Method for preparing multi-material substrate

Abstract

A method for preparing a substrate (100) comprising a surface layer of a first material and / or a second material obtained from the first material, the surface layer being disposed on a support layer (104) of a third material, comprising: performing ion implantation in a first substrate comprising the first material; attaching the first substrate to the temporary substrate such that a first portion (114) of the first substrate abuts against the temporary substrate; separating the first substrate so as to retain the surface layer on the temporary substrate; cutting the obtained assembly into a plurality of parts; attaching these portions to a support layer; the temporary substrate present in each of the portions is removed.

Description

Technical Field

[0001] The field of this invention lies in the manufacture of multi-material substrates, particularly in the manufacture of substrates comprising a surface layer of a first material disposed on a support layer of a third material and / or a second material obtained from the first material. This invention is particularly applicable to substrates intended for the fabrication of optoelectronic and / or photonic circuits, but also applicable to substrates for the fabrication of microelectronic circuits or photovoltaic devices. Background Technology

[0002] Some expensive materials, such as III-V group materials based on GaAs and / or InP, are used in microelectronics, photonics, or photovoltaics due to their unique electrical and / or optical properties, but are currently only available in the form of small-sized substrates, such as those with diameters of 100 or 150 millimeters. The size limitation of these substrates is mainly due to the difficulties encountered during the growth of these crystalline materials. Furthermore, the cost of fabricating substrates incorporating such materials is very high.

[0003] Although the costs associated with using these materials are high, technologies utilizing these specific materials and compatible with small-sized substrates allow for direct integration of components or circuits onto these substrates. On the other hand, small-sized commercial InP substrates are not suitable for integration requiring larger diameter substrates, such as co-integrating InP chips with silicon components using substrates with diameters of 200 mm or 300 mm.

[0004] To achieve InP co-integration on silicon, the first solution is to cut a small-diameter InP substrate (a barrier layer containing integrated crystalline material buried beneath the InP epitaxial layer at the desired chip thickness) into multiple segments, and then mount the InP segments onto a larger-diameter silicon substrate at the desired locations. The mounted InP segments are then thinned to the required thickness (through grinding, etching (chemical or plasma), CMP (chemical mechanical planarization or thinning), etc.), i.e., thinned down to the barrier layer. This barrier layer allows for chip removal. It is then removed by selective etching, leaving only the epitaxial InP film.

[0005] The main drawback of the first solution is that the InP removed through thinning (which can be hundreds of micrometers thick) is lost. Therefore, considering the significant loss of InP during the thinning process, the first solution always faces cost issues. Furthermore, the first solution requires the presence of a crystal barrier layer for the thinning of the InP portion.

[0006] A second solution for achieving co-integration of InP chips on silicon involves dicing a small-diameter InP substrate into multiple segments and then mounting the InP segments onto a first silicon substrate. The InP segments attached to the first silicon substrate are then used as donors and mounted onto a second silicon substrate using a Smart-cut™ method, with the InP films arranged adjacent to each other as separate, discontinuous segments. This second solution can fabricate InPOSi substrates with diameters of 200 mm or 300 mm (with an oxide layer present between the InP segments and the second silicon substrate). The InP segments attached to the first silicon substrate can be reused multiple times to mount InP films as separate segments onto several other second silicon substrates.

[0007] However, the second solution has many integration problems, especially:

[0008] - The density of the InP portions attached to the first silicon substrate and the position of these portions on the first substrate are immutable and must correspond to the required density and position for all prepared substrates.

[0009] - Partial transfer of InP at the edge of the board because the InP portions attached to the first substrate are separated from each other or discontinuous;

[0010] - It is difficult to perform CMP on the InP film mounted on the second substrate and the remaining portion of the InP portion attached to the first substrate because these CMP operations are performed on mutually separated InP portions.

[0011] Furthermore, when attaching the InP portion to the first substrate and determining its diameter, the dimensions of the final substrate (corresponding to the second silicon substrate) and its InP coverage must be taken into account. This results in a lower InP portion density on both the first and second silicon substrates, thus exacerbating the aforementioned problem.

[0012] The aforementioned problems also exist in materials other than InP, especially for any material with high substrate production costs and / or limited substrate size. Summary of the Invention

[0013] The present invention aims to overcome all or part of the disadvantages of the prior art, and in particular proposes a solution for preparing a substrate with a large size, the substrate comprising a first material and / or a surface layer of a second material obtained from the first material, the surface layer being disposed on a support layer of a third material, minimizing the use of the first material, and eliminating the need for a barrier layer of crystalline material.

[0014] Therefore, the present invention proposes a method for preparing a substrate, the substrate comprising a surface layer of a first material and / or a second material obtained from the first material, the surface layer being disposed on a support layer of a third material, the method comprising at least the following steps:

[0015] - Ion implantation is performed in a first substrate comprising a first material to form a separation interface or plane between a first portion of the first substrate corresponding to a surface layer and a second portion of the first substrate;

[0016] - Attach the first substrate to the temporary substrate such that the surface layer of the first substrate is disposed between the temporary substrate and the second portion of the first substrate;

[0017] - At the separation interface, the second portion of the first substrate is separated relative to the assembly comprising at least the surface layer of the first substrate and the temporary substrate;

[0018] - The component is cut into several parts such that each part includes at least a portion of the surface layer of the first substrate and / or a portion of the layer of the second material previously formed from the surface layer of the first substrate, as well as a portion of the temporary substrate;

[0019] - Attach each portion of the portion to the support layer such that for each portion of the portion, a portion of the surface layer of the first substrate and / or a layer of the second material are disposed between the support layer and the portion of the temporary substrate;

[0020] - Remove a portion of the temporary substrate of each portion of the portion, a portion of the surface layer of the first substrate and / or a layer of the second material are left on the support layer to form a surface layer of the first material and / or the second material.

[0021] Therefore, the parts are independent of each other, that is, separated. During the cutting process, the temporary substrate is completely cut through, so that each of the resulting parts includes a portion of the temporary substrate.

[0022] The first advantage of this method is that it does not require the removal of substantial thickness of the first material and / or the second material, as only the surface layer of the first substrate needs to be mounted on a temporary substrate.

[0023] Another advantage of this method is that the cutting is not performed directly on the first substrate before being mounted onto the second substrate, but rather after the surface layer of the first substrate is mounted onto a temporary substrate. Therefore, the first substrate can be reused to prepare multiple substrates, allowing the density of the portions of the first and / or second material on the second substrate and / or the position of the portions on the second substrate to vary depending on the substrate. Furthermore, this avoids partial transfer of the first and / or second material at the edges of the portions.

[0024] This approach can eliminate several technical barriers inherent in the use of pseudo-donors, enabling greater diversity in the fabrication of the final substrate (geometry, size, distribution, chip density, final substrate type, etc.), while providing new possibilities (such as III-V group integration on intermediate substrates, etc.).

[0025] Advantageously, the first material can correspond to at least one of the following materials: InP, GaAs, GaN, LTO, LNO, SiC, and diamond.

[0026] Furthermore, in an advantageous configuration, the diameter of the first substrate (or more generally, the size of the first substrate on its main plane) can be equal to the diameter of the temporary substrate and less than or equal to the diameter of the final substrate (i.e., the diameter corresponding to the support layer).

[0027] In an exemplary embodiment, the method can be implemented as follows:

[0028] - The first substrate has a diameter of less than or equal to 150 mm, and

[0029] - The support layer has a diameter greater than or equal to 200 mm, and

[0030] - The temporary substrate has a diameter of 150 mm or less.

[0031] The method may also include chemically and mechanically planarizing the surface of the second portion of the first substrate obtained from the separation interface and the surface layer of the first substrate between the separation step and the cutting step. In this case, the planarization is performed on the solid surface rather than in several parts, which facilitates implementation.

[0032] The method may also include:

[0033] - Before attaching the first substrate to the temporary substrate, a first adhesive layer is formed on the surface layer of the first substrate. Attaching the first substrate to the temporary substrate includes bonding (e.g., direct bonding) the first adhesive layer against a second adhesive layer formed on the temporary substrate, and / or

[0034] - Before attaching each part of the portion to the support layer, a third adhesive layer is formed on the surface layer of the first substrate or a layer of the second material. Attaching each part of the portion to the support layer includes bonding (e.g., directly bonding) the third adhesive layer against the support layer to form a fourth adhesive layer.

[0035] Advantageously, the adhesive layer may comprise an amorphous material, such as an oxide (e.g., silicon dioxide) or, for example, amorphous silicon. In this case, the adhesion performed may correspond to direct bonding between these adhesive layers.

[0036] In a specific embodiment, the method may further include generating a layer of second material on the surface layer of the first substrate between the separation and cutting steps, and wherein each portion of the portions is attached to a support layer such that for each portion, a portion of the layer of second material is disposed between the support layer and a portion of the surface layer of the first substrate.

[0037] In this case, the method may further include: after removing a portion of the temporary substrate in each of the portions, removing a portion of the surface layer of the first substrate retained on the support layer.

[0038] In another embodiment, the method may further include: generating a layer of second material on a surface layer of the first substrate before attaching the first substrate to the temporary substrate, and wherein attaching the first substrate to the temporary substrate is performed such that the layer of second material is disposed between the surface layer of the first substrate and the temporary substrate.

[0039] The method may further include: generating a layer of second material on a surface layer of the first substrate before attaching the first substrate to the temporary substrate; and may further include: removing the surface layer from the first substrate between separation and cutting steps.

[0040] This method is advantageous for preparing large-size substrates, on which InP chips or any other materials suitable for implementing the method (e.g., any materials that cannot be obtained directly in the form of large-size substrates) can be placed.

[0041] This method can be implemented to prepare an InPOX-type substrate, comprising an InP portion disposed on a (e.g., silicon-based) support layer, and an adhesive layer disposed between the support layer and the InP portion. The adhesive layer may comprise an amorphous material, such as an oxide (e.g., silicon dioxide) or amorphous silicon.

[0042] Throughout the text, the use of the term "on" is unrelated to the spatial orientation of the element to which the term refers. For example, in the feature "on the surface of the first substrate," this surface of the first substrate is not necessarily upward, but can correspond to a surface in any orientation. Furthermore, the arrangement of the first element on the second element should be understood to either correspond to an arrangement in which the first element directly abuts against the second element, where there are no intermediate elements between the first and second elements, or it may correspond to an arrangement in which one or more intermediate elements are arranged between the first and second elements. Attached Figure Description

[0043] Referring to the accompanying drawings, other advantages, objects, and features of the invention will become apparent from the following non-limiting description of at least one particular embodiment of the apparatus and method according to the invention, wherein:

[0044] Figures 1 to 7 The steps of a method for preparing a substrate according to a first embodiment of the present invention are shown, wherein the substrate includes a surface layer of a first material and / or a second material obtained from the first material, the surface layer being disposed on a support layer of a third material;

[0045] Figures 8 to 16 The steps of a method for preparing a substrate according to a second embodiment of the present invention are shown, wherein the substrate includes a surface layer of a first material and / or a second material obtained from the first material, the surface layer being disposed on a support layer of a third material;

[0046] Figures 17 to 23 The steps of a method for preparing a substrate according to a third embodiment of the present invention are shown, wherein the substrate includes a surface layer of a first material and / or a second material obtained from the first material, the surface layer being disposed on a support layer of a third material;

[0047] Figures 24 to 31 The steps of a method for preparing a substrate according to a fourth embodiment of the present invention are shown, wherein the substrate includes a surface layer of a first material and / or a second material obtained from the first material, the surface layer being disposed on a support layer of a third material.

[0048] In the different figures described below, the same, similar or equivalent parts are given the same reference numerals to facilitate switching from one figure to another.

[0049] The various parts shown in the figure are not necessarily represented to a uniform scale, in order to facilitate reading the accompanying drawings.

[0050] It should be understood that different possibilities (variations and implementations) are not mutually exclusive, but can be combined together. Detailed Implementation

[0051] The following is for reference. Figures 1 to 7 A first embodiment of a method for preparing a substrate 100 is described, the substrate 100 comprising a surface layer of a first material and / or a second material obtained from the first material, the surface layer being disposed on a support layer, or disposed on a substrate 104 of a third material.

[0052] This method employs a first substrate 106, which includes a first material. For example, the first material corresponds to a material that is costly and / or only available as a small-diameter substrate, such as III-V group materials based on GaAs, InP, GaN, etc., or other types of materials, such as LTO (lithium tantalate) and / or LNO (LaNiO3) or SiC (silicon carbide). In the described exemplary embodiment, the first material of the first substrate 106 (e.g.) Figure 1 (As shown) corresponds to InP.

[0053] For example, the first substrate 106 has a diameter of less than or equal to 150 mm. In the described exemplary embodiment, the first substrate 106 has a diameter of 100 mm or more.

[0054] The first substrate 106 is intended to be attached to a temporary substrate 108 having the same diameter as the first substrate 106. In the described exemplary embodiment, this attachment is achieved through direct bonding between adhesive layers previously formed on the first substrate 106 and the temporary substrate 108. Thus, a first adhesive layer 110 (comprising, for example, an amorphous material such as oxides, particularly SiO2 and amorphous silicon) is deposited on the first substrate 106, on one side of the surface of the first substrate 106 intended to form a portion of the surface layer of the substrate 100 to be obtained at the end of the method.

[0055] Ion implantation is performed in the first substrate 106 via the first adhesive layer 110. The ions implanted into the first substrate 106 correspond to, for example, H+ ions. This ion implantation forms a separation interface or plane 112 in the first substrate 106 between a first portion 114 and a second portion 116 of the first substrate 106 (see [link]). Figure 2 A first portion 114 of the first substrate 106 forms a surface layer of the first substrate 106, and a first adhesive layer 110 is disposed on the surface layer.

[0056] Before attaching the first substrate 106 to the temporary substrate 108, a second adhesive layer 118 (including, for example, an amorphous material, such as an oxide, particularly SiO2 or amorphous silicon) is deposited on the temporary substrate 108.

[0057] Then the first substrate 106 is attached to the temporary substrate 108, such that the surface layer of the first substrate 106, i.e., the first portion 114 of the first substrate 106, is disposed between the temporary substrate 108 and the second portion 116 of the first substrate 106 (see...). Figure 3 In the described exemplary embodiment, this attachment corresponds to a direct oxide-oxide bond between the first adhesive layer 110 and the second adhesive layer 118.

[0058] For example, the temporary substrate 108 has dimensions similar to or close to those of the first substrate 106. In the described embodiment, the temporary substrate 108 has a diameter less than or equal to 150 mm, here equal to 100 mm.

[0059] In the described exemplary embodiment, the temporary substrate 108 comprises silicon. Alternatively, the temporary substrate 108 may comprise any other material, such as a CTE similar to that of the first substrate 106 and / or an inexpensive material, such as glass.

[0060] In addition to the exemplary embodiments described herein, the attachment between the first substrate 106 and the temporary substrate 108 can also be achieved by employing an adhesive technique different from direct oxide-oxide bonding. In this case, the first adhesive layer 110 and the second adhesive layer 118 will not be formed on the first substrate 106 and the temporary substrate 108.

[0061] Then, at the separation interface 112, the second portion 116 of the first substrate 106 is separated from the assembly comprising at least the first portion 114 of the first substrate 106 and the temporary substrate 108. Heat treatment is then performed during this separation process. The resulting assembly is as follows: Figure 4 As shown, and in the described exemplary embodiment, it also includes an adhesive interface formed by a first adhesive layer 110 and a second adhesive layer 118. The obtained substrate is, for example, an InPOSi (or InP on silicon) type.

[0062] Then, the second portion 116 of the first substrate 106 is recycled for use in subsequent preparations such as Figure 4 The new components shown are reusable. For example, the surface of the second portion 116 of the first substrate 106, separated from the first portion 114, can undergo polishing and cleaning steps so that the second portion 116 of the first substrate 106 can be used to prepare, for example... Figure 4 The new component is shown. This polishing and cleaning step was also performed on the first portion 114 of the first substrate 106.

[0063] At this stage of the method, in a specific configuration, the surface layer formed by the first portion 114 of the first substrate 106 mounted on the temporary substrate 108 can be used to implement integrated steps (heat treatment, epitaxy, cleaning, CMP, etc.) that are conventionally performed in the field of III-V materials.

[0064] The obtained assembly, which includes at least a first portion 114 of the first substrate 106 and a temporary substrate 108, is then cut into several portions or chips 120, such that each portion 120 includes at least a portion of the surface layer of the first substrate 106 (i.e., the first portion 114 of the first substrate 106) and a portion of the temporary substrate 108. In the described exemplary embodiment, each portion 120 also has a portion of an adhesive interface formed by a first adhesive layer 110 and a second adhesive layer 118. Figure 5The diagram shows four portions 120. Each portion 120 corresponds to a chip with a rectangular cross-section, the plane of which is parallel to the surface of the first portion 114 of the first substrate 106, against which the first adhesive layer 110 abuts. Other shapes of the portions 120 are also contemplated. Furthermore, the dimensions of each portion 120 depend on the intended application of the substrate 100, specifically to allow for subsequent processing of the portions 120 during "pick-and-place" type steps (e.g., between a few millimeters and a few centimeters).

[0065] Figure 5 It is also shown that the temporary substrate 108 is cut into several parts, that is, during the cutting process, it is cut entirely along its thickness.

[0066] The portions 120 are then attached to the support layer 104 such that for each portion 120, a portion of the first portion 114 of the first substrate 106 is disposed between the support layer 104 and a portion of the temporary substrate 108. In the described exemplary embodiment, this attachment is achieved between adhesive layers, such as an oxide layer for implementing direct adhesion, which is previously formed on the first portion 114 of the first substrate 106 and the support layer 104. Thus, prior to this attachment, a third adhesive layer 122 (e.g., corresponding to an amorphous material layer, such as an oxide, like SiO2) is deposited on the first portion 114 of the first substrate 106, and a fourth adhesive layer 124 (e.g., corresponding to an amorphous material layer, such as an oxide, like SiO2) is deposited on the support layer 104. The location of the portions 120 on the support layer 104 and the density of the portions 120 mounted on the support layer 104 depend on the target application of the substrate 100 obtained at the end of the method.

[0067] In the exemplary embodiments described, the support layer 104 corresponds to a substrate with a diameter greater than that of the first substrate 106, for example, greater than or equal to 200 mm. The support layer 104 comprises, for example, silicon. Alternatively, depending on the target application of the substrate 100 obtained at the end of the method, the support layer 104 may comprise one or more materials other than silicon.

[0068] The bond between part 120 and the support layer 104 can be consolidated and annealed.

[0069] The substrate 100 is completed by removing portions of the temporary substrate 108 in each of the portions 120. In the described exemplary embodiment, portions of the adhesive interfaces formed by the first adhesive layer 110 and the second adhesive layer 118 and present in each of the portions 120 are also removed. This material removal can be performed, for example, by grinding and / or CMP and / or liquid phase or plasma chemical etching steps. The resulting substrate 100 is as follows: Figure 7As shown. In the substrate 100, a portion of the surface layer of the first substrate 106 (formed by the first portion 114 of the first substrate 106) exists on the support layer 104 (and on the adhesive interface formed by the third adhesive layer 122 and the fourth adhesive layer 124), forming the surface layer of the first material of the substrate 100.

[0070] The following is for reference. Figures 8 to 16 A second embodiment of a method for preparing a substrate 100 is described, the substrate 100 comprising a surface layer of a first material and / or a second material obtained from the first material, the surface layer being disposed on a support layer 104 of a third material.

[0071] First, implement the previous reference. Figures 1 to 4 The steps described, these steps are as follows Figures 8 to 11 As shown. The first substrate 106, adhesive layers 110, 118, and temporary substrate 108 used in the second embodiment are similar to those used in the first embodiment. Following these steps, the resulting assembly includes a first portion 114 of the first substrate 106, forms a surface layer disposed on the temporary substrate 108, and is attached to the temporary substrate 108 via an adhesive interface formed by the first adhesive layer 110 and the second adhesive layer 118.

[0072] Then, a layer 126 of at least one second material is formed on the first portion 114 of the first substrate 106 (see...). Figure 12 For example, layer 126 is produced by epitaxial growth using a first portion 114 of a first substrate 106 as a growth substrate. The second material corresponds to a material whose crystal structure matches the lattice of the first material of the first portion 114 of the first substrate 106. When the first material corresponds to InP, the second material corresponds to a group III-V material, such as InGaP or InGaAs. Layer 126 can also correspond to a stack of several different materials to form devices such as diodes, sensors, etc.

[0073] The obtained component is then cut into several portions 120, such that each portion 120 includes at least a portion of the surface layer of the first substrate 106 (i.e., the first portion 114 of the first substrate 106) and a portion of the temporary substrate 108. In the described exemplary embodiment, each portion 120 also has a portion of the adhesive interface formed by the first adhesive layer 110 and the second adhesive layer 118 and a portion of the second material layer 126. Figure 13 The image shows four parts 120. Each part of part 120 has a similar geometry (shape, size) to that described in the first embodiment above.

[0074] Then portion 120 is attached to support layer 104 such that for each portion of portion 120, a portion of layer 126 of second material is disposed between support layer 104 and a portion of temporary substrate 108 (see [link]). Figure 14 In the described exemplary embodiment, this attachment is achieved between adhesive layers, corresponding, for example, to an oxide layer for achieving direct adhesion, which is previously formed on layer 126 of the second material and support layer 104. Prior to this attachment, a third adhesive layer 122 (e.g., corresponding to an amorphous material layer, such as an oxide, like SiO2) is deposited on the first portion 126 of the second material, and a fourth adhesive layer 124 (e.g., corresponding to an amorphous material layer, such as an oxide, like SiO2) is deposited on support layer 104. The location of portion 120 on support layer 104 and the density of portion 120 mounted on support layer 104 depend on the target application of substrate 100.

[0075] For example, the support layer 104 used in the second embodiment is similar to that described above with reference to the first embodiment.

[0076] Then the bond between part 120 and support layer 104 can be consolidated and annealed.

[0077] Then, portions of the temporary substrate 108 in each portion of portion 120 are removed. In the described exemplary embodiment, portions of the adhesive interfaces formed by the first adhesive layer 110 and the second adhesive layer 118 and present in each portion of portion 120 are also removed. This material removal can be performed, for example, by grinding and / or CMP and / or liquid phase or plasma chemical etching steps. The structure obtained at this stage is as follows... Figure 15 As shown.

[0078] The substrate 100 is fabricated by removing a portion of the surface layer of the first substrate 106 (i.e., the first portion 114 of the first substrate 106) that exists on a portion of the second material layer 126. The second material layer 126 can be used as a barrier layer. Figure 16 As shown, in the obtained substrate 100, a portion of the second material layer 126 exists on the support layer 104 (and on the adhesive interface formed by the third adhesive layer 122 and the fourth adhesive layer 124), forming the surface layer of the first material of the substrate 100.

[0079] Alternatively, a portion of the surface layer of the first substrate 106 may not be removed. In this case, the obtained substrate 100 corresponds to Figure 15 The structure shown includes a surface layer formed by a portion of the surface layer of the first substrate 106 and a portion of the layer 126 of the second material, i.e., including the first material and the second material.

[0080] The different alternative embodiments described above for the first embodiment can also be applied to the second embodiment.

[0081] The following is for reference. Figures 17 to 23 A third embodiment of a method for preparing a substrate 100 is described, the substrate 100 comprising a surface layer of a first material and / or a second material obtained from the first material, the surface layer being disposed on a support layer 104 of a third material.

[0082] The method according to the third embodiment is implemented by using a first substrate 106, which is similar to that described in the first and second embodiments above (see...). Figure 17 ).

[0083] Unlike the first and second embodiments described above, the first adhesive layer 110 is generated directly on the first substrate 106 before the first substrate is mounted onto the temporary substrate 108, and the second material layer 126 is generated directly on the first substrate 106, for example, by epitaxial growth on the side of the first substrate 106 intended to form the first portion 114.

[0084] For example, the second material layer 126 produced in the third embodiment is similar to that described previously with reference to the second embodiment. Similarly, the temporary substrate 108 used in the third embodiment is similar to that used in the first and second embodiments described above.

[0085] Then, a first adhesive layer 110 is formed on the second material layer 126, followed by ion implantation to form a separation interface 112 that separates the first portion 114 and the second portion 116 of the first substrate 106. The component obtained at this stage is as follows: Figure 18 As shown.

[0086] Before attaching the first substrate 106 to the temporary substrate 108, a second adhesive layer 118 (corresponding to a layer of, for example, an amorphous material, such as an oxide, like SiO2) is deposited on the temporary substrate 108.

[0087] An assembly formed by a first substrate 106, a second material layer 126, and a first adhesive layer 110 is attached to a temporary substrate 108. For example, the surface layer of the first substrate 106, i.e., the first portion 114 of the first substrate 106, is disposed between the temporary substrate 108 and the second portion 116 of the first substrate 106, and the second material layer 126 is disposed between the surface layer of the first substrate 106 and the temporary substrate 108 (see [link]). Figure 19 In the described exemplary embodiments, this attachment corresponds to a direct oxide-oxide bond between the first adhesive layer 110 and the second adhesive layer 118. Other types of attachment methods may also be used for the first and second embodiments.

[0088] Then, at the separation interface 112, the second portion 116 of the first substrate 106 is separated from the assembly comprising the first portion 114 of the first substrate 106, the layer 126 of the second material, and the temporary substrate 108. The resulting assembly is as follows: Figure 20 As shown, and in the exemplary embodiments described, it also includes an adhesive interface formed by a first adhesive layer 110 and a second adhesive layer 118.

[0089] The obtained component is then cut into several portions 120, such that each portion 120 includes at least a portion of the surface layer of the first substrate 106 (i.e., the first portion 114 of the first substrate 106) and a portion of the temporary substrate 108. In the described exemplary embodiment, each portion 120 also has a portion of the adhesive interface formed by the first adhesive layer 110 and the second adhesive layer 118 and a portion of the second material layer 126. Figure 21 The image shows four parts 120. Each part of part 120 has a similar geometry (shape, size) to that described in the first embodiment above.

[0090] The portions 120 are then attached to the support layer 104 such that for each portion 120, a portion of the second material layer 126 is disposed between the support layer 104 and a portion of the temporary substrate 108. In the described exemplary embodiment, this attachment is achieved between adhesive layers corresponding to layers of, for example, an amorphous material (e.g., an oxide) used to achieve direct adhesion, previously formed on the first portion 114 of the first substrate 106 and the support layer 104. Prior to this attachment, a third adhesive layer 122 (corresponding to, for example, an oxide layer, such as SiO2) is deposited on the first portion 114 of the first substrate 106, and a fourth adhesive layer 124 (corresponding to, for example, an oxide layer, such as SiO2) is deposited on the support layer 104. The location of the portions 120 on the support layer 104 and the density of the portions 120 mounted on the support layer 104 depend on the target application of the substrate 100. The structure obtained after this attachment is as follows: Figure 22 As shown. Other types of attachment methods can also be used for the first and second embodiments.

[0091] The support layer 104 used in the third embodiment is similar to that described above with reference to the first and second embodiments.

[0092] The bond between part 120 and the support layer 104 can be consolidated and annealed.

[0093] Then, portions of the temporary substrate 108 in each of portions 120 are removed. In the described exemplary embodiment, portions of the adhesive interfaces formed by the first adhesive layer 110 and the second adhesive layer 118 and present in each of portions 120 are also removed. This material removal can be performed, for example, by grinding and / or CMP and / or liquid phase or plasma chemical etching steps. Figure 23 As shown, in the obtained substrate 100, a portion of the second material layer 126 and a first portion 114 of the first substrate 106 exist on the support layer 104 (more specifically, on the adhesive interface formed by the third adhesive layer 122 and the fourth adhesive layer 124), forming a surface layer of the substrate 100, which includes the first material and the second material.

[0094] The different alternative embodiments described above for the first and second embodiments can also be applied to the third embodiment.

[0095] The following is for reference. Figures 24 to 31 A fourth embodiment of a method for preparing a substrate 100 is described, the substrate 100 comprising a surface layer of a first material and / or a second material obtained from the first material, the surface layer being disposed on a support layer 104 of a third material.

[0096] First, implement the previous reference. Figures 17 to 20 The steps described, these steps are as follows Figures 24 to 27 As shown. The first substrate 106, adhesive layers 110, 118, and temporary substrate 108 used in the fourth embodiment are similar to those used in other embodiments. Following these steps, the resulting assembly includes a first portion 114 of the first substrate 106 and a layer 126 of the second material, forming a surface layer disposed on the temporary substrate 108, and is attached to the temporary substrate via an adhesive interface formed by the first adhesive layer 110 and the second adhesive layer 118.

[0097] Then the first portion 114 of the first substrate 106 is removed. This removal can be achieved by using a layer 126 of the second material as a barrier layer (see [link]). Figure 28 ).

[0098] The obtained component is then cut into several portions 120, such that each portion 120 includes at least a portion of the second material layer 126 and a portion of the temporary substrate 108. In the described exemplary embodiment, each portion 120 also has a portion of the adhesive interface formed by the first adhesive layer 110 and the second adhesive layer 118. Figure 29 The image shows four sections 120. The shapes and dimensions of sections 120 are similar to or close to those described in the previous embodiments.

[0099] The portions 120 are then attached to the support layer 104 such that for each portion 120, a portion of the second material layer 126 is disposed between the support layer 104 and the portion of the temporary substrate 108. In the described exemplary embodiment, this attachment is achieved between adhesive layers, corresponding to, for example, an oxide layer for achieving direct adhesion, previously formed on the second material layer 126 and the support layer 104. Prior to this attachment, a third adhesive layer 122 (e.g., corresponding to an oxide layer such as SiO2) is deposited on the second material layer 126, and a fourth adhesive layer 124 (e.g., corresponding to an oxide layer such as SiO2) is deposited on the support layer 104. The location of the portions 120 on the support layer 104 and the density of the portions 120 mounted on the support layer 104 depend on the target application of the substrate 100. The structure obtained after this attachment is as follows: Figure 30 As shown.

[0100] The support layer 104 used in the fourth embodiment is similar to that described in the previous embodiments.

[0101] The bond between part 120 and the support layer 104 can be consolidated and annealed.

[0102] Then, portions of the temporary substrate 108 in each of portions 120 are removed. In the described exemplary embodiment, portions of the adhesive interfaces formed by the first adhesive layer 110 and the second adhesive layer 118 and present in each of portions 120 are also removed. This material removal can be performed, for example, by grinding and / or CMP and / or liquid phase or plasma chemical etching steps. Figure 31 As shown, in the obtained substrate 100, a portion of the second material layer 126 exists on the support layer 104 (more specifically, on the adhesive interface formed by the third oxide layer 122 and the fourth oxide layer 124), forming a surface layer of the substrate 100, which includes the second material.

[0103] The different alternative embodiments described above for the first, second, and third embodiments can also be applied to the fourth embodiment.

[0104] In the different embodiments described above, the support layer 104 used corresponds to a material substrate that does not include active components, such as a silicon substrate. Alternatively, the support layer 104 corresponds to a substrate comprising multiple materials, such as a semiconductor-on-insulator type substrate, such as an SOI substrate (silicon-on-insulator), and / or comprising active components or parts, such as CMOS parts.

Claims

1. A method for preparing a substrate (100), the substrate (100) comprising a surface layer of a first material and / or a second material obtained from the first material, the surface layer being disposed on a support layer (104) of a third material, the method comprising at least the following steps: - Ion implantation is performed in a first substrate (106) including the first material to form a separation interface (112) between a first portion (114) of the first substrate (106) corresponding to the surface layer and a second portion (116) of the first substrate (106); - Attach the first substrate (106) to the temporary substrate (108) such that a surface layer of the first substrate (106) is disposed between the temporary substrate (108) and the second portion (116) of the first substrate (106); - At the separation interface (112), the second portion (116) of the first substrate (106) is separated relative to the assembly, the assembly comprising at least a surface layer of the first substrate (106) and the temporary substrate (108). - The component is cut into several parts (120) such that each part (120) includes at least a portion of the surface layer of the first substrate (106) and / or a portion of a layer (126) of the second material previously formed from the surface layer of the first substrate (106), and a portion of the temporary substrate (108); - Each of the portions (120) is attached to the support layer (104) such that for each of the portions (120), a portion of the surface layer of the first substrate (106) and / or a layer (126) of the second material is disposed between the support layer (104) and a portion of the temporary substrate (108); - Remove a portion of the temporary substrate (108) of each of the portions (120), while a portion of the surface layer of the first substrate (106) and / or a layer (126) of the second material remain on the support layer (104) to form a surface layer of the first material and / or the second material.

2. The method according to claim 1, wherein the first material corresponds to at least one of the following materials: InP, GaAs, GaN, LTO, LNO, SiC, and diamond.

3. The method according to any one of the preceding claims, wherein the diameter of the first substrate (106) is equal to the diameter of the temporary substrate (108) and less than or equal to the diameter of the support layer (104).

4. The method according to any one of the preceding claims further includes, between the separation step and the cutting step, performing chemical mechanical planarization on the surface of the second portion (116) of the first substrate (106) obtained from the separation interface (112) and the surface layer of the first substrate (106).

5. The method according to any one of the preceding claims, further comprising: - Before attaching the first substrate (106) to the temporary substrate (108), a first adhesive layer (110) is formed on the surface layer of the first substrate (106). Attaching the first substrate (106) to the temporary substrate (108) includes bonding the first adhesive layer (110) against a second adhesive layer (118) formed on the temporary substrate (108), and / or - Before attaching each of the portions (120) to the support layer (104), a third adhesive layer (122) is formed on the surface layer of the first substrate (106) or the layer (126) of the second material. Attaching each of the portions (120) to the support layer (104) includes bonding the third adhesive layer (122) against a fourth adhesive layer (124) formed on the support layer (104).

6. The method according to any one of the preceding claims, further comprising, between the separation step and the cutting step, forming a layer (126) of the second material on the surface layer of the first substrate (106), wherein, The implementation involves attaching each of the portions (120) to the support layer (104) such that for each of the portions (120), a portion of the second material layer (126) is disposed between the support layer (104) and a portion of the surface layer of the first substrate (106).

7. The method according to claim 5, further comprising: After removing a portion of the temporary substrate (108) from each of the portions (120), a portion of the surface layer of the first substrate (106) retained on the support layer (104) is removed.

8. The method according to any one of claims 1 to 5, further comprising: Before attaching the first substrate (106) to the temporary substrate (108), a layer (126) of the second material is formed on the surface layer of the first substrate (106), wherein attaching the first substrate (106) to the temporary substrate (108) is performed such that the layer (126) of the second material is disposed between the surface layer of the first substrate (106) and the temporary substrate (108).

9. The method according to any one of claims 1 to 5, further comprising: Before attaching the first substrate (106) to the temporary substrate (108), a layer (126) of the second material is generated on the surface layer of the first substrate (106); and the process further includes removing the surface layer from the first substrate (106) between the separation step and the cutting step.

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