Formation method of semiconductor structure and semiconductor structure
By forming first and second ion implantation regions on the substrate and forming contact holes through different epitaxial layers along the stacking direction to connect conductive interconnect layers, the problem of optimizing the sidewalls and bottom contact interfaces of deep trench contact holes is solved, achieving low contact resistance conductivity.
CN121548291APending Publication Date: 2026-02-17SUZHOU WATECH ELECTRONICS CO LTD
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Patent Information
- Application Number
- CN202511735230.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-24
- Publication Date
- 2026-02-17
AI Technical Summary
Technical Problem
Existing technologies cannot simultaneously optimize the contact interface on both the sidewalls and bottom of deep groove contact holes, resulting in high contact resistance.
Method used
By forming first and second ion implantation regions on the substrate and forming contact holes through them along the stacking direction of different epitaxial layers to expose the ion implantation regions, and connecting the two with a conductive interconnect layer, electrical conduction between the substrate and the epitaxial layers is achieved.
Benefits of technology
Precise optimization of doping was achieved on the sidewalls and bottom of the deep trench contact hole, reducing contact resistance and improving overall conductivity.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention provides a semiconductor structure forming method and a semiconductor structure. The forming method comprises the following steps: forming a substrate, and forming a first ion implantation region on the surface of the substrate; and forming a first epitaxial layer on the substrate, and forming a second ion implantation region on the surface of the first epitaxial layer. A second epitaxial layer is formed on the first epitaxial layer. Forming a second contact hole, enabling the second contact hole to penetrate through the second epitaxial layer along the stacking direction of the second epitaxial layer so as to expose the second ion implantation region, and forming a first contact hole, enabling the first contact hole to penetrate through the second epitaxial layer and the first epitaxial layer along the stacking direction of the second epitaxial layer so as to expose the first ion implantation region. A conductive interconnection layer is formed, and the conductive interconnection layer is located in the first contact hole and the second contact hole and connected with the first ion implantation region and the second ion implantation region, so that the substrate and the first epitaxial layer are electrically conducted through the conductive interconnection layer. The problem that the contact resistance is high when the deep groove contact hole is optimized can be solved.
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