Method of adjusting uniformity for semiconductor fabrication and associated apparatus and system

Abstract

The invention relates to a method for adjusting substrate processing uniformity for semiconductor manufacturing and a related device and system. In one or more embodiments, the heating power applied to a set of one or more heat sources is adjusted by an adjustment factor. In one or more embodiments, a method of adjusting uniformity. The method includes scanning the sensor across one or more sections to obtain a plurality of readings, generating a signal profile including the plurality of readings, and analyzing the signal profile by comparing the signal profile to a range. The method includes adjusting one or more heating parameters if at least one portion of the signal profile is outside of range. The adjustment includes identifying a set of one or more heat sources associated with at least one portion of the signal profile, and adjusting the heating power by an adjustment factor.

Description

Technical Field

[0001] This disclosure relates to methods, related equipment, and systems for adjusting the uniformity of substrate processing in semiconductor manufacturing. Background Technology

[0002] Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. One method of processing a substrate involves depositing a material, such as a semiconductor material or a conductive material, on the upper surface of the substrate. For example, epitaxy is a deposition process in which a film of various materials is deposited on the surface of a substrate in a processing chamber. During processing, various parameters can affect the uniformity of the material deposited on the substrate. For example, temperature nonuniformity and / or bulk nonuniformity can affect deposition uniformity. As an example, the temperature of the substrate and / or the temperature of the processing chamber components can affect deposition uniformity. As another example, stress and / or warpage of the substrate can lead to temperature nonuniformity and / or deposition nonuniformity.

[0003] Non-uniformity may be difficult to account for, and non-uniformity may lead to processing delays, substrate waste, and reduced throughput.

[0004] Therefore, there is a need for an improved method, device, and system for adjusting uniformity. Summary of the Invention

[0005] This disclosure relates to methods, related apparatus, and systems for adjusting the uniformity of substrate processing in semiconductor manufacturing. In one or more embodiments, the heating power applied to one or more heat sources is adjusted by an adjustment factor.

[0006] In one or more embodiments, a method for adjusting substrate processing uniformity suitable for semiconductor manufacturing includes heating the internal volume of a processing chamber using a target value. The method includes scanning a sensor across one or more segments to obtain multiple readings. The method includes generating a signal profile comprising the multiple readings and analyzing the signal profile by comparing it to a range. The method includes adjusting one or more heating parameters if at least a portion of the signal profile is outside the range. The adjustment includes identifying a set of one or more heat sources associated with at least a portion of the signal profile and adjusting the heating power using an adjustment factor for the set of one or more heat sources.

[0007] In one or more embodiments, a non-transitory computer-readable medium suitable for semiconductor manufacturing includes instructions that, when executed, cause a plurality of operations. The plurality of operations include analyzing a signal profile by comparing it to a range. The range is less than a threshold ratio of a target value. The threshold ratio is 0.10. The analysis includes identifying a signal difference in the signal profile and determining whether the signal difference is within or outside the range. The plurality of operations includes adjusting one or more heating parameters if at least a portion of the signal profile is outside the range. The adjustment includes identifying a set of one or more heat sources associated with at least a portion of the signal profile and adjusting the heating power by an adjustment factor for the set of one or more heat sources.

[0008] In one or more embodiments, a system for processing a substrate and suitable for semiconductor manufacturing includes: a chamber body including one or more sidewalls, and a window. The one or more sidewalls and the window at least partially define an internal volume. The system includes one or more heat sources configured to heat the internal volume, a substrate support disposed in the internal volume, and sensors configured to read parameters in the internal volume. The system includes a controller including instructions that, when executed, cause a plurality of operations. The plurality of operations include generating a signal profile comprising a plurality of readings. The plurality of operations include analyzing the signal profile by comparing it to a range. The range is less than a threshold ratio of a target value. The threshold ratio is 0.10. The analysis includes identifying a signal difference in the signal profile and determining whether the signal difference is within or outside the range. The plurality of operations includes adjusting one or more heating parameters if at least a portion of the signal profile is outside the range. The adjustment includes identifying a set of one or more heat sources associated with at least a portion of the signal profile and adjusting the heating power by an adjustment factor of the set of one or more heat sources. Attached Figure Description

[0009] To gain a more detailed understanding of the features described above in this disclosure, a more specific description of the disclosure briefly outlined above can be obtained by referring to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate exemplary embodiments only and should not be considered as limiting their scope, and other equally effective embodiments are appreciated.

[0010] Figure 1 This is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0011] Figure 2 It is a cross according to one or more embodiments Figure 1 A schematic side view of the uniformity profile 200 of the substrate and / or substrate support shown.

[0012] Figure 3 This is a schematic block diagram view of a method for adjusting the uniformity of substrate processing in semiconductor manufacturing, according to one or more embodiments.

[0013] Figure 4 According to one or more embodiments Figure 3 A schematic flowchart view of an exemplary implementation of the method shown.

[0014] Figure 5 According to one or more embodiments Figure 1 A schematic top view of the upper heat source shown.

[0015] Figure 6 According to one or more embodiments Figure 5 A schematic side view of the upper heat source shown.

[0016] Figure 7 It is based on one or more embodiments in Figure 3 A schematic top view of the processing chamber during the operation of the method shown.

[0017] Figure 8 This is based on the use of one or more embodiments. Figure 7 A schematic diagram of an exemplary signal profile generated by the illustrated implementation.

[0018] Figure 9 It is based on one or more embodiments in Figure 3 A schematic top view of the processing chamber during the operation of the method shown.

[0019] Figure 10 This is based on the use of one or more embodiments. Figure 9 A schematic diagram of an exemplary signal profile generated by the illustrated implementation.

[0020] For ease of understanding, the same device symbols have been used where possible to denote the same elements common to all figures. It is contemplated that elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0021] This disclosure relates to methods, related apparatus, and systems for adjusting the uniformity of substrate processing in semiconductor manufacturing. In one or more embodiments, the heating power applied to one or more heat sources is adjusted by an adjustment factor.

[0022] This disclosure contemplates that terms such as “couples,” “coupling,” “couple,” and “coupled” may include, but are not limited to, welding, fusion, melting together, interference fit, and / or fastening, such as by using bolts, threaded fasteners, pins, and / or screws. This disclosure also contemplates that terms such as “couples,” “coupling,” “couple,” and “coupled” may include, but are not limited to, integral formation. Furthermore, this disclosure contemplates that terms such as “couples,” “coupling,” “couple,” and “coupled” may include, but are not limited to, direct coupling and / or indirect coupling, such as indirect coupling via components (such as links, blocks, and / or frames).

[0023] Figure 1 This is a schematic side cross-sectional view of a processing chamber 100 according to one or more embodiments. The processing chamber 100 is a deposition chamber. In one or more embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is used to grow an epitaxial film on a substrate 102. The processing chamber 100 generates crossflow of precursors across the top surface 150 of the substrate 102. The processing chamber 100 in... Figure 1 The text is shown as being under processing conditions.

[0024] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form the chamber body. Within the chamber body are disposed a substrate support 106, an upper window 108 (such as an upper dome), a lower window 110 (such as a lower dome), a plurality of upper heat sources 141, and a plurality of lower heat sources 143. In one or more embodiments, the upper heat source 141 includes an upper lamp, and the lower heat source 143 includes a lower lamp. This disclosure contemplates other heat sources that can be used (in addition to or as alternatives to lamps) among the various heat sources described herein. For example, resistive heaters, light-emitting diodes (LEDs), and / or lasers can be used among the various heat sources described herein.

[0025] A substrate support 106 is disposed between the upper window 108 and the lower window 110. The substrate support 106 supports the substrate 102. In one or more embodiments, the substrate support 106 includes a base. This disclosure contemplates other substrate supports (including, for example, a substrate carrier and / or one or more annular segments supporting one or more external regions of the substrate 102). A plurality of upper heat sources 141 are disposed between the upper window and the cover 154. The plurality of upper heat sources 141 form part of an upper heat source module 155.

[0026] Multiple lower heat sources 143 are disposed between the lower window 110 and the base plate 152. The multiple lower heat sources 143 form part of the lower heat source module 145. The upper window 108 is an upper dome and / or formed of an energy-transmitting material such as quartz. The lower window 110 is a lower dome and / or formed of an energy-transmitting material such as quartz.

[0027] An upper volume 136 and a purification volume 138 are formed between an upper window 108 and a lower window 110. The upper volume 136 and the purification volume 138 are portions of an internal volume defined at least partially by the upper window 108, the lower window 110, and one or more liners 111, 163. In one or more embodiments, the upper volume 136 is a processing volume.

[0028] The internal volume has a substrate support 106 disposed therein. The substrate support 106 includes a top surface on which a substrate 102 is disposed. The substrate support 106 is attached to a shaft 118. In one or more embodiments, the substrate support 106 is connected to the shaft 118 via one or more arms 119 connected to the shaft 118. The shaft 118 is connected to a motion device 121. The motion device 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment of the shaft 118 and / or movement and / or adjustment of the substrate support 106 within the upper volume 136.

[0029] The substrate support 106 may include lifting rod holes 107 disposed therein. Each lifting rod hole 107 is sized to accommodate a lifting rod 132 for raising the substrate 102 from the substrate support 106 before or after a deposition process. When the substrate support 106 is lowered from a processing position to a transfer position, the lifting rod 132 may rest on a lifting rod stop 134. The lifting rod stop 134 may include a plurality of arms 139 attached to a shaft 135.

[0030] The flow module 112 includes one or more gas inlets 114 (e.g., multiple gas inlets), one or more purge gas inlets 164 (e.g., multiple purge gas inlets), and one or more gas outlets 116. The one or more gas inlets 114 and the one or more purge gas inlets 164 are disposed on the side of the flow module 112 opposite to the one or more gas outlets 116. A preheating ring 117 is disposed below the one or more gas inlets 114 and the one or more gas outlets 116. The preheating ring 117 is disposed above the one or more purge gas inlets 164. One or more liners 111, 163 are disposed on the inner surface of the flow module 112 and protect the flow module 112 from reactive gases used during deposition and / or cleaning operations. The gas inlets 114 and the purge gas inlets 164 are each positioned such that a corresponding one or more process gases P1 and one or more purge gases P2 flow parallel to the top surface 150 of the substrate 102 disposed within the upper volume 136. The gas inlets 114 are fluidly connected to one or more process gas sources 151 and one or more cleaning gas sources 153. A purge gas inlet 164 is fluidly connected to one or more purge gas sources 162. One or more gas outlets 116 are fluidly connected to an exhaust pump 157. One or more process gases P1 supplied using one or more process gas sources 151 may include one or more reactive gases (such as one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (such as one or more of nitrogen (N2) and / or hydrogen (H2)). One or more purge gases P2 supplied using one or more purge gas sources 162 may include one or more inert gases (such as one or more of argon (Ar), helium (He), and / or nitrogen (N2)). One or more clean gases supplied using one or more clean gas sources 153 may include one or more of hydrogen (H) and / or chlorine (Cl). In one or more embodiments, one or more process gases P1 include silicon phosphide (SiP) and / or phosphine (PH3), and one or more clean gases include hydrochloric acid (HCl).

[0031] One or more gas exhaust outlets 116 are further connected to or include an exhaust system 178. The exhaust system 178 is fluidly connected to one or more gas exhaust outlets 116 and an exhaust pump 157. The exhaust system 178 may facilitate controlled deposition of layers on the substrate 102. The exhaust system 178 is located on the opposite side of the processing chamber 100 relative to the flow module 112.

[0032] Processing chamber 100 includes one or more liners 111, 163 (e.g., lower liner 111 and upper liner 163). Flow module 112 (which may be at least a portion of a sidewall of processing chamber 100) includes one or more gas inlets 114 in fluid communication with an upper volume 136. The one or more gas inlets 114 are in fluid communication with one or more flow gaps between the upper liner 163 and the lower liner 111. One or more second gas inlets 175 are in fluid communication with one or more inlet openings 183 of the upper liner 163.

[0033] During a deposition operation (e.g., an epitaxial growth operation), one or more process gases P1 flow through one or more gas inlets 114, through one or more gaps, and into the upper volume 136 to flow over the substrate 102.

[0034] This disclosure also envisions that one or more purge gases P2 may be supplied to and discharged from the purge volume 138 (via one or more purge gas inlets 164) during deposition operations. One or more purge gases P2 flow simultaneously with one or more process gases P1. One or more process gases P1 are discharged through a gap between the upper liner 163 and the lower liner 111 and through one or more gas discharge outlets 116. One or more purge gases P2 may be discharged through one or more outlet openings and through one or more gas discharge outlets 116 identical to those of one or more process gases P1. This disclosure also envisions that one or more purge gases P2 may be discharged separately through one or more second gas discharge outlets separate from the one or more gas discharge outlets 116.

[0035] During the cleaning operation, one or more cleaning gases flow through one or more gas inlets 114, through one or more gaps (between the upper liner 163 and the lower liner 111) and into the upper volume 136.

[0036] The processing system includes one or more sensors 195, 196, 197, 198 (e.g., temperature sensors) configured to measure parameters (e.g., temperature) within the processing chamber 100. In one or more embodiments, the one or more sensors 195, 196, 197, 198 include a central sensor 196 and one or more external sensors 195, 197, 198. A controller 190 (described below) can control one or more sensors 195, 196, 197, 198 and one or more heat sources 141, 143, and can use at least one of the one or more sensors 195, 196, 197, 198 and one or more heat sources 141, 143 to perform methods for adjusting the uniformity of the substrate processing. In one or more embodiments, each of the one or more sensors 195, 196, 197, 198 includes a pyrometer, such as a pyrometer including a silicon sensor. In one or more embodiments, each sensor 195, 196, 197, 198 is an optical sensor, such as an optical pyrometer. This disclosure envisions the use of sensors other than pyrometers and / or one or more of sensors 195, 196, 197, 198 to measure properties other than temperature.

[0037] In one or more embodiments, one or more sensors 195, 196, 197, 198 include one or more upper sensors 196, 197, 198 disposed above the substrate 102 and adjacent to the cover 15, and one or more lower sensors 195 disposed below the substrate 102 and adjacent to the base plate 152. This disclosure contemplates that at least one of the one or more lower sensors 195 can be vertically aligned below at least one of the upper sensors 196, 197 (such as external sensor 197).

[0038] Each sensor 195, 196, 197, 198 may be a single-wavelength sensor device or a multi-wavelength (such as a dual-wavelength) sensor device. In one or more embodiments, a system including process chamber 100 includes any one, any two, or any three of the four illustrated sensors 195, 196, 197, 198. In one or more embodiments, process chamber 100 includes one or more additional sensors besides sensors 195, 196, 197, 198. In one or more embodiments, process chamber 100 may include sensors disposed at locations different from and / or with different orientations than the illustrated sensors 195, 196, 197, 198.

[0039] As shown, controller 190 communicates with processing chamber 100 and is used to control the operation of processes and methods, such as those described herein.

[0040] The controller 190 is configured to receive data or inputs as sensor readings from sensors (such as one or more of sensors 195, 196, 197, 198). For example, the sensors may include: sensors monitoring layer growth on substrate 102; and / or sensors monitoring the temperature of substrate 102, substrate support 106, and / or liners 111, 163. The controller 190 is equipped with or communicates with a system model of the processing chamber 100. The system model includes a heating model, a temperature uniformity model, a film uniformity model, a film deposition rate model, a coating model, a rotational position model, and / or a gas flow model. The system model is a program configured to estimate parameters within the processing chamber 100 (such as signal profiles of substrate 102 and / or substrate support 106, e.g., temperature profiles, gas flow rates, gas pressures, component rotational positions, heating profiles, coating conditions, and / or cleaning conditions) throughout the deposition and / or cleaning operations. The controller 190 is further configured to store readings and perform calculations. The readings and calculations include previous sensor readings, such as any previous sensor readings within the processing chamber 100. The readings and calculations further include stored calculated values ​​after the sensor readings are measured by the controller 190 and run through the system model. Therefore, the controller 190 is configured to retrieve and save the stored readings and calculations for future use. Maintaining previous readings and calculations allows the controller 190 to adjust the system model over time to reflect a more accurate version of the processing chamber 100.

[0041] The controller 190 can monitor heating, generate signal profiles (e.g., temperature profiles), identify one or more heat sources in the group, adjust the heating profile, adjust the heating power, estimate optimization parameters, adjust one or more sensors, generate alarms on a display, pause deposition operations, initiate chamber downtime cycles, delay subsequent iterations of deposition operations, initiate cleaning operations, pause cleaning operations, and / or otherwise adjust the process formulation.

[0042] Controller 190 includes a central processing unit (CPU) 193 (e.g., a processor), an instruction-containing memory 191, and support circuitry 192 for the CPU 193. Controller 190 controls various items directly or via other computers and / or controllers. In one or more embodiments, controller 190 is communicatively coupled to a dedicated controller, and controller 190 acts as a central controller.

[0043] Controller 190 is any form of general-purpose computer processor used in industrial settings to control various substrate processing chambers and devices, and subprocessors thereon or therein. Memory 191 or non-transitory computer-readable medium is one or more readily available memories, such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM) and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.)), read-only memory (ROM), floppy disk, hard disk, USB flash drive, or any other form of digital memory (local or remote). Support circuitry 192 of controller 190 is coupled to CPU 193 for supporting CPU 193. Support circuitry 192 includes cache, power supply, clock circuitry, input / output circuitry systems and subsystems, etc. Operating parameters (e.g., target values, readings, signal difference, signal profile, heating power (e.g., applied to one or more of heat sources 141, 143), adjustment factors, threshold ratios, ranges and / or training ranges compared to the signal difference, cleaning formulas and / or treatment formulas) and operations are stored in memory 191 as software routines, which are executed or invoked to transform controller 190 into a dedicated controller to control the operation of the various chambers / modules described herein. Controller 190 is configured to perform any of the operations described herein. When executed, the instructions stored in memory cause method 300 to be performed with respect to processing chamber 100. Figure 4 , Figure 7 and / or Figure 9 One or more of the operations. The controller 190 and the processing chamber 100 are at least one part of a system for processing the substrate.

[0044] The various operations described in this article (such as method 300, ...) Figure 4 , Figure 7 and / or Figure 9 The operation can be performed automatically by the controller 190, or it can be performed automatically and / or manually by certain operations performed by the user.

[0045] In one or more embodiments, controller 190 includes a large-capacity storage device, an input control unit, and a display unit. Controller 190 can monitor the temperature of substrate 102, the temperature of substrate support 106, process gas flow rate, and / or purge gas flow rate. In one or more embodiments, controller 190 includes multiple controllers 190 such that stored readings and calculations, as well as system models, are stored in a controller separate from the controller 190 controlling the operation of the processing chamber 100. In one or more embodiments, all system models, as well as stored readings and calculations, are stored within controller 190.

[0046] The controller 190 is configured to control the flow rate of gases depositing, cleaning, rotating, heating, and passing through the processing chamber 100 by providing outputs to controls for sensors 195, 196, 197, 198, upper heat source 141, lower heat source 143, process gas source 151, purified gas source 162, moving device 121, and / or exhaust pump 157.

[0047] Controller 190 is configured to adjust the outputs of these controls based on sensor readings, system model, and stored readings and calculations. Controller 190 includes embedded software and compensation algorithms for calibrating measurements. Controller 190 may include one or more machine learning and / or artificial intelligence algorithms for estimating optimized parameters for uniformity analysis operations, deposition operations, and / or cleaning operations.

[0048] One or more machine learning and / or artificial intelligence algorithms may implement, adjust, and / or refine one or more algorithms, inputs, outputs, or variables described above. Additionally or alternatively, one or more machine learning and / or artificial intelligence algorithms may prioritize or prioritize certain aspects of adjustments to process chamber 100 and / or methods (such as method 300) relative to other aspects of process chamber 100 and / or methods (such as method 300). One or more machine learning and / or artificial intelligence algorithms may take into account other changes within the processing system, such as hardware replacement and / or degradation. In one or more embodiments, one or more machine learning and / or artificial intelligence algorithms take into account upstream or downstream changes that may occur in the processing system due to changes in variables attributable to process chamber 100 and / or methods (such as method 300). For example, if variable "A" is adjusted to cause a change in aspect "B" of the process, and this adjustment unintentionally causes a change in aspect "C" of the process, one or more machine learning and / or artificial intelligence algorithms may take into account this change in aspect "C". In this embodiment, one or more machine learning algorithms and / or artificial intelligence algorithms embody predictive aspects related to the implementation of process chamber 100 and / or methods (such as method 300). These predictive aspects can be used to mitigate unintended changes within the processing system in advance.

[0049] One or more machine learning and / or artificial intelligence algorithms may be used, for example, regression models (such as linear regression models) or clustering techniques to estimate optimization parameters. The algorithms may be unsupervised or supervised. One or more machine learning and / or artificial intelligence algorithms may optimize, for example, optimized parameters such as target values, readings, signal differences, signal profiles, heating power (e.g., applied to one or more of heat sources 141, 143), adjustment factors, threshold ratios, ranges and / or training ranges compared to the signal difference, cleaning formulations, and / or treatment formulations.

[0050] In one or more embodiments, controller 190 performs the operations described herein automatically without using one or more machine learning algorithms and / or artificial intelligence algorithms. In one or more embodiments, controller 190 compares measured values ​​(such as readings and / or signal differences) with data in lookup tables and / or libraries to identify a group of one or more heat sources and / or adjust the heating power of that group of one or more heat sources. Controller 190 may store the measured values ​​as data in lookup tables and / or libraries.

[0051] Figure 2 It is a cross according to one or more embodiments Figure 1 A schematic side view of the uniformity profile 200 of the substrate 102 and / or substrate support 106 shown. As shown, the uniformity profile 200 may include one or more process non-uniformities across a direction parallel to the diameter of the substrate 102 and / or the diameter of the substrate support 106.

[0052] Process nonuniformity can indicate, for example, nonuniformity of the substrate (such as substrate 102) and / or substrate support (such as substrate support 106). Process nonuniformity can be nonuniformity of temperature or materials (such as component thickness of the substrate and / or substrate support, coating thickness of the substrate support (e.g., silicon carbide coated on graphite or reactive material from process gases), machining defects of the substrate support, and / or surface roughness of the substrate support). This nonuniformity may be caused by insufficient and / or uneven cleaning. Process nonuniformity can be nonuniformity of the substrate shape caused by warping (e.g., bending). Warping can be caused, for example, by uneven heating and / or properties of the substrate. This disclosure envisions that process nonuniformity can indicate other nonuniformities. Nonuniformity can be caused, for example, by component placement (such as nonuniformity of the distance between the lifting rod 132 and substrate 102 and / or poor alignment of substrate 102 relative to the center of substrate support 106). Non-uniformity can be caused, for example, by component corrosion (such as corrosion of the substrate support 106, such as corrosion of the coating on the substrate support 106) and / or component reaction (such as reaction of process gases with the substrate support 106). Non-uniformity can also be caused, for example, by process drift (such as heat source drift).

[0053] Figure 3 This is a schematic block diagram view of a method 300 for adjusting substrate processing uniformity in semiconductor manufacturing, according to one or more embodiments.

[0054] Operation 302 of method 300 includes heating the internal volume of the processing chamber using a target value. The target value may be preset, for example, by a user and / or by the controller 190. In one or more embodiments, the target value described herein is a target temperature. In one or more embodiments, the target temperature is in the range of 400 degrees Celsius to 550 degrees Celsius. In one or more embodiments, the target temperature is in the range of 700 degrees Celsius to 800 degrees Celsius.

[0055] Operation 304 includes a rotating substrate support.

[0056] Operation 306 includes scanning a sensor across one or more segments to acquire multiple readings. In one or more embodiments, the sensor is a temperature sensor and the multiple readings are multiple temperature readings. In one or more embodiments, the one or more segments are disposed along a substrate support or along a substrate positioned on a substrate support. The one or more segments extend along an azimuth angle and are disposed at one or more radial locations. In one or more embodiments, the multiple readings are acquired at a sampling frequency as the substrate support rotates at a rotational speed. The rotational speed is a ratio of the sampling frequency. In one or more embodiments, the ratio is less than 0.1. In one or more embodiments, the ratio of the rotational speed is 0.015 or less. In one or more embodiments, the ratio of the rotational speed is 0.010 or less, such as in the range of 0.0025 to 0.0075. The sampling frequency is in the range of 1 Hz to 10 kHz. In one or more embodiments, the sampling frequency is in the range of 90 Hz to 110 Hz, such as about 100 Hz. In one or more embodiments, the rotational speed is in the range of 0.50 cycles per second (e.g., rotations) to 0.55 cycles per second, such as about 32 cycles per minute. Readings are acquired at a read rate of at least 100 data points per revolution of the substrate support. In one or more embodiments, the read rate is at least 200 data points per revolution, such as at least 400 data points per revolution, or even 600 or more data points per revolution. Other values ​​are envisioned for the rotation speed, sampling frequency, ratio, and / or read rate.

[0057] The scanning of operation 306 can be performed while rotating the substrate support.

[0058] Operation 308 includes generating a signal profile comprising multiple readings. In one or more embodiments, the signal profile is a temperature profile.

[0059] Operation 310 includes analyzing the signal profile by comparing it to a range. The analysis includes identifying signal differences within the signal profile and determining whether the signal difference is within or outside the range. In one or more embodiments, the signal difference is a temperature difference.

[0060] The identification of signal difference includes (at optional operation 311) determining the standard deviation of the signal profile, and the signal difference is the standard deviation.

[0061] The identification of signal difference includes (at optional operation 312) identifying one or more peaks and one or more valleys of the signal profile. In one or more embodiments, the signal difference is the difference between one of the one or more peaks and an adjacent valley of the one or more valleys. An adjacent valley may be within one revolution of one of the one or more peaks. In one or more embodiments, the signal difference is the difference between the highest peak of the one or more peaks and the lowest valley of the one or more valleys.

[0062] Operation 313 includes adjusting one or more heating parameters when at least a portion of the signal profile is outside the range.

[0063] Operation 313 includes (at operation 315) identifying one or more heat sources associated with at least one portion of the signal profile.

[0064] In one or more embodiments, the group of one or more heat sources is part of a plurality of heat sources powered during the heating of operation 302. In one or more embodiments, the group of one or more heat sources is a heat source other than the plurality of heat sources powered during the heating of operation 302. In one or more embodiments, the group of one or more heat sources is associated with at least one of one or more valleys of the signal profile. In one or more embodiments, the group of one or more heat sources is associated with at least one of one or more peaks of the signal profile.

[0065] Operation 313 includes (at operation 317) adjusting the heating power via an adjustment factor for the group of one or more heat sources. The heating power before adjustment may be zero or non-zero. In one or more embodiments, the adjustment factor is a ratio equal to a threshold ratio equal to the target value plus a value of 1.0. The heating power can be increased (e.g., multiplied) or decreased (e.g., divided) by the adjustment factor. The threshold ratio may be preset, such as one selected by the user, and / or determined by the controller 190. In one or more embodiments, the threshold ratio is in the range of 0.005 to 0.10, such as in the range of 0.005 to 0.01.

[0066] The adjustment factor can be preset without using a threshold ratio (such as by user selection and / or determined by controller 190). In one or more embodiments, the adjustment factor is in the range of 1.005 to 1.10, such as in the range of 1.005 to 1.01.

[0067] In one or more embodiments, the sensor's field of view moves during the scan of operation 306, such that one or more segments extend radially and the extent is less than a threshold ratio. The threshold ratio is 0.10. In one or more embodiments, the threshold ratio is 0.081, such as 0.051.

[0068] In one or more embodiments, the sensor's field of view is substantially stationary during the scanning of operation 306, such that one or more segments extend arcuately (e.g., along the azimuth, such as along a circle) and the extent is less than a threshold ratio. The threshold ratio is 0.025. In one or more embodiments, the threshold ratio is 0.01, such as 0.0081 or 0.0051.

[0069] The relevance of operation 315 includes identifying a group of one or more heat sources that heat (e.g., pointing—such as vertically aligned above or below) an area covering the field of view when at least a portion of the signal profile is outside its range. This determination may be based on the rotational position of the substrate support 106, which may be based on the time when at least a portion of the signal profile is outside its range (within the signal profile). In one or more embodiments, the relevance of operation 315 includes identifying a group of one or more heat sources that heat (e.g., pointing—such as vertically aligned above or below) an area covering the field of view when corresponding to one or more valleys of the signal profile.

[0070] In one or more embodiments, the relevance of operation 315 includes identifying the group of one or more heat sources that heat (e.g., pointing—such as vertically aligned above or below) the area covering the field of view during one or more valleys and / or one or more peaks (within the signal).

[0071] This disclosure envisions that the heating power of one or more heat sources in the group can be adjusted in a pulsed or non-pulsed manner. For example, an adjustment factor can be applied to the heating power in a pulsed manner, causing the heating power to oscillate between a first power value (which does not include the adjustment factor) and a second power value (which includes the adjustment factor). The first power value can be zero or a non-zero number. In one or more embodiments, the heating power is adjusted using a pulse frequency approximately equal to the rotational speed of the substrate support.

[0072] One or more operations of method 300 may be performed automatically and / or one or more operations of method 300 may be performed manually. For example, operations 302 to 310 and operation 313 may be performed automatically. As another example, operations 302 to 310 may be performed automatically, and method 300 may generate an alarm for the user to manually perform operation 313. Method 300 may include, for example, initiating chamber downtime, replacing substrate supports, adjusting process formulations (such as target values, e.g., target temperature) and / or heating power, and / or marking the substrate for reprocessing (such as redeposition).

[0073] Information from method 300 (such as target values, readings, signal differences, signal profiles, heating power, adjustment factors, threshold ratios, and / or ranges) can be stored and tracked as data. In one or more embodiments, the data is analyzed and / or compared using averaging, derivatives, modeling, imaging, and / or other data analysis techniques. As an example, one or more optical sensors can capture images, and the intensity of the images can be analyzed to detect readings (e.g., temperature readings).

[0074] This disclosure envisions the generation of a first signal profile of a substrate support (e.g., using a lower sensor) and the generation of a second signal profile of the substrate (e.g., using an upper sensor). The first and second signal profiles can be compared with each other. For example, when a substrate is placed on a substrate support, a first signal profile of the substrate support (e.g., a first temperature profile) is generated, and a second signal profile of the substrate (e.g., a second temperature profile) is generated. When a region corresponding to the substrate appears, an increase in the first signal profile of the substrate support (e.g., an increase in temperature) and a decrease in the second signal profile of the substrate (e.g., a decrease in temperature) can indicate that the substrate warps (e.g., bends) when placed on the substrate support, and these regions are areas where the substrate is spaced apart from the substrate support. Similarly, when a region corresponding to the substrate appears, a decrease in the first signal profile of the substrate support (e.g., a decrease in temperature) and an increase in the second signal profile of the substrate (e.g., an increase in temperature) can indicate that the substrate warps (e.g., bends) when placed on the substrate support, and one or more regions are areas where the substrate contacts the substrate support. Using the method described herein, one or more heat sources (such as the upper heat source 141 of the group) are associated with the area of ​​the substrate spaced apart from the substrate support, and the heating power of the associated group is adjusted to reduce warping (e.g., bending).

[0075] This disclosure envisions that training models for the systems and / or methods described herein may involve the generated film thickness readings and associated film thickness profiles. Film thickness readings may be acquired during and / or after processing. The film thickness profile may be analyzed using a temperature profile instead of the temperature profile described above, or the film thickness profile may be merged with the temperature profile described above, such that the merged (e.g., averaged) data is data located at the same position along the substrate. This disclosure envisions that training models for the systems and / or methods described herein may be at least partially unsupervised. For example, the training model may take into account film thickness profiles measured on the substrate after processing the substrate.

[0076] This disclosure envisions that the readings described herein can be analyzed in a unitless manner before being correlated with measurements having certain units. For example, the reading acquired at operation 306 may be a unitless value and / or may be used to generate a signal profile (at operation 308) and the signal profile may be analyzed (at operation 310) before the reading is correlated with a temperature measurement having, for example, units of Celsius or Fahrenheit (using the emissivity of the substrate and / or substrate support). For example, the reading may be a measured intensity.

[0077] This disclosure envisions that the methods described herein (such as method 300) can be performed during and / or before and / or after the deposition operation. For example, method 300 can be performed during a simulated process in the absence of substrate 102 in chamber 100.

[0078] Figure 4 According to one or more embodiments Figure 3 A schematic flowchart view of an exemplary implementation of method 300 shown.

[0079] Operation 402 includes generating an initial signal profile (e.g., an initial temperature profile) using one or more sensors (e.g., a temperature sensor), and graph 403 illustrates a portion of the signal profile 404 (e.g., a temperature profile) using readings (e.g., temperature readings) of data collected during the generation of the initial signal profile relative to time. Time may be the time taken for one or more sensors to scan across one or more segments. Performing operation 402 may include, for example, performing operations 302, 304, 306, and 308 of method 300.

[0080] Operation 408 includes generating, one or more additional times, operations 306 and 308 of method 300 to produce additional signal profiles 405 to 407 (e.g., temperature profiles) across multiple iterations shown in Figure 409. A portion of signal profiles 405 to 407 is shown in Figure 409. For example, a more complete illustration of signal profiles 405 to 407 may include a sinusoidal pattern. Iterations may be, for example, multiple heating powers, multiple adjustment factors, multiple target values ​​(e.g., target temperatures), multiple radial locations of one or more segments, multiple deposition operations (which may be performed across multiple substrates), multiple substrate supports (which may be used for multiple deposition operations), and / or multiple components (such as substrate 102 and substrate support 106) for one or more segments.

[0081] Each signal profile 404 to 407 corresponds to one of multiple iterations. If the iteration is for a target temperature or heating power, the target temperature can be achieved by applying multiple different bias power levels to heat sources 141, 143. Signal profiles 404 to 407 and / or associated readings (e.g., temperature readings) can be stored (e.g., in a library in memory). Signal profiles 404 to 407 can be generated at different times (e.g., on different dates) and can include process drift (e.g., sensor, heater drift, and / or substrate drift (e.g., from etching)).

[0082] Operation 410 includes merging signal profiles 404 to 407 (which may be stored in a library in memory) to produce a merged profile 411 as shown in Figure 412 (a portion of the merged profile 411 is shown in Figure 412). The merged profile 411 can be analyzed at operation 310 and can be used to determine whether one or more heating parameters need to be adjusted. Merging may include averaging (which may be linearly fitted) along signal profiles 404 to 407, and averaging may include weighted averaging.

[0083] Operation 414 uses adjustment field 415 to integrate and contour 411, as shown in Figure 416. Adjustment field 415 can be calculated and applied using a model, such as a model incorporating one or more machine learning and / or artificial intelligence algorithms. The model can use other measurements, such as film thickness measurements performed on the treated substrate and / or the substrate being treated, to determine film uniformity and / or film deposition rate.

[0084] Figure 5 According to one or more embodiments Figure 1 A schematic top view of the upper heat source 141 shown.

[0085] The upper heat source 141 can be grouped into one or more groups 141a to 141d (in Figure 5Four exemplary groups of four heat sources per group are shown. Each group 141a to 141d is configured to heat a corresponding area of ​​the substrate 102. As described above, one or more of groups 141a to 141d are associated with at least one portion of a signal profile outside the range, and the heating power of one or more of the associated groups 141a to 141d is adjusted. The lower heat source 143 can be arranged, associated, and / or adjusted in a similar manner.

[0086] Figure 6 According to one or more embodiments Figure 5 A schematic side view of the upper heat source 141 shown.

[0087] Each group 141a to 141d of the heat source receives heating power from the corresponding power supply 601, 602, 603 of the multiple power supplies controlled by the controller 190.

[0088] Figure 7 It is based on one or more embodiments in Figure 3 A schematic top view of the processing chamber 100 during operations 302, 304 and 306 of method 300 shown.

[0089] The rotating substrate support 106 scans the field of view 702 of the sensor 197 across the substrate 102 and / or one or more segments 704 of the substrate support 106. The field of view 702 is substantially stationary during scanning, allowing the one or more segments 704 to extend in an arcuate manner (e.g., along an azimuth, such as along a circumference). For example, the substrate support 106 can perform one or more complete rotations, allowing the one or more segments 704 to form a complete loop.

[0090] Figure 8 This is based on the use of one or more embodiments. Figure 7 A schematic diagram of an exemplary signal profile 801 generated by the illustrated embodiment.

[0091] The signal profile 801 (e.g., a temperature profile) includes one or more peaks 811 to 815 and one or more valleys 821 to 825. As discussed above, analyzing the signal profile 801 may include identifying the highest peak 811 and the lowest valley 822. In one or more embodiments, the highest peak 811 indicates the maximum warpage (e.g., bending) of the substrate and / or the lowest valley 822 indicates the contact point between the substrate and the substrate support. In one or more embodiments, the highest peak 811 may indicate the contact point between the substrate and the substrate support and / or the lowest valley 822 may indicate the maximum warpage (e.g., bending) of the substrate.

[0092] As an example, Figure 5One or more of the groups 141a to 141d shown are associated with valleys 821 to 825, and the heating power of one or more of the groups 141a to 141d associated with valleys 821 to 825 is adjusted.

[0093] Analyzing the signal profile 801 may include acquiring the standard deviation of the signal profile 801 (e.g., by acquiring the standard deviation under the signal profile 801). Arrow 805 indicates a complete rotation of the substrate support 106.

[0094] Figure 9 It is based on one or more embodiments in Figure 3 A schematic top view of the processing chamber 100 during operations 302, 304 and 306 of method 300 shown.

[0095] The substrate support 106 is rotated such that the field of view 902 of the sensor 197 is scanned across the substrate 102 and / or one or more segments 904 of the substrate support 106. The field of view 902 moves during scanning (e.g., linearly, such as radially relative to the center of the substrate support 106 along direction D1), such that one or more segments 904 extend radially (e.g., in addition to along the azimuth). In one or more embodiments, the field of view 902 is scanned at least partially between the center of the substrate support 106 and the outer radius 909. For example, the substrate support 106 may perform one or more complete rotations, such that one or more segments 904 may form a lobe shape (e.g., ...). Figure 9 As shown). In one or more embodiments, the field of view 902 pivots the sensor 197 by multiple angular increments A1 (as shown). Figure 1 (As shown) to move. Sensor 197 can pivot between the collected data points by an angle increment A1. In one or more embodiments, the angle increment A1 between the data points is less than 5 degrees, such as about 1.8 degrees. In one or more embodiments, pivoting results in a pitch between the collected data points. The pitch is less than 25 mm, such as about 10 mm.

[0096] Figure 10 This is based on the use of one or more embodiments. Figure 9 The illustrated embodiment produces a schematic diagram of an exemplary signal profile 1001. In one or more embodiments, the signal profile 1001 is a temperature profile.

[0097] The signal profile 1001 includes one or more peaks 1011 to 1013 and one or more valleys 1021 to 1024.

[0098] Arrow 1005 indicates a complete rotation of the substrate support relative to signal profile 1001.

[0099] Signal profile 1001 includes signal difference DF1 (e.g., temperature difference). This disclosure contemplates that signal difference DF1 may be outside this range.

[0100] As an exemplary implementation Figure 5 The upper heat source group 141c shown may be associated with and / or the first segment 1031 of the signal profile 1001. Figure 5 The upper heat source group 141d shown can be associated with the second segment 1032 of the signal profile 1001.

[0101] The benefits of this disclosure include accurate adjustment of heating and / or deposition uniformity; real-time adjustment of heating and / or deposition uniformity; reduction, mitigation, or elimination of the use of certain corrective measures (such as preheating); reduction of inefficiency; accurate and efficient consideration of process drift (such as aging and wear of chamber components); accurate and efficient consideration of substrate warpage (e.g., bending); adjustability of parameters (such as temperature, deposition uniformity, and / or deposition rate (e.g., in nm per minute)) under various operating conditions (such as low rotational speeds, high pressures, and / or low flow rates); a wider and / or more modular range of adjustability; and increased deposition uniformity and / or deposition rate. The benefits of this disclosure also include reduced substrate waste.

[0102] Further benefits of this disclosure include increased component life; reduced chamber downtime; reduced processing delays; and increased throughput. Benefits of this disclosure also include enhanced deposition repeatability and / or cleaning repeatability.

[0103] It is conceivable that one or more aspects disclosed herein can be combined. As an example, processing chamber 100, controller 190, one or more sensors 195, 196, 197, 198, and method 300 can be combined. Figure 4 The exemplary embodiments shown include heat sources groups 141a to 141d and power supplies 601 to 603. Figure 7 The exemplary implementation shown, signal profile 801, Figure 9 The exemplary embodiments and / or signal profile 1001 shown represent one or more aspects, features, components, operations, and / or properties. For example, regarding... Figure 4 , Figure 7 and / or Figure 9 The described operations and / or parameters may be combined with the operations and / or parameters of method 300. Furthermore, it is envisioned that one or more aspects disclosed herein may include some or all of the benefits mentioned above.

[0104] Although the foregoing description pertains to embodiments of this disclosure, other and further embodiments of this disclosure may be devised without departing from the basic scope of this disclosure, the scope of which is defined by the following claims.

Claims

1. A method for adjusting the uniformity of substrate processing in semiconductor manufacturing, the method comprising: The target value is used to heat the internal volume of the treatment chamber; Scan the sensor across one or more sections to obtain multiple readings; Generate a signal profile that includes the plurality of readings; The signal profile is analyzed by comparing it to a range; as well as If at least a portion of the signal profile is outside the range, then one or more heating parameters are adjusted, the adjustment including: Identify a group or more heat sources associated with at least one portion of the signal profile; as well as The heating power is adjusted by the adjustment factor of one or more heat sources.

2. The method of claim 1, wherein the analysis comprises: Identify the signal difference in the signal profile; as well as Determine whether the signal difference is within or outside the range.

3. The method of claim 2, wherein the identification of the signal difference comprises: Identify one or more peaks and one or more valleys in the signal profile, and the set of one or more heat sources is associated with at least one of the one or more valleys.

4. The method of claim 2, wherein the adjustment factor is equal to the ratio of the threshold ratio of the target signal to the value of 1.

0.

5. The method of claim 4, wherein the field of view of the sensor is substantially stationary during the scan, such that the one or more segments extend along the azimuth angle, the range being less than the threshold ratio, and the threshold ratio being 0.

025.

6. The method of claim 4, wherein the field of view of the sensor moves during the scan such that the one or more segments extend radially, and the range is less than the threshold ratio, and the threshold ratio is 0.

10.

7. The method of claim 2, wherein the identification of the signal difference comprises: Determine the standard deviation of the signal profile.

8. The method of claim 1, further comprising: A rotating substrate support, wherein the scanning is performed while the substrate support is rotating.

9. The method of claim 8, wherein: The one or more segments are positioned along the substrate support or along a substrate positioned on the substrate support; and The target value is the target temperature, the sensor is a temperature sensor, the multiple readings are multiple temperature readings, and the signal profile is a temperature profile.

10. A non-transitory computer-readable medium suitable for semiconductor manufacturing, the non-transitory computer-readable medium comprising instructions that, when executed, cause a plurality of operations to be performed, the plurality of operations including: The signal profile is analyzed by comparing it to a range, where the range is less than a threshold ratio of a target value, the threshold ratio being 0.10, and the analysis includes: Identify the signal difference in the signal profile, and Determine whether the signal difference is within or outside the range; and If at least a portion of the signal profile is outside the range, then one or more heating parameters are adjusted, the adjustment including: Identify a group or more heat sources associated with at least one portion of the signal profile, and The heating power is adjusted by the adjustment factor of one or more heat sources.

11. The non-transitory computer-readable medium of claim 10, wherein the plurality of operations further comprises: The signal profile is generated prior to the analysis of the signal profile, and the signal profile includes multiple readings.

12. The non-transitory computer-readable medium of claim 10, wherein the identification of the signal difference comprises: Identify one or more peaks and one or more valleys in the signal profile, and the set of one or more heat sources is associated with at least one of the one or more valleys.

13. The non-transitory computer-readable medium of claim 12, wherein the signal difference is the difference between one of the one or more peaks and an adjacent valley of the one or more valleys.

14. The non-transitory computer-readable medium of claim 13, wherein the adjacent valley is within one revolution of one of the one or more peaks.

15. The non-transitory computer-readable medium of claim 12, wherein the signal difference is the difference between the highest peak of the one or more peaks and the lowest valley of the one or more valleys.

16. The non-transitory computer-readable medium of claim 10, wherein the threshold ratio is 0.

025.

17. The non-transitory computer-readable medium of claim 10, wherein the identification of the signal difference comprises: Determine the standard deviation of the signal profile.

18. The non-transitory computer-readable medium of claim 10, wherein the adjustment factor is a ratio equal to the threshold ratio of the target value plus the value of 1.

0.

19. A system for processing a substrate and suitable for semiconductor manufacturing, the system comprising: The main body of the chamber includes one or more sidewalls; A window, wherein the one or more sidewalls and the window at least partially define an internal volume; One or more heat sources are configured to heat the internal volume; A substrate support is disposed within the internal volume; The sensor is configured to read parameters from the internal volume; as well as The controller includes instructions that, when executed, cause a plurality of operations to be performed, the plurality of operations including: A signal profile is generated, which includes multiple readings. The signal profile is analyzed by comparing it to a range that is less than a target value by a threshold ratio of 0.10, and the analysis includes: Identify the signal difference in the signal profile, and Determine whether the signal difference is within or outside the range, and If at least a portion of the signal profile is outside the range, then one or more heating parameters are adjusted, the adjustment including: Identify a group or more heat sources associated with at least one portion of the signal profile, and The heating power is adjusted by the adjustment factor of one or more heat sources.

20. The system of claim 19, wherein the identification of the signal difference comprises: Determine the standard deviation of the signal profile.

Images