cell, preparation method thereof and photovoltaic module

Abstract

The invention discloses a solar cell, a preparation method thereof and a photovoltaic module. The solar cell preparation method comprises the following steps: providing a substrate, and preparing a first transmission layer on the substrate; a crystallization control wet film and a perovskite precursor wet film are sequentially formed on the surface of the side, away from the substrate, of the first transmission layer, annealing is carried out, and a perovskite layer is prepared; wherein the crystallization control wet film comprises an anti-solvent with a low boiling point, the perovskite precursor wet film comprises a perovskite precursor solution, and a solvent of the perovskite precursor solution comprises an organic solvent with a high boiling point; and forming a second transmission layer and an electrode on one side, far away from the hole transmission layer, of the perovskite layer. Extracting a high-boiling-point solvent in the perovskite precursor solution by using a low-boiling-point anti-solvent, so that the supersaturation degree of a bottom interface is suddenly increased; and a seed layer with consistent orientation is generated as a perovskite epitaxial growth template to guide preferred orientation of upper crystal grains and inhibit defects, so that the quality of the whole perovskite thin film is effectively improved.

Description

Technical Field

[0001] This application relates to the field of photovoltaic technology, and in particular to a solar cell, a method for preparing the same, and a photovoltaic module. Background Technology

[0002] Perovskite solar cells are a novel type of photovoltaic device. Their core is a perovskite structure material as the light-absorbing layer, efficiently capturing light energy and converting it into electrical energy. Their conversion efficiency has rapidly increased to over 25% in recent years, approaching that of traditional silicon-based cells. Furthermore, they can be fabricated using low-cost processes such as solution coating, making them suitable for flexible and tandem photovoltaic applications. However, when using one-step slot coating to prepare the perovskite layer, high-boiling-point solvents such as dimethyl sulfoxide and N,N-dimethylformamide are often used as solvents in the perovskite precursor solution. These solvents accumulate at the bottom of the perovskite film during preparation, leading to defects such as δ-phase, impurity phases, pinholes, and cracks. Ultimately, this reduces the fill factor and stability of the perovskite solar cell.

[0003] Traditional methods involve dripping or spraying antisolvents (such as ether or chlorobenzene) onto the surface of a perovskite wet film. However, since the extraction direction is from top to bottom, it is still impossible to remove the bottom solvent in the perovskite precursor solution simultaneously. Furthermore, a vertical concentration gradient is formed, resulting in uneven grain size of the perovskite material and numerous defects in the formed perovskite film, which leads to a decrease in the fill factor and stability performance of the solar cell. Summary of the Invention

[0004] Based on this, this application provides a high-quality perovskite film layer, a solar cell with good filler factor and stability, a method for preparing the same, and a photovoltaic module.

[0005] This application provides a method for preparing a solar cell, comprising the following steps:

[0006] A substrate is provided, wherein the substrate is a conductive substrate or a battery substrate;

[0007] A first carrier transport layer is fabricated on the substrate;

[0008] A crystallization control wet film and a perovskite precursor wet film are sequentially formed on the surface of the first carrier transport layer away from the substrate, and then annealed to prepare a perovskite layer.

[0009] The material of the crystallization control wet film includes an antisolvent, and the material of the perovskite precursor wet film includes a perovskite precursor solution. The boiling point of the antisolvent is less than or equal to the boiling point of the organic solvent in the perovskite precursor solution.

[0010] A second carrier transport layer and an electrode are sequentially formed on the side of the perovskite layer away from the first carrier transport layer, wherein one of the first carrier transport layer and the second carrier transport layer is a hole transport layer and the other is an electron transport layer.

[0011] In one embodiment, one or both of the following conditions are met:

[0012] (1) The antisolvent has a boiling point of 30℃~190℃ at 101kPa;

[0013] (2) The organic solvent of the perovskite precursor solution has a boiling point of 150℃~190℃ at 101kPa.

[0014] In one embodiment, the material of the crystallization-controlled wet film further includes a passivating agent, wherein the molar ratio of the passivating agent to the antisolvent is (0.5~2):(98~100).

[0015] In one embodiment, the passivating agent includes one or more of methyl iodide, formamidinium hydroiodate, phenylethyl iodide, butyl ammonium iodide, hexyl hydrobromide, trimethyl(2-hydroxyethyl) ammonium iodide, and 1,3-propanediamine dihydroiodate.

[0016] In one embodiment, the crystallization-controlled wet film satisfies one or more of the following conditions:

[0017] (1) The methods for forming the crystallization control wet film include slot coating, blade coating, spin coating, spray pyrolysis or inkjet printing.

[0018] (2) The thickness of the crystallization-controlled wet film is 0.5µm~5µm;

[0019] (3) The antisolvent includes one or more of chlorobenzene, chloroform, ethyl acetate, 1-butanol, petroleum ether, ethanol, isopropanol, anisole, o-dichlorobenzene, toluene, bromobenzene and iodobenzene.

[0020] In one embodiment, the conditions for forming the perovskite precursor wet film satisfy one or more of the following conditions:

[0021] (1) The method for forming the wet film of the perovskite precursor includes slot coating, blade coating or spin coating;

[0022] (2) The thickness of the wet film of the perovskite precursor is 100µm~300µm;

[0023] (3) The perovskite precursor solution further includes a perovskite material, which includes a first precursor compound and a second precursor compound. The first precursor compound has the chemical formula AX, and the second precursor compound has the chemical formula BX2. Among them, A ion is selected from one or more of formamidinium ion, cesium ion, methylamine ion, dimethylamine ion, guanidine ion, potassium ion and rubidium ion, B ion is one or more of lead ion and tin ion, and X ions are each independently selected from one or more of bromide ion, iodide ion, chloride ion and thiocyanate ion. The concentration of A ion and B ion in the perovskite precursor solution is 1 mol / L-2 mol / L.

[0024] (4) The organic solvent includes one or more of N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, dimethyl sulfoxide, 2-methoxyethanol and N,N'-dimethylacrylurea.

[0025] In one embodiment, annealing satisfies one or both of the following conditions:

[0026] (1) The annealing time is 5 min to 30 min;

[0027] (2) The annealing temperature is 90°C~150°C.

[0028] In one embodiment, the second carrier transport layer is an electron transport layer, and a passivation layer is further formed on the side of the perovskite layer away from the second carrier transport layer before the second carrier transport layer is formed.

[0029] This application also provides a solar cell prepared according to the preparation method described above.

[0030] Furthermore, this application also provides a photovoltaic module, including the solar cell as described above.

[0031] The method for fabricating solar cells provided in this application first forms a crystallization-controlled wet film containing an antisolvent. During the formation of the perovskite precursor wet film, the low-boiling-point antisolvent continuously evaporates, instantly extracting the organic solvent from the perovskite precursor solution. This causes a sudden increase in the supersaturation of the perovskite precursor solute at the bottom interface of the perovskite precursor, generating a dense α-phase perovskite seed layer with consistent orientation. During the annealing process, the perovskite seed layer serves as a template for subsequent perovskite epitaxial growth, guiding the preferred orientation of the upper grains and suppressing defects. This effectively improves the overall quality of the perovskite film while also protecting the first carrier transport layer of the substrate from damage by the perovskite precursor solution. Detailed Implementation

[0032] To make the objectives, technical solutions, and advantages of this application clearer and to provide a more thorough and comprehensive understanding of the disclosure of this application, the technical solutions of this application will be clearly and completely described below in conjunction with specific embodiments. The described embodiments are only a part of the embodiments of this application, and not all of them.

[0033] The implementation of this application is described in detail below. This embodiment is implemented based on the technical solution of this application, and provides detailed implementation methods and specific operation processes, but the protection scope of this application is not limited to the following embodiment.

[0034] Unless otherwise defined, all technical and scientific terms used in this application have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in this application and in its specification is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0035] Unless otherwise stated or in case of conflict, the terms or phrases used in this application shall have the following meanings:

[0036] In this application, the terms "multiple" or "various" are used unless otherwise specified, referring to a quantity greater than or equal to 2. For example, "at least one" or "at least one" means one or more than two.

[0037] In this application, terms such as "further" and "especially" are used to describe purposes and indicate differences in content, but should not be construed as limiting the scope of protection of this application.

[0038] In this application, the technical features described in an open-ended manner include both closed technical solutions consisting of the listed features and open technical solutions that include the listed features.

[0039] In this application, when numerical intervals (i.e., numerical ranges) are mentioned, unless otherwise specified, the distribution of selectable numerical values ​​within the numerical interval is considered continuous, and includes the two endpoints of the numerical interval (i.e., the minimum and maximum values), as well as every numerical value between these two endpoints. Unless otherwise specified, when a numerical interval refers only to integers within that numerical interval, it includes the two endpoint integers of the numerical range, as well as every integer between the two endpoints, which is equivalent to directly listing every integer. When multiple numerical ranges are provided to describe features or characteristics, these numerical ranges can be merged. In other words, unless otherwise specified, the numerical ranges disclosed in this application should be understood to include any and all subranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, percentage, ratio, etc. The term "numerical interval" can be broadly included to include numerical interval types such as percentage intervals, ratio intervals, and proportion intervals.

[0040] In this application, unless otherwise specified, temperature parameters are permitted to be either isothermal or vary within a certain temperature range. It should be understood that isothermal treatment allows temperature fluctuations within the precision range of the instrument control. Fluctuations are permitted within ranges such as ±5℃, ±4℃, ±3℃, ±2℃, and ±1℃.

[0041] Unless otherwise specified, the percentage content mentioned in this application refers to mass percentage for solid-liquid mixtures and solid-phase-solid mixtures, and volume percentage for liquid-phase-liquid mixtures.

[0042] In this application, the temperature parameter, unless otherwise specified, is allowed to be either constant temperature treatment or treatment within a certain temperature range. Constant temperature treatment allows temperature fluctuations within the precision range controlled by the instrument. The room temperature in this application refers to 0-40℃, preferably 10℃-35℃, and more preferably 20℃-30℃.

[0043] This application provides a method for preparing a solar cell, comprising the following steps:

[0044] Provide a substrate, which may be a conductive substrate or a battery substrate;

[0045] A first carrier transport layer is fabricated on the substrate;

[0046] A crystallization control wet film and a perovskite precursor wet film are sequentially formed on the surface of the first carrier transport layer away from the substrate, and then annealed to prepare a perovskite layer.

[0047] Among them, the material of the crystallization control wet film includes an antisolvent, and the material of the perovskite precursor wet film includes a perovskite precursor solution. The boiling point of the antisolvent is less than or equal to the boiling point of the organic solvent in the perovskite precursor solution.

[0048] A second carrier transport layer and an electrode are sequentially formed on the side of the perovskite layer away from the first carrier transport layer, wherein one of the first carrier transport layer and the second carrier transport layer is a hole transport layer and the other is an electron transport layer.

[0049] The method for fabricating solar cells provided in this application first forms a crystallization-controlled wet film containing an antisolvent. During the formation of the perovskite precursor wet film, the low-boiling-point antisolvent continuously evaporates, instantly extracting the organic solvent from the perovskite precursor solution. This causes a sudden increase in the supersaturation of the perovskite precursor solute at the bottom interface of the perovskite precursor, generating a dense α-phase perovskite seed layer with consistent orientation. During the annealing process, the perovskite seed layer serves as a template for subsequent perovskite epitaxial growth, guiding the preferred orientation of the upper grains and suppressing defects. This effectively improves the overall quality of the perovskite film while also protecting the first carrier transport layer of the substrate from damage by the perovskite precursor solution.

[0050] Understandably, the substrate can be a conductive substrate, which is a structure in which a transparent conductive layer is formed on the substrate. The solar cell prepared is a single-junction perovskite solar cell. The transparent conductive layer includes, but is not limited to, ITO, IZO, IWO, FTO, ICO, AZO, ATO, and GZO. The preparation method includes, but is not limited to, magnetron sputtering (PVD) and reactive plasma deposition (RPD). The thickness is 20nm~100nm.

[0051] An electrode is disposed on the side of the substrate away from the transparent conductive layer. The electrode material includes metals, specifically at least one of the following metals: copper (Cu), aluminum (Al), silver (Ag), nickel (Ni), cobalt (Co), gold (Au), molybdenum (Mo), or chromium (Cr). For example, a combination of Ag, copper, Cu, and Al; a combination of Ag and Ni; a combination of Co and Au; a combination of Mo and Cr; or a combination of Cu, Al, Ag, Ni, Co, Au, Mo, and Cr.

[0052] Furthermore, the preparation methods of metal electrodes include, but are not limited to, vapor deposition, screen printing, electroplating, laser technology, PVD (Physical Vapor Deposition), and inkjet printing, with electrode thickness ranging from 100 nm to 20 μm.

[0053] Furthermore, the substrate can also be a battery substrate, and the resulting solar cell is a tandem cell. The battery substrate can be a crystalline silicon solar cell, a CIGS thin-film solar cell, a cadmium telluride thin-film solar cell, a III-V thin-film solar cell, or a perovskite solar cell.

[0054] In the tandem solar cell prepared in this way, a transparent conductive layer and a metal electrode are also disposed on the electron transport layer. The transparent conductive layer includes, but is not limited to, ITO, IZO, IWO, FTO, ICO, and AZO, and is prepared by methods including, but not limited to, magnetron sputtering (PVD) and reactive plasma deposition (RPD), with a thickness of 10 nm to 100 nm. The materials of the metal electrode include, but are not limited to, silver, copper, and aluminum, such as silver mesh grid lines.

[0055] Furthermore, the substrate can also be polyimide (PI), polyester (PET), polyethylene naphthalate (PEN), or metal foil, thus preparing a flexible solar cell.

[0056] In a specific example, the material of the hole transport layer further includes one or more of transition metal oxides, polymer materials, and small organic molecule materials.

[0057] Transition metal oxides include at least one of nickel oxide, titanium oxide, molybdenum trioxide, tungsten trioxide, and copper oxide. Preparation processes for transition metal oxides include solution methods, physical vapor deposition (PVD), atomic layer deposition (ALD), and inkjet printing. The thickness of the transition metal oxide is 10-100 nm, preferably 20-50 nm.

[0058] Polymer materials include one or more of poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS), Spiro-OMeTAD (2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene), P3HT: full name poly(3-hexylthiophene), and PTAA: i.e. poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine).

[0059] Organic small molecule materials are often referred to as SAM (self-assembled monolayer) materials. SAM molecules can form a monolayer on the substrate surface through self-assembly, thereby playing a role in regulating interface properties, promoting charge transport, and reducing non-radiative recombination.

[0060] SAM materials typically possess a specific molecular structure. SAM molecules generally consist of anchoring groups, linking groups, and terminal groups. Anchoring groups usually contain polar atoms (such as oxygen, nitrogen, and sulfur) or active functional groups, capable of forming chemical bonds (such as covalent bonds, coordinate bonds, or strong hydrogen bonds) with hydroxyl groups (-OH) or metal atoms on the TCO surface. Common types of anchoring groups include carboxyl groups (-COOH), phosphonic acid groups (-PO(OH)2), hydroxyl groups (-OH), and thiol groups (-SH). The bonding strength of the anchoring groups directly determines the stability of the SAM (such as water resistance and heat resistance); if the bonding is too weak, the SAM is prone to detachment, leading to device performance degradation.

[0061] Terminal groups typically contact the perovskite layer, and their main function is to regulate the interfacial energy level matching, wettability, and charge extraction efficiency between SAM and the perovskite layer. Common types of terminal groups are amino (-NH2), cyano (-CN), alkyl (-CH3), and conjugated groups. Among these, common types of conjugated structures are benzene rings and thiophenes.

[0062] The linking group is the "backbone" in a SAM molecule that connects the anchoring group and the terminal group. It is usually composed of a carbon chain, commonly C6-C. 18 The alkyl chain. The length of the linking group determines the spatial distance between the anchoring group (TCO side) and the terminal group (perovskite side). The length and chemical properties of the linking group also affect the order, conductivity, and steric hindrance of the SAM.

[0063] Common SAM materials include: [2-(9H-carbazole-9-yl)ethyl]phosphonic acid (2PACz), [2-(3,6-diphenyl-9H-carbazole-9-yl)ethyl]phosphonic acid (Me-2PACz), (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl)phosphonic acid (MeO-2PACz), 2-(3,6-dibromo-9H-carbazole-9-yl)ethyl]phosphonic acid (Br-2PACz), 2-(3,6-dichloro-9H-carbazole-9-yl)ethyl]phosphonic acid (Cl-2PACz), 2-(3,6-difluoro-9H- [Carbazole-9-yl)ethyl]phosphonic acid (F-2PACz), [4-(9H-carbazole-9-yl)ethyl]phosphonic acid (4PACz), [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (Me-4PACz), [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid (MeO-4PACz), [4-(3,6-dibromo-9H-carbazole-9-yl)butyl]phosphonic acid (Br-4PACz), (4-(3,6-dichloro-9H-carbazole-9-yl)butyl)phosphonic acid (Cl-4PACz) (4-(3,6-difluoro-9H-carbazole-9-yl)butyl)phosphonic acid (F-4PACz), [4-(7H-dibenzocarbazole-7-yl)butyl]phosphonic acid (4PADCB), [4-(2,7-dibromo-9,9-dimethylacridin-10(9-hydro)-yl)butyl]phosphonic acid (2Br-4DMAcPA), sodium 4-phenylbutyrate (4-PBA), (2-(4-(bis(4-methoxyphenyl)amino)phenyl)-1-cyanovinyl)phosphonic acid (MPA-CPA), [2-(3,7-dibromo-10H-phenthiazin-10-yl)ethyl]phosphonic acid (Br-2EPT), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TAPC), etc.

[0064] In some optional embodiments, the hole transport layer includes a SAM material layer, the fabrication process of which is as follows:

[0065] The SAM material is mixed with a solvent and stirred at room temperature in a glove box under a nitrogen atmosphere until completely dissolved to obtain a hole transport layer solution. The concentration of the SAM material in the hole transport layer solution is 0.1 mg / ml to 3 mg / mL, preferably 0.5 mg / ml to 1 mg / mL.

[0066] In a glove box under a nitrogen atmosphere, a hole transport layer solution is coated to obtain a wet film; then it is placed on a hot table at 80℃~120℃ and heated and annealed for 5 min~20 min to form a SAM material layer.

[0067] In one specific example, during the preparation of the perovskite layer, the antisolvent includes one or more of chlorobenzene, chloroform, ethyl acetate, 1-butanol, petroleum ether, ethanol, isopropanol, anisole, o-dichlorobenzene, toluene, bromobenzene, and iodobenzene.

[0068] In a specific example, the crystallization control wet film also includes a passivating agent. Understandably, the crystallization control wet film can use an antisolvent alone or a mixture of an antisolvent and a passivating agent. Further, the crystallization control wet film is a mixture of a passivating agent and an antisolvent, with a molar ratio of (0.5~2):(98~99.5). Specifically, the crystallization control wet film is a mixture of a passivating agent and an antisolvent, and the molar ratio of the passivating agent to the antisolvent can be, but is not limited to, 0.5:99.5, 0.6:99.4, 0.7:99.3, 0.8:99.2, 0.9:99.1, 1:99, 1.1:98.9, 1.2:98.8, 1.3:98.7, 1.4:98.6, or 1.5:99.5. If the ratio of antisolvent and passivator in the controlled wet film is not within the above range, it will reduce the carrier transport performance of the battery device and also affect the nucleation and growth of perovskite in the perovskite film.

[0069] In one specific example, the passivating agent includes one or more of methylamine iodide (MAI), formamidinium hydroiodide (FAI), phenylethylamine iodide (PEAI), butylamine iodide (BAI), hexyl hydrobromide (HABr), trimethyl(2-hydroxyethyl)ammonium iodide (choline iodide, ChI), and 1,3-propanediamine dihydroiodide (PDAI2).

[0070] In a specific example, methods for forming a crystallization-controlled wet film include slot coating, blade coating, spin coating, spray pyrolysis, or inkjet printing.

[0071] Furthermore, the method for forming the crystallization-controlled wet film is a slot coating method, specifically, the slot solution extrusion speed is 0.5 mm / min. -1 ~2mmin -1 The spin coating speed is 1000rpm~3000rpm, and the spin coating time is 10s~20s.

[0072] In a specific example, the thickness of the crystallization-controlled wet film is 0.5µm to 5µm. Specifically, the thickness of the crystallization-controlled wet film can be, but is not limited to, 0.5µm, 1µm, 1.5µm, 2µm, 2.5µm, 3µm, 3.5µm, 4µm, 4.5µm, or 5µm. When the thickness of the crystallization-controlled wet film is too thick, the crystal growth inside the perovskite film is uneven, and the stress generated during the cooling process induces microcracks and pinholes, resulting in poor film quality and a significant increase in the perovskite defect state density.

[0073] Understandably, perovskite materials are perovskite-structured substances, and the general structural formula of perovskite-structured substances is ABX3; wherein, the A-site cation is usually a monovalent cation, including at least one of a monovalent metal cation and a monovalent organic cation, wherein the monovalent metal cation is selected from cesium ions (Cs). + ), rubidium ions (Rb + Lithium ion (Li) + Sodium ions (Na) + ), potassium ions (K) + ), thallium ions (Tl) + One or more of the following, wherein the monovalent organic cation is selected from ammonium ions (NH4+). + ), Methylamine ion (MA) (CH3NH3) + ), ethylammonium ion (CH3CH2NH3) + ), dimethylamine ion ((CH3)2NH2) + ), trimethylammonium ion ((CH3)3NH + ), tetramethylammonium ion ((CH3)4N + ), formamidinium ion (FA) (HC(NH2)2) + ), Methylformamidinium ion (CH3C(NH2)2 + Acetamidinium ion (H3C2(NH2)2) + ), guanidine ion (C(NH2)3) + One or more of the following. The B-site cation is usually a divalent metal cation, selected from lead ions (Pb). 2+ ), tin ions (Sn) 2+ or germanium ions (Ge 2+ One or more of the following. The X-position anion includes halide anions, such as bromide ions (Br₂). - ), iodide ions (I - ), chloride ions (Cl) - ), thiocyanate ions (SCN) - ), tetrafluoroborate ion (BF4) - ) and hexafluoroborate ions (BF6) -) or more of those in. Exemplarily, the perovskite-structured material is selected from FAPbI3, MAPbI3, CsPbI3, and Cs x FA 1-x Pb(Br y I 1-y )3, where 0.1 < x < 0.3 and 0.15 < y < 0.4. The present application does not limit the specific composition of the perovskite-structured material.

[0074] In a specific example, the method for forming the perovskite precursor wet film includes slot coating, blade coating, or spin coating.

[0075] In a specific example, the thickness of the perovskite precursor wet film is 100 µm to 300 µm. Specifically, the thickness of the perovskite precursor wet film can be, but is not limited to, 100 µm, 110 µm, 120 µm, 130 µm, 140 µm, 150 µm, 160 µm, 170 µm, 180 µm, 190 µm, 200 µm, 210 µm, 220 µm, 230 µm, 240 µm, 250 µm, 260 µm, 270 µm, 280 µm, 290 µm, or 300 µm.

[0076] In a specific example, the perovskite precursor solution further includes a perovskite material, which includes a first precursor compound and a second precursor compound. The chemical formula of the first precursor compound is AX, and the chemical formula of the second precursor compound is BX2; where the A ion is selected from one or more of formamidinium ion, cesium ion, methylammonium ion, dimethylammonium ion, guanidinium ion, potassium ion, and rubidium ion, the B ion is one or more of lead ion and tin ion, and the X ion is independently selected from one or more of bromide ion, iodide ion, chloride ion, and thiocyanate ion; the concentrations of the A ion and the B ion in the perovskite precursor solution are each independently 1 mol / L to 2 mol / L. It can be understood that the molar ratio of the first precursor compound to the second precursor compound is usually 1:1 to control the molar ratio of the A ion, B ion, and X ion to 1:1:3. Thus, after annealing, a perovskite-structured material with the general structural formula ABX3 can be obtained to form a perovskite layer.

[0077] Furthermore, the molar ratio of perovskite material to antisolvent in the perovskite precursor wet film is (25~100):1. Insufficient antisolvent leads to inadequate solvent extraction from the perovskite precursor solution, leaving insufficient antisolvent to fully trigger the instantaneous crystallization of the perovskite seed layer at the bottom interface of the wet film. The remaining solvent keeps the perovskite precursor wet film in a liquid state for an extended period during annealing, resulting in random and slow crystallization from the top of the perovskite film or the bulk phase. This ultimately results in a perovskite film with fine grains, numerous grain boundaries, and disordered orientation. Excessive antisolvent, while removing solvent from the perovskite precursor solution, also directly causes the perovskite components to precipitate instantaneously and in a non-equilibrium manner. This makes it easy for pores and cracks to form during solvent escape and crystallization, resulting in a wide grain size distribution and poor coverage of the perovskite film, affecting its morphology and electrical properties.

[0078] In one specific example, the organic solvent includes one or more of N,N-dimethylformamide (DMF), N,N-dimethylacetamide (DMAc), N-methylpyrrolidone (NMP), dimethyl sulfoxide (DMSO), 2-methoxyethanol (2-Me), and N,N'-dimethylacrylurea (DMPU).

[0079] In a specific example, the annealing time is 5 min to 30 min. Specifically, the annealing time can be, but is not limited to, 5 min, 6 min, 7 min, 8 min, 9 min, 10 min, 11 min, 12 min, 13 min, 14 min, 15 min, 16 min, 17 min, 18 min, 19 min, 20 min, 21 min, 22 min, 23 min, 24 min, 25 min, 26 min, 27 min, 28 min, 29 min, or 30 min.

[0080] In a specific example, the annealing temperature is 90°C to 150°C. Specifically, the annealing temperature can be, but is not limited to, 90°C, 95°C, 100°C, 105°C, 110°C, 115°C, 120°C, 125°C, 130°C, 135°C, 140°C, 145°C, or 150°C.

[0081] Furthermore, the material of the electron transport layer may include, but is not limited to, inorganic metal oxide materials such as SnO2, TiO2, ZnO, ZrO2, ZnO, MgO, zinc gallium oxide, zinc indium oxide, fluorine-doped tin oxide, and indium tin oxide, and may also include, but is not limited to, C. 60 Fullerene C 70Organic materials such as methyl (6,6)-phenyl-C61-butyrate (PCBM) and 4-(1',5'-dihydro-1'-methyl-2'H-(5,6)fullerene-C60-In-(1,9-c)pyrrole-2'-yl)benzamine chloride (CPMAC).

[0082] The materials for the electron transport layer may include, but are not limited to, BaSnO3 and TiSnO. x SnZnO x The electron transport layer material can be one or more inorganic salt materials. It can also be a single material selected from the aforementioned inorganic metal oxide materials, organic materials, inorganic silicon materials, and inorganic salt materials. Furthermore, the electron transport layer material can be a combination of multiple materials, for example, it could be C... 60 , Fullerene derivatives (6,6)-phenyl-C61-butyrate methyl ester (PCBM), combinations of C60 and PCBM, combinations of PCBM and ZnO, combinations of ZnO and MgO, combinations of C60, PCBM and ZnO, combinations of PCBM, ZnO and MgO, or combinations of C60, PCBM, ZnO and MgO.

[0083] The electron transport layer can be prepared using processes such as wet coating, sol-gel method, chemical vapor deposition, physical vapor deposition, and plasma deposition. The thickness of the electron transport layer is 3–50 nm. This application does not limit the materials, preparation process, or thickness of the electron transport layer.

[0084] In one specific example, a passivation layer is formed on the side of the perovskite layer away from the hole transport layer before the electron transport layer is formed.

[0085] Specifically, the passivation layer preparation method includes the following steps: mixing the passivation material with isopropanol to obtain a passivation solution, wherein the concentration of the passivation material in the passivation solution is 0.3~1mg / mL, coating the passivation solution onto the surface of the perovskite layer, and annealing at 80℃~120℃ for 5 minutes~30 minutes to obtain the passivation layer.

[0086] This application also provides a solar cell prepared according to the preparation method described above.

[0087] Furthermore, this application also provides a photovoltaic module, including a solar cell prepared by the above-described method or a solar cell as described above.

[0088] Furthermore, this application provides an electrical device whose power supply device includes a solar cell as described above.

[0089] In one specific example, the battery may include an outer packaging. This outer packaging can be used to encapsulate the aforementioned electrode components and electrolyte. In one specific example, the battery's outer packaging can be a rigid shell, such as a hard plastic shell, an aluminum shell, a steel shell, etc. The battery's outer packaging can also be a soft pack, such as a pouch. The soft pack can be made of plastic; further, non-limiting examples of plastics may include one or more of polypropylene, polybutylene terephthalate, and polybutylene succinate.

[0090] In a specific example, the electrical device can be a mobile phone, laptop, smartwatch, electric vehicle, medical device, portable charging station, aerospace equipment, smart home, or energy storage power station. The energy storage power station can be a photovoltaic energy storage power station, a wind power energy storage power station, a hydropower energy storage power station, a thermal power energy storage power station, etc.

[0091] Unless otherwise specified, all raw materials used in the following examples are commercially available products.

[0092] Example 1

[0093] S101, Cleaning the ITO transparent conductive substrate: The ITO transparent conductive substrate is ultrasonically cleaned by immersion in ethanol, detergent, ultrapure water, isopropanol and ethanol in sequence. The cleaned ITO glass substrate is dried with nitrogen gas. The volume of solvent used for ultrasonic cleaning is 500 mL and the ultrasonic cleaning time is 15 minutes each time. The ITO transparent conductive substrate includes a glass substrate and an indium tin oxide transparent conductive layer formed on the surface of the glass substrate.

[0094] S102, Preparation of hole transport layer: MeO-4PACz is mixed with anhydrous ethanol and stirred at room temperature in a glove box under nitrogen atmosphere until completely dissolved to obtain hole transport layer solution. The concentration of MeO-4PACz in the hole transport layer solution is 1 mg / mL.

[0095] The hole transport layer solution was spin-coated onto the transparent conductive layer of an ITO transparent conductive substrate at a spin speed of 3000 rpm for 30 s; then it was placed on a hot plate at 100°C and heated for annealing for 10 min to form the hole transport layer.

[0096] S103, Preparation of crystallization-controlled wet film: The anti-solvent chlorobenzene (CB) was deposited on the hole transport layer by spin coating process to obtain a crystallization-controlled wet film. The spin coating speed was 2000 rpm and the spin coating time was 20 s. The thickness of the crystallization-controlled wet film was 3 μm.

[0097] S104, preparation of perovskite layer:

[0098] The first step is to dissolve the precursor materials PbI2 and FAI in a mixed solvent of DMF / DMSO (volume ratio of 4:1) according to the preset perovskite composition (FAPbI3) to obtain a perovskite precursor solution.

[0099] The second step is to spin-coat the perovskite precursor solution onto a crystallization-controlled wet film to form a perovskite precursor wet film. The spin-coating speed is 3000 rpm and the spin-coating time is 30 s.

[0100] The third step is to place the ITO transparent conductive substrate with the perovskite precursor wet film on a hot stage at 100°C and anneal for 20 minutes to obtain the perovskite layer.

[0101] S105, Preparation of passivation layer: Phenethylamine iodine (PEAI) and isopropanol are mixed and stirred at room temperature in a glove box under nitrogen atmosphere until completely dissolved to obtain a passivation solution with a PEAI concentration of 0.5 mg / mL. The passivation solution is spin-coated onto the surface of the perovskite layer at a spin speed of 3000 rpm for 20 s. Then, it is placed on a hot plate at 100°C and heated for annealing for 5 min to form a passivation layer with a thickness of 3 nm.

[0102] S106, Fabrication of the electron transport layer: An ITO transparent conductive substrate with a passivation layer is transferred to a vacuum deposition apparatus, and a 10nm thick C layer is deposited on the passivation layer. 60 Layer; then, in C 60 A 10 nm thick tin dioxide (SnO2) transport layer was prepared on the layer using atomic layer deposition technology to obtain the electron transport layer.

[0103] S107, Preparation of silver electrode: The ITO transparent conductive substrate with an electron transport layer is transferred to a vacuum coating instrument, and a silver electrode with a thickness of 200 nm is deposited to obtain a perovskite single junction cell.

[0104] Example 2

[0105] This application provides a method for preparing a perovskite single-junction solar cell, which differs from Example 1 in that the antisolvent chlorobenzene (CB) is replaced with chloroform CF, the thickness of the wet film is controlled to be 5 μm by crystallization, and the rest is the same as Example 1.

[0106] Example 3

[0107] This application provides a method for preparing a perovskite single-junction solar cell, which differs from Example 1 in that the antisolvent chlorobenzene (CB) is replaced with ethyl acetate, the thickness of the wet film is controlled to 1 μm by crystallization, and the rest is the same as in Example 1.

[0108] Example 4

[0109] This application provides a method for preparing a perovskite single-junction solar cell, which differs from Example 1 in that the antisolvent chlorobenzene (CB) is replaced with a mixture of chlorobenzene (CB) and passivating agent phenylethylamine iodine (PEAI), and the molar percentage of the antisolvent in the mixture is 99 mol%, while the rest remains the same as in Example 1.

[0110] Example 5

[0111] This application provides a method for fabricating a perovskite single-junction solar cell, comprising:

[0112] S201, Cleaning the ITO transparent conductive substrate: The ITO transparent conductive substrate is ultrasonically cleaned by immersion in ethanol, detergent, ultrapure water, isopropanol and ethanol in sequence. The cleaned ITO glass substrate is dried with nitrogen gas. The volume of solvent used for ultrasonic cleaning is 500 mL and the ultrasonic cleaning time is 15 minutes each time. The ITO transparent conductive substrate includes a glass substrate and an indium tin oxide transparent conductive layer formed on the surface of the glass substrate.

[0113] S202, Preparation of electron transport layer: Prepare an aqueous solution of tin dioxide, in which the mass ratio of tin dioxide to water is 1:5; spin-coat the aqueous solution of tin dioxide onto the transparent conductive layer of an ITO transparent conductive substrate at a spin-coating speed of 3000 rpm for 30 s; then place it on a hot plate at 100°C for annealing for 10 min to form an electron transport layer.

[0114] S203, Preparation of crystallization-controlled wet film: The anti-solvent chlorobenzene (CB) was deposited on the electron transport layer by spin coating to obtain a crystallization-controlled wet film. The spin coating speed was 2000 rpm and the spin coating time was 20 s. The thickness of the crystallization-controlled wet film was 3 μm.

[0115] S204, for preparing the perovskite layer:

[0116] The first step is to dissolve the precursor materials PbI2 and FAI in a mixed solvent of DMF / DMSO (volume ratio of 4:1) according to the preset perovskite composition (FAPbI3) to obtain a perovskite precursor solution.

[0117] The second step is to spin-coat the perovskite precursor solution onto a crystallization-controlled wet film to form a perovskite precursor wet film. The spin-coating speed is 3000 rpm and the spin-coating time is 30 s.

[0118] The third step is to place the ITO transparent conductive substrate with the perovskite precursor wet film on a hot stage at 100°C and anneal for 20 minutes to obtain the perovskite layer.

[0119] S205, Preparation of passivation layer: Phenethylamine iodine (PEAI) and isopropanol are mixed and stirred at room temperature in a glove box under nitrogen atmosphere until completely dissolved to obtain a passivation solution with a PEAI concentration of 0.5 mg / mL. The passivation solution is spin-coated onto the surface of a perovskite film at a spin speed of 3000 rpm for 20 s. Then, it is placed on a hot plate at 100°C and heated for annealing for 5 min to form a passivation layer with a thickness of 3 nm.

[0120] S206, Preparation of hole transport layer: PTAA (poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)) and chlorobenzene (CB) are mixed and stirred at room temperature in a glove box under nitrogen atmosphere until completely dissolved to obtain hole transport layer solution. The concentration of PTAA in the hole transport layer solution is 10 mg / mL.

[0121] The hole transport layer solution was spin-coated onto the perovskite layer at a speed of 3000 rpm for 30 seconds; then it was heated and annealed on a hot plate at 100°C for 10 minutes to form the hole transport layer.

[0122] S207, Preparation of silver electrode: The ITO transparent conductive substrate with hole transport layer is transferred to a vacuum coating instrument, and a silver electrode with a thickness of 200 nm is deposited to obtain a perovskite single junction cell.

[0123] Comparative Example 1

[0124] This comparative example provides a method for preparing a perovskite single-junction solar cell. The difference from Example 1 is that the operation of preparing a crystallization control wet film on the side of the hole transport layer away from the ITO transparent conductive substrate is omitted. Instead, a perovskite layer is prepared on the side of the hole transport layer away from the ITO transparent conductive substrate. When spin-coating the perovskite precursor solution onto the hole transport layer, the antisolvent chlorobenzene (CB) is added dropwise. The rest is the same as in Example 1.

[0125] Comparative Example 2

[0126] This comparative example provides a method for preparing a perovskite single-junction solar cell. The difference from Example 1 is that the thickness of the wet film controlled by crystallization is 10 nm, while the rest remains the same as in Example 1.

[0127] Comparative Example 3

[0128] This comparative example provides a method for preparing a perovskite single-junction solar cell. The difference from Example 5 is that the operation of preparing a crystallization control wet film on the side of the electron transport layer away from the ITO transparent conductive substrate is omitted. Instead, a perovskite layer is prepared on the side of the electron transport layer away from the ITO transparent conductive substrate. When spin-coating the perovskite precursor solution onto the electron transport layer, the antisolvent chlorobenzene (CB) is added dropwise. The rest is the same as in Example 5.

[0129] Under standard test conditions (AM1.5, 1000W / m) 2 The efficiency of the perovskite single-junction cells obtained in the above embodiments and comparative examples was tested, and the test results are shown in Table 1 below.

[0130] Table 1

[0131]

[0132] According to the data in Table 1 above, the inverted single-junction perovskite solar cells of Examples 1 to 4 have higher cell efficiencies than the inverted single-junction perovskite solar cells of Comparative Examples 1 and 2. The standard single-junction perovskite solar cell of Example 5 has higher cell efficiency than the standard single-junction perovskite solar cell of Comparative Example 3. This indicates that the efficiency of the single-junction perovskite solar cells prepared using the technical solution of this application is significantly improved compared to conventional single-junction perovskite solar cells. Among them, Example 4 has a higher cell efficiency than Examples 1 to 3, indicating that using a mixture of antisolvent and passivator to prepare the crystallization-controlled wet film can better improve cell efficiency compared to using an antisolvent to prepare the crystallization-controlled wet film.

[0133] According to the data from Example 1 and Comparative Example 2, if the thickness of the crystallization control wet film is too large, it will significantly reduce the short-circuit current density and fill factor of the battery, which may hinder the effective transport of charge carriers, increase the interface resistance, and even introduce defects, thus having a negative impact on battery performance and leading to a decrease in battery efficiency.

[0134] Example 6

[0135] S301, Providing a crystalline silicon base cell: The crystalline silicon base cell includes an N-type monocrystalline silicon substrate, a P-type amorphous silicon thin film and a silver electrode deposited on the front side of the N-type monocrystalline silicon substrate, an N-type amorphous silicon thin film deposited on the back side of the N-type monocrystalline silicon substrate, and a transparent conductive layer deposited on the N-type amorphous silicon thin film.

[0136] Ethanol was spin-coated onto the transparent conductive layer on the back of the bottom cell at 3000 rpm for 30 seconds in a spin coater, and this process was repeated twice. Then, the cells were heat-treated at 200°C for 10 minutes to complete the cleaning process.

[0137] S302, Fabrication of the hole transport layer:

[0138] The first step involves placing the crystalline silicon base cell into a NiOx sputtering mask, then placing the mask into a magnetron sputtering apparatus and evacuating it to a vacuum level of 7 × 10⁻⁶. -4 Below Pa, select the radio frequency magnetron sputtering mode, adjust the power to 200W, set the argon flow rate to 30sccm, and sputter for 5min to form a NiOx layer on the transparent conductive layer of the crystalline silicon bottom cell.

[0139] The second step involves mixing the SAM material 2PACz with anhydrous ethanol and stirring at room temperature in a glove box under nitrogen atmosphere until completely dissolved to obtain a SAM solution. The concentration of 2PACz in the SAM solution is 1 mg / mL.

[0140] The SAM solution was spin-coated onto the NiOx layer at a speed of 3000 rpm for 30 s. Then, it was placed on a hot plate at 100°C and heated for annealing for 10 min to form the SAM layer. The SAM layer and the NiOx layer constitute the hole transport layer.

[0141] S303, Preparation of crystallization-controlled wet film: The anti-solvent chlorobenzene (CB) was deposited on the hole transport layer by spin coating process to obtain crystallization-controlled wet film. The spin coating speed was 2500 rpm and the spin coating time was 15 s. The thickness of the crystallization-controlled wet film was 5 μm.

[0142] S304, for preparing the perovskite layer:

[0143] The first step is to follow the pre-defined perovskite composition (Cs). 0.05 FA 0.8 MA 0.15 Pb(I 0.7 Br 0.3 )3) The precursor materials PbI2, CsI, PbBr2, FAI and MABr were dissolved in a mixed solvent of DMF / DMSO (volume ratio of 4:1) to obtain a perovskite precursor solution.

[0144] The second step is to spin-coat the perovskite precursor solution onto a crystallization-controlled wet film to form a perovskite precursor wet film. The spin-coating speed is 3000 rpm and the spin-coating time is 30 s.

[0145] The third step is to place the crystalline silicon bottom cell with the perovskite precursor wet film on a hot stage at 100°C and anneal for 20 minutes to obtain the perovskite layer.

[0146] S305, Preparation of passivation layer: The passivation material propane-1,3-diammonium iodide (PDAI) and isopropanol are mixed and stirred at room temperature in a glove box under nitrogen atmosphere until completely dissolved to obtain a passivation solution. The concentration of PDAI in the passivation solution is 0.5 mg / mL. The passivation solution is spin-coated onto the surface of the perovskite layer at a spin-coating speed of 3000 rpm for 20 s. Then, it is placed on a hot stage at 100℃ and heated for annealing for 5 min to form a passivation layer with a thickness of 3 nm.

[0147] S306, Preparation of electron transport layer: The crystalline silicon bottom cell with passivation layer is transferred to a vacuum coating instrument, and a C60 layer with a thickness of 10 nm is deposited on the passivation layer; then, a tin dioxide (SnO2) transport layer with a thickness of 10 nm is prepared on the C60 layer using atomic layer deposition process to obtain the electron transport layer.

[0148] S307, Preparation of transparent conductive layer: At room temperature, indium zinc oxide (IZO) thin film is deposited on the surface of electron transport layer by radio frequency magnetron sputtering, with sputtering power controlled at 300W, chamber pressure at 0.6Pa, argon flow rate at 20sccm, 5% argon-oxygen mixed flow rate at 5sccm, and sputtering time at 210s.

[0149] S308, Preparation of silver electrode: The crystalline silicon bottom cell with a transparent conductive layer is transferred to a vacuum coating instrument, and a silver electrode with a thickness of 200 nm is deposited to obtain a perovskite / crystalline silicon tandem cell.

[0150] Example 7

[0151] This application provides a method for preparing a perovskite / crystalline silicon tandem solar cell. The difference from Example 6 is that the antisolvent chlorobenzene (CB) is replaced with diethyl ether, and the thickness of the wet film is controlled to be 5 μm by crystallization. The rest is the same as in Example 6.

[0152] Example 8

[0153] This application provides a method for preparing a perovskite / crystalline silicon tandem solar cell, which differs from Example 6 in that: the antisolvent chlorobenzene (CB) is replaced with ethyl acetate, and the thickness of the wet film is controlled to 1 μm by crystallization, while the rest remains the same as Example 6.

[0154] Example 9

[0155] This application provides a method for preparing a perovskite / crystalline silicon tandem solar cell, which differs from Example 6 in that the antisolvent chlorobenzene (CB) is replaced with a mixture of chlorobenzene (CB) and passivating agent phenylethylamine iodine (PEAI), wherein the molar percentage of antisolvent chlorobenzene (CB) in the mixture is 99 mol%, and the rest remains the same as in Example 6.

[0156] Comparative Example 4

[0157] This application provides a comparative example of a method for preparing a perovskite / crystalline silicon tandem solar cell. The difference from Example 6 is that the operation of preparing a crystallization control wet film on the side of the hole transport layer away from the crystalline silicon bottom cell is omitted. Instead, a perovskite layer is prepared on the side of the hole transport layer away from the crystalline silicon bottom cell. When spin-coating the perovskite precursor solution onto the hole transport layer, the antisolvent chlorobenzene (CB) is added dropwise. The rest is the same as in Example 6.

[0158] Comparative Example 5

[0159] This application provides a comparative method for preparing a perovskite / crystalline silicon tandem solar cell, which differs from Example 6 in that the thickness of the wet film controlled by crystallization is 10 nm, while the rest remains the same as in Example 6.

[0160] Under standard test conditions (AM1.5, 1000W / m) 2 The efficiency of the perovskite / crystalline silicon tandem solar cells obtained in the above embodiments and comparative examples was tested, and the test results are shown in Table 2 below.

[0161] Table 2

[0162]

[0163] According to the data in Table 2 above, Examples 6 to 9 have higher battery efficiency than Comparative Examples 4 and 5. Among them, Example 9 has a higher battery efficiency than Examples 6 to 8, indicating that using a mixture of antisolvent and passivator to prepare the crystallization control wet film can better improve battery efficiency compared to using an antisolvent to prepare the crystallization control wet film.

[0164] According to the data from Example 6 and Comparative Example 5, if the thickness of the crystallization control wet film is too large, it will significantly reduce the short-circuit current density and fill factor, causing the open-circuit voltage to decay synchronously. This indicates that once the control layer exceeds the optimal thickness, it itself becomes an obstacle to carrier transport and introduces more interfacial recombination centers, thereby completely offsetting or even reversing the optimization effect on the crystallization quality of perovskite.

[0165] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0166] The above embodiments merely illustrate several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A method for producing a solar cell, characterized by, The method comprises the following steps: providing a substrate, the substrate being an electrically conductive substrate or a battery substrate; preparing a first carrier transport layer on the substrate; forming a crystallization control wet film and a perovskite precursor wet film on a side surface of the first carrier transport layer away from the substrate in sequence, annealing, and preparing a perovskite layer; wherein the material of the crystallization control wet film comprises an anti-solvent, the material of the perovskite precursor wet film comprises a perovskite precursor solution, and the boiling point of the anti-solvent is less than or equal to the boiling point of the organic solvent in the perovskite precursor solution; forming a second carrier transport layer and an electrode on a side of the perovskite layer away from the first carrier transport layer in sequence, wherein one of the first carrier transport layer and the second carrier transport layer is a hole transport layer, and the other is an electron transport layer.

2. The method of producing a solar cell according to claim 1, wherein One or both of the following conditions are met: (1) the boiling point of the anti-solvent at 101 kPa is 30°C to 190°C; (2) the boiling point of the organic solvent in the perovskite precursor solution at 101 kPa is 150°C to 190°C.

3. The method for producing a solar cell according to claim 1 or 2, wherein The material of the crystallization control wet film further comprises a passivation agent, and the molar ratio of the passivation agent to the anti-solvent is (0.5-2):(98-100).

4. The method of producing a solar cell according to claim 3, wherein The passivation agent comprises one or more of methyl amine iodide, formamidine hydroiodide, phenethyl amine iodide, butyl amine iodide, hexyl hydrobromide, trimethyl (2-hydroxyethyl) ammonium iodide, and 1,3-propanediamine dihydroiodide.

5. The method of producing a solar cell according to any one of claims 1 to 2 and 4, wherein The crystallization control wet film meets one or more of the following conditions: (1) the method for forming the crystallization control wet film comprises slot coating, blade coating, spin coating, spray pyrolysis, or inkjet printing process; (2) the thickness of the crystallization control wet film is 0.5 µm to 5 µm; (3) the anti-solvent comprises one or more of chlorobenzene, chloroform, ethyl acetate, 1-butanol, petroleum ether, ethanol, isopropyl alcohol, anisole, o-dichlorobenzene, toluene, bromobenzene, and iodobenzene.

6. The method of producing a solar cell according to any one of claims 1 to 2 and 4, wherein The conditions for forming the perovskite precursor wet film meet one or more of the following conditions: (1) the method for forming the perovskite precursor wet film comprises slot coating, blade coating, or spin coating; (2) the thickness of the perovskite precursor wet film is 100 µm to 300 µm; (3) the perovskite precursor solution further comprises a perovskite material, the perovskite material comprises a first precursor compound and a second precursor compound, the chemical formula of the first precursor compound is AX, and the chemical formula of the second precursor compound is BX2; wherein the A ion is selected from one or more of formamidinium ion, cesium ion, methylamine ion, dimethylamine ion, guanidinium ion, potassium ion, and rubidium ion, the B ion is one or more of lead ion and tin ion, and each X ion is independently selected from one or more of bromide ion, iodide ion, chloride ion, and thiocyanate ion, and the concentration of each of the A ion and the B ion in the perovskite precursor solution is 1 mol / L to 2 mol / L. (4) the organic solvent comprises one or more of N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, dimethyl sulfoxide, 2-methoxyethanol, and N,N'-dimethylaceto urea.

7. The method of producing a solar cell according to any one of claims 1 to 2 and 4, wherein The annealing satisfies one or both of the following conditions: (1) the annealing time is 5 min to 30 min; (2) the annealing temperature is 90 °C to 150 °C.

8. The method of producing a solar cell according to any one of claims 1 to 2 and 4, wherein The second carrier transport layer is an electron transport layer, and before the second carrier transport layer is formed, a passivation layer is further formed on a side of the perovskite layer away from the second carrier transport layer.

9. A solar cell, characterized by, Prepared according to the preparation method as claimed in any one of claims 1 to 8.

10. A photovoltaic module, characterized by, A solar cell comprising the solar cell as claimed in claim 9.

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